TW200303938A - Electroplating solution containing organic acid complexing agent - Google Patents
Electroplating solution containing organic acid complexing agent Download PDFInfo
- Publication number
- TW200303938A TW200303938A TW092103070A TW92103070A TW200303938A TW 200303938 A TW200303938 A TW 200303938A TW 092103070 A TW092103070 A TW 092103070A TW 92103070 A TW92103070 A TW 92103070A TW 200303938 A TW200303938 A TW 200303938A
- Authority
- TW
- Taiwan
- Prior art keywords
- solution
- metal
- tin
- patent application
- plating
- Prior art date
Links
- 239000008139 complexing agent Substances 0.000 title claims abstract description 28
- 238000009713 electroplating Methods 0.000 title claims abstract description 16
- 150000007524 organic acids Chemical class 0.000 title description 3
- 239000002184 metal Substances 0.000 claims abstract description 51
- 229910052751 metal Inorganic materials 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 239000002131 composite material Substances 0.000 claims abstract description 26
- 150000001875 compounds Chemical class 0.000 claims abstract description 12
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- 238000007747 plating Methods 0.000 claims description 86
- CIWBSHSKHKDKBQ-JLAZNSOCSA-N Ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-JLAZNSOCSA-N 0.000 claims description 63
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 49
- 229960005070 ascorbic acid Drugs 0.000 claims description 28
- 235000010323 ascorbic acid Nutrition 0.000 claims description 26
- 239000011668 ascorbic acid Substances 0.000 claims description 26
- 150000003839 salts Chemical class 0.000 claims description 20
- 239000011248 coating agent Substances 0.000 claims description 18
- 238000000576 coating method Methods 0.000 claims description 18
- 239000004094 surface-active agent Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 16
- 239000002253 acid Substances 0.000 claims description 13
- 230000002829 reductive effect Effects 0.000 claims description 10
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- -1 gluconic acid Ketone Chemical class 0.000 claims description 9
- 230000002411 adverse Effects 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 claims description 7
- 229910021626 Tin(II) chloride Inorganic materials 0.000 claims description 6
- 229940050410 gluconate Drugs 0.000 claims description 6
- 239000002585 base Substances 0.000 claims description 5
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical compound [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 claims description 5
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical class [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 claims description 4
- 238000009833 condensation Methods 0.000 claims description 4
- 230000005494 condensation Effects 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910001174 tin-lead alloy Inorganic materials 0.000 claims description 4
- CIWBSHSKHKDKBQ-DUZGATOHSA-N D-araboascorbic acid Natural products OC[C@@H](O)[C@H]1OC(=O)C(O)=C1O CIWBSHSKHKDKBQ-DUZGATOHSA-N 0.000 claims description 3
- SBJKKFFYIZUCET-JLAZNSOCSA-N Dehydro-L-ascorbic acid Chemical compound OC[C@H](O)[C@H]1OC(=O)C(=O)C1=O SBJKKFFYIZUCET-JLAZNSOCSA-N 0.000 claims description 3
- SBJKKFFYIZUCET-UHFFFAOYSA-N Dehydroascorbic acid Natural products OCC(O)C1OC(=O)C(=O)C1=O SBJKKFFYIZUCET-UHFFFAOYSA-N 0.000 claims description 3
- IAJILQKETJEXLJ-UHFFFAOYSA-N Galacturonsaeure Natural products O=CC(O)C(O)C(O)C(O)C(O)=O IAJILQKETJEXLJ-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910052783 alkali metal Inorganic materials 0.000 claims description 3
- 150000001340 alkali metals Chemical group 0.000 claims description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims description 3
- 125000002947 alkylene group Chemical group 0.000 claims description 3
- 235000020960 dehydroascorbic acid Nutrition 0.000 claims description 3
- 239000011615 dehydroascorbic acid Substances 0.000 claims description 3
- 235000010350 erythorbic acid Nutrition 0.000 claims description 3
- 239000004318 erythorbic acid Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229940026239 isoascorbic acid Drugs 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- XWIJIXWOZCRYEL-UHFFFAOYSA-M potassium;methanesulfonate Chemical class [K+].CS([O-])(=O)=O XWIJIXWOZCRYEL-UHFFFAOYSA-M 0.000 claims description 3
- TXUICONDJPYNPY-UHFFFAOYSA-N (1,10,13-trimethyl-3-oxo-4,5,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-17-yl) heptanoate Chemical compound C1CC2CC(=O)C=C(C)C2(C)C2C1C1CCC(OC(=O)CCCCCC)C1(C)CC2 TXUICONDJPYNPY-UHFFFAOYSA-N 0.000 claims description 2
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims description 2
- 239000003513 alkali Substances 0.000 claims description 2
- 125000000217 alkyl group Chemical group 0.000 claims description 2
- 235000019270 ammonium chloride Nutrition 0.000 claims description 2
- 229940072107 ascorbate Drugs 0.000 claims description 2
- 229940097043 glucuronic acid Drugs 0.000 claims description 2
- 229910052976 metal sulfide Chemical class 0.000 claims description 2
- 239000001119 stannous chloride Substances 0.000 claims description 2
- 235000011150 stannous chloride Nutrition 0.000 claims description 2
- RCIVOBGSMSSVTR-UHFFFAOYSA-L stannous sulfate Chemical compound [SnH2+2].[O-]S([O-])(=O)=O RCIVOBGSMSSVTR-UHFFFAOYSA-L 0.000 claims description 2
- 150000003568 thioethers Chemical class 0.000 claims description 2
- 229910000375 tin(II) sulfate Inorganic materials 0.000 claims description 2
- 238000010494 dissociation reaction Methods 0.000 claims 2
- 230000005593 dissociations Effects 0.000 claims 2
- 239000007788 liquid Substances 0.000 claims 2
- 239000000126 substance Substances 0.000 claims 2
- RGHNJXZEOKUKBD-UHFFFAOYSA-N D-gluconic acid Natural products OCC(O)C(O)C(O)C(O)C(O)=O RGHNJXZEOKUKBD-UHFFFAOYSA-N 0.000 claims 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-N Gluconic acid Natural products OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C(O)=O RGHNJXZEOKUKBD-SQOUGZDYSA-N 0.000 claims 1
- IAJILQKETJEXLJ-RSJOWCBRSA-N aldehydo-D-galacturonic acid Chemical compound O=C[C@H](O)[C@@H](O)[C@@H](O)[C@H](O)C(O)=O IAJILQKETJEXLJ-RSJOWCBRSA-N 0.000 claims 1
- IAJILQKETJEXLJ-QTBDOELSSA-N aldehydo-D-glucuronic acid Chemical compound O=C[C@H](O)[C@@H](O)[C@H](O)[C@H](O)C(O)=O IAJILQKETJEXLJ-QTBDOELSSA-N 0.000 claims 1
- 150000008052 alkyl sulfonates Chemical class 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 238000013329 compounding Methods 0.000 claims 1
- 210000001787 dendrite Anatomy 0.000 claims 1
- 239000000174 gluconic acid Substances 0.000 claims 1
- 235000012208 gluconic acid Nutrition 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 abstract description 11
- 230000008021 deposition Effects 0.000 abstract description 6
- 229910021645 metal ion Inorganic materials 0.000 abstract description 5
- 230000003647 oxidation Effects 0.000 abstract description 4
- 238000007254 oxidation reaction Methods 0.000 abstract description 4
- 150000002894 organic compounds Chemical class 0.000 abstract description 3
- 125000002887 hydroxy group Chemical group [H]O* 0.000 abstract description 2
- 125000004430 oxygen atom Chemical group O* 0.000 abstract description 2
- 239000003002 pH adjusting agent Substances 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 91
- 239000003792 electrolyte Substances 0.000 description 24
- 238000002844 melting Methods 0.000 description 16
- 230000008018 melting Effects 0.000 description 16
- 239000000919 ceramic Substances 0.000 description 15
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 12
- 239000000654 additive Substances 0.000 description 12
- 238000012360 testing method Methods 0.000 description 11
- 230000007935 neutral effect Effects 0.000 description 10
- 239000000203 mixture Substances 0.000 description 8
- 229910001128 Sn alloy Inorganic materials 0.000 description 7
