TW200534050A - Mask for use in a microlithographic projection exposure system - Google Patents

Abstract

The invention relates to a mask for use in a microlithographic projection exposure system (10), comprising a support (40), to which a pattern of opaque structures (44) is applied. To reduce the dependence of the transmission capability on the polarisation, the structures (44) contain a material with a refractive index, whose imaginary part is greater than 1.8 and preferably greater than 2.2. Silicon, for example, can constitute a material of this type. Alternatively, or in addition, a dielectric material (54) can be provided in a gap (48) between two structures (442), whereby said material does not come into contact with the structures (44). The dependence of the absorption capability on the polarisation is also reduced by the dielectric coating (60) of the structures (44).

Description

200534050 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a photomask used in a mikrolithographisch exposure device, such as in the manufacture of highly integrated integrated circuits or other microchips. Used by structured components. The present invention is particularly concerned with a so-called "Amplitudenmask" having a carrier, to which a pattern consisting of a light-tight structure is applied.

[Prior art] In the general manufacturing method of integrated circuits and other micro-structured components, several structures are applied to an appropriate substrate (such as a silicon wafer). To construct these layers, they are first covered with a photosensitive lacquer (Photolack), which is sensitive to light in a specific wavelength range (such as light in the low-frequency ultraviolet range (DUV)), and then The thus-coated wafer is irradiated (exposed) in a projection exposure apparatus. 'Here, a pattern composed of a refractive structure (which is contained in a mask) is used with a projection objective (Prójekti〇ns_〇). bjektiv) onto the photosensitive paint. Because the imaging ratio is generally less than 1, this projection objective is also called a small objective lens (Reduktionsobjektiv). After the photosensitive paint is developed (Entwickeln, English), the circle is used as an etching process, wherein the uppermost layer corresponds to the pattern on the photomask. This process is repeated until all layers are applied to the wafer. When the micro # print projection exposure device is developed, one of its main purposes is to produce a structure with a smaller and smaller size on the wafer in the month and month b. In this way, the integration density of the components to be manufactured is increased. At present, by using substantially different measures, the size of the structure that can be produced on the wafer is smaller than the wavelength of the projection light used. One of these measures is to place an immersion liquid () in the intermediate space between the projection objective and the wafer. This allows projection lenses with special digital apertures (even greater than 1.0) to be used. However, the small structure width that can be achieved by immersion on the wafer also makes the structure on the photomask increasingly smaller. Although the equivalent effect can be achieved by reducing the imaging ratio of the projection objective lens. However, such in-depth technical improvements in the design of the projection objective make this alternative solution not to be considered due to cost reasons. If the structural width of the pattern contained in the mask is the size of the wavelength of the projection used or even Far less than its wavelength, some adverse effects will occur especially in the case of the wave-amplitude reticle, and the optical imaging will be adversely affected by the projection objective. In the mask called "amplitude mask", unlike the "phase mask", the phase of the transmitted light is not affected, but its amplitude is affected. Therefore, the structure contained in an amplitude mask is generally opaque, and is generally composed of a structured chromium layer. One of the adverse effects that occur in an amplitude mask (the size of the intermediate space between the structures of such an amplitude mask is in the range of the wavelength of the projection light) is that the mask has a polarizing effect on the transmitted projection light. Therefore, there is an effect in the foreground (Vordergrund, English: f0regrund) that some projection light (its polarization direction is aligned parallel to the longitudinal extension direction of the structure) passes through the photomask more than others. Projection light (its polarization direction is perpendicular to the longitudinal extension direction of the structure). The relationship between this penetrability and polarization is that on the photomask 6 200534050, structures of the same kind but different orientations are imaged on the photosensitive paint (photosensitive paint) with different light intensities. Since the exposure threshold of the photosensitive paint is very clear, there is some change in the incident light energy per unit area, which directly affects the width of the structure produced on the wafer by the light surname method. Generally, such a structure is not desired. The width is affected by the orientation of the structure contained in the mask. However, the reason for the polarization in the small intermediate space between the structures can also be that when the polarization direction of the projected light is parallel to the longitudinal extension of the structure, the velocity system and polarization of the light traveling between the structures The projected light whose direction is perpendicular to the structure has a different propagation speed. This will cause a phase difference 'between the mutually orthogonal polarization components, as in the case of a phase delay that occurs