玖、發明說明： 【發明所屬之技術領域3 技術領域 本發明係有關於液處理裝置。 發明背景 譬如，在半導體裝置之製造過程之微影成像法步驟 中，係在半導體晶片（以下稱為「晶片」）上塗布抗蝕液，實 行形成抗#膜的抗蚀塗布處理，在晶片上曝光電路圖案之 曝光處理，在曝光後之晶片上供給顯像液，晶片靜止顯像 之顯像處理#，最後在晶片上可形成一定的電路圖案。 在上述顯像處理中，係進行，譬如，供給顯像液至曰曰 片，在晶片上形成顯像液之盛液之盛液步驟；在晶片上形 成顯像液之盛液狀態下，將晶片作一定時間靜止顯像之靜 止顯像步驟；及轉動靜止顯像終了之晶片，並供給洗淨液 至該轉動之晶片以洗淨晶片之洗淨步驟。 直到現在，上述顯像液之盛液步驟，係藉在旋轉卡盤 上以面接觸韻保持晶4，轉動職轉卡盤，—邊轉動晶 片，-邊供給顯像液至晶片來進行。上述靜止顯像步驟B，a 則是在繼續將⑸保持於轉卡盤上㈣下實行。 然而’在晶片面内旋轉卡盤接觸之部份與未接觸之部 份因來自轉卡盤料之熱量不同而使晶片溫度也會不同。 因此’在晶片面时些部份與其他部份在晶片上之顯像液 溫度也不同，在晶片面内顯像速度就不同。結果，在晶片 200409182 面々、象狀ϋ生不均—之情形，且最後形成之電路圖案 線寬度也會不一致。 為解決這個問題，已有在顯像液之步驟時，在靜止顯 像t驟時，將各個晶片切於與旋轉卡盤不_保持銷， 在旋轉卡盤與晶片分離狀態下實行顯像處理_顯像處理 方*、’頁像處理1置（4如，日本國公開公報2001-102298 號公報）。 10 15 …、而右使用上述公報所揭示之顯像處理方法，則在 顯像液之麵步_，在靜止顯像時由於晶片僅以先頭 細的突部狀保持銷支撲，容易發生晶片之偏離。特別是， 於顯像液之盛液步驟時，若以保持銷支撐晶片則由於不 能如上述之_卡盤般轉動晶“，必須—邊移動顯像 液供給噴嘴側，—邊供給顯像液。所以，滴下至晶片之顯 像液在顯⑽供时仙之軸方向具有速度分量且晶 片也受到該速度分量之影響而容易偏離。此外，若發生晶 片偏離，則顯像液不能適當地供給至晶片i，且不能適當 地進行晶片之搬送。又，如a M白位4士 ai 如日日片自保持銷落下，則會導致 晶片破損，發生裝置故障。 L ^^明内容;j 20 發明概述 本發明係鑑於如此的情形而作成者，其目的在於提供 -種以晶片為首之基板上，當供給顯像液等處理液對基板 進行液處理之際，可均-保持基板面内之處理液溫度，同 時也能抑制基板偏離之液處理裝置。 6 本發明係在基板上供給處理液以對基板進行液處理之 液處理裝4，X，該液纽裝置具有赠接财式支撐處 理液所供給之基板的支撐構件。 根據本發明，在基板供給處理液時，或在其後，藉支 撐構件可赠接觸方式切基板。因此，供給基板上的處 理液之面内溫度，0影響如上職轉卡盤的基板保持構 件，可均一地實行對基板面内進行處理液之液處理。而且， 由於可以線接觸支撐基才反，相肢使用冑述銷的情形，基 板較不易發生偏離。 於本發明中，亦可更包含有：保持與前述基板由前述 支撐構件支撐之部份不同的部份，並使基板旋轉之基板保 持構件；及用以前述支撐構件與基板保持構件於上下方向 相對地移動之驅動部。如此，譬如在對基板進行液處理之 洗淨步驟時或乾燥步驟時，將基板自支撐構件傳遞至基板 保持構件，在確實保持基板狀態下，可轉動基板。又，譬 如，即使基板在受支撐構件支撐狀態下移動，由於是以線 接觸方式支揮基板，與習知保持銷相較也可抑制基板之偏 離。 再者，於本發明中，具有複數個前述支撐構件，且在 前述基板下方，從平面看，前述支撐構件係等間隔地配置 於以基板中心為圓心之同一圓周上，故可適當地抑制朝水 平方向之所有方向之基板偏離。 圖式簡單說明 第1圖顯示搭載本實施形態這樣的顯像處理裝置之塗 200409182 布顯像處理系統之構成之概略平面圖。 第2圖係第1圖之塗布顯像處理系統之正面圖。 第3圖係第1圖之塗布顯像處理系統之背面圖。 第4圖係本實施形態之顯像處理裝置之縱截面說明圖。 5 第5圖係本實施形態之顯像處理裝置之橫截面說明圖。 第6圖顯示顯像處理裝置内之支撐構件及刀刃環之構 成之立體圖。 第7圖係刀刃環之縱截面之說明圖。 第8圖係刀刃環之縱截面之說明圖。 10 第9圖係顯像液供給喷嘴之立體圖。 第10圖顯示在晶片搬入時，支撐構件支撐晶片之情形 之顯像處理裝置之縱截面說明圖。 第11圖顯示顯像液之盛液時及靜止顯像時，顯像處理 裝置之縱截面說明圖。 15 第12圖顯示晶片洗淨時，顯像處理裝置之縱截面說明 圖。 第13圖係具有洩液孔之支撐構件之立體圖。 第14圖係相對圓周方向傾斜設置支撐構件時之旋轉卡 盤及刀刃環之平面圖。 20 【實施方式】 為實施發明之較佳形態 以下說明本發明較佳的實施形態。第1圖顯示搭載本實 施形態處理裝置之塗布顯像處理系統1之構成的概略平面 圖，第2圖係塗布顯像處理系統1之正面圖，且第3圖係塗布 8 200409182 顯像處理系統1之背面圖。 如第1圖所示，塗布顯像處理系統1包含有下列一體連 接之結構，即：匣站2，係譬如以匣為單位由外部相對塗布 顯像處理系統1搬入搬出25張晶片W ;處理站3，係將在塗 5 布顯像處理步驟中平板式地實施一定的處理之各種處理裝 置配置形成多段；及界面部4，係在與相鄰該處理站3設置 之未圖示曝光裝置之間傳遞晶片。 在匣站2中，在成為載置部的匣載置台5上之一定位置 處，可自由地在X方向（第1圖中之上下方向）一列地載置複 10 數個匣C。而且，沿著搬送路8設置有可相對該匣配列方向 (X方向）與收容於匣C之晶片W之晶片配列方向（Z方向；垂 直方向）移動自如的可移動晶片搬送體7,且可相對各匣C選 擇性地存取。 晶片搬送體7具有實行晶片W對位之校準機能。該晶片 15 搬送體7，也能存取如後述處理站3側的第3處理裝置群G3 所屬之擴充裝置32。 在處理站3，於其中心部設置有主搬送袈置13，在該主 搬送裝置13周邊多段地配置各種處理裝置而構成處理裝置 群。在該塗布顯像處理系統1，配置四個處理裝置群G1、 20 G2、G3、G4，第1及第2處理裝置群Gl、G2配置於塗布顯 像處理系統1正面側，第3處理裝置群G3配置接鄰匣站2,第 4處理裝置群G4配置接鄰界面部4。或者，以虛線所示第5 處理裝置群G5另外可配置於背面側。主搬送裝置13相對配 置於該等處理裝置群Gl、G2、G3、G4、G5之後述各種處 9 200409182 理裝置可搬入晶片w。此外，處理裝置群之數目或配置因 施行於晶片w之處理種類而不同，處理裝置群之數目能隨 意選擇。 在第1處理裝置群G1，譬如，如第2圖所示，在晶片w 5塗布抗蝕液，從下面依序兩段地配置有在晶片W上形成抗 姓膜之抗餘塗布裝置17，與本實施形態之液處理裝置之顯 像處理裝置18。在第2處理裝置群a也同樣從下面依序兩段 地配置有抗蝕塗布裝置19與顯像處理裝置2〇。 在第3處理裝置群G3，譬如，如第3圖所示，從下面依 修 1〇序譬如六段地疊置冷卻處理晶片W之冷卻裝置30、用以提 高抗蝕液與晶片W固著性之黏合裝置31，用以實行晶片w 傳遞之擴充裝置32 ,用以蒸發抗敍液中溶劑之預烘培裝置 33、34，及貫施顯像處理後加熱處理之後烘培裝置％。 在第4處理裝置群G4,從下面依序譬如七段地疊置如冷 15卻裳置40，可自然冷卻載置之晶片W之擴充冷卻裝置41、 擴充裝置42、冷卻裝置43、實施曝光後加熱處理之後曝光 烘培裝置44、45、及後烘、歸置46。 · 在界面部4之中央部，如第1圖所示，譬如設置有晶片 搬送體50。該晶片搬送體50構成在X方向（第丨圖中之上下方 2〇向）、Z方向（垂直方向）之移動與0方向（z軸作為中心之旋轉 方向）之能轉動自如，相對屬於在第4處理裝置群G4之擴充 冷卻裝置41、擴充裝置42、周邊曝光裝置51及未圖示之曝 光裝置做存取，可分別對其搬送晶片W。 接著，詳細說明關於上述顯像處理裝置18之構成。如 10 第4、5圖所示，在顯像處理裝置18之箱18a内之中央部設置 有用以吸附保持晶片W的基板保持構件之旋轉卡盤60。如 第5圖所示’旋轉卡盤60之上面60a具有比晶片w直徑小的 圓形狀’並且水平地形成。在旋轉卡盤60之上面60a設置有 用以保持或用以釋放晶片之複數個吸引口 61，吸引口 61連 通未圖示之吸引裝置，由於來自該吸引口 61之吸引，旋轉 卡盤60能吸附晶片w之裏面中央部。 在旋轉卡盤60,設置有如第4圖所示用以轉動及升降該 旋轉卡盤60之驅動機構62。驅動機構62包含有譬如用以在 垂直方向之中心軸周圍以一定旋轉速度轉動旋轉卡盤60之 馬達等旋轉驅動部（未圖示）或用以一定距離升降旋轉卡盤 60之馬達，或氣/液壓缸等升降驅動部（未圖示）。因此，旋 轉卡盤60係可轉動自如且可升降自如。 在旋轉卡盤60周圍，設置有接住自晶片W飛散或落下 之液體並加以回收之杯70。杯70具有譬如包圍旋轉卡盤60 外方，主要接住飛散至晶片W外方的液體之側壁部71與覆 蓋晶片W裏面側主要接住由晶片W裏面側落下液體之下壁 部72。 側壁部71具有譬如上面與下面開口之略圓筒形狀，上 端部朝向内側傾斜。側壁部71可藉如未圖示之升降機構而 上下移動。下壁部72具有如比晶片W更大之直徑並形成略 圓盤形狀，且旋轉卡盤60貫通其中央部。在下壁部72 ’在 對向於保持在旋轉卡盤60之晶片W周緣部位置，形成有環 狀突部73。該突部73具有截面大略為三角形狀，且自其頂 200409182 上部73a朝向内側與外側傾斜。亦即，在保持於旋轉卡盤⑹ 之晶片W與下壁部72之間隙在頂上部73a變窄，且頂2部 73a高度可調整成使該間隙為，例如，ι·〇〜ΐ 5公厘。如此， 晶片W可簡於旋轉卡_，且在轉動時，顯像液等液體 由晶片W端部會轉入晶片貿裏面，能抑制晶片％裏面之污 染。 / 在下壁部72之突部73内側，環狀地形成用以接住由頂 上部73a流下的液體或自晶片w裏面直接落下的液體之凹 部74。在凹部74，開設排出接住的液體之排液口 74&，排液 1〇 口 74&通往連接下壁部K下部之排液管75。因此，在凹部74 接住之液體係由排液口 74a通過排液管排出裝置外。 在下壁部72與側壁部71之間，設置有環狀的間隙，該 間隙連接如環狀之排氣管76。排氣管76連通未圖示之氣液 分離機構或負壓發生裝置。藉此構造，杯7〇内之環境氣體 15或液體可由排氣管％ —起排出，然後可分離氣液。 在旋轉卡盤60外側，即，在突部73内側（凹部74上），設 置有支撐晶片W裏面之複數個，譬如，三個支撐構件。 支撐構件80係，如第5圖、第6圖所示，圍繞旋轉卡盤6〇之 中心軸以等間隔設置在同一圓周上。 2〇 支撐構件8〇係如第7圖所示，具有垂直板80a與由垂直 板8〇a下端部水平方向所形成之水平板8〇b，大致形成「乙」 子开v。與晶片W裏面接觸之接觸部的垂直板8〇&之上端部 8〇c係，如第5圖所示，從平面看為圓弧狀且形成線狀，並 且可以線接觸方式支撐晶片W。 12 200409182 各支撐構件80之上端部8〇c係設定成，在譬如丨公厘以 下見度，且譬如直徑300公厘之晶片w時，圓孤長度係1〇〜3〇 公厘（中心角12/圓周率（;r )〜36/圓周率（7r )。支撐構件肋之 材質係使用，如ΡΒΙ(聚苯併咪唑：如商標名為七今/一小 5 者）專硬質樹脂之比晶片W還硬之材質。 如第6圖、第7圖所示’支樓構件8〇係藉安裝構件之螺 釘81，可裝卸安裝於作為防止黏附構件之刀刃環“上。刀 刃環82係形成環狀。又，刀刃環82之縱截面形成略三角形 狀，且包含突出上側之銳角頂點部82a，自其頂部82a形成 鲁 10於内側之傾斜面82b，及形成於頂點部82a外側之垂直面 82c。在傾斜面82b上形成有與支撐構件8〇同樣數目之凹陷 部82d，且别述支撐構件80係安裳於凹陷部82d中。 頂點部82a係位於比支樓構件8〇之上端部略低之位 置，譬如形成於低1公厘的位置。如第7圖所示，當支撐構 15件80支撐晶片W之際，頂點部82a接近晶片w裏面，且在頂 點部82a與晶片W之間，形成如ι·5公厘〜1〇公厘間隙之狹小 間隙D。一旦液體進入該頂點部82a與晶片w裏面之間隙D， # 則間隙D將由於液體之表面張力而成為閉鎖狀態。因此，藉 刀刃環82遮斷朝向内側流向晶片|裏面的液體，可防止因 20 該液體而污染支撐構件80或旋轉卡盤6〇。 在刀刃環82之垂直面82c，形成有突出外側之複數個， 譬如，三個卡止部83，且支撐棒84可卡止在該各卡止部幻。 如第4圖所示，各支撐棒84貫通下壁部72，且與作為配置於 下壁部72下方的驅動部之升降驅動部85連動。該升降驅動 13 部85係可使各支撐棒84上下移動一定距離，以將一體化之 刀刃環82與支撐構件8〇升降至一定位置。因此，可藉支撐 構件80將晶片w支撐在旋轉卡盤60上方。又，可使刀刃環 82接近晶片W晨面。 如第6圖、第8圖所示，在刀刃環82之傾斜面82b上，固 疋5又置用以洗淨頂點部82a之環形洗淨喷嘴9〇。環形洗淨喷 嘴90係朝向上方，可相對頂點部82a梢微内側之晶片w裏面 吐出洗淨液。此時，藉由轉動晶片w，可使洗淨液朝向外 側流到晶片w裏面，並供給洗淨液至黏附於頂點部82a之液 體。在傾斜面82b，譬如形成貫通孔91，在環形洗淨喷嘴9〇 供給洗淨液之洗淨液供給管92係通過該貫通孔91内。 如弟4圖所示，當在刀刃環82側在下壁部72之突部73 内側’ δ又置有供給洗淨液至晶片界裏面，用以洗淨晶片界 裏面之裏面洗淨喷嘴93。 如第5圖所示，杯70之一外方側，譬如在γ方向正方向 側（第5圖上側），設置有喷嘴待機部τ。在該喷嘴待機部τ， 用以供給作為相對晶片W處理液之顯像液之顯像液供給喷 嘴100待機。 顯像液供給喷嘴100係如第9圖所示，具有比晶片w直 徑長，細寬形狀，在其下面，順著縱向形成複數個吐出口 101。顯像液供給喷嘴100上部連接顯像液供給管，且從 顯像液供給噴嘴100上部流入通過顯像液供給噴嘴100内部 之顯像液，從各吐出口 101可均等地吐出。 如第5圖所示，顯像液供給噴嘴1〇〇係以臂1〇2保持，且 200409182 臂1〇2可在順著γ方向鋪設之軌道·上移動。臂收可藉由 具有譬如馬達等之臂驅動部1〇4，在軌道1〇3上移動。^道 103係由噴嘴待機部丁側延伸到夾住杯川相反側之洗淨喷嘴 待機部U，且顯像液供給噴嘴1〇〇至少能自喷嘴待機部丁移 5 動到杯70相反侧。 顯像液供給噴嘴100係縱向朝向X方向那樣被保持於臂 102 ’顯像液供給噴嘴1〇〇由各吐出口 1〇1吐出顯像液，並且 由於通過晶片W上而可供給顯像液至晶片…表面全面。此 外，臂102具有未圖示之升降機構，可配合需要調節顯像液春 10 供給喷嘴100之高度。 在杯70之Υ方向負方向側（第5圖下側）外方，設置有供 給洗淨液至晶片W表面之洗淨噴嘴11〇之洗淨喷嘴待機部 U。洗淨喷嘴110保持於沖洗臂^，該沖洗臂1Π藉驅動部 112與别述臂102同樣在軌道1〇3上可移動。洗淨喷嘴ho當 15於杯70内之晶片W上移動之際，係以沖洗臂111加以保持並 位於晶片W中心部。 接著，將如以上所構成之顯像處理裝置18之作用與以 · 塗布顯像處理系統1實施之微影成像法步驟之過程一起說 明之。 20 首先由晶片搬送體7從匣C取出一張未處理的晶片W， 搬送至第3處理裝置群G3所屬擴充裝置32。