TW200402606A - Exposure system and exposure method - Google Patents

Abstract

In order to maintain a mirror reflectance and a lens transmittance and keep an initial performance for an extended period, the exposure system of the present invention illuminates a mask (27) with an exposure light having a wavelength in a vacuum ultraviolet region and transfers a pattern image on the mask (27) onto a substrate (37), wherein the exposure system comprises gas supply mechanisms (23-26, 69-72) provided so as to supply a gas mainly containing an inert gas or a rare gas to an optical path space the exposure light passes through, and allow the gas supplied to at least part of the optical path space to contain hydrogen having a specific concentration.

Description

200402606 发明 Description of the invention: [Technical field to which the invention belongs] When a semiconductor integrated circuit, device, or reticle is used, the present invention relates to an exposure device used for manufacturing a liquid crystal display element, a thin-film magnetic head, and other miniatures by using a lithography technology. And exposure methods. [Prior art]

To form fine patterns of electronic components such as semiconductor integrated circuits and liquid crystal display elements, the method that can be used is a photomask (also known as a reticle) that is drawn by expanding the pattern to be formed 4 to 5 times larger than yours. ) Pattern, the projection exposure device is used to reduce the exposure and transfer to the exposed substrate such as a wafer. The projection exposure apparatus used for the transfer is corresponding to the miniaturization of the semiconductor integrated circuit, and its exposure wavelength has been shifted to a shorter wavelength side. At present, although its wavelength is mainly 248nm of KrF excimer laser light, but ArF excimer laser light with a newer wavelength] 93nm has also gradually entered the stage of practical use-step by using a shorter wavelength of 157nm laser light, or wavelength

126nmt A. Projection exposure devices such as laser light sources in the so-called vacuum ultraviolet wavelength band have also been developed. Since these light beams in the vacuum ultraviolet wavelength range have a large absorption of oxygen or water vapor, hydrocarbons (hereinafter referred to as "absorptive gases"), they must be absorbed by the light path through which the light passes. Substitute the gas with nitrogen or rare gas (hereinafter referred to as "low absorption gas"). Eight For example, as for the concentration of oxygen or water vapor, it is necessary to suppress the average concentration of 200402606 in the optical path below the ppm level. If the specification of the residual concentration of the absorbent gas does not satisfy the above specifications, the exposure energy on the exposed substrate such as a wafer will be significantly reduced. Furthermore, glass materials that pass through these vacuum ultraviolet regions are limited to fluorite and the like. Therefore, it is difficult to correct the chromatic aberration in the refractive optical system. Therefore, as for the projection optical system, it is expected that a reflective refractive optical system of an optical system composed of a reflecting mirror (concave mirror) and a lens is used. In this optical system, a plane mirror for separating a light beam incident on the concave mirror from a light beam reflected from the concave mirror is also required. These mirrors or flat mirrors

Use is seen as promising.

It has a problem that its reflectance decreases sharply. Oxidation occurs not only in mirrors containing aluminum film

The problem of reduced emissivity. No problem, and. Furthermore, ‘not only the opposite side but also the surface’ will cause

Decrease in water vapor concentration, but especially with regard to water vapor, the moisture absorbed into the lens barrel or 200402606 lens holding mechanism that constitutes the very important system of the optical system's emissivity will continue to escape slowly for a long time, so its concentration should be suppressed to Below 1 ppm is difficult. If the reflectance of the mirror or the reflection of the lens surface prevents the transmittance of the surface layer from decreasing, the exposure energy to the exposed substrate such as the wafer will be reduced, so the processing capacity of the exposure device will be reduced, resulting in the problem that the initial performance of the exposure device cannot be maintained . In addition, even if the above-mentioned oxidation does not occur, in the vacuum ultraviolet region, a mirror having such a high reflectance cannot be manufactured, and the upper limit of the reflectance depends on the degree. Therefore, a part of the 'exposure light' is absorbed by the mirror and the mirror is heated. As a result, the reflector may be deformed by thermal expansion. [Summary of the Invention] The present invention is based on problems such as y P, +, &gt; _ U, and its purpose is to achieve: even if the vacuum ultraviolet light is used as the exposure light, In some cases, you can still learn the reflectivity of the mirror or the side of the lens ~ 1. This exposure device and exposure method that maintain the initial performance for a long period of time, and prevent the heat generated by the exposure light), can realize the realization of a stable method for a long time. Also for the purpose. In the following, the reference symbols shown in the explanatory diagrams of this item are used to describe the optical elements (exposure devices and exposures for the optical performance of optical elements (reflectors, lenses, etc.) that are not limited to these reference symbols for explanation. Although the present invention is in accordance with the embodiment, the components of the present invention are shown in the diagram. The exposure device 200402606 according to the first aspect of the present invention, the pattern on the mask is like: gas supply mechanism (7, 8 set, which is used to illuminate the photomask (27) with exposure light and is transferred to the substrate (37), which is characterized by having 0) for supplying an inert gas or a rare gas to the light path space through which the exposure light passes. The main component gas is such that at least a part of the gas supplied to the optical path workshop contains hydrogen of a predetermined concentration. If the exposure device according to the first aspect of the present invention has an illumination optical system (IL) Is used to illuminate the mask with the exposure light; and a projection photon system (PL) is used to transfer the pattern image to the substrate, and the two optical paths are arranged in the illumination optical system and the One or both sides of the shadow optical system. Right one or both of the illumination optical system or the projection optical system 'has a reflective optical element (53, 56) for reflecting the light for exposure, particularly preferred is The gas is supplied to a space containing the reflective optical element. If at least one of the illumination optical system or the projection optical system has a plurality of optical path spaces independent of each other, the gas supply mechanism can be used to separate The gas supplied to the plurality of optical path spaces contains a predetermined concentration of hydrogen. The inert gas or noble gas can be exemplified by nitrogen, helium, neon, etc. The gas should preferably not contain oxygen and water vapor. In addition, the concentration of the hydrogen is smaller than The best is to make the partial pressure ratio less than 10%. According to the present invention, the gas containing hydrogen can be supplied to part or all of the optical path space, and the optical element (reflection in the optical path) can be suppressed by the reduction effect of hydrogen. Mirrors or lenses, etc.) have deteriorated their optical characteristics (for example, the surface layer of mirrors containing lenses and mirrors or the surface of the lens to prevent oxidation (The decrease in the reflectance or transmittance is achieved), so the sound optical characteristics of 200402606 can be stably displayed for a long time. In order to solve the above problem, the exposure device according to the second aspect of the present invention uses exposure light to The illumination mask (27) and the pattern image on the chirped mask are transferred to the substrate (37), which is characterized by having a gas supply mechanism (163 165 I66, 168) for the light path space through which the exposure light passes. 'Supply gas with inert gas or rare gas as the main component; and blowing mechanism (164, 167, 202' 221), which is used to reduce the number of optical elements defined in the number of optical elements arranged in the optical path space ⑴3 ), Blow out the gas. The β human exit mechanism 'is capable of forming an air flow different from that of the gas generated by the gas supply mechanism for the optical element'. The gas may contain a predetermined amount of g ^ β soil, especially the lice oxygen. In this case, the hydrogen concentration should be less than about 10% of the partial pressure ratio compared with the L. This inert gas or noble gas can be used for nitrogen, helium, neon, and the like. The gas is preferably free of oxygen and water vapor. According to this I ’, because the gas is blown to the optical element (reflector or lens, etc.), fresh gas is often supplied near the optical element to prevent it from happening. = Water vapor on the surface of the material (lens barrel, lens, etc.) diffuses or attaches to the surface of the optical element. Therefore, the optical element can be prevented. In addition, if the temperature-adjusted gas is blown on the optical element, the temperature of the light element can also be adjusted, and the banding of the optical element can be suppressed. In this case, 'if helium is used as the gas', by the high heat conduction of the atmosphere, it is possible to: :: cool the optical element by the absorption of the exposure light: and prevent the optical caused by the heat The deformation of the component and the resulting appearance. If the gas is mixed with hydrogen, the reduction of chlorine can further prevent the optical element from being oxidized. 11 200402606 Exposure to the view of the younger brother of the 2nd f address &lt; Tons + Yu Yicheng is further equipped with a rectifier city structure (204), s is placed in the air blown out of the gas supply port of the blower ^ 202 ) Gas supply port to reduce or uniformize the rolling flow from the orifice plate. If the gas is only blown out of the outer part of the optical element with a relatively high concentration of pollutants, the flow will be drawn into its surroundings. Although it is a trace amount, it is feared that the dye will reach the surface of the optical element. . The gas from the suffocation of the optical element ~ The stomach is reduced or uniformed by the rectification mechanism to reduce the flow rate of the lice that blows the ritual body, and to prevent external gases containing contaminating substances from being caught on the surface. This can further reduce the contamination (oxidation) that reaches the surface of the optical element / Fang Xianxian, and prevent the optical characteristics and unevenness of the optical element from occurring). <Exposure (reduction in reflectance or reduction in transmittance) The exposure apparatus of the second aspect of the present invention can be further provided with an auxiliary airflow method, and the gas supply port of the mechanism (221) blows wood and rolls. As mentioned above, if only: = 二: optical element, the airflow of the gas is drawn into the surrounding air of “= 二 =”, although it is a trace amount, it is worried that the pollutant t will reach the surface of the first part. Therefore, in the present invention By supplying the air of the auxiliary blow-out mechanism along the blower: i Erzhi Township (hereinafter referred to as the main air stream): ..., the following is called the auxiliary air stream), it can suppress the surrounding body containing pollutants from being drawn into the main air stream. , So as to reduce the reach of the surface of the optical element. By this :: to further prevent the surface of the optical element from being contaminated (oxidized), can prevent the optical characteristics of the optical 1 from deteriorating (reduced reflectance or transmittance, unevenness ::: =) Second, in this case, the gas supply of the blowing mechanism is further provided. At least one side of the gas supply port of the blowing mechanism may be provided with a rectifier 12 200402606 mechanism to reduce or uniform the gas flow of the gas blowing from the gas supply port. In the first In the exposure device of the second aspect, the rectifying mechanism can be provided with a plate-shaped body so as to be mounted around the gas supply port so as to face outward. In the exposure device of the second aspect of the present invention, the rectifying mechanism can adopt approximately A funnel-shaped conduit portion is installed at the gas supply port so that the downstream side is enlarged. If the exposure device according to the second aspect of the present invention uses the conduit portion as the rectifying mechanism, a shielding plate can be provided. The opening p of the duct p is occluded. The shape of the shielding plate is selected according to the shape of the optical element of the gas blowing object. For example, when gas is supplied along the reflecting surface from the side of the reflector (optical element) If plates with similar shapes on the sides of the mirror are arranged in a corresponding manner, turbulence will occur due to reducing gas collisions on the sides of the mirror, and a uniform air flow will occur along the reflecting surface of the mirror, so It is possible to reduce the involvement of external gases containing pollutants, and to further effectively prevent contamination (oxidation) on the surface of the device. In the second aspect of the present invention In the case of an exposure device using a duct section as the rectifying mechanism, a plurality of diffuser plates (diffusers) can be provided inside the duct section to rectify the gas flow, or it can be installed in the opening portion of the section. A mesh plate or a perforation / plate with a plurality of through holes can further reduce the speed or uniformity of the gas flow supplied to the optical element, and can further reduce the involvement of external gases containing pollutants. The opening portion of the duct portion is provided with a purification filter plate (particulate filter, etc.). The 200402606 can further supply a clean and clean gas, which can reduce the adhesion of pollutants to the surface of the optical element. In the exposure device of the second aspect of the present invention, the gas, It is preferable to use a gas whose main component is an inert gas or a rare gas (for example, nitrogen, helium, neon, etc.). Moreover, the gas can contain a predetermined concentration of hydrogen. In this case, the concentration of hydrogen is more preferable. Below a partial pressure ratio of about 0%. The gas is preferably free of oxygen and water vapor. In the exposure apparatus according to the second aspect of the present invention, it is preferable that the exposure device is provided on the illumination optical system (UL) (the mask (27) is illuminated with the exposure light) and the projection optical system (PL) (the pattern image At least one reflective optical element (_ 'supplied on the substrate (37)) supplies the gas. Since this reflective optical element can be efficiently suppressed, the reflective surface is oxidized by a contaminated substance such as moisture and the reflectance is low. The situation is uneven. Also, in the warmth view of the second view of the present invention, the first exposure is set, and the lice supply of the blower can be directed toward the optical lens. Several berylliums are provided throughout the w. There are "conflicts or influences" between the air flow of the gas blown from the milk supply ports in the optical element, and the amount of pollutants reaching the optical element decreases as they leave from the optical element. In addition, in the exposure device of the second aspect of the present invention, an exhaust mechanism having a gas exhaust port is provided. Further, this is further provided. The gas exhaust port is relatively The gas supply port of the institution is For Haihe said, the position of the optical element should be approximately #. The gas supply port actively moves toward the light exhaust port, and the gas from the gas is exhausted, so people have to make the gas smooth. Circulation, reducing the occurrence of turbulence, so each of the external gases with cleverly dyed substances is reduced, and the pollutants to the

