TW200301896A - Programming circuit for a programmable microelectronic device, system including the circuit, and method of forming the same - Google Patents

Abstract

A circuit for programming a microelectronic device is disclosed. The circuit is configured to provide a reversible bias across the microelectronic device to perform erase and write functions. One configuration of the programming circuit includes one or more inputs coupled to the programmable device and a complimentary metal-oxide semiconductor circuit coupled to the programmable device. This design allows for writing and erasing of the programmable cell using a low and high voltage input.

Description

200301896 V. Description of the invention (1) Comparison of related applications: This application is US Patent No. 60/345, 931 "Programmable Circuit for Programmable Metallized Cells (applied on January 3, 2002) PROGRAMMABLE CIRCUITRY FOR THE PROGRAMMABLE METALLIZATION CELL ". 1. [Technical Field to which the Invention belongs] The present invention relates to a programmable microelectronic device, and particularly to a circuit for applying a write and / or erase voltage. This circuit longitudinally supplies energy to the device and / or the polarity of the energy. The Dingfu storage class is stored in the same place and is not presumed to be a hidden recessive record. To its point, the use of Yiqiu can make the habitually installed warp suits the same as the Chinese body without the brain to remember its telegraph. There are 1 and some technical systems of this type. The pre-class material is the first charge per digit. The binary type is, for example, a random access memory (RAM) that can be seen by a personal brainband. It generally belongs to volatile semiconductor memory (v. Utiie semiconductor memory). In other words, when the power is cut off and unplugged, the stored information will be lost. The dynamic random access memory (Dynamic DRAM) must be refreshed every few millionths of a second to (microsecond), that is, recharged, to retain the stored data, so it is highly volatile .

Page 5 200301896 V. Description of the invention (2) The static random access memory (Static DRAM) can keep the poor material after writing once. Only the power will keep the original state without being cut off. But if the power is cut off, the shell material will disappear. Therefore, this type of volatile memory 1, 2 will only retain information when the system is not powered off. Generally speaking, two = 1 ^^ 1 devices occupy a considerable amount of chip area, which will be more expensive during manufacturing, and in order to store data, it will also consume considerable energy. From the above, we need more advanced memory devices for personal computers and similar devices. Its = storage devices such as magnetic disks, hard disks and magnetic tapes, etc. Magnetic disks, CDs, CDs — Rw and comments!) — Rw, etc. are considered non-volatile memory. Second, they have extremely high capacity. , And can be overwritten multiple times. Unfortunately, these memory devices are bulky and vulnerable to impact / vibration. ,: And the transmission mechanism is expensive, t consumes a considerable amount of power. These negative factors make this type of memory device unsuitable for low-power portable applications such as laptops and handheld digital assistants (PDAs). Self-fixation The number of small, low-power, portable systems and handheld devices that can frequently change stored data has grown rapidly, which is part of the reason why low-power read / write devices such as Lu Jiyi's body are becoming more and more important. In addition, portable systems usually need to store data when shutting down. Households :: volatile storage devices are a better choice. Know-how

200301896

I 置。 I set. In PRQJ {, there is a device called “Using fusible” programming, you cannot repeat the process. 5. Description of the invention (3) Program non-volatile semiconductor memory can be written once and read many times (WORM ) 'S wiring array. The WORM device is formalized.

PjOM types also include erasable (erasaMe) programmable read-only, ΐ μ is called EPRQM, and electronically erasable programmable read-only memory (EEPR0M). This kind of device can be changed after being programmed. EPROM I generally needs to be erased. Usually, it is irradiated with ultraviolet rays before being programmed. Therefore, this type of device is not suitable for use in a portable electronic device. The device is relatively easy to program, but it also has some disadvantages. In particular, the EEPROM devices are quite complicated, and they are quite difficult to manufacture, and their volume is relatively large. In addition, the circuit containing EEPROM must bear the high voltages that X can use to program. Therefore, compared with other data storage methods, EEPROM is very costly per bit. Although EEpROM can keep data on the day of power failure, it needs a lot of power in the process of programming. For a battery-powered portable system, this power burden is considerable. The main memory like flash memory (FLASH) -type memory is also quite expensive. The production process is also quite complicated. Therefore, we need an improved memory device that is easy to manufacture and relatively inexpensive to manufacture. In addition, we need circuits that can be programmed for such devices.

