TW200424332A - Semiconductor device - Google Patents

Abstract

The provided is a semiconductor device, which is capable of achieving an excellent ohmic contact of low resistance without so-called cap layers when an aluminum-alloy thin film is employed as an electrode layer in fabricating a liquid crystal display device or semiconductor device. The present semiconductor device comprises of a substrate, a semiconductor layer formed on the substrate, and an electrode layer composing a wiring or electrode. The semiconductor device has a portion where the semiconductor layer and the electrode layer are contacted directly to each other. The electrode layer is formed of an aluminum-alloy thin film containing transition metals such as nickel, cobalt, or iron.

Description

200424332 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to a semi-carved one-resistance ohmic contact characteristic good body; in particular, to a low-power manufacturing. + Conductor element, the structure of liquid crystal display element [Prior technology] In recent years, the liquid that has become the structure of this project is becoming more and more obvious every day = = body element or having the same transistor (Thin Fiim τ ": Use it Liquid components are becoming increasingly insignificant every day, such as thin film integration, high speed, and so on. These semiconductor elements are significantly more effective. In response to this, the use of half-day = ground improvement with good characteristics is used to achieve a variety of hair development. The material structure of the Dou Niu half's body parts is also developed into material requirements. As a structural joint of the liquid crystal display element, by providing a direct production of red evening, # R day two pounds using 1τ〇 pancreatic (indium tin oxide (Aluminum alloy) and is equal to 7 poles, and it can maintain ohms r ..., 14 even if it is energized for a long time (refer to Patent Document 1). [Literary Literature 1] Japanese Patent Laid-Open No. 2 03-898 64 has a zinc alloy alloy film proposed by the Japanese patent application, which is characterized by containing at least one element of% and 22: 0.5 ~ 7.〇at (atomic) This ir (atomic)%, the remainder becomes aluminum. It is possible to form a wiring or structure of a liquid crystal display element by using an aluminum alloy thin film. The electrode layer of wood can be directly bonded to a transparent electrode, even if it is 2169-6320-PF (N2). Ptd No. 6 Page 200424332 V. Description of the invention (2) It can also maintain ohmic junction when it is energized in time, it can prevent the mutual diffusion of silicon and aluminum, and it can perform liquid crystal display elements with low resistance and heat resistance, especially with good resistance to Shrox. Manufacture. However, most of them are liquid crystal display elements such as semiconductor elements or TFTs. When forming an electrode layer constituting a wiring or an electrode, as described above, a thin alloy film is used. This is because high melting point materials such as group, chromium, titanium, or these alloys have been used. Because of the high specific resistance of such high melting point materials, the focus is on the results of aluminum that is easy to perform wiring processing. However, it is known that in the state where the electrode layer is formed by the alloy film, the following phenomenon occurs in the contact portions of the respective structural layers of the semiconductor element. This is because when the electrode layer formed by the aluminum alloy film and the silicon layer or the semiconductor layer (doped silicon, etc.) caused by silicon are directly contacted, silicon will be generated in the aluminum alloy film. Precipitation tends to occur, and there is a tendency to diffuse aluminum by a semiconductor layer made of silicon or the like and break the PN junction forming a semiconductor layer due to the diffused aluminum atoms. In addition, it is directly bonded to transparent In the case of electrodes, the junction resistance is changed due to the difference between the redox potentials of the two materials. In consideration of such an accident, that is, a low-resistance ohmic contact characteristic required for a semiconductor element or a liquid crystal display element, and using an aluminum alloy thin film as an electrode layer, a so-called cover made of Mo, Cr, or the like is formed. A cover layer (or a contact barrier layer. Hereinafter, the term "cover layer" is used as a concept including a contact barrier layer.) (For example, refer to Non-Patent Document 2).