- 239000011521 glass Substances 0.000 description 7
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 238000004070 electrodeposition Methods 0.000 description 5
- HEMHJVSKTPXQMS-UHFFFAOYSA-M sodium hydroxide Inorganic materials [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 5
- 239000002211 L-ascorbic acid Substances 0.000 description 4
- 235000000069 L-ascorbic acid Nutrition 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 description 3
- RGHNJXZEOKUKBD-SQOUGZDYSA-M D-gluconate Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O RGHNJXZEOKUKBD-SQOUGZDYSA-M 0.000 description 3
- 229910000978 Pb alloy Inorganic materials 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000009472 formulation Methods 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 3
- 230000000670 limiting effect Effects 0.000 description 3
- 239000000615 nonconductor Substances 0.000 description 3
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 150000007513 acids Chemical class 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 235000006708 antioxidants Nutrition 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- XPPKVPWEQAFLFU-UHFFFAOYSA-J diphosphate(4-) Chemical compound [O-]P([O-])(=O)OP([O-])([O-])=O XPPKVPWEQAFLFU-UHFFFAOYSA-J 0.000 description 2
- 235000011180 diphosphates Nutrition 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 239000008151 electrolyte solution Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000008103 glucose Substances 0.000 description 2
- 229940093915 gynecological organic acid Drugs 0.000 description 2
- 235000005985 organic acids Nutrition 0.000 description 2
- 239000006259 organic additive Substances 0.000 description 2
- XOKSLPVRUOBDEW-UHFFFAOYSA-N pinane Chemical compound CC1CCC2C(C)(C)C1C2 XOKSLPVRUOBDEW-UHFFFAOYSA-N 0.000 description 2
- SCVFZCLFOSHCOH-UHFFFAOYSA-M potassium acetate Chemical compound [K+].CC([O-])=O SCVFZCLFOSHCOH-UHFFFAOYSA-M 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000009666 routine test Methods 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- AEQDJSLRWYMAQI-UHFFFAOYSA-N 2,3,9,10-tetramethoxy-6,8,13,13a-tetrahydro-5H-isoquinolino[2,1-b]isoquinoline Chemical compound C1CN2CC(C(=C(OC)C=C3)OC)=C3CC2C2=C1C=C(OC)C(OC)=C2 AEQDJSLRWYMAQI-UHFFFAOYSA-N 0.000 description 1
- CQMNNMLVXSWLCH-UHFFFAOYSA-B 2-hydroxypropane-1,2,3-tricarboxylate;tin(4+) Chemical compound [Sn+4].[Sn+4].[Sn+4].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O CQMNNMLVXSWLCH-UHFFFAOYSA-B 0.000 description 1
- RTZZCYNQPHTPPL-UHFFFAOYSA-N 3-nitrophenol Chemical compound OC1=CC=CC([N+]([O-])=O)=C1 RTZZCYNQPHTPPL-UHFFFAOYSA-N 0.000 description 1
- 241001519451 Abramis brama Species 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 241000272165 Charadriidae Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- NBSCHQHZLSJFNQ-GASJEMHNSA-N D-Glucose 6-phosphate Chemical compound OC1O[C@H](COP(O)(O)=O)[C@@H](O)[C@H](O)[C@H]1O NBSCHQHZLSJFNQ-GASJEMHNSA-N 0.000 description 1
- AEMOLEFTQBMNLQ-AQKNRBDQSA-N D-glucopyranuronic acid Chemical compound OC1O[C@H](C(O)=O)[C@@H](O)[C@H](O)[C@H]1O AEMOLEFTQBMNLQ-AQKNRBDQSA-N 0.000 description 1
- VFRROHXSMXFLSN-UHFFFAOYSA-N Glc6P Natural products OP(=O)(O)OCC(O)C(O)C(O)C(O)C=O VFRROHXSMXFLSN-UHFFFAOYSA-N 0.000 description 1
- 150000000994 L-ascorbates Chemical class 0.000 description 1
- 150000000996 L-ascorbic acids Chemical class 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 239000004260 Potassium ascorbate Substances 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- SPSRFSZFMZNHEK-UHFFFAOYSA-N [Th].S(O)(O)(=O)=O Chemical compound [Th].S(O)(O)(=O)=O SPSRFSZFMZNHEK-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 150000003934 aromatic aldehydes Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- JALQQBGHJJURDQ-UHFFFAOYSA-L bis(methylsulfonyloxy)tin Chemical compound [Sn+2].CS([O-])(=O)=O.CS([O-])(=O)=O JALQQBGHJJURDQ-UHFFFAOYSA-L 0.000 description 1
- GSHQMEDDMAFHJX-ZZMNMWMASA-L bis[[(2R)-2-[(1S)-1,2-dihydroxyethyl]-4-hydroxy-5-oxo-2H-furan-3-yl]oxy]lead Chemical compound OC[C@H](O)[C@H]1OC(=O)C(O)=C1O[Pb]OC1=C(O)C(=O)O[C@@H]1[C@@H](O)CO GSHQMEDDMAFHJX-ZZMNMWMASA-L 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000012458 free base Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- LLABTCPIBSAMGS-UHFFFAOYSA-L lead(2+);methanesulfonate Chemical compound [Pb+2].CS([O-])(=O)=O.CS([O-])(=O)=O LLABTCPIBSAMGS-UHFFFAOYSA-L 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- QEIDSSLUKKFBCE-UHFFFAOYSA-N methane;methanesulfonic acid Chemical group C.CS(O)(=O)=O QEIDSSLUKKFBCE-UHFFFAOYSA-N 0.000 description 1
- 229940098779 methanesulfonic acid Drugs 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 231100000989 no adverse effect Toxicity 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 229930006728 pinane Natural products 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 235000011056 potassium acetate Nutrition 0.000 description 1
- 235000019275 potassium ascorbate Nutrition 0.000 description 1
- 229940017794 potassium ascorbate Drugs 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- OTYBMLCTZGSZBG-UHFFFAOYSA-L potassium sulfate Chemical compound [K+].[K+].[O-]S([O-])(=O)=O OTYBMLCTZGSZBG-UHFFFAOYSA-L 0.000 description 1
- 229910052939 potassium sulfate Inorganic materials 0.000 description 1
- 235000011151 potassium sulphates Nutrition 0.000 description 1
- CONVKSGEGAVTMB-RXSVEWSESA-M potassium-L-ascorbate Chemical compound [K+].OC[C@H](O)[C@H]1OC(=O)C(O)=C1[O-] CONVKSGEGAVTMB-RXSVEWSESA-M 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- PPASLZSBLFJQEF-RKJRWTFHSA-M sodium ascorbate Substances [Na+].OC[C@@H](O)[C@H]1OC(=O)C(O)=C1[O-] PPASLZSBLFJQEF-RKJRWTFHSA-M 0.000 description 1
- 235000010378 sodium ascorbate Nutrition 0.000 description 1
- 239000000176 sodium gluconate Substances 0.000 description 1
- 235000012207 sodium gluconate Nutrition 0.000 description 1
- 229940005574 sodium gluconate Drugs 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 239000012085 test solution Substances 0.000 description 1
- 238000005382 thermal cycling Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910001432 tin ion Inorganic materials 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- CVNKFOIOZXAFBO-UHFFFAOYSA-J tin(4+);tetrahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[Sn+4] CVNKFOIOZXAFBO-UHFFFAOYSA-J 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
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- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/30—Electroplating: Baths therefor from solutions of tin
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
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- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/30—Electroplating: Baths therefor from solutions of tin
- C25D3/32—Electroplating: Baths therefor from solutions of tin characterised by the organic bath constituents used
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Abstract
Description
200303938200303938