200301896 V. Description of the invention (4) III. [Summary of the invention] The present invention provides an improved microelectronic programmable circuit, a structure and a system of a programmable circuit, and a method for forming the same. More specifically, the present invention provides a programming circuit for providing a voltage for writing and / or erasing to a programmable device. A system containing such circuits and related programmable structures can replace traditional non-volatile and volatile memorabilia. Next, it will be discussed in detail how the present invention overcomes some of the shortcomings of the current programmable architecture. On the whole, the program circuit and the programmable device disclosed in the present invention are relatively easy to manufacture, the cost is relatively cheap, and the purpose of programming is also quite easy to achieve. In various embodiments of the present invention, the programmable structure includes an ion conductor and at least two electrodes. When a first polarity is applied between the two electrodes, one or more electronic characteristics of the structure are changed. In one case of this embodiment, when a first polarity bias is applied between the two electrodes, the resistance of the structure is changed. In another case, when a first polarity is applied between the two electrodes, the capacitance or other electronic characteristics of the structure are changed. According to another situation of this embodiment, we can reverse the change amount of the programmable characteristic by applying a sufficient amount of the second polar bias'. And the change of one or more electronic characteristics and the amount of change can be detected, so we can

200301896 V. Description of the invention (5) The circuit containing this structure can retrieve the stored information. According to the present invention, a circuit for programming and / or erasing a programmable device includes a plurality of voltage input terminals and a plurality of switches between a voltage source and a ground and a voltage input terminal. In this embodiment = the programming circuit uses the first power a (for example, a positive power =) and the second power ® (for example, a negative voltage) to program and / or set the circuit. In a special case of this embodiment, the program is connected to a voltage input and a complementary circuit of the programmable device. In other different cases of this embodiment, the program circuit is a passive load and / or an active load. Except for another embodiment ... stylized and / or wiped off, the circuit of 1 2 ί includes a single write voltage input terminal, a plurality of seleet switeh are turned on, a plurality of switches are connected to the switch, and the check = Ground) and the write voltage input. The selection can be made between the voltage input terminal and the programmable device. Select the switch to delete. The special programmable structure in 歹 1 can be selectively written or erased. In another embodiment, the programmable device can be in a basic circuit. However, in one case of Cheng Yi in this embodiment, the base contains a program in another embodiment of the electric program embodiment, the memory device is covered by ", and the wire between the program circuit and the memory is use

200301896 V. Description of the invention (6) The base pressure bell has a conductive wiring scheme (私) in the private structure. 4. [Embodiment] Here, the present invention can be described with various different functional elements. It should be noted that the functional elements referred to here can be implemented by any number of hardware or structural elements that can perform specific functions. For example, the present invention can use various integrated components, including different electronic devices, such as resistors, transistors, capacitors, diodes, and similar components, and the value of the components can be adjusted appropriately to achieve a specific purpose . In addition, the present invention can be implemented by using various integrated circuit applications and applying an effective reversible bias. Those familiar with this technique should be able to understand these wide applications through the instructions in this publication, so they are not described in detail here. Another thing to note is that although various components have been coupled or connected with other components through appropriate means in the circuit shown, such connections and coupling methods can also be through direct connections between the components or between them. Other components or devices to connect. Eight. The present invention relates generally to a program circuit and a package circuit for a programmable microelectronic device and a method for forming the same. Figures 1 and 2 show the weightable microelectronic structures 100 and 200, the ion conductor 140, and the optional inclusion of a buffer or barrier in the program circuit and its system disclosed in the present invention. Layer or region 155 and / or 255. The junctions 100 and 200 include electrodes 120 and 130. 1