in a delay plate (Verziigeruiigsplattchen). However, in a reticle, such a phase difference is generally undesirable because the width of the structure on the wafer can be influenced by the directivity of the structure contained in the reticle. The reason is that certain optical elements in the projection objective, such as a spectroscopic layer that is selective for polarization, itself has a penetrating or reflecting ability related to polarization. Therefore, for example, the conversion effect from linearly polarized light to elliptically polarized light. It has an effect on the light intensity in the photomask and on the width of the structure on the wafer. In order to prevent the light transmission ability from being affected by polarization, it is mentioned in US patent US 6,522,483 B2: a quarter-wavelength small plate located in front of the photomask is used to convert the originally linearly polarized light into a circle In this way, the intensity of the projected light behind the mask is not affected by the directionality of the opaque structure in the mask. Another four-blade wavelength plate is used behind the mask. Can again cause linear polarization. The difficulty of practicing the white D method is that after the projection light passes through the mask, because the transmission energy is related to the polarization, it is not a very accurate circular polarization. , Each depends on the directionality of the structure, but there is another delay plate behind the mask, which can only change the ellipsoidal D / polarization of a certain eccentricity into a linear polarization, but it cannot change the various eccentricities. The rate of elliptical polarization becomes linear. Such as A, in the subsequent optical elements, two. At first, the commonly used shirt sound will also make the structure k width on the wafer change according to the directionality of the structure contained in the mask. In the case of a phase mask, although the small intermediate space between the structures has a much smaller polarization effect, the subtractive mask is more complicated and more expensive to manufacture than an amplitude mask. SUMMARY OF THE INVENTION Therefore, an object of the present invention is to improve an amplitude mask so that the width of a structure on a wafer is less affected by the directivity of the structure included in the mask. This purpose is achieved according to the present invention: it is not the case in the prior art: the projection light affects its polarization before and after passing through the mask, but directly polarizes the mask, and in particular It is the decrease in the relationship between transmission capacity and polarization. According to an important point of the present invention, this can be achieved by using a photomask having a carrier, and having a pattern composed of an opaque structure applied on the carrier. The method for achieving this is to make the structure contain a For materials, the imaginary part of the refractive index (Imaglnarteil) is greater than 1.8 and preferably greater than 2.2 for a wavelength range of 100 nm to nanometers. 200534050 According to this first feature, the present invention is based on the recognition that when the projection light is polarized perpendicular to the longitudinal extension direction of the structure in the photomask, its intermediate space in the structure is absorbed to a greater degree. Because it can penetrate deeper into the structure. Conversely, when the projected light passes through the intermediate space between the structures, it is continuously absorbed in the edge regions of the structures. Therefore, the effect of polarization becomes larger as the structure height increases. However, if the structure contains a material, the imaginary part of the refractive index at the wavelength observed here is more special than that commonly used (in the case of chromium 'for a wavelength of 1934 meters', the imaginary part of its refractive index is 1.65 ) A tH T it (Spurbar > ^: traceable) ^ degree, when the light is polarized perpendicular to the longitudinal extension of the structure, the degree of absorption in the structure is greater ', so it will not go deep in this way In the construct. Although in the case of this material, more electrons are absorbed on the structure surface than in the case of chromium, for example, the overall depth of the 肊 里 邠 # 乂 少 'species that is carried away by these electrons varies with the structure. As the imaginary part of the refractive index increases, it becomes smaller. This makes this refractive component have a larger transmission capacity than chromium. In the transition zone into which the material (its refractive index has a larger imaginary number part), there is almost no light polarized parallel to the longitudinal extension of the structure. The known method suffers from the so-called "wire_gnd_efffekt" (like the 60 shape of a traditional wire-polarized piano), which weakens its strength due to electromagnetic edge conditions. People demand that transmittance should not be affected by chemical, which means that for vertical 9