接著，晶片W藉 主搬送裝置13搬入黏合裝置31，並相對晶片w塗布，譬如 六甲基二石夕胺(烧)(HMDS)以提南抗钱液密合性。接著，晶 片W係搬送至冷卻裝置30，冷卻至一定溫度之後，再搬送 15 至抗餘塗布裝置17。在抗蝕塗布處理裝置17形成抗蝕膜之 晶片W藉主搬送裝置13依序搬送至預烘焙裝置33，擴充冷 部&置41 ’而且藉晶片搬送體5〇，依序搬送至周邊曝光裝 置51、曝光裝置（未圖示），並在各裝置實施一定的處理。曝 光處理完畢之晶片W由晶片搬送體50搬送至擴充裝置42， 接著以後曝光烘焙裝置44、冷卻裝置43實施一定的處理之 後，搬送至顯像處理裝置18，進行顯像處理。 在顯像處理裝置18顯像處理完畢之晶片w依序搬送至 後烘焙裝置46、冷卻裝置30，在各裝置實施一定的處理， 接者’經由擴絲置32退回，結束—㈣的微影成像法 步驟。 接著，詳細說明關於在上述顯像處理裝置18進行之晶 片W之顯像處理。首先，晶片w藉主搬送裝置⑶般入箱他 内’如第1GBI所示，被支撐於事先上升至旋轉卡盤⑼上待 機之支撐構件8〇上。此時藉支撐構件⑽赠接觸方式支撐 晶片W。又，在刀刃環82與晶片w之間形成狹小的間隙β。 其次，下降支撐構件80,如第u圖所示，晶片w下降 到顯像液盛液位置。盛液位置在譬如，比旋轉卡盤6〇高的 位置，可設定由旋轉卡盤6〇上面_離開，譬如3〜丨丨公厘的 位置。該盛液位置也可隨晶片1上的抗軸種類而改變。 又，此時，側壁部71上端部與晶片w位於同樣高度，使晶 片W覆蓋側壁部71開口部。 若將晶支撐在盛餘置，醜像液供給噴嘴刚自 喷嘴待機部T移動到晶片WY方向正方向側端微前 200409182 方。在此位置，從顯像液供給喷嘴100吐出顯像液，實施顯 像液之所謂自由計量分配。 接著，在繼續吐出顯像液狀態下，顯像液供給嘴嘴1 〇〇 從晶片W—端部上移動到另一端部上，在晶片W表面全面 5 可供給顯像液。如此做，晶片W離隔旋轉卡盤60，且曰y 曰曰乃 W以線接觸支撐於支撐構件80狀態下，在晶片…上形成顯 像液之盛液，此時，假如即使顯像液由晶片W上返回晶片 W裏面，由刀刃環82亦可遮斷顯像液，不會有顯像液污染 支撐構件80之情形。 10 15 若在晶片W上形成顯像液之盛液並且顯像液供給喷嘴 1〇〇由晶片w上退避，則譬如，側壁部71上升，並以側壁部 71覆蓋晶片W外周。在支撐於支撐構件8〇狀態下，晶片w 在盛液位置可維持一定時間，譬如60秒鐘。由此，可實行 曰曰片W之靜止顯像。如此，即使在靜止顯像，當在離開旋 轉卡之位置’亦可藉支撐構件⑽以線接觸方式支撑晶 叹—VV之靜止顯像結束時，則如第12圖所示 1 冓牛再度下降，晶片w可載置於旋轉卡盤6。上。此外： 20说明 Description of the invention: [Technical field 3 to which the invention belongs] TECHNICAL FIELD The present invention relates to a liquid processing device. BACKGROUND OF THE INVENTION For example, in a lithography imaging step in the manufacturing process of a semiconductor device, a resist liquid is applied to a semiconductor wafer (hereinafter referred to as a "wafer"), and a resist coating process is performed to form an anti-film. For the exposure processing of the exposed circuit pattern, a developing solution is supplied on the wafer after the exposure, and the developing process of the still image of the wafer is processed. Finally, a certain circuit pattern can be formed on the wafer. In the above-mentioned developing process, for example, a step of supplying a developing solution to a tablet and forming a developing solution holding solution on a wafer is performed; in a state where the developing solution holding solution is formed on a wafer, The wafer is subjected to a stationary development step of stationary development for a certain period of time; and a wafer cleaning step of rotating the wafer at the end of the stationary development and supplying cleaning liquid to the rotated wafer to clean the wafer. Until now, the above-mentioned developing solution holding step was performed by holding the crystal 4 on the rotary chuck with surface contact rhyme, rotating the work chuck, while rotating the wafer, and supplying the developing solution to the wafer. The above-mentioned still developing step B, a is carried out by continuing to keep ⑸ on the turntable. However, the portion of the chuck that is in contact with the non-contact portion in the wafer surface will have different wafer temperatures due to the different heat from the chuck material. Therefore, the temperature of the developing solution on the wafer is different from that of other parts on the wafer surface, and the developing speed is different in the wafer surface. As a result, in the case of wafer 200409182, the unevenness of the surface and the shape of the image, and the width of the circuit pattern formed at the end will be inconsistent. In order to solve this problem, in the developing solution step, at the time of stationary development, each wafer is cut into a retaining chuck without holding the pin, and the developing process is performed in a state where the rotating chuck is separated from the wafer. _Development processing side *, 'Page image processing 1 set (4, for example, Japanese Patent Publication No. 2001-102298). 10 15…, while using the development processing method disclosed in the above publication, the development step is at the surface of the developing solution. When the image is still developed, the wafer is only held by the pin with a thin protrusion, and the wafer is prone to occur. Deviation. In particular, in the liquid-receiving step of the developing solution, if the wafer is supported by the holding pins, the crystal cannot be rotated like the chuck as described above. Therefore, the developing-solution supplying nozzle side must be moved while the developing solution is supplied. Therefore, the imaging liquid dropped onto the wafer has a velocity component in the axis direction of the fairy when the wafer is supplied, and the wafer is also easily affected by the velocity component. In addition, if a wafer deviation occurs, the imaging liquid cannot be properly supplied. To wafer i, and it is not possible to carry the wafer properly. Also, if a M white level 4 Shi ai, if the Japanese and Japanese film self-retaining pins fall, it will cause damage to the wafer and device failure. L ^^ 明 内容; j 20 SUMMARY OF THE INVENTION The present invention has been made in view of such a situation, and an object of the present invention is to provide a substrate including a wafer. When a processing liquid such as a developing solution is supplied to perform a liquid processing on the substrate, the substrate can be uniformly held in the surface of the substrate. Liquid processing device capable of suppressing substrate temperature deviation while processing liquid temperature. 6 The present invention is a liquid processing device for supplying processing liquid on a substrate to perform liquid processing on the substrate. A supporting member for supporting a substrate supplied with a processing liquid. According to the present invention, when a substrate is supplied with a processing liquid, or thereafter, a supporting member can be used to cut the substrate in a contact manner. Therefore, the in-plane temperature of the processing liquid supplied on the substrate, 0 Affects the substrate holding member such as the job chuck, which can uniformly perform the liquid treatment of the processing liquid in the substrate surface. In addition, because the support base can be contacted by wire, the substrate is not easy to use because the pin is used In the present invention, it may further include: a substrate holding member that holds a portion different from a portion of the substrate supported by the support member and rotates the substrate; and the support member and the substrate holding member A driving unit that moves relatively in the up and down direction. In