14 200402606 The number of optical elements has also decreased.

In order to solve the above-mentioned problems, the exposure device according to the third aspect of the present invention illuminates a photomask (27) with exposure light, and transfers a pattern image on the photomask to a substrate (37). With an isolation member (100, 101, 112, 112a, U2b, 118, 118a, 118b), the light path space through which the exposure light passes is isolated to include a reflective optical element (丨 丨 3, 11 7) The first space and the second space not including the reflective optical element; the first gas supply mechanism (141, 142, 143, 144) supplies the first gas containing an inert gas or a rare gas to the first gas;丨 space; the second gas supply mechanism (151, 152) supplies a second gas different from the first gas to the second space.

In this case, the supply amount of the second gas to the first space can be made different from the supply amount of the second gas to the second space. In addition, the main components of the first gas and the second gas can be made different from each other. Moreover, the gas can contain hydrogen at a predetermined concentration. The hydrogen concentration in this case is less than about 10% of the partial pressure ratio compared to &lt;. The i-th gas and / or the second gas negative = prompts nitrogen, helium, neon, and the like. Such a gas is preferably free of oxygen and: according to the present invention, since the gases are supplied independently of each other to the space including the reflective IS: the walking space and the space without the reflective optical element ..., the first space of the first reflective optical element of the package I , And does not include separation here, so it can strengthen the gas supply capacity to this space: the water vapor is called from the structure that constitutes its optical path space (the surface of the lens barrel, transparent, 'remaining water vapor concentration' is not The surface area is ^ I ν, &gt; 〇15 200402606 is directly proportional to the inversely proportional gas flow. ^ ^ ^ Therefore, by making the space containing the 7C pieces of reflection learning first extremely small, place $ ^, Du /, P A large amount of gas circulates, and the moon dagger further reduces the water vapor concentration between the reflecting optical element and the vulture. In order to solve the above problem, the exposure device according to the fourth aspect of the present invention is used to illuminate the mask with exposure light. The pattern shadow on the reticle is printed on the substrate (37), which is characterized in that: in the path space through which the calendering light passes, a gas containing an inert gas or a rare gas as the main component is supplied and the gas is supplied to the Light path At least _ part of the hydrogen at a predetermined concentration can achieve the effect of +] m. The exposure device of uy is also to solve the above problems. The exposure device according to the fifth aspect of the present invention uses exposure light. To illuminate the photomask (27), and transfer the pattern image on the photomask to the substrate (37), which is characterized in that: in the light path space through which the exposure light passes, it is mainly supplied with an inert gas or a rare gas The gas of the component blows out the gas to the photonic element (11 3, 11 7) having a metal film among a plurality of optical elements arranged in the space of Haiguang Road. The same effect as the exposure device of the second aspect can be achieved. In order to solve the above-mentioned problems, the exposure apparatus according to the sixth aspect of the present invention illuminates a mask (27) with exposure light, and imprints a pattern image on the mask on a substrate (37), which is characterized by: · Isolate the light path space through which the exposure light passes through into the first space containing reflective optical elements (丨 13, 117) and the second space not containing this reflective optical element, mainly inert gas or rare gas The first gas is supplied to the first space, and the second gas, which is different from the first gas, is supplied to the second space. The same effect as 200402606 and the exposure device of the third aspect can be achieved. To solve the above problem, according to the exposure method of the seventh aspect of the present invention, the mask (27) is illuminated with exposure light, and the pattern image t on the mask is printed on the substrate (37), which is characterized by: While exposing the specific substrate to a specific area, the famous substrate is exposed, and the specific area is wider than the portion of the exposure light that is arranged on at least one optical element (201) on the light path of the exposure light. In the present invention, the substrate is exposed while the gas is blown out on the optical element, so the pattern can be transferred while the surface of the optical element is kept clean with the gas, that is, the optical element has good optical characteristics, and the exposure accuracy can be improved. . In order to solve the above-mentioned problem, the method for manufacturing an electronic component according to the eighth aspect of the present invention is characterized by including a lithography process using any one of the above-mentioned sixth to sixth aspects of the present invention. The exposure device of the viewpoint transfers a pattern formed on the photomask (27) to a substrate (37). Since the optical device of the present invention has less contamination on the surface of the optical element, it can manufacture electronic components of good quality. And, the exposure device or exposure method of the present invention is particularly suitable for the case of using exposure light with a vacuum ultraviolet range wavelength in the range of ΓΤ, 120nm to I95nm. [Embodiment] Hereinafter, an embodiment of the present invention will be described using drawings. Fig. 1 'is a diagram showing the outline of an exposure apparatus according to a first embodiment of the present invention.' This exposure apparatus is a step-scanning (scanning) projection exposure apparatus 200402606. Fluorine laser (F2 laser) with a wavelength of 157nm, plutonium dimer laser (Kh excimer laser) with a wavelength of M6nm, argon dimer laser (Ar2 excimer laser) with a wavelength of 126nm, etc. The light beam emitted from the light source 1 passes through the beam matching unit (but can be broadly interpreted as a part of the illumination optical system) BMU and illumination optical system I] L to illuminate the mask 27, and the pattern on the mask 27 is projected The optical system pL is projected on the wafer 37. The beam matching unit BMU is composed of a refraction mirror housed in the beta chamber 2: 'relay lenses 4, 5', and guides the illumination beam to the illumination optical system IL housed in the illumination system room 11. Shooting optical element 12. ^ The light beam of the self-diffractive optical element 12 passes through the relay lens 13 and the refraction lens = the relay lens 15 and enters the compound eye used as an optical integrator (equalizer). Here, instead of using a fly-eye lens, you can also use a rod integrator (inner-surface reflection-type integration or diffractive optical element, etc.) Also, the fly-eye lens :: In order to further improve the uniformity of the illumination distribution, you can also Tandem configuration 2 segments 0 "Aperture aperture system 17 is arranged on the exit surface of fly-eye lens 16. The aperture system, system 17 'is arranged in a switchable manner: the circular aperture diaphragm for general lighting is composed of a plurality of eccentric It is composed of a small opening 〇; opening aperture for wheel belt lighting, etc., and the diffractive optical element ^ uses a phase-type diffraction grating to illuminate the deformed lighting, etc .: It has a shape that can be efficiently bundled. The light beam of the aperture system 17 passes through the relay lens group Η, iris 19, the relay lens groups 2Q, 21, and the refractive mirror 22, and irradiates the light 18 200402606 cover ρ rj —, the cover contains a true M with a mechanism, etc. It can be held on the material carrier 28. "28" can be set on the photomask plate (shown pillar) 29, Wan Zhen clothing set 36 is not shown in the figure, b scan on the left and right sides of the paper surface. Position of movable shovel cover 27, &gt; / 乃, spear The life set by Xi Qin Mirror 31 is set on the light 1 * y and the field radio interferometer 32 is