W

1

I Page 10 200301896 V. Description of the invention (7) Generally, the function of the structures 100 and 20 0 is that when a bias voltage greater than the threshold voltage VT is applied between the electrodes 120 and 130, the structure The electronic characteristics of 100 will change. The critical voltage will be further explained below. For example, according to an embodiment of the present invention, when a voltage V-VT is applied between the electrodes 120 and 130, the conductive ions in the ion conductor 140 begin to migrate. And a region is formed at or near the negative end of the electrodes 12 and 13, that is, the electrodeposit, which has higher conductivity than most other areas of the ionic conductor. When a region 160 is formed, the impedance between the electrodes 丨 20 and 丨 30 will decrease 'and other electronic characteristics may also change. In the absence of any insulating barriers, the critical voltage used to grow the I / O from one electrode to another will significantly reduce the device impedance. The critical voltage is approximately equal to the redox potential of the system (reductioon / 〇xidati〇n potential), which is usually around several hundred mV. The above insulation barrier is underneath and will be explained in detail. If the polarity of the same voltage is reversed, the area 160 will dissolve back to the ionic conductor and the device will return to a high impedance or erased state. Said, mouth = 100 and 20 0 can be used to store information ’gj This can be used in memory. For example, the structure 100 and other programmable fTr in the present invention use / replace DRAM, SRAM, PROM, EPR0M, EEPR0M, and a brother-memory-memory device, or a combination thereof. In addition, the private structure disclosed in this article can be used in applications that need to program or change the four electronic characteristics of the circuit system.

Page 11 200301896

According to various embodiments of the present invention, the volatility of the cell 100 or 200 is large, and the volume such as the thin r + Cvolatlllty can be changed by changing the amount of energy written in the wnte operatlon. 4% like time, heat or something like that. 4 +;, L, 入 %% and 士 上 Under the circumstances, the area 1 60 will be formed in. ,,, and t. The higher the amount of energy in the writing process (its voltage exceeds the critical voltage required for writing), it depends. The more you grow, the less :: body = hair is. Conversely, * fruit provides the energy phase of the cell

Quite easy to erase volatile memory. The structure of the household body and the non-volatile memory can be the same T, and the energy of the volatile / easy-to-erase memory can be lower than that of the Iti device (portable electronic device). Demand, so less power is better. Volatile and non-volatile. The hidden body can be formed on the same base and separated by

(Partitioned) or isolation, so that each part can focus on the function of volatile or non-volatile memory. Alternatively, the memory queue can be programmed to make volatile or non-volatile memory, and the characteristics of the body memory, such as volatile or non-volatile, can be changed by changing the individual memory array. Controlled by part of the energy. As shown in FIG. 1 and FIG. 2, the base 110 may contain any suitable substance. For example, the base 11 may include a semiconductor, a conductor, a semi-insulating (^ emiinsulatlve), an insulating substance, or the like, or 袓 5 of the aforementioned substance y. According to an embodiment of the invention, the base 11 contains an insulating substance ιι2

Page 12 200301896 V. Description of the invention (9)-^ and an area 1 1 4 containing a microelectronic device formed on a semiconductor substrate. The microelectronic device 1 1 4 may include a program circuit for programming the structure 1 2 0 and 102, which will be discussed in detail below. The device layers 11 2 and 11 4 3 are separated by an extra layer, for example, a layer generally used to form a circuit. Since such a programmable structure can be formed on an insulating substance or other substances, the programmable structure disclosed in the present invention is particularly applicable = for applications that focus on the size of the base, such as semiconductor substances. In addition, the advantage of overlaying the memory cells on the electronic device is that such a configuration can achieve higher data transfer rates between the memory cell array and the microelectronic device. This is because conductive plugs can be formed between the 112 and 150 layers. The electrodes 120 and 130 may also be formed of various suitable conductive materials. For example, the electrodes 120 and 130 may be formed of doped polysilicon or metal. According to an embodiment of the present invention, one of the electrodes 20 and 30 may be formed of a substance containing a metal that is soluble in the ion conductor 140A. -When sufficient bias voltage (V-VT) is applied between the electrodes, one is an oxidizable electrode and the other is a relatively inert electrode that does not dissolve during the operation of the programmable device, that is, an inert electrode. For example, the electrode 2 can be an anode during the writing process, and contains a substance that can be dissolved in the ion conductor 140, including silver. The electrode 13 can be a cathode ’in the writing process, and includes tungsten (tungsten), nickel (nickel), and 111 faces. Page 13 200301896

(molybdenum), platinum, metal silicide ... ^ At least one electrode pack (two == _

