TW200301668A - Method of forming electroluminescent devices - Google Patents
Method of forming electroluminescent devices Download PDFInfo
- Publication number
- TW200301668A TW200301668A TW91134052A TW91134052A TW200301668A TW 200301668 A TW200301668 A TW 200301668A TW 91134052 A TW91134052 A TW 91134052A TW 91134052 A TW91134052 A TW 91134052A TW 200301668 A TW200301668 A TW 200301668A
- Authority
- TW
- Taiwan
- Prior art keywords
- metal
- rare earth
- electroluminescent
- layer
- electroluminescent device
- Prior art date
Links
- 238000000034 method Methods 0.000 title description 9
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 41
- 150000002910 rare earth metals Chemical class 0.000 claims abstract description 28
- 150000001875 compounds Chemical class 0.000 claims abstract description 24
- 229910052747 lanthanoid Inorganic materials 0.000 claims abstract description 13
- 150000002602 lanthanoids Chemical class 0.000 claims abstract description 13
- 230000008021 deposition Effects 0.000 claims abstract description 12
- 229910052768 actinide Inorganic materials 0.000 claims abstract description 8
- 150000001255 actinides Chemical class 0.000 claims abstract description 8
- 239000000203 mixture Substances 0.000 claims abstract description 3
- 239000000463 material Substances 0.000 claims description 55
- 229910052751 metal Inorganic materials 0.000 claims description 46
- 239000002184 metal Substances 0.000 claims description 46
- -1 planer Chemical compound 0.000 claims description 24
- 239000003446 ligand Substances 0.000 claims description 21
- 229920000642 polymer Polymers 0.000 claims description 18
- 229920000767 polyaniline Polymers 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052723 transition metal Inorganic materials 0.000 claims description 11
- 150000003624 transition metals Chemical class 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- 230000005525 hole transport Effects 0.000 claims description 10
- 150000002739 metals Chemical class 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 238000005401 electroluminescence Methods 0.000 claims description 7
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Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
Description
200301668 玖、發明說明 :. - : --:" 【發明所屬之技術領域】 本發明關於電致發光裝置及顯示器。 【先前技術】 在被電流通過時能發出光線的材料係周知的且用於廣 範圍的顯示器應用中。液晶裝置及以無機半導體系統爲基 礎的裝置係被廣用著,然而這些具有缺點爲高能量消耗、 高製造成本、低量子效率及不能製造平板顯示器。 有機發光聚合物係不可能獲得純顏色,它們的製造係 昂貴的且效率比較低。 專利申請案WO98/58037敘述一範圍的鑭系錯合物, 其可用於電致發光裝置中,而且具有改良的特性及給予較 佳的結果。專利申請案 PCT/GB98/01773、PCT/GB99/03619 、PCT/GB99/04030、PCT/GB99/04024、PCT/GB99/04028、 PCT/GBOO/0〇268敘述使用稀土族螯合物的電致發光錯合物 、結構及裝置。 所揭示的用於將電致發光層沈積在前一層上以構成電 致發光裝置的方法可藉由直接蒸發一種材料在有機溶劑中 的溶液。所用的溶劑將視材料而定,但是氯化烴如二氯甲 烷及正甲基毗咯啶酮、二甲亞硼、四氫呋喃、二甲基甲醯 胺等係適合於許多情況的。 或者,可從溶液藉由旋塗或從固態藉由真空沈積,例 如濺射,以沈積材料。 熔融沈積通常不能使用有機聚合物電致發光化合物, 200301668 因爲有機聚合物在所要求的溫度條件下係不穩定的而且不 能與醌酸鋁一起使用,然而我們已經發現當電致發光材料 爲有機金屬化合物時,則可以使用熔融沈積技術。 【發明內容】 本發明提供一種電致發光裝置,其依序包括⑴陽極, (ii)通式(La)nM之電致發光化合物層,其中μ係一或多種 稀土元素、鑭系元素或锕系元素,或非稀土金屬或一由稀 土元素及/或非稀土金屬所構成的混合物,La係一或多種有 機錯合物,且該有機錯合物可爲相同或不同,而η係Μ的 價態,及(iii)陰極,其中電致發光化合物係藉由熔融沈積而 沈積在前一層上。 【實施方式】 前一層係意味在基材上形成的層,其上沈積有電致發 光層。 如下述,可有其它層介於陽極和電致發光層之間,如 電洞傳輸材料層和緩衝層,而且可有其它層介於陰極和電 致發光層之間,如電子傳輸材料層和塗層以調整陰極的功 函數。 本發明中可用的電致發光化合物係爲通式(La)nM,其 中Μ係稀土元素、鑭系元素或锕系元素,La係有機錯合物 ,而η係Μ的價態。 本發明中可用的其它電致發光化合物係爲下式 本發明中可用的較佳電致發光化合物係爲下式 200301668 (Lo〇n> M —Lp 其中La和Lp係有機配位體,M係稀土元素、過渡金 屬、鑭系元素或銅系元素,且η係金屬Μ的價態。配位體200301668 发明 、 Explanation of the invention:.-:-: &Quot; [Technical Field to which the Invention belongs] The present invention relates to an electroluminescent device and a display. [Prior Art] Materials that emit light when an electric current is passed are well known and used in a wide range of display applications. Liquid crystal devices and devices based on inorganic semiconductor systems are widely used, but these have disadvantages such as high energy consumption, high manufacturing cost, low quantum efficiency, and inability to manufacture flat panel displays. Organic light-emitting polymers cannot obtain pure colors, and their manufacturing systems are expensive and relatively inefficient. Patent application WO98 / 58037 describes a range of lanthanide complexes which can be used in electroluminescent devices, and which have improved characteristics and give better results. Patent applications PCT / GB98 / 01773, PCT / GB99 / 03619, PCT / GB99 / 04030, PCT / GB99 / 04024, PCT / GB99 / 04028, PCT / GBOO / 0〇268 describe electrochemistry using rare earth chelates Luminescent complex, structure and device. The disclosed method for depositing an electroluminescent layer on a previous layer to constitute an electroluminescent device can be achieved by directly evaporating a solution of a material in an organic solvent. The solvent used will depend on the material, but chlorinated hydrocarbons such as dichloromethane and n-methylpyrrolidone, dimethylboron, tetrahydrofuran, dimethylformamide and the like are suitable for many situations. Alternatively, the material can be deposited from a solution by spin coating or from a solid state by vacuum deposition, such as sputtering. Fused deposition usually cannot use organic polymer electroluminescent compounds. 200301668 Because organic polymers are unstable under the required temperature conditions and cannot be used with aluminum quinone, however, we have found that when the electroluminescent material is an organic metal For compounds, fused deposition techniques can be used. [Summary of the Invention] The present invention provides an electroluminescence device, which sequentially includes a rhenium anode, (ii) an electroluminescent compound layer of the general formula (La) nM, wherein μ is one or more rare earth elements, lanthanide elements, or europium Elements, or non-rare-earth metals or a mixture of rare-earth elements and / or non-rare-earth metals, La is one or more organic complexes, and the organic complexes may be the same or different. Valence, and (iii) the cathode, wherein the electroluminescent compound is deposited on the previous layer by fused deposition. [Embodiment] The previous layer means a layer formed on a substrate on which an electroluminescent layer is deposited. As described below, there may be other layers between the anode and the electroluminescent layer, such as a hole transport material layer and a buffer layer, and there may be other layers between the cathode and the electroluminescent layer, such as an electron transport material layer and Coating to adjust the work function of the cathode. The electroluminescent compound usable in the present invention is a general formula (La) nM, in which M is a rare earth element, a lanthanide or an actinide, a La-based organic complex, and η is a valence state of M. Other electroluminescent compounds that can be used in the present invention are of the following formula. A preferred electroluminescent compound that can be used in the present invention is the following formula 200301668 (Loon > M-Lp where La and Lp are organic ligands and M is Rare earth element, transition metal, lanthanide or copper element, and valence state of η metal M. Ligand
La可爲相同或不同,而且可有許多相同或不同的配位體Lp 〇 例如(LiXLJO^KL.OMap),其中Μ係稀土元素、過渡 金屬、鑭系元素或锕系元素,(Loa^a^KL...)係相同或不 同的有機錯合物,而(Lp)係中性配位體。配位體 (LDO^KLsXL..)的總電荷係等於金屬Μ的價態。若有對應 於Μ之III價態的三個基La,則錯合物具有式 (LDaja^Map)且不同的基αοα^κι^)可爲相同或相異。La may be the same or different, and may have many identical or different ligands Lp. For example, (LiXLJO ^ KL.OMap), where M is a rare earth element, a transition metal, a lanthanide or an actinide, (Loa ^ a ^ KL ...) are the same or different organic complexes, and (Lp) is a neutral ligand. The total charge of the ligand (LDO ^ KLsXL ..) is equal to the valence state of the metal M. If there are three radicals La corresponding to the III valence state of M, the complex has the formula (LDaja ^ Map) and the different radicals αοα ^ κι ^) may be the same or different.
