TW200407938A - Method of growing isomeric carbon emitters onto triode structure of field emission display - Google Patents

Abstract

The present invention is related to a kind of manufacturing process for triode structure of field emission display, and thick film technique is used to conduct the manufacturing. The triode structure contains a bottom electrode layer containing metal catalyst. Because of the metal catalyst, isomeric carbon field emission electron source can be grown at low temperature on top of the bottom electrode layer through the use of CVD process. Metal catalyst layer is formed on top of bottom electrode layer, and is not mixed with the conducting slurry. Metal catalyst layer is used to assist in growth of nanometer carbon tubes during the following CVD process. The combination of thick film technique with low-temperature CVD process provides a low-cost manufacturing technique for manufacturing the large-area field emission display having isomeric carbon field emission electron source. The invention relates to a device and method for treating substrates, which renders a good and uniform treatment during high throughput possible. According to the invention, the device is configured for simultaneously treating individual substrates. This device comprises a multitude of essentially identical process units, which are arranged one above the other and which each have a substrate holder for accommodating an individual substrate, and comprises a handling device with a number of substrate holders that corresponds to the number of process units in order to simultaneously load and unload a multitude of substrates into or from process units. In addition, the aim of the invention is to provide a device for conveying substrates that makes it possible to simultaneously load a multitude of process units. To this end, the invention provides a device that comprises a large number of parallelly arranged substrate holders that corresponds to the number of substrates to be conveyed and comprises a device for altering the distance between the substrate holders. The distance can be altered, in essence, between a first distance, which corresponds to the distance of the substrates in a first unit, and a second distance, which corresponds to the distance between second units.

Description

200407938 V. Description of the invention (1) Field of the invention The present invention relates to a field emission display (f i e 1 d e m i s s i o η display, FED). In particular, it relates to a method for growing carbon isomer field emitters on a triode structure field emission display. BACKGROUND OF THE INVENTION Field emission displays have been extensively developed in recent years to make large size flat displays (f 1 a t p a n e 1 d p s p 1 a y). The field emission display uses a cold cathode emitter tip as a source of electrons' to replace the heat in a conventional cathode ray tube (CRT). Hot cathode electron gun. When the field emission display is placed in an electric field, the tip of the cold cathode emitter is aimed at the field test, and the anode substrate (an〇deSubstrate) coated with fluorescent powder is emitted and the electron beam is emitted to hit the fluorescent powder (ph〇 sph0r). FIG. 1 is a schematic diagram of the structure of a traditional carbon nano-tube CNT% emission display. The electrons of the cold cathode emitter tip 3 on the cathode glass substrate 101 are extracted by an electric field, and the field emission electrons leaving the cathode plate in a vacuum environment are attracted by the acceleration of the positive voltage on the anode glass substrate i 04, and hit the anode. 105 phosphor 106 emits light. The carbon nanotube cold cathode emitter tip 103 is formed in the gap of the dielectric layer 107.

200407938 V. Description of the invention (2) The dielectric layer 107 is a cold cathode layer 102 formed on a glass substrate 101. An opening is formed at the junction of the cold cathode layer 102 and the gate layer 108 (〇 p en n g s) as a collection of electrons (emer g e t h r o u g h). 2A to 2D illustrate a method of manufacturing a cathode plate of a nano carbon tube field emission display. As shown in FIG. 2A, a conductive paste is first coated and patterned on a transparent substrate 201 to form a cathode electrode layer 2 0 2 and then a transparent substrate 2 0 1 An overall layer of an etchable dielectric material 230 is coated on the bottom electrode layer 202, as shown in FIG. 2B. Then, a layer of conductive gate material 204 is coated on the dielectric layer 203, and a gate pattern is defined by a patterned photoresist layer 205, as shown in FIG. The gate and dielectric materials were removed by sand blasting and fired in air. Finally, the nano carbon tube layer 2 06 is coated on the bottom electrode layer 202 by a scre printing process, as shown in FIG. 2D. The field emission display 2 shown in FIG. 2 is produced by screen printing technology, and the pre-adjusted paste is scraped across the patterned screen using a doctor blade, so that the pattern is printed on the glass substrate, so as to layer by layer Stack the patterns. Because this method is limited by the mesh and knot size of the screen, the analysis of the printed pattern cannot be improved. As a result, a higher field emission starting voltage must be provided in order to achieve the required brightness of the display. In addition, it will be affected by uneven screen tension, resulting in poor film thickness uniformity and distortion of printed patterns, resulting in uneven electric field intensity distribution and