Lin: The degree. Thus, when using the structure 100 and / M1, for example, let the region 160 be quickly and freely within the ionic conductor 140 or other electronic characteristics change. In addition, the raw material is used as an electrode in a write operation to promote electrodissolution of any region 160. And when the programmable device is subjected to a sufficient voltage, the erased state can be used. 1. The programmable structure can be used in various applications and is composed of various substances. 'For example, it depends on the required writing or erasing characteristics. . A variety of programmable structure configurations and structure-forming substances have been filed in the United States on October 9, 2002. Case No. 10/268, 107, "Programmable Microelectronic Devices, Structures, and Systems and Their Applications Forming method (PROGRAMMABLE MICROELECTRONIC DEVICE, STRUCTURE, AND SYSTEM AND METHOD OF FORMING THE SAME) "is hereby incorporated herein by reference. According to an embodiment of the present invention, at least one of the electrodes 120 and 130 is made of a material suitable as an i nterconnect. For example, the electrode 130 can be used as part of an internal connection structure in a semiconductor integrated circuit. In one case of this embodiment, the electrode

200301896

The substance is practically insoluble in the ion conductor and is internally connected to the substance serving as the electrode 13G. 4 in two substances. It is suitable for miscellaneous Likou / Ί ,, knife, tungsten, (metal Slllcide), etc. White witches and metal oxide compounds The ion conductor 140 can be made of a substance that can conduct ions by applying a sufficient bias voltage. Substances suitable as the ionic conductor 14 () include high-molecular polymers. Among them: 6 sub-guides 2: semiconductor substances. In one embodiment of the present invention, -40% is composed of a chalcogenide substance. The ion conductor 140 may further include a conductive material I that has been dissolved and / or diffused. For example, the ion conductor 140 may include a solid solution that dissolves metal and / or metal ions. According to an embodiment of the present invention, the conductor 140 includes a metal and / or a metal dissolved in a sulfur-based compound glass. According to the present invention, the chalcogenide glass containing dissolved metals, AsxS, Ag, AsxSe, X-Ag, AsxTe, X-Ag, GexSe, X-Ag, A ^ Si-x-Ag, GexTe ^ x —Ag, AsxS, x—Cu, AsxSe, X-Cu,, 6 × 6l-x Cu, GexSebx-Cu, GexS, X-Cu, and GexTe, X—Ag, solid / valley fluid, where x is about 〇. · Between 1 and 0 · 5. Other sulfur-based compounds include silver, copper, combinations thereof, or similar materials. In addition, it can include a network modifier (ne t wor k mod i f i er), which can affect the mobility (m0bi 1 ity) when the sub- penetrating conductor 140. For example, metals such as osmium silver, and halogen,

200301896

5. Description of the invention (12) (hal ide), or hydrogen and other substances. The ion mobility may be enhanced to increase the structure on the erased V body 140. In addition, the ion conductor 140 may include a plurality of write speeds. This domain. For example, the ionic conductor 140 may include a first region of a region having the same impedance, which has a relatively low impedance, and a second region fixed to the oxidizable electrode, which has a relatively high impedance. A near inertia according to an embodiment of the present invention 'at least a part of the structure 1001 is formed in a via of the insulating substance 150. Forming a part of the social structure 100 in the vias of the insulating material 150 has several advantages. Among them, the formation method can make the structure relatively small, which can reach the order of lOnm. In addition, the insulating material 150 can isolate various structures 100 from other electronic components. The tidal margin material 150 contains unnecessary electrons and / or ion diffusions that can prevent the structure 100 from occurring. According to an embodiment of the present invention, the substance 5 includes silicon nitride, silicon oxynitride, and polymers such as polyimide and parylene. Or a combination of the above. Contacts 1 65 can be energized to one or more electrodes 120, 130 to facilitate the formation of electronic contacts on individual electrodes. The contacts 1 6 5 can be formed using any conductive material, preferably a metal, an alloy, or a combination containing aluminum, tungsten or copper.

