TW200528927A - Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems - Google Patents

Abstract

A radial transverse electric polarizer includes a first layer of material having a first refractive index, a second layer of material having a second refractive index, and a plurality of elongated elements azimuthally and periodically spaced apart, and disposed between the first layer and the second layer. The plurality of elongated elements interact with electromagnetic waves of radiation to transmit transverse electric polarization of electromagnetic waves of radiation. The polarizer device may be used, for example, in a lithographic projection apparatus to increase imaging resolution. A device manufacturing method includes polarizing a beam of radiation in a transverse electric polarization.

Description

200528927 (1) Description of the invention: [Technical field to which the invention belongs] The present invention relates generally to optical polarizers. More _ A Wen special 疋 & is a polarizer about 鬲 numerical aperture lithography. [Prior art] In this type of example, the -patterned element generates a -circuit pattern 'that corresponds to the only layer of the Air Force Army, and this pattern can be imaged on a substrate (Shi Xi) that has been coated with a layer of radioactive material (photoresist). Wafer) (for example, including one or more dies). In general, a single-wafer or substrate will contain the entire network of adjacent target portions that are successively emitted one at a time via the projection system. , = The term "fluoridation element used" should be interpreted broadly to correspond to the pattern produced by the material part, which can be given to-enter the radiation beam = = pieces. ... The term "light room" can also be used. Generally On the other hand, there is a layer of specific functions in, for example, integrated circuits or components produced by the Efen. One example of such a patterned element is a light :: well-known, and it contains, for example, two Bits, alternating phases, and various types of masks. The masks in this type of mask will be shaken as L Xia 7, and penetrate penetratingly (the penetrating light hits the mask Radiation-selective magic or reflection (in a reflective mask). The supportable structure in the mask is basically a mask table, which is held in the period of the human radiation beam, and the radiation beam comes from. '. If necessary, it can be relative to 91784.doc 200528927 Another figure stupid- ^ 〃 ”70 examples are a programmable mirror array. A type of array :: Examples are-with-layer shrink control and-reflective surface The basic principle of the addressable moment car surface m device is, for example, the fixability of the reflective surface = reflected incident light becomes a Light, and the unaddressed area reflects the incident light to become undiffracted φ. Π Use—Appropriate filters 'can filter the undiffracted light moment beam' leaving only the diffracted light. In this way, according to the addressable matrix The surface patterns the light beam. In addition, the programmable mirror array embodiment uses a very small mirror matrix to coordinate == the small mirror can be adjusted by ㈣—appropriate local electric field or using piezoelectricity: the blade is tilted near the main axis. Again, the mirrors are an address matrix of 1 so that the addressing mirror will "reflect-enter the human radiation beam in a direction different from the addressing mirror." In this method, the reflection beam is based on the addressing map of the addressable matrix.荦 来 圏 _ ,, Α — Camellia patterning. You can use appropriate electronic components to order the matrix addressing. In the above two cases, the patterning component can include or more programmable mirror array. Here Called mirrors 5,29M91,5 ^; 3; pct announcements wo 98/38597 and wo9_96.-Programmable mirror array, the support structure can be embodied as, for example, a frame that can be fixed or movable as needed or The table. Another- An example of a documented component is a programmable LCD array. An example of such a rod structure is given in US Patent No. 5,229,872. As mentioned above, the support structure in this example can be embodied into a frame that is fixed and moved as needed, for example. Or table. # For the sake of simplification, the next part of this article will be 91784.doc 200528927 in some specific locations. In the 4th part, we will involve _ > k ^ —…. Examples of masks and mask tables. However, such examples中 所 — 丄-Would like to be seen in the larger context of the patterned elements described above. The current device orders for patterning with a photomask on the table for fine masking can make a difference between different types of machines. Each dry material part of a certain type of lithographic projection device is shamed by exposing the entire mask pattern to the dry material part. This type of device is often referred to as a wafer stepper. In another device, commonly referred to as a stepping and scanning device, each of the π h is a reference direction given by-under the & (Scanning " direction) continuously scan the mask pattern to illuminate. Because in general the projection system will have an enlarged mouth called < 1), the speed V of scanning the base table will be -factor M = to know "the speed of the mask table. The lithographic element described here More relevant information can be found in, for example, U.S. Patent No. 6,040,792. In one known manufacturing method using a lithographic projection device, a pattern (for example, in a photomask) is imaged at least partially overlying a layer of radioactive light. Material (photoresist) on the substrate. Prior to this imaging, the substrate can be subjected to various procedures such as coating, photoresist and soft baking. After exposure, the substrate can be subjected to, for example, post exposure baking (PEB). , Development, a hard baking and measurement and / or inspection of the image features. The program array is used as the basis for patterning an individual layer of a component such as a work piece. Such patterned layers can be Next, various processes such as etching, ion implantation (doping), metallization, oxidation, chemical formula, mechanical grinding, etc. are performed to complete a separate layer. If some layers are required, the entire program or its modification will be Must be reused for each new Layers and the overlapping (co-location) of these different stacked layers is performed as accurately as possible. For this purpose, 91784.doc 200528927 provides a small reference on one or more locations on the wafer- Yoshiichi's origin of the coordinate system on the wafer. Use light-to-electricity to integrate the base holder positioning element (hereinafter referred to as "alignment system"), and then the photomask can be juxtaposed each time A new layer is repositioned on top of an existing layer and can also be used as an alignment reference. In fact, an array of components will appear on the substrate (wafer). These components are then separated from one another using, for example, a cutting or cutting saw technique, whereby the individual components can be mounted on a carrier and connected to pins and the like. Further information about this type of process can be obtained, for example, from McGraw Hill Publishing Company, 1997. International book code is 0-07-06725 0-4, third edition by Peter van Zant. "Microchip Manufacturing: Semiconductor Processes." Practical Guide (Microchip Fabrication: a

Practical Guide to Semiconductor Processing). For simplicity reasons, this projection system will be called "lens" hereafter. However, this term should be interpreted broadly to include various types of projection systems, including, for example, refractive optics, reflective optics, and Reflective system. The radiation system may also include elements that operate according to any of these design types that instruct, shape, or control the projected beam of radiation, and such elements are collectively referred to below or individually as "lenses" Further, the lithographic device may be of the type having two or more base tables (and / or two or more mask tables). Such "multi-stage" components using the additional tables in parallel or preliminary steps may be Implemented on one or more tables, while one or more other tables are used for exposure. The two-stage lithographic device is described in, for example, US Patents 5,969,441 and 6,262,796. New tools and methods for developing lithography have brought for example Improving the resolution of image features patterned on components. Optical lithography tools and techniques continue to be 91784.doc 200528927 Improvements allow analysis Less than 50 nm. This may be by using a relatively high numerical aperture