this way, for example, when the substrate is subjected to a liquid cleaning step or a drying step, the substrate is transferred from the supporting member to the substrate holding member, and the substrate can be rotated while the substrate is held in a stable state. Also, for example, even if the substrate moves in a state supported by the supporting member, since the substrate is supported in a line contact manner, and It is known that the holding pins can also suppress the deviation of the substrate. In addition, in the present invention, there are a plurality of the aforementioned supporting members, and the supporting members are arranged at equal intervals on the substrate center as viewed from the plane below the substrate. The center of the circle is on the same circle, so substrate deviation in all directions in the horizontal direction can be appropriately suppressed. The figure briefly illustrates the first figure. The figure shows the structure of a coating processing system equipped with a development processing device such as this embodiment. A schematic plan view. Fig. 2 is a front view of the coating development processing system of Fig. 1. Fig. 3 is a back view of the coating development processing system of Fig. 1. Fig. 4 is a view of the development processing apparatus of this embodiment. Longitudinal section explanatory diagram. 5 FIG. 5 is a cross-sectional explanatory diagram of the developing processing apparatus of this embodiment. FIG. 6 is a perspective view showing the configuration of the supporting member and the blade ring in the developing processing apparatus. An illustration of a longitudinal section. Fig. 8 is an explanatory view of a longitudinal section of the blade ring. 10 FIG. 9 is a perspective view of a developing liquid supply nozzle. Fig. 10 is an explanatory longitudinal sectional view of a development processing apparatus showing a state in which a supporting member supports a wafer when the wafer is carried in. Fig. 11 is an explanatory view showing a longitudinal section of the developing processing device when the developing solution is held in a liquid state and during stationary developing. 15 Fig. 12 shows a longitudinal sectional view of a development processing apparatus during wafer cleaning. Fig. 13 is a perspective view of a supporting member having a drain hole. Fig. 14 is a plan view of the rotary chuck and the blade ring when the supporting member is inclined with respect to the circumferential direction. [Embodiment] A preferred embodiment for carrying out the invention A preferred embodiment of the present invention will be described below. FIG. 1 is a schematic plan view showing the configuration of a coating development processing system 1 equipped with the processing apparatus of this embodiment, FIG. 2 is a front view of the coating development processing system 1, and FIG. 3 is a coating 8 200409182 development processing system 1. Back view. As shown in FIG. 1, the coating imaging processing system 1 includes the following integrally connected structure, namely: the cassette station 2 is moved in and out of 25 wafers W from the outside to the coating imaging processing system 1 in a cassette unit; processing Station 3 is a multi-stage configuration of various processing apparatuses that perform a certain process in a flat plate in the 5 coating development process step; and interface section 4 is an unillustrated exposure apparatus installed adjacent to the processing station 3 Pass the wafer between. In the cassette station 2, a plurality of cassettes C can be freely placed in a row in the X direction (upward and downward directions in the first figure) at a predetermined position on the cassette mounting table 5 serving as a mounting portion. Furthermore, a movable wafer transfer body 7 is provided along the transfer path 8 and can move freely with respect to the cassette arrangement direction (X direction) and the wafer arrangement direction (Z direction; vertical direction) of the wafer W accommodated in the cassette C, and can be moved. Selective access to each cassette C. The wafer transfer body 7 has a calibration function for performing wafer W alignment. The wafer 15 carrier 7 can also access the expansion device 32 to which the third processing device group G3 of the processing station 3 side will be described later. The processing station 3 is provided with a main transfer unit 13 at the center thereof, and various processing apparatuses are arranged in multiple sections around the main transfer apparatus 13 to form a processing apparatus group. In this coating development processing system 1, four processing device groups G1, 20 G2, G3, G4 are arranged, and the first and second processing device groups G1, G2 are located on the front side of the coating development processing system 1, and the third processing device The group G3 is configured to be adjacent to the box station 2, and the fourth processing device group G4 is configured to be adjacent to the interface section 4. Alternatively, the fifth processing device group G5 shown by a dotted line may be disposed on the back side. The main transfer device 13 is relatively disposed in the processing device groups G1, G2, G3, G4, and G5. The processing device can carry the wafer w. In addition, the number or arrangement of processing device groups differs depending on the type of processing performed on the wafer w, and the number of processing device groups can be arbitrarily selected. In the first processing device group G1, for example, as shown in FIG. 2, a wafer w 5 is coated with a resist solution, and an anti-residue coating device 17 for forming an anti-surname film on the wafer W is arranged in two stages from below, The development processing device 18 is the same as the liquid processing device of this embodiment. Similarly, in the second processing apparatus group a, a resist coating apparatus 19 and a development processing apparatus 20 are arranged in two stages in order from below. In the third processing device group G3, for example, as shown in FIG. 3, the cooling device 30 for stacking the cooling process wafers W in six stages, such as six steps, is repaired from the bottom in order to improve the adhesion of the resist solution to the wafers W. The adhesive device 31 is an expansion device 32 for carrying out the transfer