SU692810A1 - Ceramic material - Google Patents
Ceramic materialInfo
- Publication number
- SU692810A1 SU692810A1 SU782569610A SU2569610A SU692810A1 SU 692810 A1 SU692810 A1 SU 692810A1 SU 782569610 A SU782569610 A SU 782569610A SU 2569610 A SU2569610 A SU 2569610A SU 692810 A1 SU692810 A1 SU 692810A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- ceramic
- ceramic material
- capacitors
- temperature
- zinc borate
- Prior art date
Links
- 229910010293 ceramic material Inorganic materials 0.000 title description 7
- 239000003990 capacitor Substances 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 5
- 239000000203 mixture Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Ceramic Capacitors (AREA)
- Inorganic Insulating Materials (AREA)
Description
..1 Изобретение относитс к керамиче кйм материалам и моЖеТ быть исгюлбЗ вано в электронной технике дл иэготсжлени высокочастотных термостабильных конденсаторов. известен керамический материал н основе CaTiOj -ZajOj-TiO дл высок частотных термостабильных ионолитных конденсаторов {. Этот материал имеет низкую, диэлектрическую проницаемость . Наиболее близким к изобретению вл етс материал на основе керамического спека титаната бари с редкоземельным окислом из р да ,. Ndj,Oj , SmjiOj и окисью висмута 2. Однако этот Материал характеризуетс плохой воспроизводимостью рсн нах диэлектрических свойств и высоко температурой спекани . Целью изобретени вл етс повышение стабильности температурного коэффициента диэлектрической проницаемости и снижение температуры спекани . Дл этого керамический материал, преимущественно дл высокочастотных термостабильных конденсаторов, на основекерамического спека титаната бари с редкоземельным окислом из р да LdjOjiNdjOj ( SntjOs и окисью висмута, дополнительно содержит борат цинка при следующем соотношении исходных компонентов, вес.%: Кера:мический спек 95-97 БораТ цинка Причем керамический спек содержит исходные компоненты в следующем соотношении, вес.%: 17-20 29-38,5 bdjO-iNdiOjjStriaOa 5,5-17,0 ttijO, 37,0-39,5 Т402 при этом борат цинка содержит окись цинйа и окисел бора при следующем соотношении исходных компонентов , вес.%: UnO53-54,5 . . Б,0, 45,5-47. Дл получени керамического материала сначала приготгшливгиот по обычной керамической технологии из PdCOj 7(02 , Ь1дОз и (где Zn-t.a,Nd, Bra) cneKft«Ln fi- b.,a с использованием двукратного синтеза при текшёратурах 1100С и 1320 . Затем синтезируют борат цинка из 1лО и «j Ojпри температуре..1 The invention relates to ceramic-material materials and can be manufactured in electronic technology for the preparation of high-frequency thermostable capacitors. Ceramic material based on CaTiOj -ZajOj-TiO for high-frequency thermostable ionolithic capacitors {. This material has a low dielectric constant. Closest to the invention is a material based on ceramic sinter of barium titanate with a rare earth oxide from the series,. Ndj, Oj, SmjiOj and bismuth oxide 2. However, this Material is characterized by poor reproducibility of the pH of the dielectric properties and high sintering temperature. The aim of the invention is to increase the stability of the temperature coefficient of the dielectric constant and reduce the sintering temperature. For this, the ceramic material, mainly for high-frequency thermostable capacitors, based on ceramic-ceramic barium titanate with a rare-earth oxide from the series LdjOjiNdjOj (SntjOs and bismuth oxide), additionally contains zinc borate in the following ratio of initial components, wt.%: Cera: ceramic spectrum 95-97 Zinc borate. Moreover, ceramic sinter contains the initial components in the following ratio, wt.%: 17-20 29-38.5 bdjO-iNdiOjjStriaOa 5.5-17.0 ttijO, 37.0-39.5 T402 while zinc borate contains oxide boron oxide and boron in the following ratio ref one components, wt.%: UnO53-54.5. B, 0, 45.5-47. To obtain a ceramic material, first use the usual ceramic technology from PdCOj 7 (02, L1dOz and (where Zn-ta, Nd, Bra) cneKft "Ln fi b., A using two-fold synthesis at a pattern of 1100 ° C and 1320. Then zinc borate is synthesized from 1HO and" j Oj at a temperature
