TW200411821A - Mechanical recycling of a wafer comprising a buffer layer, after having taken a layer therefrom - Google Patents

Abstract

Method of recycling a donor wafer (10) after taking off at least one useful layer, the donor wafer (10) comprising successively a substrate (1), a buffer structure (1) and, before taking-off, a useful layer. The method comprises employing mechanical means to remove part of the donor wafer (10) on the side where the taking-off took place, such that, after removal of substance, there remains at least part of the buffer structure (1) capable of being reused as at least part of a buffer structure (1) during a subsequent taking-off of a useful layer. The present document also relates to: -methods of taking off a thin layer from a donor wafer (10) which can be recycled according to the invention; -donor wafers (10) which can be recycled according to the invention.

Description

200411821-A7-B7 V. Description of the invention [Technical field to which the invention belongs] The present invention relates to a donor crystal including a buffer layer after transferring a thin semiconductor layer from a donor wafer to a receiving substrate. Round recycling. [Prior art] The term "buffer layer" generally refers to a transition layer between, for example, a first crystal structure and a second crystal structure of a substrate, the second crystal structure having properties that modify the material (such as structure or stoichiometric properties, or Atomic surface recombination properties). 10 15 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 20 In the special case of the buffer layer, the latter makes it possible to obtain a second crystal structure, and its lattice parameters are substantially different from those of the substrate. For this purpose, the buffer layer may have a composition that gradually changes with thickness, and then the gradual change in the composition of the buffer layer is directly related to its gradually changing lattice parameter. It can also have more complex patterns (such as a change in a composition with a variable rate, a reversal of the sign of the rate, or a discontinuous jump in the composition). This pattern may utilize a fixed composition layer containing defects and carry out. Next, 'metamorphic (buffer) layers or metamorphic embodiments are mentioned, such as metamorphic epitaxy. In order to create a special structure, one layer or a superimposed layer generated on the buffer layer may be removed from the donor wafer so as to be transferred to the receiving substrate. One of the main applications for transferring the thin layer formed on the buffer layer is the formation of a strained stone layer. This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) V. Description of the invention 5 10 15 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 20 If the interface of the first layer has the nominal lattice parameters It is composed of materials that are larger than or smaller than clothes. ^ By—a kind of pull m shrinks, should be = 'if the "relaxed" material is close to f-the nominal lattice of the layer II, Γ can be said by' "Relax" material, where the rod is called the Rigrig number system is the material, lattice parameters. Crystals in a monolithic form under a thousand-equivalent shape When the -layer system is composed of pins with tensile strain, certain characteristics such as the electron mobility of the material can be significantly improved. Other materials, such as SiGe, can also be substantially removed. Then, especially by a process called Smart_cut @, which is well known to those skilled in the art, transferring such a layer onto a receiving substrate makes it possible to produce a structure such as an SOI (semiconductor on an insulating layer) structure. For example, after removing a relaxed SiGe layer, the resulting structure can then be used as a support for silicon growth. Because the nominal lattice parameter (depending on the germanium content) of SiGe is greater than the nominal lattice parameter of Shi Xi, the growth of SG0I (with & Xi germanium) on the pseudo substrate is obtained. Makes it possible to provide a layer of silicon with tensile strain. For example, one example of this process is described in the IBM literature by LJ Huang et al. ("SiGe (SiGe-On_Insulator) is used on the insulating layer prepared by wafer bonding and layer transfer for high-performance field effect transistors." prepared by wafer bonding and layer transfer for high- -4- This paper size is applicable to China National Standard (CNS) A4 specification (210x297 public love) 200411821 A7 B7 V. Description of the invention performance field-effect transistors), Applied Physics Letters, (February 26, 2001, Volume 78, No. 9), in which the method of manufacturing Si / SGOI structures appeared. Another example of this process is published in the document US 2002/007481 5. Other applications of metamorphic growth It is possible, especially for III-V semiconductors. Therefore, transistors are usually manufactured by using GaAs-based or InP-based technologies. 10 In terms of electronic properties, InP has the essence over GaAs Advantages, especially, the combination of InP layer and InGaAs or InAlAs layer allows us to improve electronic mobility. However, facing GaAs technology, the ability to sell components using InP technology is limited Especially in terms of cost, availability, mechanical weakness, and the size of the main substrate (compared to the 6-inch diameter of GaAs, the maximum diameter of InP is generally 4 inches). It seems that a solution to this problem has been found in the InP layer removed from the reference receiving substrate by metamorphic epitaxy of the buffer layer on the GaAs substrate. 20 Then, some removal processes, such as "etch back" The type of process, during the removal process, will cause the remaining parts of the substrate and the buffer layer to be destroyed. In some other removal processes, such as the Smart-cut © process, the substrate can be recycled, but the buffer layer will be lost. However, the deterioration production technology is Complicated. This paper size applies to China National Standard (CNS) A4 (210x297 mm) 200411821 A7

