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TW200407877A - Multi-stack optical data storage medium and use of such medium - Google Patents

Multi-stack optical data storage medium and use of such medium Download PDF

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Publication number
TW200407877A
TW200407877A TW091132392A TW91132392A TW200407877A TW 200407877 A TW200407877 A TW 200407877A TW 091132392 A TW091132392 A TW 091132392A TW 91132392 A TW91132392 A TW 91132392A TW 200407877 A TW200407877 A TW 200407877A
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TW
Taiwan
Prior art keywords
layer
recording
stack
data storage
storage medium
Prior art date
Application number
TW091132392A
Other languages
English (en)
Inventor
Johannes Cornelis Norbertus Rijpers
Guo-Fu Zhou
Original Assignee
Koninkl Philips Electronics Nv
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Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Publication of TW200407877A publication Critical patent/TW200407877A/zh

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  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

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200407877 ⑴ 玖、發明說明 (發明說明應敎明：發明所屬之技術領域、 技術領域 賴万式及圖式間早說明） 本發明係關於一種利用聚隹兩 吝遠聶#風：-… I、、、田射先束達仃可覆寫記錄的 且予貝料儲存媒體，該一 一面沈積#: J基板’该基板的 己錄堆疊’包含一相變類型記錄層，該第一記 遣離聚焦雷射光束最遠， _至少-其他記錄堆疊’包含一相變類型記錄層， _ :透明間隔層’介於記錄堆疊之間’該透明間隔層的厚 度大於聚焦雷射光束的焦點深度。 本發明亦與此種多堆疊光學 ^ ^ %干貝枓儲存媒體在高資料速率 記錄應用之使用有關。 先前技術 第一段提到的光學資料错存媒體類型，其具體實施例見 於申請人所提出之美國專利第us 6，⑽，75〇號。 根據相變原理的光學資料儲存媒體很有吸引力’因^ 合了直接覆寫（DOW)和高儲存速率的可能性，且盘唯^ 學資料儲存系統極易相容。此處的資料儲存包括數位視訊 、數位音说和軟體資料儲存。相變央風 相欠九學自己錄包括使用一相 當高功率的聚焦雷射光束’在-結晶態的記錄層中形成次 微米大小的非晶形記錄標記。