of the wafer w, a pre-baking device 33, 34 for evaporating the solvent in the anti-sewing solution, and a baking device% after applying the imaging treatment and heating treatment. In the fourth processing device group G4, an expansion cooling device 41, an expansion device 42, a cooling device 43, and a cooling device 43, which can naturally cool the mounted wafer W, are stacked in the order of seven sections, such as cold 15 and 40, for example, from the bottom. After the post-heating treatment, the exposure baking devices 44 and 45 and the post-baking and placing 46 are performed. As shown in Fig. 1, a center portion of the interface portion 4 is provided with a wafer transfer body 50, for example. The wafer carrier 50 is freely rotatable in the X direction (the upper and lower 20 directions in the figure), the Z direction (the vertical direction), and the 0 direction (the rotation direction with the z axis as the center). The expansion cooling device 41, the expansion device 42, the peripheral exposure device 51, and the exposure device (not shown) of the fourth processing device group G4 can access the wafers W respectively. Next, the configuration of the development processing device 18 will be described in detail. As shown in Figs. 4 and 5, a rotary chuck 60 for holding a substrate holding member for holding and holding the wafer W is provided at a central portion of the case 18a of the developing processing apparatus 18. As shown in Fig. 5, 'the upper surface 60a of the spin chuck 60 has a circular shape smaller than the diameter of the wafer w' and is formed horizontally. A plurality of suction ports 61 for holding or releasing the wafer are provided on the upper surface 60a of the spin chuck 60. The suction port 61 communicates with a suction device (not shown). Due to the suction from the suction port 61, the spin chuck 60 can absorb The central part of the inside of the wafer w. The spin chuck 60 is provided with a drive mechanism 62 for rotating and lifting the spin chuck 60 as shown in FIG. The driving mechanism 62 includes, for example, a rotation driving unit (not shown) such as a motor for rotating the spin chuck 60 at a certain rotation speed around a vertical center axis, or a motor for raising and lowering the spin chuck 60 by a certain distance, or / Hydraulic drive unit (not shown) such as a hydraulic cylinder. Therefore, the spin chuck 60 is rotatable and liftable. Around the spin chuck 60, a cup 70 is provided to catch and collect the liquid scattered or dropped from the wafer W. The cup 70 has, for example, a side wall portion 71 which surrounds the outside of the spin chuck 60 and mainly receives the liquid scattered to the outside of the wafer W, and an inner side of the cover wafer W mainly receives the lower wall portion 72 which drops the liquid from the inner side of the wafer W. The side wall portion 71 has, for example, a substantially cylindrical shape with upper and lower openings, and the upper end portion is inclined toward the inside. The side wall portion 71 can be moved up and down by a lifting mechanism (not shown). The lower wall portion 72 has a diameter larger than that of the wafer W and is formed into a slightly disc shape, and the spin chuck 60 penetrates a central portion thereof. A ring-shaped projection 73 is formed on the lower wall portion 72 'at a position facing the periphery of the wafer W held on the spin chuck 60. The protrusion 73 has a substantially triangular shape in cross section, and is inclined from the top to the inside and outside from the top portion 200409182. That is, the gap between the wafer W held on the spin chuck ⑹ and the lower wall portion 72 is narrowed at the top portion 73a, and the height of the top 2 portion 73a can be adjusted so that the gap is, for example, ι · 〇 ~ ΐ 5 cm Centimeters. In this way, the wafer W can be simpler than the rotating card, and during the rotation, liquid such as a developing liquid is transferred from the end of the wafer W into the wafer chamber, and contamination inside the wafer can be suppressed. / On the inside of the protrusion 73 of the lower wall portion 72, a recess 74 is formed annularly to catch the liquid flowing down from the top upper portion 73a or the liquid directly falling from the inside of the wafer w. In the recessed portion 74, a drain port 74 & for draining the caught liquid is opened, and a drain port 10 & leads to a drain pipe 75 connected to the lower portion of the lower wall portion K. Therefore, the liquid system caught in the recess 74 is discharged out of the apparatus through the liquid discharge port 74a through the liquid discharge pipe. An annular gap is provided between the lower wall portion 72 and the side wall portion 71, and the gap is connected to an annular exhaust pipe 76, for example. The exhaust pipe 76 communicates with a gas-liquid separation mechanism or a negative pressure generating device (not shown). With this configuration, the ambient gas 15 or liquid in the cup 70 can be discharged from the exhaust pipe%, and then the gas and liquid can be separated. On the outside of the spin chuck 60, that is, on the inside of the protrusion 73 (on the recess 74), a plurality of, for example, three supporting members are provided to support the wafer W inside. As shown in Figs. 5 and 6, the supporting members 80 are arranged on the same circumference at equal intervals around the central axis of the spin chuck 60. 20 The support member 80 is provided with a vertical plate 80a and a horizontal plate 80b formed in a horizontal direction from the lower end portion of the vertical plate 80a, as shown in FIG. 7, to approximately form a "B" opening v. The vertical plate 80 and the upper end portion 80c of the contact portion in contact with the inside of the wafer W, as shown in FIG. 5, are arc-shaped and linear when viewed from a plane, and can support the wafer W in a line contact manner. . 12 200409182 The upper end portion 80c of each support member 80 is set to a length of 10 to 30 mm (center angle) when the visibility is, for example, less than 丨 mm, and the wafer w has a diameter of 300 mm, for example. 