200534050 Light polarized in the longitudinal direction of the structure has the same transmission ability as light polarized in parallel to the longitudinal direction of the structure. When constructed with chrome, the transmission capability for a straight polarization component is lower than the transmission capability for a parallel polarization component. However, if chromium is not used, no material can be found to make the structure. The transmission capacity for gold polarized tillers is much greater than the parallel polarization component. "The best formula" is to find a material that has the imaginary part of this refractive index, in which the transmission of the vertical polarization component is as close as possible to its transmission capacity for the parallel polarization component. For example, σ, this value of this optimal material can be obtained by simulation calculation (Smulationstrechnung) or experimentally. Another feature that can be considered when selecting materials is relative phase delay. This phase delay is caused by the two different polarization components when passing through the photomask: generally cannot be found-an ideal material. On the one hand, its transmission ability can not cross-polarize, and on the other hand, the phase delay is close to zero. Therefore, it is generally necessary to find a compromise. The polarization effect (in other words, the transmission capacity is affected by polarization, and the relative phase delay) is the smallest. The weighting of these two roles depends on the individual case, depending on the magnitude of the influence of the optical components contained in the talents on polarization. The material used for the structure is a combination of different metals (such as aluminum) and semiconductors, but it is particularly suitable for silicon, and the imaginary part of the refractive index is 2.78 at a wavelength of 193 meters, so # 士 处 丄, w is not larger than chrome. In addition, in the prior art, the fabrication of micro-structured seconds has been studied and tested, so the cost of developing a suitable programming technique is small. Tian 10 200534050 Basically, if the structure consists of the above materials only in the area along its longitudinal flanks, m is sufficient. Due to many considerations, the penetration depth of ultraviolet rays is only in the range of a few nanometers to about 10 ″ meters, so the side surface of the structure need only be covered with the thickness of the above-mentioned materials with a few thick sublayers. However, 'if this always very fine structure consists entirely of materials with the above properties, it is particularly simple in terms of manufacturing technology.

According to another feature of the present invention, the effect of a mask that is more neutral to polarization (less affected by polarization) can be achieved in the following ways; there is a dielectric material in an intermediate space between two structures, which No contact with this: structure. In this way, light mainly propagates in the dielectric material (for example, the dielectric material may be the gap left between the dielectric material and the opaque structure by quartz glass (for example, t may be filled with air or A protective gas), the field strength is small. Therefore, the depth of light penetration is correspondingly small, and the light absorbed by the material that forms the opaque structure is correspondingly small. Here, the width of the gap is The polarization property has a significant impact 'by simulation or-optimization = sequence' can be known: in the case of a predetermined pattern composed of opaque materials', exactly what is the transmission capacity of the gap width Receptivity and response are minimal. ^ / The relative of the dielectric material in the space between T to the polarization component (its polarization direction is parallel and extending perpendicular to the longitudinal extension of the structure): the phase delay effect is also very Beneficial effects. Here, & can be used to find "design parameters" by researching or designing, which can minimize the overall polarization effect. In other words, the transmission capacity is affected by polarization and the relative phase delay. For most / J, 〇11 200534050 in The material in the intermediate space between the structures should preferably constitute a core structure that extends substantially parallel to the longitudinal direction of the opaque structure. Here, the cross-section of this core structure is, for example, at least approximately rectangular According to the third feature of the present invention, the mask can be made less affected by polarization in the following manner: at least one layer is constructed with a layer made of a dielectric material. Such a dielectric layer, for example, can be made of quartz A single φ layer is formed or a layer composed of several thin individual layers is provided with a cover, such as a conventional anti-reflection layer. This dielectric layer causes a change in the electromagnetic field distribution in the near-field (Nahfeld), and can be tailored to the desired The polarization-neutral nature is also optimized for transmission capability and phase delay. Obviously, the above measures can also be combined with each other. Therefore, for example, an opaque structure made of silicon can be surrounded by a core structure [a thin layer of quartz glass is generated when Nachoxidation is used on this structure], and the core structure is also composed of quartz glass . By combining these measures, the transmission capacity can be affected by polarization as little as in the case of a phase mask. Other features and advantages of the present invention are described below in conjunction with an embodiment of the drawings. [Embodiment] FIG. 1 shows a side view of a projection exposure apparatus according to the prior art photoetching. This figure is simplified and not in the correct ratio. The apparatus is represented by (10) as a whole. The projection exposure apparatus (10) An illumination device (11) is used for generating projection light (12). For this purpose, the illumination device (1 丨) contains a light 12 200534050 The projection generated by the light source (13) is 193 nm And the source (1 3), for example, may be a laser device. The wavelength of light (12), in the embodiment shown here, is therefore in the low-frequency ultraviolet spectral range. The optical element, represented by (14), is changed in various ways. For example, the distribution of its angle is emitted by the laser device.