软、發明說明 (發明說明應敘明:發明所屬之技術領域、先前技術、内容、實施方式及圖式簡單說明) I術領域 本發明係關於金屬的沉積;更特定言之,係關於在由可 電鍍基材如金屬,或由具有可電鍍和不可電鍍部份之複合 物件所組成之物品或物件上之錫或錫-鉛合金的沉積。本 發明亦描述一種可在電沉積過程中抑制多數此類複合物 件熔化的方法,此與在單位質量中具有大表面積且對熔化 敏感之小型電器組件的電鍍有關。本文特別感興趣的是諸 如具有金屬部份與陶瓷、玻璃或塑膠部份之表面黏著電容 器和電阻器的電器組件。 先前拮術 電器組件的大小近年來已經顯著地減小,這種尺寸的減 小已經使得這些組件的電鍍明顯地更加困難。此外’許多 表面黏著技術(SMT)組件具有敏感的陶瓷部份’其會被強 酸或強驗溶液所破壞。為了避免此問題,中性或接近中性 pH的電鍍溶液是較佳的。 -- 特別調配成與敏感的陶瓷SMTs相容之中性或接近中性 pH的錫和錫/鉛合金電解液描述於美國專利第4,163,700號 、第 4,329,207 號、第 4,640,746 號、第 4,673,470和第 4,681,670號中。 這些專利中所述的調配物包括如檸檬酸鹽、葡萄糖酸鹽或 焦磷酸鹽等組份的錯合劑,用來與錫和/或銲錯合,亚使 錯合物在所需的高pHs下溶解於溶液中。 先前技藝溶液的使用具有組件會在電/儿積過私中耦合 或凝聚的持續性問題。當以錫或錫合金電鍍具有平坦表面 200303938 _ 门、 I發明說明續頁 之小組件時,該組件在電鍍過程中有群集傾向是相當平常 的。當滾桶電鍍SMT組件時,有多達進料的10%會耦合(亦 即黏在一起)並非異常。在一些情況下,整個進料會熔融 在一起形成大塊。此問題的程度視電鍍溶液組成和電鍍方 法及組件的幾何形狀而定。此問題在錫-鉛合金電鍍中特 別明顯。 特別調配成與敏感的陶兗SMTs相容之中性或接近中性 p Η的錫和錫/鉛合金電鍍液有一些好處,但其並非針對零 件熔化的問題。此外,頃發現對陶瓷的侵蝕乃強烈地受電 解液組成及ρ Η的影響。先前技藝之電解液已被發現即使 在接近中性的ρ Η下也會傷害新的低火陶瓷;而且尚有關 於在薄鍍零件上之錫晶鬚成長的問題,因此一種防晶鬚錫 鍍層是所希望的。本發明現提供一種溶液和方法可以克服 此問題,並提供所希望的鍍層。 發J月内容 ' · 本發明係關於一種用於與一或多種金屬在可電鍍基材 上的沉積有關命溶液。此溶液包含水、量足以在可電鍍基 材上提供金屬鍍層的金屬離子、和錯合劑。該錯合劑較佳 地是一種具有介於4和1 8個碳原子間的有機化合物,其包 括至少兩個經基和含至少一個氧原子的五或六環。該錯合 劑是以足以錯合金屬並使其溶在溶液中的量存在。此外, 該錯合劑可抑制溶液中之金屬離子的氧化。當金屬離子具 有可在溶液中以至少兩種不同價態存在的能力時,錯合劑 可避免金屬由較低價態氧化至較高價態。若需要的話,在 200303938 _ η、 I發明說明續頁 溶液中可包含一種適當的pH調整劑以使溶液的pH維持在 2和10的範圍間。在最佳pH範圍中,該溶液對於具有可電 鍍部份和不可電鍍部份之複合物件的電鍍是特別有用的 ,且不會對不可電鍍部份有不利的影響。 錯合劑較佳地具有下列結構之一:Software and description of invention Deposition of tin or tin-lead alloys on electroplatable substrates, such as metals, or articles or articles composed of composite articles with plateable and non-platable parts. The present invention also describes a method that inhibits the melting of most of these composite parts during electrodeposition, which is related to the plating of small electrical components that have a large surface area per unit mass and are sensitive to melting. Of particular interest in this article are electrical components such as capacitors and resistors with metal and ceramic, glass, or plastic parts on the surface. Previously, the size of electrical components has been significantly reduced in recent years, and this reduction in size has made it significantly more difficult to plate these components. In addition, 'many surface mount technology (SMT) components have sensitive ceramic parts' which can be destroyed by strong acids or strong test solutions. To avoid this problem, a neutral or near neutral pH plating solution is preferred. -Tin and tin / lead alloy electrolytes specially formulated to be compatible with sensitive ceramic SMTs at neutral or near neutral pH are described in U.S. Patent Nos. 4,163,700, 4,329,207, 4,640,746, 4,673,470, and No. 4,681,670. The formulations described in these patents include component complexing agents such as citrate, gluconate or pyrophosphate, which are used to mix with tin and / or solder to sub-complex the complex at the desired high pHs Dissolve in solution. The use of prior art solutions has a persistent problem that components can couple or condense in electrical / electrical accumulation. When tin or tin alloy plating is applied to a small component with a flat surface 200303938 _ Gate, I Invention Description Continued, it is quite common that the component has a tendency to cluster during the plating process. When the barrel is electroplated with SMT components, it is not unusual for up to 10% of the feed to become coupled (ie stick together). In some cases, the entire feed will fuse together to form large pieces. The extent of this problem depends on the composition of the plating solution and the plating method and the geometry of the component. This problem is particularly noticeable in tin-lead alloy plating. Specially formulated tin and tin / lead alloy plating baths that are compatible with sensitive ceramic 兖 SMTs to be neutral or near neutral pΗ have some benefits, but they are not aimed at the problem of component melting. In addition, it was found that the erosion of ceramics was strongly affected by the composition of the electrolyte and ρ Η. Electrolytes of the prior art have been found to harm new low-fire ceramics even at near neutral ρ ρ; and there are still questions about tin whisker growth on thin plated parts, so a whisker-resistant tin coating Is expected. The present invention now provides a solution and method which can overcome this problem and provide the desired coating. The present invention relates to a solution for the deposition of one or more metals on an electroplatable substrate. This solution contains water, metal ions in an amount sufficient to provide a metal plating layer on a plateable substrate, and a complexing agent. The complexing agent is preferably an organic compound having between 4 and 18 carbon atoms, which includes at least two vials and five or six rings containing at least one oxygen atom. The complexing agent is present in an amount sufficient to complex metals and dissolve them in the solution. In addition, the complexing agent can suppress the oxidation of metal ions in the solution. When the metal ion has the ability to exist in solution in at least two different valence states, the complexing agent can prevent the metal from oxidizing from a lower valence state to a higher valence state. If necessary, in 200303938 _ η, I Invention Description Continued The solution may contain a suitable pH adjuster to maintain the pH of the solution in the range of 2 and 10. In the optimal pH range, this solution is particularly useful for electroplating of composite objects having electroplatable portions and non-platable portions, and does not adversely affect non-platable portions. The complexing agent preferably has one of the following structures:
RCRC
I (T-CR)m cr2or 其中每一個R是相同或不同的,且為氫或1至3個碳原子的 低碳烷基;T是R、OR或0= P(OR)2-; Z是0=或RO- ; η是2-4 且Ζ在結構中每次的出現可以是相同或不隄的;而m是1 - 3 ,或者錯合劑是此結構的一種可溶解鹽。最佳的化合物包 括抗壞血酸、異抗壞血酸、脫氫抗壞金酸、葡萄糖型抗壞 血酸、半乳糖鉍酸、葡萄糖醛酸和6 -磷酸葡萄糖、或其鹽 類。典型的鹽類包括鹼金屬或鹼土金屬。這些錯合劑通常 以約25至200公克/升的量存在。 本發明亦關於一種在複合物件上電鍍金屬鍍層的方法 ,該複合物件包括可電鍍和不可電鍍部份。本_方法包括使 此物件的大部分與一種本文所述之溶液接觸,然後在溶液 中通入電流,以在物件的可電鍍部分提供金屬電鍍層而不 會對物件的不可電鍍部分有不利的影響。較佳的金屬電鍍 200303938 _ ⑷ I發明說明續頁 層是錫金屬或錫-鉛合金,而較佳的物件為電子組件。 實施方式 現今已發現複合物件電子組件的熔化可經由提供一種 本文所揭示之包括一或多種錯合劑的電解液而將其大部 分排除,尤其抗壞血酸和相關化合物作為此類錯合劑是最 佳的。 雖然該錯合劑亦可用在電鍍其他金屬,特別是那些具有 多重價態金屬的溶液中,但是其在電鍍錫或錫-鉛鍍層的 溶液中是較有用的。這些錯合劑幫忙使溶液中的金屬維持 在其較低價態之一,因而促進電鍍步驟並避免金屬的氧化 (其會影響溶液正當操作)。在這些系統中四價錫也會被錯 合。 上述調配物的任一種錯合劑均可用在本發明中,較有利 的錯合劑是有機酸,較佳的試劑包括抗壞血酸、異抗壞血 酸_、脫氫抗壞血酸、葡萄糖型抗壞血酸、序乳糖醛酸、和 葡萄糖醛酸。這些酸的鹽類也可以使用,較佳的鹽類是鹼 金屬或鹼土金屬鹽類。可以使用葡萄糖酸酮,因為這些化 合物會在鍍浴中轉化成抗壞血酸;葡萄糖酸庚酯類由於在 溶液中會轉化成類似的酸性物種也是適用的。任一種這些 試劑均可在約25至200公克/升的典型量下使用。最佳的錯 合劑是抗壞血酸或一種抗壞血酸鹽,因為這些化合物是價 格較低且易購得的。 抗壞血酸是以純粹的抗壞血酸、一種抗壞血酸鹽如抗壞 血酸納或钾、和/或抗壞血酸-金屬錯合物,例如抗壞血酸 200303938 _ I發明說明續頁 錫包含在溶液中。當希望使用其他酸性的組份如有機酸或 有機酸鹽維持所要的溶液p Η時,後者是較佳的。抗壞血 酸存在的量應至少足以使存在溶液中的金屬溶解在特定 pH的溶液中,因此所需抗壞血酸的量係與金屬濃度成比 例。在1 5公克/升的錫濃度時,較佳的抗壞血酸濃度是約 45至200公克/升。 任何可電鍍的基材都可用本發明的溶液電鍍。通常,這 些基材是由諸如銅、鎳、鋼鐵或不鏽鋼等金屬製成。在現 今的市售產品中,需要電鍍的零件是以愈來愈小的尺寸製 造,尤其電子組件是此類零件的一個典型實例;而且,這 些零件是具有可電鍍和不可電鍍部分的複合物件。當金屬 部分是金屬或金屬性時,不可電鍍部分通常是陶瓷、玻璃 或塑膠。本溶液特別適用於電鍍此類複合物件。 電鍍溶液可以具有在2-10間的任何pH,但為了使溶液與 被_電鍍的電子組件相容,pH較佳地是在絢3和7.5的範圍内 ,且更佳地是約4至5.5。當組件具有金屬的和無機的部份 時,較佳的ρ Η範圍可使金屬鍍在金屬的部分而不會對無 機的部分有不利的影響。通常,非常高或非常低pH的溶 液會破壞被電鍍複合物件的陶瓷部分。 基本上雖然任何酸或鹼都可用作ρ Η調整,但是這些溶 液最好不含可感知量的游離酸或游離鹼。由於溶液通常是 酸性的,因此使用鹼或鹼性組份將游離酸轉化成相當的鹽 類。用作此目的之較佳的鹼包括氫氧化鈉或氫氧化鉀及許 多其他的驗。 200303938 _ ⑹ I發明說明續頁I (T-CR) m cr2or where each R is the same or different and is hydrogen or a lower alkyl group of 1 to 3 carbon atoms; T is R, OR or 0 = P (OR) 2-; Z Is 0 = or RO-; η is 2-4 and each occurrence of Z in the structure can be the same or non-bank; and m is 1-3, or the complexing agent is a soluble salt of this structure. The most preferred compounds include ascorbic acid, erythorbic acid, dehydroascorbic acid, glucose-type ascorbic acid, galactobismuth acid, glucuronic acid and glucose 6-phosphate, or salts thereof. Typical salts include alkali metals or alkaline earth metals. These complexing agents are usually present in an amount of about 25 to 200 grams / liter. The invention also relates to a method for electroplating a metal plating layer on a composite object, the composite object including a plateable and non-platable portion. The method includes contacting a large portion of the article with a solution described herein, and then applying a current to the solution to provide a metal plating layer on the electroplatable portion of the article without adversely affecting the non-platable portion of the article. influences. Better metal plating 200303938 _ ⑷ I Description of the invention Continuation sheet The layer is tin metal or tin-lead alloy, and the preferred object is an electronic component. Embodiments It has now been found that the melting of electronic components of composite objects can be largely eliminated by providing an electrolyte including one or more complexing agents disclosed herein, and ascorbic acid and related compounds are particularly preferred as such complexing agents. Although the complexing agent can also be