記錄資訊時，聚焦雷射光束 會根據欲記錄的資訊被調變’媒體則會相對於該光束而移 動。高功率雷射光束炫化結晶態記錄層時會形成標記。雷 射光束被關閉及/或補後相對於記錄層移動時，熔化的標記 200407877 會在記錄層中發生淬熄，而在記錄層中的曝光區域留下一 非晶形的資訊標記’未曝光區域中的記錄層則仍保持結晶 態。吾人使用功率位準較低的相同電射將它加熱，使其再 結晶，但不熔化記錄層’而實現已寫入之非晶形標記的抹 除。非晶形標記代表資料位元’彳由一相當低功率的聚焦 雷射光束經由基板讀出。非晶形標記相對於結晶態記錄層 的反射差異性產生-調變雷射μ，此光束隨後由叫貞測 器根據所記錄的資訊，轉換成一調變光電流。 相變光學記錄最重要的要求之一為高資料速率，這表示 貝料能夠以至少30 Mblts/s的使用者速率被寫入或覆寫至 媒體中。如此高的資料速率將使記錄層在D〇w期間的結晶 速率必須很同，亦即結晶時間短。為確保先前記錄的非晶 形糕纪在DOW期間能重新結晶，記錄層的結晶速率必須適 當，以匹配媒體相對於雷射光束的速度。若結晶速率一不舜- 快，先前記錄留下的非晶形標記（代表舊資料）在DOW期間 將無法完全抹除，意即再結晶。這樣會造成高雜訊位準。 在南密度記錄及高資料速率光學記錄媒體中，例如碟狀 CD-RW 南速、DVD-RW、DVD+RW、dvd ram，j VD藍特別需要高結晶速率，其中CD、DVD、DVR 刀別為〇人所知的Compact辽isk、新一代高密度pjgitai
Bisk +RW和-RAM(其中RW和RAM是指此 光碟片的可覆寫性）及Digital Yideo ^cording光學儲存 光碟片（其中的紅、藍是指所使用的雷射波長）的縮寫。這些 光碟片的完全抹除時間（CET)必須低於3〇 ns。CET的定義是 200407877 (3) 發嚇月顧 使己寫入之非晶形標記在一結晶性環境中完全結晶化的 抹除脈衝的最短持續時間。CET是以一靜態測試器測量的 。DVD+ RW(記錄密度為每120 mm光碟片4.7GB)需要的使 用者資料速率為每秒26 Mbits/s，對於DVD-藍，該速率則 為35 Mbits/s。對於高速版本的DVD + RW和DVD-藍，則需 要50 Mbits/s及更高的資料速率。音訊/視訊應用的資 料速率係由AV-資訊串流決定，電腦資料的資料速率則沒 有限制’亦即愈大愈好。每一資料位元速率均可轉換成最 長CET，有幾個參數會影響該值，例如記錄堆疊的熱設計 及使用的記錄層材料。 另一項重要的要求是增加單面光片上的光學記錄媒體， 例如可覆寫DVD及DVR(數位錄放影機）的儲存容量。縮短 雷射波長λ及/或增加記錄透鏡的數值孔徑（NA)可達成此目 的，因為雷射光點尺寸正比於（λ/ΝΑ)2。由於雷射光點尺寸 較小，記錄上去的標記也較小。因此光碟片的儲存容量增 加’因為每單位面積光碟片上可容納更多標記。另一個選 擇是應用多重記錄堆疊’吾人可使用光學方法，以同一雷 射光束從光碟的同一側存取資料。多層堆疊包含兩個記錄 堆®時’此特色亦稱為雙重或雙堆疊記錄。 對於雙重或雙堆疊記錄，雷射光束會先穿過第二記錄堆 ^ 口此第一記錄堆疊的穿透性必須足夠，以確保第一纪 錄堆疊的讀/寫特性正確。美國專利第6，19〇,75〇號中，該°已 知媒體具有[PJM/lSIIPilMn的結構，用於進行可覆寫的 才灸°己錄’该結構有兩層金屬反射層M i和M2，分別為光學 200407877 (4) 發明說嘯頁 反射性高且相當厚，以及光學穿透性相當高且相當薄。㈠戈 表一介電層，r代表其他介電層。Pi*p2代表相變記錄層， 且s代表一透明間隔層。在此結構中，雷射光束會先穿透 過含P2的堆疊。金屬層不僅可以做為反射層，亦可做為散 熱層，以確保快速冷卻，俾於寫入時使非晶形相淬熄。6 層位於相當厚的金屬鏡層Μι附近，造成匕層在記錄期間大 幅冷部，P2層則在相當薄，且散熱性質有限的金屬層附 近。