(NA) lenses (greater than 0.75 NA), wavelengths as short as 157 nanometers, and many technologies such as phase shift Z-hoods, non-uniform illumination, and advanced photoresistance processes. The success of these sub-wavelength resolution processes will depend on the ability to print low-modulation images or to enhance the image's ability to tune to acceptable lithographic yield. Typically, the industry has used Rayleigh criteria to evaluate the resolution and focus depth capabilities of a process. The resolution and depth of focus (° F) are obtained through the following equations: Resolution = Κκλ / ΝΑ), and where human is the wavelength of the illumination source, and kjk2 is a constant for a specific lithography system. Therefore, for a specific wavelength, when the resolution is increased by the use of a higher NA tool, the depth of focus can be reduced. Dof losses with high NA are well known. However, polarized dry materials for high-NA partial coherence systems have not been tested. According to the following equation: I (r, Z〇) ^ J ^ (P〇) | Fr {0 (P ^ 〇) ^ where the image given, for example, a photoresist sheet, is the position r and a given focus position ZQ function. This equation is valid for all NA systems, and the image system is the sum of all polarized states i. This integral covers the distribution of sources defined by J. The Fourier terms in parentheses represent the electric field distribution leaving the transparent aperture. The four terms in 遽 are the objective lens spectrum 0, the polarization function P, the sheet function F, and the transparent aperture function 标. ·., 91784.doc 10- 200528927 According to this equation, the high NA image is intrinsically connected to the polarized state and the sheet structure, in which the electric field coupling and the power absorbed by a photoresist sheet can be completely changed. The power absorbed by an incident plane wave on a photoresist sheet is proportional to the amount of exposure required to develop the sheet. In Santa Clara, California, USA, February 27th to March 3rd, 2002, SPIE's 25th Anniversary Forum on Lithography Technology, published by Donis G, Flagello et al: "Entering the Golden Age Optical Lithography: Image: Optical Lithography into the Millennium: _ Sensitivity to Aberrations (Vibrations and Polarization) '' research has shown two orthogonal polarizations (transverse electrical polarization TE and transverse magnetic polarization) Quite apart at high NA, up to 25% power change. An imaging system contains many angles of incidence to reduce this effect. However, alternating phase shift masks (PSMs) require a small amount of homology to limit the total number of angles and thus produce similar The results have been obtained through simulation. It shows the difference in key dimensions from a fully polarized state, and the unpolarized state depends on the numerical aperture NA. The results also show that β has an alternating phase shift mask (PSM) dense line system is the most critical feature / and this has been configured by the transparent hole at the wafer level mainly produces 2 beams: the facts involved And this example tends to maximize the polarization effect. For example, if you choose a 0.85 (relatively high) numerical aperture and want to limit the system's critical dimension CD error to less than 3%, the residual polarization should be limited to 10%. The critical dimension CD is the minimum width of one line or the minimum space between two lines that is allowed to make a component. The simulation results also indicate that the filling of transparent holes and a part of the coherence level can reduce the polarization effect. The traditional lighting is small in these features. Partial 91784.doc 200528927 Light effects have been shown. Therefore 'when more intersecting image techniques are used, the lens "requires a small coherence level of weight." For example, high NA polarized light's polarized lighting produces fairly tight specifications. The emergence of the resolution enhancement technology (ret) for 'night :: / wenrun' can be extended ^ Shen 157 nanometers ^ learn lithography to a better low nanometer and may be lower than 50 nanometers without changing Ai makeup Mingyuan (Laser) or photomask technology. According to the Massachusetts Institute of Technology (MIT) in November / December 2001, J. Vac · Sci · Technology B 19⑷, famous by M · Switkes et a1 ·, 157 na Mizhi's infiltration lithography ", liquid / wenrun technology can potentially enhance the requirements of next generation lithography (NGL) technology such as extreme ultraviolet (UV) and electronic technology to shoot micro (EPL). The liquid immersion Technology involves the use of chemicals and photoresist to improve resolution. Wetting lithography can enhance the resolution of a projection optical system with a numerical aperture up to the refractive index of the wetting fluid. The numerical aperture NA is equal to the media index η and shrinks to The product of the light cone sine half-angle 影像 of a certain point image of the wafer (NA = n sin θ). Therefore, if NA is increased as the index N increases, the resolution can be increased (see equation: resolution = kl (UNA)). However, as mentioned above, the same na can be used on the polarized light of the lithography tool. Therefore, polarized light plays an incremental role in immersion lithography. [Abstract] An aspect of the present invention provides a radial transverse electronic polarizer element including a first layer having a first refractive index. Material, a second layer of material having a second refractive index, and a plurality of elongated elements periodically spaced in azimuth and placed between the first layer and the second layer. The plurality of elongated elements 91784 .doc 12 200528927 The piece interacts with the radiated electromagnetic wave to transmit the radiated electromagnetic wave light. In a specific embodiment, the first refractive index is equal to the second refractive index. In another specific embodiment, ° mysterious Several elongated elements form a plurality of gaps. 14 Some of the gaps may include, for example, *-^ or a third refractive index material with sound, in the example, the elongated elements periodically separate one of the selected one The pitch is the electromagnetic waves radiated in polarized-transverse electrical polarized light. In the specific example, this electromagnetic radiation is ultraviolet radiation. This alternative—a perspective provides—a radial transverse electronic polarizer element, including A base material having an H-emissivity and a plurality of elongated azimuth elements oriented to the base material, the elongated elements having a second refractive index. The elements are periodically spaced to form a plurality of intervals In this way, the radial transverse electronic polarizer element interacts with an electromagnetic radiation having first and second polarized light to substantially reflect the first polarized light of all radiation and transmit the second polarized light of substantially all radiation. In a specific embodiment of the present invention The first polarizing system is a transverse magnetic polarization & (TM) @The first polarizing system is a transverse electrical (TE) polarization. The plurality of elongated elements may be composed of, for example,! G, chromium, silver, and gold. The base material can be exemplified by silicon oxide, silicon nitride, gallium arsenide, a dielectric material, and a combination thereof. In another embodiment of the present invention, the radial transverse electronic polarizer optionally further comprises a thin layer of absorbing material. The plurality of elongated IT pieces are coated with a thin layer of absorbing material to absorb a certain wavelength of the electromagnetic radiation. The thin layer of absorbing material is selected so that the second polarized light which can be converted into a second degree of radiation 9I784.doc 200528927 the partially reflected radiation of the first polarized light is truly absorbed by the thin layer of absorbing material. ~ In this mode, the thin-layered absorbing material can truly eliminate the polarized halo of the transmitted radiation in the second polarized light. Another aspect of the present invention is to provide a polarizer element including a polarizing element and an absorber disposed on the back side of the polarizing element. The polarizing element interacts with the electromagnetic radiation including the first and second polarized light to actually reflect the first polarized light of all radiation and the second polarized light to actually transmit all radiation. The absorber contains a material that absorbs a certain wavelength of the private magnetic radiation. This material actually absorbs all the emitted second polarized light. The polarizer can be used in a reflective lithography device. In a specific embodiment, the polarizing element includes a plurality of elongated azimuth-oriented elements. The plurality of elements are periodically spaced to form a plurality of gaps. The plurality of elongated elements may be, for example, electrically conductive at a wavelength of the electromagnetic radiation. In an exemplary embodiment, the first polarization system is a transverse magnetic polarization and the second polarization system is a transverse electrical polarization. In another specific embodiment, the polarizing element includes a plurality of rings that are arranged centrally and periodically spaced. In an exemplary embodiment, the first polarization system is a lateral electrical polarization and the second polarization system is a lateral magnetic polarization. According to another aspect of the present invention, a lithographic projection device is provided. The device includes a radiation system configured to provide a radiated projection beam, a support structure configured to support a patterned element, the patterned element. A structured configuration to pattern the projected beam according to a desired pattern, a base table to hold a substrate, a structured configuration to project the patterned beam to one of the substrate dry material projection systems, and a structured configuration to polarize a A polarizer element that is a beam of radiation in the direction of transverse electrical polarization. 