TW200402586A - Reflection-transmission type liquid crystal display device and method for manufacturing the same - Google Patents

Abstract

Disclosed are a liquid crystal display (LCD) device and a method for manufacturing the LCD device. The LCD device has a substrate including a display region and a pad region located in a periphery of the display region, the display region having a transparent electrode, the pad region having a pad electrode. The transparent electrode and the pad electrode are formed from the same layer. A reflective electrode having a transmission window exposing a portion of the transparent electrode is formed on the transparent electrode. The manufacturing process can be simplified because the transparent electrode is directly connected to the reflective electrode. Since the pad electrode is formed of the same layer as the transparent electrode, no metal corrosion occurs to thereby increase the pad reliability during COG bonding.

Description

200402586 发明 Description of the invention (The description of the invention should state: the technical field to which the invention belongs, the prior art, the content, the embodiments, and the drawings are briefly explained. A display device and a manufacturing method thereof are particularly related to a reflection-transmission liquid crystal display device and a manufacturing method thereof. In this method, a pad electrode is made of the same layer of a transparent electrode, thereby improving the reliability of the pad. [Prior Art 3 Background of the Invention 10] In flat panel devices, liquid crystal display (LCD) devices are widely used in a variety of electronic devices because they are light and thin, have low power consumption, and can display high-quality images. LCD devices generally include transmissive, reflective, and reflective-transmissive. A transmissive LCD device uses a light source (such as a backlight) to display information. The 15-type LCD device uses natural light to display information. Reflective-transmissive LCDs are placed in a dark room without a light source when needed, and operate in transmission mode to display images, and at other times operate in reflective mode to display images by reflecting incident light. At present, thin film transistors and liquid crystal display devices (TFT_LCDs) are widely used. The structure of the TFT-LCD is that electrodes are provided on the two substrates, and a thin film transistor (TFT) is roughly formed in a pixel region on one of the substrates. The TFT is used to switch the voltage applied to the electrodes. 1A to 1C are sectional views showing a conventional reflection-transmission type liquid crystal display device. In the m1C diagram, the reflective-transmissive liquid crystal display device is an amorphous silicon type TFT-LCD with a bottom-gate structure. Fig. 1A shows a display area of a liquid crystal display device, and a thin film transistor 15 is formed there. FIG. 16 and FIG. 1C show the gate pad area and the data pad area of the liquid crystal display device, respectively. Referring to FIGS. 1A to 1C, after depositing a first metal layer on a substrate 10 made of insulating material such as glass, quartz, or 5 sapphire, the first metal layer is patterned by lithography using a first photomask to form a gate wiring. . The gate wiring includes a gate wire (not shown) extending in the first direction, a gate electrode 12 branched from the gate wire, and a gate pad 丨 丨 connected to the end of the gate wire for applying scanning Voltage to gate 12. A gate insulating layer 14 composed of 10 silicon nitride is formed on the substrate 10, a gate wiring is formed thereon, and then an amorphous silicon layer and a doped amorphous silicon layer are sequentially formed on the gate insulating layer 14. Subsequently, the amorphous silicon layer and the n + doped amorphous silicon layer are patterned by lithography using a second photomask to form an active pattern 16 and a resistive contact pattern 18. As such, the active pattern 16 is composed of amorphous silicon, and the resistive contact pattern 18 is made of n + doped amorphous stone. After the second metal layer is deposited on the resistive contact pattern 18 and the gate insulating layer 14, the first metal layer is patterned by a lithography method using a third photomask to form a data wiring. The data wiring includes a data line (not shown in the figure) extending in a second direction perpendicular to the first direction, source / drain 20 and 22, which are branched from a 20-meter material line, and a data lining , Which is connected to the end of the data line for applying an image voltage to the source electrode 20. Then, a portion of the resistive contact pattern 18 exposed between the source electrode 20 and the drain electrode 22 is removed by dry etching to form a channel region of the thin film transistor. After the inorganic passive layer 25 is formed on the data wiring and the gate insulating layer 14, the part 6 200402586 (ii) Description of the invention The inorganic passive layer 25 divided on the drain electrode 22 is removed by a lithography method using a fourth photomask. Here, the pad contact holes 33 and 35 that expose the gate pad 11 and the data pad 19 are formed at the same time. After the organic passive layer 26 is formed on the entire surface of the resulting structure, the organic 5 passive layer 26 uses a fifth mask on the drain electrode 22 and the pad area, and is removed by exposure and development methods, thereby forming the first exposed drain electrode 22 Contact hole 28. At the same time, a plurality of slits for scattering light are formed on the surface of the organic passive layer 26 using a sixth mask. In other words, the first contact hole 28 and the notch are formed simultaneously by a double exposure method using two masks but by a single development method. 10 After depositing a transparent conductive layer of indium tin oxide (ITO) or indium zinc oxide (IZO) on the resulting structure, the transparent conductive layer is patterned by a lithography method using a seventh photomask to form a transparent electrode 30. Connected to the drain electrode 22 through the first contact hole 28. A buffer layer 32 made of an inorganic material such as silicon nitride is formed on the entire surface of the resulting structure 15 (including the transparent electrode 30), and then the buffer layer 32 is removed by lithography using an eighth photomask, and the formed part is exposed. The second contact hole 34 of the drain electrode 22. After depositing a reflective layer made of a highly reflective metal such as aluminum (Al-Nd) on the second contact hole 34 and the buffer layer 32, the reflective layer uses a ninth photomask to make a pattern by 20 lithography. A reflective electrode 36 is formed, which is connected to the drain electrode 22 via the second contact hole 34. The reflective electrode 36 has a reflective window to expose the lower transparent electrode 30. The gate pad electrode 38 and the data pad electrode 40 are made at the same time. The gate pad electrode 38 and the data pad electrode 40 are connected to the gate pad 11 and the data pad 19, respectively. 7 200402586 发明, description of the invention According to a conventional method, a reflective-transmissive amorphous silicon type thin film transistor _ liquid crystal display device is manufactured using a nine-light mask. At this time, the buffer layer 32 made of nitride stone is formed between the transparent electrode 30 and the reflective electrode 36 to prevent electric corrosion caused by the direct contact between the transparent electrode 30 and the reflective electrode 36. Especially when the transparent electrode 5 is the bottom layer of the multilayer pixel electrode, the insulating layer must be interposed between the transparent electrode 30 and the reflective electrode 36 to prevent the reflective electrode from being developed during the development of the photoresist layer used to pattern the reflective electrode. 36 peeled off due to a voltage difference between the transparent electrode 30 and the reflective electrode%. As a result, an additional lithography method is needed to etch the insulating layer to form a contact hole connecting the reflective electrode 36 to the thin film transistor, which complicates the manufacturing process due to 10. Since the buffer layer 32 is located above the organic passive layer 26, the buffer layer% needs to be made by a low temperature chemical vapor deposition (CVD) method. In addition, since the pad electrodes 38 and 40 are made of the same layer of the reflective electrode 36, the metal may be corroded during the subsequent COG bonding process. 15 In a pixel electrode having a transparent electrode as a bottom electrode, the buffer layer is made of organic metal instead of silicon nitride to prevent metal corrosion and peeling of the reflective electrode. However, this method is complicated because at least one photomask is needed to pattern the buffer layer. In addition, since the organic buffer layer is located above the organic passive layer, the reflectance of the reflective electrode is reduced, and it is difficult to pattern the buffer layer. In addition, because the pad electrode and the reflective electrode are made of the same layer, the metal is corroded during the subsequent COG connection process. Figures 2A to 2C are sectional views showing another conventional reflection-transmission liquid crystal display device. In FIGS. 2A to 2C, the reflective and transmissive liquid crystal display device has a structure in which a transparent electrode directly contacts a reflective electrode. Fig. 2A shows a liquid crystal 200402586. Description of the Invention A display area of a display device, and a thin film transistor 55 is formed in the display area. Figures 2b and 2C show the gate pad area and data summary area of the liquid crystal display device, respectively. Referring to FIGS. 2A to 2C, after depositing a metal layer on a substrate (made of an insulating material such as glass 5), the first metal layer is patterned by a photolithography method using a first photomask to form a gate wiring. The gate wiring includes a gate line (not shown) extending in the first direction, a gate electrode 52 branched from the gate line, and a gate pad Η connected to the end of the gate line to apply a scanning voltage to the gate electrode 52. A gate insulating layer 54 made of silicon nitride is formed on the substrate 50 (on which a gate 10 wiring is formed), and then an amorphous silicon layer and an n + doped amorphous silicon layer are sequentially formed on the gate insulating layer 54. Subsequently, the amorphous silicon layer and the n + doped amorphous silicon layer are patterned by lithography to form an active pattern% made of amorphous silicon and a resistive contact pattern 58 made of n + doped amorphous silicon. After the second metal layer is deposited on the resistive contact pattern 58 and the gate insulating layer 54, the second metal layer is formed by using a third photomask to make a pattern by lithography to form a data wiring. The data wiring includes a data line (not shown) extending in a second direction perpendicular to the first direction, and the source / drain electrodes 60 and 62 'branched from the data line and connected to the end of the data line for applying an image voltage to Source pad for source 60. Subsequently, a portion of the resistive contact pattern 58 exposed between the source electrode 60 and the drain electrode 62 is removed by dry etching to form a channel region of the thin film transistor. After the inorganic passive layer 65 is formed on the data wiring and the gate insulating layer 54, the portion of the inorganic passive layer 65 above the gate electrode 62 is removed by a lithography method using a fourth photomask. Here, the contact holes 69 and 71 for exposing the gate pad 51 and the data pad 59 are made at the same time. After forming the organic passive layer 66 on the entire surface of the resulting structure 200402586 (the invention description), the organic passive layer 66 uses the fifth and sixth reticles to make a pattern by exposure and development methods, so as to form the contact of the exposed drain electrode 62 at the same time. The hole 68 and a plurality of notches. After depositing five reflective layers made of a metal with high reflectance such as Al-Nd on the resulting structure, the reflective layer is patterned by lithography using a seventh mask to form reflective electrodes 70 and gate pads. The electrode 74 and the data pad electrode 76. The reflective electrode 70 is connected to the drain electrode 62 via a contact hole 68. The gate pad electrode 74 and the data pad electrode 76 are connected to the gate pad 51 and the data pad 59 via contact holes 69 and 71, respectively. 