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SE9900339L - Prefusion oxidized and wafer bound laser with vertical cavity - Google Patents

Prefusion oxidized and wafer bound laser with vertical cavity

Info

Publication number
SE9900339L
SE9900339L SE9900339A SE9900339A SE9900339L SE 9900339 L SE9900339 L SE 9900339L SE 9900339 A SE9900339 A SE 9900339A SE 9900339 A SE9900339 A SE 9900339A SE 9900339 L SE9900339 L SE 9900339L
Authority
SE
Sweden
Prior art keywords
vcl
wafer
prefusion
oxidized
vertical cavity
Prior art date
Application number
SE9900339A
Other languages
Swedish (sv)
Other versions
SE9900339D0 (en
Inventor
Klaus Streubel
Original Assignee
Mitel Semiconductor Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitel Semiconductor Ab filed Critical Mitel Semiconductor Ab
Publication of SE9900339D0 publication Critical patent/SE9900339D0/en
Publication of SE9900339L publication Critical patent/SE9900339L/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/1838—Reflector bonded by wafer fusion or by an intermediate compound
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Element Separation (AREA)

Abstract

It was proposed to combine two successful VCL technologies, wafer fusion and selective oxidation, in a new way to form a long wavelength VCL. The Al(Ga)As oxidation is performed via fusion channels before the actual wafer fusion step. By doing so, the structure combines the advantages of two different, successful long wavelength VCL structures; the double fused and the single fused, oxygen implanted VCL.
SE9900339A 1998-01-31 1999-02-01 Prefusion oxidized and wafer bound laser with vertical cavity SE9900339L (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9802047A GB2333895B (en) 1998-01-31 1998-01-31 Pre-fusion oxidized and wafer-bonded vertical cavity laser

Publications (2)

Publication Number Publication Date
SE9900339D0 SE9900339D0 (en) 1999-02-01
SE9900339L true SE9900339L (en) 1999-08-01

Family

ID=10826196

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9900339A SE9900339L (en) 1998-01-31 1999-02-01 Prefusion oxidized and wafer bound laser with vertical cavity

Country Status (6)

Country Link
US (1) US20030016714A1 (en)
CA (1) CA2257672A1 (en)
DE (1) DE19903204C2 (en)
FR (1) FR2774517B1 (en)
GB (1) GB2333895B (en)
SE (1) SE9900339L (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6301281B1 (en) * 1998-08-31 2001-10-09 Agilent Technologies, Inc. Semiconductor laser having co-doped distributed bragg reflectors
US6320206B1 (en) * 1999-02-05 2001-11-20 Lumileds Lighting, U.S., Llc Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks
US6280523B1 (en) 1999-02-05 2001-08-28 Lumileds Lighting, U.S., Llc Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting
JP4537658B2 (en) * 2002-02-22 2010-09-01 株式会社リコー Surface emitting laser element, surface emitting laser array using the surface emitting laser element, electrophotographic system, surface emitting laser module, optical communication system, optical interconnection system, and surface emitting laser element manufacturing method
DE10226320A1 (en) * 2002-06-10 2004-01-08 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Selective oxidation of a layer containing an oxidizable material in a vertical component comprises providing the layer with holes to adjust a defined oxidation rate
US20090018407A1 (en) * 2007-03-30 2009-01-15 Searete Llc, A Limited Corporation Of The State Of Delaware Computational user-health testing
CN113193091B (en) * 2020-04-14 2022-05-31 镭昱光电科技(苏州)有限公司 Light emitting diode structure with resonant cavity and manufacturing method thereof
US12362541B2 (en) * 2021-04-30 2025-07-15 Lumentum Operations Llc Methods for incorporating a control structure within a vertical cavity surface emitting laser device cavity
US12334711B2 (en) 2021-05-19 2025-06-17 Mellanox Technologies, Ltd. Fabricating semiconductor devices, such as VCSELs, with an oxide confinement layer

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4115046A1 (en) * 1991-05-08 1992-11-12 Fraunhofer Ges Forschung DIRECT SUBSTRATE BONDING
US5328854A (en) * 1993-03-31 1994-07-12 At&T Bell Laboratories Fabrication of electronic devices with an internal window
JP3766976B2 (en) * 1994-01-20 2006-04-19 セイコーエプソン株式会社 Surface emitting semiconductor laser device and manufacturing method thereof
US5594751A (en) * 1995-06-26 1997-01-14 Optical Concepts, Inc. Current-apertured vertical cavity laser
US5633886A (en) * 1995-08-28 1997-05-27 Motorola Short wavelength VCSEL with Al-free active region
FR2739230B1 (en) * 1995-09-22 1997-12-19 Oudar Jean Louis VERTICAL CAVITY LASER EMISSION COMPONENT WITH SURFACE EMISSION AT A WAVELENGTH BETWEEN 1.3 AND 1.5 MU M AND PROCESS FOR ITS REALIZATION
EP0784363B1 (en) * 1995-12-26 2000-10-11 Nippon Telegraph and Telephone Corporation Vertical-cavity surface-emitting laser and method for manufacturing the same
US5985687A (en) * 1996-04-12 1999-11-16 The Regents Of The University Of California Method for making cleaved facets for lasers fabricated with gallium nitride and other noncubic materials
US5729566A (en) * 1996-06-07 1998-03-17 Picolight Incorporated Light emitting device having an electrical contact through a layer containing oxidized material
WO1998008278A1 (en) * 1996-08-21 1998-02-26 W.L. Gore & Associates, Inc. Vertical cavity surface emitting lasers using patterned wafer fusion
US5835521A (en) * 1997-02-10 1998-11-10 Motorola, Inc. Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication
WO1998048492A1 (en) * 1997-04-23 1998-10-29 Honeywell Inc. Electronic devices formed from pre-patterned structures that are bonded
US5920766A (en) * 1998-01-07 1999-07-06 Xerox Corporation Red and blue stacked laser diode array by wafer fusion

Also Published As

Publication number Publication date
US20030016714A1 (en) 2003-01-23
FR2774517B1 (en) 2002-02-01
GB9802047D0 (en) 1998-03-25
DE19903204A1 (en) 1999-08-12
CA2257672A1 (en) 1999-07-31
DE19903204C2 (en) 2002-06-13
GB2333895B (en) 2003-02-26
FR2774517A1 (en) 1999-08-06
GB2333895A (en) 1999-08-04
SE9900339D0 (en) 1999-02-01

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