SG68636A1 - Dual band infrared detector using step multiquantum wells with superlattice barriers - Google Patents
Dual band infrared detector using step multiquantum wells with superlattice barriersInfo
- Publication number
- SG68636A1 SG68636A1 SG1997003601A SG1997003601A SG68636A1 SG 68636 A1 SG68636 A1 SG 68636A1 SG 1997003601 A SG1997003601 A SG 1997003601A SG 1997003601 A SG1997003601 A SG 1997003601A SG 68636 A1 SG68636 A1 SG 68636A1
- Authority
- SG
- Singapore
- Prior art keywords
- infrared detector
- dual band
- band infrared
- multiquantum wells
- superlattice
- Prior art date
Links
- 230000004888 barrier function Effects 0.000 title 1
- 230000009977 dual effect Effects 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
- H10F77/146—Superlattices; Multiple quantum well structures
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Light Receiving Elements (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SG1997003601A SG68636A1 (en) | 1997-09-27 | 1997-09-27 | Dual band infrared detector using step multiquantum wells with superlattice barriers |
| PCT/SG1998/000075 WO1999017341A2 (en) | 1997-09-27 | 1998-09-25 | Dual band infrared detector using step multiquantum wells with superlattice barriers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SG1997003601A SG68636A1 (en) | 1997-09-27 | 1997-09-27 | Dual band infrared detector using step multiquantum wells with superlattice barriers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG68636A1 true SG68636A1 (en) | 1999-11-16 |
Family
ID=20429752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG1997003601A SG68636A1 (en) | 1997-09-27 | 1997-09-27 | Dual band infrared detector using step multiquantum wells with superlattice barriers |
Country Status (2)
| Country | Link |
|---|---|
| SG (1) | SG68636A1 (en) |
| WO (1) | WO1999017341A2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100479202C (en) * | 2006-12-27 | 2009-04-15 | 中国科学院上海技术物理研究所 | Resonance tunnel penetration enhanced indium gallium arsenic/gallium arsenic quanta trap infrared detector |
| CN113299778B (en) * | 2021-05-26 | 2022-08-02 | 哈尔滨工业大学 | Bismuth selenide/bismuth telluride superlattice infrared dual-band detector and preparation method thereof |
| CN115911153A (en) * | 2022-11-09 | 2023-04-04 | 电子科技大学 | A kind of infrared detector and preparation method thereof |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5077593A (en) * | 1989-12-27 | 1991-12-31 | Hughes Aircraft Company | Dark current-free multiquantum well superlattice infrared detector |
| CA2091053A1 (en) * | 1990-10-31 | 1992-05-01 | John W. Little, Jr. | Miniband transport quantum well infrared detector |
| IL106130A (en) * | 1992-06-30 | 1996-10-19 | Martin Marietta Corp | Semiconductor miniband transport quantum well detector and a method for detecting electromagnetic radiation |
-
1997
- 1997-09-27 SG SG1997003601A patent/SG68636A1/en unknown
-
1998
- 1998-09-25 WO PCT/SG1998/000075 patent/WO1999017341A2/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO1999017341A2 (en) | 1999-04-08 |
| WO1999017341A3 (en) | 1999-11-04 |
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