10 After a transparent conductive layer made of IZO is deposited on the reflective electrode 70, the transparent conductive layer is patterned by lithography using an eighth mask to form a transparent electrode 72 'which directly contacts the reflective electrode 70. The area where the transparent electrode 72 is present without the reflective electrode 70 forms the transmission window 2. According to the foregoing method, since the transparent electrode 72 is directly in contact with the reflective electrode 70 15 without a buffer layer, compared with the conventional method of FIG. 1, a photomask can be eliminated in the manufacturing process. Since the transparent electrode 72 needs to be provided as a top layer, peeling of the reflective electrode 70 does not occur. However, electrical corrosion usually occurs between the reflective electrode 70 and the transparent electrode 72. In addition, when the transparent electrode 72 is made of ιζο, since IZ0 reacts with the etchant or the chromium etchant, the transparent electrode 72 and the reflective electrode 70 will be patterned at the same time. In addition, the transparent electrode 72 must be located on the top electrode, and directly contact the reflective electrode 70 and the transparent electrode 72. L SUMMARY OF THE INVENTION 3 Summary of the Invention The present invention solves the aforementioned problems, so one object of the present invention is to provide a 10 200402586, a description of the invention of a liquid crystal display device in which the transparent electrode system directly contacts the reflective electrode, and the manufacturing process is simplified, and the pad electrode system consists of The transparent conductive layer of the transparent electrode is made of 俾 to improve the reliability of the pad. Another object of the present invention is to provide a method 5 for manufacturing a liquid crystal display device, in which the transparent electrode is directly in contact with the reflective electrode, which simplifies the manufacturing process, and the pad electrode is made of a transparent conductive layer of the transparent electrode, which improves the reliability of the pad. In order to achieve one of the objectives of the present invention, a liquid crystal display device is provided. The liquid crystal display device includes a substrate, the substrate has a display area on which pixels are formed, and a pad area is located around the display area, and the display area is transparent. Electrode, the pad region has a pad electrode, the transparent electrode and the pad electrode are made of the same layer, and a reflective electrode is formed on the transparent electrode, and has a transmission window exposing a part of the transparent electrode. According to a preferred embodiment of the present invention, a barrier metal layer having the same shape as that of the reflective electrode is formed between the transparent electrode and the reflective electrode. The barrier layer is made of a material whose etch rate is substantially equal to the remaining etching rate of the reflective electrode. The pixel includes an amorphous stone type thin film transistor. The pixel includes an amorphous stone type thin film transistor. The transparent electrode includes indium tin oxide (ITO), the reflective electrode includes aluminum-titanium (A1_Nd), and the barrier metal layer 20 The pattern includes molybdenum-crane (Mo_W). In addition, in order to achieve one of the objectives of the present invention, a liquid crystal display device is also provided. The liquid crystal display device includes a substrate having a display area and a pad area located around the display area. A thin film transistor (TFT) is formed on the substrate display area. The TFT includes a gate electrode, first and second electrodes, and an active pattern. 200402586 发明, description of the invention A passive layer is formed on the TFT and the substrate, the passive layer has a hole to expose the second electrode; a transparent electrode is formed on the passive Layer display area; a pad electrode is formed on the passive layer pad area, the pad electrode is made of the same layer as the transparent electrode; a reflective electrode is formed on the transparent electrode, and there is a transmission ®storm 4 transparent A part of the electrode; and a barrier metal layer pattern is formed between the transparent electrode and the reflective electrode, and its shape is the same as the shape of the reflective electrode. According to a feature of the present invention, the transparent electrode is formed on the hole and the passive layer, and thus is connected to the second electrode through the hole. According to a second feature of the present invention, the transparent electrode is formed only on the passive layer 10 (except for the hole), and the barrier metal layer pattern and the reflective electrode are formed on the hole and the transparent electrode, and thus are connected to the second electrode through the hole. According to still another feature of the present invention, the barrier metal layer pattern and the reflective electrode are formed only on the transparent electrode, except for the hole. In order to achieve another object of the present invention, a method for manufacturing a liquid crystal display 15 device is provided. The method includes the following steps: forming a transparent conductive layer on a substrate; the substrate has a display area and a lining area around the display area; Forming a reflective layer on a substrate having a transparent conductive layer; annealing the reflective layer to prevent the reflective layer from peeling off; and patterning the reflective layer to form a reflective electrode. 20 According to a specific embodiment of the present invention, argon (A0 plasma) is performed. Treating 俾 enhances the adhesion between the transparent conductive layer and the lower layer. The method further includes the following steps: before the step of forming the reflective layer, patterning the transparent conductive layer to form a transparent electrode on the display area and a pad electrode on The method further comprises the steps of: patterning the transparent conductive layer in the step of 200402586 (2), and explaining the invention step, annealing the transparent conductive layer to obtain the pattern uniformity of the transparent conductive layer; and baking the transparent conductive layer hard. The layer is used to improve the adhesion of the transparent conductive layer.The method further includes the following steps: Then, the transparent conductive layer is patterned to form a transparent electrode on the display area and a pad electrode on the pad area. The reflective electrode, transparent electrode, and pad electrode are made of a photomask. The photomask is a half-tone photomask or a slit photomask. The annealing step of the reflective layer is performed at a temperature higher than about 100 ° C for more than about 30 minutes. The method further includes before the step of forming the reflective layer The step of forming a barrier metal layer is formed. When the reflective layer is patterned, the barrier metal layer is patterned at the same time to form a barrier metal layer pattern. The transparent conductive layer, the barrier metal layer, and the reflective layer are at about 2 (rc to about Made at 150 ° C. The material included in the barrier metal layer has an etching rate similar to that of the reflective layer. The transparent conductive layer contains indium tin oxide (Ιτ〇) 15, the barrier metal layer contains molybdenum-tungsten (Mo-W), And the reflective layer includes aluminum-titanium (Al-Nd). According to a specific embodiment of the present invention, a method for manufacturing a liquid crystal display device is provided. The method includes the following steps: forming a gate electrode on a display area of a substrate; A gate pad is located on the substrate on the periphery of the display area on the pad area 20; a gate insulating layer is formed, so the gate insulating layer covers the gate electrode and the gate pad; an on / off active pattern and a resistive contact pattern are insulated on the gate Layer; forming a first electrode and a second electrode on the resistive contact pattern, and simultaneously forming a data pad on the gate insulating layer of the pad area; forming a passive layer on the first and second electrodes and the data pad On the pad and the gate insulation layer; etch the passive layer 俾 13 200402586 玖, description of the invention to form the first, second and third contact holes which are used to expose the second electrode gate pad and the data pad respectively; forming a transparent electrode on The display area, and-a gate pad electrode and a data pad electrode are formed at the same time, which are used to contact the gate pad and the data through the second and third contact holes, respectively. Layer on the transparent electrode and the pad electrode; annealing the reflective layer to prevent the peeling of the reflective layer; and patterning the reflective layer and the barrier metal layer to form a barrier metal layer pattern and a reflective electrode. According to another embodiment of the present invention, a method for manufacturing a liquid crystal display device is provided. The method includes the following steps: forming an active pattern on a 10 substrate; forming a gate insulating layer on the substrate with the active pattern; forming 1 pole forms the active pattern position on the gate insulating layer; sequentially forms the first and second interlayer dielectric layers on the gate and the gate insulating layer; engraved the first and second interlayer dielectric layers and the gate insulating layer, forming The contact holes are used to expose the first and second regions of the active pattern, respectively; forming the first and second electrodes, which are connected to the first and second regions respectively through the contact 15 holes; forming a passive layer on the first and second regions On the electrode and on the second interlayer dielectric layer having the first and second electrodes; forming a through hole for the passive layer to expose the second electrical layer; forming a transparent electrode on the passive layer, and sequentially forming a barrier metal layer and A reflective layer is on the transparent electrode, and the reflective layer is annealed to prevent the peeling of the reflective layer; and a pattern of the reflective 20 layer and the barrier metal layer is patterned to form the barrier metal layer and the reflective electrode on the transparent electrode.According to the present invention, a multilayer pixel electrode of a liquid crystal display device has a structure in which the transparent electrode system is formed as a lower layer, and the transparent electrode directly contacts the reflective layer. It is preferable to prevent electricity from being generated between the transparent electrode and the reflective electrode.