記錄層的冷卻行為在很大程度上決定非晶形標記在記 錄期間是否、正確地形成。吾人需要足夠的散熱動作，以確 保在記錄期間正確地形成非晶形標記。 在已知媒體中，金屬M2不可避免地會阻擋一大部分的雷 射光^成Pi層的€錄功率降低。吾人將其他介電層1 +與層 M2組合使用，以增加M2層的穿透率。為具備足夠的散熱動 作，故需要金屬層Μ”此一其他介電層的熱傳導係數似乎 太低，因此不足以快速降低記錄層的溫度。由於部份雷射 光被阻擋，故Pi記錄層需要一高得多的雷射光寫入功率。 足表示為了在光學資料儲存媒體内成功地寫入或覆寫資料 ，需要相當大的雷射光功率，特別是在高資料速率的情況 下，此時媒體相對於雷射光束的速率必須較大。在大部分 情況下，吾人使用半導體雷射產生雷射光束。特別是較短 的雷射光波長，例如比700 nm短的雷射，其最大雷射功率 有限，形成高記錄功率的障礙。再者，最好避免大雷射光 功率，因為鄰近第一記錄堆疊的其他記錄堆疊可能會被雷 射光束（聚焦於第一記錄堆疊的記錄層上）不當地加熱。不2 200407877 、） 麵說雜繽頁 ·， .：. ' 用金屬層Μ2時’ P2層的冷卻行為將與Ρι層的冷卻行為大不 相同。所謂寫入是指一脈衝或一寫入策略。若某一層的冷 卻行為相當慢，甚至可能無法在夠高的資料速率下成功地 寫入。換句話說：由於p層的冷卻速率慢，允許大幅度的再 結晶’非晶形標記的形成被大幅度地抵消。 發明内容 本發明的目標之一是提供第一段中描述的一種多堆疊光 學資料儲存媒體，其中記錄堆疊或其他記錄堆疊含有對雷 射光而言大致上為透明的層，該層具有足夠的散熱動作， 以確保該記錄堆疊的記錄層中形成非晶形標記。 若至少一記錄堆疊中具有至少一散熱層，其所含化合物 可由化學式HfNx表示，其中該化學式中的χ為每Hf原子的N 原子數，且1.1 < x 2 1.6，則可達成此目標。 本發明是根據以下的洞察·· IPIT.叠的穿透率幾乎完全 由Ρ層的穿透率決定。Τ代表散熱層，且〗和！>分別代表介電 層和相、憂圯錄層。其中並沒有不可避免會阻擋一部分雷射 光的金屬層。由於有散熱層，記錄堆疊内有足夠的散熱動 作。吾人發現，若使用HfNx(11 丨6)做為散熱裝置的 材料，可得到熱傳導係數高得驚人的透明層。χ值低於1;[ 時，材料的雷射光吸收率變得太高，造成HfNx層的穿透率 太低。χ值高於1.6時，該層的應力内涵變成高得無法接受 ，散熱層可能會發生碎裂，且基板可能會彎曲。本發明的 結果之一為寫入下方記錄堆疊的雷射光功率降低很多，例 如最多可減少大約5〇%的量。 200407877 ⑹ 申請人提出的非預先出版歐洲專利nr 〇丨2〇2〇89 7(phnl ㈣374)中描述的氧化銦錫（IT〇)為一透明散熱材料，相較於 諸如（ZnS)8Q(Si〇2)2〇製成的標準透明介電層，其熱傳導係數 相當高。吾人已發現根據本發明的HfNx化合物與ιτ〇相比， 其熱傳導係數有強大的改進。 在根據本發明之光學資料儲存媒體的具體實施例中，至 少一其他記錄堆疊内具有一散熱層，其位置在其他記 疊之記錄層最靠近第一記錄堆疊（與一透明間隔層相鄰')的 一側0 以下結構可概略地代表此具體實施例： lIPnlTnlSnllPylUSn-J·.····11P i 11。雷射光首先穿透第 n 堆疊 。ΠΜ堆疊為第一記錄堆疊，Sn為一透明間隔層， 第η記錄堆疊，其中I、Ρ、τ的意義如以上所述。此處應1指 出多重堆疊設計的記號可能有很多種。有時多重堆疊設叶 是以Ln表示，其中η代表〇或一正整數。雷射光穿透的第一 記錄堆疊叫做L〇，更深層的記錄堆疊則以[、 τ . 1 ......、表示 。吾人應瞭解更深層是就入射雷射光束的方向而論。本文 件中使用另一記號，其中最深層堆疊的下標值為工。 在另一具體實施例中，含有散熱層的其他記錄堆疊内具 有其他散熱層’其所含化合物可由HfNy代表，在此化學式 中，y為每一Hf原子的N原子數，且;其他 層的位置在其他記錄堆疊的記錄層與散熱層相對的一側： 應注意其他散熱層之化合物HfNx& X值可能與散熱層之化 合物HfNx中的X值不同。 以下結構可概略地代表此具體實施例：丨了 200407877