Page 16 200301896

5. Description of the invention (13) Manipulating one or more electronic characteristics of a programmable structure can be used to store information. For example, the impedance of the structure can be changed from "0" or off to "丨" or on during the writing process. Similarly, the device can change "1" to "0" during the erasing process. In addition, as described in U.S. Patent Application No. 10/268, 107, the structure can have multiple programmable states and store multiple bits of information in a single structure. Writing Process FIG. 3 shows a programmable structure disclosed in the present invention, such as a current-voltage characteristic table of the structure 200. In the structure shown, the diameter of the via hole is about 4 microns (micron), the conductor 140 is about 35 nm thick, and is made of Ge3Se7-Ag (close to Ags Ges Se?). The electrode 130 is an inert electrode composed of nickel, and the electrode 120 is composed of silver. The barrier layer 255 is native nickel oxide. As shown in FIG. 3, when a voltage exceeding 1 V is applied to the structure 200 in the off state, the current starts to increase. However, when the writing process is performed, that is, when an electrodeposition is generated, the impedance of the conductor 14 will be greatly reduced to 200 Ω, as shown in the curve 3 2 0 in FIG. 3. As described above, when the electrode 130 is connected to the negative end of a power supply. This is compared to the electrode 120, where a conductive region is formed near the electrode 130 and grows toward the electrode 120. The effective threshold voltage, that is, the voltage that can grow a conductive region and penetrate the barrier layer 255 to make the electrodes 120 and 130 conductive, is quite south. In particular, the voltage V — VT must be applied to the structure 2 0, so that electrons can

200301896

5. Description of the invention (14) to form a conductive region. Then, the conducting conductor 140 and at least one barrier layer 2 5 5 formed by penetrating or leaking through the barrier layer 2 5 5 composed of the insulating layer are passed through the barrier layer 2 5 5. In another embodiment of the invention, if no insulation layer exists, the voltage required to start the writing process will be quite low. There is no 5 relationship between the ion V body 140 and any of the electrodes 120 or 130. As described above for the α-bounded layer, to change the relative volatility of the memory structure in the present invention, different energy can be applied during the writing process. For example, applying a high current pulse of several hundred ^^ to the graph] and the structure of Fig. 2 for about several hundred ns can form a fairly non-volatile memory cell. In addition, the same current can also be applied In the same or similar: the structure of the twelve right time is short, such as several ns, can form a relatively volatile memory structure. In any case, the memory of the present invention can be programmed at high speed, even volatile memory The body is also more non-volatile than traditional pupae. For example, the volatile memory operates at a speed similar to that of the dragon, but only needs to be updated once a few hours. The reading process requires δ to buy § memory cells State, such as "0" or "1" without significantly interfering with the original state. "Forward or reverse bias can be applied, and the magnitude is lower than the threshold voltage for electrodeposition, as shown in Figure 3. 200200301896 V. Description of the invention (15) The structure needs about 1.4V. Or, a current 'that is lower than or equal to the minimum programmed current will produce the highest on-resistance value. The read operation process with a current limit of about 1 m A is shown in FIG. In this case, the voltage will rise from 0 to 2 V and the current will rise to the current limit when the voltage is from 0 to 0.2 V. It means that a low impedance (ohm / linear voltage-current) conduction state is reached . Another method of reading without disturbing the state of the memory is to apply the pulse 'for a relatively short time. The voltage will be lower than the critical voltage required by the electrochemical deposition method, so as not to generate a sensible Faradaic cuirirent ilw, which means that almost all the current will run to polarizing / charging ) Device without forming electrodeposition. According to different embodiments of the present invention, a circuit with a programmable structure includes a temperature compensation device to offset the effect of temperature changes on the performance of the programmable device. . An example of a temperature compensation circuit includes a programmable structure with a known erase state. In this example, during the reading process, a gradually increasing voltage is applied to the programmable structure having an unknown state and the programmable structure having a known erasing state at the same time. If the unknown structure is in the writing state, then this non- = structure will be turned on before the known erasing device is turned on. If the unknown structure is in the erased state, the two devices will be turned on in about the same time. In addition, the temperature compensation circuit can be used to make a comparison voltage or current ', the voltage or current generated during the reading process and the programmable structure of unknown state = compare 0