14 200402586 发明. Description of the invention The barrier metal layer pattern with the etch rate and the reflection electrode etching rate is interposed between the transparent electrode and the reflective electrode. Therefore, by comparing the conventional methods (the buffer layer is formed between the transparent electrode and the reflective electrode in the gastric method), at least one photomask is reduced, thereby simplifying the manufacturing process. In addition, since the pixel electrode is formed using a single photomask when the half photomask 5 or the slit photomask is used, the manufacturing process can be further simplified. In addition, after the reflective layer is deposited, the annealing of the reflective layer is performed at about 2000 t: temperature for about 1 to about 2 hours, thereby preventing peeling of the reflective electrode in a pixel electrode with a transparent electrode as a bottom layer. 10 In addition, the 'pad electrode is made of the same layer of a transparent electrode (conducting oxide layer), so metal corrosion does not occur during the COG connection method, so the reliability of the liner can be improved. The drawings briefly explain the foregoing and other objects and advantages of the present invention by referring to the following 15 details in detail with reference to the drawings, which will be self-explanatory. In the drawings: Figures 1A to 1C are cross-sectional views showing conventional reflection-transmissive liquid crystals. Display device; FIGS. 2A to 2C are sectional views showing another conventional reflective-transmissive liquid crystal display device; 20 FIGS. 3A to 3C are sectional views showing a reflective-transmissive liquid crystal display according to a first embodiment of the present invention 4A to 10C are sectional views illustrating a method for manufacturing a reflection-transmission liquid crystal display device according to a first embodiment of the present invention; FIG. 11 is a sectional view showing a second embodiment according to the present invention 15 200402586 (1) Description of the invention A reflection-transmission type liquid crystal display device; FIG. 12 is a sectional view showing a reflection-transmission type liquid crystal display device according to a third embodiment of the present invention; FIG. 13 is a sectional view showing a reflection-transmission type liquid crystal display device according to the present invention The fifth embodiment of the fourth embodiment is a reflection-transmission type liquid crystal display device. FIGS. 14A to 14G are cross-sectional views illustrating the production of a reflection-transmission method according to a fourth embodiment of the present invention.液晶 15 is a sectional view showing a reflection-transmission type liquid crystal display device according to a fifth embodiment of the present invention; and 10 1016 is a sectional view showing a sixth embodiment according to the present invention Reflection-transmission liquid crystal display device. L-poor: Detailed description of the preferred embodiment of Mode 3 Hereinafter, a liquid crystal display device and a method for manufacturing the same according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Figs. 3A to 3C are sectional views showing a reflection-transmission type liquid crystal display device according to a first embodiment of the present invention. The liquid crystal display device of FIGS. 3A to 3C includes an amorphous silicon type thin film transistor having a bottom gate structure. 20 Figure 3A shows the display area where a thin film transistor is formed. Figures 3B and 3C show the gate and data areas, respectively. Referring to FIGS. 3A to 3C, a first metal layer such as a gate wiring made of chromium (Cr) or aluminum (A1-Nd) is formed on an insulating substrate 100 made of glass, quartz, or sapphire. The gate wiring includes a gate line (not shown in the figure) extending in the first direction. 16 200402586 发明, description of the invention, the gate 102 of the thin film transistor 150 branched from the gate line, and the gate line connected to the end of the gate line for applying a scanning voltage Gate pad 104 to gate 102. The gate insulating layer 106 is formed on the gate wiring and the substrate 100. The gate insulating layer 106 contains an inorganic material such as nitride. 5 The active pattern and the resistive contact pattern 110 are sequentially formed on the gate insulating layer 106, where the gate electrode 102 is located. The active pattern 108 includes amorphous silicon, and the resistive contact pattern 110 includes n + doped amorphous silicon. In addition, a data wiring made of a second metal layer such as chromium (Cr) or aluminum (A1) is formed on the gate insulating layer 106. The data wiring includes data lines (not shown in the figure) extending in 10 second directions perpendicular to the first direction, first and second electrodes in and 114, and ends connected to the data lines for applying an image voltage to the first electrode 112. The information pad 115. The first electrode ιΐ2 (source and drain) is branched from the data line and is stacked on the first region of the active pattern 108. The second electrode 114 (drain or source) is stacked on the second region, and the second region is opposite to the first region. 15 Hereinafter, the second electrode 112 is referred to as a "source" and the second electrode 114 is referred to as a "drain". In this way, a thin film transistor 150 is formed on the display area of the substrate 100, and includes the gate electrode 102, the gate insulating layer 106, the active pattern 108, the resistance contact pattern 110, the source electrode 112, and the electrode 114. 20 An inorganic passive layer 116 including silicon nitride and an organic passive layer 120 including an acrylic resin are sequentially formed on the data wiring and the gate insulating layer 106. The inorganic passive layer 116 is provided to maintain the reliability of the transistor and the pad and improve the strength of the COG connection. The organic passive layer 120 is preferably formed in the display area 17 200402586. Description of the invention The first contact hole 122 is formed above the drain electrode 114 through the inorganic passive layer 116 and the organic passive layer 120. Another electrode, such as a pixel electrode, may be formed on the inorganic passive layer 116, and may contact and connect the drain electrode 114 through the first contact hole 122. 5 In addition, the second contact hole 118 and the third contact hole 119 are formed over the gate pad 104 and the data pad u5 via the inorganic passive layer 116 and the gate insulating layer 106. Then, the gate pad electrode 125 and the data pad electrode 126 are formed, so that the knife directly contacts the gate pad 104 and the data pad 115 through the second contact hole 118 and the third contact hole 19. 10 The pixel electrode is made of a stacked structure. The transparent electrode 124 and the reflective electrode 130 are located in a pixel area defined by a gate line and a data line. The transparent electrode 124 includes a conductive oxide such as indium tin oxide (ITO), and the reflective electrode 130 includes a reflective metal such as Al-Nd. The pixel electrode receives the image signal from the thin film transistor 150, and uses a color filter substrate electrode (not shown in the figure) 15 to generate an electric field. In this case, the area above the transparent electrode 124 serves as a reflection window, and only the area where the transparent electrode 124 is located serves as a transmission window T3. According to a specific embodiment of the present invention, the blocking metal layer pattern 128 is further formed between the transparent electrode 124 and the reflective electrode 130 to prevent the formation of electrical 20 #. The barrier metal layer pattern 128 includes a metal having an etching rate similar to that of the reflective electrode 30 as far as a predetermined etchant for etching the reflective electrode 130 is concerned. The preferred blocking metal layer pattern 128 includes molybdenum (Mo-W), which is patterned and has a pattern similar to the shape of the reflective electrode 130. 18 200402586 发明 Description of the invention According to the conventional method, wherein the buffer layer is made of silicon nitride, or an organic material is formed between the transparent electrode and the reflective electrode. In this case, if the transparent electrode system is located below the reflective electrode, then Additional lithography is required to etch the buffer layer to form a contact hole connecting the reflective electrode to the drain electrode. The manufacturing process is more complicated. Preferably, according to a specific embodiment of the present invention, the barrier metal layer pattern 128 including a metal is formed between the transparent electrode 124 and the reflective electrode 130, and the transparent electrode 124 is electrically connected to the reflective electrode 130. In this way, the process of forming the contact holes connecting the reflective electrode 130 to the electrode 114 can be deleted, so that the lithography process can be reduced at least once compared to the conventional method. 10 In addition, according to this embodiment, the gate pad electrode 125 and the data pad electrode 126 are made of the same layer of the transparent electrode 124. In the conventional method, the pad electrode is made of the same layer of the reflective electrode made of metal, so when the pad electrode of the LCD panel is connected to external driver integrated circuits (ICs) by the COG method, metal corrosion occurs. As a result, the reliability of the gasket is deteriorated. 15 However, in this specific embodiment, during the COG connection, since the pad electrodes 125 and 126 are made of the same layer of the transparent electrode 124 including a conductive oxide, the pad electrodes 125 and 126 will not corrode, and the pad electrode is improved. Pad reliability. 4A to 10C are cross-sectional views illustrating a method of manufacturing a reflection-transmission type liquid crystal display device according to the _ specific embodiment of the present invention. Figures 20 4A, 5A, 6A, 7A, 8A, 9A and 10A show the display area where the thin film transistor is formed. Figures 4B, 5B, 6B, 7B, 8B, 9B, and 10B show the brake pad area and Figures 4C, 5C, 6C, 7C, 8C, 9C, and 10C show the data pad area. Referring to Figures 4A to 4C, after depositing the first layer on a substrate containing an insulating material (such as 19 200402586 玖, invention description glass, quartz, or ceramics), use the first photomask to photolithography the first metal Layers are patterned to form inter-wiring. The first metal layer includes chromium (Cr) with a thickness of about 500 Angstroms and aluminum (Ai-Nd) with a thickness of about 2500 Angstroms. The gate wiring includes a gate line (not shown) extending in the first direction, a gate 102 divided by five gate lines, and a gate pad connected to the end of the gate line to apply a scanning voltage to the gate 102. At this time, the side wall of the gate electrode 102 is preferably tapered. Referring to FIGS. 5A to 5C, silicon nitride is deposited on the entire surface of the substrate 100 (the gate wiring is formed thereon) by a plasma-enhanced chemical vapor deposition (PECVD) method to form a gate insulating layer. 1〇6. 10 An active layer such as an amorphous silicon layer is deposited on the gate insulating layer 106 by a PECVD method to a thickness of about 2000 angstroms, and then a resistive contact layer such as a doped amorphous silicon layer is deposited on the active layer by a PECVD method to about 5 〇〇angstrom thickness. Secondly, the active layer and the resistive contact layer are patterned by a lithography method using a second photomask to form the active pattern 108 and the resistive contact pattern 11 respectively. The active pattern 15 108 remains at the position of the gate electrode 102 of the gate insulation layer 106. Referring to FIGS. 6A to 6C, after depositing a second metal layer on the resistive contact pattern 110 and the gate insulation layer 106 to a thickness of about 1500 to about 4000 angstroms, the second metal layer is patterned by a lithography method using a third mask. The data wiring is formed. The first metal layer includes chromium (Cr), chromium-Cr (Al-Cr), or chromium-Cr (Al-Cr). The data wiring includes a data line (not shown) extending in a second direction perpendicular to the first direction, source / drain branches 12 and 114 branched from the data line, and a connection to the end of the data line for applying an image voltage to Data pad 115 of source 112. Subsequently, the resistive contact pattern 200402586 exposed between the source 112 and the drain 114 was removed by the reactive ion etching (RIE) method, and the active region exposed between the source 112 and the drain 114 was used as a thin film electrode. Channel area of crystal 15o. At this time, the gate insulation layer 106 is interposed between the gate line and the data line, thereby preventing the gate line and the data line from contacting each other. 5 In this embodiment, the active pattern 108, the resistive contact pattern 110, and the two-material wiring are made using two photomasks. However, the active pattern 丨 〇8, the resistance contact pattern 110, and the source / drain 112/114 can be made using a single photomask as described in Korean Patent Application No. 1998-49710, thereby reducing the production of a thin film with a bottom gate structure. Transistor-number of photomasks for liquid crystal display devices. The manufacturing method of such a thin-film transistor-liquid crystal display device will be described later using the same reference numbers of related documents as those of the specific embodiment. First, an active layer, a resistive contact layer, and a second metal layer are sequentially deposited on the gate insulating layer 106. After the photoresist layer is coated on the second metal layer, the photoresist layer is patterned by exposure and development methods to form a photoresist pattern (not shown) 15. The photoresist pattern includes a first part, a second part, and a third part. section. The first portion has a first thickness and is formed on a channel region of the thin film transistor. The second portion has a second thickness greater than the thickness of the first portion and is formed in the negative wiring area. The third part is the area where no photoresist layer is left. Then, the second metal layer under the third part, the resistive contact layer and the main 20 movable layer, the second metal layer under the first part, and a part of the thickness of the second part are etched away to form the second metal layer composition information at the same time. Wiring, a resistive contact pattern 110 composed of an n + amorphous silicon layer, and an active pattern 108 composed of an amorphous silicon layer. Second, remove the remaining photoresist patterns. In this way, the active pattern 108, the resistive contact pattern 110, and the source / drain 112/114 are simultaneously used. 21 200402586 发明 Description of the invention A single photomask is used. That is, referring to the 7Am nitrogen thallium is deposited on the entire surface of the substrate when the thin film transistor 150 is formed to a thickness of about 2000 angstroms, thereby forming the inorganic passive layer 116. The inorganic passive layer 116 can improve the reliability of the transistors 150 and 5 and 115. In addition, the inorganic passive layer 116 strengthens the connection strength of the integrated circuit during the subsequent cog connection. Subsequently, the inorganic passive layer 116 and the gate insulating layer 106 are etched and removed using a fourth photolithography method, thereby forming a fourth contact hole 117 for exposing the drain electrode 4 and a second contact hole for exposing the gate pad 104. 118, and a third contact hole 119 for 10 exposing the data pad 115. Referring to FIGS. 8A to 8C, a photosensitive organic material having a low dielectric constant is coated on the entire surface of the resulting structure including the fourth, second, and third contact holes 117_119 to a thickness greater than 2 micrometers, thereby forming an organic passive layer 12 〇. Since the organic passive layer 120 can prevent parasitic capacitance from being formed between the data wiring and the pixel electrode 15 (to be formed), the pixel electrode can be formed, and the gate line and the data line can be stacked to form a thin film transistor and liquid crystal with high pore efficiency. Display device. A fifth photomask (not shown) having a pattern corresponding to the first contact hole 122 is disposed above the organic passive layer 120 to form a first contact hole 122 penetrating the organic passive layer 120, the organic passive layer 12 and the drain electrode. The upper part of 114, 20 and the organic passive layer 120, and the upper part of the gate pad 104 and the data pad 115 are mainly exposed by the full exposure method. A sixth photomask (not shown) forming a microlens is disposed above the organic passive layer 120, and then a portion of the side of the first contact hole 122 of the organic passive layer 120 is subjected to a second exposure by lens exposure processing. Subsequently, a solution including tetramethylammonium hydroxide (TMAH) was used to perform the display 200402586, and the invention was processed to form a first contact hole 122 and a plurality of slits 123. The first contact hole 122 extends from the fourth contact hole 117 to expose the drain electrode 114. In this example, the organic passive layer 120 above the gate pad 104 and the data pad 115 is partially removed. 5 Then, a hardening treatment is performed at a temperature of about 130 to 230 for about 100 minutes, and then the organic passive layer 120 is reflowed and hardened. Referring to FIGS. 9A to 9C, an argon (Ar) plasma treatment is performed on the organic passive layer 120 to improve the adhesion between the organic passive layer 120 and a transparent conductive layer to be formed thereon. Secondly, a transparent conductive layer 10 made of a conductive material such as IT0 is deposited on the entire surface of the resulting structure at a temperature below about 200 ° C. Preferably, the transparent conductive layer is deposited at a temperature of about 20 to about 150 ° C and has a thickness of about 400 Angstroms. Subsequently, the transparent conductive layer is annealed at about 10 ° C. for more than 30 minutes and preferably at 200 C for about 1 to about 2 hours, thereby improving the uniformity of the pattern of the transparent conductive layer. 15 Then at 12 0 C The transparent conductive layer is subjected to a hard baking process at a temperature of more than 30 minutes to increase the adhesion between the transparent conductive layer and the photosensitive layer pattern (which will be formed by the subsequent lithography method). The seventh layer is used for the transparent conductive layer. The transparent electrode 124 is formed by patterning by lithography and wet etching. The transparent electrode 124 is connected to the drain electrode 114 through the first contact hole 122. At the same time, a gate pad electrode 125 and a data pad electrode 126 are formed. The pad electrode 125 is connected to the gate pad 104 via a second contact hole 118, and the data pad electrode 126 is connected to the data pad 115 via a third contact hole 119.