used in the plating of other metals, especially those having multiple valence metals, it is more useful in the plating of tin or tin-lead plating solutions. These complexing agents help maintain the metal in the solution in one of its lower valence states, thereby facilitating the plating step and avoiding the oxidation of the metal, which can affect the proper operation of the solution. Tetravalent tin is also mismatched in these systems. Any of the above complexing agents can be used in the present invention. The more advantageous complexing agents are organic acids. The preferred agents include ascorbic acid, erythorbic acid, dehydroascorbic acid, glucose-type ascorbic acid, sequential lacturonic acid, and glucose Alkyd. Salts of these acids can also be used. Preferred salts are alkali metal or alkaline earth metal salts. Ketone gluconate can be used because these compounds are converted to ascorbic acid in the plating bath; heptyl gluconate is also suitable due to conversion to similar acidic species in solution. Either of these agents can be used in a typical amount of about 25 to 200 g / L. The best blending agents are ascorbic acid or an ascorbate salt because these compounds are less expensive and readily available. Ascorbic acid is pure ascorbic acid, an ascorbic acid salt such as sodium or potassium ascorbate, and / or ascorbic acid-metal complexes, such as ascorbic acid 200303938 _I Description of the Invention Continued Tin is contained in the solution. The latter is preferred when it is desired to use other acidic components such as organic acids or organic acid salts to maintain the desired solution pΗ. Ascorbic acid should be present in an amount at least sufficient to dissolve the metal present in the solution in a solution of a specific pH, so the amount of ascorbic acid required is proportional to the metal concentration. At a tin concentration of 15 grams / liter, the preferred ascorbic acid concentration is about 45 to 200 grams / liter. Any electroplatable substrate can be electroplated with the solution of the present invention. Typically, these substrates are made of a metal such as copper, nickel, steel, or stainless steel. In today's commercial products, parts that need to be plated are made in ever smaller sizes, especially electronic components are a typical example of such parts; moreover, these parts are composite objects with plateable and non-platable parts. When the metal part is metallic or metallic, the non-platable part is usually ceramic, glass or plastic. This solution is particularly suitable for plating such composite objects. The plating solution can have any pH between 2-10, but in order to make the solution compatible with the electronic components being plated, the pH is preferably in the range of 3 and 7.5, and more preferably about 4 to 5.5. . When the component has metallic and inorganic parts, the preferred range of ρ 可使 allows the metal to be plated on the metallic part without adversely affecting the inorganic part. Generally, very high or very low pH solutions will destroy the ceramic portion of the plated composite article. Although essentially any acid or base can be used for the pH adjustment, these solutions preferably do not contain a sensible amount of free acid or free base. Since the solution is usually acidic, use a base or alkaline component to convert the free acid to a comparable salt. Preferred bases for this purpose include sodium or potassium hydroxide and many others. 200303938 _ ⑹ I Description of Invention Continued
溶液係調配成與被電鍍基材相容,且較佳地對基材沒有 不利的效果。當電鍍具有可電鍍和不可電鍍部分的複合物 件時,溶液應調配成不會侵蝕或弄裂基材的不可電鍍部分 。一種簡單的試驗可用來測量基材/溶液的相容性,將被 電鍍物件完全浸入計畫溶液中維持一段時間,該時間係等 於或大於電鍍過程中所用的時間。溶液的溫度可以是接近 電鍍過程中之溶液溫度,或是在加速試驗中所用的高溫。 該零件浸在溶液中經過所需時間後,接著將其取出並稱重 以測量在浸泡過程中溶液侵#該物件所產生的重量損失。 例如,現今用於電容器製品的複合物件是用低火陶瓷所 製,這些陶瓷較之習知陶瓷含有較大比例的玻璃,在電鑛 過程中有更易於受到侵蝕的傾向。一種簡單的比較試驗被 用來測量不同市售溶液與根據本發明之溶液的相容性:將 電容器放入含等量這些溶液的燒杯中,在5小時的浸泡後 測量零件的重量損失。結果顯示於下表中\ : 溶液 在溶液中浸泡5小時後的ί量損失 (%) : 競爭者A(以葡萄糖酸鹽為主,pH值 1.0% 3.5的浸浴) 競爭者A(以葡萄糖酸鹽為主,pH值4 0.5% 的浸浴) - 競爭者B(以檸檬酸鹽為主,pH值4.2 5.0% 的浸浴) 本發明(抗壞血酸浴,pH值5) 0.0% -10- 200303938 (7) 發明說明續頁 此表顯示本發明對電容器基本上並無影響’而且與習知鍍 浴相比,對於此類組件的電鍍是實質的改良。 電鑛此類電器組件的一個特別有用的設計揭示於美國 專利第6,193,858號中,無須於本文中再加以敘述。對於需 要的範圍,該專利的全文係以參考的方式明確地揭示於本 文。 對於先前專利系統的改良已經揭示於公開的國際申請 書(Published International Application)第 WO 02/053809號中,其全 文係以參考的方式明確地併入本中。如這份申請書所揭示 ,電鑛室浸入電解液中代表一種明顯的改良,可外部溶解 的電極現已可用在其中。 頃發現含本發明之錯合劑的電解液能夠電沉積锡或锡 而且不 鉛合金,同時將電鍍零件的熔化或耦合減至最少, 這 會對物件的不可電鍍部分有不利的影響。關於@ _ 、^ ~ 點, 些-電解液是優於先前技藝者,尤其是以檸檬酸纟 ’ 主的缝 浴。錯合劑係用來使溶液中的錫和/或鉛維持# $ L ^ ^ %解液的 pH ;某些錯合劑,尤其是抗壞血酸,亦做為、拽々 、 J - π避务—, 疋〜價錫 氧化成四價錫的安定劑。 L-抗壞血酸(ΑΑ)可輕易地轉化成L-脫氫抗掠 一 " 仅灰酸(DAA、 鲷基轉The solution is formulated to be compatible with the substrate to be plated, and preferably has no adverse effect on the substrate. When plating composite parts with plateable and non-platable parts, the solution should be formulated so as not to erode or crack the non-platable parts of the substrate. A simple test can be used to measure substrate / solution compatibility. The plated object is completely immersed in the solution for a period of time equal to or greater than the time used in the plating process. The temperature of the solution can be close to the temperature of the solution during the plating process, or the high temperature used in the accelerated test. After the part has been immersed in the solution for the required time, it is then removed and weighed to measure the weight loss caused by the solution invading the object during the immersion. For example, today's composite articles for capacitor products are made of low-fire ceramics. These ceramics contain a larger proportion of glass than conventional ceramics and tend to be more susceptible to erosion during the power ore process. A simple comparison test was used to measure the compatibility of different commercially available solutions with the solution according to the invention: a capacitor was placed in a beaker containing an equivalent amount of these solutions, and the weight loss of the part was measured after 5 hours of immersion. The results are shown in the following table:: Loss (%) of the solution after soaking in the solution for 5 hours: Competitor A (mainly gluconate, pH 1.0% 3.5 bath) Competitor A (based on glucose Acid salt-based, pH 4 0.5% bath)-Competitor B (mainly citrate, pH 4.2 5.0% bath) The present invention (ascorbic acid bath, pH 5) 0.0% -10- 200303938 (7) Description of the invention Continuation sheet This table shows that the present invention has basically no effect on capacitors' and that plating of such components is a substantial improvement over conventional plating baths. A particularly useful design for electrical components of this type is disclosed in U.S. Patent No. 6,193,858 and need not be described further herein. To the extent required, the full text of this patent is expressly disclosed herein by reference. Improvements to the previous patent system have been disclosed in Published International Application No. WO 02/053809, the entire text of which is expressly incorporated herein by reference. As disclosed in this application, the immersion of the electrical room into the electrolyte represents a significant improvement, and externally dissolvable electrodes are now available. It was found that the electrolyte containing the complexing agent of the present invention is capable of electrodepositing tin or tin without lead alloys while minimizing the melting or coupling of plated parts, which may adversely affect the non-plated parts of the object. Regarding the @ _, ^ ~ points, some-electrolyte is superior to the previous artist, especially the main bath with citric acid. The complexing agent is used to maintain the tin and / or lead in the solution to maintain the pH of the solution. Some complexing agents, especially ascorbic acid, are also used as 々, J-π avoidance, , ~ Stabilizers that oxidize tin into tetravalent tin. L-ascorbic acid (AA) can be easily converted to L-dehydroanti-scratching-" Only gray acid (DAA, bream-based conversion