Binding 200411821 A7 B7 V. Description of the invention It includes: (a) bonding the donor wafer to the receiving substrate; (b) separating the useful layer bonded to the receiving substrate from the donor wafer, and (c) recovering the donor wafer in accordance with the recycling method. 5 According to a third embodiment, the present invention provides a method for periodically removing useful layers from a donor wafer, which is characterized in that it includes several steps for removing useful layers, and each of these steps follows the removal method. According to a fourth aspect, the present invention provides the periodic removal method or an application of the removal method to generate a structure including a receiving substrate and a ten-layer, the useful layer includes at least one of the following materials: SiGe, strained Si , Ge, and alloys belonging to the mv group, which are compositions selected from possible combinations (eight 1, 0 &, 111) to (> ^, eight 8), respectively. According to the fifth spirit application aspect, the present invention provides a 15-round donor crystal which is provided with a useful layer by removal and which can be recovered in accordance with the recovery method, and is characterized in that it sequentially comprises a substrate and a buffer structure. A residue. Other implementation forms, purposes, and advantages of the invention printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economics will be obtained by reading the operation of its preferred methods, and providing the following detailed descriptions provided by non-limiting examples and with reference to the accompanying drawings Clearer. [Embodiment] The main purpose of the present invention is to recover a wafer containing a buffer structure (that is, any structure that acts as a buffer layer) after at least one useful layer has been removed from the wafer, so as to make this useful The layer is integrated into the semiconductor structure. 7- This paper size applies the Chinese National Standard (CNS) A4 specification (21 × χ297 mm). 200411821 A7 B7. 5. Description of the invention (in the 6th process, the recycling includes at least partial restoration of the buffer structure. It cannot be reused in subsequent removals. Therefore, the recycling process must include appropriate processing that does not damage at least a portion of the buffer structure. 5 Indeed, buffer structures often include, for example, crystallographic default ), When it is supplied with energy, it can grow and increase the size in an important way. This energy can be provided by heat treatment, chemical process or mechanical process. For example, if at 350 ° C, 450 ° C or 55CTC When the 10 SiGe buffer structure is heated at a temperature, the structure state will change relative to the selected temperature (see, for example, the work of Re et al. Literature "Structural characterisation and stability of Sil-xGex / Si (100) heterostructures grown by molecular beam 15 epitaxy" (July 2001, Journal of Crystal Growth, Volumes 227-228, pp. 749-755). As the temperature increases, the cushioning structure will tend to relax by using sliding surfaces, stacking defects, or other structural relaxation patterns. They are used to reduce their internal stresses. This will cause some difficulties in the interface with the useful layer to be formed in the future. It is then important to maintain these internal stresses in the buffer structure. Recycling is achieved in a way that is suitable for recycling. It can avoid and limit the extension of these crystal stresses inside the buffer structure. These stresses will damage its characteristics and thus the characteristics of the useful layers formed on it. Applicable to China National Standard (CNS) A4 specification (210x297 mm) bound by the Intellectual Property Bureau of the Ministry of Economic Affairs, printed by employee consumer cooperatives 200411821 A7 B7 5 Description of the invention (7) It is advantageous that it has a crystalline structure that is substantially unnoticeable and / or the number of structural defects on the surface is not noticeable. In this document, "the buffer layer," has been changed as described above. It is widely defined. The advantage is that the buffer layer is included in the buffer structure and has at least one of the following two functions: 1. Reduce the defect density in the upper layer; 2. Make one of the two crystal structures The lattice parameters match different lattice parameters. The first function of the buffer layer is that the buffer layer is an interlayer between 10 between two structures, and the buffer layer has, on one of its surfaces, a first layer having substantially the same lattice parameters as the first structure. A lattice parameter, and has a second lattice parameter around its other surface that is substantially the same as the lattice parameter of the second configuration. In the remainder of this document, the buffer layer or construction described 15 will generally follow this latter buffer layer. However, the invention also relates to any cushioning layer or any cushioning structure defined in the most general way in this document. Printed by the Consumers' Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs again, an example of a method according to the present invention will be described below, which includes recovering a donor wafer of a useful layer by removal. The donor wafer 20 is initially composed of a support substrate and Composed of buffer structures. Referring to FIG. 1, a donor wafer 10 (by removing a thin layer of the donor) included in the known conventional technique is composed of a support substrate 丨 and a buffer structure I. ° The application of this donor wafer 10 in the present invention is from the buffer -9- this paper size applies the Zhongguan Family Standard (CNS) M specification (training tears) 200411821-A7 __ B7 V. Description of the invention ( Part 4 of structure I and / or at least a part of the upper cover layer (ovedayer) formed on the surface of the buffer structure I (not shown in figure i) removes the application of the useful layer in order to integrate it into, for example, the S0i structure In the structure. The support substrate 1 of the donor wafer 10 includes at least one semiconductor layer having a first crystal 5 lattice parameter, which is located at the interface between the support substrate 1 and the buffer structure I. In a special group, the 'support substrate 1 is composed of The first lattice parameter is composed of a single semiconductor. In the first configuration of the buffer structure I, the buffer structure J is composed of the buffer layer 10. In this case, the buffer layer 2 on the support substrate 1 makes A second lattice parameter that is substantially different from the first lattice parameter of the substrate 1 may appear on its surface, so that there may be two layers 1 and 4 on the same donor wafer 1, which have different crystals. Grid parameters. 15 In some applications, the "buffer layer 2" may make it possible for the upper ^ coating layer to avoid the inclusion of high defect densities and / or be exposed to visible forces. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs In some applications, the buffer layer 2 may make it possible for the upper cover layer 1 to have a good surface condition. ^ 20 In general, the buffer layer 2 has a gradual change in thickness with the thickness, so as to establish The transition between the two crystal parameters. This layer is generally called the metamorphic layer. This gradual change in the lattice parameter may occur continuously within the thickness of the buffer layer 2 ^ ^ ^ moxibustion thickness. -10- This paper size applies China National Standard (CNS) A4 (210x297 mm) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs

For example, a composition with a variable rate or a discontinuous jump in the composition 200411821 V. Description of the invention, or it can be divided into `` stages '', each stage is-thin layer has a different The lattice parameter of the lower layer is substantially fixed, and the moon parameter changes the lattice number one by one. ^ 5 It can also have variations in more complex forms, with the sign of the rate inverting and rising. It is preferable to find the change of the lattice parameter in the buffer layer 10 in a gradual manner starting from the substrate 1 by adding at least the atomic element. Which is not contained in the substrate 1. Therefore, for example, the buffer layer 2 generated on the substrate 1 composed of a single material may be composed of a binary, ternary, quaternary, or higher material. Therefore, for example, the buffer layer 2 generated on the substrate 15 1 composed of a binary material may be composed of a ternary, quaternary, or higher material. The buffer layer 2 is preferably a known technique such as CVD and MBE techniques (abbreviations of “Chemical Vapour Deposition” and “Molecular Beam Epitaxy”, respectively). 20 The support substrate 1 is grown (for example, by epitaxy). In general, the buffer layer 2 may be produced by any other known method in order to obtain the buffer layer 2 composed of, for example, an alloy of various atomic elements. Secondary steps for trimming the surface of the substrate 1 under the buffer layer 2 (嬖 -11- This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm)

200411821 A7 B7, if polished by CMP), may occur before the buffer layer 2 is manufactured. '5 15 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 20 In the second configuration of the buffer structure I, and referring to FIG. 1, the buffer structure I is composed of a buffer layer 2 (essentially the buffer of the first configuration) The same layer) is composed of an additional layer 4. The additional layer 4 may be between the substrate 1 and the buffer layer 2, or on the buffer layer 2, as shown in FIG. In the first special case, such an additional layer 4 may constitute a second buffer layer, for example, a buffer layer which makes it possible to limit defects and thereby improve the crystal quality of one layer generated on the buffer structure 1. This additional layer 4 is composed of a semiconductor preferably having a fixed material composition. Then, "the choice of the composition and thickness of the buffer layer 4 to be produced" is an especially important criterion for achieving such characteristics. So, for example, the structural defects in the epitaxial growth layer usually decrease gradually within the thickness of this layer. In the second special case, the additional layer 4 is located on the buffer layer 2 and acts as a layer above the buffer layer 2. It can therefore fix the second lattice parameter. In a third special case, the additional layer 4 is located on the buffer layer 2 and plays a role in the removal action to be implemented in the donor wafer 10, such as the removal of its level. Additional layers can also have several functions, such as those selected from the last three special cases. -12- This paper size applies to China National Standard (CNS) A4 (210x297 public love) 200411821