Lp可爲單齒、二齒或多齒的,且可有一或多個配位體Lp can be monodentate, bidentate, or multidentate, and can have one or more ligands
Lp 〇 較宜地,Μ爲具有未經塡滿的內殼之金屬離子,且較 佳的金屬係選自於 Sm(III)、Eu(II)、Eu(III)、Tb(III)、 Dy(III)、Yb(III)、Lu(III)、Gd(III)、Gd(III)U(III)、Tm(III)、 Ce(III)、Pr(III)、Nd(III)、Pm(III)、Dy(III)、Ho(III)、Er(III) ,及更佳 Eu(III)、Tb(III)、Dy(III)、Gd(III)。 本發明中可用的其它電致發光化合物係爲通式 (乙〇〇^1]\/12者,其中%係與上述Μ相同,M2係非稀土金屬 ,La係如上,而η係%和M2的組合價態。該錯合物可亦 包括一或多個中性配位體Lp,俾錯合物具有通式 (LoOnMiMJLp),其中Lp係如上。金屬M2可爲任何不是稀 土元素、過渡金屬、鑭系元素或銅系元素的金屬,可用的 200301668 金屬之例子包括鋰、鈉、鉀、铷、鉋、鈹、鎂、鈣、緦、 鋇、銅(I)、銅(II)、銀、金、鋅、I鬲、硼、鋁、鎵、銦、鍺 、錫(II)、錫(IV)、鍊(II)、銻(iv)、給(II)、給(iv),在不同 價態的過渡金屬之第一、第二和第三族金屬,例如錳、鐵 、釘、餓、鈷、鎳、鈀(II)、鈀(IV)、鈾(11)、鉑(IV)、鎘、 鉻、鈦、釩、銷、鉅、鉬、铑、銥、鈦、鈮、銃、釔。 例如(LiKLJO^KL.OMap),其中Μ係稀土元素、過渡 金屬、鑭系元素或銅系元素,而(Ll)(L2)(L3)(L··.)及(Lp)係相 同或不同的有機錯合物。 本發明中可用的其它有機金屬錯合物係二核、三核及 多核有機金屬錯合物,例如爲下式者 (LirOxM】 —M2(Ln)y,例如 (Lm )xMi^j)M“Ln)y 其中L係橋連配位體,Mi係稀土金屬,而^爲吣或 非稀土金屬,Lm和Ln爲相同或不同的如上定義的有機配 位體La,X係虬的價態,y係^的價態。 在這些錯合物中,可有金屬對金屬的鍵結,或於M!和 M2間可有一或多個橋連配位體,而基Lm和Ln可爲相同或 不同。 三核的意思爲有三個稀土金屬經由金屬對金屬的鍵結 而連接,即下式 (Lm)xM 1 — M3(Ln )y —m2(lp )2 200301668Lp 〇 Preferably, M is a metal ion with an unfilled inner shell, and the preferred metal system is selected from Sm (III), Eu (II), Eu (III), Tb (III), Dy (III), Yb (III), Lu (III), Gd (III), Gd (III) U (III), Tm (III), Ce (III), Pr (III), Nd (III), Pm ( III), Dy (III), Ho (III), Er (III), and more preferably Eu (III), Tb (III), Dy (III), Gd (III). Other electroluminescent compounds that can be used in the present invention are those of the general formula (Ethylene Glycol). Among them,% is the same as the above M, M2 is a non-rare earth metal, La is as above, and η is% and M2. The combined valence state. The complex may also include one or more neutral ligands Lp. The europium complex has the general formula (LoOnMiMJLp), where Lp is as above. The metal M2 may be any non-rare earth element, transition metal , Lanthanide or copper-based metals, examples of useful 200301668 metals include lithium, sodium, potassium, thallium, planer, beryllium, magnesium, calcium, thallium, barium, copper (I), copper (II), silver, Gold, zinc, ytterbium, boron, aluminum, gallium, indium, germanium, tin (II), tin (IV), chain (II), antimony (iv), give (II), give (iv), at different prices State transition metals of the first, second, and third group metals, such as manganese, iron, nail, starvation, cobalt, nickel, palladium (II), palladium (IV), uranium (11), platinum (IV), cadmium , Chromium, titanium, vanadium, pin, giant, molybdenum, rhodium, iridium, titanium, niobium, scandium, yttrium. For example (LiKLJO ^ KL.OMap), where M is a rare earth element, a transition metal, a lanthanide or a copper element , And (Ll) ( L2) (L3) (L · ·.) And (Lp) are the same or different organic complexes. Other organometallic complexes that can be used in the present invention are dinuclear, trinuclear and multinuclear organometallic complexes, For example, the following formula is (LirOxM)-M2 (Ln) y, such as (Lm) xMi ^ j) M "Ln) y, where L is a bridging ligand, Mi is a rare earth metal, and ^ is rhenium or a non-rare metal , Lm and Ln are the same or different organic ligands La as defined above, and the valence state of X is 虬 and the valence state of y. In these complexes, there may be metal-to-metal bonding, or There may be one or more bridged ligands between M! And M2, and the groups Lm and Ln may be the same or different. Trinuclear means that three rare earth metals are connected via a metal-to-metal bond, that is, the following formula ( Lm) xM 1 — M3 (Ln) y —m2 (lp) 2 200301668
(Lm)xM !- M3(Ln(Lm) xM!-M3 (Ln