2169-6320-PF (N2) .ptd Page 7 200424332 V. Description of the Invention (3) [Non-patent Document 2] Ryuu Uchida "Technology", the first edition, limited shares of eight, issued; the next generation of LCD monitors, P. 36 ~ 38 a Division Industrial Survey, November 1994; ^ layer and ㊁ :: in the state of the cover K = ° iTFT, formed in the semiconductor called = layer. In this regard, description will be given with reference to FIG. 1. In the cross-sectional view of $, as an example, the thin film is formed on top, and a free-electrode insulating layer 3 such as silicon oxide is formed. Next: SlN surface is formed on the nitrogen layer, which is formed through the 31 layer 4 on the inter-electrode insulating electrode. In this path d s. = The transparent alloy made by the 1τ〇 film is thin and becomes the drain electrode 8 、; The shield electrode layer 7 poles 9 on it 'through the electrode sound ^ T H by / Lu He * film to have m to form a distribution, wire or electrode, _ Yu and the alloy thin The characteristics of the low-resistance ohmic contact are set with Cr and M. The second cover layer is considered. This is caused by the aluminum alloy film: Material: J cover must be formed. That is, the cover + cover is formed. / 。; Second, inevitably, it becomes necessary, and its laminated structure is changed; increase. In addition, the cover layer system is not currently a semiconductor element of the so-called 丨 [, etc., which is also produced by the liquid crystal display, and is also provided in the same way. '., Π, even in addition, recently, there are ranks in the materials constituting the cover layer.

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200424332 V. Explanation of the invention (4) The market trend of use has also begun to cause big restrictions. The so-called cover is being formed. [Summary of the invention] ° [Problems to be solved by the invention] The present invention makes the above-mentioned components Or semiconductor devices are sometimes used as a background. In the state of manufacture, it is possible to provide a low-resistance ohmic contact material without a planed alloy film. ¥ body components. The applicant is wholehearted (Patent Document 1), and as a result, it has been found that the aluminum alloy that has been developed has low resistance ohmic contact characteristics even without forming a cover / invention. 2. A semiconductor element structure according to the present invention includes a semiconductor element including a semiconductor substrate and a wiring and an electrode, and a semiconductor layer and an electrode layer formed on the substrate, and a metal aluminum alloy film. The electrode layer is formed by the aluminum alloy film in the semiconductor body layer of the present invention. However, the electrode layer of this system can be directly metal. It is known that the aluminum alloy film of the electrode layer is a metal that should be migrated (S i) and silicide. As the materials for forming the cover layer are formed by ° ', which can be easily formed, or migrated gold such as Cr, W, etc .: To prevent the formation of silicon. Then, the inventors themselves diffused each other, therefore, a necessary technique is needed to create the shape of the liquid crystal display electrode layer to achieve a good thin film (Reference | It can also be realized that this semiconductor layer has a direct migration element Structure, bonded to a semiconducting silicon material containing a migrating semiconductor using silicon; also known in thin aluminum alloys

2169-6320-PF (N2) .ptd Page 9 200424332 V. Description of the invention (5) The film contains silicon. However, in the research of the aluminum alloy thin film developed by the present inventors, when the aluminum alloy thin film contains a migrating metal, it has been found that even if it is directly bonded to the semiconductor layer, silicon does not produce a thin aluminum alloy. In other words, it is learned that only by: having a migrating metal at 4 Μ 3, it is equivalent to the so-called low-resistance ohmic contact characteristic. The effect of the soap layer, that is, j = 5 brother 'can be used only in the aluminum alloy film containing the right, raise # Today is even if the formation of the waist does not form as a brother 3, there is an aluminum alloy film. The layer may also constitute a conductive element. Read :: The electrode layer of Cheng Zhi is directly bonded to the semiconductor layer, which is half of that in the alloy film. The 2 series is now under verification, but it is presumed that the interface when the ^ ^ layers included in the film are directly bonded, aluminum For this reason, di is the reason that it is not possible to form stone compounds. The cover layer is provided, so the conductor element structure is not required. The cover sound system can also be omitted. The layered structure of the pieces becomes simplistic and liters. In addition, since 丄 2 and 广 are widely used, the production efficiency is improved. It is called semiconductor activity 厣 = Mao Ming ’s so-called semiconductor layer package.