Page 19 V. Description of the invention (16;) Erase process Programmable structures such as structure 200 can be erased by biasing the dome. The reverse voltage applied during the writing process of the applied bias voltage is the same or larger σ _ 4 t, which is used to form the electrodeposited electrode, is larger, but the polarity is opposite. Poor Example 'A sufficient amount of erasure suppression 2 = Invented-2 2 on. The length of time is related to the application of == application during the writing process, the structure is 1ms, and the structure 2 is returned here, generally less (Ω). When the programmable barrier layer with a secondary and secondary impedance value exceeding m 10,000 ohms is used, the critical electricity of the critical electric dust state required for writing by the conductor 140 and the electrode 120 with the clamp ^ 4 layer is often much smaller than the wall layer Or make the barrier layer collapse. . " The unremoved process does not need to let the electron penetrate the barrier. The control operation can be done by adding a conductive substance such as silver to the ionized structure. Due to application requirements, the voltage can be controlled from the parameter subconductor on the reverse bias electrode. The reduction of the metal from the dissolved ionic conductor. For example, it can be used to oxidize the time of the voltage. The excess metal can be applied to the solution by applying a potential. The voltage of the conductive material exceeds the concentration of the material to promote reduction. Metal ion. In addition to the bias voltage, there can be a suitable micro-concentration of the conductive material. For example, the in-situ (reduction solution) is taken out. Conversely, as long as it is applied, if the reverse bias voltage is applied to provide more or increase wipe. We can use a bias voltage that can be applied to the negative voltage of the process to exceed), you can change the quality of the electrode from the oxidation voltage of the electrode is higher than the special device and apply a positive bias. In addition, extend the effect and remove the inertia to automatically control the 200301896.

V. Description of the Invention (17) In the combined embodiment of making conductive materials, for example, the above-mentioned threshold voltage of Λ 4 ^ J can be adjusted by programming and private sequence to be controlled. Control read or write voltage. Generally speaking: clothing f: make it meet the user's desire substance in ionic conductor and / bite: any; said that the critical voltage has a relationship with the factors of conductivity. The amount in any of the barrier layers, among others, is shown in Figure 4 as a part of the integrated circuit 402, which includes a programmable 400 to provide additional isolation of electronic components. According to an embodiment of the present invention, the structure 400 includes electrodes 42o and 43 (), an ion conductor 440, a contact 460, and an amorphous two-body dimer between the contact 46o and the electrode 42o. " Then ... body. Programmable knots;, order /, rows can be made into a two-density configuration, to provide the maximum storage capacity of the memory circuit =. Generally speaking, the maximum storage latency of a 'memory device' is limited to the size and complexity of the row / column decoder circuit (C1 ^ ClLltry). However, the programmable structure storage stack can be overlaid on the integrated circuit so that the structure 400 will not take up the space of the base. 'The entire semiconductor chip area can be used for row / column decoding, test amplifiers and data management Power 4 (not shown) function. In this way, the programmable structure can reach ⑽shan per square centimeter ... Secondly, the structure of the real structure can be regarded as an additional technology, and the function and capacity are added to the technology of the circuit of 0N- 脰 integrated circuit.

Page 21 20031896 V. Description of the invention (18) ^ Figure 5 shows a part of a memory device, in which the structure 400 has an independent p-η junction diode 4 70, which is located in the bit of the memory circuit. The intersection of line (b 土 七 line) 510 and word line 520. FIG. 6 shows another isolation method, which uses a transistor 6 1 0 between an electrode and a programmable contact (con tact). The programmable structure is in bit line 610 and characters of the memory device. Intersection of line 620. Fig. 7 shows an exemplary circuit 700 for changing the electronic characteristics of a microelectronic device such as a programmable device as shown in Figs. Generally, the circuit 700 can be used to provide a sufficient, reversible voltage drop on a programmable structure to perform the write and erase functions described above. The circuit 700 includes a first input 702 coupled to a first region 704 of a programmable device 706, and a second input 710 coupled to a first switch 712 and a second switch 7 1 4 '. The voltage source 71 6 is coupled to the switch 71 4. The ground 71 8 is connected to the switch 712. In this embodiment, the second region 708 of the device 706 is coupled to the first switch and the first switch. According to an exemplary case of this embodiment, the switches 712 and 714 form a complementary metal-oxide-semiconductor (CMOS) device. The switch 714 is a p-channei transistor, and the switch 712 is a n-channel semiconductor. The output of the CMOS device 72 is coupled to the second area 708 of the programmable device 706. In this example, input 71 is coupled to the gate of the p-channel transistor and the n-channel transistor. Switches 71 2 and 714 form part of a CMOS device that allows the power consumed by read and write operations