Referring to FIGS. 10A to 10C, the barrier metal layer is at about 20 to about 150 ° C 23 200402586 玖, description of the invention, and preferably about 50. (: The temperature is deposited on the entire surface of the obtained structure (including the transparent electrode 124 and the lining electrodes 125 and 126) to a thickness of about 500 angstroms. The barrier metal layer contains a metal such as molybdenum-tungsten (Mo-W), and forms a reflective electrode for etching After the reflective layer, the etching layer has an etching rate similar to that of the reflective electrode. 5 Then, on the barrier layer, the reflective layer composed of aluminum (Al-Nd) is at about 20 to about 150 ° C, preferably about 50 ° C temperature is formed to a thickness of about 1500 angstroms. Second, the reflective layer is annealed at a temperature higher than 100 ° C for more than about 30 minutes, and preferably annealed at a temperature of about 200 for more than 1 hour. It is peeled off. Then, the reflective layer and the barrier metal layer are patterned using the eighth photomask through lithography 10 and the wet engraving method, thereby forming the reflective electrode 130 and the barrier metal layer pattern 128. If the multilayer pixel electrode uses a transparent electrode as the For the lower electrode, when the photosensitive layer is developed with TMAH developing solution to pattern the reflective layer, the reflective layer is easily peeled off by the potential difference between the transparent electrode containing the oxide and the reflective layer. After the reflective layer is deposited, the reflection The layer is annealed at about 20 ° C for about 2 hours to reduce the potential difference caused by the oxide of the transparent electrode and prevent the reflective layer from being peeled off. Specific Embodiment 2 FIG. 11 is a cross-sectional view showing a first layer according to the present invention. 20 reflection-transmission type liquid crystal display device of the second embodiment. Referring to FIG. 11, the reflection-transmission type liquid crystal display device according to the second embodiment is the same as the liquid crystal display device of the first embodiment, except for one item. The difference between the second embodiment and the first embodiment is that the transparent electrode 124 is formed on the passive layer 120 (except for the first contact hole 122), ν, ύ 24 200402586 发明, description of the barrier metal layer pattern 128 and the reflective electrode 130 are formed on the first contact hole 122 and the transparent electrode 124, so the drain 114 of the thin film transistor 150 is directly contacted through the first contact hole 122. When the data wiring including the drain 114 is made of chromium ( When Cr) is made of a metal thin film, a thin chromium oxide film grows on the surface of the metal film. The chromium oxide film can be easily removed with ITO # etchant. Thus, when the transparent electrode 124 on the first contact hole 122 is its wet name When the method is removed, the chromium oxide film formed on the surface of the electrode 114 is removed at the same time. In this case, the blocking metal layer pattern 128 and the reflective layer 130 directly contact the drain electrode 114, thereby enhancing the space between the thin film transistor and the pixel electrode 10. At this time, since the transparent electrode 124 is directly connected to the reflective electrode 13 through the barrier metal layer pattern 128, the signal is usually transmitted from the thin film transistor to the pixel electrode. Specific Example 3 15 The 12th figure is a cross-sectional view A reflection-transmission type liquid crystal display device according to a third embodiment of the present invention. Referring to FIG. 12, the reflection-transmission type liquid crystal display device of the third embodiment is the same as the first embodiment, except for one item. The difference between the third embodiment and the first embodiment is that the barrier metal layer patterns 128 and 20 and the reflective electrode 130 are formed only on the transparent electrode 124, except for the first contact hole 122. At this time, since the reflective electrode 13 is directly connected to the transparent electrode 124 through the barrier metal layer pattern 128, the signal is usually transmitted from the thin film transistor to the pixel electrode. 200402586 (ii) Description of the invention Embodiment 4 Fig. 13 is a sectional view showing a reflection-transmission type liquid crystal display device according to a fourth embodiment of the present invention. The liquid crystal display device of FIG. 13 includes an amorphous silicon thin film transistor having a top-gate structure. FIG. 13 shows a pixel region in which an N-type thin film transistor (TFT) is formed in the pixel region; and a driver region in which an N-type TFT and a P-type TFT are formed. Referring to FIG. 13, a blocking layer 202 made of an oxide such as silicon oxide is formed on an insulating substrate 202 of glass, quartz, or sapphire. An active pattern 204 composed of amorphous silicon is formed on the blocking layer 202. A gate insulating layer 206 made of silicon oxide is formed on the active pattern 204 and the blocking layer 202. The N-type TFT gate 208 is formed on the pixel region of the gate insulating layer 206. The intersection of the active pattern 204 overlapping the gate 208 becomes the channel region 212C of the N-type TFT. The active pattern 204 is divided into two parts by the channel region 212C. One part of the active pattern 204 becomes the source region 212S, and the other part becomes 212D. In other respects, one part of the active pattern 204 is a drain electrode 212D, and another part of the active pattern 204 is a source region 212S. In addition, the capacitor lower electrode 209 is made of the same layer of the gate electrode 208 on the pixel region of the gate insulating layer 206. 20 On the gate insulating layer 206 in the driver region, a gate 212 is formed, which defines a source region 213S, a drain 213D, and a channel region 213C of the N-type TFT, and a gate 211, which defines the P-type TFT, is formed. The source region 214S, the drain electrode 214D, and the channel region 214C. In this case, the source / drain of the N-type TFT can be made of a slightly doped drain (LDD) structure to improve the reliability of the transistor. Reference numbers 212L and 213L indicate the LDD area. The first interlayer dielectric layer 216 and the second interlayer dielectric layer 218 are sequentially formed on 26 X J1 200402586 (2), the description of the invention, the gate electrodes 208, 210, and 211, the capacitor lower electrode 209, and the gate insulation layer 206. The first interlayer dielectric layer 216 is made of silicon oxide 'and the second interlayer dielectric layer 218 is made of nitride such as silicon nitride. Above the capacitor lower electrode 209, the opening 220 exposing the first interlayer dielectric layer 216 5 is formed through the second interlayer dielectric layer 218. In addition, the contact hole 222 passes through the first interlayer dielectric layer 216, the second interlayer dielectric layer 218, and the source region / > of the pixel region and the gate insulating layer 206 above the regions 212S and 212D, and the source of the driver region. The gate / layer regions 213S, 213D, 214S, and 214D are formed with a gate insulating layer 206. The source electrode 224 and the drain electrode 225 are formed on the second interlayer dielectric layer 218, and thus are connected to the source region and the non-region 212S and 212D of the pixel region through the contact hole 222, respectively. In addition, the source electrode 226 and the drain electrode 227 are formed on the second interlayer dielectric layer 218 ', and thus are connected to the source region and the non-region 213S and 213D of the N-type TFT driving region through the contact hole 222, respectively. In addition, the source electrode 228 and the drain electrode 229 are formed on the second interlayer dielectric layer 218, and thus are connected to the source region and the drain regions 214S and 214D of the P-type TFT in the driver region through the contact hole 222, respectively. The drain electrode 225 of the pixel region is also formed in the opening 220, and the lower electrode 209 of the capacitor is stacked, so that the stacked portion is provided as the upper electrode of the capacitor. Thus, the first interlayer dielectric layer 2 and 6 located above the capacitor lower electrode 209 is used as the dielectric layer of the capacitor. In the conventional liquid crystal display device, a buffer layer made of n + doped silicon is extra shape, and the gate insulating layer is made of the same layer as the dielectric layer of the capacitor. However, in the present invention, it is caused under the active pattern, and then the buffer layer serves as the lower electrode of the capacitor. Therefore, the upper electrode of the capacitor is made of the lower electrode 209 and the gate Λ 4/27 200402586 玖, the same layer as the invention description 208, and the drain electrode 225 is used as the upper electrode of the capacitor, so no additional deposition and etching methods are needed to make Become the electrode below the capacitor. Therefore, the manufacturing method is simplified. A passive layer 2 30 made of a photosensitive organic material is formed on the source and drain electrodes 2 2 4 5, 225, 226, 227, 228, and 229 and the second interlayer dielectric layer 218. The pixel electrode is formed on the passive layer 230 and is connected to the drain electrode 225 through a through hole 232 formed on the passive layer 230 above the pixel region drain electrode 225.