800-870 С. Спеки измельчают и составл ют шихту керамического материала из. Ва2п2(гХ)ЫауТ1;,, О и бората цинка, вз тых в необходимом соотношении . После первичного смешивани шихту подвергают термообработке при температуре 880- 70С и измельчают по удельной поверхности &уц 5500 см.;800-870 ° C. The speckles are crushed and make up the mixture of ceramic material from. Ba2n2 (gX) LnT1 ;, O and zinc borate, taken in the required ratio. After the initial mixing, the mixture is subjected to heat treatment at a temperature of 880- 70 ° C and crushed on a specific surface of 5500 cm;
Из порошка материала любым ,из известных методов формуют заготовкиFrom the powder material of any of the known methods molded blanks
конденсаторов, которые обжигают в окислительной среде при температуре 1020-1080с. При этом достигаетс высока воспроизводимость температурного коэффициента емкости (ТКЕ) 5 конденсаторов, а в качестве их Электродов используетс сплав (30 и 70%) серебра с палладием взамен платины.capacitors that are calcined in an oxidizing environment at a temperature of 1020-1080s. In this case, a high reproducibility of the temperature coefficient of capacitance (TKE) of 5 capacitors is achieved, and an alloy (30 and 70%) of silver with palladium instead of platinum is used as their Electrodes.
В таблице приведены составы и свойства предложенного керамическоJQ го материала. .The table shows the compositions and properties of the proposed ceramic material. .
ТаблицаTable
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU782569610A SU692810A1 (en) | 1978-01-17 | 1978-01-17 | Ceramic material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU782569610A SU692810A1 (en) | 1978-01-17 | 1978-01-17 | Ceramic material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU692810A1 true SU692810A1 (en) | 1979-10-25 |
Family
ID=20744478
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU782569610A SU692810A1 (en) | 1978-01-17 | 1978-01-17 | Ceramic material |
Country Status (1)
| Country | Link |
|---|---|
| SU (1) | SU692810A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4379854A (en) * | 1981-02-06 | 1983-04-12 | Erie Technological Products, Inc. | Low temperature firing (1800°-2100° F.) of barium titanate with flux (lead titanate-bismuth titanate-zinc oxide and boron oxide) |
| US5264403A (en) * | 1991-09-27 | 1993-11-23 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass |
| US5292694A (en) * | 1991-09-27 | 1994-03-08 | Ngk Insulators, Ltd. | Method of producing low temperature firing dielectric ceramic composition containing B2 O3 |
| US5479140A (en) * | 1991-09-27 | 1995-12-26 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
-
1978
- 1978-01-17 SU SU782569610A patent/SU692810A1/en active
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4379854A (en) * | 1981-02-06 | 1983-04-12 | Erie Technological Products, Inc. | Low temperature firing (1800°-2100° F.) of barium titanate with flux (lead titanate-bismuth titanate-zinc oxide and boron oxide) |
| US5264403A (en) * | 1991-09-27 | 1993-11-23 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass |
| US5292694A (en) * | 1991-09-27 | 1994-03-08 | Ngk Insulators, Ltd. | Method of producing low temperature firing dielectric ceramic composition containing B2 O3 |
| US5304521A (en) * | 1991-09-27 | 1994-04-19 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
| US5350721A (en) * | 1991-09-27 | 1994-09-27 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZNO-B203-SI02 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
| US5458981A (en) * | 1991-09-27 | 1995-10-17 | Ngk Insulators, Ltd. | Method of producing low temperature firing dielectric ceramic composition containing B2 O3 |
| US5479140A (en) * | 1991-09-27 | 1995-12-26 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
| US5485132A (en) * | 1991-09-27 | 1996-01-16 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
| US5488019A (en) * | 1991-09-27 | 1996-01-30 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
| US5493262A (en) * | 1991-09-27 | 1996-02-20 | Ngk Insulators, Ltd. | Dielectric ceramic composition containing ZnO-B2 O3 -SiO2 glass, method of preparing the same, and resonator and filter using the dielectric ceramic composition |
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