(LP)Z 不同的稀土金屬,而 X係Μι的價態,y係 其中M!、M 2和M 3係相同变 Lm、Ln和Lp係有機配位體La, Μ:的價態,2係A的價態,“可相同或不同於1^1和 Ln 〇 可經由金屬對金屬之鍵結及/或經由中間的橋連原 子、配位體或分子團將稀土金屬與非稀土金屬連接在 一起。 例如,金屬可由橋連配位體所連接,例如 (Lm)xM ! M3(Ln)y M2(Lp)z(LP) Z different rare earth metals, while X is the valence state of Mm, y is the same! M !, M 2 and M 3 are the same, and Lm, Ln and Lp are the organic ligands La, M: the valence state, 2 Is the valence state of A, "may be the same or different from 1 ^ 1 and Ln 〇 rare earth metals and non-rare earth metals may be connected via metal-to-metal bonds and / or via intermediate bridge atoms, ligands or molecular groups For example, metals can be linked by bridging ligands, such as (Lm) xM! M3 (Ln) y M2 (Lp) z
其中L係橋連配位體。 多核係意味有超過二個金屬被金屬對金屬之鍵結及 200301668 /或經由中間的配位體所連接 Μ !—Μ2 — Μ3—Μ 4 或Among them, L is a bridging ligand. Multicore means that more than two metals are metal-to-metal bonded and 200301668 / or connected via an intermediate ligand Μ! —Μ2 — Μ3—Μ 4 or
Mj—Μ2 一Μ4 一Μ3 或 m2Mj—Μ2—M4—M3 or m2
Ml" M3---NM4 或 ^Ln M1 M2 M4 M3 NX 乂 其中Mi、M2、M3和M4係稀土金屬’而L係橋連配位 體。 金屬]\42可爲任何不是稀土元素、過渡金屬、鑭系元素 或锕系元素的金屬,可用的金屬之例子包括鋰、鈉、鉀、 铷、鉋 '鈹、鎂、鈣、緦、鋇、銅、銀、金、鋅、鎘、硼 、鋁、鎵、銦、鍺、錫、銻、鉛,及過渡金屬之第一、第 二和第三族金屬,例如錳、鐵、釕、餓、鈷、鎳、鈀、鉑 、鎘、鉻、鈦、釩、锆、鉅、鉬、铑、銥、鈦、鈮、銃、 釔等。 較宜地,La係選自於β-二酮,如下式者Ml " M3 --- NM4 or ^ Ln M1 M2 M4 M3 NX 乂 where Mi, M2, M3 and M4 are rare earth metals' and L is a bridging ligand. [Metal] \ 42 may be any metal that is not a rare earth element, transition metal, lanthanide or actinide. Examples of useful metals include lithium, sodium, potassium, thallium, planed beryllium, magnesium, calcium, thallium, barium, Copper, silver, gold, zinc, cadmium, boron, aluminum, gallium, indium, germanium, tin, antimony, lead, and first, second and third group metals of transition metals, such as manganese, iron, ruthenium, hungry, Cobalt, nickel, palladium, platinum, cadmium, chromium, titanium, vanadium, zirconium, giant, molybdenum, rhodium, iridium, titanium, niobium, hafnium, yttrium, etc. Preferably, La is selected from β-diketone, which is
(I) (II) (III) 200301668 一 〃、中Rl、I和R3可爲相同或不同且係選自於氫, 取代和未經取代的烴基,如經取代和未經取代的 脂族基,經取代和未經取代的芳族、雜環和多環結構 ,碳氟化物,如三氟甲基,鹵素,如氟,或硫苯基; R!、R2和R3亦可形成經取代或未經取代的稠合芳族、 雜環和多環結構,且可與單體如苯乙烯共聚合。χ係 Se ' S或〇’ γ可爲氫、經取代或未經取代的烴基,如 經取代和未經取代的芳族、雜環和多環結構,氟,碳 氟化物,如三氟甲基,鹵素,如氟或硫苯基或腈。 心及/或R2及/或R3的例子包括脂族、芳族及雜環烷氧 基、芳氧基及羧基,經取代和未經取代的苯基、氟苯基、 聯苯基、菲、憩、萘基及苐基烷基如第三丁基,雜環基如 咔唑。 某些不同基La亦可爲相同或不同的帶電荷基,如 羧酸酯基,俾基L!可如上定義且基L2、L3…可爲帶電 荷的基如 R-ci:° (IV) 其中R係如上定義的I,或基Li、L2可如上定義,且 L3·.·等係其它帶電荷的基。(I) (II) (III) 200301668 I, R1, I and R3 may be the same or different and are selected from hydrogen, substituted and unsubstituted hydrocarbon groups, such as substituted and unsubstituted aliphatic groups , Substituted and unsubstituted aromatic, heterocyclic and polycyclic structures, fluorocarbons, such as trifluoromethyl, halogen, such as fluorine, or thiophenyl; R !, R2 and R3 can also form substituted or Unsubstituted fused aromatic, heterocyclic and polycyclic structures and copolymerizable with monomers such as styrene. χ series Se'S or O 'γ can be hydrogen, substituted or unsubstituted hydrocarbon groups, such as substituted and unsubstituted aromatic, heterocyclic and polycyclic structures, fluorine, fluorocarbons, such as trifluoromethyl Radical, halogen, such as fluorine or thiophenyl or nitrile. Examples of oxo and / or R2 and / or R3 include aliphatic, aromatic and heterocycloalkoxy, aryloxy and carboxyl, substituted and unsubstituted phenyl, fluorophenyl, biphenyl, phenanthrene, Rhen, naphthyl and fluorenylalkyl such as tertiary butyl, and heterocyclyl such as carbazole. Some different groups La can also be the same or different charged groups, such as carboxylate groups, fluorenyl groups L! Can be defined as above and the groups L2, L3 ... can be charged groups such as R-ci: ° (IV) Wherein R is I as defined above, or the groups Li and L2 may be defined as above, and L3 ... etc. are other charged groups.
Ri、1^2和R3亦可爲 11 200301668Ri, 1 ^ 2 and R3 can also be 11 200301668
其中X係〇、S、Se或NH。Wherein X is 0, S, Se or NH.