The pixel electrode includes a transparent electrode 234 and a reflective electrode 238. The transparent electrode 234 contains a conductive oxide such as ITO, and the reflective electrode 238 is made of a metal such as aluminum (Al-Nd). The barrier metal layer pattern 236 is formed between the transparent electrode 234 and the reflective electrode 238, and prevents electric corrosion between the transparent electrode 234 and the reflective electrode 238. The barrier metal layer pattern 236 includes a metal having an etching rate equal to the etching rate of the reflective electrode 238 for a predetermined etchant used to etch the reflective electrode 238. Preferably, the barrier metal layer pattern 236 includes 15 molybdenum-tungsten (Mo-W), and is patterned to have a shape similar to that of the reflective electrode 238.

As described above, since the barrier metal layer pattern 236 is formed between the transparent electrode 234 and the reflective electrode 238, the transparent electrode 234 is electrically connected to the reflective electrode 238, and the etching for forming a contact hole connecting the reflective electrode 238 to the drain electrode 225 can be eliminated. Method steps. This simplifies the manufacturing process. 20 Figures 14A to 14G are sectional views illustrating a method of manufacturing a reflection-transmission type liquid crystal display device according to a fourth embodiment of the present invention. Referring to FIG. 14A, silicon oxide is deposited on a substrate 200 made of glass, quartz, or sapphire by a PECVD method to a thickness of about 2000 angstroms, thereby forming a blocking layer. The blocking layer 202 can be skipped, but it is preferable to form the blocking layer 202. 28 200402586 发明, description of the invention to prevent the impurities of the substrate 200 from penetrating into the amorphous silicon layer through the blocking layer 202 during the subsequent amorphous silicon crystallization process. . After the low-pressure chemical vapor deposition (LPCVD) method or the PECVD method, an amorphous silicon layer (not shown) having a thickness of about 500 angstroms is deposited on the blocking layer 202, and then the amorphous silicon layer is subjected to laser annealing or an oven. Annealed and crystallized into a polycrystalline silicon layer. Then, the polycrystalline silicon layer is patterned into an active pattern 204 by a lithography method using a first photomask.

Referring to FIG. 14B, silicon oxide is deposited on the active pattern 204 and the blocking layer 202 by a PECVD method to a thickness of about 1000 angstroms, thereby forming a gate insulating layer 10 206.