9l784.doc -14 · 200528927 Yet another aspect of the present invention is to provide a method for manufacturing a device, comprising projecting a patterned radiation beam onto a dry material portion of a photosensitive material covering at least part of a layer of radiation; and polarizing a lateral electric current. Radiation beam in polarized light. Another aspect of the present invention is to provide an element using the element manufactured by the above method. Although in the manufacture 10 according to the present invention, certain parameters can be used herein for the production of tβ, it should be clearly understood that such devices have many other possible applications. For example, it can be used to manufacture integrated optical systems, guidance and detection patterns for magnetic memory, liquid crystal display panels, thin film magnetic heads, and the like. One will understand that in this category of other applications, any terminology used in this article, reticle, wafer, or "bare die", should be considered by the generic terms "mask", "substrate", respectively And "the target part," are replaced. In this document, the terms "radiation" and "beam" are radiated as follows, with -UVEUV (extreme ultraviolet, for example, with a wavelength of 5, nanometer range) All types of electromagnetic radiation and particle beams such as ion beams or electron beams. [Embodiments] Some techniques have been used to generate polarized light. There are basically four kinds of polarized-natural beams, also unpolarized light. -Technology is based on birefringent or bi-radial materials. A second technology is based on the use of, for example, artificial coloring materials. _ The third technology uses thin film technology and uses the Brewster effect. A fourth technology is based on wire grids or conductive gratings. Manufacturing The use of birefringent polarizers in birefringent polarizers is known to polarize the light system. Birefringent polarizers can be produced from many crystals and some extended polymers. Compared to the other, birefringent materials have- Different: Academic index 91784.doc 200528927 The degree of difference in optical index between the two directions varies with the wavelength of the light. The difference is used to separate-linearly polarized beams from the other-beams. Use double folding; polarized light is especially invalid, Wavelength depends on efficiency and requires highly collimated light. For these reasons, birefringent polarizers are generally not used in optical systems.-Chromatic polarization is designed to absorb-polarize and transmit another large trowel The dichroic polarizer used is composed of a polymer layer that is extended to orient its molecules and treated with iodine and / or other materials or chemicals to make the molecules absorb-directionally polarized light. Object Polarization: The device absorbs all the intensity of a polarized light and at least 15% of the transmitted polarized light. When the photosensitive chemical of the polymeric material changes to make the material yellow or fragile, the extended polymer polarizer decreases with time. The device is also sensitive to heat and other environmental changes. In the last decade, a polarizer element has been developed in birefringent extended polymer layers. These extended layers reflect one polarized light and pass through another. The problem with polarizer technology is the low extinction ratio, which is close to 5. In some of the applications available, this extinction ratio is not suitable for imaging applications without a second polarizer. This type of polarizer also suffers from the aforementioned environmental problems. Thin film polarization The Brewster effect is used for the technology, where a light beam incident on a material surface such as glass, plastic or the like at a Brewster angle (approximately 45 degrees) can be divided into two polarized beams that are transmitted and the other reflected. Polarizer technology limits the range of angles at which the light beam is incident. In most components, the range of reception angles is quite narrowly limited to a few degrees. Thin Film polarizer technology also suffers from wavelength dependence due to the dependence of the Brewster angle on the wavelength of the incident light. 91784.doc 16 200528927 In image projection systems for applications that seek polarized beams, a brighter beam can always be used. Expected.-The brightness of the polarized beam is determined by many factors, one of which is its own light source. The other factor using a polarizer is the reception angle.-Has-Narrow or A polarizer with a limited reception angle cannot collect as much light as from a -use-wide reception angle system from a divergent light source. A polarizer with a large reception angle enables the design of a projection optical system, which is flexible. This is because The forehead is not positioned and oriented within the narrow range of the receiving angle of the light source. Another desirable feature of the polarizer is to effectively separate one polarizing element from the other 70 pieces. This is called the elimination ratio, which It is the ratio of the amount of light in the wanted polarizer to the amount of light in the unwanted polarizer. Other desirable features include free positioning of the polarizer in an optical projection system without reducing the efficiency of the polarizer and / or introducing additional constraints on systems such as the beam direction and the like. Another polarization technique uses a conductive grating or wire grid. A wire-lattice polarizer is a planar component with evenly spaced parallel electrical conductors, the length of which is much larger than their width, and the space between the conductive elements is smaller than the wavelength of the most frequent optical element of the incident beam. The technology has been successfully used in the radio frequency field and in the infrared region of the spectrum for several years. A polarized wave parallel to the conductor (S-polarized light) is reflected and an orthogonally polarized (P-polarized) wave is transmitted through the wire grid. This wire grid polarizer is mainly used in the fields of radar, microwave and infrared. With few exceptions in the visible wavelength range, this wire grid polarizer technology is not used for shorter wavelengths. For example, in U.S. Patent 6,288,840, a wire grid polarizer for the visible light spectrum is disclosed. The wire grid 91784.doc -17- 200528927 the polarizer is embedded in, for example, a glass material and includes an array of parallel elongated spacer elements sandwiched between a first layer and a second layer of material ^. The elongated elements form a plurality of spaces between the elements to provide a refractive index that is smaller than the refractive index of the first layer. The element array is structured to interact with electromagnetic waves in the visible spectrum to reflect most of the light in the first-polarized light and transmit most of the light in a second polarized light. These devices have-less than G 3 micron period and less than m card width 0 / will-another example of the use of wire grid polarizers for polarized light in the visible light spectrum is described in U.S. Patent 5,3 83, G53. -Wire grid polarizers are used in a virtual image display to improve the reflection and penetration efficiency of traditional beam splitters. The linear grid polarizer is used as a beam splitter in an axis-polarized virtual image display. The extinction ratio of the polarized light || is because the image has been polarized instead of the meaning of this application. Only high-efficiency reflection A penetration is of interest in this application. Published in the optical equipment document (ptics Letters), Volume 23, No. 20, pages 1627-1629, 1 ^ 〇 1 ^ 2 & 1 illustrates the use of wire grid-like surface to eliminate grating polarization. Lopez et al. Demonstrated the use of grating polarized light as a quarter-wave plate polarizer (phase delay π / 2) and normal incidence in the visible spectrum (the output of a 632 8 nm He-Ne laser). Angle 40. Polarized beam splitting state (PBS). The polarizer is a one-dimensional surface cancellation grating with a period of 0.3 micron and a 50% duty cycle. The grating material is a single layer of Si02 (refractive index 1.457) sandwiched between two layers of SisN4 (refractive index 2.20) on a fused zeolite substrate. However, the wire grid polarizer technology is not recommended for use in the ultraviolet wavelength 9l784.doc -18- 200528927, which is shorter than the lower visible wavelength limit of 400 nm. As described above, the development of a polarizer for ultraviolet radiation will increase the lithographic projection system resolution, and more specifically, increase the lithographic projection system resolution with a high NA, such as in the immersion lithographic system example. ’, Published in the SPIE Book 3879, pages 138-146 in September 1999, Feml et ai describes the use of " high frequency " gratings as polarizing elements. Two-dimensional gratings with characteristic wavelengths of illumination wavelengths less than 650 nanometers are manufactured by microstructure technology using direct electron beam writing method combined with continuous reactive ion engraving and stone glass. The diffraction efficiency of about 80% of the first-order transverse electron TE polarization and 90% of the diffraction efficiency of the 0th-order transverse magnetic tm polarization in a polarizing beam splitter can be defined by the two parameters ㊀ and ^. Where θ defines the relative quantities of TE and DW components and φ defines their relative phases. The incident wave can be represented by the following pair of equations:

Ate = cos Θ and ΑτΜ = ej (i > sin Θ. So 'for φ = 0, the wave system is linearly polarized at an angle 。. When θ = = π / 4 and φ ± π / 2 h can be less than To circular polarized light. A τε polarized wave system is represented by ㊀. A TM wave system is represented by θ = π / 2. TE and TM polarized systems are basic polarizing elements. Before entering the details of polarizing systems and polarizing lenses It should be wise to add polarized light to its application text, that is, to the lithography tool and method text. Figure 1 outlines a lithography projection device 1 according to a specific embodiment of the present invention. The device includes a structure and a radiation The system Eχ, IL provides a projected beam PB of radiation (eg 9l784.doc 19 200528927 extreme ultraviolet radiation), which also includes a radiation source LA in this specific example; a first object table (mask table) MT provides A photomask holder to hold a photomask MA (such as a graticule) and connected to a first positioning element pM to accurately position the photomask relative to a projection system PL.-Second object table (base table) WT Provide a substrate holder to hold a substrate w (such as a photoresist-coated silicon aa ) And connected to a first positioning element pw to accurately position the substrate relative to the projection system PL. The projection system (" lens ") pL (e.g. a lens group) is structured and configured to place the mask MA The radiating portion is imaged on the dry material portion C (for example, including one or more bare crystals) of the substrate w. As described herein, the device is a transmissive type (that is, has a transmissive mask). However, in general, it can also be a reflective type (with a reflective mask). In addition, the device can use another pattern element such as a programmable mirror array of the type referred to above. The source LA (such as a discharge or A laser manufacturing plasma source) generates a radiation beam. The radiation beam is fed, for example, directly or after crossing a conditionally acting element such as a radiation beam expander Ex, into a lighting system (luminaire) IL. The illuminator IL may Includes an adjustment element AM to set the outer and / or inner radial regions of the intensity distribution within the beam (commonly referred to as σexternal and σinternal, respectively). In addition, it will generally include, for example, an integrator IN and a condenser Various other elements of CO In this method, the beam PB hitting the mask MA has a desired uniformity and intensity distribution in its cross section. Corresponding to FIG. 1 it should be noted that the source LA can be in the lithography projection device (for example, when 3 Mysterious source LA is a common example when a mercury lamp is used, but it can also be remotely located from the lithographic projection device, and the radiation produced by the beam is fed into the device (for example, by combining 91784.doc -20- 200528927 suitable The latter scheme is a common example when the source la is an excimer laser. The present invention includes both of these schemes. 4 beams of PB are then intercepted and held on a mask table] viA Photomask MA. Cross that