set to measure-the square, the mobile mirror on the first army planting platform 3 is set 29, and the heart is set at 1 heart. Find. And, "light". The wall is covered with a high air-tight barrier wall, and it is clamped into a strict loading platform room 30. Laser + Hu 呌 Q. The soil is formed, and the first cover is transmitted through f 33 V The length measuring path of the juice 32 is transmitted through the glass transmission teeth 33 into the mask stage chamber 30. The beam matching unit BMZ on the 22nd, the illumination optics system, and the system IL are air-tight by a knife. In the BMU room 2 and the Zhaoming system room 11 with high barrier walls, the outer space is separated from the outer space by adding…, Ν «outside the room. Deletion of the room 2 and the photo system room η 'is performed by the relay lens 5 and JL. Measures play &amp; ', the member 6 separates each other's internal space (light path space) 隹. Illuminated car turns the palace 11 + soil g. Γ7 month ·, · 11 to 11 first cover 27 side opening by transparent The plate 80 is hermetically closed. The relay lens 5 and the supporting member 6 have the same structure as the sealing material ⑼ and the supporting member 192 of the second embodiment described later... By condensing the projection optical system PL housed in the lens barrel 50, a pattern image of a mask 27 is formed on the wafer 37. The light for exposure to the projection optical system 5 () after being emitted from the mask 27 is emitted The transparent mirrors 51 and 52 reflect the V-shaped reflecting surface on the cross-section of the V-block reflecting mirror (bentroof-type flat reflecting mirror) 53 on the side reflecting surface 53 &amp; 55, and the light beam 'reflected by the concave mirror (concave mirror) 56 passes through the lenses 54 and 55 again, and is reflected by the lower reflecting surface 53b of the V block mirror 53. Then, through the lenses 57 to 64, the crystal 19 200402606 circle 37 is reached. The lens barrel 50 of the projection optical system PL also has an air-tight structure. The lens 51 closest to the mask 27, the lens 64 closest to the wafer 37, and the space (light path space) surrounded by the lens barrel 50 are external and external. Become airtight. Instead of the v-block mirror 53, two plane mirrors can be combined to form the mirror 53. The wafer 37 is held on the wafer stage 38 and the wafer stage 38 can be scanned on the wafer tray (provided on a pillar or a base plate (not shown) through the vibration isolating device 43) 39 in the left-right direction and the front-rear direction of the paper surface. And mobile. The position of the wafer 3 is obtained by measuring the position of the moving mirror 40 provided on the wafer stage 38 with respect to the laser interferometer 42 provided to the moving mirror 40. In addition, the periphery of the wafer tray 39 &lt; is covered with a barrier wall with high airtightness to form a wafer stage t 44. The length measuring optical path of the laser interferometer 42 is incident on the wafer stage chamber 44 through a transmission window 41 made of glass. As mentioned above, if the vacuum ultraviolet range = wavelength light with a wavelength in the range of 120nm ~ 195nm is used as the exposure light, it is necessary to exclude oxygen, water vapor, gas of the hydrocarbon system, etc. from the optical path. Strongly absorbed gas (absorptive gas). Therefore, in this embodiment, the light path of the exposure light in the BMU chamber 2, the illumination system chamber 11 of the illumination optical system, the mask stage chamber 30, the lens barrel 50 of the projection optical system PL, and the wafer stage chamber 44 are separated. The space (optical path m) 'and its vicinity are substantially airtight to the outside as described above. Furthermore, the joints of the respective parts 2, η, 30, 50, and 44 are also hermetically sealed. That is, the joint portion between the BMU chamber 2 and the lighting system chamber η is hermetically joined by using a sealing material (not shown) such as an O-ring. However, the joint part of the mask carrier △ 20 200402606 chamber 30 and the lighting system chamber h, the joint part of the mask stage chamber% virtual mirror &amp; 50, and the joint stage of the wafer stage chamber 44 and the lens barrel 50: used as described above O-rings and other sealing materials are joined. The reason is as follows. At the exposure of = 37, the mask 27, the mask stage 28, and the wafer are required;: :: 0: stage 38: step scanning to perform scan exposure, so The stage chamber and the round stage stage 44 may generate vibrations accompanying the scanning operation. Therefore, if the two stage stages 30, 44 and illumination are combined with each other, the vibration is transmitted to the above-mentioned components, and the imaging performance is improved. ^ / Xing 0 Room 2: 5Γ application form 'the airtightness between the two stage chambers 30, 44 and the lighting system to the η mirror and 50' with thin cymbal members 66, 67 to protect the two film binding members 66, system It is connected to both the wing-shaped member 65 and the wafer stage chamber 44 provided so as to protrude beyond the outer periphery of the lens barrel 50 so that the holes therebetween are made. The thin-plate member 68 is connected to both the upper part of the lighting system room and the upper part of the mask stage room 30, so as to make the units air-hearted.溥 The film member 'preferably is a protective film composed of ethylene vinyl alcohol resin (evOh tree: ": a thin film of good thinness formed by covering the outside of the film material with an adhesive through the adhesive')-further on the film The inner surface of the material is vapor-deposited with aluminum. Adult X is not limited to a member that prevents the gas from detaching from the film material. The film member may also be formed in a bellows shape. The exposure device in this embodiment In order to exclude the absorptive gas from the air-tightened spaces as described above, with a gas replacement mechanism, use: fill the vacuum ultraviolet region with a small amount of nitrogen or a rare gas such as helium, argon or neon ( Low absorption gas). 21 200402606 The gas replacement mechanism is provided for each unit (BMU room 2, lighting system room 11, photomask stage 30, lens barrel 50, wafer stage chamber 44). Each gas replacement mechanism In order to supply low-absorptive gas (purified body) to the corresponding units 2, u, 3G, 5G, and 44 respectively, the gas supply pipes 7, 23, 34, and 69, 45 'and each order for exhaust 2. 丨 丨, 30, 50, 44 gas has exhaust pipes, 25, 35, 71, 46 ° connected to one end of each unit 2, u, 30, 50, 44 °, and each gas The replacement mechanism also includes low-absorptive gas supplies 8, 24, and 70 (parts of which are not shown) connected to the other ends of the gas supply pipes 7 23 34 69, 45, respectively. Gas exhausters 10, brackets, and 72 (part of which are not shown) at the other end of the gas pipes 9, 25, 35, 71, and 46 (low-absorptive gas suppliers 8, 24, 70, etc.) And gas exhausters 10, 26, 72, etc., to exhaust the gas in each unit 2, 1 ^, 30, 50, 44, and at the same time, by supplying a new low-absorbent gas, each of the units S 2, 11, 30, The gas of 50, 4 "is replaced with this low-absorbent gas. In this embodiment, although the units 2, 11, and 50 are replaced with a low-absorbent gas having an oxygen and water vapor concentration of 0.1 ppm or less, ^ month 丨J, oxygen leaks into the optical path space in each unit 2, U, 50 due to leaks due to incomplete airtightness. Water vapor is leaked through leaks. It is separated (evaporated) from the inner wall of the lens barrel or chamber of the optical path space or the surface of the lens or mirror, and penetrates into the optical path space. Therefore, these absorbent gases (oxygen or The concentration of water vapor) has to be increased in the low-absorbent gas supplied by 22 22 200402606. However, if there is oxygen or water vapor in the light path space of the exposure device using vacuum ultraviolet light as the light source, this If oxygen or water vapor is used, a chemical reaction (such as active oxygen) occurs through the energy of vacuum ultraviolet light, so that the light reflecting surface layer containing the metal film (used on the surface of the mirror in the optical system IL, pL) or metal The reflection of fluoride as the main component prevents the surface layer (used on the lens surface) from oxidizing, resulting in a decrease in the reflectance of the mirror or a decrease in the transmittance of the lens.