In an advantageous configuration, μ ,, θ ^ additional layer 4 is located in the buffer layer 2 lattice parameter. — ^ ^ In the special case of the configuration of the second crystal with different parameters, the additional layer 4 is composed of a material loosened by the punching layer and has a second crystal lattice. The additional layer 4 is preferably a CVD <# MBE, which is generated by growing on the buffer layer 2 (for example, by epitaxial growth). 10 15 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. 20 In the first embodiment, the growth of the additional layer 4 is in place, directly extended, and the formation of the buffer layer 2 below it is realized. In this case, the The buffer layer 2 is also preferably formed by layer growth. In the second embodiment, the growth of the additional layer 4 is achieved after a minor step of trimming the surface of the underlying buffer layer 2 (for example, by satin polishing 'heat treatment or other planarization techniques) to be included in the buffer layer 2 The misalignment and other defects will not grow, will not increase in size, and will not create any sliding surfaces, stacking defects, or other defects that will reduce the quality of the final buffer structure I formed thereby. The removal of the useful layer from the donor wafer 10 operates according to one of the following main modes: (1) The useful layer to be removed is part of the additional layer 4. (2) The useful layer to be removed is part of the upper cover layer (not shown in the drawing), which may have been previously buffered, for example by epitaxial growth, before trimming the surface of the buffer structure j. Formation on Structure I. Next, the donor wafer 10 is used as a base for the growth of the upper cover layer. -13 · This paper size applies the Chinese National Standard (CNS) A4 specification (210x297 mm) 200411821-A7

board. Depending on the removal mode used by / Monthview, the upper cover layer may contain one or more thin layers. Furthermore, it is preferably a lattice parameter having substantially the same lattice parameter as that of the relaxed material of the free surface 5 of the cushion structure I, such as a layer of the same material, or a crystal structure that will have its tensile or compressive strain All or some of the other materials, or a combination of these two types of materials. In a particular embodiment of the donor wafer 10, one or more interlayers are further interposed between the buffer structure J and the upper cover layer. In this case, 'this or these layers will not be removed. (3) The useful layers to be removed are part of an additional layer * and an upper cover layer (formed in the same manner as described on the κ shell and in the second removal mode). Regardless of the selected removal mode, and referring to FIG. 2, after the removal 15 and in most cases, the “protruding portion” and / or the rough seam portion 7 b will appear on the removal surface of the remaining donor wafer 10. This removal surface, obviously, belongs to the layer 7 after removal above the buffer layer 2. The Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints the removal pattern 20 selected from the two removal patterns previously discussed. The layer 7 after this removal is all or some of the layer 4, which may be one or more. Interlayer 'and may be part of the overlying overlay. The part obviously appearing on the surface of layer 7 after removal is the same as 7b, depending on the removal mode and the technology operated during the removal. -14-200411821 V. Description of the invention (η). • Therefore, for example, the removal mode 5 10 15 20 currently used in the "Seal" industry is not to remove the useful layer on the entire surface of the donor wafer 10, and only to remove a part of the donor wafer 10 (usually essentially Upper central portion: the useful layer above, leaving behind, for example, those protruding portions on the surface of the donor wafer 10 indicated by the reference symbol π 2. This: the protrusions; the points are usually complete and located on the surface of the donor wafer 10 Around, then, all the protrusions are commercially known as " excision rings ". So 'for example, known extraction techniques, such as those we will study further and later here Techniques in the literature (for example, Z Smart-cut ◎ technology has been mentioned) sometimes lead to, for example, removing the surface roughness indicated by the reference symbol 7b on the surface. Once the removal is performed, the recovery according to the present invention is operated for restoration Donor wafer 10. The first step of recycling according to the present invention is to remove at least the uneven portions 7a and 7b (shown in Fig. 2). The removal of such a substance according to the present invention is performed in this way So that after removal, at least a portion of the buffer structure I will remain, which can be reused during subsequent removal of the new useful layer. After the material is removed, the remaining portion of the buffer structure I is therefore recovered 'instead Like the known recycling of conventional technology. In a special case of recycling brother, and regarding the second mode (2) of the removal, it is more advantageous to choose the thickness of the upper cover layer, so that after the removal, the Residual part (for the removed layer is removed by -15- This paper size applies Chinese National Standard (CNS) A4 regulations (210 X 297 public love) 200411821 A7 B7 V. Description of the invention (14 substance standard machinery (Such as polishing or CMP) without removing the substance from the safe buffer structure I so as to retain the entire buffer structure I. Even if the current development can smoothly reach a thickness of about 1 # m, borrowing during the recovery period The thickness of the material removed by standard mechanical means (such as polishing) is generally about 2 // m. 10 15 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 20 The second special situation in recycling In this case, and regarding the second mode (2) of the removal, it is more advantageous to select the thickness of the upper cover layer and the additional layer 4, so that after the removal, the remaining portion of the upper cover layer (for the layer 7 after removal) and At least a part of the additional layer 4 is removed by standard mechanical means (such as polishing means or CMP) for removing the substance, without removing the substance from the safe buffer layer 2, so that the entire buffer layer 2 is retained. The removal includes the operation using mechanical means to invade the name (such as light removal or grinding). The polishing technique generally used is to place the donor plate 10 on a polishing head and a polishing plate that can rotate about a driving shaft. The respective major surfaces of the polishing head and the polishing plate are substantially parallel. The force applied to the polishing head presses the donor wafer 10 against the upper surface of the polishing plate. The rotational movement of the donor wafer 10 with respect to the polishing plate causes friction on one surface of the donor wafer 10, thereby polishing the surface. In a preferred mode, the polishing head accompanied by the donor wafer 10 is moved along a defined path over the upper surface of the polishing plate so as to uniformize the polishing as much as possible. This kind of movement can be, for example, a specific 16-size paper that applies the Chinese National Standard (CNS) A4 specification (210x297 mm) 200411821 A7 B7 V. Description of the invention (15) The translation of the axis back and forth or a spiral movement . The polishing plate is preferably covered with a textured material or fabric. Preferably, a calendering solution may be injected which may lubricate the frictional action of the polishing plate on the applied wafer. 5. Generally, the surface cleaning of the wafer using the injected deionized water can be performed after the light is removed. Post-polishing, typically using an injected solution containing a suitable surfactant, may operate between polishing and cleaning. The main function of the surfactant is to disperse as much as possible the remaining particles on the surface of the 10-piece cut in the rinsing solution, thereby reducing their deposition on the surface and allowing them to be removed. It is preferable to inject more of one of these solutions to wet the fabric of the calender plate so as to distribute the solution over the entire surface of the donor crystal circle 10 as much as possible. 15 In the first embodiment of the pepper-light board, the functions of removing, rinsing, and cleaning these boards are performed by a single board. However, in order to improve the productivity of the entire method, a device with several plates would be preferred. Printed in the second embodiment of these boards by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, the polishing function is achieved by polishing a 20 plate, and the rinse and cleaning functions are performed by a single plate called a rinse / clean plate And achieve. This embodiment separates polishing from rinsing / cleaning by improving the quality of the rinsing by using a plate for rinsing which has absolutely no possibility of any particle residue remaining on the plate. In the third embodiment of these plates, the polishing plate, the washing plate and the cleaning -17-This paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 200411821 A7 B7 V. Description of the invention (w plate system This is a separate plate. Compared with the second embodiment, this embodiment separates cleaning and rinsing, and improves the surface of the slice by using a plate for cleaning that has no particle residue that may adhere to the rinsing plate at all. Final cleanliness. In addition to polishing, it may be necessary to add abrasive particles such as silica particles in order to improve the abrasion of the substance. In addition to polishing, it may be necessary to add chemicals to chemically etch along with mechanical invasion of money through the operation of polishing plates. In an advantageous mode of operation for removing material from the donor wafer 10, chemical mechanical planarization, also known as CMP, is performed on the principle that the polishing surface of the polishing plate is mixed with a polishing fluid containing abrasive particles and a chemical etchant. In addition to mechanical polishing, the polishing fluid is then used in combination with chemical etching of the surface of the donor wafer 10 to be polished (by using Etchant) and mechanical erosion (using abrasive particles). Here again, the washing and / or cleaning of the polished surface of the donor wafer 10 may be followed by the removal of the substance. Σ should be aware that washing may be in some cases It is effective not only for the faster removal of residues and abrasive particles printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Polishing Economy, but also for the chemical action of polishing 20. This is because if the chemical etchant used during polishing has For alkaline pH, the chemical action of the polishing solution can be stopped quickly by adding a general acidic surfactant to the polishing solution. For some semiconductors such as silicon, chemical action is better than mechanical action. Paper size applies Chinese National Standard (CNS) A4 specification (210x297 public love) 200411821. A7 V. Description of invention (when polishing small surface of this semiconductor, use abrasive particles). Especially for the mentioned in the previous paragraph In terms of materials, this rinsing with an acidic surfactant may therefore significantly stop the polishing effect and control its effect on the section. The thickness after polishing is therefore guaranteed and is 5 and renewable. Therefore, it is possible to control the stop of polishing and thus more accurately control the thickness of removal. 10 Furthermore, a gradual injection of the rinse solution will be better: too fast The injection results in a rapid decrease in the pH of the polishing solution and, in the case of some semiconductors such as silicon, may have increased the size of the abrasive particles due to agglomeration, thus exposing them to the agglomeration of these larger particles. Consequences of grinding damage. An example of the application of the flattening layer provided here is when at least a part of the layer to be planarized contains stone. 15 The solution suitable for polishing silicon is generally between 7 and 10%. PH of alkaline solution, preferably between 8 and 10, then the chemical agent preferably has a nitrogen-containing nitrogen-based test base (nitrogen_c〇ntaining base) ° Intellectual Property Bureau of the Ministry of Economic Affairs The 20 abrasive particles printed by the Employee Consumer Cooperative are preferably silica molecules having a size of about one tenth of a micron. If it is decided to rinse, a surfactant with a pH value preferably between 3 and 5 'or even around 4 will be used, which has a CMC (Critical Micellar Concentration) of at least 0.1% ) 〇19- • This paper size applies to China National Standard (CNS) A4 specification (210x297 public love) 200411821 A7 B7