In addition, the radiating device (11) includes several projection light from the light source (13), such as changing the shape of the beam, or mixing, or changing the light source (13) in the illustrated embodiment. The first projection light was linearly polarized. In addition, the irradiating device ⑽ includes a projection objective lens (16), and an object plane (18) is provided with a photomask (20) so as to be movable. In the image plane (22) of the projection objective ⑽, there is a photosensitive layer composed of a photosensitive paint (24). The photosensitive lacquer (24) is applied directly on the carrier (26) or indirectly via a structured layer, and the carrier (26) is designed in the form of a silicon wafer. Since projection exposure equipment is already known in the prior art, its further details will not be described in detail. Figure 2 shows the reticle (20) in a highly schematic illustration. For example, it contains-a simple graph t consisting of horizontal and vertical patterns (28) or (30). The rectangles represent an intermediate space between the surrounding structures. For the sake of brevity, it is assumed here that these horizontal and vertical structures (28) or (30) are only different in directionality, but their widths or intervals are not different. Structures (28) and (30) are made of chromium, so the projection light (12) cannot pass through. As shown by the arrow (32), the projection light (12) polarized parallel to the horizontal structures (28) can penetrate the intermediate space between the horizontal structures (28) unhindered. However, for the projected light penetrating through the intermediate space between the vertically extending structures (30) 13 200534050 line (12) has limited transmission ability. The intermediate space between these vertical structures (30) is smaller than the intermediate space between horizontal structures (28) for the projected light (12) polarized perpendicular to its longitudinal direction. . Figure 2 on the right shows a pattern consisting of horizontal and vertical structures (28,) (30,), which is projected onto the photosensitive paint (24) by a projection objective (16). For the sake of brevity, the imaging ratio is selected as 1 ·· 丨, so the pattern produced on the photosensitive paint (24) is roughly equivalent to the pattern on the photomask (20). It can be seen in the implementation φ example shown in FIG. 2 that the vertical structure (30) on the mask (20) is not imaged on the image plane with the same structural width as the intermediate space between the horizontally extending structures (28). (22) [Photosensitive paint (24) extends on the image plane]. The reason is that the intermediate space between the vertically extending structures (30) penetrates the projection light (12) less than the intermediate space between the horizontally extending structures (28). Therefore, the intensity of the projection light (12) on the photosensitive paint (24) is different, and its intensity depends on the direction of the projection structure (28) (30) is parallel to the polarization direction (32) of the projection light (12). ). Because the exposure threshold of the photosensitive paint (24) is very narrow, the difference in light intensity makes the width of the structure (28,) (30,) different. In the view shown in Fig. 3, it is assumed that the mask (20) is passed by the circularly polarized projection light (12 '). Since the polarized components of the cast light (1 2) polarized vertically and parallel to the opaque structure (28) (30) have different transmission capabilities, the projection light (12 ') passes through the photomask ( After 20), it is subjected to different elliptical polarizations. The elliptical (34) (36) described by this elliptical polarization is perpendicular to each other. If the elliptical polarization is to be transformed into a linear polarization by a "delay plate" (38) at this time, this can only be achieved for a well-defined circular polarization effect. Therefore, the polarization of the projection light (12,) varies. Depending on whether it passes through the intermediate space between horizontal or vertical structures (28) or (30). If the projection objective (16) contains polarization-dependent optical