200427110 五、發明說明（l) 發明所屬之技術領域 極體之製造方法 本發明係關於一種發 先前技術 光發光二極體（LED )為日-η❿士 產品，1於昭明市$ Μ ρ &、、 D市場最被看好之新興 展口口八於…、d φ ~的發展潛力值得期姓 α ^ 絲燈泡及日光燈，LED具有體積*、//」相較^白熾鎮 熱）、耗電量低（低電壓、低電流起動m輪射一 小岬：上）、反應速度快（可高頻操作）、：>ί呆（耐•萬 耐衝擊不易破、廢棄物可回收、無污染）〈平封：成 燈廢棄物含汞等缺點，為被業界看好於未來十^内 ^ ::傳、：照明器具之一大潛力商品，隨者目前LED之、 光LED之應用也逐漸開展，包括：指示燈、攜帶 式:電向、LCD背光版、汽車儀表及内裝燈。簡而言之， 目岫白光LED乃以照明光源及背光源為當前之主要應用。 為使白光LED能夠具有高發光效率與演色性，近年來 使用螢光體與紫外線LED (UV LED ;其波長為35〇 — 45〇 nm )所形成白光LED之開發動向也備受關注，尤其是波長 382 nm與外部量子效率24% (動作電流20 „^時）之以丨㈣ 型為在已做過凹凸加工之藍寶石上使用選擇性長晶GaN基 板’因此大幅降低結晶之轉位密度並且提高内部量子效 率。若再加上覆晶（f 1 i p ch i p )結構則更加凸顯取光效 率’測试結果顯示低轉位密度可使效率提高2 · 5倍，覆晶200427110 V. Description of the invention (l) Method for manufacturing a polar body in the technical field to which the invention belongs The present invention relates to a light emitting diode (LED) of the prior art, which is a product of Japanese-η❿ 士, 1 in Zhaoming City $ Μ ρ & The most promising developments in the D and D markets are the emerging exhibits. The development potential of d φ ~ is worthy of the name α ^ Silk bulbs and fluorescent lamps. LEDs have a volume *, // "compared to ^ incandescent heat), power consumption Low volume (low-voltage, low-current start m-wheel shot on a small cape: up), fast response speed (high-frequency operation), > ί (resistance • 10,000 impact resistance, not easy to break, waste can be recycled, no pollution ） <Flat sealing: The disadvantages of mercury contained in the lamp waste are considered by the industry to be better than the next ten ^^ :: Biography :: One of the potential products of lighting appliances, with the current application of LED and light LED gradually , Including: indicator lights, portable: electric direction, LCD backlit version, car meters and built-in lights. In short, white LEDs are currently the main application of lighting sources and backlight sources. In order to enable white light LEDs to have high luminous efficiency and color rendering, the development trend of white light LEDs formed using phosphors and ultraviolet LEDs (UV LEDs with a wavelength of 35-40 nm) has also attracted much attention in recent years, especially The wavelength of 382 nm and the external quantum efficiency of 24% (at the operating current of 20 ^^) are based on the 丨 ㈣ type for the selective growth of GaN substrates on the sapphire that has been bump-processed, thus greatly reducing the translocation density of crystals and increasing Internal quantum efficiency. If the flip-chip (f 1 ip ch ip) structure is added, the light extraction efficiency will be more prominent. The test results show that the low transposition density can increase the efficiency by 2.5 times.