Therefore, in the exposure device of this embodiment, the low-absorptive gas supplied to the βΜυ chamber 2, the lighting system chamber Η, and the lens barrel 50 is mixed with a gas having a partial pressure ratio of less than about 10%. Reduction to prevent oxidation of mirrors and reflections.

In the booth 2, nitrogen gas containing 8% of hydrogen is supplied from a low-absorptive gas supplier 8 through a gas supply pipe 7. In the lighting system 胄 u, nitrogen gas containing 1% of gas is supplied from a low-absorptive gas supplier 24 through a gas pipe 23 '. Furthermore, helium containing 8% of hydrogen is supplied from the low-absorptive gas supplier 70 to the lens barrel 50 through the gas supply pipe 69. Because hydrogen is also a gas with small absorption in the vacuum ultraviolet region, the optical content of hydrogen is comparable to one. % High 'However, the concentration of hydrogen is a gas that requires attention during operation. Therefore, the concentration is preferably not higher than 10%. Λ is replaced with the lens barrel 50 to prevent the mirrors 53 and 56 from accompanying thermal deformation, and the mirrors 53 and 56 are cooled. The reason that the main component of the gas inside is helium is that the band heat generated by the light absorption for exposure of 56 and the use of helium with high thermal conductivity can be achieved at the same time.

23 200402606 If you want, you can also change the main knife of the gas replaced in the lens barrel 50 to another gas that is thinner than the right one. However, in this case, because the refractive index of nitrogen or helium sclera and hydrogen are very different, the low-absorptive gas is not necessary, and it is necessary to hunt for ', and / or w. The composition ratio of the gas is in the order of ppm. control. : It is better to measure the composition ratio of nitrogen and hydrogen, and drive the projected optics in the optical system PL based on the results to come to the composition of the above-mentioned change in refractive index. (Secondary mirror) The case where the projection optical system P 丨 A / r is 8 Ah method "PL mirror is the same as the main knife of the gas replaced in 50,-because the refractive index of gas and atmosphere is greatly proportional Variation _ small change in performance associated with cutting == higher performance optical system, control should be set 疋 In order to show only% θθ ^ hl · ^ 迚 the same composition ratio or measurement, and proportionally control the projection optics privately The mechanism of the position of the mirror or reflector in the system pL. The reason for the component (through the BMU chamber 2 and the Rihao Mingya a a) is nitrogen, because the main component k of the gas replaced by Γ nitrogen is Ran milk is cheaper than the rare gas, and its running cost. If the BMU chamber 2 and the clothes also need to be actively cooled, the inside of it can be set to helium. The main component of the direct-change milk is changed, and each unit 2, 11, 5025, 71, the exhaust to gas exhaust filter is designed to exclude oxygen or water there and send the gas to the gas in the gas supply, although through the exhaust pipe 9, 1 () ' 26, 72 'But it can also be controlled by steam to a predetermined temperature, 8 24, 70, and then supplied to each unit 2 24 2 00402606, 11, 50. Another big conclusion — In the form of the younger brother Xiao Xiao, although Zhaoming 6 lens barrel 50 is a single light path space, it can also be divided into a plurality of light paths Space: If :: 统 π to 11 optical path space, y 77 J is a number of optical path]]! Moon shape, the low-absorptive gas supplier is installed in each optical path space. In addition, it is divided into multiple optical paths. ：: Discharge…, it can also make the supply and empty as "the hydrogen content in the low-absorbent gas between the situation of a leading space is different. For example, Ke Li", J should be equipped with a reflector The gas in the condensable gas contains: The gas in the low-absorption and low-absorption gas: The content of the lice in the hall of the light path space of the hall where the lens is configured is not the same. Because it is in the mask stage room 30 or Wafer stage chamber vacuum ultraviolet 弁 $ Μ I transmission and reflection ^, fewer lenses or mirrors, so the pure air-gas connection to the women's row P ... refined by the supply of ... 4,45 supply of low absorption gas, Exhaust the internal gas from breast milk s 35 and 46. Second, the second embodiment of the present invention will be described using FIG. 2. FIG. 2: == The figure of the structure of the projection system used in the projection exposure device of the second embodiment of the Ming ', its basic structure is the projection optical system of the first embodiment of the embodiment shown in FIG. The PL is the same. The projection light, the system PL, is housed in the 1st lens barrel ⑽ and the 2nd lens barrel. ★ An opening is formed in the side of the 1st lens barrel 100, and through this opening, 2 lens barrels 10 to 1 The internal spaces communicate with each other in a horizontal direction. The front end of the second lens barrel is closed. The opening on the side of the mask side of Le 1 lens barrel 100 is hermetically sealed by the lens 110 and the holding mechanisms 110a and 110b. Blocking, the opening at the end of the wafer side is hermetically closed by the lens 127 and its holding mechanism ma, mb. 25 200402606 Inside the first mirror stomach 100, the upper part of the opening to the second mirror 胄 101 is airtightly closed by the lens U2 and its holding mechanism 112a, 112b, and the lower side of the opening In part, the lens 118 and its holding mechanisms 118a, 118b are hermetically sealed. Thereby, inside the lens barrels 100 and 101, three spaces 130, 140, and 150 are divided. The structure of the lenses 110, 127, 112, and 118 and their supporting mechanisms 11a, L, 127a, 127b, 112a, n2b, U8a, and U8b is the structure shown in FIG. 5 and is included in each lens (19 in FIG. 5). ), A circular flat portion 19e is formed at one end, and one side of the flat portion 19e passes through a sealing material 191 such as an O-ring and contacts the supporting member 192 extending from the lens barrel 100. . The second holding member 193 is fixed to the supporting member 192 by bolts 194, nuts 197, and collars 195 and 196, and the protruding portion 193a provided near the front end of the second holding member 193 is pressed flat. The other sealing material 191 and the supporting member 192 of the part i9〇e also surround the lens 190 in a ring shape, thereby maintaining the airtightness above and below the lens 19o. … A lens lu is provided in the space 13 in the lens barrels 100 and 101 through the holding mechanisms 11a and mb, and a plurality of lenses 119 to 126 are provided in the space 150 through the corresponding holding mechanisms 118a to 126a and 118b to 126b. On the side of the first lens barrel 100 in the space 140, a v-block mirror 113 having an upper reflection surface 113a and a lower reflection surface 113b is installed through the supporting member 114. On the second lens barrel 101 side, lenses 115, 116, and The concave mirrors (reflectors) 117 are respectively provided through the holding mechanisms U5a to n7a and 丨 丨 ^ ~ 丨 丨. In this embodiment, the space in the lens barrels 100 and 101 is separated into packages 26 SIS7? 200402606 The space 140 including the mirror 113 and the mirror 117 and the other spaces 130 and 150. Further, helium is supplied to the space 14o including the mirror mu? Through the low-absorptive gas supplier 142 and the gas supply pipe 141, the low-absorptive gas supplier 144 and the gas supply pipe 143, and the inside is replaced with helium. On the other hand, helium is also supplied through the gas supply units 132 and 152 and the gas supply pipes 131 and 151 in the other spaces 13 and 15 and the inside is replaced by helium. The gas in each of the spaces 130, 140, and 150 is exhausted through exhaust pipes 145, 133, and 153 and gas exhausters 146, 134, and 54.