After the gate of Al-Nd is deposited on the gate insulating layer 206 to a thickness of about 2500 angstroms, the P-type TFT is partially turned on in the driver region, and then the exposed gate is lithographically processed by a second photomask. It is etched by the method, and thus a P-type TFT gate 211 is formed in the driver region. Subsequently, the P + impurity is implanted 15 by ion implantation, thereby forming a source region 214S and a drain region 214D of the P-type TFT in the driver region. During the ion implantation process, the P + impurity is not implanted into the gate electrode 211, thereby defining a channel region 214C of the active pattern 204.

After the third photomask is used to turn on the N-type TFTs in the pixel area and the driver area by the lithography method, the exposed gate layer is etched to form the under-capacitance 209 and N-type TFTs gates 208 and 210 . Then, N + impurities are implanted by ion implantation, thereby forming a source region 2128 and a drain 212D of the N-type TFT in the pixel region, and a source region 2138 and the drain 213D of the N-type TFT in the driver region. During the ion implantation, N + impurities are not implanted in the gates 208 and 210, and thus the channel regions 212C and 213C are defined in the active pattern 204. In this case, LDD 29 Λύ Μ 200402586 (invention description) is formed by N-type TFTs, and regions 212L and 213L are formed by ion implantation of N-heterofluoride to complete the transistor with LDD structure.

Referring to FIG. 14C, laser annealing or oven annealing is performed to excite dopant ions in the source region and the no-zone region, and harden the damaged stone layer. A first-interlayer dielectric layer 216 containing oxidized stone 5 is then formed on the entire surface of the resulting structure to a thickness of about 1000 angstroms. After the second interlayer dielectric layer 218 including nitride is formed on the first interlayer dielectric layer to a thickness of about 4000 Angstroms, the second interlayer dielectric layer 218 is etched by a lithography method using a fourth photomask, thereby forming The opening 22o exposes the first interlayer dielectric layer 216 above the capacitor lower electrode 209. 0 Referring to FIG. 14D, the second interlayer dielectric layer 218, the first interlayer dielectric layer 216, and the gate insulating layer 206 are sequentially carved using a fifth photolithography method by lithography, thereby forming exposed pixel areas and drivers. The source of the region and the contact hole 222 of the drain region. After the data layer containing molybdenum-tungsten (Mo-W) is formed on the opening 220, the contact hole 15 222, and the second interlayer dielectric layer 218 to a thickness of about 3000 Angstroms, the data layer

The sixth photomask is used to form the source region 224 and the drain region 225 of the pixel region, the source region 226 and the drain region 227 of the N-type TFT in the driver region, and the source region 228 and the channel region of the P-type TFT by lithography. The pole 229 is in the driver area. The source and drain electrodes 224, 225, 226, 227, 228, and 229 are connected to the source and drain regions through the contact holes 222 and 20, respectively. At this time, the drain electrode 225 of the pixel region is also formed in the opening 220 俾, and the capacitor lower electrode 209 is stacked, so that the stacked portion is set as the capacitor upper electrode. Referring to FIG. 14E, a photosensitive organic thin film is coated on the source and drain electrodes 224, 225, 226, 227, 228, and 229 and the second interlayer dielectric layer 218 up to about 30 .: 200402586 发明, description of the invention 3 microns Thickness, thereby forming the passive layer 230. In order to form a through hole 232 penetrating the passive layer 230, after a seventh photomask (not shown) corresponding to the through hole 232 is disposed on the passive layer 230, the passive layer 230 uses the seventh light above the drain region 225 of the pixel region. The hood was initially exposed by 5 methods of full exposure. Subsequently, after the eighth mask (not shown in the figure) forming the microlens is placed on the passive layer 230, part of the passive layer 230 (except for the through-hole area) is exposed twice by the lens exposure method using the eighth mask. Then, a TMAH-containing solution is used for development processing, thereby forming a through hole 232 and a plurality of slits 233. The drain electrode 225 of the pixel region is exposed through the through hole 232. It is then hardened at a temperature of about 130 ° C to about 230 ° C for about 100 minutes, and then flows and hardens the passive layer 230. Referring to FIG. 14F, an argon plasma treatment is performed on the passive layer 230 to improve the adhesion between the organic passive layer 230 and the transparent conductive layer to be formed thereon. A transparent conductive layer made of a conductive material (such as ITO) is formed on the through hole 232 and the passive layer 230 to a thickness of about 450 angstroms at a temperature of less than 200 ° C and preferably about 20 to about 150 ° C. Subsequently, the transparent conductive layer is annealed at a temperature higher than 100 ° C for more than 30 minutes, and preferably annealed at 200 ° C for about 1 to about 2 hours, so as to improve the uniformity of the pattern of the transparent conductive layer. Then, the transparent conductive layer is subjected to hard baking and drying treatment at a temperature higher than 120 ° C for more than about 30 minutes, and the adhesion between the transparent conductive layer and the photosensitive layer pattern (which will be formed on the subsequent lithography method) will be improved. The transparent conductive layer is formed by using a ninth photomask by lithography and wet etching to form a transparent electrode 234. The transparent electrode 234 is connected to the drain electrode 225 of the pixel region through the through hole 232. Referring to FIG. 14G, a barrier metal layer is formed on the entire surface of the structure including the transparent electrode 234. The barrier metal layer is made of a metal such as platinum-crane (Mo-W), which has an etching rate similar to that of a reflective electrode, in terms of a predetermined etchant for etching a later-formed reflective layer. The barrier metal layer having a thickness of about 500 angstroms is formed at a temperature of about 20 to about 150 ° C and preferably about 50 ° C. A reflective layer comprising aluminum- (Al-Nd) is then formed on the barrier metal layer to a thickness of about 2000 angstroms at a temperature of about 20 to about 150 ° C and preferably about 50 ° C. The reflective layer is then above 100. (: The temperature annealing is greater than about 30 minutes, and preferably about 200 ° C for 1 hour, to prevent the reflective layer from peeling in the subsequent development process. Subsequently, the tenth photomask is used for photographic and wet etching methods for the reflective layer and the organic barrier layer. The patterning method is used to form a pattern, thereby forming a reflective electrode 238 and a metal barrier layer pattern 236. The reflective electrode 238 directly contacts the transparent electrode 234. Embodiment 5 FIG. 15 is a cross-sectional view showing the reflection-transmission according to the fifth embodiment 15 liquid crystal display device. Referring to FIG. 15, the reflection-transmission liquid crystal display device according to the fifth embodiment is the same as the fourth embodiment, except for only one item. The fifth embodiment and the fourth embodiment The difference is that the transparent electrode 234 is formed on the passive layer 230 (except for the through hole 232), and the blocking metal layer pattern 236 and the reflective electrode 238 are formed on the through hole 232 and the transparent electrode 234. The drain electrode 225 of the thin film transistor is contacted. Specific Embodiment 6 FIG. 16 is a sectional view showing a reflection-transmission type liquid crystal display device according to a sixth specific embodiment of the present invention. According to FIG. 16, the reflection-transmission type liquid 32 according to the sixth embodiment 32 200402586 The crystal display device is the same as the fourth embodiment, except for only one item. The sixth embodiment and the fourth embodiment are implemented. The difference between the examples is that the barrier metal layer pattern 236 and the reflective electrode 238 are formed only on the transparent electrode 234, except for the through hole 232. 5 In the foregoing specific embodiment, the transparent electrode and the reflective electrode are patterned using two photomasks. Transparent electrode and reflective electrode According to the seventh specific embodiment of the present invention, a single photomask is used for patterning. For example, after performing argon plasma treatment to improve the adhesion between the organic passive layer and the transparent conductive layer, the transparent conductive layer and the barrier metal The layer and the reflective layer are sequentially formed on the resulting structure at a temperature of less than about 200 ° C. In this case, the transparent conductive layer is made of ITO, and the metal barrier layer and the reflective layer are made of Mo_W and Al_Nd, respectively. After that, an annealing treatment is performed for about 1 hour at a temperature higher than about 1 °. After the reflective layer is prevented from being peeled off in the subsequent development process, the photosensitive layer is coated on the reflective layer. Secondly, the photosensitive layer Exposure and development are performed using a half-tone mask or slit mask 15. Therefore, the photosensitive layer patterns with different thicknesses are formed in the transmission window and the reflective window. The photosensitive layer pattern is used as the etching mask on the reflective layer and the barrier metal layer. The layer pattern is partially removed by ashing or dry etching to have a predetermined thickness. The transmission window and reflection window are formed at the same time as the transparent conductive layer is etched, preferably by using the remaining part of the photosensitive layer pattern as an etching mask. The position of the transparent electrode substantially coincides with the transmission window, and the reflection electrode is exposed through the reflection window. Therefore, the transparent electrode, the pad electrode, the barrier metal layer pattern, and the reflection electrode use a photomask according to the seventh embodiment of the present invention. It was made to take advantage of 200,402,586, invention description to reduce the number of photomasks. According to the present invention, in a multilayer pixel electrode with a transparent electrode as a lower layer, the 'transparent electrode' directly contacts the reflective electrode. Preferably, in order to prevent electric corrosion between the transparent electrode and the reflective electrode, the blocking metal layer pattern is interposed between the transparent 5 electrode and the reflective electrode. Therefore, since the transparent electrode is directly connected to the reflective electrode, the process of forming a contact hole connecting the reflective electrode to the thin-film transistor is eliminated, so the fabrication process is simplified. Especially since the multilayer pixel electrode can be made of a single photomask and, fortunately, a half photomask or a slit photomask is used, the manufacturing process can be further simplified. 10 In addition, the reflective layer is annealed at a temperature of about 200 ° C for about i to about 2 hours, thereby preventing peeling of the reflective electrode of the multilayer pixel electrode (with a transparent electrode as the lower layer). In addition, since the pad electrode is made of the same layer of the transparent electrode, when the pad electrode of the liquid crystal display panel is connected to the external integrated circuit 15 by the COG method, metal corrosion does not occur, so the reliability of the pad is increased. Although the preferred embodiments of the present invention have been described, it should be understood that the present invention is by no means limited to these preferred embodiments. Instead, a person skilled in the art can make a variety of the essence and scope of the present invention within the scope of the patent application. Changes and modifications. 20 [Schema 4 Jian Jun ^ Ming] Figures 1A to 1C are sectional views showing a conventional reflection-transmissive liquid crystal display device; Figures 2A to 2C are sectional views showing another conventional reflection-transmissive liquid crystal display device; 200402586 发明 Description of the invention Figures 3A to 3C are sectional views showing a reflection-transmission type liquid crystal display device according to the first embodiment of the present invention; Figures 4A to 1GC are sectional views illustrating the first-specific embodiment according to the present invention A method for manufacturing a reflection-transmission type liquid crystal display device. · 5 帛 11 is a sectional view showing a reflection-transmission type liquid crystal display device according to a second specific embodiment of the present invention;