The time of the rinsing step will preferably be about 50% of the polishing time. Mechanical or chemical-mechanical means, within the scope of the present invention, are particularly advantageous for controlling the amount of removed material, as they can allow at least part of the buffer structure 1 to be retained. 5 In general, however, removing material from a donor wafer can include all mechanical means of manipulating the invading substance, such as grinding or bombardment with atomic material. A heat treatment may take place before the removal of this substance, and the heat treatment may further smooth the surface to be removed and / or remove the convex part 7a or the rough part 7b. For example, a heat treatment may be performed as disclosed in the document US 6,596,61, where the convex portion and the rough portion 7b are removed by heat treatment. This technology is more advantageous in the case of removing the upper cover layer that has occurred on the buffer structure. It can make this heat treatment 15 mainly work on this upper cover layer, rather than on the buffer structure worker, to protect the buffer. Construction I is free from increasing internal defects. Therefore, one of the following substance removal modes is used: printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs (a) removal of a portion of layer 7 containing at least bumpy partialization and 7b removal; or 20 (b) removal The whole removed layer 7; or (0 removes a part of the entire removed layer 7 and the buffer layer 2. If the removed layer 7 includes a part of the original upper cover layer, the substance removal mode (a) is preferably Including the complete removal of this upper cover.

This paper size applies the Chinese National Standard (CNS) A4 specification (210x297 public love) 200411821 ′ A7 Description of the invention (19 Refer to Figure 3, one of the original buffer structure after the material is removed is indicated by the reference symbol Γ. It contains: • The entire original buffer structure, when using the material removal mode (a) and the field material removal mode (a) does not involve removing any part of the additional layer 4; or, part of the buffer layer 2 and the additional layer 4, When using substance removal mode (a) and when substance removal mode (a) involves removing a part of additional layer 4; or • buffer layer 2, when using substance removal mode (b); or-of buffer layer 2 Partly, when using the substance removal mode (c). After the first recovery step regarding substance removal, the second recovery step includes reforming at least some of the layers that were removed during the first step. 15 Ministry of Economy Wisdom Printed by the property bureau employee consumer cooperative 20 First, in some cases, it may be better to trim the surface of the donor wafer 10, the surface of the donor wafer 10 is a material removal process that operates during the first recovery step Where it does not exist, it can remove any roughness that may have appeared during material removal. For this purpose, for example, heat treatment will be used so that the misalignment and other defects contained in the buffer structure I do not grow, Increases size and does not create any sliding surfaces or stacking defects, as already discussed. Then, when a portion of the original buffer structure I is removed during the first recovery step, this second step involves removing the remaining buffer structure Γ Reduction of the buffer structure I. Once the reduction of the buffer structure I is formed, it is preferable to be able to make the actual -21- This paper size applies to the Chinese National Standard (CNS) A4 specification (210x297 mm)