elements, such as a polarization-selective beam splitter or birefringent element, the effect of this polarization will generally also result in the resulting structure (28 () (3〇,) has; the same width. The present invention proposes a countermeasure to this, using a photomask that has a polarization effect of smaller φ as a whole, and in particular, the transmission capacity is less affected by the polarization. Fig. 4 shows a perspective view of a photomask (20a) according to the first embodiment of the present invention, thereby reducing the influence of polarization on the transmission capability. The photomask (2〇 ^ has a carrier (40) 'whose material is transparent to the projection light (ua) with a wavelength of 193 nm. At this wavelength, the material used for the carrier (40) can be considered as an example of quartz glass A pattern is formed on the surface (42) of the carrier (4G) facing away from the irradiation device (11). The pattern is an opaque structure (44), which is only illustrated here. In the embodiment shown in the figure, the opaque structure (44) includes a large-area structure (441) with a thick seam and a finer frame-like structure (442). The cross section is generally rectangular. These structures (44 ) The process of an etching procedure defined by a light-printing method is produced by a layer (46) composed of a conductive material, and the imaginary part of its refractive index is strongly 1.8. In the illustrated embodiment, This material is silicon and its imaginary part of the refractive index is approximately 2.78 at a wavelength of 193 nm. There is an intermediate space (48) between the opaque structure (44), which uses a surrounding gas (for example Air or special protective gas) filled example shown in 15 200534050 'The interval p of the frame strip structure (442) is 400 nm, and the height d of the layer (46) is 100 nm. Since the imaginary part m of the refractive index of the structure (44) is large, it is perpendicular to the frame The stripe structures (442) are vertically polarized and projected light (12a) passing through the intermediate space (48) only penetrates into the depth of the structure (44) by a few atomic layers. Therefore, in these intermediate spaces (48) The electric field of is only weakly weakened by these structures. The polarized light polarized in the longitudinal direction parallel to the frame structure (442) is weakened by the so-called "wire grid effect". Thus, the AND structure (442) The longitudinally parallel and vertically polarized projection light (12a) has approximately the same degree of attenuation, so the transmission capacity of the mask (20a) and the polarization direction of the projected light passing through it have little effect. In Fig. 4, it is assumed that the projection light (i2a) hitting the mask (20a) is a non-polarized person. Therefore, the projection light (12a) passes through the mask (20a) at all In all directions perpendicular to a propagation direction of the projection light (1 2a), the polarization direction changes in a statistical manner. , As shown in Figure 4 by the polarization distribution g. The projected light (12a ,,) diffracted by the structure (44), although absorbed by the structure (44), has a small overall intensity, However, the polarization of the projection light (i2a) remains unaffected. The use of the mask (20a) causes a phase delay between the mutually orthogonal polarization directions. In the case of unpolarized light, the polarization The state will have no effect. Therefore, the projected light (12a,) diffracted by the structure (44) is still unpolarized, as shown by the polarization distribution (50,) used in the figure. A second embodiment of the second embodiment is similar to the figure * view of a mask (20b). The same components as those of the first embodiment shown in Fig. 4 are designated by the same reference numerals. 