化成羥 成AA 。此外,DAA可以經由將兩個在相鄰碳上的 基、連結那些原子的單鍵轉化成雙鍵而輕易地_ 刀吧回復 。八八轉化成〇八八的容易性使得八八成為一種強^^ 蚀延原劑。在 本發明的電鍍溶液中,A A可幫助錫離子在-庐At 一 &恕及四價 態錯合,此避免或至少減少了會沉澱形成沉積物 、 、而對溶液 -11 - 200303938 (8) 發明說明續頁 性能有不利影響的錫氧化物的形成。 根據本發明之一個較佳的溶液包含水、一種二價錫鹽和 做為錯合劑的抗壞血酸,且視需要地包含一種二價鉛鹽、 . 一種增加電傳導性的鹽類、一種界面活性劑或一種促進陽 _ 極溶解的試劑。 可用在本發明的二價錫鹽包括硫酸亞錫、氯化亞錫、氧 化亞錫、甲烷磺酸亞錫、抗壞血酸亞錫或任何其他適當的 二價錫來源。溶液中二價錫的濃度可以是由5至100公克/ φ 升,且最佳地是由10至50公克/升。如上所述,因為本發明 的錯合劑也會錯合四價錫鹽’因此沒有疑慮地添加四價錫 鹽到溶液中以取代二價錫鹽或與其一起併用是可能的。 可視需要添加以提供錫-鉛鍍層的鉛鹽包括任何溶液可 溶的二價錯鹽,其包括例如甲烧續酸斜、醋酸錯或抗壞血 酸鉛。Converted to hydroxyl to AA. In addition, DAA can be easily converted into a double bond by converting two radicals on adjacent carbons, and a single bond connecting those atoms into a double bond. The ease of transforming 1988 into 008 makes it a strong ^^ etchant. In the electroplating solution of the present invention, AA can help tin ions to be mixed in the tetravalent state, which avoids or at least reduces the formation of deposits, and the solution -11-200303938 (8 ) DESCRIPTION OF THE INVENTION The formation of tin oxides which adversely affect the performance of the continuation sheet. A preferred solution according to the present invention contains water, a divalent tin salt and ascorbic acid as a complexing agent, and optionally a divalent lead salt, a salt for increasing electrical conductivity, and a surfactant Or an agent that promotes cation dissolution. Divalent tin salts useful in the present invention include stannous sulfate, stannous chloride, stannous oxide, stannous methanesulfonate, stannous ascorbate or any other suitable source of divalent tin. The concentration of divalent tin in the solution may be from 5 to 100 g / L, and most preferably from 10 to 50 g / L. As described above, since the complexing agent of the present invention is also complexed with a tetravalent tin salt ', it is possible to add the tetravalent tin salt to the solution without any doubt to replace or use the divalent tin salt together. The lead salts that may be added as needed to provide a tin-lead coating include any solution-soluble divalent bisalts, including, for example, methanesulfonic acid, diacetate, or lead ascorbate.
.若需要的話,溶液的導電性可以經由一種鹽類的添加而 增加。若希望是純錫溶液,可以使用如硫酸鉀的單純鹽類 ;若希望是錫錯合金,則甲烷磺酸鉀或醋酸鉀是較適當 的。必要時,金屬硫化物鹽類也可以使用。這些鹽類的任 一種都可用來促進陽極溶解並幫助電沉積。 一般用在錫或錫合金電解液中的界面活性劑可以包含 在溶液中以改善鍍層晶體結構,並改良高電流密度時之鍍 層品質。較佳的界面活性劑包括溶液可溶的環氧烷縮合化 合物、溶液可溶的四級銨-脂肪酸化合物、溶液可溶的氧 化胺化合物、溶液可溶的三級胺化合物或其混合物。一種 -12- 200303938 (9) 發明說明續頁 較佳的界面活性劑是環氧烷縮合化合物,其係以約〇·〇1至 2 0公克/升的量存在。雖然一些添加弹1在被電鍛物件的柄 合方面可以進行得比其他添加劑好,但因為在鍍層外觀上 對於此組份並無臨界條件,故其他習知的界面活性劑也可 以使用。此藝中具有一般技藝者可進行例行測試以決定任 何特別電鍍溶液的最適當界面活性劑。If desired, the conductivity of the solution can be increased by the addition of a salt. If a pure tin solution is desired, a simple salt such as potassium sulfate can be used; if a tin alloy is desired, potassium methanesulfonate or potassium acetate is more appropriate. If necessary, metal sulfide salts can also be used. Any of these salts can be used to promote anodic dissolution and aid electrodeposition. Surfactants commonly used in tin or tin alloy electrolytes may be included in the solution to improve the crystal structure of the coating and improve the quality of the coating at high current densities. Preferred surfactants include solution-soluble alkylene oxide condensation compounds, solution-soluble quaternary ammonium-fatty acid compounds, solution-soluble amine oxide compounds, solution-soluble tertiary amine compounds, or mixtures thereof. A -12-200303938 (9) Description of the Invention Continued The preferred surfactant is an alkylene oxide condensation compound, which is present in an amount of about 0.001 to 20 g / liter. Although some added bullets 1 can perform better than other additives in the handle of the electroforged object, because there are no critical conditions for this component in the appearance of the coating, other conventional surfactants can also be used. Those skilled in the art can perform routine tests to determine the most appropriate surfactant for any particular plating solution.
當需要明亮的鍍層時,芳族醛可以足夠做為光亮劑的量 加入。必要時,其他習知的光亮劑可替代使用。 被電鍍基材較佳地是那些具有導電和非導電部分的複 合物件。當金屬部分是金屬或金屬性時,非導電零件通常 是陶瓷、玻璃或塑膠。本溶液對於電鍍此種複合物件是特 別有用的,不會對物件的非金屬部分有不利的影響,且不 會引起此零件的溶化。 當需要電鍍在複合基材電子組件上時,電鍍液的pH較 佳_地是保持在約4至5.5的範圍間。pH可以利用鹼,例如氫When a bright coating is required, the aromatic aldehyde can be added in an amount sufficient as a brightener. If necessary, other conventional brighteners may be used instead. The substrates to be plated are preferably those having a composite of conductive and non-conductive portions. When the metal part is metallic or metallic, the non-conductive part is usually ceramic, glass or plastic. This solution is particularly useful for electroplating such composite objects, does not adversely affect the non-metallic parts of the object, and does not cause the part to melt. When electroplating is required on a composite substrate electronic component, the pH of the plating solution is preferably kept in the range of about 4 to 5.5. pH can use bases, such as hydrogen
氧化鉀、氫氧化銨、氫氧化鈉或其類似物的添加來提升; 或以酸,如硫酸或甲烧石黃酸來降低。因為硫酸會產生不溶 於溶液的硫酸鉛(其有沉澱的傾向),烷或烷醇磺酸、如曱 烧續酸對錫-船合金溶液是較佳的。如上所述,約4至5.5 的p Η會對此類金屬的黏聚產生最強的抑制作用;而且, 為了抑制並使黏聚作用最小,抗壞血酸的量不應遠超過錯 合錫所需的量。 用於錫和錫-錯溶液的典型抗氧化劑可以包括在本發明 的溶液中(例如揭示於美國專利地4,871,429號中的鄰苯二 -13 - 200303938 發明說明續頁 (ίο) 酚或對苯二酚);然而,抗壞血酸已被發現在中性或接近 中性pH之電解溶液對於避免二價錫氧化成四價錫是有效 的。因此,抗壞血酸在本溶液中具有作為錯合劑和抗氧化 . 劑的雙重功能。 _ 同時頃發現經由將本發明的電鍍溶液調配到具有低電 鍍能力,複合物件之非導電部分的電鍍和複合物件的熔化 可以被減至最小或大部分消除。這些溶液係特別調配到在 低電流密度時不會沉積金屬,此與習知應用,將電解液調 φ 配成在儘可能寬的電流密度範圍下沉積金屬相反。實際上 ,多數習知的錫電鍍溶液係藉由添加各種添加劑大範圍 地延展電沉積的電流密度範圍。頃發現零件的熔化可經由 限制電沉積的電流密度範圍到較高電流密度而減少。咸信 熔化的發生是由於金屬沉積在緊密接觸的兩零件間或零 件與饋電線間之電解液薄膜。因為沉積是發生在兩導電表 面_間的薄膜上,其必須在低電流密度時才\會肇生,藉由將Increase by adding potassium oxide, ammonium hydroxide, sodium hydroxide, or the like; or decrease by acid, such as sulfuric acid or methamidite. Because sulfuric acid produces lead-insoluble sulfate (which has a tendency to precipitate), alkane or alkanol sulfonic acids, such as thorium sulphuric acid, are preferred for tin-boat alloy solutions. As mentioned above, p Η of about 4 to 5.5 will have the strongest inhibitory effect on the cohesion of such metals; moreover, in order to suppress and minimize the cohesion, the amount of ascorbic acid should not exceed the amount required for complex tin . Typical antioxidants for tin and tin-hydroxide solutions can be included in the solution of the present invention (e.g., o-phthalenedi-13 as disclosed in U.S. Patent No. 4,871,429-200303938 Description of the Invention Continued (ίο) phenol or p-benzenediene Phenol); however, ascorbic acid has been found to be effective in avoiding the oxidation of divalent tin to tetravalent tin in electrolytic solutions at neutral or near neutral pH. Therefore, ascorbic acid has a dual function as a complexing agent and an antioxidant in this solution. _ At the same time, it has been found that by formulating the plating solution of the present invention to have a low electroplating ability, the plating of the non-conductive portion of the composite article and the melting of the composite article can be minimized or largely eliminated. These solutions are specially formulated to not deposit metals at low current densities, as opposed to conventional applications where electrolytes are adjusted to deposit metals at as wide a range of current densities as possible. In fact, most conventional tin plating solutions extend the current density range of electrodeposition in a wide range by adding various additives. It was found that the melting of parts can be reduced by limiting the range of electrodeposition current density to higher current densities. Xianxin Melting occurs because the metal is deposited on the electrolyte film between two parts in close contact or between the part and the feeder. Because the deposition occurs on the thin film between the two conductive surfaces, it must be initiated at a low current density.