It is qualitatively the same as the original buffer structure I. ; ,,;, and in a particular embodiment, it may be possible to slightly change certain production parameters in order to obtain a buffer structure I slightly different from the original. For example, a will slightly change the concentration of certain compounds in the material. Reducing the buffer structure I involves reforming the removed portion of the buffer layer 2 when a portion of the original buffer layer 2 is cut off during the first recovery step. The reduction buffer structure I involves reforming all or part of the additional layer 4 when all or part of the original additional layer 4 is cut off during the first recovery step. In this case, it is possible to produce an additional layer 4 having a thickness substantially the same as or substantially different from the original. Once the buffer structure I is restored, the upper cover layer may be formed on the upper cover layer which will at least partially contain the new 15 useful layers to be removed, and may be included between the buffer structure I and the upper cover layer. One or more interlayers. The layers that may be formed during this second recovery step are preferably produced by layer growth (such as by CVD or MBE epitaxial growth) on their respective underlying layers. In the first case, at least one of these layers I and 5 is grown in situ and directly continues to form the growth support of the lower layer. In this case, the growth support of the lower layer is also preferably formed by layer growth. In the second case, at least one of these layers is a secondary step in trimming the surface of the underlying growth support (for example, by CMP polishing, heat treatment-22- This paper size applies Chinese National Standard (CNS) A4 specifications (210 X 297 (Mm) 200411821 A7 B7 V. Description of the invention 21 5 10 15 Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperative Printed 20 or other leveling technology), so that the misalignment and other defects contained in the buffer structure I will not increase , Will not increase the size and will not create any sliding surface, stacking defects or other defects that will reduce the quality of the buffer structure. Therefore, in addition to the modifications expected and realized by those skilled in the art, a donor wafer i 0 that is substantially the same as the original is obtained, that is, the donor wafer 10 shown in FIG. 1. The donor wafer 10 obtained in this way contains at least a portion of the original buffer structure J, and thus at least a portion of the original buffer layer 2. This makes it possible to avoid all, long, and expensive reformations as is the case with known recycling methods. may. Consider FIGS. 4a to 4f ′, which show various steps of a method for removing a thin layer from a donor wafer 10 and recovering the donor wafer after removal according to the present invention, which uses layers having substantially the same layers as those described in FIG. I above. The donor wafer 10 having the same one-layer structure is structured, so referring to FIG. 4 a ′, it includes a substrate 1 and a buffer structure I. In this exemplary method according to the present invention, an upper cover layer 5 has been added above the buffer construction work. The removal that will be achieved during this method will be associated with the removal of the upper cover 5 and perhaps part of the buffer structure I. Similarly, in other structural configurations of the donor wafer 10, there may be several upper cover layers, and the removal will then be associated with the upper cover layer and perhaps with a portion of the buffer structure I, or there may be no upper cover layer, and the removal and then Only relevant for one part of the buffer structure I. -23. 200411821 A7 B7 V. Description of the Invention (22) The two layers I and 5 are preferably formed by epitaxial growth (for example, by CVD and MBE) according to known techniques. In the first case, at least one of these layers is in place and directly continues to form the growth support of the lower layer to grow. In this case, the lower layer is formed into 5 long supports and is preferably formed by layer growth. In the second case, at least one of these layers is grown after a minor step of trimming the surface of the underlying growth support (such as by CmP polishing, heat treatment, or other leveling techniques), so that the errors contained in the cushion structure I Placement and other defects will not increase, will not increase the size and will not create any sliding surface, stacking defects or other defects that will reduce the quality of the buffer structure. A method for removing the thin layer is shown in Figures 4b and 4c. The first preferred removal step of the present invention is to establish a fragile zone in the donor wafer so that the fragile zone can perform subsequent separation to separate the desired useful layer from 15. Here are some technologies that can be operated to establish this kind of fragile zone. The first technology printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs is the first technology known as Smart_ cut® technology (also its description It may be found in some literature that covers technology 20 using wafers) 'which lies in its first step' implanting atomic matter (such as hydrogen ions) with a specific energy in order to establish a fragile zone in this way. The second technique consists in forming a fragile interface by creating at least one porous layer, as described in document EP-A-0 849 788, for example. -24- This paper size applies to China National Standard (CNS) A4 (210x297 public love) 200411821

A fragile zone formed according to one of these two technologies is preferably established on the substrate 1:-in the buffer layer of the buffer structure I; or-in the buffer layer and any of the relaxation layers of the buffer structure I Or 5 • in any of the slack layers of the cushioning structure 1; or-between the cushioning structure I and the upper cover layer 5; or-in the upper cover layer 5 if the latter is sufficiently thick; this is constituted by a stack A special case of the composed upper cover 5. Referring to FIG. 4b, the second step for removing a thin layer is to attach the receiving substrate 6 to the surface of the upper cover layer 5. The receiving substrate 6 forms a mechanical support, and the rigidity of the mechanical support is large enough to support the cover layer 5 that is to be removed from the donor wafer 10, and to protect it from any mechanical strain from the outside. The receiving substrate 6 may be made of, for example, silicon or quartz or another type of material. The printed printed circuit board 6 of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is placed in close contact with the upper cover 5 and attached to it for attachment. The molecular adhesive is preferably in the It is applied between the substrate 6 and the upper cover layer 5. This bonding technology, together with the modification, is specifically explained in the title "Semiconductor Wafer Bonding" (Science and Technology 100gy) written by Q γ 20 仄 Gole and Wlley, plus ⑽ Technology ) In the literature. If necessary, the joining is accompanied by appropriate pre-treatment of the individual surfaces to be joined and / or with the supply of thermal energy and / or additional adhesives

This paper size applies the Chinese National Standard (CNS) A4 regulations (210 X 297 public love) 200411821 A7 B7 V. Description of the invention (provided by 20). Therefore, for example, heat treatment applied during or just after joining It is possible to make the bonding connection hard. The bonding can also be controlled by, for example, the bonding layer of Shi Xitu. The bonding layer system 5 is inserted between the upper cover layer 5 and the receiving substrate 6 and has a high polymer bonding ability. The advantage is that The material forming the joint surface of the receiving substrate 6 and / or the material of the joint layer that may be formed is electrically insulated in order to generate the SOI structure from the removed layer. Then, the semiconductor layer of the soi structure is transferred by 10 shifts. Useful layer 5. Once the receiving substrate 6 is bonded, a part of the donor wafer 10 is removed in a pre-formed fragile zone by separating it. 15 In the case of this first technology (Smart-cut®), In the second step, the 'implantation zone (formation of the fragile zone) is subjected to heat and / or mechanical treatment, or other energy supply, in order to facilitate the fragile zone's separation. In the case of this second technique The fragile layer is provided by mechanical processing or other energy to facilitate the fragile layer's separation. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. 20 Based on one of these two technologies, the fragile zone is separated. It is possible to remove most of the wafer 10 in order to obtain a structure that may include the rest of the buffer structure I, the upper cover layer 5, any bonding layer, and the receiving substrate 6. Then, 'preferably, do the removal layer trimming Steps to form a structured surface to remove any surface roughness, uneven thickness and / or thickness by using, for example, chemical mechanical polishing CMP, engraving or heat treatment (CNS) A4 Regulations (210x297 mm) 200441821 Printed by the Employee Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of Inventions (25) A7 B7

Expected layers. The removed layer 7 forms a part of the donor wafer 10 on the removed substrate 丨, and the entire wafer forms a donor wafer 10 'to be transferred for recycling so that it can be re-applied during another layer removal use. The recovery steps are shown in Figures 4d, 4e and 4f. Referring to FIG. 4d, the first recovery step is equivalent to removing a part of the layer 7 after the removal. Mechanical erosion or etching is performed to remove a portion of the removed layer 7, according to one of the mechanical or chemical mechanisms already discussed above. Especially if the removed layer 7 contains several different original layers (for example, a part of the upper cover layer 5 and a part of the buffer structure), various mechanical means can also be used to remove the material. Several techniques, such as the erosion achieved by CMP and the polishing achieved by pure 15 can be connected to each other. The mechanical attack of this substance may occur before and / or after surface treatment (such as chemical etching, heat treatment or leveling techniques) so that the misalignment and other defects contained in the cushioning structure I do not grow, do not increase in size and do not Will create any sliding surfaces, stacking defects, or other defects that degrade the quality of the buffer structure. In all cases, and referring to Figure 4d at the end of this first recovery step, at least a portion of the buffer structure I 'will remain. Referring to Figs. 4e and 4f, the second recovery step is equivalent to recovering by any lost portion and the upper cover layer 5 respectively forming the buffer structure I.