Page 6 200407938 V. Description of the invention (3) Disadvantages of difficult alignment in subsequent processes. In order to overcome the shortcomings of traditional nano carbon tube field emission displays 1. " 'There are other recipes for making cathode plates using thick film screen printing technology :: two, one, two, one, one, one, h, conductive materials, and dielectric materials that can be engraved; junction: soil first, photo lithography, and Etching. The cathode plate of a steam field emission display. Clothes Carbon Figures 3A to 3E illustrate a method for fabricating a cathode plate of a nanometer display using a thick film screen printing technique. As shown in FIG. 3A, a thin conductive conductive paste is applied on the transparent substrate 301, and the upper surface of the substrate 301 and the bottom electrode layer 302 are coated and patterned in a pattern, i. A 302 ′ is then permeable to the dielectric material 303, as shown in FIG. 3B. A layer of etchable coating is applied over the dielectric layer 3 0, and a gate electrode layer 3 0 4 (Wnter) made of cold electricity is used as the gate electrode material 3 0 4 made of yellow flower. , Such as patterning and sintering are used as protective films (not for protecting fn C. The gate pattern is part of the dielectric material covered by the electrode pattern, such as m2, engraved-without the gate layer 3 0 2 Fill the top of the nano carbon tube with "No." Finally, at the bottom of the electrical structure, as shown in Figure 3E. Shoot the layer to form the cathode junction as shown in Figure 3D, a layer of photosensitive nano carbon tube slurry Second, the clothing can be made of yellow light and define the carbon nanotubes in the form of a counter-exposure method. On the surface of the cathode plate, 'sinter in a nitrogen atmosphere.' Making

200407938 V. Description of the invention (4) The method of electrical deposition includes the steps of comprehensively coating a positive or negative photoresistor on the bottom electrode layer 3 02 and the gate electrode layer 3 0 4 (positive or negative photoresist), as shown in FIG. 3D, and a photomask is used to define the photoresist pattern in a counter-exposure manner. After forming a photoresist pattern on the gate electrode layer 3 0 4, the nano carbon tube slurry was coated on the bottom electrode layer 3 2 by electrophoresis (e 1 ectri ca 1 1 y depositing), and under nitrogen Under a nitrogen atmosphere, it is sintered in a furnace to form a nano-carbon tube emission layer 3 05. As described above, the manufacturing process of the carbon nanotube emission layer on the triode structure of the carbon nanotube field emission display requires strict alignment between the gate opening and the carbon nanotube pattern, making its process cost and process The difficulty is high. Therefore, there are still many technical obstacles in the field of carbon nanotube field emission display to be overcome. Compared with other technologies, the chemical vapor deposition (chemicai vapor) deposition (CVD) process using catalytic metals has more advantages and has been proven to be used for the production of large-area carbon nanotubes. 'Its process cost is lower. However, the reaction temperature of temperature-controlled CVD is usually as high as 700-100 ° C, which is much higher than the melting point of 600 ° C of the glass substrate of a general flat panel display. At present, there are literatures and patents that point out the feasibility of emitting electron sources in a low-temperature growth field. A nickel catalyst was coated on a soda-lime glass substrate using C2Η2 gas CVD at 50 ° C. Meter carbon tube. Therefore, the development of a set of integrated thick film of energy-producing nano carbon tube field emission display