⑺ 丨 Tn-liPn-丨 ΐτη·丨ISn-丨丨......|ΙΡιΐ|。 吾人可使用此種方式形成-對稱堆疊，其記錄層的兩面 1有-散熱層。這樣有_優點，即冷卻行為的分佈更為對 其結果為非晶形標記在記錄層的寫人及抹除更為理想 :付合1.2 1.3的化合物HfNx特別適合。在此範圍時，
，熱層材料的吸收率很低（亦即折射率的虛部低於〇 2)，且 政熱層沈積之後的機械應力内涵很低。吾人已發現，當X 和y的值高於1·3時，根據本發明之散熱層的應力内涵傾向 於。當―的值大於16時，該層的應力内涵可能會變 成南得令人無法接受，散熱層可能會裂Μ，且基板可能合 糸钱 II, ^ j在一較理想#具體實施例中，冑_記錄堆疊内具有其他 :熱層’其位置在第一記錄堆疊的記錄層最靠近其他記錄堆 且的側且第一纪錄堆疊内具有散熱層，其位置在第一艽 錄堆疊的記錄層離其他記錄堆疊最遠的一側。P層本身的反 射率足夠4 ’可直接沈積第—記錄堆疊，而不需要通常使用 的金屬層。第-記錄堆疊的冷卻行為大致上與其他記錄堆疊 (散熱_層可能也存在，且結構相同）的冷卻行為相同。第一記 錄堆疊不需要應用不同的記錄策略。 在另一具體實施例中’P1層本身的反射率可能不足，第一記 錄堆疊上有一金屬反射層，位置在第一記錄堆疊的記錄層離其 他記錄堆疊最遠的—側，以增強光學資料健存媒體的全反射。 2第-記錄堆疊是雷射光最後到達的堆疊，故金屬反射層可 此是不透明的。第_記錄堆疊金屬反射層可使用八卜们、心 、州、〇1、々、灿、15卜15(1、州、〇〇、河11和&等金屬，以 200407877
(8) 及這些金屬的合金。適當的合金範例為AlTi、AlCr和AlTa 。Ag的熱傳導係數高，因此較理想。此金屬反射層的厚度 並不要緊，但穿透率最好為零，俾得最大反射。基於實務 的理由，厚度通常不超過大約100 nm。
敢熱層厚度的值最好從5到200 nm的範圍内選擇。太薄# 層無法表現出足夠的散熱動作，太厚的層則可能使記錄均 疊的光穿透率惡化，也可能造成碎裂，或使基板彎曲。再 者，沈積厚的層較為昂貴。 在一有利的具體實施例中，記錄層與至少一附加層接觸 ，該層所含之化合物是從Al2〇3、Slc、Sl3N4、Mg〇、Zne 和AIN(包括其非化學計量組成）構成之群組中選出，該附加 層的最大厚度為1〇 nm。這些層會增加非晶形標記在 期間的結晶速率，直接造成可能的較高資料速率。這些層 :、己紅層之間的介面’其作用為非晶形標記結晶的成核來 。附加層的厚度相當小。因此附加層對於記錄層中的熱
二^移到政熱層的能力只有相當小的影響程度。換句話說 ，附加層幾乎不會改變散熱動作。 記錄層最好包含&盥丁6元 變材料會呈現^士 S开， 彔層屬於相變類型。相 、TeS u H非晶形相變。更有料是In-Sb-Te ie-Se，Sb、Ag]n 化合物。申請人扭山 e — Sb-Te、Ge-In-Sb-Te或Ge-Te k出的兩份國降衷味丨由 W0 97/50084 ^ ⑵際專利巾 4W0 G1/13370 和 化合物，1片；^的化°物特別有用°购97/50()84中的 。〜下的化學式- ‘"中〇166SxS〇.444。這些成分位於 (9) 200407877
二角形的Ge-Sb-Te成份圖中連接化合物以^與Sb〗丁以的直 線上，且包括化學計量化合物Ge2Sb2Te5(x = 〇料4)、
GeSb2Te4(x = 〇 286)和= 〇 166)。這些化合物的 結晶（抹除）時間都很短。 W〇01/13370中的化合物，其原子百分比成分係由以下 化學式定出： 、
QaInbSbcTed(原子百分比），其中：