16 200534050 The photomask (20b) is different from the photomask (20a) shown in Fig. 4 in that the-and layer (46) do not have to be composed of this material (the refractive index of this material is particularly large) Imaginary part). This layer (46) can also be made of chromium, for example. However, it is important that in the case of the photomask (20b), a core structure (54) is applied to the carrier (40) in the intermediate space (48) between the frame-strip structure 042), and the carrier (40) 40) Constructed from a dielectric material (such as quartz glass). The core structure (54) likewise has at least a nearly rectangular cross-section and extends parallel to the opaque structure but does not contact the structure. In this way, a narrow gap (56) is left between the core structure (54) and the opaque structure (44), the width a of which is 5 nm in the embodiment shown. The "casting scene" light (126) [which penetrates the intermediate space (48) between the opaque structures (44)] is roughly guided in the core structure (54). In contrast, in the gap (56), the electric field intensity of the projection light (12b) is small. In this way, only a small part of the projection light (12b) and especially its polarization component extending perpendicular to the longitudinal direction of the structure (442) can be absorbed in the vertical edge region of the structure (44). Therefore, the transmittance of the mask (20b) is also affected by the polarization direction of the incident projected light in a small range in this embodiment. In addition, the mask will produce only a small phase shift between two mutually polarized components. Figure 5 shows the distributions (50b) and (50b,) of the polarization of the projected light (12b) before and after passing through the mask (20b). This assumes a circular polarization of polarized light (12b). The projection light (12b,) passing through the mask (20b) is still circularly polarized or slightly elliptical in all cases. For the polarization components that are perpendicular to each other, the larger the difference in transmittance and effective refractive index 17 200534050, the greater the ellipse eccentricity of the polarization state caused. The photomask of the third embodiment of the present invention is shown in Fig. 6 (a perspective view similar to Figs. 4 and 5). The same components as those of the first embodiment shown in Fig. 4 are given the same reference numerals. Photomask (20c) "The photomask (operation) shown in Figure 4 differs in that ... the structure is clear, and the coating is made of a dielectric material (such as quartz glass). In the case of a non-mask (20a), the structure (44) is illustrated by • 冓 Libei j and g 'this kind of coating ⑽) can be generated by the structure (the surface of 4 sentences is subjected to subsequent oxidation. The coating (60) (in the illustrated embodiment, 'its thickness h is 90 nanometers) can also be made into a multilayer system, such as a type of anti-reflection layer. As it turns out, by coating a coating (6 〇) Applied to the structure (44), the transmittance can be reduced by the influence of polarization. This is shown in Figure 6 and the projection light (12c) (12c ') is used to pass through the photomask (20c). Before or after polarization distribution

(50 ° C) (5Ge,). Here, the projection light (12e) is similar to that in Fig. 4 and is unpolarized. Due to the coating (6G), this polarization state remains unchanged even after passing through the mask (20C). The combination of the above-mentioned measures of palladium in any combination, or the combination of all three embodiments, can further reduce the influence of the transmission capacity by polarization. Therefore, in 2 cases and 3, the opaque structure made of Shi Xi (44) [in the post-oxidation process #, there is-thin quartz glass layer _ generated on it] 彳 surrounds the core structure also made of quartz glass ( 54). Obviously, when the nanometer is shorter, the above embodiment can be changed in various ways, for example, at a wavelength of 157 nanometers. When the wavelength ratio is 1 9 3, the material of the carrier (40), 18 200534050 core structure (54) and layer (60) should be fluorite (Fluj3spat) (CaF2), because the light absorption of this wavelength is too low. Strong. In addition, the structure (44) and the core structure (54) may not be directly carried by the carrier (40), but indirectly by one or several intermediate layers applied on the carrier. [Brief description of the figure] FIG. 1 is a highly simplified side view of a low-light etching projection exposure apparatus according to the prior art.