-27-

200411821, A7 _ B7 V. Description of the invention (26) The layers are substantially the same as those that existed before the removal. These layers are preferably reduced by forming a layer based on a technique (substantially the same as one of these techniques). In the first case, at least one of these layers is in situ, and the growth of the lower layer growth support is continued directly. In this case, the lower layer growth support is also preferably formed by layer growth. In the second case, at least one of these four layers is grown after a minor step of trimming the surface of the underlying growth support (such as by CMP polishing, heat treatment, or other planarization techniques) to be included in the buffer structure I The 10 misalignment and other defects will not grow, will not increase in size and will not create any sliding surfaces, stacking defects or other will reduce the cushion structure! Defects in quality. The donor wafer 10 " does not need to be the same as the layers I and 5 of the donor wafer 10. The donor wafer shown in Figure 4d may be used as a substrate for other types of layers. After the donor wafer 10 is recovered in accordance with the present invention, a method of removing a useful layer may be performed next.

Therefore, in the advantageous context of the present invention, the cyclic method of removing useful layers from the donor wafer 10 according to the present invention operates by making the following 20 items to be successfully completed with each other repeatedly: • a removal mode; and • basis A recycling method of the present invention. Before operating the cyclic removal method, it may be operated according to the present invention using one or more of the above-mentioned techniques for generating a thin layer on a substrate. -28- This paper size applies the Chinese National Standard (CNS) A4 Regulation (210 X 297) Public love) 200411821

A method of generating a donor wafer 10. In the remainder of this document, 'we provide several examples of the configuration of the donor wafer 10 which contains the buffer structure I and which can be operated by the method according to the invention. 5 They will provide several materials that can be advantageously used for such donor wafers. As we can see, the buffer structure I with the first lattice parameter produced on the substrate 1 has the main function of having the second% lattice parameter on its free surface most of the time. 10 Then, a suitable buffer structure 1 contains a buffer layer 2 which may produce such matched lattice parameters. The technique used to obtain the buffer layer 2 with such characteristics is to use a buffer layer 2 composed of several atomic elements, which includes: • at least one atomic element, which will be in the composition of the substrate 1; With 15 and • at least one atomic element, it has no or very little concentration in the substrate 1 that gradually changes within the thickness of the buffer layer 2. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs The progressive concentration of this element in buffer layer 2 will be the main reason for the gradual change of the lattice parameters in buffer layer 2 in a deteriorating manner. Therefore, in this configuration, the buffer layer 2 will be mainly an alloy. The atomic element selected for the composition of the substrate 1 and for the buffer layer 2 may belong to Group IV, such as Si or Ge. For example, in this case, it may have a base composed of Si-29- This paper size applies the Chinese National Standard (CNS) A4 specification (21 × X 297 mm) 200411821 • A7 ------- ----- B7_ 5. Description of the invention ^ ^ ------ Board! And the buffer layer 2 composed of SlGe, where the & concentration changes gradually with a thickness between a value located near G to the interface of the substrate 1 and a specific value on the other side of the buffer layer 2. In another solution, the composition of the substrate 1 and the buffer layer 2 includes an alloy of Group 5 III-V, for example, a possible combination (eight 丨 ⑸ ^ ^ ... upper eight ^ combination. The buffer layer 2 is preferably made of a ternary type Or higher alloy. For example, in this case, there may be a substrate 1 made of AsGa and a buffer layer 10 containing As and / or Ga and at least one other element, the at least one other element It changes gradually with the thickness between a value close to 0 on the interface of the substrate i and a specific value on the other side of the buffer layer 2. The composition of the substrate 1 and the buffer layer 2 may include atomic elements of the ipVI group Yes, for example possible (redundant 11, € (1)-(8,8 €, Ding €) combinations. 15 Below, we provide some examples of this configuration: Example 1: After recycling, the donor wafer 1 〇 contains :-A substrate 1, composed of Si; printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs-a buffer structure I, composed of SiGe, with a buffer layer 2 and an additional layer 4; 20 · a removed Layer 7, consisting of Si or SiGe, which covers part of the cover layer 5 above The rest of the upper cover layer 5 is then formed. These donor wafers 10 are used in particular when removing layers of SiGe and / or strained Si in order to produce SGOI, SOI or Si / SGOI structures. -30- This paper size applies to Chinese national standards (CNS) A4 specification (210x297 mm) 200411821 A7 B7 V. Description of the invention (29 Buffer layer 2 preferably has a Ge concentration that gradually increases from the interface with the substrate 1 'in order to change the SiGe lattice parameter as described above. Thickness It is generally between 1 and 3 // m to facilitate good structural relaxation of the surface and contain defects related to differences in lattice parameters, which cannot be hidden. The additional layer 4 is due to the buffer layer 2. It is composed of relaxed siGe, where the Ge concentration is preferably uniform and substantially equal to the Ge concentration of the buffer layer 2 near their interface. The germanium concentration in the silicon in the SiGe additional layer 4 is generally 15 /. And 30%. This limit of 30% indicates the general limitation of the current technology, but it may change in the next few years. The additional layer 4 has a thickness that can vary greatly depending on the situation, and the general thickness is between 0.5 and Between 1 micron 15 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 20 Example 2: After recycling, the donor wafer includes:-a Si substrate 1;-has a SiGe buffer layer 2 and an additional layer of substantially relaxed Ge 4 A buffer structure I;-a removed AsGa layer 7, which forms the rest of the upper cover layer 5 after removing a portion of the upper cover layer 5. The buffer layer 2 preferably has a gradual increase from the interface with the substrate 1. Ge concentration 'in order to change the lattice parameter between the lattice parameter of the si substrate 1 and the lattice parameter of the Ge additional layer 4. For this purpose, in the buffer layer 2, the concentration is made from -31- This paper size applies the Chinese National Standard (CNS) A4 specification (210x297 mm) 200411821 A7 B7 V. Description of the invention (30) About 0 to About 100%, or more precisely 98%, so that the theoretical lattices of the two materials are exactly the same. Example 3: After recovery, the donor wafer 10 includes: a substrate 1, including at least 5 AsGa portions at its interface with the buffer structure I;-a buffer structure I made of III-V material; _ after removal The layer 7 contains mv material, which constitutes the rest of the upper cover layer 5 after removing a part of the upper cover layer 5. 10 The main benefit of this cushioning structure I is to make the lattice parameter (the nominal value of which is about 5.87 Angstroms) of the material V of the upper cover layer 5 and