In the mask MA, the beam PB passes through the lens pl to focus the beam pb on the dry material portion C of the substrate W. With the help of the second positioning element pw and the interferometer iF, the base table WT can be accurately moved ', for example, thereby positioning different target portions c of the beam pB path. Similarly, the first positioning element PM can be used to precisely position the mask MA relative to the beam PM path after mechanically removing the mask MA from a mask library or during scanning, for example. In general, moving the object tables MT and WT will be implemented with the help of a long-stroke module (universal positioning) and a short-strike module (fine-tuning positioning), which are not clearly described in the figure. However, in the example of a wafer stepper (as opposed to a stepping and scanning device), the reticle table MT may be connected to only a short-acting actuator, or it may be fixed. The photomask MA and the substrate can be aligned using photomask alignment marks M1 and M4 substrate alignment marks P1 and P2. The device can be used in two different modes. In step mode, the reticle table MT is mainly kept stationary, and the entire reticle image is immediately shot two, that is, a single "flash" is shot to the dry material portion c. The substrate table is then moved in the X and / or γ direction so that a different target portion C can be radiated by the beam PB. In the scan mode, one palladium palladium, σ 亍 rake material σ 卩 points are not exposed to a single "flash", except for the same, the main application is the same 、, j force is the place where the mask table MT The speed v can be moved in a given direction (the so-called, v | month evaluation direction, such as the Y direction) to cause the projected beam PB to be scanned over _ You Zhuo shirt image. At the same time, the base 91784.doc 200528927 bottom The table WT moves at the same time in the same or opposite direction at a speed of V and Mv, where M is the magnification of the lens (typically, 1/4 or 1/5). In this mode, a relatively large target portion C can be Exposure without compromising resolution. At present, lenses used to project lithography do not use TE polarizers. They are either linearly polarized or circularly polarized. The polarization state in the lithographic tools used in the present invention is not linear, The ring is unpolarized. The inventors have decided that in order to improve the resolution and to have better imaging at high NAs in immersion lithography with NA greater than 1, for example, it will need to suppress τμ polarized light in all characteristic orientations. Otherwise This contrast loss can be severe enough In order to eliminate TM polarized light and use only τε polarized light in lithographic projection, these inventors have discovered that using a radial polarizer in a ring-symmetric lens can selectively eliminate the TM polarizing element. Manufacturing radial polarized light The device is similar to the radial polarizer manufactured in the aforementioned wire grid technology. This can be fabricated on a lens element or embedded in the lens element by, for example, chromium or silver, dielectric or multilayer radial periodic metal wires. This is done. Figure 2A is a schematic diagram of a specific embodiment of a radial polarizer according to the present invention. The radial polarizer 20 has a periodic grating 22 arranged in a radially symmetrical pattern. The grating period can be according to other desired parameters. Select a specific emission wavelength to use. In this embodiment, the gratings are deposited on a substrate 24 which may be glass or other material. The gratings 22 may be, for example, aluminum, chromium, silver, gold, or Electromagnetic radiation beams are examples of metals of any material that conducts. These gratings can also be used, for example, in a multilayer structure such as two layers sandwiched between a fused quartz substrate and three layers. A SiO2 layer is composed of a dielectric or a combination, but is not limited to these. The gratings 22 can also be etched using electron beams 91784.doc -22- 200528927 to, for example, subsequently transfer a pattern to a GaAs substrate. Figure 2B It is an enlarged view of the grating 22 at the polarizer 20 area 26. As shown in FIG. 2B, the grating 22 is staggered to allow the polarization effect to be smoothly converted to maintain the uniformity of the TE polarization intensity along the diameter of the polarizer. Although the polarizer 22 is shown in FIG. 2A having a dish shape, the polarizer 20 may also be a polygon such as a rectangle, a hexagon, etc., but it is not limited to this. FIG. 3 shows a radial polarizer. An enlarged side view of another embodiment. The radial polarizer 30 includes a first layer material 32 having a first refractive index and a second layer material 34 having a second refractive index. A plurality of elongated 36 (or gratings) periodically spaced in azimuth are disposed between the first layer 32 and the second layer 34. The plurality of elongated elements 36 interact with light or radiated electromagnetic waves to transmit laterally polarized TE light and reflect or absorb TM polarized light. The plurality of elongated elements 36 may be composed of, for example, silicon dioxide and the first and / or second layers 32 and / or 34 may be composed of, for example, quartz, siloxane, dioxide, silicon nitride, germanium arsenide, etc. Any material or dielectric material of the wavelength of the emitted electromagnetic beam. Similar to the pre-brake embodiment, the spacing or period between the elongated elements 36 can be selected according to the polarizer that is desired, that is, a specific wavelength is selected according to other parameters in the lithography system. Similarly, although the polarizer 30 is shown in FIG. 3 as having a part or all of a dish shape, the polarizer 30 may be part or all of a polygon 'such as a rectangular shape, a hexagonal shape, etc., but is not limited thereto. Hitting the near ends of the polarizers 20 and 30. The often incident light will change its polarization state so that the output of the transmitted polarization state is orthogonal to the polarizer. 20, 30. 91784.doc • 23- 200528927 Grating lines 22, 36 directions. FIG. 4 is a vector diagram of a τE polarizer wheel with the preferred polarization direction 41. The polarization requirement of TE with a high NA system is larger than the edge of the light transmission hole. The day guard will cause more errors and defects towards the center of the polarizer. Dimming together Irradiation through dense lines (marked image lines) will produce 3rd order diffraction. At 42 is the 0th-order diffraction position of the light beam and at 44 and 45 are the relative positions of the + 1st-order diffraction and the "order-order diffraction" in a vertical line. 46 and 47 are the relative positions of the +1 order diffraction and "order" diffraction in a horizontal line. The +1 and -1 orders can interfere with peaks and valleys in the illumination that touches the wafer. If a TE polarized light is used for both vertical and horizontal lines, an interference pattern occurs that causes a high contrast and thus the lines have good resolution. However, in the linear polarization example, only one of the vertical or horizontal lines will produce a pure interference pattern with high contrast. !! The other vertical or horizontal line will not be properly polarized without forming an interference pattern and the contrast will be lower. The combination of high and low contrast images will, on average, cause all patterns to produce a low resolution or resolution imaging result. In order to avoid no interference or a small amount of interference from the component on the wafer, the inventors used a radial TE polarizer that allows interference patterns to occur in any azimuth direction of the lens. When each element is a combination of two linearly orthogonal polarized light but can be thought of as a function of position in a fixed space, this is not an example of circular polarization. Therefore, the use of ring-shaped polarized light does not produce interference lines, so it is not suitable for high-resolution imaging of lithographic systems, because in the wafer plane, ring-shaped polarized light is reduced to linearly polarized light and this disadvantage is described above. In an immersion lithography system, that is, a system with a high NA photolithography, it may be necessary to use a TE polarized light to obtain a resolution sufficient to image the dense line 91784.doc -24- 200528927 degrees. Figure 5 shows a processing window of Comparative Example 1 for imaging a 50 nm dense line with an unpolarized immersion lithography system. The wavelength used in this example is 193 nm. The / fork / 闰 " l system used is water with a refractive index of i.437 (NA = 1.437). Let the air equivalent numerical aperture NA be 1.29. The photoresist used in this example is PAR710 manufactured by Japan's Sumitomo Corporation on a matching substrate. This lighting system has a ring shape with σ = 0.9 / 07. FIG. 5 is a graph showing the relationship between the exposure latitude and the depth of focus in Comparative Example 1. FIG. This figure indicates that the exposure latitude at 〇focus is about 5.6%, which is an unstable level. At other focal depths, the exposure latitude decreases even more and makes an unpolarized light unstable in high NA lithography systems. Figure 6 shows a processing window for a 50 nm dense line with TE polarized light and infiltrating optical equipment according to an example of the present invention. The wavelength used in this example is 193 nm. The immersion flow system used was water with a refractive index of 437 (να = ι · 437). The photoresist used in this example is Pai * 70 on a compatible substrate. This lighting system has a ring shape with σ = 0.9 / 0.7. Fig. 6 is a graph showing the relationship between the focus depth at the exposure latitude. The figure indicates that the exposure latitude at a focus depth of 0.00 is about 9.9%, which is an unstable level. Compared with Comparative Example 丨, when using the TE radial polarizing system of Example 1 of the present invention, an improvement of 75% in the exposure latitude can be obtained. Compared with Comparative Example 1, DoF improvement in Example 1 of the present invention can be obtained. Therefore, an added processing window can be achieved by using the TE polarizer of the present invention. The exposure latitude at another focus depth decreases as the focus depth increases. Fig. 7 is a schematic diagram of a radial polarizer according to another embodiment of the present invention. The radial TE polarizer 70 is composed of a plurality of panel polarizers. Radial polarization 91784.doc -25- 200528927 The optical device 70 is manufactured by cutting a panel polarizer 72 having a linear polarization preference. The panel polarizer is cut into panel sections 72a-h to make a ring-shaped polarizer. The panel sections 72a-h are then combined to form a radial polarizer 70. Each panel segment 72a-h has a linear polarization vector state 74a-h. Therefore, by combining the panel segments 72a-h in this way, the linear vector polarization 74a-h will rotate to form a radial polarization structure. However, since the panel sections are discontinuous elements, in order to obtain one, continuous "TE radial polarization, the polarizer 70 is preferably rotated to randomize the optical path difference between the panels and ensure uniformity. The polarizer rotation system is not required but in some examples it will increase uniformity and depending on how the rotation is performed, the rotation speed can be selected to be very low or very fast. To perform this type of rotation, the polarizer 7 〇Can be mounted on, for example, an air bearing. In the Euv lithography example where at least a part of the lithography system is in a vacuum, another mounting solution can be provided. For example, the polarizer 70 can be installed on the magnetic instead of an air bearing On the bearing system. The rotation speed will dominate the polarization uniformity. In general, the rotation rate should be high enough to randomize the optical path difference between the panels to ensure uniformity. Figure 8 illustrates a radial TE polarization using the present invention. A specific embodiment of the lithography system of the camera. As mentioned above, the lithography system 80 includes an illumination or radiation system source 81, a mask or reticle 82, a projection lens 83, a substrate or wafer 84, and a radial TE polarized light. 20, 30, or 70. The radial TE polarizer 20, 30, or 70 is shown at the entrance of the projection lens in this specific embodiment, and is best close to the plane of the light transmission hole. Those skilled in the art will understand that the radial polarizer 30 or 70 can be positioned within the projection lens or, for example, anywhere outside the reticle or reticle and the projection lens between the projection lens 83. 91784.doc -26- 200528927 The best efficiency of a radial polarizer can be obtained when the polarizer is an ideal polarizer with a perfectly conducting grating (such as a 'wire grid or slender element'. In this case, the role of the radial polarizer For example, a perfect mirror with totally reflected light in the same polarized light (eg TM polarized light) and used for light with other polarized light (eg TE polarized light) will perfectly penetrate. The desired polarized light (TE polarized light) will be transmitted and the Unpolarized light (TM polarized light) will be reflected. However, 'if the radial polarizer is placed between, for example, the reticle 82 and the projection lens 83', the reflected light with unpolarized light (tm polarized light) can be transmitted back to the "Line 82. The reflected light having no polarization can be hit on the reticle 82 and reflected back toward the radial polarizer. In this process, a part of the light reflected by the graticule can undergo a polarization change. If, for example,