第4頁 200427110 五、發明說明（2) 結構可使效率提高1，7倍，兩項技術加乘結果比傳統藍寶 石側面取光多4 · 5倍量子效率。 利用U V光激發紅（r e d ; R )、綠（g r e e η ; G )、與藍 (blue ; B )等螢光體形成之白光LED與藍光激發釔鋁石榴 石（yttrium alumina garnet; YAG)螢光體所形成之白 光LED，於電流注入色度依存度上，當注入電流逐漸增 加，藍光與YAG所構成之白光LED，其藍光將逐漸變強，使 白光之色度變化則顯著改變；反之UV光激發之白光LED幾 乎不發生任何變化，亦即利用uv激發RGB之白光led照明光 源可透過螢光體之組合獲得高演色性（Ra >8〇 )之白光， 將使未來白光LED應用於一般照明之範圍更廣。 4用封裝白光LED之方式如圖一所示，其乃以點膠機 將含螢光粉8之樹脂1 〇塗覆於藍光或紫外光之晶片2上。因 其電極接觸點4與接觸線6於晶片2之上方，其擋住部分之 發射光線八此外螢光粉之塗佈因採點膠之方式，故其正面 發光較不均勻。因此於大面積生產時，以此製程之封裝技 術較不穩定且發光之均勻性差。 本發明有鑑於習知技術之缺點，乃發明以紫外光或藍 光復曰曰型晶片配合旋轉塗佈螢光粉於正面晶片發光處，可 使用於大面積之晶片封裝及提高產品之均勻度，故適合大 量生產。 發明内容 依本發明之封裝結構，如圖二所示，乃於可發紫外光Page 4 200427110 V. Description of the invention (2) The structure can increase the efficiency by 1,7 times. The result of the multiplication and multiplication of the two technologies is 4 · 5 times the quantum efficiency of light extraction on the side of the traditional sapphire. UV light is used to excite red (red; R), green (gree η; G), and white light LEDs formed with phosphors such as blue (B; B) and blue light to excite yttrium alumina garnet (YAG) fluorescence In terms of the chromaticity dependence of current injection, when the injection current is gradually increased, the blue light of a white light LED composed of blue light and YAG will gradually increase, and the chromaticity change of white light will change significantly. The light-excited white LED has almost no change, that is, the white LED light source using uv to excite RGB can obtain white light with high color rendering (Ra > 80) through the combination of phosphors, which will enable the future use of white LEDs. The range of general lighting is wider. 4 The method of encapsulating a white light LED is shown in Fig. 1, which uses a dispenser to coat a resin 10 containing fluorescent powder 8 on a wafer 2 of blue or ultraviolet light. Because the electrode contact point 4 and the contact line 6 are above the wafer 2, the light emitted by the blocking portion 8 is blocked. In addition, the application of the phosphor powder is by way of dispensing, so the front surface is relatively uneven. Therefore, in large-scale production, the packaging technology of this process is relatively unstable and the uniformity of light emission is poor. In view of the shortcomings of the conventional technology, the present invention is that the invention uses ultraviolet or blue light compound wafers and spin-coated fluorescent powder to emit light on the front wafer, which can be used for large-area chip packaging and improve the uniformity of products. It is suitable for mass production. SUMMARY OF THE INVENTION The package structure according to the present invention, as shown in FIG. 2, is capable of emitting ultraviolet light.
200427110 五、發明說明（3) 或藍光之覆晶晶片1 2上，利用旋轉塗佈之方式，將含螢光 粉8之樹脂1 〇，塗覆於覆晶晶片之非含接觸點4之平面上， 繼而將含螢光體層之樹脂1 〇烤乾及硬化後形成正面螢光體 層1 4，而後以切割機形成所需尺吋之晶粒，再將其以焊錫 1 6連接於基座1 8上。若需側面發光，則可以點膠方式將含 邊光粉之樹脂塗覆於晶片之側面，形成側面螢光體層2 〇。 