較佳的成分h係三氟甲基CF3,而該二酮的例子係苯 甲醯三氟丙酮、對氯苯甲醯三氟丙酮、對溴三氟丙酮、對 苯基三氟丙酮、1-萘甲醯基三氟丙酮、2-萘甲醯基三氟丙酮 、2-菲醯基三氟丙酮、3-菲醯基三氟丙酮、9-憩醯基三氟丙 酮三氟丙酮、肉桂醯基三氟丙酮及2-噻吩甲醯基三氟丙酮。 不同的基La可爲相同或不同的下式配位體The preferred component h is trifluoromethyl CF3, and examples of the diketone are benzamidine trifluoroacetone, p-chlorobenzidine trifluoroacetone, p-bromotrifluoroacetone, p-phenyltrifluoroacetone, 1- Naphthyridine trifluoroacetone, 2-naphthyridine trifluoroacetone, 2-phenanthrenetrifluoroacetone, 3-phenanthrenetrifluoroacetone, 9-cyclyltrifluoroacetone trifluoroacetone, cinnamon tincture Trifluoroacetone and 2-thienylmethyltrifluoroacetone. Different radicals La can be the same or different ligands of the formula
(VI) 其中X係〇、S或Se,而Ri、R2和R3係如上。 不同的基La可爲相同或不同的醌酸酯衍生物,如(VI) wherein X is 0, S or Se, and Ri, R2 and R3 are as described above. Different radicals La can be the same or different quinone ester derivatives, such as
(VII)(VII)
(VIII) 或 12 200301668 其中R係烴基、脂族、芳族或雜環羧基、芳氧基、羥 基或烷氧基,例如8羥基醌酸酯衍生物或(VIII) or 12 200301668 in which R is a hydrocarbon group, an aliphatic, an aromatic or a heterocyclic carboxyl group, an aryloxy group, a hydroxy group or an alkoxy group, such as an 8-hydroxyquinone ester derivative or
RiRi
(IX) r2(IX) r2
οο (X) 其中Ri、心和R3係如上或係Η或F,例如Ri和1係 院基或院氧基οο (X) where Ri, Xin and R3 are as above or Η or F, such as Ri and 1
(XI) (XII)(XI) (XII)
如上述,不同的基La亦可爲相同或不同的羧酸酯基, 例如 13 200301668 R5—cAs mentioned above, different groups La can also be the same or different carboxylic acid ester groups, such as 13 200301668 R5-c
(Χΐιΐ) 其中R5係經取代或未經取代的芳族、多環或雜環 聚毗啶基,R5亦可爲2-乙基己基,俾、係2-乙基己酸 酯,或R5可爲椅型結構,俾匕係2-乙醯基環己酸酯, 或La可爲(Χΐιΐ) where R5 is substituted or unsubstituted aromatic, polycyclic or heterocyclic polypyridyl, R5 may also be 2-ethylhexyl, fluorene, 2-ethylhexanoate, or R5 may be It is a chair-type structure, and the stilbene is 2-ethylsulfonyl cyclohexanoate, or La may be
ΟΟ
R (XIV) 其中R係如上,例如烷基、烯基、胺基或稠環, 如環狀或多環之環。 不同的基La亦可爲R (XIV) wherein R is as above, for example an alkyl, alkenyl, amine or fused ring, such as a cyclic or polycyclic ring. Different base La can also be
(XV) (XVI)(XV) (XVI)
14 20030166814 200301668
(XVII) (XVIIa) 其中R、1^和112係如上。 基Lp可選自於(XVII) (XVIIa) wherein R, 1 and 112 are as described above. The group Lp may be selected from
Ph PhPh Ph
n I I 〇=P —N= P — Phn I I 〇 = P —N = P — Ph
I II I
Ph ph (XVIII) 其中各Ph可爲相同或不同且可爲苯基⑴pNp)或經 取代的苯基、其它經取代或未經取代的芳基、經取代 或未經取代的雜環或多環基、經取代或未經取代的稠 合芳基,如萘基、憩、菲或芘基。取代基例如可爲烷 基、方丨兀基、丨兀興基、方族、雜環、多環基、鹵素如 氟、氰基、胺基、經取代的胺基等。第1和2圖中給 予例子,其中R、Ri、R2、Rs和r4可爲相同或不同且 係選自於氫、烴基、經取代或未經取代的芳族、雜環 或多環結構,碳氟化物如三氟甲基,鹵素如氟或硫苯 基;R、R!、R2、R3和R4亦可形成經取代或未經取代 的稠合芳族、雜環和多環結構,且可與單體如苯乙烯 200301668 共聚合。R、l、R2、R3和R4亦可爲不飽和烯基,如 乙烯基或以下基 一 c- CH2= CH厂 R 其中R係如上。Ph ph (XVIII) wherein each Ph may be the same or different and may be phenyl⑴pNp) or substituted phenyl, other substituted or unsubstituted aryl, substituted or unsubstituted heterocyclic or polycyclic Base, substituted or unsubstituted fused aryl, such as naphthyl, aryl, phenanthrene or fluorenyl. The substituent may be, for example, an alkyl group, an alkyl group, an alkyl group, a square group, a heterocyclic ring, a polycyclic group, a halogen such as fluorine, a cyano group, an amino group, a substituted amino group, or the like. Examples are given in Figures 1 and 2, where R, Ri, R2, Rs and r4 may be the same or different and are selected from hydrogen, hydrocarbyl, substituted or unsubstituted aromatic, heterocyclic or polycyclic structures, Fluorocarbons such as trifluoromethyl, halogens such as fluorine or thiophenyl; R, R !, R2, R3, and R4 may also form substituted or unsubstituted fused aromatic, heterocyclic, and polycyclic structures, and It can be copolymerized with a monomer such as styrene 200301668. R, l, R2, R3 and R4 can also be unsaturated alkenyl, such as vinyl or the following-c- CH2 = CH plant R where R is as above.
Lq亦可爲下式化合物Lq can also be a compound of the formula
其中R!、R2和R3係如上定義,例如第3圖中所示 的紅菲(bathophen),其中R係如上或Where R !, R2, and R3 are as defined above, such as the red phenanthrene (bathophen) shown in Figure 3, where R is as above or
(XXII) (XXIII) 其中Ri、1和R3係如上定義。(XXII) (XXIII) wherein Ri, 1 and R3 are as defined above.
Lp亦可爲 16 200301668Lp can also be 16 200301668
Ph Ph I - I — 3 ——— p -n-P S I I Ph Ph 或 (XXIV) ph_ N -p- pII oPh Ph I-I — 3 ——— p -n-P S I I Ph Ph or (XXIV) ph_ N -p- pII o
X (X rrph ο 其中Ph係如上。 第4圖中顯示Lp螯合物的其它例子,第5圖中顯 示苐和苐衍生物例子,而第6至8圖顯示如所示的式 之化合物。X (X rrph ο wherein Ph is as above. Other examples of Lp chelate compounds are shown in Figure 4, examples of fluorene and hydrazone derivatives are shown in Figure 5, and compounds of the formula shown in Figures 6 to 8 are shown.
La和Lp的具體實例係三吡啶基和TMHD,及 丁]^110錯合物、〇^,(^,〇^三吡啶基、皇冠醚、環烷、冷 烷、酞花青、噗啉、伸乙二胺四胺(EDTA)、DCTA、 DTPA 及 TTHA。其中 TMHD 係 2,2,6,6-四甲基-3,5-庚二 酸基,而OPNP係二苯膦醯胺、三苯基正磷。第9圖中 顯示多胺的式子。 其它可用的電致發光材料包括金醌酸鹽如醌酸鋰,及 非稀土金屬錯合物如鋁、鎂、辞及銃錯合物,如β-二酮之 錯合物,例如參-(1,3-二苯基-1,3-丙二酮)(DBM),而適合的 金屬錯合物係 A1(DBM)3、Zn(DBM)2 及 Mg(DBM)2、 Sc(DBM)3 等。 其它可用的電致發光材料包括下式的金屬錯合物 17 200301668Specific examples of La and Lp are tripyridyl and TMHD, and butyl] ^ 110 complex, 〇 ^, (^, 〇 ^ tripyridyl, crown ether, naphthene, cold alkane, phthalocyanine, hydrazone, Ethylenediamine tetramine (EDTA), DCTA, DTPA and TTHA. Among them, TMHD is 2,2,6,6-tetramethyl-3,5-heptanedioic acid group, while OPNP is diphenylphosphine amine, Phenyl orthophosphoric acid. The formula for polyamines is shown in Figure 9. Other useful electroluminescent materials include gold quinone salts such as lithium quinate, and non-rare earth metal complexes such as aluminum, magnesium, zinc, and europium. Materials, such as β-diketone complexes, such as ginseng- (1,3-diphenyl-1,3-propanedione) (DBM), and suitable metal complexes are A1 (DBM) 3, Zn (DBM) 2 and Mg (DBM) 2, Sc (DBM) 3, etc. Other useful electroluminescent materials include metal complexes of the formula 17 200301668