At least a part of the light polarized light becomes TE polarized light (the desired polarized light), and the part of the light having the D-E polarized light (the second light) can be transmitted through the radial polarizer because the radial polarizer is structured so as to have TE Polarized light passes through. Although the intensity of this polarized light is weaker than the TE polarized light that originally transmitted through the radial polarizer (main TE polarized light), it can penetrate the radial polarizer and may actually reach the substrate 84. This reflection phenomenon can repeat itself many times to change the polarization of the radial polarizer back and forth. This will cause halo in the polarized light, because the second TE polarized light is added to the TE polar light that originally traverses the radial polarizer (main te polarized light). This polarized light halo can eventually cause blurred imaging and result in a loss of imaging resolution. In order to minimize the possibility of polarized light halos in this imaging, the Mao Yue people have decided to coat the conductive grating (such as a wire grid) in a radial polarizer with a thin absorber to help reduce Retroreflections from the partial M and other objects such as the 91784.doc -27- 200528927 reticle 82. In a specific embodiment, a thin layer of absorber is selectively coated on the grating 22 of the radial polarizer 20 shown in FIG. 2A. The gratings 22 may be conductive elements made of, for example, aluminum, chromium, silver, gold, or a combination thereof. The thin absorption state of the layer may be any material used for absorbing the emission wavelength of, for example, Ah03 and anodized aluminum. The thin absorber may also contain a compound with low reflection. A suitable compound with low reflection may be BILATAL manufactured by a company from Germany. The other suitable low reflection compound includes A1N and CrOx (x is an integer). It has a thin layer by coating. The grating 22 of the polarizer of the absorber, the retroreflection (second TE polarized light) from the radial polarizer and the reticle is absorbed by the thin layer and the main chirped polarized light is rarely absorbed by the thin layer. This is Because the intensity of the retroreflective (second TE polarized light) light that is weaker than the main TE polarized light is relatively easy to be absorbed by the thin absorber of this layer. The thickness and / or material of the layer mouth and receiver can be Select or adjust to obtain the second retroreflected polarized light that you want to eliminate. In the above exemplary embodiment, it is known that the absorption retroreflection occurs between the radial polarizer and the graticule, and It should be understood that the above also applies to any object in the reflective polarizing path and the example of retroreflection that may occur between the #directional polarizer. By using an absorption medium in combination with a radial polarizer to eliminate the above-mentioned problem of not polarizing For imaging using the Penetration Lithography tool In use, "in the example system shown in FIG. However, in an example of a reflective lithography tool, another stripe is used to eliminate unpolarized light. In reflective lithography, this reflected polarized light is used for imaging. Therefore, the transmitted unpolarized light will be absorbed or eliminated 91784.doc -28- 200528927. FIG. 9A shows a polarizer having an absorber according to one embodiment of the present invention. The polarizer 90 includes a polarizing element 92 and an absorber 94. The absorber 94 is placed on the back side of the polarizing element 92 with respect to the incident light 96. The absorber 94 may be placed directly in contact with the back surface of a polarizing element 92 or slightly separated from the polarizing element 92. The absorber 94 contains a material that absorbs the wavelength of radiation used, that is, the wavelength of the incident light 96. The incident light 96 includes both TE element polarized light and TM element polarized light. As described above, in reflective lithography, the reflected polarized light is used for imaging and the transmitted polarized light is transmitted. In this example, for example, the TE polarizing element 97 (desired polarization) is reflected by the polarizing element 92 and the TM polarizing element 98 (not polarized) is transmitted by the polarizing element 92, for example. The transmitted TM polarized light may encounter objects such as other optical imaging elements in the lithographic apparatus in its path. Therefore, a part of the TM polarized light can be reflected back toward the polarizing element 92. This part of TM polarized light will cross the polarizing element 92, because the polarizing element 92 is "transparent" to TM polarized light. Although this part of TM polarized light is weaker than TE polarized light ( Polarized light), but can be added to mix the desired TE polarized light and cause the imaging resolution to deteriorate.