FIG. 2 is a highly schematic perspective view of a photomask irradiated with linearly polarized light and a structure so produced on a wafer according to the prior art, and FIG. 3 is a circularly polarized light according to the prior art. The exposed photomask, and a quarter-wave plate and a highly schematic perspective view of the structure thus produced on the wafer. FIG. 4 is a photomask made of silicon according to the first feature of the present invention. Figure 3 is an enlarged perspective view (this figure is not to scale), Figure 5 is a view similar to Figure 4 in a photomask with a dielectric core structure according to the second feature of the present invention, and Figure 6 is according to the third feature of the present invention A view of a photomask similar to that of Figure 4 has a construction with a dielectric coating. [Symbol description of main components] (10) Projection exposure equipment (11) Irradiation device (12) (12 ') (12 ") (12a) (l2b) Projection light (13) Light source 19 200534050 (14) Optical element (16) Projection objective (18) Object plane (20a) (20b) (20c) Mask (22) Image plane (24) Photosensitive paint (26) Carrier (28) (289) Horizontal structure (30) (305) Vertical structure (32 ) Arrow (34) Oval (36) Rounded (38) Delay plate (40) Carrier (42) Surface (44) Not only (441) Large area structure with thick chains (442) Fine frame-like structure ( 46) Layer (48) Intermediate space (50b) (50b,) (50c) (50c,) Distribution of polarization (54) Core structure (56) (60) Overlay gap 20

Claims (1)

200534050 10. Scope of patent application: 1 · A photomask used in the device of the Weixingyin Seal < w / 一 | Uncle's Shirt Exposure Equipment (ίο), the photomask has a carrier (28) and one By; ^ 读 也 #Photo. They are applied to the carrier by a pattern consisting of a structure that is not yet returned (44), which is characterized by: The structure (44) contains a material whose imaginary part of the refractive index is 1〇 The wavelength between 〇 nanometer and 200 nanometers is greater than i 8 and preferably greater than η 2. For example, the photomask of the first scope of the patent application, wherein: the material is silicon. 3. The mask as described in the first item of the patent application, wherein the structure (44) is composed entirely of the one material. 4. A photomask for use in a micro-etching projection exposure apparatus (10), the photomask having a carrier (40) 'and a pattern composed of an opaque structure (44) applied to the carrier (4) 〇), characterized by: In the intermediate space (48) between the two structures (441) (442) there is a dielectric material (54), the dielectric material and the two structures (441) (442) not in contact. 5. The mask according to item 4 of the scope of patent application, wherein the material constitutes a core structure (54) which extends substantially parallel to the longitudinal direction of the opaque structure (442). 6. The photomask according to item 5 of the scope of patent application, wherein the cross-section of the core structure (54) is at least approximately rectangular. 7 · As for the photomask in item 5 of the scope of patent application, in which the material is quartz glass. 8 · A photomask for use in a light engraved projection exposure device (10), which has a carrier (40) and a pattern application consisting of an opaque structure (44) 21 200534050 to 4 carriers ( 40), characterized in that at least one construction (44) has a layer (60) made of a dielectric material. Said y. If the mask of the eighth item of the patent application, wherein: the layer (60) is composed of oxidized silicon. 10. The photomask according to item 8 of the scope of patent application, wherein: the layer (60) contains several individual layers. 丄 丄 · A micro-etching projection device for manufacturing micro-structured components, having an irradiating device (11) to generate projection light (12) having a preset wavelength, and one being passed by the projection light (12) Photomask (2〇 ^ (2sen) (2 to), and there is a-projection objective (16), the pattern of the photomask (20a) (20b) (2 () is imaged to a photosensitive layer (24) It is characterized by: The reticle (20a) (20b) (20c) is the reticle of the scope of application for the item i, 4 or 8 of the patent application scope. • If the projection exposure equipment of the scope of the application for the patent application item 1 丨： &Quot; The wavelength of the projection light (12) that can be generated by the irradiation device (1 1) is less than 200 nanometers, and the projection objective lens has a large numerical aperture of ⑤0 · 9 (deleted che Apertur) 〇w. The method for manufacturing a microstructured component in the light iron stamping method includes the following steps: a) preparing a projection objective (16), and setting an object plane (18) in the projection objective (16) as in the scope of the patent application Photomask (2Ga) (Bird) (20c) for item 1, 4 or 8; 22 200534050 (〇 Project the pattern applied on the photomask (20 &) (2〇 ^ 〇 (20 (:) onto On the photosensitive exhibition (24), the photosensitive layer (24) is arranged in an image plane (22) of the projection objective lens (16). 1 4 · A micro-structured component which utilizes item 13 of the scope of patent application Method maker XI. Schematic: See the next page. twenty three