A silicon layer such as a Si layer. This: $ layer, doped n + type or p + type a _ conductor substrate, the so-called substrate in the liquid phase-this month contains half of Shi Xi and other semiconductor components, of course, the ordinary 7 broken glass substrate. Next, the present invention includes a TFT, a TFT, and the like, and a liquid crystal display element, which is widely constructed, for example. For + ¥ everything and having something like this, then in the semiconducting of the present invention a 70 pieces ’electrode layer system can have straight

2169-6320-PF (N2) .ptd Page 10 V. Description of the invention (6) Grounding bonding to a thin alloy film for liquid crystal display and containing redox potentials which have migration and oxidation of transparent electrodes. Conductor elements are also suitable. "Liquid reduction potential" means that the semiconductor element system that enters the present invention at a certain degree and equal to the reduction speed is preferably iron, starting, and recording. In the case of this alloy thin film, the redox potential and the heat resistance are maintained to contain one element. Alternatively, at least one element among them, such as sharp, copper, ruthenium, osmium, minba, and the like, may be used. The reason. = The part of the bright electrode. When the two layers of the electrode layer are formed, the electrode potential of the aluminum alloy thin film is made of transparent electrode materials such as ITO film and the like, which are at the same level. Therefore, the semiconductor display device of the present invention. In addition, the so-called "potential when the oxidation-reduction reaction of an oxidation reactant and its oxidation speed is equilibrium, the so-called equilibrium potential. Migrating metals contained in the alloy film of these components These migrating metal elements are very close to transparent because they are contained at the reduction potential The oxidation of the electrode is caused by oxidation, water, etc. These three kinds of migrating metals can contain more than two of these. Other metal elements such as titanium, vanadium, chromium, rhenium, nitrogen, tungsten, starvation, surface, platinum Since these groups know that it is easy to form stone compounds, it is best to form the aluminum alloy thin film of the electrode layer containing metal 0.1 to 7_0at (atomic)%. When the content is less than 0lat (atomic)% There is a tendency that the formation of silicide at the bonding interface becomes insufficient. Therefore, the reason is not clear. However, direct bonding to the semiconductor layer causes interdiffusion between Shi Xi and Shao, and at the same time, The oxidation potential of the Lu alloy thin film is significantly different from the oxidation-reduction potential of the transparent electrode, and therefore, the aluminum alloy film cannot be directly bonded to the transparent electrode. ’It ’s also caused by the tendency of the heat resistance of Mingming alloy film to disappear.

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V. Description of the invention (7) sake. In addition, when it exceeds 7.0 Oat (atomic)%, even if the substrate temperature is 20 (Tc to form the aluminum alloy film), the specific resistance value exceeds Qcm after heat treatment in a vacuum for 1 hour, and the helmet Λ method is formed. 5〜5. 元） ％。 The reason for the practical electrode layer of the semiconductor element. Next, it is more desirable that the content of the migrating metal in the aluminum alloy film is 0.5 ~ 5. When iron, cobalt, and nickel are contained as the migrating metal at less than 0.5 at (atomic)%, there is a tendency to decrease the thermal property. 2 :: 'The oxidation-reduction potential of the alloy film forming the electrode layer is Ϊ j ί The tendency to reduce the reduction potential to deviate becomes stronger. As the specific resistance value becomes larger than 5.0at (atomic)%,

Therefore, there is a tendency that the practically low-resistance characteristic cannot be maintained. 0 — = In addition, in the aluminum alloy film for forming an electrode layer of the present invention, it is preferably 12 when the alloy film contains carbon, which can effectively prevent It is because of the occurrence of the thermal sway produced by ... ] In the state where η is contained, it is preferable that the content of carbon is 0.1 to * ^^, atomic)%. Because the carbon content is less than 0.1 at (atomic) 〇 = ^ does not have the effect of suppressing the occurrence of thermal swing, at a value exceeding 3. 0 at (the atomic zero-day specific resistance value becomes larger, it is not practical to form a semiconductor device The reason for the thunder pole layer. In addition, in the research of the inventors, it was confirmed that when constructing a half-body element of the moon, the inscription-recording contains carbon as the inscription = the shape of the membrane The content of nickel is preferably in the range of 0.5 to 5 at (atomic)%, and, in practical terms, it is preferably 2. 0 to 4. 〇at (atomic)%