12 / pi (~ r) ~ 36 / pi (7r). The material of the ribs of the supporting member is used, such as PB1 (polybenzimidazole: as the brand name is seven today / one small 5) than the special hard resin ratio wafer W It is a hard material. As shown in Figures 6 and 7, the 'bracket member 80 is a screw 81 of the mounting member and can be detachably mounted on the blade ring as an anti-adhesion member.' The blade ring 82 is formed in a ring shape. In addition, the longitudinal section of the blade ring 82 is formed in a slightly triangular shape, and includes an acute-angled vertex portion 82a protruding from the upper side, an inclined surface 82b on the inner side from the top portion 82a, and a vertical surface 82c formed on the outer side of the vertex portion 82a. The inclined surface 82b is formed with the same number of recessed portions 82d as the supporting member 80, and the supporting member 80 is installed in the recessed portion 82d. The apex portion 82a is located slightly lower than the upper portion of the supporting member 80. Position, such as formed at a position lower than 1 mm. As shown in Figure 7 It is shown that when the support structure 15 supports the wafer W, the apex portion 82a is close to the inside of the wafer w, and a narrow gap D such as ι · 5 mm to 10 mm is formed between the apex portion 82a and the wafer W. Once the liquid enters the gap D between the vertex portion 82a and the wafer w, #, the gap D will be locked due to the surface tension of the liquid. Therefore, the blade ring 82 blocks the liquid flowing toward the wafer | The liquid 20 contaminates the support member 80 or the spin chuck 60. On the vertical surface 82c of the blade ring 82, a plurality of protruding outer sides are formed, for example, three locking portions 83, and the supporting rod 84 can be locked on As shown in FIG. 4, each of the supporting rods 84 penetrates the lower wall portion 72 and interlocks with a lift driving portion 85 which is a driving portion disposed below the lower wall portion 72. The lift driving 13 portions 85 The support rods 84 can be moved up and down a certain distance to raise and lower the integrated blade ring 82 and the support member 80 to a certain position. Therefore, the wafer w can be supported above the spin chuck 60 by the support member 80. Also, The blade ring 82 can be brought close to the wafer W morning face. As shown in Figs. 6 and 8, on the inclined surface 82b of the blade ring 82, the solid ring 5 is provided with a ring-shaped cleaning nozzle 90 for cleaning the apex portion 82a. The ring-shaped cleaning nozzle 90 is directed upward, and The cleaning liquid is discharged from the wafer w slightly inside the tip of the opposite vertex portion 82a. At this time, by rotating the wafer w, the cleaning liquid can flow toward the outside into the wafer w, and the cleaning liquid is supplied to the surface of the vertex portion 82a. Liquid. For example, a through hole 91 is formed on the inclined surface 82b, and a cleaning liquid supply pipe 92 for supplying cleaning liquid to the annular cleaning nozzle 90 passes through the through hole 91. As shown in FIG. On the 82 side, inside the protrusion 73 of the lower wall portion 72, 'δ is provided with a cleaning liquid supply cleaning wafer 93 to clean the inside of the wafer boundary. As shown in FIG. 5, a nozzle standby portion τ is provided on the outer side of one of the cups 70, for example, on the positive side in the γ direction (upper side in FIG. 5). In this nozzle standby portion τ, a developing liquid supply nozzle 100 for supplying a developing liquid as a processing liquid for the wafer W is on standby. As shown in Fig. 9, the developing liquid supply nozzle 100 has a diameter longer than that of the wafer w, and has a thin and wide shape. A plurality of discharge ports 101 are formed in the longitudinal direction below the wafer w. The developing solution supply nozzle 100 is connected to the developing solution supply pipe at the upper part, and the developing solution flowing into the developing solution supply nozzle 100 from the upper part of the developing solution supply nozzle 100 can be uniformly discharged from each discharge port 101. As shown in FIG. 5, the developing solution supply nozzle 100 is held by the arm 102, and the 200409182 arm 100 can move on a track · that is laid in the γ direction. The arm retractor can be moved on the track 103 by having an arm drive unit 104 such as a motor. ^ Channel 103 extends from the nozzle standby portion T side to the cleaning nozzle standby portion U sandwiching the opposite side of the cup, and the developing liquid supply nozzle 100 can move at least 5 from the nozzle standby portion D to the opposite side of the cup 70 . The developing solution supply nozzle 100 is held by the arm 102 so that the longitudinal direction is in the X direction. The developing solution supply nozzle 100 discharges the developing solution from each of the discharge ports 101, and can supply the developing solution through the wafer W. To the wafer ... the surface is comprehensive. In addition, the arm 102 has a lifting mechanism (not shown), which can adjust the height of the supply nozzle 100 of the developing liquid spring 10 as needed. A cleaning nozzle standby unit U is provided on the outside of the negative direction side (lower side in Fig. 5) of the cup 70 in the cleaning nozzle 11 for supplying cleaning liquid to the surface of the wafer W. The cleaning nozzle 110 is held by a flushing arm ^, and the flushing arm 1 is movable on the track 10 by the driving part 112 like the other arm 102. When the cleaning nozzle ho is moved on the wafer W in the cup 70, it is held by the flushing arm 111 and located at the center of the wafer W. Next, the function of the development processing device 18 constituted as described above will be explained together with the process of the lithography imaging method step performed by the coating development processing system 1. 