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TW200503079A - Ionized physical vapor deposition process and apparatus thereof - Google Patents

Ionized physical vapor deposition process and apparatus thereof

Info

Publication number
TW200503079A
TW200503079A TW092118826A TW92118826A TW200503079A TW 200503079 A TW200503079 A TW 200503079A TW 092118826 A TW092118826 A TW 092118826A TW 92118826 A TW92118826 A TW 92118826A TW 200503079 A TW200503079 A TW 200503079A
Authority
TW
Taiwan
Prior art keywords
ionized
wafer
conductive mesh
vapor deposition
deposition process
Prior art date
Application number
TW092118826A
Other languages
Chinese (zh)
Other versions
TWI220767B (en
Inventor
Wen-Pin Chiu
Original Assignee
Promos Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Promos Technologies Inc filed Critical Promos Technologies Inc
Priority to TW092118826A priority Critical patent/TWI220767B/en
Priority to US10/605,160 priority patent/US20050006232A1/en
Application granted granted Critical
Publication of TWI220767B publication Critical patent/TWI220767B/en
Publication of TW200503079A publication Critical patent/TW200503079A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3471—Introduction of auxiliary energy into the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32697—Electrostatic control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
    • H01J37/3405—Magnetron sputtering
    • H01J37/3408—Planar magnetron sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3438—Electrodes other than cathode

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

An ionized physical vapor deposition process is described. A chamber having a metal target, a wafer pedestal, an ionized unit set between the metal target and the wafer pedestal and a conductive mesh disposed between the wafer pedestal and the ionized unit therein is provided. A wafer is put on the wafer pedestal. The metal target is set with negative bias and the conductive mesh is set with another less negative bias to deposit a thin film on the wafer. In the present invention, the incident ionized metal accelerates toward the conductive mesh and decelerates after passing the conductive mesh. Therefore, the step coverage of the deposited thin film can be increased and the substrate damage can be prevented.
TW092118826A 2003-07-10 2003-07-10 Ionized physical vapor deposition process and apparatus thereof TWI220767B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW092118826A TWI220767B (en) 2003-07-10 2003-07-10 Ionized physical vapor deposition process and apparatus thereof
US10/605,160 US20050006232A1 (en) 2003-07-10 2003-09-12 [ionized physical vapor deposition process and apparatus thereof]

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW092118826A TWI220767B (en) 2003-07-10 2003-07-10 Ionized physical vapor deposition process and apparatus thereof

Publications (2)

Publication Number Publication Date
TWI220767B TWI220767B (en) 2004-09-01
TW200503079A true TW200503079A (en) 2005-01-16

Family

ID=33563318

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092118826A TWI220767B (en) 2003-07-10 2003-07-10 Ionized physical vapor deposition process and apparatus thereof

Country Status (2)

Country Link
US (1) US20050006232A1 (en)
TW (1) TWI220767B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100206713A1 (en) * 2009-02-19 2010-08-19 Fujifilm Corporation PZT Depositing Using Vapor Deposition
WO2011141035A1 (en) * 2010-05-10 2011-11-17 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Device and method for gas flow sputtering
US8753724B2 (en) * 2012-09-26 2014-06-17 Front Edge Technology Inc. Plasma deposition on a partially formed battery through a mesh screen

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2251631B (en) * 1990-12-19 1994-10-12 Mitsubishi Electric Corp Thin-film forming apparatus
JPH0860355A (en) * 1994-08-23 1996-03-05 Tel Varian Ltd Treating device
US5840167A (en) * 1995-08-14 1998-11-24 Lg Semicon Co., Ltd Sputtering deposition apparatus and method utilizing charged particles
US5807467A (en) * 1996-01-22 1998-09-15 Micron Technology, Inc. In situ preclean in a PVD chamber with a biased substrate configuration
US6827824B1 (en) * 1996-04-12 2004-12-07 Micron Technology, Inc. Enhanced collimated deposition

Also Published As

Publication number Publication date
US20050006232A1 (en) 2005-01-13
TWI220767B (en) 2004-09-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees