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SG108898A1 - Use of fluorine implantation to form a charge balanced nitrided gate dielectric layer - Google Patents

Use of fluorine implantation to form a charge balanced nitrided gate dielectric layer

Info

Publication number
SG108898A1
SG108898A1 SG200300168A SG200300168A SG108898A1 SG 108898 A1 SG108898 A1 SG 108898A1 SG 200300168 A SG200300168 A SG 200300168A SG 200300168 A SG200300168 A SG 200300168A SG 108898 A1 SG108898 A1 SG 108898A1
Authority
SG
Singapore
Prior art keywords
dielectric layer
gate dielectric
charge balanced
nitrided gate
fluorine implantation
Prior art date
Application number
SG200300168A
Inventor
Mo-Chiun Yu
Shyue-Shyh Lin
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from TW91101311A external-priority patent/TW525264B/en
Priority claimed from US10/351,158 external-priority patent/US6825133B2/en
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of SG108898A1 publication Critical patent/SG108898A1/en

Links

SG200300168A 2002-01-25 2003-01-25 Use of fluorine implantation to form a charge balanced nitrided gate dielectric layer SG108898A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
TW91101311A TW525264B (en) 2002-01-25 2002-01-25 Manufacturing method of gate dielectric layer
US10/351,158 US6825133B2 (en) 2003-01-22 2003-01-22 Use of fluorine implantation to form a charge balanced nitrided gate dielectric layer

Publications (1)

Publication Number Publication Date
SG108898A1 true SG108898A1 (en) 2005-02-28

Family

ID=34576079

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200300168A SG108898A1 (en) 2002-01-25 2003-01-25 Use of fluorine implantation to form a charge balanced nitrided gate dielectric layer

Country Status (1)

Country Link
SG (1) SG108898A1 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5620906A (en) * 1994-02-28 1997-04-15 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device by introducing hydrogen ions
US20020019085A1 (en) * 2000-08-10 2002-02-14 National Science Council Method of forming a gate oxide layer with an improved ability to resist the process damage
US6664172B2 (en) * 2002-01-22 2003-12-16 United Microelectronics Corp. Method of forming a MOS transistor with improved threshold voltage stability

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5620906A (en) * 1994-02-28 1997-04-15 Semiconductor Energy Laboratory Co., Ltd. Method for producing semiconductor device by introducing hydrogen ions
US20020019085A1 (en) * 2000-08-10 2002-02-14 National Science Council Method of forming a gate oxide layer with an improved ability to resist the process damage
US6664172B2 (en) * 2002-01-22 2003-12-16 United Microelectronics Corp. Method of forming a MOS transistor with improved threshold voltage stability

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