TW200511482A - Method of forming contact plugs - Google Patents
Method of forming contact plugsInfo
- Publication number
- TW200511482A TW200511482A TW092124301A TW92124301A TW200511482A TW 200511482 A TW200511482 A TW 200511482A TW 092124301 A TW092124301 A TW 092124301A TW 92124301 A TW92124301 A TW 92124301A TW 200511482 A TW200511482 A TW 200511482A
- Authority
- TW
- Taiwan
- Prior art keywords
- gate conducting
- layer
- conducting structure
- landing pad
- polysilicon layer
- Prior art date
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 229920005591 polysilicon Polymers 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
Abstract
A method of forming contact plugs is used on a semiconductor substrate with at least four adjacent gate conducting structures, wherein a second gate conducting structure and a third gate conducting structure are formed within an active area. First, a polysilicon layer is formed on the whole substrate to cover on all the gate conducting structures and fill all gaps between the gate conducting structures. Next, parts of the polysilicon layer is removed to leave the polysilicon layer serving as a landing pad in the gaps between the second gate conducting structure and the third gate conducting structure. Then, an inter-layered dielectric (ILD) layer is formed on the whole substrate to cover the landing pad. A bitline contact hole is formed in the ILD layer to expose the landing pad. Thereafter, the bitline contact hole is filled with a conductive layer to serve as a bitline contact plug.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW092124301A TW200511482A (en) | 2003-09-03 | 2003-09-03 | Method of forming contact plugs |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW092124301A TW200511482A (en) | 2003-09-03 | 2003-09-03 | Method of forming contact plugs |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200511482A true TW200511482A (en) | 2005-03-16 |
Family
ID=57798540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW092124301A TW200511482A (en) | 2003-09-03 | 2003-09-03 | Method of forming contact plugs |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200511482A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI636543B (en) * | 2017-07-19 | 2018-09-21 | 旺宏電子股份有限公司 | Internal connection structure and manufacturing method thereof |
| TWI871802B (en) * | 2022-12-30 | 2025-02-01 | 南韓商三星電子股份有限公司 | Semiconductor memory device |
-
2003
- 2003-09-03 TW TW092124301A patent/TW200511482A/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI636543B (en) * | 2017-07-19 | 2018-09-21 | 旺宏電子股份有限公司 | Internal connection structure and manufacturing method thereof |
| TWI871802B (en) * | 2022-12-30 | 2025-02-01 | 南韓商三星電子股份有限公司 | Semiconductor memory device |
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