SU364075A1 - DISCRETE PHASOVER - Google Patents

Description

one

The invention relates to radio engineering and can be used in various devices, HanpHjMep in antenna systems with phase-phase scanning of the radiation pattern, in matched compression filters of phase-shifted signals and others.

The known discrete phase shifters, made in the form of a piezoelectric delay line of elastic surface waves (UHF), on which the emitting and receiving transducers are located, do not provide a high accuracy of setting the phase shift between the emitting and partial receiving transducers located at the same distance from

In order to eliminate this drawback, a thin metal film of a stepped form is applied to the surface of the piezoelectric crystal of the proposed phase shifter, with the step pin corresponding to the required phase out.

When using a single receiving converter, a semiconductor film is applied between it and a metal film of a stepped form, on one side of which there is a common ohmic contact, and on the other side - a set of partial ohmic contacts connected to a source of control signals.

FIG. 1 shows schematically the proposed discrete phase shifter with a single receiving transducer; in fig. 2 - the same, with partial receiving converters.

On the piezoelectric crystal (plate) / deposited a thin metal coating of 2 steps with k steps, with the step pin D / corresponds to the required discrete phase. At the edges of the crystal (plate) 1, the input 3 and output 4 lattice transducers are located for exciting and receiving an overhead transducer. Absorbers 5 are used to absorb the VFR reflected from the edges of the crystal.

In the central part of the crystal, a semiconductor epitaxial partitioned film 6 is applied, with which one common high-voltage electrode 7 and a system of separate high-voltage electrodes 8, which are intended to feed each of the sections (a, b, k- /, k of control voltage 6), are in contact fy. Metal terminals 9 are used to connect the discrete phase shifter to external electrical circuits.

To output one of the k partial waves having the required phase shift in the phase shifter with a single receiving transducer, gating is used, based on the effect of electronic amplification or attenuation of the UPV in the semiconductor film cover at the external switching level of the pattern according to sign (see Fig. 1 ).

At delivery to the input terminals of the electric signal of the frequency / of the input transducer 3, completely in the form of a grid of zero-wave acoustic emitters arranged in increments

, - 2 - 2/0

where I - the wavelength with a frequency of fol

The UR- velocity of the unregular WAVE, excites in a piezoelectric crystal / elastic wave, which, passing through a stepped metal coating 2, expands on k partial elastic waves, it turns out that its strictly defined phase shifts.

Spread Through a semiconductor film coating, the elastic wave is amplified by taking energy away from supersonic carrier-drift carriers in the semiconductor when connected to the high-voltage control-voltage electrode with a sign corresponding to the UPV gain. The amplified partial ultrasonic wave arrives at the receiving, opposite-side transducer 4, which converts the energy of the elastic mechanical oscillation into the energy of an electrical signal taken from the contact terminals 9.

The c / g phase shifter of the partial receiving transducers (see Fig. 2) works in the same way, only partial elastic waves, without augmenting or weakening, are received by the receiving transducers, and the choice of the desired phase is performed by switching electrical signals with external electronic keys.

Subject invention

Claims (2)

1. A discrete phase shifter made in the form of a piezoelectric delay line of elastic surface waves, on which radiating and receiving transducers are located, characterized in that, in order to ensure high accuracy of the phase shift between emitting and partial receiving transducers located on the same distance from the radiating, a thin metal film of a stepped form is applied to the surface of the piezoelectric crystal, with the step size corresponding to the required discrete phase. 2. The discrete phase shifter according to claim 1, characterized in that a semiconductor epitaxial sectioned film is applied between a single receiving transducer and a metal film of a stepped form, On one side of which there is a common ohmic contact, and on the other side there is a set of partial ohmic contacts connected to a source of control signals.