200424332 V. Description of Invention (8), Scope. When the recording temperature is less than 2.0at (atomic)%, the difference between the osmium oxide potential of the transparent electrode and the oxidation-reduction potential of the aluminum alloy film tends to become larger, and the heat resistance is higher than 350 ° C. The tendency to worsen arises. On the other hand, when the nickel exceeds 4, QM tends to have a larger specific resistance value, and there is a specific resistance after a heat treatment of 3nOt ”hours in the air, and a specific resistance of 0 ° C and 1 ° C. In addition, it has been confirmed that the content of 缘 or iron contained in the state of ^ is preferably 或 or iron and contains carbon, because the content is in the range of ~ 0at (atomic)%. Good heat-resistant electrode: Two can: when formed with low specific resistance, can be formed suitable for sophomore special = suitable for the electrode layer of liquid crystal display element. Faithful or South refined liquid crystal display [invention Effect] When using the body element 2: 1: =, it can be used in the manufacture of semiconductors without the so-called cover layer. ★ Second, it is an electrode layer state, even if it has characteristics. In addition, the date of delivery is good enough to achieve good performance. The low-resistance ohmic contact ITO film caused by the transparent electrode + conductor element can be used as a transparent element even if it includes an electrode to directly connect the electrode to the electrode, so it can be used for transparent elements. Also suitable as a liquid crystal display ] The following is a description of a comparative example of the rationale of the present invention. According to the present invention, according to the implementation examples and the strength of the body element structure, T100, the investigation of the adoption of the present invention will be started. The characteristics of the bonding between the semiconducting electrode layer and the semiconductor layer

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. Fig. 2 shows a test sample for investigating the joint characteristics. 5. Explanation of the invention (9) The results are explained in section. The test samples shown in Fig. 2 are laminated with an electrode layer 10) and a η-type Si substrate 20 (625 // m household sound) Fenguang (· 2 // ιη thickness thickness difference) and P-type a— The structure of the Si layer 30 (01 "m thickness, resistance value 5 ~ 10Qcm) is in the electrical type ^. The electrode layer 10 of the layer 30, the side outside, and the connection terminal u Table 1 The test sample ^ electrode layer 1 0 (10) was formed by the composition of an alloy thin film. The bonding characteristics were performed by measuring the current flowing between the terminals when a voltage was applied between the terminals. Then, because of the formation of The electrode layer 10 was heat-treated to investigate how its bonding characteristics changed. [Table 1] Electrode 餍 A1 Ni C Mo Cu Si Po Shi 1 96.8 3.0 0.2 One__ Conventional Example 1 — One_100 — _ Comparison 98.5 One — 0.5 1.0 Comparative Example 2 100 One One — — —

Ut (atomic%) The electrode layer of Example 1 is an aluminum alloy thin film containing nickel and carbon. Conventional Example 1 is formed using molybdenum as a cover layer as an electrode layer. In addition, for comparison, the electrode layer was formed of Shi Xi, an aluminum alloy film containing copper (Comparative Example 1), and a thin film made of aluminum only (Comparative Example 2). In addition, the heat treatment of each electrode layer is carried out in a state of a test sample in a nitrogen atmosphere at a temperature of 250 ° C, 300 ° C, and 350 ° C.