To eliminate possible reflections from other optical elements in the lithographic tool, the absorber 94 is introduced into the light path of the unwanted TM polarized light 98. In this method, the TM polarized light is absorbed by the absorber 94 along the thickness ta of the absorber 94 without touching objects in the lithography device that may reflect the TM polarized light. In addition, even if the thickness ta of the TM polarized light transmitted through the absorber 94 is not completely eliminated in the first channel of the light, the remaining TM polarized light that may be reflected on the bottom surface of the absorber 94 94B 91784.doc -29- 200528927 99 is permeable to the thickness of absorber 94 to be absorbed in its first channel. Therefore, the unnecessary T] y [polarized light is absorbed twice by the absorber 94, which results in secondary absorption / extinguishment of the TM polarizing element. This enhances the elimination of the TM polarizing element. The thickness ta of the absorber and / or the material can be selected or adjusted to obtain the retroreflected second TE polarized light which is to be eliminated. In another embodiment, the polarizing element 92 may be placed on top of a transmission substrate instead of the absorber 94. When the polarizing element 92 is placed on top of a transmission substrate, a '1/4 wave plate is placed on the back surface of the substrate to absorb the unwanted TM polarized light. In any specific embodiment, the extinction of the tm polarizing element is obtained by integrating an absorber of an absorbing material or a 1/4 wave plate. Even a quarter-wave plate may be placed between the polarizing element 92 and the absorber 94. In this example, 'Do not TM polarized light encounter the 1/4 wave plate and become circularly polarized by penetrating the 1/4 wave plate. Most of the ring-shaped polarized light is absorbed by the absorber 94. However, if some light is reflected back by the surface of the absorber 94, this reflected light will be sent to the 1/4 wave plate and polarized again in a ring shape, thus becoming TE polarized light. Since the polarizing element 92 reflects TE polarized light, the light that penetrates the quarter-wave plate for the second time is reflected by the polarizing element 92 and sent to the absorber 94. In this mode, the reflected light is absorbed by the absorber 94 again. This provides enhanced elimination or elimination of the unwanted polarization element, i.e. TM polarization. The polarizing element 92 shown in FIG. 9A may have a structure of a grating polarizer 92 A as shown in FIG. 9B or a ring polarizer 92B as shown in FIG. 9C. The grating polarizer 92A may be similar to the radial polarizer 20 shown in FIG. 2A. The grating polarizer 92A has periodic gratings 93 arranged in a radial symmetrical pattern at intervals in the azimuth. The solid arrow in FIG. 9B shows the structure of the te polarizer / 91784.doc • 30-200528927 and the dashed arrow shows the structure / direction of the TM polarizer. As mentioned above, a 7L piece of polarized light perpendicular to the direction of the gratings (grid lines or elongated elements), that is, perpendicular to the tangent lines, is transmitted and the polarized elements tangent to the rings are reflected. Therefore, the grating polarizer 92A reflects the TM polarized light and the polarized light is transmitted. In this example, the element used for imaging is the TM polarized element. However, the absorbing element 92 architecture is rarely used in reflective lithography. In contrast, the ring polarizer 92B structure shown in FIG. 9C is most commonly used for reflective lithography. The ring polarizer 92B has a ring percentage that can be placed on the absorber 94 (shown in FIG. 9A) or on a transfer substrate as described above. These ring% s are configured centrally and are separated periodically. The solid arrow in FIG. 9C shows the structure / direction of the TE polarizer and the dashed arrow shows the structure / direction of the TM polarizer. As mentioned above, a polarized light of the elements perpendicular to the grating directions, that is, perpendicular to the ring tangents, is transmitted and the polarized elements tangent to the rings are reflected. In this example, the TM polarized light is transmitted and the te polarized light is reflected. This tm polarized light is absorbed through the absorber 94 (shown in FIG. 9A). In this example, the element used for imaging is the TE polarizing element. Referring to FIG. 10, a method for manufacturing a component according to the present invention includes providing a substrate at least partially covered by a radiation-sensitive material S110, using a radiation system S 1 20 to provide a radiated projection beam, and using a patterned component to impart The cross-section S130 of the projection beam is a pattern, the patterned radiation beam is projected on a target portion of the layer of radiation-sensitive material S140, and a radiation beam polarized by a laterally polarized light S150. FIG. 11 is a schematic diagram of another specific embodiment of a polarizer 1000 for generating tangential polarized light according to the present invention. Conventional polarizing systems are known using, for example, beam splitting 91784.doc -31-200528927 cubic polarizing units. Beamsplitter cubes consist of precision right-angled prisms that are carefully glued to minimize the wavefront distortion butted with dazzling silicon. One of the prisms has a right-angled diagonal hypotenuse coated with a multilayer polarizing beam splitting coating (such as a birefringent material) to optimize a specific wavelength. The beam splitter emits an amount of incident light 'and at the cubic exit, in one of the two branches, the light is linearly polarized. Traditionally, in order to prevent the difference between printing horizontal and vertical lines, the polarized light is made into a ring with a 1/4 wave plate in the imaging system. However, as described above, the ring-shaped polarizing system is composed of both the basic polarizing elements TE and tm. According to the present invention, a polarizing plate 102 is introduced into a light transmitting hole of an imaging system including the cubic beam splitter 103. In a specific embodiment, the panel polarizer 102 includes half wave plates 104A and 104B. The panel polarizer 102 polarizes the linearly polarized light into a first s-polarized light 31 and a second s-polarized light §2 so that the wave vector of the first s-polarized light and the second s-polarized light 3 The wave vector of polarized light §2 is perpendicular to each other. The panel polarizer is placed at the end of the cube beam splitter 1 so that a polarization direction is limited to only two-quarters of the light transmitting hole. This system is suitable for printing horizontal lines, because the polarized light reaches the three-polarized light on the wafer. In the other two quarters, the half-wave phase shift is introduced through birefringence (at 45 degrees) and the sagittal polarized light is rotated by more than 90 degrees while becoming tangential. Then, the line is suitable for printing vertical lines. In other words, the first s-polarized light s 丨 is used to print a line on a horizontal-direction wafer and the second s-polarized light S2 is used to print a line on a vertical-direction wafer. In this method, both S and TE polarizations can be obtained for both vertical and horizontal lines. Furthermore, 'there are many modifications and changes that are easy to produce for those who are familiar with this technology', so the present invention is not limited to the correct structure 91784.doc -32- 200528927 and operation described herein. Even, for example, the relevant device used in the lithography technology and the invention of the present invention ~ The processes, methods, and devices tend to be complex in nature and it is usually best to use experience to determine the appropriate value of the operating parameter or computer simulation to achieve-^ Apply the best design to implement. Where appropriate, all appropriate modifications and equivalents shall fall within the spirit and scope of the invention. [Brief description of the drawings] These and other objects of the present invention will become apparent and easier to understand from the following detailed description of the preferred exemplary embodiments of the present invention in conjunction with the accompanying drawings, in which: FIG. 1 is in accordance with the present invention A lithographic projection device is schematically illustrated; FIG. 2A is a schematic diagram of a radial polarizer according to a specific embodiment of the present invention; FIG. 2B is an enlarged view of a grating in a polarizer region described in FIG. 2A; An enlarged side view of a radial polarizer in another specific embodiment; FIG. 4 shows the output from a D-E polarizer and the preferred polarization direction according to the specific embodiment shown in FIGS. 2A and 3; A relational diagram of exposure latitude to focus depth in Comparative Example 1; FIG. 6 is a relational diagram of exposure latitude to focus depth in Example 1; FIG. 7 is a schematic diagram of a radial polarizer according to another embodiment of the present invention; 8 shows a specific embodiment of a lithography system using a radial te polarizer of the present invention; FIG. 9A shows a schematic diagram of a lateral polarizer having a polarizing element and an absorber according to another specific embodiment of the present invention; FIG. 9B shows a specific example of a polarizing element used in the polarizer in FIG. 9a 91784.doc -33- 200528927; a schematic diagram showing an embodiment of the polarizer used in FIG. 9A; FIG. 10 is a representative of the present invention A flowchart of a method for manufacturing a component; FIG. 11 is a schematic diagram of a specific embodiment of another polarizer according to the present invention. [Illustration of Representative Symbols of the Schematic] Lithographic projection device 20, 30, 70, 72 '90, 92, 92B , 100, 10 Polarizers 22, 36 Grating lines 26 Areas 32, 34 One-layer material 36 Slim elements 72a-h Panel section 80 Lithography system 83 Projection lens 92 Polarizing element 94 Absorber 94B Bottom surface 93 Grating 95 ring 96 incident light 97 TE polarizer 98 TM polarizer 91784.doc -34- 200528927 99 103