Page 22 200301896 V. Description of the invention (19) is quite low, while making the circuit 700 easy to manufacture. In another case of this embodiment. The P-channel transistor 7 1 4 can be replaced with a passive load, such as a resistor (polycrystalline silicon resistor) or an active load (such as an M0S transistor in depletion mode). Similarly, as described above, the CMOS device may be formed in a base, such as the base 110, and the programmable device 706 may be covered on the base. In operation, when the programmable device 706 is in a non-writing or erasing state and has a low voltage, for example, a voltage of 0V is applied to the inputs 702 and 71, the inert electrode (area of the device 706) 708) compared to the soluble electrode (area 704) is at a positive bias. In this state, no writing will occur. When there is a positive voltage, a positive voltage close to 5V (5V-near + V) is applied to the inputs 70 2 and 710, and the voltage in the area 708 will drop to about 0V. As long as the positive voltage at the input 702 is large enough to allow the voltage drop to exceed the write threshold voltage, approximately 200 to 300 mV, the circuit 700 will perform the write function described above for the device 706. If the device 706 is to be erased, a low voltage of about 0v can be applied to the inputs 702 and 710, so that the area 708 of the device 706 is positively biased compared to the area 704 of the device 706. Alternatively, voltages of opposite polarity can be applied to inputs 702 and 710 to achieve the write and erase functions described above. FIG. 8 shows a circuit 800 in another embodiment of the present invention, which is used to program a programmable structure. The circuit 800 is similar to the circuit 700 except that the circuit 800 includes only a single input 802, and additionally includes a selection input 800 and a switch 806 for activating a read or write function.

200301896 V. Description of the invention (20) In the operation of the circuit 800, an appropriate bias voltage is applied, for example, a positive voltage of 丄 to ^ (1/0 5V ~ near + v) is input to 804 to turn on the switch. Performs writing or erasing functions. Tongguan 806 is a MOS transistor in the illustrated embodiment of the present invention. Once started, a high voltage is applied, for example, a positive voltage of 1 to 5V (1 t0 5V — near + v) is applied to the input 802 to perform the write function. When a low voltage is applied, a voltage of about OV is applied to the input 802 to perform the erasing function. During the writing process, the impedance of the device 706 decreases. This phenomenon can be used to limit the stylization effect, as the voltage at input 802 will be pulled low as the stylization process proceeds. FIG. 9 shows another circuit 900 of the present invention. The circuit 900 is similar to the circuit except that the programmable structure 706 is in the opposite direction with respect to the input 802. In this example, applying a low voltage to input 802 will cause a write operation, while applying a high voltage to input 802 will cause an erase operation. Figure ο is not a circuit including a plurality of programmable devices 1002 to 1006. The circuit 100 0 may form part of a memory array, such as part of a certain row of the array. The circuit 1 0 0 0 is similar to the circuit 8 0, except that the circuit 1 0 0 0 includes a plurality of selection inputs 1 08 to 1012, a plurality of programmable devices, and a plurality of selection switches, for example, a S transistor 1 0 u to 101 8. According to an embodiment of the present invention, a single programmable device can perform a read or write operation by turning on a relevant selection switch.

Page 24 200301896 V. Description of the invention (21) Although the present invention has been described in conjunction with the accompanying drawings, it should be noted that the present invention is not limited to the specific form shown here. For example, although a MOS transistor is used as a switch in a program circuit, the present invention is not limited thereto. The circuit used in the present invention can be added with a bipolar transistor or a similar element to form a switch in the figure. Those skilled in the art can make various other amendments, changes or enhancements to the design and arrangement of methods and devices without departing from the spirit and scope of the scope of the patent application contained in the present invention, according to the description contained herein. .

Page 25, 20031896 Brief description of the drawings V. [Simplified description of the drawings] Further explanation of the present invention will be expounded one by one in the scope of the patent application, and the related figures are similar to those in the reference numbers 1, 2 and 4 are cross-sectional diagrams formed on the surface of a base in the present invention; Figure 3 is a current-voltage diagram with a long structure, which is used to illustrate the invention. Current and voltage characteristics; Ding's clothing and 6 parts of the memory device in one embodiment of the present invention; Figures 7 to 10 are program circuits disclosed in the present invention. : Dead artists can understand that the components in the figure are shown in simple field and are determined according to the actual size ratio. By way of example-the size of certain elements may be w 4 & "The father is expensive to help understand the symbols of the components of the present invention 110 base 11 4 area 1 3 0, 4 3 0 electrode 1 5 0 insulating material 1 6 0 area 402 integrated circuit I 0 0, 2 0 0 , 4 0 0 Structure II 2 Insulating material 1 2 0, 4 2 0 Electrodes 140, 440 Ion conductors 1 5 5, 2 5 5 Area 1 6 5 contact 200301896 Simple illustration of the diagram 4 6 0 contact 5 1 0 bit Line 6 1 0 transistor 6 2 0 character line 702 first input 706 programmable device 710 second input 7 1 4 second switch 7 1 8 ground 800 circuit 804 select input 9 0 0 circuit