However, at this time, the supply flow rate of helium to the internal surface area of each of the spaces 130, 140, and 150 is set to 140 in the space including the mirrors 113 and 117, and low in the other spaces 13 and 150. . Specifically, helium per internal surface area lm2 is supplied to the space 14 including the mirrors 113 and 117. In addition, the degree of privacy is 5 a liter / minute. In contrast, the helium supply amount per 1W of the internal surface area is set to about 1 liter / minute in the other spaces 13 and 150. Thereby, the water vapor concentration in the space &quot; 0 containing the mirror ii3 (n3a 113b) 1 π which is particularly resistant to oxidation can be reduced, and the oxidation of the mirror 113 U 7 can be prevented, and by suppressing other spaces The helium flow can reduce the operating cost of the device.爯 Get + Dankao in the space 140 containing the reflection mirrors 113 and 117. Since helium is supplied from each reflection mirror n near the mirror 113 117 through the gas supply pipes 141 and 14 3, the reflection product can be made. It is said that the water vapor concentration is lower near 113 and 117 than in other areas in space 140. In addition, for other spaces 130, 150,-Ding Liangyou Buqian wants to cool the lens members 11〇 ~ 112, 118 ~ 127 included in its space # 〆I27 4 inches without cooling. In order to replace the gas, a further reduction in operating costs can be achieved. 27 200402606 In this embodiment, it is also possible to mix hydrogen below i 0% to the above-mentioned helium or nitrogen gas for gas replacement in the lens barrels 100 and 101, which can strongly prevent the mirror (high reflectance surface layer). ) Or reflection to prevent surface oxidation. As usual, the internal space of the lens barrels i 〇, i 〇i of the projection optical system pL is subdivided, so that the low-absorbent gas in the space 140 containing the mirrors 丨 丨 3, 丨 丨 7 is supplied. The flow rate or gas type is not the same as the gas supplied to other spaces 130, 150, and it can also be used with other spaces for spaces containing the illumination optical system ratio chamber 11 or the beam matching unit BMU chamber 2. Second, A third embodiment of the present invention will be described with reference to Fig. 3. FIG. 3 is a diagram showing a projection optical system used by the projection exposure apparatus of the present invention. Its structure is substantially the same as the projection optical system PL of the second embodiment shown in FIG. . However, in the third embodiment, the projection optical system PL is not subdivided into a single airtight space 160. A gas replacement mechanism is provided, and helium is supplied through a gas supplier 162 and a gas supply pipe 161 in a space 160 of the lens barrel 100 and 100, and the gas in the space 160 is discharged through an exhaust pipe 171 and a gas. The air vent ι72 exhausts. Also, as a gas blowing mechanism, a low-absorptive gas is locally blown out on the surface of the reflective surface 113 (reflective surfaces 113a, 113b) of a specific optical element, and gas suppliers 165 and 168, gas supply pipes 163 and 167, and gas injection As the gas blowing mechanism, the devices 164 and 167 are used to locally blow out the low-absorptive gas on the surface of the reflector, and a gas supplier, 170, and a gas supply pipe 169 are provided. 28 200402606 FIG. 4 is a view showing a gas flow of a low-absorptive gas near the V-block mirror 113, and is supplied from the gas ejector 1 64 as low as near the mask-side reflecting surface 113a of the V-block mirror 113. The absorptive gas forms a gas flow, and the low-absorptive gas supplied from the gas ejector 1 67 forms a gas flow near the wafer-side reflecting surface 113b. A gas flow path is formed along the reflecting surfaces 113a, 11 3b from the base portion side to the ridge line of the reflecting mirror 113. Therefore, the surfaces of the reflecting surfaces 113a, 113b of the mirrors 1 and 3 are less in contact with the gas with a higher ratio of the residual oxygen or water vapor concentration around them, and the oxidation of the mirror 113 can be prevented. The same applies to the mirror 11 7. In addition, in the third embodiment, since the types of gases supplied to the lens barrels 100 and 101 projected onto the optical system pL are the same type, the gas suppliers 162, 165, 168, and 170 can be integrated into one supply. Device. In the third embodiment, although the low-absorptive gas is helium, if it is not necessary to actively cool the mirrors 113 and 117, nitrogen or another rare gas may be used. Also, as in the first and second embodiments, a gas in which a predetermined concentration of hydrogen is mixed in nitrogen or a rare gas may be used to further prevent the oxidation of the mirrors 113 and 117. The gas blowing mechanism of the third embodiment can also be applied to the first and second embodiments. In addition, as in the third embodiment, a method of locally blowing low-absorbent gas to the mirrors 113 and 117 to prevent oxidation thereof can also be applied to the lens of the projection optical system PL, the illumination optical system ^, or the optics of the beam matching unit bmu. Components (lenses or mirrors, etc.) are applicable. The gas supplier used in the third embodiment described above can receive gas supply from a milk storage bottle, and can also be supplied from a gas pipeline in a semiconductor factory. 29 200402606 In any case, in order to improve the purity of the milk in the supply optical path, it is preferable to provide a filter or a dust remover to reduce the concentration of an absorbent gas such as oxygen or water vapor, and control its temperature to A temperature control mechanism of a predetermined temperature is not a problem. Next, a fourth embodiment of the present invention will be described. FIG. 6 is a diagram showing a main part of supplying a low-absorptive gas (the other components of a clean air magic) to a v-block mirror (a reflection optical element of a projection optical system used in the projection exposure device of the present invention). Projection exposure The overall configuration of the device, the configuration of the projection optical system, and the gas supply mechanism are the same as those described in the third and third embodiments, and therefore descriptions thereof are omitted. V ′ shown in FIG. 6 Corresponds to the v-block mirror mirror element shown in Figure 3. Nine gas blowing mechanism that blows low-absorbent gas to the partial surface of the v-block mirror 113 shown in Figures 3 and 4 is shown in this figure. Let the low-absorptive gas flow from above and below along the basin reflection surfaces ma, 113b. For this, the gas blowing mechanism of this embodiment, as shown in item 6, is from both sides of the V-block mirror 201 That is, a low-absorption gas is blown out through a gas supply pipe from one side in a direction orthogonal to the direction from the base of the reflection to the ridgeline. As shown in FIG. Air supply on one side of both sides The front end of the piping 2G2 (air supply port), a body installation accessory, is a rectification mechanism used to reduce the speed or uniformity of the blown airflow. Here, it means the installation of a gas supply cover (a slightly funnel-shaped An example of an accessory is the duct). By installing the gas supply cover 2G4 as described above, the cross-sectional area of the flow path of the low-absorbent gas blown from the gas supply pipe 2002 200402606 is enlarged (larger). Therefore, the flow velocity of the low-absorbent gas becomes lower along with it. Therefore, the v-block type mirror 2 = near the reflective surfaces 201a and 201b is completely filled with the supplied low-absorbent gas, which can cause residual oxygen or water vapor As shown in FIG. 7, the entrainment of foreign gas having a relatively high concentration is reduced, and the gas supply pipe 203 and the gas supply cover 20, which have the same configuration as the gas supply pipe 20 2 and the gas supply cover 204, may also be used. It is provided on the other side of both sides of the v-block mirror 201. In this case, it is preferable that the gas supply caps 204 and 205 'have their openings (supply ports) separated by the v-block mirror 201 i is installed in the opposite way. If this type of air supply pipe 202 and air supply | 204 are installed only on the v-block mirror 2 In the case of one side, the entrainment of the gas flow of the low-absorbent gas is necessarily lower on the upstream side and higher on the downstream side. Therefore, the lower the reflectance, the greater the concern. As shown in the figure, the air supply piping 202'2 03 and the air supply covers 204 and 205 are installed on both sides of the V-block reflector 201 as shown in the figure. The low-absorptive gas effluxed from both sides 205 and 205 conflict with each other at the approximate central portions of the V-block reflection 胄 2G1, resulting in circulation from the reflective surfaces 201a and 201b to the outside (away side), thereby allowing residual oxygen or water to flow. The high vapor concentration of the outer gas GS2 spreads across the reflective surfaces 201a and 201b, which can further reduce the reflectance or uneven reflectance of the reflective surfaces 201a and 201b of the v-block mirror 20m. It happened. Here, the optical element to which the low-absorptive gas is supplied is a K-block mirror 2 (Π ', as described above, the gas supply piping 202, 2003, and the gas supply cover 204,

205 is one for each and a total of two are arranged near its two sides 31 200402606 is more appropriate ^, but in the case of the optical element of a concave mirror, a plurality (for example, four, six, eight) can be further exaggerated. In this case, it is preferable that each supply port of the low-absorptive gas is arranged symmetrically in the center of the target optical element, that is, radially. · As mentioned above, by installing the gas supply caps 204 and 205 on the gas supply piping "202 203, the low-absorbent gas flowing out of the gas supply caps 204 and 205, although flowing slowly, can make the outside The entrainment of air is reduced, but the central part of the air supply hoods 204 and 05 (the extension lines of the air supply piping 202 and 203) has a high flow velocity. As the surrounding flow velocity becomes lower, the flow velocity uniformity is not uniform. It must be high. Therefore, it is possible that t · may cause the inclusion of residual oxygen or outside gas with a relatively high water vapor concentration. Therefore, in the present embodiment, the openings of the air supply caps 204 and 205 are provided with a shield that blocks a part of them. The shielding plate 206 207 is preferably in an extension line including the gas supply piping 202 and 203, that is, the low absorption is blown out from the supply port of the gas supply piping 203, 203. The part where the flow velocity of the sex gas is relatively fast is not set in such a way that it is blown out directly from the openings of the gas supply covers 204 and 205. As a result, the uniformity of the flow rate of the low-absorbent gas blown out from the gas supply cover 205 can be increased, and the entanglement of outside gas with a relatively high concentration of residual oxygen or water vapor can be further reduced. The shape of the β shielding plates 206 and 207 is focused on the v-block mirror 201: the shape of the surface is a square shape, and a triangle similar to this is used. By setting the shape of the shielding plates 206 and 207 to be the same as or similar to the cross-sectional shape of the flow path direction of the low-absorptive milk of the optical element of the object, a smooth air flow along the reflecting surface can be generated, which can further prevent residual oxygen Or the involvement of outside air with a relatively high water vapor concentration. 32 200402606 Here, the fittings (rectification mechanism for reducing or uniformizing the gas state) installed on the gas supply piping 202, 203 are not limited to those shown in Figs. 6 and 7, but may be Use the one shown in Figure 8 to Figure 13. As shown in FIG. 8, the rectifying mechanism used to reduce or equalize the airflow means that a substantially funnel-shaped conduit (cover) 21 3 is used (funnel method) '笞 21 3, which is connected to the air supply pipe 211 The supply port is arranged and installed so as to enlarge the downstream side. The shape of the opening chuan a of the duct 213 is not limited to the rectangular shape (rectangular shape) shown in the figure, but may be circular or semi-circular.

