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TW200506080A - Method of forming sputtering target assembly and assemblies made therefrom - Google Patents

Method of forming sputtering target assembly and assemblies made therefrom

Info

Publication number
TW200506080A
TW200506080A TW093104646A TW93104646A TW200506080A TW 200506080 A TW200506080 A TW 200506080A TW 093104646 A TW093104646 A TW 093104646A TW 93104646 A TW93104646 A TW 93104646A TW 200506080 A TW200506080 A TW 200506080A
Authority
TW
Taiwan
Prior art keywords
sputtering target
target
target assembly
made therefrom
assemblies
Prior art date
Application number
TW093104646A
Other languages
Chinese (zh)
Inventor
Robert B Ford
Christopher A Michaluk
Jr Charles E Wickersham
Original Assignee
Cabot Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cabot Corp filed Critical Cabot Corp
Publication of TW200506080A publication Critical patent/TW200506080A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

A method of forming a sputtering target assembly is described that involves explosively bonding a target grade plate and a backing plate member to form a bonded preform having dimensions such that a large target or several target assemblies can be obtained. The method includes optionally partitioning the bonded preform into a plurality of sputtering target assemblies. An interlayer can optionally be disposed between the target grade plate and the backing plate member before bonding. A bond quality test sample can be produced by the method. The sputtering target assemblies, the bonded preform, and the bond quality test sample are further described.
TW093104646A 2003-02-25 2004-02-24 Method of forming sputtering target assembly and assemblies made therefrom TW200506080A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US45019603P 2003-02-25 2003-02-25

Publications (1)

Publication Number Publication Date
TW200506080A true TW200506080A (en) 2005-02-16

Family

ID=32927618

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093104646A TW200506080A (en) 2003-02-25 2004-02-24 Method of forming sputtering target assembly and assemblies made therefrom

Country Status (3)

Country Link
US (1) US20040262157A1 (en)
TW (1) TW200506080A (en)
WO (1) WO2004076706A2 (en)

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EP1644143A4 (en) * 2003-07-14 2008-10-15 Tosoh Smd Inc Sputtering target assembly having low conductivity backing plate and method of making same
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US20070068796A1 (en) * 2005-09-26 2007-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method of using a target having end of service life detection capability
US8795486B2 (en) * 2005-09-26 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. PVD target with end of service life detection capability
JP5297378B2 (en) * 2006-09-12 2013-09-25 トーソー エスエムディー，インク． Sputtering target assembly and method of manufacturing the same
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US20080145688A1 (en) 2006-12-13 2008-06-19 H.C. Starck Inc. Method of joining tantalum clade steel structures
US8197894B2 (en) 2007-05-04 2012-06-12 H.C. Starck Gmbh Methods of forming sputtering targets
US8246903B2 (en) 2008-09-09 2012-08-21 H.C. Starck Inc. Dynamic dehydriding of refractory metal powders
RU2478732C1 (en) * 2011-09-13 2013-04-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Сибирский государственный индустриальный университет" Composite electrically blasted conductor for blast deposition of coatings or metal and alloy surface blast alloying
US9120183B2 (en) 2011-09-29 2015-09-01 H.C. Starck Inc. Methods of manufacturing large-area sputtering targets
RU2518037C1 (en) * 2013-03-25 2014-06-10 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Сибирский государственный индустриальный университет" METHOD OF ELECTROEXPLOSIVE SPUTTERING OF COMPOSITE WEAR-RESISTANT COATINGS OF SYSTEM TiC-Mo ON FRICTION SURFACE
US20170287685A1 (en) * 2016-04-01 2017-10-05 Honeywell International Inc. Sputtering target assembly having a graded interlayer and methods of making
WO2020027874A2 (en) * 2018-03-05 2020-02-06 Global Advanced Metals Usa, Inc. Spherical tantalum powder, products containing the same, and methods of making the same
KR102490248B1 (en) * 2018-03-05 2023-01-20 글로벌 어드밴스드 메탈스 유에스에이, 아이엔씨. Powder metallurgy sputtering target and its production method
CN108273994B (en) * 2018-03-30 2024-04-19 江苏理成科技有限公司 Preparation device and method of high-density molybdenum-niobium alloy target
US12217948B2 (en) * 2021-03-26 2025-02-04 Sumitomo Chemical Company, Limited Sputtering target, method of bonding target material and backing plate, and method of manufacturing sputtering target

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Also Published As

Publication number Publication date
US20040262157A1 (en) 2004-12-30
WO2004076706A3 (en) 2005-01-27
WO2004076706A2 (en) 2004-09-10

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