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TW200505050A - Solid-state component device and manufacturing method thereof - Google Patents

Solid-state component device and manufacturing method thereof

Info

Publication number
TW200505050A
TW200505050A TW093106393A TW93106393A TW200505050A TW 200505050 A TW200505050 A TW 200505050A TW 093106393 A TW093106393 A TW 093106393A TW 93106393 A TW93106393 A TW 93106393A TW 200505050 A TW200505050 A TW 200505050A
Authority
TW
Taiwan
Prior art keywords
glass
solid
component device
state component
manufacturing
Prior art date
Application number
TW093106393A
Other languages
Chinese (zh)
Other versions
TWI246780B (en
Inventor
Yoshinobu Suehiro
Mitsuhiro Inoue
Hideaki Kato
Kunihiro Hadame
Ryoichi Tohmon
Satoshi Wada
Koichi Ota
Kazuya Aida
Hiroki Watanabe
Yoshinori Yamamoto
Masaaki Ohtsuka
Naruhito Sawanobori
Original Assignee
Toyoda Gosei Kk
Sumita Optical Glass
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003160867A external-priority patent/JP2006086138A/en
Priority claimed from JP2003193182A external-priority patent/JP2006086139A/en
Priority claimed from JP2003342706A external-priority patent/JP4016925B2/en
Priority claimed from JP2003342705A external-priority patent/JP4303550B2/en
Priority claimed from JP2004010385A external-priority patent/JP4029843B2/en
Application filed by Toyoda Gosei Kk, Sumita Optical Glass filed Critical Toyoda Gosei Kk
Publication of TW200505050A publication Critical patent/TW200505050A/en
Application granted granted Critical
Publication of TWI246780B publication Critical patent/TWI246780B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/06—Joining glass to glass by processes other than fusing
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • H10W72/20—
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B23/00—Re-forming shaped glass
    • C03B23/20—Uniting glass pieces by fusing without substantial reshaping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0362—Manufacture or treatment of packages of encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H10W72/0198—
    • H10W72/072—
    • H10W72/073—
    • H10W72/536—
    • H10W72/5363—
    • H10W72/5522—
    • H10W72/884—
    • H10W74/00—
    • H10W74/15—
    • H10W90/724—
    • H10W90/734—
    • H10W90/754—
    • H10W90/756—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
  • Glass Compositions (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

The present invention provides a solid-state component device that can realize a glass sealing process at low temperature and has a sealing structure with high reliability. A P2O5-ZnO-based glass with low melting point is set parallel to a glass-containing Al2O3 substrate 3 on which a GaN-based LED component 2 is carried, and then a hot-press process is performed in a N2 atmosphere where the pressure is 60 kgf and the temperature is higher than 415 DEG C. Under this processing condition, the low melting point glass has a viscosity of 109 poise and is bonded to the surface of the glass-containing Al2O3 substrate 3 by the oxide formed thereon.
TW093106393A 2003-03-10 2004-03-10 Solid-state component device and manufacturing method thereof TWI246780B (en)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
JP2003063015 2003-03-10
JP2003160855 2003-06-05
JP2003160867A JP2006086138A (en) 2003-06-05 2003-06-05 Optical device
JP2003193182A JP2006086139A (en) 2003-07-07 2003-07-07 Light emitting device
JP2003342706A JP4016925B2 (en) 2003-09-30 2003-09-30 Light emitting device
JP2003342705A JP4303550B2 (en) 2003-09-30 2003-09-30 Light emitting device
JP2004010385A JP4029843B2 (en) 2004-01-19 2004-01-19 Light emitting device

Publications (2)

Publication Number Publication Date
TW200505050A true TW200505050A (en) 2005-02-01
TWI246780B TWI246780B (en) 2006-01-01

Family

ID=32996669

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093106393A TWI246780B (en) 2003-03-10 2004-03-10 Solid-state component device and manufacturing method thereof

Country Status (6)

Country Link
US (3) US7824937B2 (en)
EP (2) EP2596948B1 (en)
KR (1) KR100693969B1 (en)
CN (2) CN101789482B (en)
TW (1) TWI246780B (en)
WO (1) WO2004082036A1 (en)

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TWI462348B (en) * 2011-01-27 2014-11-21 矽品精密工業股份有限公司 Light-emitting device and its preparation method
TWI473246B (en) * 2008-12-30 2015-02-11 晶元光電股份有限公司 LED Diode Grade Package
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TWI721302B (en) * 2013-12-13 2021-03-11 日商日亞化學工業股份有限公司 Light emitting device

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