2169-6320-PF (N2) .ptd Page 14 200424332 V. Description of the Invention (ίο) It takes one hour. In addition, the film formation conditions for forming each electrode layer are 3.0 Watt (Watts) / cm2, an Ar gas flow rate of 100 ccm, and an Ar pressure of 0.5 Pa. The film formation time is about 6 by a magnetron and sputtering device. 0 sec (seconds) to form a thin film with a thickness of about 2000A (0.2 " m). The substrate temperature is 10 (ΓC. In Fig. 3, the results of the bonding characteristics of each electrode layer are shown. Fig. 3 (A) is the measurement result of Example 1, and Fig. 3 (B) is the measurement result of Conventional Example 1. Fig. 3 (C) shows the measurement results of Comparative Example 1, and Fig. 3 (D) shows the measurement results of Comparative Example 2. In addition, in each measurement result graph, the fine wave line system shows that no heat treatment (as deposition) has been performed. The thick wave line shows the state of heat treatment at 30 ° C (KC, the thin solid line shows the state of heat treatment at 300 ° C, and the thick solid line shows the state of heat treatment at 350 ° C. First, see Figure 3 (D From time to time, it was confirmed that in the case where the electrode layer was formed only by aluminum in Comparative Example 2, without applying heat treatment, the PN junction was broken, and with a negative applied voltage (in FIG. 2, on the terminal L1 side) Negative application is applied and the reverse current is also increased. In addition, in Comparative Example 1, an electrode layer was formed by an A 1 — Cu — Si alloy alloy film (FIG. 3 (C)) It contains Si. Therefore, it has no heat treatment and no heat treatment at 250 ° C. In the state of holding PN junction, rectification occurs when changing from negative applied voltage to positive applied voltage. However, it is confirmed that under the heat treatment conditions of 30 ° C and 350 ° C, normal conditions are not maintained. The PN junction also increases the reverse current with the increase of the negative applied voltage. On the other hand, when we see Figure 3 (B), we know that:

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200424332 V. Description of the invention (12) becomes smaller than the value shown in Figure 4. ♦ Next, the results of investigating the bonding characteristics between the electrode layer formed by the aluminum alloy thin film and the transparent electrode j formed by the ITO film in Example 1 will be described. Initially, the result δ of the result of measurement of the electric current durability when the electrode layer of Example 1 and the 1-Ni film were bonded was measured. FIG. 5 shows a method for measuring the current durability. On the transparent electrode 40 (0.2 / zm thickness) made of a 1-but film (Ιη2〇3-10wt% Sn02), an electrode layer (0 · 2 β01 thickness) is formed in a cross shape, and the arrow Part of the terminal part starts to be energized. Next, the current durability is measured by measuring the resistance between the terminals and measuring the time until the resistance between the terminals changes. In addition, the measurement environment of the current durability was 8 5 t: in an air atmosphere. For comparison with Example 1, the measurement was also performed on the electrode layer of A 1 (aluminum) -N d (') described in Table 2. [Table 1 Electrode calendar A1 Ni C Nd Bao Shi 1 96.8 3, 0 0, 2 — Comparative Example 3 98, 0 — — 2.0 The current endurance is determined by the electric k value 1 〇 # A, 1m A of 2 Species were measured by conducting electricity for 200 hours. In addition, in the electrode layer of Comparative Example 3, the state was directly bonded to the transparent electrode and a Cr film (0. 05 // m thickness) was formed between the electrode layer and the transparent electrode as a cover layer constituent material. There are two types of states where a joint is formed. Table 3 shows the results of the energization durability as a result of the energization time during which the resistance change between the terminals occurred.

200424332 V. Description of the invention (13) [Table 3] Electrode layer current Cr film electrification durability Example 1 10 β A-200h no change 1mA-200h no change Comparative Example 3 10 μ A Μ 〆 * !, 乂 in 4011, The resistance value changes slightly, and then it becomes constant resistance until 200h. 1mA Μ 8. In 130h, the resistance value changes greatly. Comparative Example 3 10 μA with 2001i without change 1mA with 200h without change As shown in Table 3, in the electrode layer of Comparative Example 3 with the cr film as the capping layer, even when it was energized for 200 hours, There is no change in the resistance between the terminals (resistance between terminals 6 E + 0 3 Ω). However, after the electrode layer of Comparative Example 3 was directly bonded to the transparent electrode without a Cr film, the resistance between the terminals was confirmed to increase after 40 hours at a current of 10 // A ( The initial resistance between the terminals changed from 6 £: + 〇3 Ω to 2.5 Ε + 5 Ω). Next, after a current of 1 m a for 130 hours, it was confirmed that the resistance between the terminals increased significantly (the initial resistance between the terminals changed from 4 E + 0 3 ◦ to 4E + 7 Ω). On the other hand, even if the electrode layer of Example 1 was energized for 200 hours, the resistance between the terminals did not change (resistance between terminals 5E + 03 Ω). Next, the results of investigating the durability of the current with respect to temperature will be explained. The current-carrying durability at this temperature was performed for the electrode layer of Example 1 and above (without a Cr film). Tears 丨 丨 Ning, Tubingbing ~ >, Λ, μ 人 μ ♦ + / Then the law system makes the current value to be 3 in A ', so that the resistance value of the interface P becomes; ^ 7? 登 日 / 古 d Pay, pack | 1 time point when Xinma ’s initial value is 2 times, as

