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SU563826A1 - Device for depositing thin films - Google Patents

Device for depositing thin films

Info

Publication number
SU563826A1
SU563826A1 SU7502141197A SU2141197A SU563826A1 SU 563826 A1 SU563826 A1 SU 563826A1 SU 7502141197 A SU7502141197 A SU 7502141197A SU 2141197 A SU2141197 A SU 2141197A SU 563826 A1 SU563826 A1 SU 563826A1
Authority
SU
USSR - Soviet Union
Prior art keywords
vacuum chamber
thin films
solenoid
evaporator
lid
Prior art date
Application number
SU7502141197A
Other languages
Russian (ru)
Inventor
Л.П. Саблев
В.А. Осипов
Р.И. Ступак
Original Assignee
Предприятие П/Я В-8851
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Предприятие П/Я В-8851 filed Critical Предприятие П/Я В-8851
Priority to SU7502141197A priority Critical patent/SU563826A1/en
Application granted granted Critical
Publication of SU563826A1 publication Critical patent/SU563826A1/en

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  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Description

Через соленоид 7 пропускаетс  ток, создающий магнитное поле 20-50 Э. На камеру 1 подаетс  напр жение 40-80 В относительно катода 4, на крынку 2-30 В. При этих параметрах конфигураци  магнитных полей имеет вид, показанный на фиг. 2. Силовые линии 10 пол  соленоида 6 вход т в крышку 2, силовые линии 11 пол  соленоида 7 имеют преобладающую по величине составл ющую, параллельную внутренней поверхности камеры 1. При такой конфигурации магнитных полей электронный ток (ток дуги) стремитс двигатьс  по силовым лини м пол . Кратковременным касанием катода 4 поджигающим электродом 5 возбуждаетс  электрическа  дуга, В парах металла дуга горит при сколь угодно низком давлении остато ных газов. Напр жение на электродах дуги устанавливаетс  близким к катод ному падению потенциала, так как падение .напр жени  на положительном столбе вакуумной дуги незначительно. Напыление испаренного с катода 4 металла происходит потоком металлических ионов, отражакхцихс  от потенВThrough the solenoid 7, a current is generated that creates a magnetic field of 20-50 E. A voltage of 40–80 V relative to cathode 4 is applied to chamber 1, and 2–30 V to valve. With these parameters, the configuration of the magnetic fields is as shown in FIG. 2. Power lines 10 the field of the solenoid 6 are included in cover 2, power lines 11 the fields of the solenoid 7 have a predominant component parallel to the inner surface of chamber 1. With this configuration of magnetic fields, the electronic current (arc current) tends to move along the power lines the floor A short-time contact of the cathode 4 by the igniting electrode 5 initiates an electric arc. In metal vapor, the arc burns at an arbitrarily low pressure of the residual gases. The voltage across the arc electrodes is established close to the cathode potential drop, since the voltage drop across the positive column of the vacuum arc is insignificant. The evaporation of the metal evaporated from the cathode 4 occurs through the flow of metal ions, which reflect from the potential

Claims (1)

60-806 ие.1 циального барьера, образованного скрещенными И и И пол ми. Микрочастицы инейтральные атомы распростран ющиес  промолинейно с поверхности катода 4, попадают на камеру 1 , поскольку электрическое поле на них не действует. Формула изобретени  Устройство дл  нанесени  тонких пленок, содержащее вакуумную камеру и крышку, электроизолированные между собой и выполненные из немагнитных материалов, электродуговой испаритель, размещенный в вакуумной камере, и соленоид , размещенный на крышке, отличающеес  тем, что, с целью повышени  качества тонких пленок, оно снабжено дополнительным соленоидом, установленным снаружи вакуумной камеры соосно соленоиду электродугового испарител  и включенным встречно с ним, а вакуумна  камера снабжена электроизолированным экраном, установленным внутри нее напротив электродугового испарител .60-806 and one of the 1 st social barrier formed by the crossed AND and and Fields. The microparticles, the neutral atoms propagating promolyno from the surface of the cathode 4, fall on chamber 1, since the electric field does not affect them. Apparatus for applying thin films comprising a vacuum chamber and a lid, electrically insulated between themselves and made of non-magnetic materials, an electric arc evaporator placed in a vacuum chamber, and a solenoid placed on the lid, characterized in that, in order to improve the quality of thin films, it is equipped with an additional solenoid installed outside the vacuum chamber coaxially with the solenoid of the electric arc evaporator and connected opposite it, and the vacuum chamber is equipped with an electrically insulated screen Mr set inside an arc in front of the evaporator.
SU7502141197A 1975-06-04 1975-06-04 Device for depositing thin films SU563826A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
SU7502141197A SU563826A1 (en) 1975-06-04 1975-06-04 Device for depositing thin films

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SU7502141197A SU563826A1 (en) 1975-06-04 1975-06-04 Device for depositing thin films

Publications (1)

Publication Number Publication Date
SU563826A1 true SU563826A1 (en) 1978-03-05

Family

ID=20621708

Family Applications (1)

Application Number Title Priority Date Filing Date
SU7502141197A SU563826A1 (en) 1975-06-04 1975-06-04 Device for depositing thin films

Country Status (1)

Country Link
SU (1) SU563826A1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2485863A1 (en) * 1980-06-25 1981-12-31 Axenov Ivan VACUUM ARC PLASMA DEVICE
FR2524245A1 (en) * 1982-03-22 1983-09-30 Axenov Ivan Arc plasma gun - with coaxial electromagnet facing cathode inside plasma guide carrying focusing solenoid
US6103074A (en) * 1998-02-14 2000-08-15 Phygen, Inc. Cathode arc vapor deposition method and apparatus
US9136794B2 (en) 2011-06-22 2015-09-15 Research Triangle Institute, International Bipolar microelectronic device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2485863A1 (en) * 1980-06-25 1981-12-31 Axenov Ivan VACUUM ARC PLASMA DEVICE
WO1982000075A1 (en) * 1980-06-25 1982-01-07 V Khoroshikh Vacuum arc plasma device
US4551221A (en) * 1980-06-25 1985-11-05 Axenov Ivan I Vacuum-arc plasma apparatus
DE3152131C2 (en) * 1980-06-25 1986-09-04 Ivan Ivanovič Char'kov Aksenov Vacuum arc plasma system
FR2524245A1 (en) * 1982-03-22 1983-09-30 Axenov Ivan Arc plasma gun - with coaxial electromagnet facing cathode inside plasma guide carrying focusing solenoid
US6103074A (en) * 1998-02-14 2000-08-15 Phygen, Inc. Cathode arc vapor deposition method and apparatus
US9136794B2 (en) 2011-06-22 2015-09-15 Research Triangle Institute, International Bipolar microelectronic device

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