Figure 12 is a sectional view showing a reflection-transmission type liquid crystal display device according to a third embodiment of the present invention; Figure U is a sectional view showing a reflection-transmission type liquid crystal display device 10 according to a fourth embodiment of the present invention 14A to 14G are cross-sectional views illustrating a method of manufacturing a reflective and transmissive liquid crystal display device according to a fourth specific embodiment of the present invention; and FIG. 15 is a cross-sectional view illustrating a fifth specific embodiment according to the present invention. A reflection-transmission type liquid crystal display device; and FIG. 15 is a cross-sectional view showing a sixth embodiment of the present invention.

Reflection-emissive liquid crystal display device. [Representative Symbols of the Main Elements of the Armed Forces] 22 ··· Drain 25 ··· Inorganic Passive Layer 26 ·· Organic Passive Layer 28 '34 ·· Contact Hole 30 ·· Transparent Electrode 32 ·· Buffer Layers 33, 35 ·························································· Thin Qi transistor 16 ... Active pattern 18 ... Electron and contact pattern 19 ... Data source pad 20 ... Source; (¾ 200402586), Invention description 40 ... Data pad electrode 50 ... Substrate 51 ... Gate pad 52 ... Gate 54 ... Gate insulation 55 .. Thin film transistor 56 ... Active pattern 5 8 ... Resistive contact pattern 59 ... Data pad 60. " Source 62 ... Drain electrode 65 .. Inorganic passive layer 66 .. Organic passive layer 68 .. Contact hole 69, 71 ... Pad contact hole 70 .. Reflective electrode 74 .. Gate pad electrode 76 .. Data pad electrode 100 .. Insulating substrate 102 ... Gate 104 .. Gate pad 106 ... Gate insulation layer 108 ... Active pattern 110. Resistive contact pattern 112, 114 ... Electrode 115 ... Data pad 116 .. .. inorganic passive layer 117, 118, 119, 12 2… contact hole 120... Organic passive layer 124... Transparent electrode 125... Gate pad electrode 126... Information pad electrode 128... Barrier metal layer 13 0 ... reflective electrode 150 ... film Transistor 200 ... Insulating substrate 202 ... Blocking layer 204 ... Active pattern 206 ... Gate insulating layer 208, 210, 211 ... Gate 209 ... Lower electrodes 212C, 213C, 214C ... Channel regions 212D, 213D, 214D ... > and regions 212L, 213L ... LDD regions 212S, 213S, 214S ... source 216, 218 ... interlayer dielectric layer 220 ... opening 222 ... contact hole 224 226, 228 ... Source 225, 227, 229 ... Drain 230 ... Passive layer 232 ... L 234 ... Transparent electrode 236 ... Blocking metal layer pattern 238 ... Reflective electrode

36

Claims (1)