20 First, an unprocessed wafer W is taken out of the cassette C by the wafer transfer body 7 and transferred to the expansion device 32 to which the third processing device group G3 belongs. Then, the wafer W is carried into the bonding device 31 by the main transfer device 13 and is coated on the wafer w, such as hexamethyldistilbene (fired) (HMDS), to improve the anti-money liquid adhesiveness. Next, the wafer W is transferred to a cooling device 30, and after being cooled to a certain temperature, it is further transferred 15 to a residual coating device 17. The wafers having the resist film formed on the resist coating processing device 17 are sequentially transferred to the pre-baking device 33 by the main transfer device 13, the cold section & 41 ′ is expanded, and the wafer transfer body 50 is sequentially transferred to the peripheral exposure. The device 51 and an exposure device (not shown) perform a certain process on each device. The wafer W that has undergone the exposure processing is transferred from the wafer transfer body 50 to the expansion device 42. After the exposure baking device 44 and the cooling device 43 perform a certain process, the wafer W is transferred to the development processing device 18 for development processing. The wafers w processed and developed in the development processing device 18 are sequentially transferred to the post-baking device 46 and the cooling device 30, and a certain process is performed in each device. The receiver is returned via the expansion device 32 and ends. Imaging steps. Next, the development processing of the wafer W performed by the development processing device 18 will be described in detail. First, the wafer w is put into the box by the main transfer device ⑶ 'as shown in the first GBI, and is supported on a supporting member 80 which is raised to the stand-by on the rotary chuck 事先 in advance. At this time, the wafer W is supported by the support member in a contact manner. A narrow gap β is formed between the blade ring 82 and the wafer w. Next, as shown in Fig. U, the supporting member 80 is lowered, and the wafer w is lowered to the developing solution holding position. The liquid holding position is, for example, a position higher than the spin chuck 60, and it can be set to be away from the spin chuck 60, for example, a position of 3 to 丨 丨 mm. The liquid holding position can also be changed according to the type of anti-axis on the wafer 1. At this time, the upper end portion of the side wall portion 71 is positioned at the same height as the wafer w, so that the wafer W covers the opening portion of the side wall portion 71. If the crystal is supported in the surplus space, the ugly image liquid supply nozzle is moved from the nozzle standby portion T to the front side of the wafer in the positive direction in the WY direction. At this position, the developer is discharged from the developer supply nozzle 100, and the so-called free metering of developer is performed. Then, in a state where the developing solution is continuously ejected, the developing solution supply nozzle 100 moves from the end of the wafer W to the other end, and the developing solution can be supplied on the entire surface of the wafer W 5. In this way, the wafer W is separated from the rotary chuck 60, and y is said to be supported by the support member 80 in a line contact, and a developing solution containing liquid is formed on the wafer. At this time, if the developing solution is replaced by the developing solution, The wafer W is returned to the inside of the wafer W, and the developing liquid can be blocked by the blade ring 82, and the developing member will not be contaminated by the developing liquid. 10 15 If a liquid containing a developing solution is formed on the wafer W and the developing solution supply nozzle 100 is withdrawn from the wafer w, for example, the side wall portion 71 rises and the outer periphery of the wafer W is covered with the side wall portion 71. In the state of being supported by the supporting member 80, the wafer w can be maintained in the liquid holding position for a certain time, such as 60 seconds. Thereby, still imaging of the film W can be performed. In this way, even in the still development, when the position of the rotating card is left, the crystal sigh can be supported by the support member 线 in a linear contact manner. When the static development of VV ends, as shown in Figure 12, 1 yak descends again. The wafer w can be placed on the spin chuck 6. on. In addition: 20
=:::過之前，可推定顯像處理大體上結束:間 轉卡盤避㈣你訂降切構件8G，做成在旋 二 則來 構件⑽下降到與晶…轉卡伽。支撑 f位置。此時旋轉卡盤60上之 17 200409182 晶片W與刀刃環82之頂點部82a之間保持在ΐ·5〜1·〇公厘的 狹窄間隔。設晶片W保持於旋轉卡盤60，則洗淨喷嘴11〇移 動到晶片W中心部上方，開始吐出洗淨液，譬如純水至晶 片W。此時，晶片W被轉動，由純水洗淨晶片w上之顯像液。 5又，從裏面洗淨喷嘴93也吐出純水，也可洗淨晶片W裏面。 接著，停止來自洗淨喷嘴110與裏面洗淨喷嘴93之純水 供給，繼續提高晶片W之旋轉速度。如此實行晶片|之挣 脫乾燥。此時如第8圖所示，可吐出來自設置於刀刃環82内 側之環形洗淨喷嘴90之洗淨液，譬如純水。由環形洗淨噴 春 10嘴9〇所吐出之純水順著晶片貿裏面，到達刀刃環82之頂點 部82a，可除去黏附於頂點部82a之顯像液或其他附著物。 從曰曰片W落下之純水等液體收集在下壁部72之凹部74，由 排液口 74a排出。 停止來自環形洗淨噴嘴90之純水供給，設因晶片w高 15速旋轉致晶片w乾燥，則可停止晶片之旋轉。晶片W譬如 罪旋轉卡盤可上升，從旋轉卡盤6〇傳遞至主搬送裝置13， 由主搬送裝置13搬出顯像處理裝置18外。如此做結束一系 泰 列的晶片W顯像處理。 根據以上實施形態，由於在顯像處理裝置18，設有以 2〇線接觸支撐晶片W之支撐構件80,在自旋轉卡盤60分離晶 片W狀態下，能施行顯像液之盛液及靜止顯像。因此，晶 片W上顯像液溫度並不受旋轉卡盤60溫度之影響，在晶片 W内可維持均一。因此’在晶片W内能均-地實施顯像處 理而且由於藉支撐構件80可以線接觸方式支撐晶片w， 18 200409182 與點接觸相較可抑制晶片…之偏離， 盛液或靜止顯像。 可適當實行顯像液之 10 行 由於藉 升降驅動部85可升降切構件80, 能適合的實 支撐構件80與旋轉卡盤60之間晶片w」 由於在同-圓周上等間隔配置三只支樓構件8〇 、=片W下降時，在盛液狀態下降時及處理結束後在 :二二能抑制朝水平方向任-方向晶片W之偏離。支: 構件80由於具有#直_樓垂直咖a” 向所形成之水平板動，支撐構件8〇係以螺絲等安裝構件: 裝於水平板8%，能將支樓構件⑽^於—定地方。因此 不接觸《板8_實施拆卸切構糊，料染或破損直 接支撐基板之垂直板8〇a情形。 「之傳遞= ::: Before, it can be presumed that the development processing is basically over: the intermediate turn chuck avoids you ordering the cutting member 8G, and it is made in the second spin. Support f position. At this time, the 17 200409182 wafer W on the spin chuck 60 and the vertex portion 82a of the blade ring 82 are kept at a narrow interval of ΐ · 5 ~ 1 · 0 mm. Assuming that the wafer W is held on the spin chuck 60, the cleaning nozzle 110 is moved above the center of the wafer W, and the cleaning liquid, such as pure water, is started to the wafer W. At this time, the wafer W is rotated, and the developing solution on the wafer w is washed with pure water. 