200407938 V. Description of the invention (5) A three-pole structure process with low-temperature CVD technology is extremely needed. SUMMARY OF THE INVENTION The present invention overcomes the shortcomings of the conventional field emission display process described above. The main purpose of the method is to provide a method for producing a carbon isomer field emission electron source on a tripolar field emission display with low process cost. ^ Main principle: After producing a triode structure field emission display using thick film technology, a carbon isomer field emission electron source is grown on the tripolar structure field emission display by a CVD process. Another object of the present invention is to provide a cathode electrode layer with a tripolar structure, so that the carbon isomer field emission electron source can grow on this tripolar structure by the CVD process. According to the present invention, a metal catalyst is first mixed with a conductive metal powder to form a negative electrode X pole layer, and then the conductive metal powder is prepared into a conductive metal paste, and the conductive metal paste is formed into a cathode through a thick film process The electrode layer is on a transparent substrate. A dielectric layer and a gate electrode layer are then deposited on the cathode electrode layer, and a tripolar structure is formed after patterning. Because the cathode electrode layer contains a metal catalyst, the carbon isomer field emission electron source can easily grow on the tripolar structure. Another object of the present invention is to provide a metal catalyst layer in a tripolar structure so that the carbon isomer field emission electron source of the field emission display is easy to grow. It forms a metal catalyst layer on the bottom electrode layer to replace the gold

Page 9 200407938 Five 'invention description (6) It is a method for forming a bottom electrode layer on a transparent substrate after the catalyst is mixed with the conductive metal paste. Then, a dielectric layer and a gate electrode layer are formed over the metal catalyst layer, the cathode electrode layer, and the transparent substrate. After patterning the dielectric layer and the gate electrode layer, the tripolar structure is completed. Finally, a CVD process was used to grow a carbon isomer field emission electron source on the metal catalyst layer. According to the present invention, the formation of the tripolar structure can be made by screen printing technology, dry etching-sandblasting method, and thick film yellow light process. The patterning of the cathode electrode layer or the metal catalyst layer can be made by screen printing technology or thick film yellow light process. Materials that can be used for the metal catalyst include transition metals such as iron (Fe), cobalt (Co), and nickel (N i). Carbon isomers field emission electron source can use materials including carbon nanotubes, carbon fibers (carb ο nfiber) or graphite nano-fiber (0) with the following drawings, detailed description of the examples and patents The scope of the application details the above and other objects and advantages of the present invention. Detailed Description of the Invention FIG. 4 illustrates in detail the process steps of the nano-carbon tube field emission display using the thick film process and the CVD technology in the first embodiment of the present invention. First, as shown in Fig. 4A, a transparent substrate 401 is prepared. FIG. 4B illustrates forming a cathode electrode layer 402 on the transparent substrate 401.

Page 10 200407938 V. Description of the invention (7) First, a layer of conductive paste is deposited on the transparent substrate 401. After the conductive paste is patterned in a yellow light process, the negative electrode layer 4 02 is formed after annealing and sintering. The yellow light process includes a mask definition pattern after pre-baking, and steps for exposure and development. FIG. 4β illustrates a cross-sectional structure of the cathode electrode layer 402 pattern after development. The cathode electrode layer 4 2 can also be patterned using screen printing technology. In the first embodiment of the present invention, the cathode electrode layer 402 includes a catalyst conductive material to assist the growth in the post-CVD process. The metal catalyst is first mixed with a conductive metal powder to form a conductive material such as iron, nickel or metal. The dielectric layer is then layered over the layer 40 2. It is not intended that a cross-sectional structure of the gate structure is fabricated on the dielectric layer 403 by a sand blasting method or a yellow light process. Slurry. The material of the metal catalyst can be redeposited 閜 & Peach 1 electrode layer 404, a polar structure. 4 _ 4C illustrates this gate junction. The cathode electrode layer 40 2 includes a plurality of parallel electrical layers 4 0 3 and a plurality of dielectric materials and is a long flat electrode. The gate electrode layer 404 includes a plurality of long-line electrodes that are parallel to each other. Each of the long-line electrodes of the layer is located on the dielectric W-strip electrode. Gate electrode The long-line electrodes in the electrode layer intersect vertically. The long lines above the electrode% electrode and the cathode electrode and the bottom electrode layer have been supported by two long lines of the > layer and the dielectric layer. The circular electrodes / circular openings / cirrni mean circular openings. cavities, 405 are filled at the low temperature by CVD technology at low temperature). Nano carbon tube layer, 'this W hole opening.