電解液調配成在低電流密度下不會電鍍,則熔化可以減至 最少。 一 頃發現零件熔化係與電解浴組成密切相關,而適當晶粒 細化劑或界面活性劑的選擇對於將熔化減至最少是重要 的。關於此點,僅含金屬鹽和錯合劑的單純電解液已被發 現可電鍍表面黏著技術(SMT)組件而無熔化的情形,所得 的錫鍍層是一種深灰色冰銅,在商業用途上是不被接受的 。當典型的界面活性劑或晶粒細化劑被加到電解液以改 善鍍層品質時,在幾乎所有的情況下均觀察到非常強的熔 -14- 200303938 發明說明續頁 (11) 化,此顯示來自界面活性劑和晶粒細化劑的陰極表面極化 作用強烈地影響零件熔化。而且,頃發現含有在低電流密 度下提供有限覆蓋之添加劑的電解液比含有在低電流密 度下提供高度覆蓋之添加劑者有較少的熔化傾向。The electrolyte is formulated so that it will not be electroplated at low current densities, and melting can be minimized. It was found that the melting of the part is closely related to the composition of the electrolytic bath, and the selection of an appropriate grain refiner or surfactant is important to minimize melting. In this regard, a simple electrolyte containing only a metal salt and a complexing agent has been found to plate electroplated surface adhesion technology (SMT) components without melting. The resulting tin plating is a dark gray matte, which is not commercially useful. Accepted. When a typical surfactant or grain refiner is added to the electrolyte to improve the quality of the coating, a very strong melt is observed in almost all cases. -14-200303938 Invention Description Continued (11) It is shown that cathodic surface polarization from surfactants and grain refiners strongly affects part melting. Moreover, it has been found that electrolytes containing additives that provide limited coverage at low current densities have less tendency to melt than those containing additives that provide high coverage at low current densities.
一般相信在桶中或其他適當設備中電鍍個別組件的調 配溶液必須具有南電鑛能力’因此電流將穿過進料而在大 部份進料間沉積金屬。同時也很清楚的是在低電流密度下 的電鍍速度是可忽略的,因為並無實質量的金屬在此情況 下沉積;正確地說,多數的金屬是在高電流密度下於接近 電鍍桶周圍處沉積。因此,現已發現只要零件本身沒有低 電流密度區域如凹處或盲孔,則不需要提供具有高電鍍能 力的溶液在桶或其他適當裝置中電鍍個別組件。It is generally believed that the formulation solution for plating individual components in a barrel or other suitable equipment must have Nanning Power ' s capability so the current will pass through the feed and deposit metal in most of the feed. It is also clear that the plating speed at low current densities is negligible because no solid metal is deposited in this case; correctly, most metals are near the plating barrel at high current densities. Everywhere deposited. Therefore, it has been found that as long as the part itself does not have low current density areas such as recesses or blind holes, it is not necessary to provide a solution with a high plating ability to plate individual components in a bucket or other suitable device.
而且,在低電流密度不會沉積金屬的電鍍溶液將使複合 物件上非導電部分的金屬沉積減至最少。由物件的導電末 端_延伸至非導電部分上的金屬沉積現象通常稱做潛變或 橋接。此現象的程度主要視非導電物質的組成而定,例如 具有一些電導度的陶瓷物質比是良好絕緣體的陶資/物質 有較多金屬潛變的傾向。咸信潛變是電沉積時電流由物件 的導電部份滲漏到π非導電π複合部份所造成。藉由將金屬 沉積限制在高電流密度狀況,金屬在非導電部份上的沉積 可以減到最少或消除。 本發明的電鍍溶液也可幫忙降低或消除鍍層中晶鬚的 存在,這些是電鍍後鍍層中的細絲於某些熱條件下成長所 造成。此晶鬚頃發現是低電壓設備短路的一個原因。而且 -15- 200303938 發明說明續頁 (12) ,晶鬚可由鍍層中脫離,並在其他區域累積而進一步引發 短路問題或干擾機械操作。藉由本文揭示之電鍍溶液的使 用,晶鬚生成的程度明顯減少且可完全消除。 本發明的電鍍溶液可以調配成較佳地具有下列特質和 優點: 1.其會沉積一種白色無光澤至半透明的鍍層。 2 .其不會破壞被塗佈的組件。Furthermore, plating solutions that do not deposit metals at low current densities will minimize metal deposition on non-conductive portions of the composite. The phenomenon of metal deposition extending from the conductive end of an object to a non-conductive part is commonly referred to as creep or bridging. The extent of this phenomenon depends mainly on the composition of non-conductive materials. For example, ceramic materials with some electrical conductivity tend to have more metal creep than ceramic materials / materials that are good insulators. Xianxin latent is caused by the current leakage from the conductive part of the object to the π non-conductive π composite part during electrodeposition. By limiting metal deposition to high current density conditions, metal deposition on non-conductive portions can be minimized or eliminated. The plating solution of the present invention can also help reduce or eliminate the presence of whiskers in the coating, which are caused by the growth of the filaments in the coating after plating under certain thermal conditions. This whisker was found to be a cause of short circuit in low voltage equipment. And -15- 200303938 Invention Description Continued (12), the whiskers can be detached from the coating and accumulated in other areas to further cause short circuit problems or interfere with mechanical operation. By using the plating solution disclosed herein, the degree of whisker formation is significantly reduced and completely eliminated. The plating solution of the present invention can be formulated to preferably have the following characteristics and advantages: 1. It will deposit a white matte to translucent plating layer. 2. It will not damage the coated components.
3 .其不會在低電流密度時沉積金屬。 4 .當鍍層接著曝露到熱條件時,其可減少或甚至消除晶鬚 生成。3. It does not deposit metal at low current densities. 4. When the coating is subsequently exposed to thermal conditions, it can reduce or even eliminate whisker formation.
當被電鍍零件是包含陶瓷或含鉛玻璃部分的複合物件 時,酸或鹼溶液在電鍍時會破壞陶瓷或玻璃部分,如SMT 電阻器、感應線圈和電容器等組件都是這種類型。為了將 對物件之陶瓷或玻璃部分的傷害減到最低,用於SMT組件 之_電鍍溶液的pH必須在約2.5和9之間。為:T達到此pH,錫 必須是錯合的塑式。先前技藝錯合劑一般包括檸檬酸鹽、 葡萄糖酸鹽和焦磷酸鹽;然而為了電鍍半透明鍍層/一般 使用一或多種有機添加劑。多數的熟知添加劑會大大增加 溶液的低電流密度覆蓋,導致被電鍍零件的熔化和零件非 導電部份的外鍍層。 電解液的低電流密度覆蓋可以猎由在南金屬濃度下才呆 作、在高溫下操作、選擇不會增加低電流密度覆蓋(LCDC) 或可降低LCDC和/或其任何組合的添加劑將其減少。例如 ,當錫是被電鍍金屬時,至少約2 5公克/升的高金屬離子 -16** 200303938 發明說明續頁 (13) 含量是較佳的。由於頃發現高溫通常會增加零件熔化,高 的鍍浴溫度是減低LCDC最不希望使用的方法。When the plated part is a composite object containing ceramic or lead-containing glass parts, the acid or alkali solution will destroy the ceramic or glass parts during plating. Components such as SMT resistors, induction coils and capacitors are all this type. In order to minimize damage to the ceramic or glass part of the article, the pH of the plating solution used for SMT components must be between about 2.5 and 9. For: T to reach this pH, tin must be a mismatched plastic form. Prior art complexing agents generally include citrate, gluconate, and pyrophosphate; however, for translucent plating / one or more organic additives are generally used. Most of the well-known additives greatly increase the low current density coverage of the solution, resulting in melting of the plated parts and overcoating of the non-conductive parts of the parts. The low current density coverage of the electrolyte can be reduced by operating at a low metal concentration, operating at high temperatures, choosing not to increase the low current density coverage (LCDC), or reducing the LCDC and / or any combination of additives to reduce it . For example, when tin is electroplated metal, high metal ions of at least about 25 g / l -16 ** 200303938 Description of the Invention Continued (13) content is preferred. Since it has been found that high temperatures usually increase part melting, high plating bath temperatures are the least desirable method of reducing LCDC.