The lattice parameters of AsGa materials (the nominal value of which is approximately 乂 ") are matched. 15 In overall III-V materials, and by comparing overall Inp with overall AsGa, AsGa is less expensive and can be used in the semiconductor market. More widely available and less vulnerable, it is a more well-known material using back contact technology 'and its size can reach a high value (for the overall ^, generally 6 pairs instead of 4 忖). Economy The Intellectual Property Bureau employee consumer cooperative printed a special configuration of the donor wafer 10 before removal. The upper cover 5 before removal contains the Inp to be removed. 20 Because the overall InP has a size that is roughly limited to 4 slaves, Therefore, the donor wafer 10 provides, for example, a solution for manufacturing an inP layer with a ruler + table and a size of 6 inches. The buffer structure used to produce this upper cover layer! Needs-generally greater than! Micron thickness, especially if it can The -32- I paper size recycled according to the present invention is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 ^ 57 200411821 '· A7

^ It will be made to change towards larger thicknesses. The epitaxial growth technique that normally breaks the operation to produce such a buffer structure I is also particularly difficult and expensive, so it is advantageous for it to be able to recover at least partially after removing the useful layer. 5 Advantageously, the buffer structure I includes a buffer layer 2 'composed of InGaAs, wherein the In concentration is changed between 0 and about 53%. The buffer structure I may further include an additional layer 4 composed of a III · v material such as InGaAs or InAlAs, and the III-V material has a substantially constant concentration of atomic elements. 10 In a special removal situation, part of the cover layer 5 and the additional layer 4 above the InP will be removed in order to transfer it to the receiving substrate. So 'will likely benefit from any electrical or electronic properties that exist between the two removed materials. The situation is, for example, if part 15 of the additional layer 4 that is removed is composed of InGaAs or InAlAs: the discontinuity of the electronic frequency band between the InAlAs material and InP will establish an improvement in the removed layer Electronic mobility. The donor wafer 10 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs may contain other configurations of other III-V compounds (such as InAlAs, etc.). 20 The general application of this layer removal is the production of HEMT or HBT (respectively "high electron mobility transistor" and "heterojunction bipolar transistor"). In the semiconductor layer proposed in this document, it may be added Other ingredients are added to these semiconductor layers, for example, the layer in question has a carbon concentration of substantially less than or equal to 50% or especially has a carbon concentration of less than or equal to 5% -3 3-This paper size applies to China National Standard (CNS) A4 specifications (210 X 297 mm) 200411821 A7 B7 5 10 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (32 carbon concentration. = Houyi invention is not limited to the materials provided in the above examples, The buffer structure is composed of the intermediate layer 8 or the upper cover layer 5, but also extends to other types of alloys (IV_IV, m_v, n_vi types). It should be particularly noted that these alloys can be binary, ternary, Quaternary or higher grade materials. The present invention is not limited to a recyclable buffer layer 2 having the main function of matching the majority / different lattice parameters between two adjacent structures. The buffer structure IM also refers to any buffer layer 2 or buffer structure I that is defined in the most common way in this document and can be recycled according to the present invention. The structure finally obtained after extraction is not limited to the SGOI or SOI structure. This paper size applies the Chinese National Standard (CNS) A4 regulations (21〇χ 297 mm) 200411821 V. Description of the invention

ίο 15 [Schematic description] FIG. 1 shows a donor wafer according to a conventional technique. Figure 2 shows the donor wafer after removal. FIG. 3 shows the donor wafer after the first recovery step. Figure 4 shows the various steps of the method according to the invention, the sequence of which includes removing a thin layer from a donor wafer, and recovering the removed wafer. "Description of the code of the drawing pattern ~ buffer structure 1 ~ substrate 2 '~ lower 4' ~ upper 6 ~ receiving substrate P ~ remaining portion of the buffer structure 2 ~ buffer layer 4 ~ additional layer 5 ~ upper cover layer 7 ~ removal Layer 7 'after removal ~ Layer 7a after removal ~ Raised portion 7b ~ Rough portion 10, 10, 10, ~ ~ Donor wafers Intellectual Property Bureau of the Ministry of Economic Affairs Employee Consumer Cooperatives Printed on this paper Standards apply Chinese National Standards (CNS) A4 size (210 x 297 cm)

Claims (1)

