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SG2013038336A - Copper-rhodium alloy wire for connecting semiconductor device - Google Patents

Copper-rhodium alloy wire for connecting semiconductor device

Info

Publication number
SG2013038336A
SG2013038336A SG2013038336A SG2013038336A SG2013038336A SG 2013038336 A SG2013038336 A SG 2013038336A SG 2013038336 A SG2013038336 A SG 2013038336A SG 2013038336 A SG2013038336 A SG 2013038336A SG 2013038336 A SG2013038336 A SG 2013038336A
Authority
SG
Singapore
Prior art keywords
copper
semiconductor device
alloy wire
rhodium alloy
connecting semiconductor
Prior art date
Application number
SG2013038336A
Inventor
Hiroyuki Amano
Michitaka Mikami
Junichi Okazaki
takuya Hamamoto
Shinichiro Nakashima
Tsutomu Yamashita
Syuichi Mitoma
Kosuke Ono
Bin Liu
Hiroyuki SHIGYOU
Original Assignee
Tanaka Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Electronics Ind filed Critical Tanaka Electronics Ind
Publication of SG2013038336A publication Critical patent/SG2013038336A/en

Links

Classifications

    • H10W72/015—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45644—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/4554—Coating
    • H01L2224/45599—Material
    • H01L2224/456—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45663—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45664—Palladium (Pd) as principal constituent
    • H10W72/07533—
    • H10W72/50—
    • H10W72/522—
    • H10W72/536—
    • H10W72/552—
    • H10W72/555—
    • H10W72/952—
SG2013038336A 2012-10-03 2013-05-16 Copper-rhodium alloy wire for connecting semiconductor device SG2013038336A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012221738A JP5213146B1 (en) 2012-10-03 2012-10-03 Copper rhodium alloy wire for connecting semiconductor devices

Publications (1)

Publication Number Publication Date
SG2013038336A true SG2013038336A (en) 2014-05-29

Family

ID=48778646

Family Applications (1)

Application Number Title Priority Date Filing Date
SG2013038336A SG2013038336A (en) 2012-10-03 2013-05-16 Copper-rhodium alloy wire for connecting semiconductor device

Country Status (4)

Country Link
JP (1) JP5213146B1 (en)
CN (1) CN103715111B (en)
SG (1) SG2013038336A (en)
TW (1) TWI479581B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12300658B2 (en) 2016-06-20 2025-05-13 Nippon Micrometal Corporation Copper alloy bonding wire for semiconductor devices

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106257978B (en) * 2015-04-22 2019-09-24 日立金属株式会社 Metal particle and its manufacturing method, coated metal particle, metal powder
CN104988348A (en) * 2015-05-27 2015-10-21 安徽捷澳电子有限公司 Ultra-fine platinum-rhodium flat wire and fabrication method thereof
WO2016203659A1 (en) * 2015-06-15 2016-12-22 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device
WO2017013796A1 (en) 2015-07-23 2017-01-26 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device
JP6710141B2 (en) * 2016-10-14 2020-06-17 田中電子工業株式会社 Copper alloy wire for ball bonding
JP6452661B2 (en) * 2016-11-11 2019-01-16 日鉄マイクロメタル株式会社 Bonding wires for semiconductor devices
KR102187539B1 (en) 2017-12-28 2020-12-07 닛데쓰마이크로메탈가부시키가이샤 Bonding wire for semiconductor devices
JP6869920B2 (en) * 2018-04-02 2021-05-12 田中電子工業株式会社 Precious metal-coated silver wire for ball bonding and its manufacturing method, and semiconductor device using precious metal-coated silver wire for ball bonding and its manufacturing method
CN218585983U (en) * 2022-07-28 2023-03-07 日月光半导体制造股份有限公司 Semiconductor packaging device
CN119162485A (en) * 2023-06-19 2024-12-20 中国石油天然气集团有限公司 A copper alloy containing rhodium and its preparation method and application

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6515373B2 (en) * 2000-12-28 2003-02-04 Infineon Technologies Ag Cu-pad/bonded/Cu-wire with self-passivating Cu-alloys
DE10392428T5 (en) * 2002-03-12 2005-06-30 The Furukawa Electric Co., Ltd. High strength leaded copper alloy wire with excellent resistance to stress relaxation
US7198983B2 (en) * 2004-03-08 2007-04-03 Hitachi Metals, Ltd. Solder ball excellent in micro-adhesion preventing properties and wetting properties and method for preventing the micro-adhesion of solder balls
DE102005028951B4 (en) * 2005-06-22 2018-05-30 Infineon Technologies Ag Arrangement for the electrical connection of a semiconductor circuit arrangement with an external contact device
JP4691533B2 (en) * 2006-08-31 2011-06-01 新日鉄マテリアルズ株式会社 Copper alloy bonding wire for semiconductor devices
JP4896850B2 (en) * 2006-11-28 2012-03-14 株式会社神戸製鋼所 Cu wiring of semiconductor device and manufacturing method thereof
JP4482605B1 (en) * 2009-01-23 2010-06-16 田中電子工業株式会社 High purity Cu bonding wire
CN101882562B (en) * 2009-05-08 2012-02-22 日月光封装测试(上海)有限公司 Wire jointing device for semiconductor packaging and method thereof
JP2011222882A (en) * 2010-04-14 2011-11-04 Tatsuta Electric Wire & Cable Co Ltd Bonding wire

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12300658B2 (en) 2016-06-20 2025-05-13 Nippon Micrometal Corporation Copper alloy bonding wire for semiconductor devices

Also Published As

Publication number Publication date
TWI479581B (en) 2015-04-01
JP2014075458A (en) 2014-04-24
CN103715111B (en) 2016-05-25
TW201415566A (en) 2014-04-16
CN103715111A (en) 2014-04-09
JP5213146B1 (en) 2013-06-19

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