Q是從Ag和Ge組成的群組中選出， 2 < a < 8 0 < b < 6 55 < c < 80 15<d<30’ 且 a + b + c + d=l〇〇。 其他記錄堆疊的記錄層，其厚度最好介於3和251^瓜之間。 較厚的層會造成穿透率太低。第一記錄堆疊的記錄層可較 厚’例如介於3和5 0 nm之間。 在所有的記錄堆疊中，相變丨離基板之一側的介電層保護 記錄層不受一般而言為有機材料之間隔層影響，並使光學 對比值最佳化。慮及此一光學對比值，此層的厚度最好限 制為（70 + λ/2…nm，其中λ為電射光束的波長，且”為介電層 折射率。 在第一記錄堆疊中，記錄堆疊與較理想的金屬反射層之 間的介電層係介於10和50 nm之間，最好介於2〇和4〇 nm之 間。此層太薄時，記錄層與金屬反射層之間的熱絕緣會受 到不利的影響。因此’記錄層的冷卻速率增加，導致結晶 -14- 200407877 (ίο) 變騎__ 過私不良，且可能造成可覆寫次數很低。增加介電層的厚 度會降低冷卻速率。為增加一記錄堆疊之記錄層的靈敏度 ’相當厚的介電層較理想。 介電層I最好由ZnS*S：i(Vti合物，例如（ZnS)8〇(Sl〇2)2〇t 成。該層亦可由Si02、Ta2〇5、Ti〇2、ZnS(包括其非化學計 量組成）製成。 第一記錄堆疊與其他記錄堆疊之間的透明間隔層，其厚 度大於运射光束的焦點深度，例如1 〇 。此一厚度可確保 第一和第二記錄堆疊彼此間在光學上無耦合作用，亦即聚 焦於第一記錄堆疊之記錄層上的雷射光束不會從其他記錄 堆豐讀出資訊，或將資訊寫入其他記錄堆疊，反之亦然。 如此一來’儲存容量較單層資料儲存媒體增加。 間隔層的材料為例如紫外光硬化的丙烯酸黏著劑，光碟 壓第私序可能對雷射波長為透明，且係由諸如聚碳酸酯、 聚甲基丙烯酸甲酯（PMMA)、非晶形聚鏈烴或玻璃。只有在 雷射光束經由基皮的進入表面進入記錄堆疊時，基板才需 要為透明。在一典型範例中，基板為碟形，直徑為12〇爪111 ，厚度為0.6或1.2 mm。雷射光束經由與基板側相對的一側 進入堆疊時，記錄堆疊側之碟形基板的表面最好備有可用 光學方法掃描的伺服執道。 此伺服執道通常由螺旋形的凹槽構成，且係於射出成型 或壓製時利用鑄模形成。亦可於壓製過程中，在間隔層的 合成樹脂（例如紫外光硬化的丙烯酸）内形成這些凹槽。 堆疊的最外層可選擇性地利用一保護膜將其遮蔽，例如 (11) 200407877 0.1 mm的紫外光硬化聚（甲基）丙烯酸（DvR)*〇6 mm的聚 碳酸輯碟片（DVD)，使其與周圍環境隔離。當雷射光經由 保護層進入記錄堆疊時，保護層的光學品質必須良好，亦 即大致上沒有光學像差，且大致上厚度均勻。在此種情況 下’顯然保護層對雷射光為透明。 吾人可使用短波長雷射，例如波長為67〇 nm(紅）到4〇5
tim(藍）或甚至更短的雷射，在記錄堆疊的記錄層上達成資 料的記錄與抹除。 金屬反射層和介電均可使用真空沈積法製備。 根據本發明，可在濺鍍室内使用可調n2流量，從Αγ/Ν2 玫電環境中的Hf靶材以反應濺鍍法製備散熱層。吾人並不 排除製備散熱層的其他當方法。 、相變記錄層可藉由真空沈積法鍍在基板上。已知的真空 此積製程有蒸鍍（電子束蒸鍍、從坩堝以電阻加熱蒸鍍）、濺 錢、低壓化學氣相沈積（CVD)、離子電錄、離子束輔助蒸錄
、電漿強化CVD。一般的熱CVD製程由於反應溫度太高广 故不適用。 實施方式 圖1顯示一利用聚焦雷射光束3 〇進行可重霜官 夕 设咼八记錄之 夕堆疊光學資料儲存媒體20的一具體實施例。媒體具有基 板1，由聚碳酸酯（PC)製成，其一側沈積有： 土 第一記錄堆疊2 ’包含一相變類型記錄屑6。定 二 晶，仏 9 乐一纟己錄堆 t〜離聚焦雷射光束30最遠。 第一記錄堆疊3，包含一相變類型記錄堆叠12。 (12)200407877 __績貫. -道月間隔層9’介於記錄堆叠2和3之間。透明間隔声9 的厚度為30 μπι，較聚焦雷射光束3〇之焦點的深度大。