1 0 0 2, 1 0 0 4, 1 0 0 6 Programmable 1 008, 1010, 1012 Select 1014, 1016, 1018 MOS 4 7 0 Diode 5 2 0 Word line 6 1 5 Bit line 7 0 0 Demonstration circuit 704 first region 708 second region 7 1 2 first switch 7 1 6 voltage source 720 output 802 single input 806 switch 1 0 0 0 circuit type device input transistor

Page 27

Claims (1)

200301896 VI. Scope of patent application 1. A circuit for programming a microelectronic memory device, the circuit includes a first input coupled to a first region of the memory device; a first Two inputs are coupled to a first switch and a second switch, the first switch is dissipated to a voltage source, and the second switch is coupled to ground; and a second input is coupled to the A first switch and a second switch, wherein the circuit is used to provide a first bias and a second bias to the memory device, wherein the polarity of the first bias and the second bias The polarity is opposite. 2. The circuit according to item 1 of the scope of patent application, wherein the first switch and the second switch form a CMOS device. 3. The circuit according to item 2 of the scope of the patent application, wherein a round out of the CMOS device is coupled to a second region of the memory device. 4. The circuit according to item 1 of the scope of patent application, wherein the memory device includes a first electrode, a second electrode, and an ion conductor interposed between the first electrode and the second electrode. ). 5. The circuit as described in item 4 of the scope of the patent application, wherein the ionic conductor includes s-sulphur compound (c h a 1 c 0 g e n i d e) substance. Page 28, 20031896 6. Application for Patent Scope 6 · — A circuit for reversibly changing the electronic characteristics of a microelectronic device, the circuit comprising: a write input coupled to one of the microelectronic devices A first region; a select switch is coupled between the write input and the first region of the Yanhai microelectronic device; a first switch is coupled to the write input and a voltage source; and a second A switch is coupled to the write input and ground, wherein the first switch and the second switch are coupled to a second region of the microelectronic device, and wherein the circuit is configured to provide a first bias voltage ( bias) and a second bias voltage to the microelectronic device, wherein the polarity of the first bias voltage is opposite to the polarity of the second bias voltage. 7. The circuit according to item 7 of the scope of patent application, wherein the first The switch and the first switch form a C M 0 S device. 8 · The circuit described in item 7 of the scope of patent application, wherein the selection switch includes a transistor. 9 · As described in item 6 of the scope of patent application Of Road, wherein the microelectronic device comprises an ion conductive material, selected from the following group: glass (Glass), a semiconductor material (semiC〇nductor Material's), sulfur-based compound (Chalcogenide) material and polymer (Polymer) 200301896 VI. Patent Application Substances. 10. The circuit according to item 6 of the scope of patent application, wherein the first region contains a soluble electrode substance. 11. The circuit according to item 6 of the scope of patent application, wherein the second region contains an inert electrode substance. 1 2. The circuit according to item 6 of the scope of patent application, wherein the first region contains an inert electrode substance. 1 3. The circuit according to item 6 of the scope of patent application, wherein the second region contains a soluble electrode substance. 1 4. The circuit according to item 6 of the scope of patent application, further comprising a plurality of microelectronic devices coupled to the first switch and the second switch. 15. The circuit as described in item 14 of the patent application scope further comprising a plurality of select switches coupled to the write input. 1 6. —A circuit for programming a programmable structure, the circuit includes ... a write input to a first region of the structure; a CMOS transistor, one of the CMOS transistors Output is coupled to the structure Page 30, 20031896 VI. A second area of the patent application and the write input; and a select transistor fits between the write input and the programmable structure, wherein the programmable structure includes An ionic conductor and a conductive material distributed in the ionic conductor ° 1 7. The circuit described in item 16 of the scope of patent application, further comprising a plurality of programmable structures coupled to the output of the CMOS transistor. 1 8. The circuit as described in item 16 of the patent application scope, further comprising a plurality of select transistors coupled to the write input. 19. The circuit according to item 16 of the scope of patent application, wherein the selection transistor system is a MOS transistor. Page 31