Round, square, or any other shape, but the shape is better, from the structure, shape, supply direction, quantity or configuration of the optical element of the low-absorption gas supply target From the viewpoint, the following figures 9 to 13 are selected, which are improvements of the funnel-type accessories shown in FIG. 8. Fig. 9 'shows a person who installs a rectangular shielding plate 214 in a substantially central portion of the opening 2Ua of the duct 213 (shielding plate method). In FIG. 10, a pair of shield plates 215 integrated with one of the long sides of the opening portion 213a above the opening portion 213a of the duct 213 (both sides in the short side direction of the opening portion 边) is shown (slit method) ). The shape of these shielding plates 215 is not limited to those shown in the figure, and other shapes are also possible. The shape is preferably a shape from the shape of the opening 213a of the duct and a low-absorptive gas supply target. The structure, shape, supply direction of the low-absorptive gas, and the number or arrangement of supply ports are selected. For example, it is conceivable to narrow the gap between the slits at the center, and to increase the gap between the slits from the center. In FIG. U, it is shown that a plurality of diffuser plates 21 6 are installed inside the duct 213 in accordance with the expansion from the supply port of the gas supply pipe 33 200402606 211 to the opening 213a of the duct 213 (diffusion) Device mode). The low-absorptive gas blown out from the supply port of the gas supply pipe 211 is blown out from the opening 21 3 a by being induced by each diffusion plate 21 6. The flow of the low-absorptive gas is expanded by the duct 213. The speed is reduced, and the flow velocity is made uniform by the diffusion plate 216. The number of diffusion plates 21 6 is five in this figure, but it is not limited to this. The diffuser plates 216 may be evenly arranged in a radial shape. However, the closer to the central portion of the extension line of the supply port of the gas supply pipe 211, the faster the flow velocity is, and the slower the outer side is. It is preferable to take this into consideration so that the absorption from the opening 213a of the duct 213 is low. The whole gas has a uniform flow rate, which improves the placement distance or size (length). In FIG. 12 ′, the screen 217 (mesh mode) is installed in the opening 213 a of the duct 213 shown in FIG. 8 so as to cover the entirety. In this way, by installing the screen, the uniformity of the low-absorptive gas that is blown out from the opening (screen) of the duct can also be improved. In addition, although the illustration is omitted, a perforated plate having a large number of through holes can be used instead of the mesh plate 21 7 to achieve the same effect. FIG. 13 shows a case in which a purification filter plate (here, a particle passing plate) 218 is mounted on the opening 213a of the duct 213 shown in FIG. 8 so as to cover the entirety thereof (particle filter method). In this way, by installing a filter plate, the uniformity of the low-absorption gas blown out from the opening 213a (filter plate 218) of the duct 213 can be improved, and in addition, particles (dust, etc.) contained in the low-absorption gas can be removed. So convenient. In FIGS. 12 and 13, although the mesh plate 217 and the filter plate 218 are installed in the opening portion 213 a of the duct 21 3 shown in FIG. 8, they can also be installed in the opening portion of the duct 213 in FIG. 34 200402606 9 and FIG. 10. 21 3a (parts other than the shielding plates 214 and 215) 'or the opening 213a attached to the duct 213 of FIG. The gas supply piping 211 shown in Figs. 8 to 13 does not necessarily have a rectangular cross section, as long as it has an official shape, it can also be circular, oval, polygonal, or any other shape. &Gt; Next, a fifth embodiment of the present invention will be described with reference to Fig. 14. Although the configuration of the mounting duct 213 has been described in the fourth embodiment described above, in this embodiment, as shown in FIG. 14, a plurality of auxiliary gas supply pipes 222 are provided near the main gas supply pipe 221 to The low-absorptive gas blown from the main gas supply pipe 221 is used to supply low-absorptive gas from a plurality of auxiliary gas supply pipes 222. With such a configuration, the v-block mirror 201 is mainly supplied with a low-absorptive gas from the main gas supply pipe 221, but has a low-absorptive gas flow from the auxiliary gas supply pipe 222 because it is approximately parallel to the gas flow. The gas, which is involved in the low-absorbent gas from the main gas supply pipe 221, is a clean, low-absorption gas supplied from the auxiliary gas supply pipe 222, rather than a gas with a high residual oxygen or a relatively high water vapor concentration. The low-absorptive gas of the self-assisted gas supply agent 222 becomes a wall outside the outside gas, so that the low-absorptive gas from the main gas supply pipe 221 becomes involved in outside air. Therefore, the vicinity of the reflecting surfaces 201a and 20lb of the V-block mirror 201 is filled with a low-absorptive gas, which can reduce the entrainment of external air with a relatively high concentration of residual oxygen or water vapor. The low-absorption gas from the auxiliary gas supply pipe 2 2 2 in the 50th example is the same gas as the low-absorption gas blown from the main gas supply pipe 221. In this way, if the same gas is used, the supply device for supplying the low-absorptive gas 35 200402606 to the main gas supply pipe 221 can be divided, and the low-absorptive gas can be supplied to the auxiliary gas supply pipe 222. Department is convenient. However, it is also possible to supply a low-absorption gas that is different from the low-absorption gas of the self-supplying gas supply pipe 221 from the auxiliary gas supply pipe 2 2 2. In this case, through the auxiliary gas supply pipe The low-absorption gas supplied by 222 may have a lower purity than the low-absorption gas supplied from the main gas supply pipe 221 (however, it needs to be sufficiently high-purity than the surrounding gas). The flow rate or flow rate of the low-absorbent gas blown out from the auxiliary gas supply pipe 222 may be the same as the flow rate or flow rate of the low-absorbent gas blown out of the autonomous gas supply port 221, either high or low, in either case. However, the flow rate of the low-absorptive gas supplied from the auxiliary gas supply pipe 222 may be lower than the flow rate of the low-absorptive gas supplied from the autonomous gas supply pipe 221. As shown in FIG. 15, the main gas supply pipe 223 and the auxiliary gas supply pipe 224 having the same configuration as the main gas supply pipe 221 and the auxiliary gas supply second agent 222 may be provided on the ν block mirror 2. 〇1 The other side of both sides. Here, it is preferable that the heart shape ′ is a pair of gas supply pipes 221, 222, 223, and 224 so that the eight openings (supply ports) face each other across the V-block mirror 201. Main gas supply pipe 223 and auxiliary gas supply pipe 223 and auxiliary gas supply pipe 222, which are the same as the main gas supply pipe 221, and the auxiliary gas supply pipe 222, and the situation on the other side of both sides of the V-block mirror 201 As shown in Figure ^, the low-absorptive gases (3) flowing from the main gas supply pipes 221, 223 and the auxiliary gas supply officers 222, 224, respectively, conflict with each other at approximately the center of the v-block mirror 201. Circulation flows from the reflecting surfaces 201a and 20b to the outside (the side away from it). In this way, the residual oxygen or water vapor concentration higher than 36 200402606 can further reduce the involvement of outside gas GS2, and further reduce the reflectance of the reflective surfaces 20a and 201b of the V-block mirror 201. Uneven rates occur. Here, since the optical element to which the low-absorptive gas is supplied is a V-block mirror 201, the main gas supply pipes 221 and 223 and the auxiliary gas supply pipes 222 and 224 are respectively divided on both sides as described above. Set i combination meter 2 'Although it is suitable, as in the case of an optical element of a concave mirror', a complex array (for example, 4 groups, 6 groups, and 8 groups) can be further set. In this case, it is preferable that each supply port with a low-absorptive gas is arranged symmetrically with the optical element as the center, that is, radially. In the fifth embodiment described above, although any of the pipings of 22 pm for the main air supply pipe and 2 ′ for 3 ′ auxiliary air supply pipe, 9 9 / 1々k _ &quot; 224 are not provided, FIG. 6 and FIG. :, The air supply cover 204 shown, and the duct 213 shown in FIG. 8 to FIG. 13 are added with 10 brothers', but can also be used in the main> (prostitute rhyme; 7 its not η ^ 隹 王 仏 基Use the distributors 221 and 223, any one or a plurality of (all may be) pipings for auxiliary gas supply 222-224, and set the gas supply caps 204, δ ~ Figure 13 shown in Figure 6 and Figure 7 The guide tube 213 shown here can further obtain a high effect. Also in FIG. 7 or FIG. 15, the low-absorptive sex 鲰 y θ, +,, and 收 are supplied from both sides of both sides of the V-block mirror 201. Sexual wind limbs ', however, can be constituted such that one side of the body is inversely performing low-absorption oxygen I &amp; ^ G' by not supplying low-absorptivity: the body to enable discharge. With this structure, ⑼ν The low-absorptive gas supplied by the side surface of the block mirror 201 is reflected along the flow of © 201a, Z〇lb and from the other side ^ j. 'So the circle of low-absorptive gas β' energy Henkel low residual oxygen or water vapor than relatively high gas entrainment.