5. Also, pure water is discharged from the cleaning nozzle 93 from the inside, and the inside of the wafer W can also be washed. Next, the supply of pure water from the cleaning nozzle 110 and the inner cleaning nozzle 93 is stopped, and the rotation speed of the wafer W is continuously increased. In this way, the wafer is freed from drying. At this time, as shown in Fig. 8, the cleaning liquid such as pure water from the annular cleaning nozzle 90 provided on the inner side of the blade ring 82 can be discharged. The pure water spouted from the ring-shaped washing spray spring 10 mouth 90 will follow the inside of the wafer and reach the apex portion 82a of the blade ring 82 to remove the imaging liquid or other attachments adhering to the apex portion 82a. Liquid such as pure water falling from the tablet W is collected in the recessed portion 74 of the lower wall portion 72 and is discharged through the liquid discharge port 74a. If the supply of pure water from the annular cleaning nozzle 90 is stopped and the wafer w is dried due to the high-speed rotation of the wafer w at 15 speeds, the rotation of the wafer can be stopped. The wafer W can be lifted, for example, by a spin chuck, and transferred from the spin chuck 60 to the main transfer device 13, and the main transfer device 13 is carried out of the development processing device 18. In this way, a series of wafer W development processing of a series of chips is finished. According to the above embodiment, since the developing processing device 18 is provided with the supporting member 80 that supports the wafer W in a 20-line contact, the wafer W can be held and stopped while the wafer W is separated from the spin chuck 60. Develop. Therefore, the temperature of the developing solution on the wafer W is not affected by the temperature of the spin chuck 60, and uniformity can be maintained in the wafer W. Therefore, development processing can be performed uniformly in the wafer W and since the wafer w can be supported by the support member 80 in a line contact manner, compared with point contact, the deviation of the wafer can be suppressed, and liquid or static development can be performed. The 10 rows of developing liquid can be properly implemented. Because the cutting member 80 can be raised and lowered by the lifting driving unit 85, the wafer w between the solid supporting member 80 and the spin chuck 60 can be appropriately fitted. When the floor member 80 and the sheet W are lowered, when the liquid holding state is lowered and after the treatment is completed, the deviation of the wafer W in the horizontal direction in any direction can be suppressed. Support: As the member 80 has # 直 _ 楼 直 咖 a ”to move to the horizontal plate formed, the supporting member 80 is a mounting member such as a screw: It is installed on the horizontal plate 8%, and the supporting member can be fixed at a fixed position. Place. Therefore, it is not in contact with "Board 8_ implementation of disassembly and cutting paste, dyeing or damage to the vertical plate 80a directly supporting the substrate."
由於在支撑構件80外側設置有刀刀環们，能防止順著 晶片W晨面之顯像液黏附於支擇構件⑽。由於支撐構件如 15安裝於刀刀環82，藉前述升降驅動部85能升降支撐構件8〇 與刀刀環82雙方。因此，無須各自設置升降驅動⑽，可 簡化驅動系。 在刀刃環82,由於設置環形洗淨喷嘴9〇,能洗掉黏附 於刀刃環8 2之顯像液。職果，能防止來自^環8 2之微 20Since knife and knife rings are provided on the outside of the support member 80, it is possible to prevent the developing liquid along the morning surface of the wafer W from adhering to the support member ⑽. Since the supporting member 15 is mounted on the knife ring 82, both the supporting member 80 and the knife ring 82 can be raised and lowered by the aforementioned raising and lowering driving section 85. Therefore, it is not necessary to provide a lifting drive 各自 separately, and the driving system can be simplified. Since the ring-shaped cleaning nozzle 90 is provided on the blade ring 82, the developing liquid adhering to the blade ring 82 can be washed off. Professional results, can prevent from ^ ring 8 2 as small as 20
粒的發生。 Λ 由於環形洗淨喷嘴90之吐出口朝向上方，由於在晶片 W之旋轉中吐出洗淨液，能洗淨刀刀環82。此外，環形洗 淨噴嘴90之吐出口直接朝向刀叫82之額部仏也^' 在支樓構件80之材質，由於使用比晶片w硬者，能防 19 200409182 止因磨耗而產生的微粒發生。然而於本發明，在支揮構件 80之材質也能使时彈性者，譬如條狀氟系橡膠材。如此 情形’由於藉支樓構件80能吸收晶片w之振動，能更確實 的防止晶片W之偏離。此外，支撐構件8〇全體不是以上述 5硬質樹脂、陶曼、橡膠材等材質形成也可，至少支揮構件 80之上端部8Ge只要以這樣的材質形成也佳。又，支樓構件 8〇之形狀並不限定於如上述之圓弧狀，其他形狀，譬如是 環狀也可。 支樓構件80係如第13圖所示，在支撐構件80之垂直· 1〇斷’具有用以排出積存在水平板8〇b上液體之統孔η也 佳。譬如歧孔Η係形成在水平方向可通過水平板_表 面女此清形，由於可排出積存於水平板80b上之洗淨液 等’譬何抑制起因於殘留洗淨液而發生的微粒等。 苐囷所示支撐構件80也可配置成從平面看由圓 周方向侦斜定角度θ，譬如1〇度〜4〇度(理想的是川度）。 如此h形，由於譬如隨著晶片w旋轉沿著發生氣流的方向 配置支撐構件80，而支揮構件8〇並無妨礙該氣流之情事。^ Z此’可防止於晶片w旋轉時等在支撐構件_邊形成礼 2 月匕在安疋的玉衣境氣體内處理晶片W。 卜^感洗淨噴嘴9〇之刀刀環82之洗淨係在晶片w掙脫 ^時不實施，譬如由洗淨喷嘴110或裏面洗淨噴嘴93之晶 洗甲日守貝施也可。又，該刀刃環Μ之洗淨，在每次顯 像處理-張晶片…時並不實施，而每一定張數，每批實行 20 200409182 以上，雖就本發明實施形態之一例說明，但本發明並 不限定於該例，能採用各種形態。譬如本發明能使用之液 處理裝置並不限定於顯像處理裝置，抗蝕塗布裝置也能適 用。又，在本實施形態中，雖本發明適用於晶片之顯像處 5 理裝置’但本發明也能適用於譬如液晶顯示器（LCD)基板， 光罩用玻璃基板等晶片以外的基板之顯像處理裝置。 根據本發明，由於以線接觸支撐基板，相對來自接觸 部基板之熱授受較少，在基板面内能均一地保持供給基板 上之處理液溫度。因此，在基板面内可均等的實施基板之 1〇 ’夜處理，以提高基板之合格率。又，由於抑制支撐基板時 之基板偏離，順利可實行基板之液處理，可謀求提高生產 量。 產業上之可利用性 本發明在對晶片、液晶顯示器（LCD)基板，光罩用玻璃 15基板，或扁平封裝二極管(FpD)用各種基板的表面供給處理 液，進行該等基板處理時是具有實用性的。 【_式簡單說明】 μ 1圖顯示搭載本貫施形態這樣的顯像處理裝置之塗 布”、、員像處理系統之構成之概略平面圖。 20 弟2圖係第1圖之塗布顯像處理系統之正面圖。 第3圖係第1圖之塗布顯像處理系統之背面圖。 第4圖係本實郷態之顯像處理裝置之縱截面說明圖。 以圖係本實施形態之顯像處理裝置之橫截面說明圖。 第6圖顯示顯像處理裝置内之支撐構件及刀刃環之構 21 200409182 成之立體圖。 第7圖係刀刃環之縱截面之說明圖。 第8圖係刀刃環之縱截面之說明圖。 第9圖係顯像液供給噴嘴之立體圖。 5 第10圖顯示在晶片搬入時，支撐構件支撐晶片之情形 之顯像處理裝置之縱截面說明圖。 第11圖顯示顯像液之盛液時及靜止顯像時，顯像處理 裝置之縱截面說明圖。 第12圖顯示晶片洗淨時，顯像處理裝置之縱截面說明 10 圖。 第13圖係具有洩液孔之支撐構件之立體圖。 第14圖係相對圓周方向傾斜設置支撐構件時之旋轉卡 盤及刀刃環之平面圖。 【圖式之主要元件代表符號表】 1···塗布顯像處理系統 30、40、43…冷卻裝置 2···匡站 31…黏合裝置 3···處理站 32、42…擴充裝置 4…界面部 33、34…預烘焙裝置 5···匣載置台 35、46…後烘焙裝置 7···晶片搬送體 41…擴充冷卻裝置 8…搬送路 44、45…後曝光烘焙裝置 13…主搬送裝置 50…晶片搬送體 17、19…抗蝕塗布裝置 51…周邊曝光裝置 18、20…顯像處理裝置 60…旋轉卡盤 22 200409182 60a···旋轉卡盤上面 61···吸引口 62…驅動機構 70…杯 71…側壁部 72…下壁部 73…環狀突部 73a…頂上部 74…凹部 74a…排液口 75…排液管 76…排氣管 80…支撐構件 80a…垂直板 80b…水平板 80c…上端部 81…螺釘 82···刀刃環 82a…頂點部 82b…傾斜面 82c…上端部 82d…凹陷部 83…卡止部 84…支撐棒 85…升降驅動部 90…環形洗淨喷嘴 91…貫通孔 92…洗淨液供給管 93…裏面洗淨喷嘴 100…顯像液供給喷嘴 101…吐出口 102…臂 103…執道 104···臂驅動部 110…洗淨喷嘴 111···沖洗臂 112···驅動部 C…匣 G1…第1處理裝置群 G2…第2處理裝置群 G3…第3處理裝置群 G4…第4處理裝置群 G5…第5處理裝置群 Η…沒液孔 W…晶片 23Grain happens. Λ Since the discharge port of the annular cleaning nozzle 90 faces upward, the cleaning liquid is discharged during the rotation of the wafer W, and the knife ring 82 can be cleaned. In addition, the outlet of the annular cleaning nozzle 90 directly faces the frontal part of the blade called 82. Also, in the material of the branch member 80, since it is harder than the wafer w, it can prevent 19 200409182 from generating particles due to wear. . However, in the present invention, the material of the support member 80 can also be elastic, such as a strip-shaped fluorine-based rubber material. In this case, since the vibration of the wafer w can be absorbed by the branch member 80, the deviation of the wafer W can be prevented more reliably. In addition, the entire supporting member 80 may not be formed of the above-mentioned materials such as 5 hard resin, Taoman, and rubber. At least the upper end portion 8Ge of the supporting member 80 may be formed of such a material. The