鍍浴中有機添加劑的選擇在使電鍍能力維持在低等級 方面是特別重要的。最佳的添加劑可由對有興趣之特定電 鍍溶液的例行試驗來決定。這些添加劑包括習知的界面活 性劑和晶粒細化劑,如單或多芳環有機化合物的縮合化合 物及其他具有似染料性質但不是界面活性劑的有機縮合 物或反應產物。這些化合物在此藝中是習知的,故僅做確 保其不會提供電鍍溶液高電鍍能力的試驗。The choice of organic additives in the plating bath is particularly important in maintaining the plating ability at a low level. The optimal additive can be determined by routine testing of the particular plating solution of interest. These additives include conventional surfactants and grain refiners, such as condensation compounds of mono- or polyaromatic organic compounds and other organic condensates or reaction products that have dye-like properties but are not surfactants. These compounds are well known in the art, so only tests to ensure that they do not provide the high plating ability of the plating solution.
其他添加劑也可與界面活性劑和晶粒細化劑併用以降 低電解液的電鍍能力。當與各種界面活性劑和晶粒細化劑 一起使用時,氯化銨、抗壞血酸和間-硝基酚已被發現可 降低電鍍能力。明顯地,許多其他的添加劑也有此種功能 ,而這些其他添加劑的使用是本發明的一個主題。此藝中 具_有一般技藝者都可進行例行試驗以決定使_用或不使用 最佳的添加劑組合於任何特定的電鍍溶液中。 當電鍍複合物件時,本溶液可用在揭示於美國專~利第 6,193,858號和公開的國際申請書第WO 02/053809號的設備中 。本發明的電鍍溶液也可以用在美國專利第5,487,824號和 第5,565,079號所述之旋轉式電鍍裝置中並獲致改良的結果 ,由於錫在饋電線圈的沉積實質減少,使得需要置換和拆 除饋電線的維修明顯減少。 因此,在旋轉式電鍍裝置中使用具減低之LCDC的電解 液也是本發明的一個主題。使用電鍍桶時,因為較少的金 -17- 200303938 發明說明續頁 (14) 屬沉積在懸捶上,且金屬潛變及零件熔化減少,本發明的 使用也是有利的。所以,在桶電鍍中LCDC電解液的使用 也是本發明的一個主題。 雖然本發明在電鍍無導體的複合物件上是特別有用的 ,在電鍍混有導體之個別物件上,本發明的使用具有降低 饋電線上之電鍍和降低或消除金屬在複合物件之非導電 部分上沉積的明顯優點。Other additives can also be used with surfactants and grain refiners to reduce the plating ability of the electrolyte. When used with various surfactants and grain refiners, ammonium chloride, ascorbic acid, and m-nitrophenol have been found to reduce plating ability. Obviously, many other additives also have this function, and the use of these other additives is a subject of the present invention. Those skilled in the art can perform routine tests to determine whether or not to use the best combination of additives in any particular plating solution. When plating composite articles, this solution can be used in the equipment disclosed in U.S. Patent No. 6,193,858 and published International Application No. WO 02/053809. The electroplating solution of the present invention can also be used in the rotary electroplating devices described in US Pat. Nos. 5,487,824 and 5,565,079, and improved results are obtained. Since the deposition of tin in the feed coil is substantially reduced, the feed line needs to be replaced and removed Maintenance is significantly reduced. Therefore, the use of an electrolytic solution with reduced LCDC in a rotary electroplating apparatus is also a subject of the present invention. When using electroplating barrels, the use of the present invention is also advantageous because less gold is deposited on the stilt, and metal creep and part melting are reduced because of less gold. Therefore, the use of LCDC electrolyte in barrel plating is also a subject of the present invention. Although the present invention is particularly useful in plating non-conductor composite objects, the use of the present invention in reducing the plating of feeders and reducing or eliminating metal on non-conductive parts of composite objects is useful in plating individual objects mixed with conductors. Clear advantages of deposition.
測試電解液之LCDC的一種有用的方法是使用標準265毫 升何式槽(hull cell)試驗。使用標準步驟運轉何式槽,典型 的條件是在1 A下運轉5分鐘、0.5 A下5分鐘或0.25 A下5分 鐘,每一種均使用槳式攪拌。若何式槽板的背面除了由面 板邊緣延伸小於1公分的部分外,大部分是未電鍍的,則 在1 A下製備的何式槽有LCDC ;此外,電解液最佳地在前 面低電流密度邊緣有未電鍍的部分,此未電鍍部分可以由 1/8"至3/4’’的英吋寬。顯現此類型之何式槽板結果的電解液 與在何式槽面板背面產生明顯電鍍的電解液相較,通常具 有較少的熔化傾向。使金屬無法沉積之限制電流密度~可以 經由在0.25 A製備何式槽板,並使用適當的何式槽板刻度 測定金屬鍍層邊緣之電流密度而測得。 此外,當在SBE裝置中使用具LCDC的電解液於無導體之 最新SMTs時,通常發現饋電線在電鍍循環終點大部分並未 鍍上錫,且電鍍零件未熔化至饋電線。相反妁,當使用市 售的中性錫電鍍液在SBE無導體電鍍SMTs時,零件在電鍍 開始的三分鐘内即卡住,且發現饋電線已完全被錫所塗覆 -18 - 200303938 發明說明續頁 (15) 。因此,具LCDC之錫或錫合金電解液的使用對於在SBE裝 置中成功電鍍無導體SMTs是必須的。 實例 下面的實例說明本發明之有用具體實施例。 實例1 : 由下列溶液和下列電鍍條件得到純的錫電鍍層。 抗壞血酸 100公克/升A useful method for testing the LCDC of an electrolyte is to use a standard 265 milliliter hull cell test. Standard procedures are used to run any type of tank. Typical conditions are 5 minutes at 1 A, 5 minutes at 0.5 A, or 5 minutes at 0.25 A, each using paddle agitation. If the back of the Hoch plate is mostly unplated except for the portion extending from the edge of the panel that is less than 1 cm, the Hoch groove prepared at 1 A has LCDC; in addition, the electrolyte is best at the front with low current density There are unplated parts on the edges. This unplated part can be from 1/8 "to 3/4" inches wide. The electrolyte exhibiting the results of this type of grooved plate generally has less tendency to melt than an electrolyte that produces a significant plating on the back of the plate. Limiting current density that prevents metal from being deposited can be measured by preparing a Hood plate at 0.25 A and measuring the current density at the edge of the metal plating using an appropriate Hood plate scale. In addition, when the electrolyte with LCDC is used in the latest SMTs without conductors in the SBE device, it is usually found that the feeders are not mostly tin-plated at the end of the plating cycle and the plated parts are not melted to the feeders. In contrast, when a commercially available neutral tin plating solution is used to electroplate SMTs on SBE non-conductor, the parts are stuck within three minutes of the start of plating, and it is found that the feeder is completely coated with tin-18-200303938 Continued (15). Therefore, the use of tin or tin alloy electrolytes with LCDC is necessary for successful plating of non-conductor SMTs in SBE devices. Examples The following examples illustrate useful specific embodiments of the present invention. Example 1: A pure tin plating layer was obtained from the following solution and the following plating conditions. Ascorbic acid 100 g / l
錫(甲烷磺酸鹽形式) 15公克/升 界面活性劑 0.5毫升/升 以KOH調整pH至: 4.05 上述溶液會在至高20 ASF的電流密度下沉積半透明的錫。 實例2 : 將1.5公克/升的甲烷磺酸鉛加到實例1的溶液中並在相 同條件下電鍍,得半透明錫-鉛鍍層。 抗壞血酸 100公克/升 ' .Tin (methanesulfonate form) 15 g / l Surfactant 0.5 ml / l Adjust pH with KOH to: 4.05 The above solution will deposit translucent tin at a current density of up to 20 ASF. Example 2: 1.5 g / l of lead methanesulfonate was added to the solution of Example 1 and electroplated under the same conditions to obtain a translucent tin-lead coating. Ascorbic acid 100 g / l '.