200424332 V. Description of Invention (14) '' ------ Life. Next, the temperature at the time of energization was performed at 85 t, 100 ° C, μ, 200 ° C, and 25 ° C. In FIG. 6, it is shown that the resistance caused by the increase in the resistance of the joint at each temperature is measured. Figure 2 is a graph of Arrhenius plotting its life time relative to the reciprocal of the production at power-on. Figure 6 shows the life time of the vertical axis and the absolute temperature at the horizontal axis. When calculating the activation energy caused by the rise in the resistance of the joint by a straight line inclination extrapolated from the graph drawn by Arrhenius, it was found that in the implementation of 1, it became 1.65eV, and in Comparative Example 3, it became 0. · 42 eV. It can be confirmed from this result. · The electrode layer of Example 1 has an activation energy of about 3.3 times more than that of Comparative Example 3. In addition, it is predicted from FIG. 5: 85 of the connection & The endurance life of energization is in Comparative Example 3, which is only about 2 hours, and in Example 1, there is also about 70,000 hours. Then, observe the interval between the electrode layer and the transparent electrode in Example 1 and Comparative Example 2. The results of the bonding interface will be described. In FIG. 7, the two electrode layers After bonding to a transparent electrode made of IT 〇 film for about an hour (current is about 1 mA), FIB (Focused Ion Beam)-SEM (scanning electron microscope) and metal microscope Observe the section. The preparation conditions of this sample are the same as those described in Example 1 and Comparative Example 2, and the description is omitted. Figure 7 (A) is a cross section of the state of Comparative Example 1, and Figure 7 (b) is implemented The cross section of the state of Example 1. When you saw this, you know that in Comparative Example 1, after the power was applied, the joint between the A 1 film and the IT 0 film was modified and peeled. On the other hand, it was found that: In the state of Example i, no deterioration occurred even after power was applied.

200424332 V. Description of the invention (15) Next, the results of measuring the oxidation-reduction potentials of the Cr, M0, and I T0 films used as the constituent materials of Example 1, Comparative Examples 2 and 3, and the masking layer will be described. The measurement of the redox potential is to form a potential measurement sample by using a thin film of a predetermined thickness (0.2 "111) of each process to form the broken glass substrate cut out on a glass substrate. Then, The surface of the sample was exposed to an area equivalent to 1 cm2, and a vertical electrode for measurement was formed. The emulsification reduction potential was measured using a 3.5% sodium chloride aqueous solution (the liquid temperature McCaw electrode system was measured using silver / silver chloride. This film system was used 1—10wt% SnO2 composition. The results are shown in Table 7. Sample oxidation-reduction potential (V) Bao Shi Example 1 -1,02 Comparative Example 2 -1.64 Comparative Example 3 -1.58 Cr -0,78 Mo 1 ~ —-- ~~ --- -0.51 ITO film-0.82 As shown in Table 4 'Assured ... Compared with the more wasteful oxygen! It is close to the oxidation of the continuous film Example 1 From the description, ... It was learned that: ^ ^ — thin film 'can be formed, and the conductor element 2 :: The cover layer of the aluminum alloy that has been used in Example 1 can also be realized; 造 even if it does not have the inter-electrode bonding characteristics hr 于 and 1τ 〇Transparent film is not "good", so it is also very suitable for liquid crystal display.