Patent application scope L A liquid crystal display device includes: a liquid crystal display device including a substrate, the substrate has a ", a pixel region is formed thereon, and a pad region is located in the display region On the periphery, the display area has a transparent electrode, and the pad area has a pad electrode. The transparent electrode and the pad electrode are made of the same layer; and a reflective electrode is formed on the transparent electrode, and there is an exposed transparent electrode. A part of the transmission window... As the liquid crystal display device of the first patent application scope, further comprising a barrier metal layer pattern interposed between the transparent electrode and the reflective electrode, the barrier metal layer has substantially the same shape as the reflective electrode. '· If the liquid crystal display device of the second patent application scope, wherein the barrier metal layer contains a material', the material has a repetition rate substantially equal to the last engraving rate of the reflective electrode. K As for the liquid crystal display of the first patent application scope Device, wherein the transparent electrode includes indium tin oxide (ITO), the reflective electrode includes 铭 _ 铉 (A1_ Nd) 'and the The pattern of the barrier metal layer includes molybdenum-tungsten (Mo-w). F. The liquid crystal display device according to item 1 of the patent application range, wherein the pixel includes an amorphous silicon type thin film transistor. &Gt; In the liquid crystal display device of the item, the pixel includes a polycrystalline silicon type thin film transistor. A liquid crystal display device includes: a substrate 'the substrate has a display area and a pad area located around the display area; a thin film transistor is formed on the substrate不 上 上 'Thin-film transistor 200402586, patent application scope 15 20 Including-gate, first and second electrodes and an active pattern; a passive layer is formed on the thin-film transistor and the substrate' the passive layer has a hole exposed A second electrode; a transparent electrode formed on the display region of the pure moving layer; a pad electrode formed on the pad region of the passive layer, the pad electrode made of the same layer of the transparent electrode; a reflective electrode formed on A transparent window is exposed on the transparent electrode, and a part of the transparent electrode is exposed; and a barrier metal layer pattern is formed between the transparent electrode and the reflective electrode Its shape is the same as the shape of the reflective electrode. 8. For a liquid crystal display device according to item 7 of the patent application scope, wherein the transparent electrode is formed on the hole and the passive layer, it is connected to the second electrode through the hole. The liquid crystal display device of the seventh aspect of the patent, wherein the transparent electrode is formed only on the passive layer, except for the position of the hole; and the barrier metal layer pattern and the reflective electrode are formed on the hole and the transparent electrode, and thus are connected to the second via the hole. 10. The liquid crystal display device according to item 7 of the scope of patent application, wherein the barrier metal layer pattern and the reflective electrode are formed only on the transparent electrode, except for the position of the hole. 11. For the liquid crystal display of item 7 of the scope of patent application The device, wherein the passive layer comprises an inorganic passive layer and an organic passive layer stacked on the inorganic passive layer. 12. If the liquid crystal display device of item u of the patent application scope, wherein the organic r * 38 200402586, patent application scope The passive layer is formed only on the display area, except for the pad area. 13. · A method for manufacturing a liquid crystal display device, the method includes the following steps: 10 forming a transparent conductive layer on a substrate, the substrate having a display area and a pad area around the display area; forming a reflective layer having transparency On the substrate of the conductive layer; the reflective layer is annealed to prevent the reflective layer from peeling off; and the reflective layer is patterned to form a reflective electrode. 14. The method of manufacturing a liquid crystal display device according to item 13 of the patent application scope, wherein the annealing step of the reflective layer is higher than about 100. (: The temperature is performed for more than about 30 minutes. 15. The method for manufacturing a liquid crystal display device according to item 13 of the patent application range, wherein the argon (Ar) plasma method is performed to improve the adhesion between the transparent conductive layer and the lower layer. Θ 15 16. The method for manufacturing a liquid crystal display device according to item 13 of the scope of patent application, further comprising the following steps: before the step of forming a reflective layer, patterning a transparent conductive layer and forming a bright electrode on the display area and the outline Step of dysprosium electrode on lining area. The 20-step further includes the following steps: before patterning the transparent conductive layer, annealing the transparent conductive layer to obtain a pattern of the transparent conductive layer, and hard baking the transparent conductive layer to improve the transparent conductive adhesiveness. 18 · If the method of manufacturing a liquid crystal display device according to item 13 of the patent application, 39 200402586, the patent application scope further includes the step of forming a transparent conductive layer after the step of forming a reflective electrode, and simultaneously forming a transparent electrode on the display area and the substrate. Step of pad electrode on the general area. 19. The method for manufacturing a liquid crystal display device according to item 18 of the scope of patent application, wherein the reflective electrode, the transparent electrode, and the lining electrode are made of a single photomask. 20. The method for manufacturing a liquid crystal display device according to item 19 of the scope of patent application, wherein the photomask is a half dimming mask or a slit photomask. 21. The method for manufacturing a liquid crystal display device according to item 13 of the patent application scope, further comprising the step of depositing a barrier metal layer before the step of depositing the reflective layer. 22. The method for manufacturing a liquid crystal display device as claimed in claim 21, wherein when the reflective layer is patterned to form a reflective electrode, the barrier metal layer is simultaneously patterned to form a barrier metal layer pattern. 15 23. The method for manufacturing a liquid crystal display device according to item 21 of the application, wherein the transparent conductive layer, the barrier metal layer, and the reflective layer are formed at a temperature of about 20 to about 150 ° C. 24. The method for manufacturing a liquid crystal display device as claimed in claim 21, wherein the barrier metal layer is made of a material having an etching rate similar to that of a reflective layer with a 2n etch rate. 25. The method for manufacturing a liquid crystal display device according to item 21 of the application, wherein the transparent conductive layer includes indium tin oxide (ITO), the barrier metal layer includes molybdenum-tungsten (Mo-W), and the reflective layer includes aluminum- “(Al-Nd). 26. A method for manufacturing a liquid crystal display device, the method includes the following steps: 40. Pick up and apply for a patent to form a polar region on the substrate's display area; and a gate liner on the substrate on the pad area around the display area. Forming a gate insulating layer so that the gate insulating layer covers the gate electrode and the gate pad; forming an active pattern and a resistive contact pattern on the gate insulating layer; forming a first electrode and a second electrode in the resistive contact pattern And simultaneously form a data pad on the gate insulation layer in the pad area; form a passive layer on the first and second electrodes, the data pad and the gate insulation layer; The second and third contact holes are respectively used to expose the second electrode gate pad and the data pad; a transparent electrode is formed in the display area; and a gate lining electrode and a data pad electrode are formed respectively, The second and third contact holes contact the gate pad and the data pad; sequentially form a blocking metal layer and a reflective layer on the transparent electrode and the pad electrode; and annealed the reflective layer to prevent the reflective layer Peeling; and patterning the reflective layer and the barrier metal layer to form a barrier metal layer pattern and a reflective electrode. 27. The method for manufacturing a liquid crystal display device according to item 26 of the application, wherein the active pattern comprises amorphous silicon. 28. The method for manufacturing a liquid crystal display device according to item 26 of the application for a patent, wherein the active pattern, the resistive contact pattern, the first electrode, the second electric 200402586, the patent application range electrode and the data pad are made of a single photomask. to make. 29. The method for manufacturing a liquid crystal display device according to item 26 of the application, wherein the passive layer comprises an inorganic passive layer and an organic passive layer stacked on the inorganic passive layer. 5 30. The method for manufacturing a liquid crystal display device according to item 29 of the scope of patent application, wherein the organic passive layer in the pad region is removed in the passive layer etching step to form first, second and third contact holes. 31. The method for manufacturing a liquid crystal display device according to item 26 of the scope of patent application, wherein the transparent electrode is formed on the first contact hole and the passive layer, and the transparent electrode system is connected to the second electrode through the first contact hole due to 10. . 32. The method for manufacturing a liquid crystal display device according to item 26 of the application for a patent, wherein the transparent electrode is formed only on the passive layer, except for the first contact hole, and the metal layer pattern and the reflective electrode system are formed on the first contact. Hole and the transparent electrode, and thus connected to the second 15 electrode through the first contact hole. 33. The method for manufacturing a liquid crystal display device according to item 26 of the application, wherein the barrier metal layer pattern and the reflective electrode are formed only on the transparent electrode, except for the first contact hole. 34. The method for manufacturing a liquid crystal display device according to item 26 of the scope of patent application, wherein the step of forming a transparent electrode, a gate pad electrode and a data pad electrode further includes the following steps: performing an argon plasma treatment to improve passive Adhesion between the layer and the transparent electrode; forming a transparent conductive layer on the first, second, and third contact holes and the passive layer in the scope of patent application; annealing the transparent conductive layer to obtain a uniform pattern of the transparent conductive layer Hard-bake the transparent conductive layer to improve the adhesion of the transparent conductive layer; and pattern the transparent conductive layer. 35. The method for manufacturing a liquid crystal display device as claimed in item 26 of the scope of patent application, wherein the step of annealing the reflective layer is performed at a temperature higher than about 10 (rc temperature for more than about 30 minutes. 36. If the scope of patent application is 26th The method for manufacturing a liquid crystal display device, wherein the transparent electrode, the pad electrode, the barrier metal layer pattern, and the reflective electrode are made using a single photomask. 37. A method for manufacturing a liquid crystal display device, the method including the following steps to form a Active pattern on a substrate; 幵 &gt; forming a gate insulating layer on a substrate with an active pattern; forming a gate electrode on the gate insulating layer to form an active pattern position; #sequence forming first and second interlayer dielectric layers on On the gate electrode and the gate insulation layer; at the first time, the first and second interlayer dielectric layers and the gate insulation layer are formed, and a contact hole is formed to expose the first and second regions of the active pattern respectively; and the first and second electrodes are formed, It is connected to the first and second regions respectively through contact holes; forming a passive layer on the first and second electrodes and having the 200402586 patent application, the first and the second electrical range On the second interlayer dielectric layer; forming a through-hole for exposing the second electrode in the passive layer; forming a transparent electrode on the passive layer; sequentially forming a barrier metal layer and a reflective layer on the transparent electrode 5: annealing the A reflective layer to prevent peeling of the reflective layer; and The reflective layer and the barrier metal layer are patterned to form a barrier metal layer and a reflective electrode on the transparent electrode. 38. The method for manufacturing a liquid crystal display display device according to item 37 of the scope of patent application, wherein the 5H active pattern is made of polycrystalline stone. 39. The method for manufacturing a liquid crystal display device according to item 37 of the scope of patent application, wherein in the step of forming the gate, in addition to the active pattern, the lower electrode of the capacitor is simultaneously formed on the gate insulating layer. 40. The method for manufacturing a liquid crystal display device according to item 37 of the patent application scope, further comprising etching the second interlayer dielectric layer before the step of forming the contact hole, and exposing the first interlayer dielectric layer above the lower electrode of the capacitor + step . θ 乂 I is a method for manufacturing a liquid crystal display device as claimed in item 37 of the patent scope, and further includes, after the step of forming a contact hole, etching Pro &amp; W is not "the day 1 dielectric gastrointestinal rupture above the capacitor lower electrode The first interlayer interstitial step. Stomach <change 42. If the method of manufacturing a liquid crystal display device according to item 37 of the patent application is applied, the first electrode of Xuan Xuan is shaped as an electrode stacked on the lower part of the tritium container. 43. If applied A method for manufacturing a liquid crystal display device according to item 37 of the patent, 44 200402586. The scope of the patent application, wherein the first interlayer dielectric layer system includes an oxide, and the second interlayer dielectric layer system includes a nitride. 44. If applied The method of manufacturing a liquid crystal display device according to item 37 of the patent, wherein the transparent electrode is formed on the hole and the passive layer, and thus is connected to the second electrode through a through 5 hole. 45. The method for manufacturing a liquid crystal display device according to item 37 of the application, wherein the transparent electrode system is formed only on the passive layer, except for the through hole, and the barrier metal layer pattern and the reflective electrode system are formed on the through hole and the transparent electrode. , And thus connected to the second electrode via the through hole. 10 46. The method of manufacturing a liquid crystal display device according to item 37 of the scope of patent application, wherein the barrier metal layer pattern and the reflective electrode are formed only on the transparent electrode, except for the through hole. 47. The method for manufacturing a liquid crystal display device according to item 37 of the scope of patent application, wherein the 15 steps of forming a transparent electrode, a gate pad electrode and a data pad electrode further include the following steps: Perform argon-electric water treatment to improve the adhesion between the passive layer and the transparent electrode; form-a transparent conductive layer on the through hole and the passive layer; ii fire through the moon conductive layer 'to obtain a transparent conductive layer with a uniform pattern of 20 Hard-bake the transparent conductive layer to improve the adhesion of the transparent conductive layer; and pattern the transparent conductive layer. 48. For example, the 37th patent for the scope of patent application for the manufacture of liquid crystal display devices 45 200402586, the scope of the patent application, where the step of annealing the reflective layer is performed at a temperature higher than about 100 ° C for more than about 30 minutes . 49. The method for manufacturing a liquid crystal display device according to item 37 of the scope of patent application, wherein the transparent electrode, the pad electrode, the barrier metal layer pattern, and the reflective electrode are made of a single photomask. 46