200411821 6. Scope of patent application [Scope of patent application] 1. A method for recovering a donor wafer (10) after removing at least one useful layer of a material selected from a semiconductor material, the donor wafer (10) sequentially including a substrate (1), a buffer structure (1), and a useful layer before removal, the method includes removing the material on the side of the donor wafer (10) where the removal is performed, characterized in that the removal of the material includes using By mechanical means, at least a part of the buffer structure (I) will remain after the material is removed, and at least a part of the buffer structure (Γ) can be reused as a buffer structure during subsequent useful layer removal. 2. The method of recovering donor wafers (10) as described in item 丨 of the declared patent scope ', which is characterized by ^: the operation of mechanical means when removing material from spears includes withdrawal of light. 3. The method of recovering the donor wafer as described in one of items 1 to 2 of the declared patent scope, characterized in that the operation of the mechanical means when the substance is removed includes grinding and polishing. The method of recovering donor wafers (10) described in item 3 of the patent claim is characterized in that the operation of mechanical means when removing a substance is accompanied by chemical etching. 5 ♦ The method of recovering donor wafers (1G) as described in the items 1 to 4 of the scope of patent application, characterized in that the operation of the mechanical means when the substance is removed includes chemical mechanical planarization. 6 'The method of recovering the donor wafer (10) as described in items 1 to 5 of the scope of patent application' is characterized in that the operation of the mechanical means is performed before and / or after the surface leveling treatment. -36-This paper size is suitable for financial use X 297 public love 200411821 6. Application for patents A8 B8 C8 D8 10 15 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy 20 parties, 7. As described in item 6 of the scope of patent application The human method for recovering donor wafers (10) is characterized in that the surface leveling process includes a heat treatment so that the misalignment and other defects enclosed in the buffer structure will not increase, will not increase, and will not be established. Some sliding surfaces, stacking defects, or other defects that degrade the quality of the cushion structure (I). 8 · The recovery method according to one of the items No. 丨 to 7 of the scope of patent application, characterized in that: before removal, the buffer structure (I) includes a buffer layer (2) and an additional layer ⑷, The layer has: • a thickness large enough to limit the defect; and / or a surface lattice parameter with a different lattice parameter of the substrate (1). 7, 9 · The recycling method described in item 8 of the scope of patent application, characterized in that the donor wafer (10) includes: a substrate (1) composed of Si; a left buffer structure ⑴, including a Sii_xGex buffer layer (2), the concentration of Ge x the thickness of the tunnel increases between 0 and a y value, and one of the SiwGey layers (4) is relaxed by the buffer layer (2). 10. The recovery method according to one of items 1 to 9 of the scope of patent application ', characterized in that the removal of the substance includes the removal of a part of the buffer structure (I) remaining after the removal. U. The recovery method as described in items 8 and 10 of the scope of patent application, characterized in that the removal of the substance includes the removal of at least a part of the additional layer (4) remaining after removal. 12. Recycling method as described in item 8 and 10 of the scope of patent application, -37- 297 mm) 2004200421 Shenyan patent scope A8B8C8D8 5 10 15 20 One feature is the removal of the substance including the removal of a part of the buffer layer (2). The recycling method as described in one of the items 1 to 12 of the Shenyan patent scope, characterized in that before the removal, the donor wafer (10) includes an upper cover layer (5), and the upper cover layer (5) The layer (5) contains the to-be-removed organic materials to be removed, including the removal of the remaining upper cover layer (5) after removal. 14. The recycling method as described in item 13 of the patent scope of Shenyan, characterized in that the thickness of the upper cover layer (5) has been selected, and after removal, the standard such as polishing means to remove substances can be used Mechanical means can operate on this upper cover ⑺ during material removal without removing material from the buffer structure ⑴. The recovery method as described in the claims 8 and 6 of the patent scope, characterized in that the thickness of the upper cover layer (5) and the thickness of the additional layer (4) have been selected '俾 can be used after removing the material to remove the substance Standard mechanical means, such as light removal means, can operate on this upper cover layer (5) and on k additional layers 附加 during the removal of the substance without removing the substance from the buffer layer (2). 16. The method for recycling according to one of claims 13 to 15 in the scope of patent application, the recovery method described in item 9 of the patent scope, characterized in that the upper cladding layer (5) contains siGe and / or strain si. η · The recovery method as described in item 13 of the scope of application patents in combination with item 9 of the scope of application patents, characterized in that: y = 1; and the upper cover layer (5) contains AsGa and / or, AAs described in any of the items 1 to 17 of the scope of patent application--38-This paper size is applicable to China National Standard (CNS) A4 (210 X 297 public love) 200411821 6. The scope of patent application is A8 B8 C8 D8. The receiving method is characterized in that it further comprises a step of removing a substance from the donor wafer (10), and forming a layer on the side of the donor wafer (10) where the material is removed, so that the donor wafer (10) can be generated again. ) 'S steps. 19. The recovery method as described in one of the 18th scope of the patent application and the 0-12th scope of the patent scope, characterized in that the residual portion of the formation layer V-burst 3 in the buffer structure (Γ) The operation of forming a new part of the buffer structure (1) above. 20. The recovery method as described in one of the 18th and 19th in the scope of patent application and 10th in the 13th and 15th scope of patent application, characterized in that the step of forming a layer is included on the donor wafer The action of forming the upper cover layer (5) can form at least one new useful layer to be subsequently removed. 21. As described in one of the items 18 to 20 of the scope of the patent application, the 15 = receiving method is characterized in that the aforementioned layer is formed by crystal growth during the step of forming the layer. 22. The collection method according to one of the items in the scope of application for patents} to 21, characterized in that the donor wafer (10) contains at least one sound, and the consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs has printed at least one layer and more Carbon in this layer having a carbon concentration of substantially less than or equal to 50%. 20 23. The recycling method according to one of the items 1 to 22 of the scope of application for a patent, characterized in that the donor wafer (10) includes at least one layer, and the at least one layer further includes having substantially less than or equal to the layer. 5% carbon 7 degrees carbon. 24.—The useful layer on the donor wafer (10) is removed so as to be transferred to -39-This paper size is applicable to the Chinese National Standard (CNS) A4 specification (21 × x 297 public love) 200411821 6. Scope of patent application 5 10 15 The method of printing by the consumer co-operatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 20 receiving substrate (6) is characterized in that it includes: ⑽ bonding the donor wafer ⑽ to the receiving substrate ⑹; 接 connecting σ to the useful layer of the receiving substrate ⑹ Separated from the donor wafer (10); 回收 Recycling the donor wafer (10) in accordance with the recovery method described in one of the items 1 to 23 of the scope of the patent application. 8. 25. The method for removing a useful layer as described in item 24 of the scope of patent application, characterized in that it includes a step of forming a bonding layer before step ⑷. 26. The method for removing useful layers as described in one of items 24 and 25 of the scope of patent application, characterized in that it further comprises: before step (a), a donor wafer (10 The step of implanting atomic matter at a certain depth 'in order to form a fragile zone at this depth; and-step (b) operates by supplying energy to the donor wafer (10) to facilitate the fragile zone hierarchy The structure containing the receiving substrate (6) is separated from the useful layer. 27. The method for removing useful layers as described in one of the 24th scope of the patent application, characterized in that:-it further comprises before step 0), the donor wafer (10) by porosification ) To form a layer accompanied by a layer of growth (after separation in step (b), it will become a useful layer), the porous layer forms a fragile zone inside the buffer structure (I) or above the buffer structure; And -40-This paper size is in accordance with Chinese National Standard (CNS) A4 (210x297 mm) 5 15 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 20 VI. Application for Patent Scope Step (b) is to provide energy to Shi Zijing It is round to facilitate the fragile zone hierarchy to separate the structure containing the receiving substrate from the useful layer. The second is as described in the order of the patent application range 24 to 30. Useful: The method 'is characterized in that the part containing the buffer structure (J) is separated during step (i). 29. The method for removing a useful layer as described in any one of items 24 to 27 of the scope of patent application ', characterized in that the donor wafer (10) includes-above the side of the substrate away from the substrate before removal. The cover layer () 'and the useful layer separated during step (b) include at least a part of the upper cover. I means 30.-A method for periodically removing useful layers from a donor wafer (10). F is characterized in that it includes several steps for removing useful layers. One of these steps follows the application scope of patent applications Nos. 24 to 29. The removal method described in one of ^. Several methods of periodic removal as described in one of the 30 items of the patent application scope or the removal method U as described in the stalk fish item in the application scope of the patent application items 24 to M, for generating a receiving base And the structure of a useful layer, the useful layer contains at least one of the following materials: strain S1, Ge, alloys belonging to the Liao family, and its composition is a crime (Al, Ga, In)-(N, P, As ) Combine selected components. 32.-The application of the periodic removal method as described in item 30 of the patent application scope or the high removal method as described in one of the application scopes 24 to 29 'for the production of semiconductors on the insulating layer Structure -41-This paper ruler «Fortune Country Specification" X 297 mm) 200411821 Printed by the Consumers' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A8 B8 C8 D8 6. The scope of patent application is made, this structure includes the receiving substrate (6) and Useful layer 33. A donor wafer (10) which is provided by extracting and provides a useful layer and can be recovered according to the recovery method described in one of items 1 to 23 of the scope of patent application, is characterized by: The sequence includes a substrate (1) and one of the remaining parts of the buffer structure (I). 2 4 This paper size is in accordance with China National Standard (CNS) A4 (210 x 297 mm)