SU563826A1 - Device for depositing thin films - Google Patents
Device for depositing thin filmsInfo
- Publication number
- SU563826A1 SU563826A1 SU7502141197A SU2141197A SU563826A1 SU 563826 A1 SU563826 A1 SU 563826A1 SU 7502141197 A SU7502141197 A SU 7502141197A SU 2141197 A SU2141197 A SU 2141197A SU 563826 A1 SU563826 A1 SU 563826A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- vacuum chamber
- thin films
- solenoid
- evaporator
- lid
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title claims 3
- 238000000151 deposition Methods 0.000 title 1
- 238000010891 electric arc Methods 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims 1
- 230000005684 electric field Effects 0.000 claims 1
- 239000000696 magnetic material Substances 0.000 claims 1
- 239000011859 microparticle Substances 0.000 claims 1
- 230000007935 neutral effect Effects 0.000 claims 1
- 230000001902 propagating effect Effects 0.000 claims 1
- 239000002184 metal Substances 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Description
Через соленоид 7 пропускаетс ток, создающий магнитное поле 20-50 Э. На камеру 1 подаетс напр жение 40-80 В относительно катода 4, на крынку 2-30 В. При этих параметрах конфигураци магнитных полей имеет вид, показанный на фиг. 2. Силовые линии 10 пол соленоида 6 вход т в крышку 2, силовые линии 11 пол соленоида 7 имеют преобладающую по величине составл ющую, параллельную внутренней поверхности камеры 1. При такой конфигурации магнитных полей электронный ток (ток дуги) стремитс двигатьс по силовым лини м пол . Кратковременным касанием катода 4 поджигающим электродом 5 возбуждаетс электрическа дуга, В парах металла дуга горит при сколь угодно низком давлении остато ных газов. Напр жение на электродах дуги устанавливаетс близким к катод ному падению потенциала, так как падение .напр жени на положительном столбе вакуумной дуги незначительно. Напыление испаренного с катода 4 металла происходит потоком металлических ионов, отражакхцихс от потенВThrough the solenoid 7, a current is generated that creates a magnetic field of 20-50 E. A voltage of 40–80 V relative to cathode 4 is applied to chamber 1, and 2–30 V to valve. With these parameters, the configuration of the magnetic fields is as shown in FIG. 2. Power lines 10 the field of the solenoid 6 are included in cover 2, power lines 11 the fields of the solenoid 7 have a predominant component parallel to the inner surface of chamber 1. With this configuration of magnetic fields, the electronic current (arc current) tends to move along the power lines the floor A short-time contact of the cathode 4 by the igniting electrode 5 initiates an electric arc. In metal vapor, the arc burns at an arbitrarily low pressure of the residual gases. The voltage across the arc electrodes is established close to the cathode potential drop, since the voltage drop across the positive column of the vacuum arc is insignificant. The evaporation of the metal evaporated from the cathode 4 occurs through the flow of metal ions, which reflect from the potential
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Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU7502141197A SU563826A1 (en) | 1975-06-04 | 1975-06-04 | Device for depositing thin films |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SU7502141197A SU563826A1 (en) | 1975-06-04 | 1975-06-04 | Device for depositing thin films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SU563826A1 true SU563826A1 (en) | 1978-03-05 |
Family
ID=20621708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SU7502141197A SU563826A1 (en) | 1975-06-04 | 1975-06-04 | Device for depositing thin films |
Country Status (1)
| Country | Link |
|---|---|
| SU (1) | SU563826A1 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2485863A1 (en) * | 1980-06-25 | 1981-12-31 | Axenov Ivan | VACUUM ARC PLASMA DEVICE |
| FR2524245A1 (en) * | 1982-03-22 | 1983-09-30 | Axenov Ivan | Arc plasma gun - with coaxial electromagnet facing cathode inside plasma guide carrying focusing solenoid |
| US6103074A (en) * | 1998-02-14 | 2000-08-15 | Phygen, Inc. | Cathode arc vapor deposition method and apparatus |
| US9136794B2 (en) | 2011-06-22 | 2015-09-15 | Research Triangle Institute, International | Bipolar microelectronic device |
-
1975
- 1975-06-04 SU SU7502141197A patent/SU563826A1/en active
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2485863A1 (en) * | 1980-06-25 | 1981-12-31 | Axenov Ivan | VACUUM ARC PLASMA DEVICE |
| WO1982000075A1 (en) * | 1980-06-25 | 1982-01-07 | V Khoroshikh | Vacuum arc plasma device |
| US4551221A (en) * | 1980-06-25 | 1985-11-05 | Axenov Ivan I | Vacuum-arc plasma apparatus |
| DE3152131C2 (en) * | 1980-06-25 | 1986-09-04 | Ivan Ivanovič Char'kov Aksenov | Vacuum arc plasma system |
| FR2524245A1 (en) * | 1982-03-22 | 1983-09-30 | Axenov Ivan | Arc plasma gun - with coaxial electromagnet facing cathode inside plasma guide carrying focusing solenoid |
| US6103074A (en) * | 1998-02-14 | 2000-08-15 | Phygen, Inc. | Cathode arc vapor deposition method and apparatus |
| US9136794B2 (en) | 2011-06-22 | 2015-09-15 | Research Triangle Institute, International | Bipolar microelectronic device |
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