錫(曱烷磺酸鹽形式)15公克/升 鉛(甲烷磺酸麈形式)1.5公克/升 ' 甲烷磺酸鉀 40公克/升 界面活性劑 0.5毫升/升 以KOH調整pH至: 4.05 此溶液會在至高20 ASF的電流密度下也沉積半透明90% 的錫。 對照實例: 在2.5”長4”寬的桶中,用140毫升、2.5毫米半徑的導電球 -19- 200303938 (16) 發明說明續頁 作為導體,使用實例1的調配物電鍍錫到250片、8毫 徑的平面墊片上。在5 A、6.5 V下電鍍進料1 5分鐘。 鍍循環的終點,沒有任何平面墊片熔化在一起。 使用下列調配物的電解液進行相同的電鍍循環: 檸檬酸 錫(甲烷磺酸鹽形式) 鉛(甲烷磺酸鹽形式) 曱烷磺酸鉀 界面活性劑 以KOH調整pH至: 在5 A和9 V下電鍍進料15分鐘。在電鍍循環的終點, 12片沒有連在一起,其餘的墊片係以多達10片的量成 聚在一起,且很難分開。此實例清楚地證明本發明溶 優異性。 實例3 : 、一 下列實例說明由本發明之電鍍溶液產生的鍍層與 技藝之電鍍溶液比較,錫晶鬚生成的減少。 如上所述,當鑛層曝露於熱處理或條件時(如那些 鍍零件運轉時所遭遇的),晶鬚生成的問題會產生。 可能花費一週至5年的時間成長,且當其成長後,其 引起短路或其他問題。為了測量晶鬚生成是否會在這 層中發生,一種加速試驗已經被發展出來:一種熱循 驗,其係將電鍍零件放進一個溫度控制在-55°C的室 分鐘;接著在2 0秒内將其轉移至另一個溫度室,並 米半 在電 40公克/升 1 〇公克/升 1.5公克/升 40公克/升 2.5毫升/升 4.2 只有 群凝 液的 先前 在電 晶鬚 可能 些鍍 環試 中15 在125 -20- 200303938 發明說明續頁 (17) °C的溫度下令其在其中經過另外的1 5分鐘。重覆此循環 500次,觀察是否有晶鬚在鍍層上生成。 用實例1的溶液以錫電鍍基材,然後對其進行上述的熱 循環試驗500個循環;另一個基材是以來自習知葡萄糖酸 鈉電鍍液的錫電鍍,電鍍後的基材亦進行相同的熱循環試 驗500個循環。 結果顯示於圖1 -4中。在圖1和2中,根據本發明之電鍍 零件的表面顯示出非常小、非常短的晶鬚,其係相對無害 φ 的。比較上,根據先前技藝的電鍍零件則顯示出長很多及 多很多的晶鬚生成,因此使電鍍物件有較多的可能引發短 路或可能的機械干擾(若較長的晶鬚被移出)。因此,本發 明的電鍍層是好很多的,特別是在小零件(如電子組件) 需要有錫鍍層的時候。 圖示簡單說明 _本發明的進一步優點將以圖示說明,其、中:Tin (methanesulfonate form) 15 g / l lead (methane methanesulfonate form) 1.5 g / l 'potassium methane sulfonate 40 g / l surfactant 0.5 ml / l Adjust pH with KOH to: 4.05 This solution It will also deposit translucent 90% tin at current densities up to 20 ASF. Comparative Example: In a 2.5 "long and 4" wide bucket, a conductive ball of 140 millimeters and a radius of 2.5 millimeters is used. 19- 200303938 (16) Description of the Invention The continuation sheet is used as a conductor, and the preparation of Example 1 is used to electroplat tin to 250 pieces. 8 millimeter diameter flat gasket. Plating feed at 5 A, 6.5 V for 15 minutes. At the end of the plating cycle, no flat gaskets have melted together. The same plating cycle was performed using the electrolytes of the following formulations: tin citrate (methane sulfonate form) lead (methane sulfonate form) potassium pinane sulfonate surfactant pH adjusted with KOH to: 5 A and 9 Plating feed at V for 15 minutes. At the end of the plating cycle, the twelve pieces were not connected, and the rest of the spacers came together in as many as ten pieces and were difficult to separate. This example clearly demonstrates the solubility of the invention. Example 3: The following examples illustrate the reduction in tin whisker formation when compared to the plating solution produced by the plating solution of the present invention and the technical plating solution. As mentioned above, when the ore is exposed to heat treatment or conditions (such as those encountered when plated parts are in operation), whisker generation problems can occur. It can take a week to five years to grow, and when it grows, it can cause short circuits or other problems. To measure whether whisker formation will occur in this layer, an accelerated test has been developed: a thermal cycler that places the plated part in a chamber controlled at -55 ° C for minutes; then in 20 seconds Transfer it to another temperature chamber, and measure a half meter at 40 g / l, 10 g / l, 1.5 g / l, 40 g / l, 2.5 ml / l, 4.2, and only the previously condensate of the group condensate may be coated In the ring test, 15 let it pass another 15 minutes at a temperature of 125 -20- 200303938 description (17) ° C. Repeat this cycle 500 times and observe if whiskers are formed on the coating. The solution of Example 1 was used to plate the substrate with tin, and then subjected to the above-mentioned thermal cycle test for 500 cycles; the other substrate was tin-plated from a conventional sodium gluconate plating solution, and the plated substrate was also subjected to the same procedure. Thermal cycling test 500 cycles. The results are shown in Figures 1-4. In Figures 1 and 2, the surface of the plated part according to the present invention shows very small, very short whiskers, which are relatively harmless φ. In comparison, electroplated parts according to the prior art show much and much longer whisker formation, so that there are more plating objects that may cause short circuits or possible mechanical interference (if longer whiskers are removed). Therefore, the plating layer of the present invention is much better, especially when small parts (such as electronic components) need tin plating. Brief description of the diagrams _ Further advantages of the present invention will be illustrated by diagrams, of which:
圖1是以根據先前技藝電鍍溶液的錫電鍍之基材的顯微 照片; - ' 圖2是以根據本發明電鍍溶液的錫電鍍之相同基材的顯 微照片; 圖3是以根據先前技藝電鍍溶液的錫電鍍之基材的一部 份表面的放大顯微照片;及 圖4是以根據本發明電鍍溶液的錫電鍍之基材的一部份 表面的放大顯微照片。 -21 -Fig. 1 is a photomicrograph of a tin-plated substrate according to the prior art plating solution;-'Fig. 2 is a photomicrograph of the same substrate for tin electroplating according to the plating solution of the present invention; An enlarged photomicrograph of a portion of a surface of a tin-plated substrate of a plating solution; and FIG. 4 is an enlarged photomicrograph of a portion of a surface of a tin-plated substrate of a plating solution according to the present invention. -twenty one -
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| US35733002P | 2002-02-15 | 2002-02-15 |
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| JP (1) | JP2005517814A (en) |
| KR (1) | KR20040085194A (en) |
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| AU (1) | AU2003217344A1 (en) |
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| TWI653239B (en) | 2013-12-05 | 2019-03-11 | 美商哈尼威爾國際公司 | Stannous methansulfonate solution with adjusted ph |
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| TW200712266A (en) * | 2005-07-11 | 2007-04-01 | Technic | Tin electrodeposits having properties or characteristics that minimize tin whisker growth |
| US20070034118A1 (en) * | 2005-08-12 | 2007-02-15 | Jardine Leslie A | Dosage efficient, storage stable compositions for reducing chromium (VI) in cement |
| WO2007088600A1 (en) * | 2006-02-01 | 2007-08-09 | Murata Manufacturing Co., Ltd. | Process for producing ceramic electronic part, and plating bath |
| EP1918426A1 (en) * | 2006-10-09 | 2008-05-07 | Enthone, Inc. | Cyanide free electrolyte composition und process for plating silver or alloys thereof on substrates |
| US20110206909A1 (en) * | 2008-10-31 | 2011-08-25 | Sundew Technologies Llc | Coatings for suppressing metallic whiskers |
| ES2616051T3 (en) | 2008-12-02 | 2017-06-09 | Wave Life Sciences Japan, Inc. | Method for the synthesis of modified nucleic acids in the phosphorus atom |
| JP4435862B1 (en) | 2009-02-06 | 2010-03-24 | 謙治 出分 | Silver-containing alloy plating bath and electrolytic plating method using the same |
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| US10428019B2 (en) | 2010-09-24 | 2019-10-01 | Wave Life Sciences Ltd. | Chiral auxiliaries |
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| CN104593835B (en) * | 2015-02-04 | 2017-10-24 | 广东羚光新材料股份有限公司 | The neutral tin plating electrolyte electroplated for chip components and parts termination electrode |
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| JP6842469B2 (en) | 2016-03-08 | 2021-03-17 | ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. | Phase change material |
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| US5085744A (en) * | 1990-11-06 | 1992-02-04 | Learonal, Inc. | Electroplated gold-copper-zinc alloys |
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| TWI653239B (en) | 2013-12-05 | 2019-03-11 | 美商哈尼威爾國際公司 | Stannous methansulfonate solution with adjusted ph |
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| KR20040085194A (en) | 2004-10-07 |
| WO2003071001A1 (en) | 2003-08-28 |
| US20030159938A1 (en) | 2003-08-28 |
| CN1633519A (en) | 2005-06-29 |
| AU2003217344A1 (en) | 2003-09-09 |
| TWI296289B (en) | 2008-05-01 |
| MY151335A (en) | 2014-05-15 |
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| CN100469942C (en) | 2009-03-18 |
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