2169-6320-PF (N2) .ptd Page 20 ZUU4Z4JJ2 Description of the invention The structure of the element. In view of the bonding characteristics of the electrode layer of Example 1, it will be adjusted in Fig. 8 and the results of the observation and the bonding resistance will be explained. The acoustic noise of the electrode 1 is observed by a transmission electron microscope (TEM). The example is transmitted through; the joint portion of the Π layer Λ ', and in FIG. 9 and FIG. 10, the j 2 mirror (TEM) between transparent electrodes is shown. Observe that the electrode layers of Example 1 and 2 were prepared in the n-type. Substrate (black part in the middle and lower part of the photo, two Sit type ;: sample of the Sl layer (in the middle part of the photo, located in the "central part") into the upper part of the second part of the V? Film, about 2 ° -thickness工 而 i 丨 ν # 丄 Progress 2 5 0 c, heat treatment for 1 hour, carry out Calaihuai ... \ F 1 β to observe the sample profile, and use TEM (magnification 100,000 times to enter the observation phase. On this eve Probably, at several places, Lai specific company B 様 1 is known from the diffraction image of electron wire and can be learned by observing the cross section. Second, the organization of the part is determined. From Figure 8 1 φ + will only know In the case where the electrode layer of Example 1 is bonded to the Si layer, the gold picture 9 of the "quotation" in the " " is precipitated. The figure 9 is prepared on an ITO film (transparent electrode of M-10) (phase); A sample of the electrode layer of Example i (a pure white part with a thickness of about 200 nm in the upper center of the photo) of Example i was formed on the surface of the middle and medium water Ty, ^, and a deep black π knife with a thickness of about 15 nm on the lower side. Heat treatment at a temperature of 300 ° C for 1 hour, processing can be performed by ηβ to observe the sample section, and ™ (100,000 times magnification) Police photo. Figure ι〇

2169-6320-PF (N2) .ptd $ 21 200424332 V. Description of the invention (17) This is a photo of the joint interface (magnification: 100,000 times) enlarged in Figure 9. It is confirmed by the enlarged phase of the graphic worker 0. There is a reduction potential between the transparent electrode side (f photo in the photo, the inside color f) and the electrode layer side (the white part in the photo, the upper part). I in success: Check the heart and then explain the joint resistance evaluation. In FIG. 11, the meanings of each potential value and the oxidation-reduction potential value of the 1το film were determined. Example 1, Comparative Example 3, and the electrode layer of the laminated structure k between the pure αι film and the cr film were bonded to the IT0 film to measure the resistance Τ. : The determination method is made as shown in Figure 5: J back (as-deP0 (as deposition) by hunting, heat treatment and various temperature sounds at 300 ° C, 隹 \ 有 士 ", processing ( The measurement of the σ resistance measured at 20 0, 25 (TC resistance value. Now after a small day ^ annealing) is measured by the six lines shown in Figure 5, in the ITO 0 The film Γ τ 〇, and it is 40 (0.2 _ thickness: 3 W 〇 / 〇 2) caused by the number of transparent electrodes) 'from the terminal part of the arrow part 2: the electrode layer 10 (0 2 P-thick overlap (~ resistance measurement = resistance, the electrode layer of the laminated structure of the calculated film is in the Cr film " =. Pure A1 film and .0.2 between the films. In addition, 1 is shown in Table 4 == On, Cheng Chun_ The potential difference of each electrode layer is based on this: Bit: Straight ^ Junction resistance value (Figure 丨 丨). 彳 At first glance, ^ axis, depict each when you see the figure: confirm that In the state of a Cr film having a potential almost the same as that of 1 2169-6320-PF (N2) .ptd Page 22 200424332 V. Description of the invention (18) I T0 redox potential, the junction resistance is very low. Confirm In the state of the electrode layers of Example 1 and Comparative Example 3, the bonding resistance value of Example 1 with a relatively small potential difference was relatively low. In the electrode layer of Comparative Example 3, when the heat treatment was performed, the bonding resistance significantly increased. It can be inferred from the results of FIGS. 8 to 11 that the electrode value and the redox potential itself of Example 1 have a value close to the redox potential of the I T0 film. Therefore, when the electrode is bonded to the transparent electrode of the I T0 film, The junction resistance system is also low, and the intermetallic compound of A 13 N i is precipitated at the joint interface by performing heat treatment, so as to achieve good joint characteristics. The reason is considered to be due to the oxidation-reduction potential of Al3Ni ( -0 · 73V) is a value close to the redox potential of the transparent electrode (-0 · 82V) of the ITO film, so it is not easy to cause an electrochemical reaction with the ITO film, and it does not cause damage to the joint.