104A, 104B

AM

C

CO

Ex

IF

IL

IN

LA, 81 Μ, P MA, 82 MT PB PL PM, PW SI > S2 S110, S140 S120 S130 S150

W, 24, 84 WT TM Polarized Beamsplitter Half-Wave Plate Adjustment Element Dry Material Part Concentrator Radiation Beam Expander Interferometer Illuminator Totalizer Source Alignment Mask Mask Mask Table Radiation Beam Projection System Positioning Element s-polarized light-sensing layer radiation system profile lateral electric polarization substrate base table 91784.doc -35-

Claims (1)

200528927 Patent application scope: 1. A radial transverse electronic polarizer element comprising:-a first layer material having a -first refractive index; -a second layer material having a second refractive index; and an azimuth angle A plurality of elongated elements that are periodically separated and trapped in the first floor and the second layer of the gate, and between 3, it allows the plurality of elongated elements to interact with the electromagnetic waves that are emitted and / or emitted to transmit the emitted electromagnetic waves. The horizontal electrical polarization. 2. If the radial transverse electronic polarizer element in the W range of the patent application, the first refractive index is equal to the second refractive index. 3. The oldest radial electronic polarizer element as claimed in the patent application, wherein the plurality of thin and long elements form a plurality of gaps. 4. The radial lateral electronic polarizer element of claim 3 in the patent claim, wherein the gaps include air. 5. The radial transverse electronic polarizer element as claimed in claim 3, wherein the gaps include a material having a third refractive index. 6. The radial transverse electronic polarizer element according to the first patent application range, wherein the plurality of elongated elements have a fourth refractive index. 7. The radial transverse electronic polarizer element of item 1 in the patent application of W, wherein a plurality of periodically elongated elements are separated by a selected period to polarize electromagnetic waves of light in a transverse electric polarization. 8. The radial transverse electronic polarizer element as claimed in item No. 丨 of the Patent Application, wherein the electromagnetic radiation is ultraviolet radiation. 9. A radial lateral electronic polarizer element comprising: 91784.doc 200528927 a base material having a first refractive index; and elongated elements oriented at a plurality of azimuth angles coupled to the base material, the elongated elements having A second refractive index; which causes the plurality of elements to be periodically spaced to form a plurality of gaps, so that the 忒 radial transverse electronic polarizer interacts with an electromagnetic radiation including first and second polarized light to substantially reflect all The radiation of the first polarized light substantially transmits all the radiation of the second polarized light. ίο. 11. 12. 13. 14. 15. If the radial transverse electronic polarizer element of the item 9 of the patent application scope, wherein the? -polarization system is a transverse magnetic polarization, and the second polarization system is a transverse electrical polarization Polarized light. For example, the radial transverse electronic polarizer element of the patent application No. 9 wherein the plurality of elongated elements is composed of an electrically conductive material at one wavelength of the electromagnetic radiation. For example, the radial transverse electronic polarizer element of item 11 of the patent patent is declared, in which the material of the electrical material is selected from the family consisting of Ming, chrome, silver and gold An electronic polarizer element, in which the base material is a 0-wavelength dielectric material that is authorized by the electromagnetic radiation. The radial transverse electronic polarizer element in item 13 of the patent application, the dielectric material in j Department, selected from the group consisting of quartz, oxygen cutting, nitrogen cutting, Shi Shenhua: and their combination. > The radial lateral electronic polarizer element of item 9 of the Shinyue patent, basin 1 The base material includes a dielectric material. ', 91784.doc 200528927 16. If the radial transverse electronic polarizer element of item 9 of the patent application scope further includes: a thin layer of absorbing material, the thin layer of absorbing material absorbs one wavelength of the electromagnetic radiation, wherein the The plurality of elongated elements are coated with the thin layer of absorbent material. 17. The radial transverse electronic polarizer element according to item 16 of the patent application, wherein the thin layer of absorbing material is selected so that a portion of the first polarized light which is converted into a second polarized light and a second reflected light is true The ground is absorbed by the thin layer of absorbent material. 18. A radial transverse electronic polarizer element as claimed in claim 17 of the patent, wherein the radiation of the first polarized light is absorbed by the thin layer of absorbing material in a very small amount. 19. The radial transverse electronic polarizer element of claim 18, wherein the thin layer of absorbing material truly eliminates the polarizing halo in a second polarized light transmission emission. 20. The radial lateral electronic polarizer element according to item 9 of the patent application, wherein the second polarizing system is a lateral electrical polarizing light. 21. The warp transverse electronic polarizer element according to item 16 of the application, wherein the thin layer of absorbing material is selected from the group consisting of Al203 and anodized aluminum. 22 · —a lithographic projection device, including:-a radiation system 'system', which is used to provide a projection beam; a building structure, which is used to support-a pattern element, the pattern element is based on an idea A pattern is required to pattern the projected beam; 91784.doc 200528927 a base table for holding a substrate; a system for projecting the patterned beam onto a dry material portion of the substrate; and light The device is used for constructing and arranging the projected beam which is polarized and radiated in the direction of transverse electric polarization. 23. 24. 25. Where is the scope of patent application? A lithographic projection device for members, wherein the polarizer element comprises: a first layer of material having a first refractive index; a second layer of material having a second refractive index; and periodically spaced at an azimuth angle and disposed on the A plurality of elongated elements between the first layer and the second layer, and the plurality of elongated elements in the middle of the σ σ interact with the radiation beam to transmit the laterally polarized light of the radiation beam. For example, the lithographic projection device of claim 22 in the patent scope, wherein the polarizer element includes: a base material having a first refractive index; and an elongated element that is oriented to a plurality of azimuth angles of the base material, the The elongated elements have a second refractive index, and the plurality of elements are periodically spaced to form a plurality of gaps, so that the radial transverse electronic polarizer interacts with the radiation beam including the first and second polarized light, Substantially reflects all the radiation of the first polarized light and substantially transmits all the radiation of the second polarized light. For example, the lithographic projection device according to item 24 of the patent application, wherein the polarizer element further includes a thin layer of absorbing material that absorbs 9I784.doc 200528927 to receive one of the wavelengths of the electromagnetic radiation, of which ^ plural An elongated element is coated with the thin layer of absorbent material. 26. 27. 28. 29. 30. 31. 32. 33. 34. For the lithographic projection device of the scope of application for item 25, the absorption material of the thin layer is selected so that the conversion becomes _ one of the second polarized light Part of the first polarized light of the two radiating children is partially absorbed by the thin layer of absorbing material. For example, the lithographic projection device according to item 26 of the patent application, wherein the radiation of the second polarized light is absorbed by a small amount of the absorbing material of the thin layer. For example, the lithographic projection device of the scope of patent application, wherein the thin layer of the absorbing material is truly eliminated-the polarized light halo in the second polarized light transmission radiation. For example, the lithographic projection device of the scope of application for patent No. 25, wherein the second polarized light is a lateral electric polarized light. For example, the lithographic projection device of the scope of application for patent No. 25, wherein the thin layer of the absorbing material is selected from the group consisting of Al203 and anodized aluminum. For example, the lithographic projection device according to claim 22, wherein a wavelength range of the radiation beam is in the ultraviolet spectrum. For example, the lithographic projection device according to the patent application No. 3 丨, wherein the wavelength range is between 365 nm and 126 nm. For example, the lithographic projection device according to claim 3, wherein the wavelength range is in the extreme ultraviolet. A radial lateral electronic polarizer element that interacts with an electromagnetic radiation including first and second polarized light to substantially reflect all the first-polarized light radiation and substantially transmit all the second polarized light radiation. The polarizer element includes: 91784.doc 200528927 A plurality of fan-shaped linear polarizer panels, each defining a plurality of parallel linear polarization directions, wherein the plurality of fan-shaped linear polarizer panels are arranged at an azimuth angle so that the plurality of parallel linear polarization directions are rotated to form a Radially polarized architecture. 35. 36. 37. 38. 39. The lithographic projection device according to item 34 of the patent application, wherein the radial lateral polarizer is constructed and configured to surround a plane perpendicular to a plane defined by the radial lateral polarizer Spindle rotates. A device manufacturing method includes: projecting a patterned radiation beam onto a portion of a dry material that at least partially covers a layer of a radiation-sensitive photosensitive material; and polarizing the radiation beam in a transversely electrically polarized light. A component manufactured by a method according to item 36 of the patent application. A tangent polarizer element includes: constructing and configuring a cube beam splitter polarizer to polarize at least a portion of incident light into a linearly polarized light; and a polarizing plate including two half-wave plates, wherein the polarizing plate system Placed at one end of the cube beam splitter polarizer to polarize the linearly polarized light into a first 3-polarized light and a second s-polarized light, so that a first S-polarized light wave vector and a The second s-polarized light wave vectors are perpendicular to each other. For example, the tangent polarizer element of the 38th patent scope, wherein the first s-polarized light is used to print a line on the wafer in a horizontal direction, and the second s-polarized light is used to print a line in a vertical direction. Printed lines on the wafer. 91784.doc 200528927 4 0. —A kind of polarizer element 'includes: a polarizing element and an absorber placed on a back surface of the polarizing element, wherein the polarizing element and a polarizing element include a first and a second polarized light The electromagnetic radiation interacts to substantially reflect all the radiation of the first polarized light and to substantially transmit all of the radiation of the polarized light, and the absorber includes an absorption material having a wavelength of the electromagnetic radiation, and the absorption material substantially absorbs all the first polarized light. Second, the radiation of polarized light. 41. The polarizer element of claim 40, wherein the polarizing element includes a plurality of elongated elements positioned at an azimuth angle, and the plurality of elements are periodically spaced to form a plurality of gaps. 42. The polarizer element according to item 41 of the application, wherein the plurality of elongated elements are electrically conducted at the wavelength of the electromagnetic radiation. 43. The polarizer element according to item 40 of the application, wherein the first polarizing system is a transverse magnetic polarization and the second polarizing system is a transverse electrical polarization. M. The polarizer element according to item 4G of the patent application, wherein the polarizing element includes a plurality of rings arranged in a concentrated manner, and the rings are periodically separated. & The polarizer element according to item 44 of the application, wherein the first polarized light system is a transverse electrical polarized light and the second polarized light system is a transverse magnetic polarized light. 46. A kind of use—such as the reflective micro-type of the polarizer of the scope of the patent application No. 40. 47. The polarizer element of the scope of the patent application of the 40th category, wherein the electromagnetic radiation skin long-absorbing material is selected from Al2O3 and The anthropomorphic composition of the Shin Shin. , 91784.doc