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TW198138B - - Google Patents

Info

Publication number
TW198138B
TW198138B TW081103753A TW81103753A TW198138B TW 198138 B TW198138 B TW 198138B TW 081103753 A TW081103753 A TW 081103753A TW 81103753 A TW81103753 A TW 81103753A TW 198138 B TW198138 B TW 198138B
Authority
TW
Taiwan
Prior art keywords
strut
segments
mask
stitching
aided
Prior art date
Application number
TW081103753A
Other languages
English (en)
Inventor
Steven D Berger
Marvin Leventhal
James A Liddle
Original Assignee
American Telephone & Telegraph
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Telephone & Telegraph filed Critical American Telephone & Telegraph
Application granted granted Critical
Publication of TW198138B publication Critical patent/TW198138B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • H10P14/68—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31788—Lithography by projection through mask
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31791—Scattering mask

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
TW081103753A 1991-12-30 1992-05-14 TW198138B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/814,953 US5260151A (en) 1991-12-30 1991-12-30 Device manufacture involving step-and-scan delineation

Publications (1)

Publication Number Publication Date
TW198138B true TW198138B (zh) 1993-01-11

Family

ID=25216448

Family Applications (1)

Application Number Title Priority Date Filing Date
TW081103753A TW198138B (zh) 1991-12-30 1992-05-14

Country Status (7)

Country Link
US (1) US5260151A (zh)
EP (1) EP0550173B1 (zh)
JP (1) JP3457346B2 (zh)
KR (1) KR100272116B1 (zh)
CA (1) CA2083112C (zh)
DE (1) DE69233067T2 (zh)
TW (1) TW198138B (zh)

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JP3601630B2 (ja) * 1995-11-01 2004-12-15 株式会社ニコン 荷電粒子線転写方法
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US5798194A (en) * 1996-05-22 1998-08-25 Nikon Corporation Masks for charged-particle beam microlithography
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JPH10135103A (ja) * 1996-10-25 1998-05-22 Nikon Corp 荷電粒子線転写用マスクまたはｘ線転写用マスクの製造方法
US5824441A (en) * 1996-12-03 1998-10-20 Lucent Technologies Inc. Lithographic process for device fabrication utilizing back-scattered electron beam signal intensity for alignment
US6051344A (en) * 1997-06-17 2000-04-18 Intel Corporation Multiple reduction photolithography technique
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JPH11204422A (ja) 1998-01-14 1999-07-30 Nikon Corp 荷電粒子線転写方法
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JP2000124114A (ja) * 1998-10-14 2000-04-28 Nikon Corp 荷電粒子線投影露光方法、荷電粒子線投影露光装置及びそれに用いるレチクル
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JP3706527B2 (ja) 1999-06-30 2005-10-12 Ｈｏｙａ株式会社 電子線描画用マスクブランクス、電子線描画用マスクおよび電子線描画用マスクの製造方法
US6601025B1 (en) 1999-08-10 2003-07-29 International Business Machines Corporation Method to partition the physical design of an integrated circuit for electrical simulation
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US6333508B1 (en) 1999-10-07 2001-12-25 Lucent Technologies, Inc. Illumination system for electron beam lithography tool
US7345290B2 (en) * 1999-10-07 2008-03-18 Agere Systems Inc Lens array for electron beam lithography tool
US6261726B1 (en) 1999-12-06 2001-07-17 International Business Machines Corporation Projection electron-beam lithography masks using advanced materials and membrane size
JP2001189257A (ja) 1999-12-28 2001-07-10 Nikon Corp 荷電粒子線照明光学系の調整方法
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US6404481B1 (en) * 2000-05-25 2002-06-11 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Adaptive lithography membrane masks
US6630984B2 (en) * 2000-08-03 2003-10-07 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
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US6855467B2 (en) * 2000-09-05 2005-02-15 Hoya Corporation Transfer mask, method of dividing pattern or transfer mask, and method of manufacturing transfer mask
US6528799B1 (en) 2000-10-20 2003-03-04 Lucent Technologies, Inc. Device and method for suppressing space charge induced aberrations in charged-particle projection lithography systems
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JP3674573B2 (ja) * 2001-06-08 2005-07-20 ソニー株式会社 マスクおよびその製造方法と半導体装置の製造方法
KR100522725B1 (ko) * 2002-04-04 2005-10-20 주식회사 디엠에스 대면적 마스크 및 이를 구비한 노광 시스템
JP4440563B2 (ja) * 2002-06-03 2010-03-24 三星モバイルディスプレイ株式會社 有機電子発光素子の薄膜蒸着用マスクフレーム組立体
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JP2005340835A (ja) * 2004-05-28 2005-12-08 Hoya Corp 電子線露光用マスクブランクおよびマスク
TWI330762B (en) * 2005-03-29 2010-09-21 Asml Netherlands Bv Seal of a lithographic apparatus, lithographic apparatus, device manufacturing method and data storage medium
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US9312097B2 (en) 2007-05-09 2016-04-12 Protochips, Inc. Specimen holder used for mounting samples in electron microscopes
DK2153461T3 (en) * 2007-05-09 2015-07-13 Protochips Inc Microscopy Support structures
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Also Published As

Publication number Publication date
DE69233067T2 (de) 2004-04-01
US5260151A (en) 1993-11-09
KR930014841A (ko) 1993-07-23
JP3457346B2 (ja) 2003-10-14
EP0550173A1 (en) 1993-07-07
JPH05251317A (ja) 1993-09-28
DE69233067D1 (de) 2003-06-26
CA2083112C (en) 1996-10-22
EP0550173B1 (en) 2003-05-21
KR100272116B1 (ko) 2000-12-01
CA2083112A1 (en) 1993-07-01

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