2169-6320-PF (N2) .ptd Page 23 200424332 Brief Description of Drawings Figure 1 is a schematic cross-sectional view of a conventional TFT. Fig. 2 is a cross-sectional view of a test sample for investigating joining characteristics. 3 (A) to (D) are measurement patterns showing the results of the bonding characteristics of the respective electrode layers. Fig. 4 is a graph showing the relationship between the reverse current value of the applied voltage of -1 V and the heat treatment temperature of each electrode layer. Fig. 5 is a perspective view of a test sample for measuring the durability of electrical conduction between the electrode and the transparent electrode. Fig. 6 is an Arrhenius plot for measuring the electrical durability due to temperature. Figures 7 (A) ~ (B) are cross-sectional photographs of the joint between the electrode layer and the transparent electrode in Example 1 and Comparative Example 2. Fig. 8 is a photograph of the cross section of the junction between the electrode layer and the Si layer of Example 1 by T EM. Fig. 9 is a photograph of a cross section of a junction between the electrode layer and the transparent electrode of Example 1 by TEM. FIG. 10 is an enlarged photograph of the cross section of the joint in FIG. 9. Fig. 11 is a graph showing the relationship between the junction resistance and the potential difference between IT0. [Symbol description] L1 ~ terminal; L2 ~ terminal; 1 ~~ glass substrate; 2 ~ gate electrode; 3 ~ gate insulation layer; a-Si layer; 5 ~ n-type a-Si layer; 6 ~ Transparent electrode

2169-6320-PF (N2) .ptd Page 24 200424332 Schematic description of 7 ~ cover layer; 8 ~ electrode electrode; 9 ~ source electrode; 10 ~ electrode layer; 10 '~ electrode layer; 20 ~ η-type Si substrate; 30 ~ p-type a-Si layer; 40 ~ transparent electrode.

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Claims (1)

200424332 6. Scope of patent application 1. A semiconductor device, comprising: a substrate, a semiconductor layer formed on the substrate, and an electrode layer constituting a wiring or an electrode, characterized in that it has a portion that directly joins the semiconductor layer and the electrode layer; the The electrode layer is formed of an alloy thin film containing a migrating metal. 2. The semiconductor device according to item 1 of the patent application scope, wherein the aforementioned electrode layer has a portion directly bonded to a transparent electrode for liquid crystal display. 3. For the semiconductor device according to item 1 of the patent application scope, at least one of the elements in the metal-based iron, junction, and record is migrated. 4. The semiconductor device according to item 2 of the patent application scope, wherein at least one of the elements in the metal-based iron, junction, and record is migrated. 5. The semiconductor element according to claim 1 in the patent scope, wherein the aforementioned Shao alloy thin film contains a migrating metal of 0.1 to 7. Oat (atomic)%. 6. The semiconductor device according to item 2 of the scope of patent application, wherein the aforementioned I-Lu alloy thin film contains 0.1 to 7.0 at (atomic)% of the migrating metal. 7. The semiconductor device according to item 3 of the patent application scope, wherein the above-mentioned Lu alloy thin film system contains 0.1 to 7.0 at (atomic)% of the migrating metal. 8. The semiconductor device according to item 4 of the scope of patent application, wherein the above-mentioned alloy thin film contains a migrating metal of 0.1 to 7.0 at (atomic)%. 9. The semiconductor device according to any one of claims 1 to 8, in which the aforementioned Lu alloy thin film contains carbon. 10. The semiconductor device according to item 9 of the scope of patent application, wherein the aforementioned aluminum alloy thin film contains carbon in an amount of 0.1 to 3 Oat (atomic)%. 2169-6320-PF (N2) .ptd Page 26