SiScs 37 200402606 In the above embodiment, although the present invention is applied to a reduction projection type exposure device of the step-and-scan method, a reduction projection type exposure device or mirror projection of the step-and-repeat method or the L-joint method is used. Aligner · (mirrorprojection aligner) #, any type of exposure device can also be applied to the present invention. In addition, it is not only an exposure device used in the manufacture of semiconductor elements, but also an exposure device used in the manufacture of liquid crystal display elements, plasma displays, thin-film magnetic heads, and imaging elements (CCD, etc.), micro-machines, etc.) wafers, and In order to manufacture a reticle or a photomask, the present invention can also be applied by exposing the circuit pattern to a glass substrate or an exposure set such as Lu Shixi's circle. That is, the present invention is applicable regardless of the exposure method or application of the exposure device. As the exposure light source 1, in addition to the above, for example, higher harmonics of a YAG laser having an oscillation spectrum at any of the wavelengths of 193 nm, 157 nm, 146 nm, and 126 nm can be used. It is also possible to use single-wavelength lasers oscillating from DFB semiconductor lasers or fiber lasers, or visible wavelengths, for example, by using fiber amplifiers doped with erbium (or erbium and mirrors), and Linear optical crystals are high-order read waves whose wavelength is converted to ultraviolet light. Moreover, the projection optical system can be used not only for a reduction system but also for a magnification system or an enlargement system (for example, an exposure device for manufacturing a liquid crystal display or a plasma display). Further, the projection optical system may use any system of reflective optics, music system, reflective refractive optical system, or refractive optical system. The exposure apparatus of the above embodiment can be manufactured by the following process: the illumination optical system and the projection optical system composed of a plurality of optical elements (lenses, mirrors, etc.) are assembled in the exposure apparatus body to perform optical tuning 38 200402606 , And assemble the reticle stage or wafer stage composed of many mechanical components on the exposure device body to connect the wiring or piping; assemble the laser interferometer or AF device for optical adjustment; clean the gas supply device The recycling device is connected to the lighting optical system and the projection optical system room, the lens barrel or the next wall for space isolation through a pipe; the environmental room with an air conditioning device is assembled; the exposure device is set in the environmental room; Tuning (electricity, adjustment, action confirmation, etc.). In addition, it is preferable to manufacture the exposure device in a clean room that manages temperature, cleanliness, and the like. Next, for a method of manufacturing a device using a field exposure device in a lithography process, referring to FIG. 16 and FIG. 17, FIG. 16 and FIG. Π are a table: for example, a semiconductor wafer such as Λ or! F 1, a liquid crystal panel, a thin film, and a thin film magnetic head. The flow chart of the process of electronic components such as M-type machine. As shown in Figure 16, in the process of electronic components, first perform the functional and performance design of the electronic components such as circuit design (step s_, complex j to design the pattern to achieve its function, and produce the designed circuit. Photomask (step S92G). In addition, on the other hand, a material such as Shi Xi and other silicon substrates is used (step S930). Yen (Secondly, using the photomask made in step Satoshi and the wafer made in step, using lithography technology at q (step _). Specifically, as shown in FIG. 17, first ^ Lusi step _'cmstep_, electrode formation (: = sub-implantation (step S9⑷), etc., forming a thin film of wiring film or semiconductor film on the surface of the wafer. Secondly, use light &quot;: cloth. Coating photosensitizer (light (Resistance) on the entire surface of the film (coating (coating 39 200402606). Secondly, the substrate coated with the photoresist is mounted on the wafer holder of the exposure device of the present invention, and the photomask produced in step S920 will be used. Combined on the reticle stage, the pattern formed on the photomask is reduced and transferred to the wafer (step S946). At this time, in the exposure device, each irradiation collar j of the wafer is positioned in order to light The pattern of the mask is sequentially transferred to each irradiation area. After the exposure is completed, the wafer is unloaded from the wafer holder and developed using a developing device (developer) (step S947). Thereby, a mask pattern is formed on the surface of the wafer.

Then, the wafer that has undergone the development process is etched with an etching device (S948), and the photoresist remaining on the surface of the wafer, such as a plasma ashing device, is removed (Step S94g). ^ In this way, an insulating layer or an electric temple pattern is formed in each irradiation area of the wafer. In addition, by replacing the photomask, this process is repeated one by one to form a continuous circuit. After the circuit is formed on the wafer, as shown in FIG. 16, the components are assembled (step S950). Specifically, judge wafers

:, Each chip is mounted on a lead frame or a package, and the electrodes are connected to each other for wiring, and resin sealing is performed. ^ #. The force of components manufactured by the company = inspections such as confirmation tests and durability tests (step s_), and 70 pieces of finished products are shipped (step S970). 02: The invention is based on the above embodiments, It is not necessary to make various changes within the scope of the present invention. According to the present invention, even if the exposure device using vacuum and right-difference light as the source has the following effects, it can suppress the special characteristics of the optical element

40 200402606 The reflectance or the reflection of the lens prevents the transmittance of the surface layer, etc.), can maintain the initial performance for a long time, and can provide a projection exposure device with high durability. This k also has the effect of a projection exposure device that prevents the heating of the optical element caused by the exposure light and can exhibit stable optical performance. The present disclosure is related to the subject matter contained in Japanese Patent Application No. f 2002-1 69496 filed on June n, 2002, and the entirety of the disclosure is explicitly included as a reference. [Brief description of the drawings] ㈠Schematic part FIG. 1 is a diagram showing the overall configuration of a projection exposure apparatus according to a first embodiment of the present invention. FIG. Is a configuration diagram showing a projection optical system of a projection exposure apparatus according to a second embodiment of the present invention. Fig. 3 is a structural diagram showing a projection optical system of a projection exposure apparatus according to a third embodiment of the present invention. Fig. 4 is a view showing a flow of a low-absorptive gas near a V-block type reflection / mirror provided in a projection photon system and a 'charger' inside the third embodiment of the present invention. Fig. 5 'is a view showing a lens holding mechanism according to an embodiment of the present invention. Fig. 6 is a perspective view showing a main part of a configuration of an optical element for supplying a low-absorptive gas to a fourth Buchmann-type optical element of the present invention. Fig. 7 is a diagram showing the main components of an optical element for supplying a low-absorptive gas to the fourth embodiment of the present invention. 200402606

',', And Yan Zuo are perspective views of the components of the gas supply pipe A A ^ ', μ installed in the gas supply pipe according to the fourth embodiment of the present invention, and the duct is used. ° 彡, a perspective view showing a configuration in which a shield plate is provided in the catheter of FIG. 8. ° 糸 is a perspective view showing a structure in which another shielding plate is provided in the duct of FIG. 8. # 分 is a perspective view showing a structure in which a diffuser plate is provided in the conduit of FIG. 8 is a perspective view showing a structure in which a mesh plate is provided in the conduit of FIG. 8

FIG. 14 is a perspective view showing a configuration in which a filter plate is provided in the duct of FIG. 8 and FIG. 14 is a perspective view showing a main part of a configuration for supplying a low-absorptive gas to an optical element according to a fifth embodiment of the present invention. Fig. 15 is a diagram showing a main part of a structure for supplying a low-absorptive gas to an optical element according to a fifth embodiment of the present invention.