該螢光粉例如包含選自於Y2〇3 : Eu、Y202S : Eu、SrS : Eu、 CaS：Eu > (Ba,Mg)A110O17:Eu,Μη; BAM:Eu,Mn >200427110 V. Description of the invention (3) or blue-light flip-chip wafer 12 using spin-coating method to coat the resin 10 containing fluorescent powder 8 on the flat surface of the flip-chip wafer without contact 4 Then, the resin 10 containing the phosphor layer is baked and hardened to form a front phosphor layer 14, and then a cutting machine is used to form crystals of a desired size, and then it is connected to the base 1 with solder 16 8 on. If the side is required to emit light, the resin containing the edge light powder can be coated on the side of the wafer by the dispensing method to form a side phosphor layer 20. This phosphor contains, for example, a material selected from the group consisting of Y203: Eu, Y202S: Eu, SrS: Eu, CaS: Eu > (Ba, Mg) A110O17: Eu, Mη; BAM: Eu, Mn >
ZnS：Cu, A1 ^ (Ba,Mg)Al10017； BAM:Eu > (Sr, Ca, Ba, Mg) l(KP04)6C12:Cu、Y3A15012:Ce，Gd 所構成群組之至少一種 材料。 ，本發明所形成之封裝結構，因正面發光層係以旋轉 =:式所形成，較習用之點膠方式所形成之發光層均 高發1:ΐ發？：ΐ膠方式形成側面發光層’將有助於提 合大量斗:疋故本發明之封裝方式具簡單及實用性，適 〇 大面積之紫外光與藍光激發螢光體而發光之 實施方式 包含ϊ ί i 3 3佳實施例之一種發光二極體之製造方法 以旋轉ΐ ί Ϊ i ί,之紫外光或藍光發光二極體晶片上 塗佈於非含3螢光粉之樹脂於轉速1 0 0 0 - 6 00 0 rpm 狹碉點之平面上。 200427110 五、發明說明（4) 2. 將上述晶片於真空（10-3 torr )烤箱中45 °C，受 熱5 - 1 0 分鐘，藉以清除氣泡。 3. 將消泡後含螢光體之晶片於120 °C受熱5 - 10 分 鐘，使螢光體層固化。 4. 利用切割機切割含螢光體固化層之晶片。 5. 將切割後之晶片置於含焊錫之基座。 6. 將該晶片於120 °C受熱5 - 1 0分鐘，使晶片固化於 焊錫上。 7. 利用點膠方式將含螢光體之樹脂層塗覆於晶片側 面，重覆步驟2與3，形成侧面發光層。 本申請案所揭示之實施例僅為本發明之具體實施例， 唯本發明之要旨並不侷限於此。任何以旋轉塗佈法將含螢 光體之樹脂層塗覆於發紫光或藍光覆晶晶片之方法，所得 之成品所實施之變化或修飾皆被涵蓋於本案之專利範圍。ZnS: Cu, A1 ^ (Ba, Mg) Al10017; BAM: Eu > (Sr, Ca, Ba, Mg) l (KP04) 6C12: Cu, Y3A15012: Ce, Gd. The packaging structure formed by the present invention is formed by rotating the front light emitting layer using the rotation =: formula, which is higher than the light emitting layer formed by the conventional dispensing method. : Forming the side-emitting layer by the glue method will help to attract a large number of buckets: Therefore, the packaging method of the present invention is simple and practical, and suitable for large-area ultraviolet and blue light to excite the phosphor and emit light. The embodiments include ϊ ί i 3 3 A preferred embodiment of a method for manufacturing a light-emitting diode is to rotate ΐ Ϊ Ϊ i ,, UV or blue light-emitting diode wafers are coated on a resin containing no 3 phosphors at a speed of 1 0 0 0-6 0 0 0 rpm on the plane of the narrow point. 200427110 V. Description of the invention (4) 2. The above wafers were heated at 45 ° C in a vacuum (10-3 torr) oven for 5-10 minutes to remove bubbles. 3. Heat the defoamed wafer containing the phosphor at 120 ° C for 5-10 minutes to cure the phosphor layer. 4. Use a cutter to cut the wafer containing the cured phosphor layer. 5. Place the diced wafer on a pedestal containing solder. 6. Heat the wafer at 120 ° C for 5-10 minutes to cure the wafer to solder. 7. Apply a phosphor-containing resin layer to the side of the wafer by dispensing. Repeat steps 2 and 3 to form a side-emitting layer. The embodiments disclosed in this application are only specific embodiments of the present invention, but the gist of the present invention is not limited thereto. Any method of applying a phosphor-containing resin layer to a violet-emitting or blue-light flip-chip wafer by a spin coating method, and the changes or modifications implemented in the finished product are covered by the patent scope of this case.
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