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SG85093A1 - Apparatus and method for polymer removal after metal etching in a plasma reactor - Google Patents

Apparatus and method for polymer removal after metal etching in a plasma reactor

Info

Publication number
SG85093A1
SG85093A1 SG9800046A SG1998000046A SG85093A1 SG 85093 A1 SG85093 A1 SG 85093A1 SG 9800046 A SG9800046 A SG 9800046A SG 1998000046 A SG1998000046 A SG 1998000046A SG 85093 A1 SG85093 A1 SG 85093A1
Authority
SG
Singapore
Prior art keywords
plasma reactor
metal etching
polymer removal
polymer
removal
Prior art date
Application number
SG9800046A
Inventor
Mei Sheng Zhou
Xuechun Dai
Su Ping Jennifer Teong
Original Assignee
Chartered Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Chartered Semiconductor Mfg filed Critical Chartered Semiconductor Mfg
Publication of SG85093A1 publication Critical patent/SG85093A1/en

Links

SG9800046A 1997-03-07 1998-01-06 Apparatus and method for polymer removal after metal etching in a plasma reactor SG85093A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US81355297A 1997-03-07 1997-03-07

Publications (1)

Publication Number Publication Date
SG85093A1 true SG85093A1 (en) 2001-12-19

Family

ID=25212709

Family Applications (1)

Application Number Title Priority Date Filing Date
SG9800046A SG85093A1 (en) 1997-03-07 1998-01-06 Apparatus and method for polymer removal after metal etching in a plasma reactor

Country Status (1)

Country Link
SG (1) SG85093A1 (en)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5007981A (en) * 1989-02-27 1991-04-16 Hitachi, Ltd. Method of removing residual corrosive compounds by plasma etching followed by washing
US5567574A (en) * 1995-01-10 1996-10-22 Mitsubishi Gas Chemical Company, Inc. Removing agent composition for photoresist and method of removing
US5630904A (en) * 1994-03-28 1997-05-20 Mitsubishi Gas Chemical Co., Inc. Stripping and cleaning agent for removing dry-etching and photoresist residues from a semiconductor substrate, and a method for forming a line pattern using the stripping and cleaning agent
US5759751A (en) * 1996-02-08 1998-06-02 Nec Corporation Method of peeling photo-resist layer without damage to metal wiring

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5007981A (en) * 1989-02-27 1991-04-16 Hitachi, Ltd. Method of removing residual corrosive compounds by plasma etching followed by washing
US5630904A (en) * 1994-03-28 1997-05-20 Mitsubishi Gas Chemical Co., Inc. Stripping and cleaning agent for removing dry-etching and photoresist residues from a semiconductor substrate, and a method for forming a line pattern using the stripping and cleaning agent
US5567574A (en) * 1995-01-10 1996-10-22 Mitsubishi Gas Chemical Company, Inc. Removing agent composition for photoresist and method of removing
US5759751A (en) * 1996-02-08 1998-06-02 Nec Corporation Method of peeling photo-resist layer without damage to metal wiring

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