Figure 16 is a flow chart showing the manufacturing process of electronic components. FIG. Π 'is a flowchart showing the processing of the wafer process of FIG. 16.代表 Element representative symbol 1: Light source 2: Beam matching unit chambers 3, 14, 22: Refractive lens 4, 5, 1, 3, 15: Relay lens 6, 114, 192. Supporting member 200402606 7, 23, 34, 45, 69, 13, 141, 143, 151, 16 and 163, 166, 169: Gas supply pipes 8, 24, 70, 132, 142, 144, 152, 162, 165, 168, 170: Low-absorption gas supply 7, 8, 69, 70, 163, 165, 166, 168: Gas supply mechanisms 9, 25, 35, 46, 7 and 133, 145, 153, 171: Exhaust pipes 10, 26, 72, 134, 146, 154, 172: Gas exhaust unit 11: Lighting system room 1 2: Diffractive optical element 16: Fly-eye lens 1 7: Open aperture system 18, 20, 21: Relay lens, etc. 9: Field of view aperture 27: Photomask 28: mask stage 29: mask stage 30: mask stage chamber 31, 40: moving mirror 32, 42: laser interferometer 33, 41: transmission window 36, 43: anti-vibration device 37: wafer ( Substrate) 38: Wafer stage 39: Wafer tray

43 200402606 44: Wafer stage chamber 50: Lens barrel (projection optical system) 51, 52, 54, 55, 57 to 64: Lens 53, 113, 201: V block mirror 53a, 113a, 201a: Upper reflecting surface 53b, 113b, 201b: lower reflecting surface 56, 117: concave mirror (concave mirror) 65: wing member 66, 67, 68: film member 80: transparent plate 100: first lens barrel 101: second mirror Tubes 110, 111, 112, 115, 116, 118, 119 ~ 126, 127, 190: lenses 110a, 110b, 112a, 112b, 118a, 118b, 127a, 127b: holding mechanism

Ilia, 111b, 115a to 117a, 115b to 117b, 119a to 126a, 119b to 126b: holding mechanism 1 3 0, 1 4 0, 1 50: space 141, 142, 143, 144: first gas supply mechanism 151, 152: second gas supply mechanism 160: airtight spaces 164, 167, 221: gas ejector (blowing mechanism) 1 9 0 e: flat portion 44 200402606 1 91: sealing material 193: second holding member 193a: protruding portion 194 : Bolts 195, 196: Washers 197: Nut piping 202, 203, 211, 221, 223: 4 of 204, 205: Air supply cover 206, 207, 214, 215: Shielding plate 213: Funnel-shaped conduit 213a: Duct opening 216: diffuser plate 217: screen plate 218: purification filter plate 222, 224: piping for auxiliary air supply

BMU: Beam matching unit IL: Illumination optical system PL: Projection optical system GS1: Low absorption gas GS2: Outside air 45

Claims (1)

200402606 Patent scope of application and application ... An exposure device that illuminates a photomask with exposure light, and transfers the photomask 2 pattern image onto a substrate, which is characterized by having a winter 2 response mechanism for A gas containing an inert gas or a rare gas as a main component is supplied to an optical path space through which the exposure light passes, and the gas supplied to the optical path 4 γ ^, ^ to ^, and one by one contains hydrogen of a predetermined concentration. . 2. The exposure device according to item 1 of the scope of patent application, which has a moonlight car system and uses the exposure light to illuminate the photomask; a t-shirt optical system for transferring the pattern image onto a substrate ; And a reflective optical TL component, which is disposed on at least one of the illumination optical system or the projection optical system to reflect the exposure light; at least a part of the optical path space is a space containing the reflective optical element. 3. The exposure device according to item 1 of the patent application scope, which includes: "", "Moonlight 4 *" system, which illuminates the photomask and projection optical system with the exposure light for transferring the pattern image On the substrate; where the illumination optical system or the projection optical system ^ / is, ^ (is and ^ has a plurality of optical path spaces independent of each other; a gas supply mechanism, which is supplied to the plurality of optical paths respectively The gas contains a predetermined concentration of hydrogen. Two rooms 4. An exposure device is used to illuminate the photomask with exposure light. 46 2UU402606 The pattern image on the photomask is transferred to the upper gas supply mechanism. ： ， Supply an inert gas &quot; ::: The optical path space through which the light passes ^ The component m and the "special optical element among a plurality of optical elements arranged in the optical path space with M are used to blow out the gas. 5. If the 4th mechanism of the scope of the patent application is for the optical element, ^ 4 means that the ^ &amp; 70% of the blown oxygen sculpture is different from the airflow of the body produced by the gas supply mechanism. gas Among them, there are 6 gas rectifiers which can be used for the gas from the gas, such as the scope of patent application: 4 rectifiers, which are placed in the gas supply port 4 of the blow-out mechanism. The airflow is slowed down or homogenized. 7. If the scope of patent application is g, 4 auxiliary blow-out trips, 尨-〗, Youyi Zhitangjia, have a stack structure to follow the air blown out of the gas household and the lice group. You should sigh ^ L to supply the gas. The device such as the ^ device of the 7th scope of the patent, which is at the gas supply port of the structure and the auxiliary # 少 一 古 独 屻The J gas of the gas supply port of the human body is further provided with a rectifying mechanism to reduce or uniformize the air flow of the body blown from the gas supply port. The exposure device around item 6, in which the mouth should be around. The method of the female side in the gas supply is 10.% of the patent application of the exposure device in item 6, its hunger mechanism has approximately leaked M formally strong * Inch-shaped ^ 官 部, so that the downstream side of the expanded square eight 1 in this gas The supply port is expanded. 1 knife 402606 1 1 · If the exposure device of the scope of patent application No. 10, a shielding plate is provided, and a part of the opening portion of the duct is closed. 12. If the scope of patent application is No. 10 In the exposure device, a plurality of diffusion plates are provided inside the duct portion to rectify the gas flow of the gas. 13. The exposure device according to item 10 of the patent application scope, wherein a mesh plate is provided in the opening portion of the duct portion. For example, the exposure device of the scope of application for patent No. 10, wherein a perforated plate having a plurality of through holes is provided at the opening of the sacral catheter portion. 15. The exposure device according to item 10 of the patent application scope, wherein a purification filter plate is provided at the opening of the duct portion. 16. The exposure device of any one of items 4 to 15 of the patent rail as in Shenshen, among which 'I arrange a plurality of gas of the blowing mechanism to the optical element for 1 month. As for the scope of patent application, Gan + 1 π, π A snail-exposed jig is further provided with an exhaust mechanism having a Weng Yiye M. nr, and a limb expulsion opening, and the air-bone ejection opening is relative to the blow-out mechanism. The limb supply port is arranged at a position where the learning element is roughly symmetrical. 18. According to the Exposure Agency of any one of the 13th scope of the scope of patent application, wherein the specific optical element is an optical element with a "", a yam film. 19. If the scope of patent application First, among them, the exposure device with any one of the exposure device illumination optical system projection optical system * especially using light to transfer the pattern image; and at least one of the 200402606 optical element system is provided in the illumination The optical system or the projection optical element is used to reflect the light used for the reflection of the exposure% of the optical element \ 2 of any of the patent application scope items 4 to 15 where 'the gas contains a predetermined concentration of hydrogen ^ ^ Patent No. 11 first ~ Any of the U-items should be exposed to the gas system inert gas in the light path space. The exposure device of any one of items 1 to 3 of the scope of 22 patent applications 1. The concentration of lice is less than about 10% of the partial pressure ratio. 23. If the patent application covers an exposure device of 20 items, in which the randomness / chenity is below about 10% of the partial pressure ratio. This type of light is used to illuminate the photomask with exposure light. The first mask = pattern image is transferred to the substrate. It is characterized by: Optical Path Space, Isolation '2nd Space · 4 and Does Not Contain the Reflective Optical Element, The first gas supply machine hibiscus, Luo, and Buzuo m ~ will be dominated by inert gas or rare gas; the knife 1 gas is supplied to the first space; and the second gas supply mechanism is supplied to the second space. The second gas f 25 :: The exposure device of the 24th scope of the patent application, wherein the supply amount of the first gas in the door space is the same as the supply of the milk in the second space. The amounts are not the same. 26. The exposure apparatus according to item 24 of the scope of patent application, wherein the main components of the first gas and the second gas are different. 27. If the exposure device according to item 24 of the patent application is applied, the first gas contains hydrogen of a predetermined concentration. One of the "The 28.-An exposure method, which is illuminated with exposure light" The pattern image on the photomask is transferred to the substrate, which is characterized by: Jiang Jiang, · The space of the light path through which the exposure light passes Supply a gas whose main component is an inert and rare gas, and make the gas supplied to the optical path: the body or at least a part of the gas contain a predetermined concentration of hydrogen. &lt; 29. — An exposure method, which illuminates the mask with exposure light, and the pattern image on the mask is transferred to the substrate, which is characterized by: & light_ supplies the space of the light path through which the exposure light passes A gas mainly composed of inert gas and a rare gas; Qi Gu: Or blow out the gas to a specific optical element of a plurality of optical-π τ arranged in the optical path space. 30. An exposure method that illuminates a photomask with exposure light, and transfers a pattern image on the photomask to a substrate, characterized in that it is isolated from the optical path space through which the exposure light passes. Reflected light_ The first space of the 7L element and the second space that does not include the reflective optical element, the i-th gas containing inert gas or rare gas as the main component is supplied to the first space; A different second gas is supplied to the second space. 31. An exposure method is to illuminate a photomask with exposure light, and transfer the image on the 50 200402606 photomask to a substrate. It is characterized by: · Expose the substrate while blowing out gas to a specific p &lt; u domain. It is more arranged on the Λ umbrella ra, 4 specific area / exposure light path where at least 丨 the optical element light passes As wide. A method for manufacturing electronic components including micro-32.- is characterized by a photolithography process; the photolithography process uses an exposure device in any of the scope of patent applications Nos. 1-27 and will be formed in a photomask The pattern is transferred to the substrate. , One, schema: as the next page. 51