SG11202107817XA - Lid assembly apparatus and methods for substrate processing chambers - Google Patents
Lid assembly apparatus and methods for substrate processing chambersInfo
- Publication number
- SG11202107817XA SG11202107817XA SG11202107817XA SG11202107817XA SG11202107817XA SG 11202107817X A SG11202107817X A SG 11202107817XA SG 11202107817X A SG11202107817X A SG 11202107817XA SG 11202107817X A SG11202107817X A SG 11202107817XA SG 11202107817X A SG11202107817X A SG 11202107817XA
- Authority
- SG
- Singapore
- Prior art keywords
- methods
- substrate processing
- processing chambers
- lid assembly
- assembly apparatus
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IN201941009365 | 2019-03-11 | ||
| PCT/US2020/019801 WO2020185401A1 (en) | 2019-03-11 | 2020-02-26 | Lid assembly apparatus and methods for substrate processing chambers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202107817XA true SG11202107817XA (en) | 2021-09-29 |
Family
ID=72425081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202107817XA SG11202107817XA (en) | 2019-03-11 | 2020-02-26 | Lid assembly apparatus and methods for substrate processing chambers |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11598004B2 (en) |
| JP (1) | JP7520868B2 (en) |
| KR (2) | KR102853172B1 (en) |
| CN (1) | CN113396240A (en) |
| SG (1) | SG11202107817XA (en) |
| TW (2) | TWI880820B (en) |
| WO (1) | WO2020185401A1 (en) |
Families Citing this family (7)
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| CN114586130B (en) * | 2019-10-14 | 2025-05-06 | 朗姆研究公司 | Double air chamber fractal sprinkler |
| CN111501024A (en) * | 2020-05-08 | 2020-08-07 | Tcl华星光电技术有限公司 | Vapor deposition apparatus |
| US11694908B2 (en) * | 2020-10-22 | 2023-07-04 | Applied Materials, Inc. | Gasbox for semiconductor processing chamber |
| CN113038723B (en) * | 2021-03-22 | 2022-03-25 | 河南省科学院应用物理研究所有限公司 | Even liquid processing apparatus of printed circuit board |
| US20230374660A1 (en) * | 2022-05-17 | 2023-11-23 | Applied Materials, Inc. | Hardware to uniformly distribute active species for semiconductor film processing |
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-
2020
- 2020-02-26 US US16/802,284 patent/US11598004B2/en active Active
- 2020-02-26 CN CN202080012897.3A patent/CN113396240A/en active Pending
- 2020-02-26 WO PCT/US2020/019801 patent/WO2020185401A1/en not_active Ceased
- 2020-02-26 KR KR1020217032327A patent/KR102853172B1/en active Active
- 2020-02-26 SG SG11202107817XA patent/SG11202107817XA/en unknown
- 2020-02-26 JP JP2021554712A patent/JP7520868B2/en active Active
- 2020-02-26 KR KR1020257028355A patent/KR20250133987A/en active Pending
- 2020-03-05 TW TW113127046A patent/TWI880820B/en active
- 2020-03-05 TW TW109107200A patent/TWI851673B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| US20200291522A1 (en) | 2020-09-17 |
| KR20250133987A (en) | 2025-09-09 |
| TW202102716A (en) | 2021-01-16 |
| KR102853172B1 (en) | 2025-08-29 |
| TW202446986A (en) | 2024-12-01 |
| JP7520868B2 (en) | 2024-07-23 |
| KR20210127768A (en) | 2021-10-22 |
| TWI880820B (en) | 2025-04-11 |
| WO2020185401A1 (en) | 2020-09-17 |
| CN113396240A (en) | 2021-09-14 |
| JP2022525108A (en) | 2022-05-11 |
| US11598004B2 (en) | 2023-03-07 |
| TWI851673B (en) | 2024-08-11 |
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