第一記錄堆疊的記錄層6含有原子組成為 Ge5.〇In5.5Sb65_0Te24.5的化合物，且厚度為1〇 nm。第一記錄 堆疊2内具有一金屬反射層4，其位置在第一記錄维最之紀 錄層離其他記錄堆疊3最遠的一側。金屬反射層4含；金屬 Ag，且厚度為100nm。記錄層ό與金屬反射層4之間具有一 介電層 '，厚度為25 nm。介電層5係由化合物(zns、_仏。 製成。第-記錄堆疊内具有一由HfNi 2製成的散熱層8，其 位置在最靠近第二記錄堆疊3的一側，厚度為13()11111。 ’、 第二記錄堆疊3的記錄層12含有原子成分為 〇€5.〇1115.55 1365.0丁624.5的化合物，且厚度為6nm。第二記錄堆 $ J内具有一由HfNi 2製成的散熱層10,其位置在最靠近第 一記錄堆疊2(與透明間隔層9相鄰）的一側，厚度為8〇11111。 第一。己錄堆& 3内具有由HfN κ2製成的其他散熱層丨4，其位
置在第二記錄堆疊3的記錄層12與散熱層1〇相對的一侧，厚 度為1〇〇 nm。有兩介電層11和13與第二記錄堆疊3的記錄層 12接觸，厚度各為20 nm，且係由化合物（ZnS)80(SiO2)2(^ 成0 有保π蔓層15存在，與其他散熱層相鄰，該層係由諸如 對雷射光為透明的紫外光硬化樹脂製成，厚度為100 μπι。吾 人亦可藉由一感壓膠（PSA)層施用一聚碳酯（pC)層，以製備 保護層1 5。 田己錄層6為非結晶相時，第一記錄堆疊2在670 nm之波 200407877 ⑼ 長的光學反射率定義為Ra，且其值為1.4%。當記錄層6為非 結晶相時，記錄堆疊2在67〇11111之波長的光學反射率定義為 Rc且值為28.7%。光學對比值為95.2%。光學對比係定義為 |Rc-Ra|/Rmax ’公式中Rmax是尺€和Ra任一項的最大值。針對 第二記錄層堆疊3，這些值是Ra==31〇/c)、rc = 14.4%，且光 學對比值為78.6%。當記錄層12處於非結晶相時，第二記錄 堆疊3在670 nm之波長的穿透率為52.2%(Ta),當記錄層12 處於結晶相時則為39.0°/〇(Tc)。 圖2顯示一利用聚焦雷射光束3〇進行可重覆寫入記錄之 多堆疊光學資料儲存媒體20的另一具體實施例。此處未描 述的圖2之參考號碼圖1完全相同，且已在該處描述。第一 記錄堆疊2内具有其他介電層7,其位置在最靠近第二記錄 堆豐3的一側’厚度為no nm。介電層7是由化合物 (ZnS)8〇(Si〇2)2〇製成。第二記錄堆疊3内具有由HfNi 2製成的 政熱層10，其位置在最靠近第一記錄堆疊2 ,且與透明間隔 層9相鄰的一側，厚度為1〇〇 nm。當記錄層6處於非結晶相 時，第一記錄堆疊2在670 nm波長的光學反射率定義為以 ，且其值為2.0%。當記錄層6處於結晶相時，記錄堆疊2在 670 nm之長的光學反射率定為！^，且其值為％』％。光學對 比值為9 3 · 5 %。光學對比值定義於上面。對於第二記錄堆最 3,這些值為Ra = 4.8%，Rc叫6·9% ’且光學對比值為心二 。當記錄層12處於非結晶相時，第二記錄堆疊3在67〇1^^之 波長的穿透率為51.0%(Ta)，當記錄層ι2處於結晶時則為 37.5% (Tc)。 200407877 、） |__職 田圖J顯不利用一聚焦雷射光束30進行可覆寫記錄的多堆 瓦光學貧料儲存媒體20。記錄層6和12均與四個由SiC製成 的附加層5’、7,、1和13,接觸。附加SiC層5,、7,、11'和13, 的厚度均為5 nm。圖3中的其他層與圖2之具體實施例中對 應的各層完全相同，但每一介電層5、7、11、13的厚度均 減少5 nm。這樣會造成一反射性與穿透性與圖2所述相同的 夕堆疊光學資料儲存媒體20。與記錄層6和12接觸的SiC層 5、7'、1Γ和13'增加了記錄層6和12的結晶速率。 