其中Μ係稀土元素、過渡金屬、鑭系元素或锕系 元素以外的金屬;η係Μ之價數;Ri、R2和R3可爲相 同或不同且係選自於氫、烴基、經取代和未經取代的 脂族基、經取代和未經取代的芳族、雜環和多環結構 、氟碳化物如三氟甲基、鹵素如氟、或硫苯基或腈; h和R3亦可形成環結構,且h、R2和R3可與單體如 苯乙烯共聚合。較宜地,Μ係鋁,而R3係苯基或經取 代的苯基,這些錯合物係如專利申請案 籲 PCT/GB02/003 163中所述,其之內容以引用方式納入本 文中。 電致發光材料和裝置係敘述於專利申請案 PCT/GB98/01773 、PCT/GB99/03619 、PCT/GB99/04030 、 PCT/GB99/04024 、 PCT/GB99/04028 、 PCT/GB00/00268 、 PCT/GB01/05113 、 PCT/GB01/05111 、 PCT/GB01/05135 、 PCT/GB021264 、 PCT/GB02/01837 、 PCT/GB02/018884 、 PCT/GB02/01839 、 PCT/GB02/01844 、 PCT/GB02/02094 、 18 200301668 PCT/GB02/02092及PCT/GB02/02093中,其之內容以引用方 式納入本文中。 第一電極較佳係一種透明基板,如導電玻璃或塑膠材 料,其充當陽極,較佳的基板係導電玻璃,如經銦錫氧化 物塗覆的玻璃,但是可以使用任何導電性或具有如金屬或 導電性聚合物之導電層的玻璃。亦可使用導電性聚合物和 經導電性聚合物所塗覆的玻璃或塑膠材料當作基板。 可有一電洞傳輸材料層介於電致發光材料和陽極之間 〇 電洞傳輸材料可爲胺錯合物,如聚(乙烯基咔Π坐)、 N,N’-二苯基-N,N’-雙(3-甲基苯基聯苯基-4,4、二胺 (TPD)、胺基取代的芳族化合物之未經取代或經取代的聚合 物、聚苯胺、經取代的聚苯胺、聚噻吩、經取代的聚瞳吩 、聚矽烷等。聚苯胺的例子係爲以下之聚合物Where M is a metal other than a rare earth element, a transition metal, a lanthanide or an actinide; η is the valence of M; Ri, R2 and R3 may be the same or different and are selected from the group consisting of hydrogen, hydrocarbon, substituted and unsubstituted Substituted aliphatic groups, substituted and unsubstituted aromatic, heterocyclic and polycyclic structures, fluorocarbons such as trifluoromethyl, halogens such as fluorine, or thiophenyl or nitrile; h and R3 may also form Ring structure, and h, R2 and R3 can be copolymerized with a monomer such as styrene. Preferably, M is aluminum and R3 is phenyl or substituted phenyl. These complexes are described in patent application PCT / GB02 / 003 163, the contents of which are incorporated herein by reference. Electroluminescent materials and devices are described in patent applications PCT / GB98 / 01773, PCT / GB99 / 03619, PCT / GB99 / 04030, PCT / GB99 / 04024, PCT / GB99 / 04028, PCT / GB00 / 00268, PCT / GB01 / 05113, PCT / GB01 / 05111, PCT / GB01 / 05135, PCT / GB021264, PCT / GB02 / 01837, PCT / GB02 / 018884, PCT / GB02 / 01839, PCT / GB02 / 01844, PCT / GB02 / 02094, 18 200301668 PCT / GB02 / 02092 and PCT / GB02 / 02093, the contents of which are incorporated herein by reference. The first electrode is preferably a transparent substrate, such as conductive glass or plastic material, which acts as an anode. The preferred substrate is a conductive glass, such as indium tin oxide-coated glass, but any conductivity or metal material such as Or the glass of the conductive layer of a conductive polymer. It is also possible to use conductive polymers and glass or plastic materials coated with conductive polymers as the substrate. There may be a hole-transporting material layer between the electroluminescent material and the anode. The hole-transporting material may be an amine complex, such as poly (vinylcarbazide), N, N'-diphenyl-N, N'-bis (3-methylphenylbiphenyl-4,4, diamine (TPD), unsubstituted or substituted polymers of aromatic compounds substituted with aromatic compounds, polyaniline, substituted poly Aniline, polythiophene, substituted polyquinone, polysilane, etc. Examples of polyaniline are the following polymers
其中R係在鄰位或間位且係氫、CM8烷基、院 氧基、胺基、氯、溴、羥基或以下基Where R is in ortho or meta position and is hydrogen, CM8 alkyl, oxo, amine, chlorine, bromine, hydroxyl or lower
其中R係烷基或芳基,而R’係氫、C1-6烷基或芳基, 19 200301668 與至少一個以上式i之其它單體。 或電洞傳輸材料可爲一種聚苯胺,本發明中可用的聚 苯胺係具有通式Wherein R is alkyl or aryl, and R 'is hydrogen, C1-6 alkyl or aryl, 19 200301668 and at least one other monomer of formula i. Or the hole transport material may be a kind of polyaniline, and the polyaniline used in the present invention has a general formula
RR
Η Η /ρ _ (XXVII) 其中Ρ係1至10,而η係1至20,R係如上定義,X 係陰離子,較佳選自於Cl、Br、S〇4、BF4、PF6、H2P〇3、 H2P04、芳基磺酸根、芳烴二羧酸根、聚苯乙烯磺酸根、聚 丙烯酸根、烷基磺酸根、乙烯苯磺酸根、纖維素磺酸根、 樟腦磺酸根、纖維素磺酸根或全氟化聚陰離子。 芳基磺酸根的例子爲對甲苯磺酸根、苯磺酸根、9,10-憩醌磺酸根及憩磺酸根,芳烴二羧酸根的例子爲肽酸根, φ 而芳烴羧酸根的例子爲苯甲酸根。 我們已經發現胺基取代的芳族化合物之未經取代或經 取代的聚合物之質子化聚合物,如聚苯胺,係難以蒸發或 不能被蒸發的,但是我們已經令人驚異地發現若胺基取代 的芳族化合物之未經取代或經取代的聚合物被去質子化, 則其可容易地被蒸發,即聚合物係可蒸發的。 較佳爲使用可蒸發的胺基取代的芳族化合物之未經取 代或經取代的聚合物之去質子化聚合物。胺基取代的芳族 20 200301668 化合物之去質子化未經取代或經取代的聚合物可藉由用鹼 如氫氧化銨或鹼金屬氫氧化物如氫氧化鈉或氫氧化鉀來處 理以使聚合物被去質子化而形成。 可藉由形成質子化的聚苯胺及去質子化而控制質子化 程度。A. G.MacDiarmid 及 A. F. Epstein, Faraday Discussions,Chem Soc.88 P319 1989中敘述聚苯胺的製備方 法。 聚苯胺的導電性係取決於質子化程度,而最大導電度 爲當質子化程度介於40和60%之間時,例如約50%。 較宜地,聚合物係實質上完全被去質子化。 聚苯胺可由八聚物單元所形成,即P爲4,例如XX Η / ρ _ (XXVII) where P is 1 to 10, and η is 1 to 20, R is as defined above, and X is an anion, preferably selected from Cl, Br, S04, BF4, PF6, and H2P. 3.H2P04, arylsulfonate, aromatic hydrocarbon dicarboxylate, polystyrene sulfonate, polyacrylate, alkylsulfonate, vinylbenzenesulfonate, cellulose sulfonate, camphor sulfonate, cellulose sulfonate or perfluoro Chemical polyanion. Examples of aryl sulfonates are p-toluenesulfonate, benzenesulfonate, 9,10-quinone sulfonate and benzosulfonate, examples of aromatic dicarboxylates are peptidate, and examples of aromatic carboxylates are benzoate . We have found that protonated polymers of unsubstituted or substituted polymers of amine-substituted aromatic compounds, such as polyaniline, are difficult to evaporate or cannot be evaporated, but we have surprisingly found that An unsubstituted or substituted polymer of a substituted aromatic compound is deprotonated so that it can be easily evaporated, that is, the polymer is vaporizable. Deprotonated polymers using unsubstituted or substituted polymers which are vaporizable amine-substituted aromatic compounds are preferred. Amino-substituted aromatic 20 200301668 Deprotonated unsubstituted or substituted polymers of compounds can be polymerized by treatment with a base such as ammonium hydroxide or an alkali metal hydroxide such as sodium or potassium hydroxide Matter is formed by deprotonation. The degree of protonation can be controlled by forming protonated polyaniline and deprotonation. A. G. MacDiarmid and A. F. Epstein, Faraday Discussions, Chem Soc. 88 P319 1989 describe methods for preparing polyaniline. The conductivity of polyaniline depends on the degree of protonation, and the maximum conductivity is when the degree of protonation is between 40 and 60%, such as about 50%. Preferably, the polymer system is substantially completely deprotonated. Polyaniline can be formed from octamer units, ie P is 4, for example