shape of the branch member 80 is not limited to the arc shape described above, and other shapes such as a ring shape may be used. As shown in FIG. 13, the supporting member 80 is preferably provided with a uniform hole η for discharging the liquid accumulated in the horizontal plate 80b in the vertical 10-segment 'of the supporting member 80. For example, the pores formed in the horizontal direction can be cleaned by the horizontal plate_surface, and the cleaning liquid stored on the horizontal plate 80b can be discharged. For example, the particles caused by the residual cleaning liquid can be suppressed. The support member 80 shown in (2) may also be arranged to determine an angle θ from the circumferential direction when viewed from a plane, for example, 10 degrees to 40 degrees (ideally, degrees). In this h-shape, for example, the support member 80 is arranged along the direction in which the air flow occurs as the wafer w rotates, and the support member 80 does not hinder the air flow. ^ Zthis ’prevents the wafer W from being formed on the supporting member while the wafer w is rotating. The femoral dagger handles the wafer W in the Yuyi atmosphere of An'an. The cleaning of the blade ring 82 of the sensation cleaning nozzle 90 is not performed when the wafer w is freed. For example, the crystals of the cleaning nozzle 110 or the cleaning nozzle 93 may be cleaned. In addition, the cleaning of the blade ring M is not carried out during each development process-one wafer ... Each fixed number of sheets is executed at 20 200409182 or more. Although an example of the embodiment of the present invention is described, the present invention The invention is not limited to this example, and various forms can be adopted. For example, the liquid processing apparatus usable in the present invention is not limited to a developing processing apparatus, and a resist coating apparatus can also be applied. In addition, in this embodiment, although the present invention is applied to a wafer processing apparatus, the present invention can also be applied to development of a substrate other than a wafer such as a liquid crystal display (LCD) substrate, a glass substrate for a photomask, and the like. Processing device. According to the present invention, since the substrate is supported by line contact, the heat transfer from the contact portion substrate is less, and the temperature of the processing liquid supplied to the substrate can be uniformly maintained within the substrate surface. Therefore, the 10 'night treatment of the substrate can be uniformly performed on the substrate surface to improve the yield of the substrate. In addition, since the substrate deviation when supporting the substrate is suppressed, the liquid processing of the substrate can be smoothly performed, and the throughput can be improved. INDUSTRIAL APPLICABILITY The present invention provides a processing liquid to the surface of various substrates such as wafers, liquid crystal display (LCD) substrates, glass 15 substrates for photomasks, or flat packaged diodes (FpD). The substrates are processed when such substrates are processed. Practical. [_Style brief explanation] μ 1 figure shows the coating of the image processing device equipped with the present embodiment, and the schematic plan view of the structure of the image processing system. 20 Figure 2 is the first coating coating processing system Front view. Fig. 3 is a back view of the coating development processing system of Fig. 1. Fig. 4 is a longitudinal sectional view of the actual development processing device. Fig. Is a development processing of this embodiment. An illustration of the cross section of the device. Fig. 6 shows a perspective view of the supporting member and the blade ring structure in the development processing device 21 200409182. Fig. 7 is an illustration of the longitudinal section of the blade ring. A longitudinal sectional view. Fig. 9 is a perspective view of a developer supply nozzle. 5 Fig. 10 is a longitudinal sectional view of a development processing apparatus in which a supporting member supports a wafer when the wafer is carried in. Fig. 11 shows a development section. Figure 12 illustrates the longitudinal section of the development processing device when the image liquid is filled and is still developing. Figure 12 shows the longitudinal section description of the development processing device when the wafer is cleaned. Figure 13 shows the drain hole. Three-dimensional Fig. 14 is a plan view of a rotating chuck and a blade ring when a supporting member is inclined at a circumferential direction. [Key components of the figure represent a symbol table] 1 ··· coating development processing system 30, 40, 43 ... cooling Device 2 ... Kuang station 31 ... Adhesive device 3 ... Processing stations 32, 42 ... Expansion device 4 ... Interface sections 33, 34 ... Pre-baking device 5 ... Box holders 35, 46 ... Post-baking device 7 ... ·· Wafer conveying body 41 ... Expansion cooling device 8 ... Transport paths 44, 45 ... Post exposure baking device 13 ... Main conveying device 50 ... Wafer conveying body 17, 19 ... Anti-corrosion coating device 51 ... Peripheral exposure device 18, 20 ... Display Image processing device 60 ... spin chuck 22 200409182 60a ... upper surface of spin chuck 61 ... suction port 62 ... drive mechanism 70 ... cup 71 ... side wall portion 72 ... lower wall portion 73 ... annular projection 73a ... top upper portion 74 ... Recess 74a ... Drain port 75 ... Drain pipe 76 ... Exhaust pipe 80 ... Support member 80a ... Vertical plate 80b ... Horizontal plate 80c ... Upper end portion 81 ... Screw 82 ... Blade ring 82a ... Apex portion 82b ... Inclined Surface 82c ... upper end portion 82d ... recessed portion 83 ... locking portion 84 ... Support rod 85 ... Elevation driving unit 90 ... Ringing cleaning nozzle 91 ... Through hole 92 ... Washing liquid supply pipe 93 ... Inside cleaning nozzle 100 ... Developing liquid supply nozzle 101 ... Ejection port 102 ... Arms 103 ... Steering path 104. ··· Arm drive unit 110 ... Wash nozzle 111 ··· Washing arm 112 ·· Drive unit C ... Cassette G1 ... First processing device group G2 ... Second processing device group G3 ... Third processing device group G4 ... Fourth Processing device group G5 ... Fifth processing device group Η ... no liquid hole W ... wafer 23