圖4緣出從一 Ar/N2放電環境中的耵靶材進行反應性濺鍍 時化學式中的X對％流入量QN2(單位為sccm)的函數 圖形。直線41與各資料點吻合。 圖5顯示沉積之HfNx層在波長人=670 nm之折射率 -汝的虛部吸收率全迅速下降至〇」以下。此點表示於曲 線5 1。對於λ = 405 nm，吸收率稍微高一些，且仍維持於女= 〇_2的強度’此點表示於曲線52。為求完備，在λ = 670 nm 和λ = 405 nm這兩個不同波長之折射率3 = ”一认的實部”分 別示於曲線53和54。/7與的值是從在選定波長測量到的反 射率與穿透率計算出來的。 曲線55代表HfNx層的電導率（單位為，只要HfNx — 變成透明，亦即A < 0.2，即大幅增加。然而令人驚訝的是 ，熱傳導係數似乎增加得不多。因此根據本發明的HfNjf 料極適合做為透明散熱層，供多堆疊相變光學記錄媒體2〇 使用。 圖6顯示一實驗性堆疊60,玻璃製成的基板61、的 -19- 200407877 v ) lllPIl* A1層72、厚度為可變的散熱層63、（ZnS)8Q(Si〇2L製成的i〇 nm 電層64、製成的4〇 相變記錄層μ、以及 ()8Q(Si〇2)2Q裝成的9〇 nm介電層66組成。吾人測量堆叠 (P層為結晶層）的反射錢雷射光功率的函數，以決定臨界 熔解功率？£ (單位為㈤…）。反射率開始降低（由於非結晶態化） 時的功率定義為匕。Pt的值受相鄰的62、63、64和66各層的 々部忐力或散熱能力的影響。八丨層62與記錄層65之間各層 的熱阻決定記錄層65在何種程度上感受到…層“的存在。 因此，藉由決定記錄層65的匕，可間接得到層63和64之熱 阻的度量。由於層64的厚度與成分保持固定，故可測量不 同材料製成之散熱層的匕值，並將這些值轉換成熱阻。 圖7中，曲線7丨為記錄層65的p^i(ZnS)8〇(Si〇2)⑼製成之 散熱層63的厚度ths的函數圖形。曲線72顯示同樣的相依性 ，但使用氧化銦錫（1丁0)製成的散熱層63。曲線73和74分別 顯示使用HfNu和HfN"製成之散熱層63的結果。最後，曲 線75顯示A1製成之散熱層63的結果。如吾人可見，材料 HfN!」和HfN!.2壬現的pt值幾乎趨近純A!的值，ιτ〇的值則 遂較純Α1的值低。這表示根據本發明的HfNu和HfN"這些 材料，其熱傳導係數接近A1的熱傳導係婁文，因此可得到極 佳的冷卻行為或散熱動作，再加上光學透明性的優點。 應’主意以上所述之具體實施例與實驗性資料係為說明， 而非限制本發明，且熟悉本技藝之人士將可設計出許多種 其他的設計，而不偏離所附之申請專利範圍的範躊。在申 請專利範圍中，置於括弧之間的參考符號不應視為限制本 -20- 200407877
發明。用語「包含」不排除出現申& 甲^專利範圍中所列示者 以外的兀件或步驟。元件前的Γ _ 」或「一個」用語不排 除出現複數個此種元件。彼此不 h 1 j的相關申請專利範圍中 引用某些度量值的事實，並不表干 衣不不施有利地使用這些度 量值的組合。 根據本發明’吾人提供一種客祕® ϊ π 種夕堆®光學資料儲存媒體， 利用聚焦雷射光束進行可覆寫印样 _ ^ ^ 復馬°己餘。該媒體至少具有兩個 記錄堆疊’此堆疊含有相變型態的記錄層。被雷射光束照 射之記錄堆疊以外的其他記錄堆疊對f射光束具有高透明 性，再加上該堆疊中之記錄層的良好冷卻行為。此點係藉 由在至少一記錄堆疊中具有至少—HfNX製成的散熱層而達 到，其中 1.1 S X S 1.6 。 圖式簡單說明 吾人將藉由範例性具體實施例，並參照附圖，更詳細地 說明本發明。 圖1至3各顯示根據本發明的多堆疊光學資料儲存媒體， 其具體實施例之概要橫截面圖； 圖4顯示化學式HfNx中的X對HfN^^濺鍍製程期間使用之 “2流量QN2(單位為sccin)的函數圖形； 圖5顯示在兩個不同的波長人=405 nm和λ = 670 nm時沈 積的HfN』，其複數折射率开一认的實部"與虛部全對HfNx 層濺鍍製程期間使用之％流量qN2(單位為seem)的函數圖 形。 