聚苯胺之導電度可爲lxl〇j西門子(Siemen) cnr1之級數 或更高。 芳環可爲經取代或未經取代的,例如經C1-20烷基如 乙基所取代。 聚苯胺可爲苯胺之共聚物,且較佳的共聚物係苯胺與 鄰茴香胺、間胺苯磺酸或鄰胺基酚之共聚物或鄰甲苯胺與 鄰胺基酚、鄰乙基苯胺、鄰伸苯二胺或胺基憩之共聚物。 可用的其它胺基取代芳族化合物之聚合物包括經取代 或未經取代的聚胺基萘、聚胺基憩、聚胺基菲等,及任何 其它縮合的聚芳族化合物之聚合物。聚胺基憩及其製造方 21 200301668 法係揭示於美國專利6,153,726號中。芳環可爲未經取代或 經取代,例如經如上定義的基R所取代。 其它電洞傳輸材料係共軛聚合物,而可用的共輒聚合 物可爲任何所揭示的共軛聚合物或參考us 5807627、 PCT/W〇90/13148 及 PCT/W〇92/03490。 較佳的共軛聚合物係聚(對伸苯基伸乙烯基>PPV及3 PPV的共聚物。其它較佳的聚合物係聚(2>二院氧基伸本 基伸乙烯基),如聚(2-甲氧基-5-(2-甲氧基戊氧基丄‘伸苯 籲 基伸乙烯基)、聚(2-甲氧基戊氧基)-i,4-伸苯基伸乙嫌基)、 聚(2-甲氧基-5-(2_癸氧基- l,4-伸苯基伸乙烯基)及其它聚 (2,5-二烷氧基伸苯基伸乙烯基),其中至少一個烷氧基係長 鏈增溶性烷氧基,聚苐及寡聚苐,聚伸苯基及寡聚伸苯基 ,聚蔥及寡聚憩,聚噻吩及寡聚噻吩。 在PPV中,伸苯環視需要可帶有一或多個取代基,例 如各獨立地選自於烷基,較佳甲基,烷氧基,較佳甲氧基 或乙氧基。 φ 可使用任何含有經取代的衍生物之聚(伸芳基伸乙烯基) ,而聚(伸苯基伸乙烯基)中的伸苯環可經一稠環系統如憩或 萘環所替代,且可增加各聚伸苯基伸乙烯基部分中的伸乙 烯基數目,例如高達於7或更高。 可由 US 5807627、PCT7WO90/13148 和 PCT/W〇92/03490 中所揭示的方法來製造共轭聚合物。 電洞傳輸層的厚度較佳係20nm至200nm。 胺基取代的芳族化合物之聚合物如以上所言的聚苯胺 22 200301668 係可用當緩衝層,具有其它電洞傳輸材料或與其它電洞傳 輸材料配合。 第11、12、13、14、15和16圖顯示某些其它電洞傳輸 材料的紇構式,其中Ri、R2和R3可爲相同或不同且係選自 於氫、及經取代和未經取代的烴基,如經取代和未經取代 的脂族基,經取代和未經取代的芳族、雜環和多環結構, 氟碳化物,如三氟甲基,鹵素,如氟,或硫苯基;& 和&亦可形成經取代或未經取代的稠合芳族、雜環和多環 結構,且可與單體如苯乙烯共聚合。χ係Se、s或〇,γ可 爲氫、經取代或未經取代的烴基,如經取代和未經取代的 方族、雜ί哀和多環結構,氟,氟碳化物,如三氟甲基,鹵 素,如氟或硫苯基或腈。 R!及/或A及/或r3的例子包括脂族、芳族及雜環烷氧 基、方氧基及殘基,經取代和未經取代的苯基、氟苯基、 聯苯基、菲、憩、蔡基及弗基烷基如第三丁基,雜環基如 咔唑。 可有一電子傳輸材料層介於電致發光材料和陰極之間 〇 電子注入材料係一種當被電流通過時會傳輸電子的材 料’包含金屬錯合物,如金屬醌酸鹽,例如醌酸鋁、醌酸 鋰、氰基憩,如9,10-二氰基憩、氰基取代的芳族化合物、 四氰_基二甲院’〜種聚苯乙烯磺酸鹽,或一種具有第1〇 圖所示結構式的化合物,其中苯環可經如上定義的取代基 R所取代。 23 200301668 視情況地,電洞傳輸材料可與電致發光材料混合及與 它共沈積;視情況地,電洞傳輸材料可與電致發光材料混 合及與它共沈積;視情況地,電洞傳輸材料、電致發光材 料和電子注入材料可混在一起以形成一層,其使結構簡化 〇 第一電極較佳爲至少對於可從裝置發出的所有波長或 部分波長之光而言,至少部分透光的,最佳爲實質上透明 的。第一電極例如可由ιτο(銦錫氧化物)、το(氧化錫)或金 | 所形成。第一電極較佳爲配置於發光區之目視方向中,其 介於發光區與觀看者的預期位置之間。第一電極可爲層狀 。該裝置含有超過一個畫素,可設有第一電極以容許(與第 二電極合作)各畫素被獨立地定址。 第二電極的功能爲當作陰極且可爲任何低功函數的金 屬,例如鋁、鈣、鋰、銀/鎂合金、稀土金屬合金等,其中 鋁係較佳的金屬。金屬氟化物如鹼金屬、稀土金屬或其合 金可用當作第二電極,例如藉由具有一金屬氟化物層形成 _ 在金屬上。 本發明的顯示器可爲單色或多色的。電致發光稀土螯 合化合物係已知的,其將放出一範圍的光線,例如紅、綠 和藍光及白光,且例子係揭示於專利申請案WO98/58037、 PCT/GB98/01773 ^ PCT/GB99/03619、PCT/GB99/04030、 PCT/GB99/04024、PCT//GB99/4028、PCT/GB00/00268,且可 用於形成發出該些顏色的0LED。因此,可藉由配置三個獨 立的背板,各在光學系統的不同側發出不同的主要單色, 24 200301668 由其另一側可見到合倂的色像,而形成全彩顯示器。另外 ,可製造發出不同顏色的稀土螯合物電致發光化合物,俾 三個相鄰的畫素群中之相鄰二極體畫素產生紅光、綠光及 藍光。在另一變化例中,場順序濾色片可安裝於發白光的 顯示器。 兩個電極之一或全部可由矽所形成,而電致發光材料 和電洞傳輸及電子傳輸材料的中介層可形成在砂基板上當 作畫素。較宜地,各畫素包括至少一層稀土螯合電致發光 材料,且一(至少半)透明電極在遠離基板的一面係與有機層 接觸。 較宜地,基板係屬結晶矽者,且基板的表面可被拋光 或平滑化,以在電極或電致發光化合物沈積之前產生平坦 的表面。另外,可用一層導電性聚合物來塗覆非平面化的 矽基板,以便在沈積其它材料之前產生光滑、平坦的表面。 在一具體態樣中,各畫素包括與基板接觸的金屬電極 。視金屬和透明電極的相對功函數而定,任一者皆可當作 陽極’而以另一者當作陰極。 當矽基板係陰極時,一經銦錫氧化物塗覆的玻璃可充 當陽極,而光線係經過陽極發射出。當矽基板當作陽極時 ,陰極可由一具有適當工作函數的透明電極所形成,例如 由一經銦鋅氧化物塗覆的玻璃,其中銦鋅氧化物具有低工 作函數。陽極可具有一形成在上的金屬透明塗層,其給予 適當的工作函數。這些裝置有時稱爲頂部發射裝置或背部 發射裝置。 25 200301668 金屬電極可由數金屬層所構成,例如由較高工作函數 的金屬如鋁沈積在基板上,且一較低功函數的金屬如鈣沈 積在該較高功函數的金屬上。在另一例子中,更一層導電 性聚合物係位於一穩定的金屬如鋁之頂上。 較宜地,電極亦充當各畫素之背後的鏡子,且係沈積 在基板之平面化表面上或沈入其內。然而替代地,可有一 毗鄰於基板的光線吸收用黑層。 在猶另一實施例中,藉由暴露於適當的水溶液中以形 成導電性畫素墊之陣列(其充當畫素電極的底部接觸),而使 得底部導電性聚合物層之選擇區域成爲不導電的。 如WO00/60669中所述的,各畫素所發出的光線亮度較 佳係爲可用類比方式控制的,即藉由調整矩陣電路所施加 的電壓或電流或藉由輸入一在各畫素電路中被轉變成類比 信號的數位信號。基板較佳亦提供數據驅動器、數據轉換 器及掃描驅動器,以便處理資訊、將畫素陣列定址,俾產 生影像。當使用視外加電壓而發出不同顏色光線的電致發 光材料時,可藉由調整矩陣變換電路來控制各畫素的顏色。 在一具體態樣中,藉由一包括電壓控制元件及可變電 阻元件(它們可方便地由金屬-氧化物-半導體場效應電晶體 (MOSFET)所形成)的開關或由一主動矩陣電晶體來控制各畫 素。 在電致發光裝置中,裝置可依序包括一在電洞傳輸層 上的陰極、一電致發光層、一電子傳輸層、和陰極,視需 要可具有其它層。當藉由熔融沈積以沈積電致發光材料時 26 200301668 ,其所沈積到的層應能忍受熔融沈積溫度,且若須要’可 有一緩衝層。可藉由熔融沈積來沈積電洞傳輸層及電子傳 輸層,倘若它們具有適合特性且可忍受所涉及的溫度的話 ,或可藉由真空沈積或其它適合方式來沈積它們。當藉由 熔融沈積來沈積時,任何材料可與聚合物如熱塑性聚合物 混合。 可使用的熔融沈積的任何習用方法。 在熔融沈積的一個方法中,所要沈積的材料係被熔化 ,然後將一層已熔融的材料沈積到基板上。此通常係藉由 基板與槽溝之間相對移動來進行,熱融的液體係經由該槽 溝被擠出,俾使一對應槽溝寬度的層厚度沈積到基板上。 該方法係用於沈積膠層和表面處理層。一特別應用係爲液 相磊晶熔融沈積法,其用於形成某些類型的半導體裝置。 該方法敘述於美國專利第4235191號中。 另一方法爲使用熔融材料的噴墨或噴泡印刷。 【圖式簡單說明】 第1及2圖顯示基Lp之例子。 第3圖顯示紅菲的例子。 第4圖顯示Lp螯合物的例子。‘ 第5圖顯示莽及苐衍生物例子。 第6至8圖顯示如所示的式之化合物。 第9圖顯示多胺的式子。 第11至16圖顯示電洞傳輸材料的結構式。 27The conductivity of polyaniline can be lxl0j Siemens cnr1 series or higher. The aromatic ring may be substituted or unsubstituted, for example, by a C1-20 alkyl group such as ethyl. Polyaniline may be a copolymer of aniline, and a preferred copolymer is a copolymer of aniline and o-anisidine, m-aminobenzenesulfonic acid or o-aminophenol, or o-toluidine and o-aminophenol, o-ethylaniline, Copolymer of o-phenylenediamine or amino group. Useful polymers of other amine-substituted aromatic compounds include substituted or unsubstituted polynaphthalenes, polyaminos, polyphenanthrenes, and the like, and polymers of any other condensed polyaromatics. Polyamines and their manufacturing methods 21 200301668 The legal system is disclosed in US Patent No. 6,153,726. The aromatic ring may be unsubstituted or substituted, for example, by a group R as defined above. Other hole-transporting materials are conjugated polymers, and useful conjugated polymers can be any of the disclosed conjugated polymers or reference us 5807627, PCT / WO90 / 13148 and PCT / WO92 / 03490. Preferred conjugated polymers are poly (copolymers of p-phenylene vinylene> PPV and 3 PPV. Other preferred polymer systems are poly (2 > diaminooxy vinyl phenylene vinyl), such as poly ( 2-methoxy-5- (2-methoxypentyloxy 丄 'phenylene vinylene), poly (2-methoxypentyloxy) -i, 4-phenylene vinylene) , Poly (2-methoxy-5- (2-decyloxy-1,4-phenylene vinylene) and other poly (2,5-dialkoxyphenylene vinylene), of which at least one alkane Oxygen is a long-chain solubilizing alkoxy group, polyfluorene and oligomeric