200407938 V. Description of the invention (8) FIG. 5 illustrates a manufacturing process of a nano carbon tube field emission display according to a second embodiment of the present invention. Referring to Fig. 5A, as in the first embodiment, a transparent substrate 501 is first prepared. Fig. 5B illustrates the formation of a cathode electrode layer 502 over the transparent substrate 501. After that, a metal catalyst layer 506 is formed on the cathode electrode layer 502 to assist the growth of the carbon nanotubes in the post-CVD process. In the second embodiment, a layer of conductive paste is first deposited on the transparent substrate 501. The conductive paste was patterned in a yellow light process, and then annealed and sintered to form a negative electrode layer 502. Fig. 5B illustrates a schematic cross-sectional structure of the pattern of the cathode electrode layer 502 after development. The metal catalyst layer 506 is formed on the cathode layer instead of mixing the metal catalyst with the conductive paste. As shown in Fig. 5c, the metal catalyst Zan 506 is used to assist the growth of the carbon nanotubes in the post-CVD process. The material of the metal catalyst can be a transition metal, such as iron, iron, and nickel. The subsequent processes of the second embodiment are exactly the same as those of the first embodiment. A dielectric layer 503 is entirely deposited on the substrate 501, the bottom electrode layer 502, and the metal catalyst layer 506. A gate electrode layer 504 is further deposited on the dielectric layer 503. Then the gate structure is made by sandblasting or yellow light process. Fig. 51) A cross-sectional structure diagram illustrating the gate structure. As the dielectric material of the second embodiment, the same dielectric material as that of the first embodiment can be used. Nano-carbon tube layer 505 uses CV]) technology to grow on metal catalyst layer 506. Figure 6 illustrates the field emission of carbon isomers made according to the process of the present invention

Page 12 200407938 V. Description of Invention (9) ---- SEM image of electron source. The gate structure is made by sandblasting, and the carbon isomer field emission electron source layer is deposited by CVD technology. Figures 6A and 6B illustrate the SEM cross-section diagrams of the gated hole (Sated-electrode hole) after the nano-carbon tube has grown on the cathode at 500x and 5000x magnifications, respectively. According to the present invention, the carbon nanotube layer 405 or 505 is fabricated on the bottom electrode layer 4 0.2 or the metal catalyst layer 506 by a CVD technique. The bottom electrode layer 402 containing a metal catalyst or a metal catalyst layer 506 is produced by using a thick film technology, such as a screen printing technology or a thick film yellow light process. The formation of the tripolar structure further includes a sandblasting method. The carbon isomer field emission electron source of the present invention may be a nano carbon tube, carbon fiber or graphite nano fiber. In summary, the present invention uses a thick film technology to make a three-pole structure on a metal-containing catalyst or a bottom layer of a metal catalyst layer. Then, a carbon isomer field emission electron source layer is directly formed on the bottom electrode layer or the metal catalyst layer by a CVD process. The thick film technology combined with the CVD process provides a low process cost technology to fabricate a large area field emission display. However, the above-mentioned ones are merely preferred embodiments of the present invention, and the scope of implementation of the present invention cannot be limited by this. That is to say, all equal changes and modifications made in accordance with the scope of the patent application of the present invention shall still fall within the scope of the patent of the present invention.

Page 13 200407938 Brief description of the drawings Fig. 1 is a schematic diagram showing the structure of a conventional triode structured carbon nanotube field emission display. 2A to 2D illustrate a method for fabricating a cathode plate of a nano carbon tube field emission display. Using thick film screen printing technology to produce nano tube breaking field emission display Figure 4 details the first embodiment of the present invention Feng Ding ^ Ding, Mu Shigangan% emission display state, using a thick film process with CVD technology + V 〇 FIG. 5 illustrates the fabrication process of the nanometer nitrate production price of the second embodiment of the present invention. Figure 6A and Figure 6B are respectively 500 and 5000 times the magnification of Yu 丄 ^, and Ming Weitai + π_ 立 ®r ^ it7 of the gate hole after the carbon tube grows on the cathode J face is not thinking. Fig. 7 illustrates an 11V curve of a field emission electron source of a gadolinium isomer according to the present invention using a CVD growth weight. Drawing number description 101 cathode glass substrate 1 〇2 cold cathode layer