圖6顯示一實驗性的堆疊設計，用於決定在一 Ge[Sb2Te 200407877 發纖赚頁 記錄層與一鋁層間之散熱層的熱傳導能力。 圖7顯示圖6的記錄層之臨界熔解功率Pt(單位為mW)對不 同類型之散熱層厚度ths(單位為nm)的函數圖形。 圖式代表符號說明 1，61 2 3 4 5,7，11,13,64,66 6,65 8,10,14,63 9 15 20 30 60 61 基板 第一記錄堆疊 第.§己錄堆疊 金屬反射層 介電層 相變型態記錄層 散熱層 間隔層 保護層 多堆疊光學資料儲存媒體 聚焦雷射光束 實驗性堆疊 A1層 -22-

Claims (1)

  1. 拾、申請專利範圍 一聚焦雷射光 一基板（1)，其 1.種夕堆®光學資料儲存媒體（20)，利用 束（3〇)進行可覆寫記錄，該媒體pam 一側沉積有： -一％ — ，該第一 - 至少一 (12) ^ 。己錄堆豐(2) ’其包含一相變類型的記錄層 記錄堆疊⑺離聚焦雷射光束㈣最遠， 。他α己餘堆S⑺，包含_相變類型的記錄層
    -:透明間隔層⑼’位於記錄堆叠（2,3)之間，該透明 間隔層（9)的厚度大於聚焦雷射光束（3〇)的焦點深度， 其特徵為至少一記錄堆疊（3)内具有至少一散熱層（8, 10, 14) ’其所含之化合物可由化學式麵X表示，此化學 式中的Χ為每一 Hf原子的Ν原子數，且ii 6。
    2·如申請專利範圍第旧之光學資料儲存媒體（2〇)，其中在 至少一其他記錄堆疊内，最靠近第一記錄堆疊（2)(與透 明間隔層（9)相鄰）之其他記錄堆疊⑺的記錄層的一側， 具有一散熱層（10)。 3.如申凊專利範圍第1或2項中任何一項之光學資料健存 媒體（20)，其中包含散熱層（1〇)的其他記錄堆疊（3)内具 有其他散熱層（14)，該層所含之化合物可由化學式ΗίΝχ 表示，此化學式中的X為每一 Hf原子的n原子數，且1.1 < X S 1.6，其他散熱層（14)位於其他記錄堆疊（3)之記錄層 (12)與散熱層（10)之側相對的一側。 4 ·如申請專利範圍第1 - 3項中任何一項之光學資料儲存媒 體（20)，其中 1.2 s χ s i 3。 5. 如申凊專利範圍第3-4項中任何一項之光學資料儲存媒 體（20)，其中在第一記錄堆疊（幻内具有其他散熱層（8) ，其位置在第一記錄堆疊（2)的記錄層（6)最靠近其他記 錄堆疊（3)的一側，且第一記錄堆疊内具有散熱層， 其位置在第一記錄堆疊（2)的記錄層（6)離其他記錄堆疊 (3)最遠的一側。 6. 如申請專利範圍第1巧項中任何一項之光學資料儲存媒 體（20) ’其中在第一記錄堆疊（2)内具有一金屬反射層（4) ’其位置在第一記錄堆疊（2)的記錄層（6)離其他記錄堆 疊（3)最遠的一側。 7. 如申請專利範圍第1-6項中任何一項之光學資料儲存媒 體（20)，其中散熱層（1〇)和其他散熱層（8, 14)的厚度值各 為從5到200 nm之範圍中選出的值。 8. 如申請專利範圍第1 -7項中任何一項之光學資料儲存媒 體（20)，其中記錄層（6，12)係與至少一附加層（5、7、11，， 13')接觸，這些層所含的化合物係從八12〇3、5丨0、5丨3队 、MgO、ZnO和A1N(包含非化學計量組成）構成之群組中 選出，該附加層（5、7\ 11'，13')的最大厚度為1〇 nm。 9·如申請專利範圍第8項之光學資料儲存媒體（2〇)，其中記 錄層（6, 12)含有元素Ge和Te。 10.如申請專利範圍第1-9項中任何一項之光學資料儲存媒 體（20)，將其使用於多堆疊與高資料速率記錄。
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