fluorene, polyphenylene and oligophenylene, polyallium and oligomeric, polythiophene and oligothiophene. In PPV, benzene ring is required It may carry one or more substituents, for example each independently selected from alkyl, preferably methyl, alkoxy, preferably methoxy or ethoxy. Φ Any polymer containing substituted derivatives may be used (Phenylene vinylene), and the polyphenylene vinylene ring can be replaced by a condensed ring system such as a ring or a naphthalene ring, and the polyphenylene vinylene moiety can be increased. Vinyl number , Such as up to 7 or higher. Conjugated polymers can be made by the methods disclosed in US 5807627, PCT7WO90 / 13148 and PCT / WO92 / 03490. The thickness of the hole transport layer is preferably 20 nm to 200 nm. Amine Polymers of substituted aromatic compounds such as polyaniline 22 200301668 mentioned above can be used as a buffer layer, have other hole transport materials or cooperate with other hole transport materials. Articles 11, 12, 13, 14, 15 and Figure 16 shows the structural formulas of certain other hole transport materials, where Ri, R2, and R3 can be the same or different and are selected from hydrogen, and substituted and unsubstituted hydrocarbon groups, such as substituted and unsubstituted Aliphatic groups, substituted and unsubstituted aromatic, heterocyclic, and polycyclic structures, fluorocarbons such as trifluoromethyl, halogens such as fluorine, or thiophenyl; & and & can also form Substituted or unsubstituted fused aromatic, heterocyclic, and polycyclic structures, and copolymerizable with monomers such as styrene. Χ series Se, s or 0, γ may be hydrogen, substituted or unsubstituted Hydrocarbyl, such as substituted and unsubstituted square, hetero, and polycyclic structures, fluorine, fluorine Compounds such as trifluoromethyl, halogens such as fluoro or thiophenyl or nitrile. Examples of R! And / or A and / or r3 include aliphatic, aromatic and heterocycloalkoxy, squaroxy and residues , Substituted and unsubstituted phenyl, fluorophenyl, biphenyl, phenanthrene, chiral, zeki and fluorenyl alkyl such as tertiary butyl, heterocyclic group such as carbazole. There may be an electron transport material interposed Between the electroluminescent material and the cathode, the electron injection material is a material that will transport electrons when passed by an electric current, 'comprising metal complexes, such as metal quinate salts, such as aluminum quinate, lithium quinate, and cyano , Such as 9,10-dicyano group, cyano-substituted aromatic compound, tetracyano-dimethyl dimethyl sulfonate, or a compound having the structural formula shown in FIG. 10, Wherein the benzene ring may be substituted by a substituent R as defined above. 23 200301668 Optionally, hole-transporting materials can be mixed with and co-deposited with electroluminescent materials; optionally, hole-transporting materials can be mixed with and co-deposited with electroluminescent materials; optionally, holes The transmission material, the electroluminescent material, and the electron injection material can be mixed together to form a layer, which simplifies the structure. The first electrode is preferably at least partially transparent to light of all or a portion of the wavelength that can be emitted from the device. Of the best, it is substantially transparent. The first electrode may be formed of, for example, ιτο (indium tin oxide), το (tin oxide), or gold |. The first electrode is preferably arranged in the visual direction of the light-emitting area, which is between the light-emitting area and the expected position of the viewer. The first electrode may be layered. The device contains more than one pixel, and a first electrode may be provided to allow (in cooperation with the second electrode) each pixel to be addressed independently. The second electrode functions as a cathode and can be any metal with a low work function, such as aluminum, calcium, lithium, silver / magnesium alloy, rare earth metal alloy, etc., among which aluminum is a preferred metal. A metal fluoride such as an alkali metal, a rare earth metal or an alloy thereof can be used as the second electrode, for example, by forming a metal fluoride layer on a metal. The display of the present invention may be monochrome or multicolor. Electroluminescent rare earth chelate compounds are known and will emit a range of light, such as red, green and blue and white light, and examples are disclosed in patent applications WO98 / 58037, PCT / GB98 / 01773 ^ PCT / GB99 / 03619, PCT / GB99 / 04030, PCT / GB99 / 04024, PCT // GB99 / 4028, PCT / GB00 / 00268, and can be used to form 0LEDs emitting these colors. Therefore, a full-color display can be formed by arranging three independent backplanes, each emitting a different main monochrome on a different side of the optical system. 24 200301668 The combined color image can be seen from the other side. In addition, a rare-earth chelate electroluminescent compound emitting different colors can be produced, and adjacent diode pixels in three adjacent pixel groups generate red, green, and blue light. In another variation, the field-sequential color filter can be mounted on a white-emitting display. One or both of the two electrodes may be formed of silicon, and an interlayer of an electroluminescent material and a hole transporting and electron transporting material may be formed on a sand substrate as a pixel. Preferably, each pixel includes at least one layer of a rare earth chelated electroluminescent material, and a (at least semi-transparent) transparent electrode is in contact with the organic layer on a side remote from the substrate. Preferably, the substrate is a crystalline silicon, and the surface of the