1 m ΪΙ

Page 14 200407938 Brief description of the drawings 1 0 3 Nano carbon tube cold cathode emitter tip 1 0 4 anode glass substrate 1 0 5 anode 1 07 dielectric layer 2 0 1 transparent substrate 2 0 3 dielectric material, dielectric layer 2 0 5 photoresist layer 3 0 1 transparent substrate 3 0 3 dielectric material, dielectric layer 3 0 5 nanometer carbon tube emitting layer 4 0 1 transparent substrate 4 0 3 dielectric layer 4 0 5 nanometer carbon tube layer 5 0 1 transparent substrate 5 0 3 dielectric layer 505 nanometer carbon tube layer 1 0 6 fluorescent powder 1 0 8 gate layer 2 0 2 cathode electrode layer 2 0 4 gate electrode material 2 0 6 nanometer carbon tube layer 3 0 2 Electrode layer 3 0 4 gate electrode material, gate electrode layer 40 2 cathode electrode layer 4 0 4 gate electrode layer 5 0 2 cathode electrode layer 5 0 4 gate electrode layer 5 0 6 metal catalyst layer

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Claims (1)

200407938 VI. Scope of patent application 1. A method for manufacturing a triode structure of a field emission display includes the following steps in sequence: (a) preparing a transparent substrate; (b) coating a layer of conductive paste on the transparent substrate and Patterning the conductive paste layer to form a bottom electrode layer, the conductive paste containing a metal catalyst; (c) forming a gate over the bottom electrode layer and the transparent substrate using a sand blasting method or a thick film yellow light process; Electrode structure; (d) making a carbon isomer field emission electron source above the bottom electrode layer. 02. A method for fabricating a three-pole structure of a field emission display as described in item 1 of the patent application scope, wherein The metal catalyst contained in the conductive paste layer in step (b) is a transition metal. 3. The manufacturing method of the triode structure of the field emission display as described in the first item of the patent application scope, wherein the metal catalyst contained in the conductive paste layer in the step (b) is made of iron, cobalt or Made of nickel. 4 · The manufacturing method of the triode structure of the field emission display as described in item 1 of the scope of patent application, in this step (b), the patterning of the bottom electrode layer is completed by screen printing technology or thick film yellow light process . 5. The manufacturing method of the triode structure of the field emission display according to item 1 of the scope of patent application, the manufacturing method includes screen printing technology, sandblasting method and thick film Page 16 200407938 6. Scope of patent application Huang Guang process. 6. The manufacturing method of the triode structure of the field emission display according to item 1 of the patent application scope, wherein the carbon isomer field emission electron source is from a nano carbon tube, carbon fiber or graphite nano fiber. 7. —Method for manufacturing a tripolar structure of a field emission display, which includes the following steps in sequence: (a) preparing a transparent substrate; (b) coating a conductive paste on the transparent substrate and patterning the conductive paste Layer to form a bottom electrode layer; (c) forming a metal catalyst layer above the bottom electrode layer; (d) using the sand blasting method or a thick film yellow light process on the bottom electrode layer and the transparent substrate Forming a gate structure; (e) fabricating a carbon isomer field emission electron source over the bottom electrode layer8. A method for fabricating a three-pole structure of a field emission display as described in item 7 of the patent application scope, wherein In the step (c), the metal catalyst is a transition metal. 9. The manufacturing method of the triode structure of the field emission display according to item 7 in the scope of the patent application, wherein in step (c), the metal catalyst is made of iron, iron or nickel. Page 17 200407938 VI. Application scope of patent 10. The method for manufacturing the triode structure of the field emission display as described in item 7 of the scope of application for patent, in this step (b), the patterning of the bottom electrode layer is based on a net Printing technology or thick film yellow light process. 1 1. The manufacturing method of the triode structure of the field emission display according to item 7 of the scope of patent application, the manufacturing method includes screen printing technology, sandblasting method and thick film yellow light process. 12. The method for manufacturing a triode structure of a field emission display as described in item 7 of the scope of the patent application, wherein the carbon isomer field emission electron source is derived from a carbon nanotube, carbon fiber or graphite nanofiber. Page 18