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SG2014008841A - Overlay targets with orthogonal underlayer dummyfill - Google Patents

Overlay targets with orthogonal underlayer dummyfill

Info

Publication number
SG2014008841A
SG2014008841A SG2014008841A SG2014008841A SG2014008841A SG 2014008841 A SG2014008841 A SG 2014008841A SG 2014008841 A SG2014008841 A SG 2014008841A SG 2014008841 A SG2014008841 A SG 2014008841A SG 2014008841 A SG2014008841 A SG 2014008841A
Authority
SG
Singapore
Prior art keywords
overlay
dummyfill
target
orthogonal
underlayer
Prior art date
Application number
SG2014008841A
Inventor
Nuriel Amir
Guy Cohen
Vladimir Levinski
Michael Adel
Original Assignee
Kla Tencor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kla Tencor Corp filed Critical Kla Tencor Corp
Publication of SG2014008841A publication Critical patent/SG2014008841A/en

Links

Classifications

    • H10P76/2041—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark
    • H10W46/00—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Engineering & Computer Science (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The disclosure is directed to designing and using an overlay target with orthogonal underlayer dummyfill. According to various embodiments, an overlay target may include one or more segmented overlay pattern elements forming at least one overlay target structure. The overlay target may further include one or more inactive pattern elements forming at least one dummyfill target structure. Each of the one or more inactive pattern elements may include dummyfill segmented along an axis orthogonal to a segmentation axis of at least one proximately disposed overlay pattern element. In some embodiments, each of the target structures or layers may be formed from a separate process layer successively disposed upon a substrate, such as a silicon wafer. In some embodiments, the overlay and dummyfill target structures may be twofold or fourfold rotationally symmetric to allow for certain manufacturing or metrology advantages.
SG2014008841A 2012-05-22 2013-05-21 Overlay targets with orthogonal underlayer dummyfill SG2014008841A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201261650269P 2012-05-22 2012-05-22
PCT/US2013/042089 WO2013177208A1 (en) 2012-05-22 2013-05-21 Overlay targets with orthogonal underlayer dummyfill

Publications (1)

Publication Number Publication Date
SG2014008841A true SG2014008841A (en) 2015-01-29

Family

ID=49624297

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2014008841A SG2014008841A (en) 2012-05-22 2013-05-21 Overlay targets with orthogonal underlayer dummyfill

Country Status (5)

Country Link
JP (2) JP6339067B2 (en)
KR (2) KR102272361B1 (en)
CN (1) CN103814429A (en)
SG (1) SG2014008841A (en)
WO (1) WO2013177208A1 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111948239B (en) * 2015-04-28 2024-01-12 科磊股份有限公司 Computationally efficient X-ray based overlay measurement system and method
KR102344379B1 (en) * 2015-05-13 2021-12-28 삼성전자주식회사 Semiconductor devices having shielding patterns
KR102454206B1 (en) * 2016-03-14 2022-10-12 삼성전자주식회사 Wafer alignment marks and method for measuring errors of the wafer alignment marks
IL270171B2 (en) * 2017-04-28 2023-12-01 Asml Netherlands Bv Metrology method and apparatus and associated computer program
US10677588B2 (en) * 2018-04-09 2020-06-09 Kla-Tencor Corporation Localized telecentricity and focus optimization for overlay metrology
WO2021225579A1 (en) * 2020-05-05 2021-11-11 Kla Corporation Metrology targets for high topography semiconductor stacks
KR102838579B1 (en) 2020-12-10 2025-07-28 삼성전자주식회사 Semiconductor devices
KR102566129B1 (en) * 2022-01-20 2023-08-16 (주) 오로스테크놀로지 Overlay mark forming moire pattern, overlay measurement method and semiconductor device manufacturing method using the same
US20250272812A1 (en) * 2024-02-26 2025-08-28 Kla Corporation Side-by-side off-center die overlay target

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2829211B2 (en) * 1993-01-07 1998-11-25 株式会社東芝 Misalignment measurement method
JPH07226369A (en) * 1994-02-09 1995-08-22 Nikon Corp Alignment method and device
JP4038320B2 (en) * 2000-04-17 2008-01-23 株式会社東芝 Semiconductor integrated device
JP2002124458A (en) * 2000-10-18 2002-04-26 Nikon Corp Overlay inspection apparatus and overlay inspection method
US6716559B2 (en) * 2001-12-13 2004-04-06 International Business Machines Corporation Method and system for determining overlay tolerance
JP4525067B2 (en) * 2003-12-12 2010-08-18 株式会社ニコン Misalignment detection mark
US20050286052A1 (en) * 2004-06-23 2005-12-29 Kevin Huggins Elongated features for improved alignment process integration
US7526749B2 (en) * 2005-10-31 2009-04-28 Kla-Tencor Technologies Corporation Methods and apparatus for designing and using micro-targets in overlay metrology
US7291562B2 (en) * 2005-12-09 2007-11-06 Yung-Tin Chen Method to form topography in a deposited layer above a substrate
NL2003404A (en) * 2008-09-16 2010-03-17 Asml Netherlands Bv Inspection method and apparatus, substrate, lithographic apparatus, lithographic processing cell and device manufacturing method.
US8804137B2 (en) * 2009-08-31 2014-08-12 Kla-Tencor Corporation Unique mark and method to determine critical dimension uniformity and registration of reticles combined with wafer overlay capability
NL2006228A (en) * 2010-03-17 2011-09-20 Asml Netherlands Bv Alignment mark, substrate, set of patterning devices, and device manufacturing method.
US9927718B2 (en) * 2010-08-03 2018-03-27 Kla-Tencor Corporation Multi-layer overlay metrology target and complimentary overlay metrology measurement systems

Also Published As

Publication number Publication date
KR20150013428A (en) 2015-02-05
JP6570018B2 (en) 2019-09-04
KR102272361B1 (en) 2021-07-05
JP2015520377A (en) 2015-07-16
JP6339067B2 (en) 2018-06-06
KR102473825B1 (en) 2022-12-02
JP2018128699A (en) 2018-08-16
WO2013177208A1 (en) 2013-11-28
KR20210086716A (en) 2021-07-08
CN103814429A (en) 2014-05-21

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