substrate may be polished or smoothed to produce a flat surface before the electrode or the electroluminescent compound is deposited. Alternatively, a non-planar silicon substrate can be coated with a layer of conductive polymer to produce a smooth, flat surface before depositing other materials. In a specific aspect, each pixel includes a metal electrode in contact with the substrate. Depending on the relative work functions of the metal and the transparent electrode, either one can be used as the anode 'and the other as the cathode. When the silicon substrate is a cathode, a glass coated with indium tin oxide can act as an anode, and light is emitted through the anode. When a silicon substrate is used as the anode, the cathode may be formed of a transparent electrode having an appropriate work function, such as a glass coated with indium zinc oxide, where the indium zinc oxide has a low work function. The anode may have a metallic clear coating formed thereon, which gives an appropriate work function. These devices are sometimes referred to as top launchers or back launchers. 25 200301668 A metal electrode may be composed of several metal layers. For example, a metal with a higher work function such as aluminum is deposited on a substrate, and a metal with a lower work function such as calcium is deposited on the metal with a higher work function. In another example, a further layer of conductive polymer is on top of a stable metal such as aluminum. Preferably, the electrode also acts as a mirror behind each pixel, and is deposited on or sunk into the planarized surface of the substrate. Alternatively, however, there may be a light absorbing black layer adjacent to the substrate. In still another embodiment, a selected region of the bottom conductive polymer layer is made non-conductive by being exposed to a suitable aqueous solution to form an array of conductive pixel pads (which serve as the bottom contacts of the pixel electrodes). of. As described in WO00 / 60669, the brightness of the light emitted by each pixel is preferably controllable by analogy, that is, by adjusting the voltage or current applied by the matrix circuit or by inputting one into each pixel circuit. A digital signal that is converted into an analog signal. The substrate preferably also provides data drivers, data converters, and scan drivers to process information, address pixel arrays, and generate images. When using electroluminescent materials that emit light of different colors depending on the applied voltage, the color of each pixel can be controlled by adjusting the matrix conversion circuit. In a specific aspect, by a switch including a voltage control element and a variable resistance element (which can be conveniently formed by a metal-oxide-semiconductor field effect transistor (MOSFET)) or an active matrix transistor To control each pixel. In the electroluminescent device, the device may include a cathode, an electroluminescent layer, an electron transporting layer, and a cathode in order on the hole transporting layer, and may have other layers as necessary. When the electroluminescent material is deposited by fused deposition 26 200301668, the layer to which it is deposited should be able to withstand the fused deposition temperature and, if necessary, may have a buffer layer. Hole-transport and electron-transport layers can be deposited by fused deposition, provided they have suitable characteristics and can tolerate the temperatures involved, or they can be deposited by vacuum deposition or other suitable means. When deposited by fused deposition, any material can be mixed with a polymer such as a thermoplastic polymer. Any conventional method of fused deposition that can be used. In one method of fused deposition, the material to be deposited is melted, and then a layer of molten material is deposited on a substrate. This is usually carried out by the relative movement between the substrate and the groove. The hot melt liquid system is extruded through the groove, so that a layer thickness corresponding to the width of the groove is deposited on the substrate. This method is used to deposit a glue layer and a surface treatment layer. One particular application is liquid phase epitaxial fused deposition, which is used to form certain types of semiconductor devices. This method is described in U.S. Patent No. 4,235,191. Another method is inkjet or bubble printing using a molten material. [Schematic description] Figures 1 and 2 show examples of basis Lp. Figure 3 shows an example of Hong Fei. Figure 4 shows an example of an Lp chelate. ‘Figure 5 shows examples of rash and hydrazone derivatives. Figures 6 to 8 show compounds of the formula shown. Figure 9 shows the formula for polyamines. Figures 11 to 16 show the structural formulas of hole transport materials. 27
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0128076A GB0128076D0 (en) | 2001-11-23 | 2001-11-23 | Method of forming electroluminescent devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200301668A true TW200301668A (en) | 2003-07-01 |
Family
ID=9926305
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW91134052A TW200301668A (en) | 2001-11-23 | 2002-11-22 | Method of forming electroluminescent devices |
Country Status (2)
| Country | Link |
|---|---|
| GB (1) | GB0128076D0 (en) |
| TW (1) | TW200301668A (en) |
-
2001
- 2001-11-23 GB GB0128076A patent/GB0128076D0/en not_active Ceased
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2002
- 2002-11-22 TW TW91134052A patent/TW200301668A/en unknown
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| Publication number | Publication date |
|---|---|
| GB0128076D0 (en) | 2002-01-16 |
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