SE9602993D0 - A bipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiC - Google Patents
A bipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiCInfo
- Publication number
- SE9602993D0 SE9602993D0 SE9602993A SE9602993A SE9602993D0 SE 9602993 D0 SE9602993 D0 SE 9602993D0 SE 9602993 A SE9602993 A SE 9602993A SE 9602993 A SE9602993 A SE 9602993A SE 9602993 D0 SE9602993 D0 SE 9602993D0
- Authority
- SE
- Sweden
- Prior art keywords
- sic
- semiconductor device
- junction
- layers
- producing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/01—Manufacture or treatment
- H10D12/031—Manufacture or treatment of IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/043—Manufacture or treatment of planar diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/051—Manufacture or treatment of Schottky diodes
Landscapes
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9602993A SE9602993D0 (sv) | 1996-08-16 | 1996-08-16 | A bipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiC |
| US08/706,264 US5831287A (en) | 1996-08-16 | 1996-09-04 | Bipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiC |
| PCT/SE1997/001137 WO1998008259A1 (en) | 1996-08-16 | 1997-06-25 | A BIPOLAR SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR LAYERS OF SiC AND A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE OF SiC |
| JP51064398A JP4626893B2 (ja) | 1996-08-16 | 1997-06-25 | ＳｉＣから構成された半導体層を有するバイポーラ半導体デバイスおよびＳｉＣから構成された半導体デバイスを製造する方法 |
| EP97932077A EP0958610B1 (en) | 1996-08-16 | 1997-06-25 | A BIPOLAR SEMICONDUCTOR DEVICE HAVING SEMICONDUCTOR LAYERS OF SiC AND A METHOD FOR PRODUCING A SEMICONDUCTOR DEVICE OF SiC |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9602993A SE9602993D0 (sv) | 1996-08-16 | 1996-08-16 | A bipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiC |
| US08/706,264 US5831287A (en) | 1996-08-16 | 1996-09-04 | Bipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiC |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE9602993D0 true SE9602993D0 (sv) | 1996-08-16 |
Family
ID=26662733
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9602993A SE9602993D0 (sv) | 1996-08-16 | 1996-08-16 | A bipolar semiconductor device having semiconductor layers of SiC and a method for producing a semiconductor device of SiC |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5831287A (sv) |
| EP (1) | EP0958610B1 (sv) |
| SE (1) | SE9602993D0 (sv) |
| WO (1) | WO1998008259A1 (sv) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3955396B2 (ja) * | 1998-09-17 | 2007-08-08 | 株式会社ルネサステクノロジ | 半導体サージ吸収素子 |
| JP2001177114A (ja) * | 1999-12-17 | 2001-06-29 | Fuji Electric Co Ltd | 半導体装置 |
| US7061021B2 (en) * | 2003-05-01 | 2006-06-13 | The University Of South Carolina | System and method for fabricating diodes |
| US7408235B2 (en) * | 2003-07-08 | 2008-08-05 | Los Alamos National Security, Llc | Quantum coherent switch utilizing commensurate nanoelectrode and charge density periodicities |
| CN101271871B (zh) * | 2003-08-22 | 2011-05-25 | 关西电力株式会社 | 半导体装置及制造方法、使用该半导体装置的电力变换装置 |
| US8901699B2 (en) | 2005-05-11 | 2014-12-02 | Cree, Inc. | Silicon carbide junction barrier Schottky diodes with suppressed minority carrier injection |
| KR101529331B1 (ko) | 2006-08-17 | 2015-06-16 | 크리 인코포레이티드 | 고전력 절연 게이트 바이폴라 트랜지스터 |
| US8835987B2 (en) | 2007-02-27 | 2014-09-16 | Cree, Inc. | Insulated gate bipolar transistors including current suppressing layers |
| US8232558B2 (en) | 2008-05-21 | 2012-07-31 | Cree, Inc. | Junction barrier Schottky diodes with current surge capability |
| US8294507B2 (en) * | 2009-05-08 | 2012-10-23 | Cree, Inc. | Wide bandgap bipolar turn-off thyristor having non-negative temperature coefficient and related control circuits |
| US9117739B2 (en) | 2010-03-08 | 2015-08-25 | Cree, Inc. | Semiconductor devices with heterojunction barrier regions and methods of fabricating same |
| JP5872327B2 (ja) | 2011-03-10 | 2016-03-01 | 株式会社東芝 | 半導体整流素子 |
| US9142662B2 (en) | 2011-05-06 | 2015-09-22 | Cree, Inc. | Field effect transistor devices with low source resistance |
| US9029945B2 (en) | 2011-05-06 | 2015-05-12 | Cree, Inc. | Field effect transistor devices with low source resistance |
| US9673283B2 (en) | 2011-05-06 | 2017-06-06 | Cree, Inc. | Power module for supporting high current densities |
| US9171977B2 (en) * | 2011-06-17 | 2015-10-27 | Cree, Inc. | Optically assist-triggered wide bandgap thyristors having positive temperature coefficients |
| US8723218B2 (en) | 2011-09-08 | 2014-05-13 | The United States Of America, As Represented By The Secretary Of The Navy | Silicon carbide rectifier |
| US9373617B2 (en) | 2011-09-11 | 2016-06-21 | Cree, Inc. | High current, low switching loss SiC power module |
| US8664665B2 (en) | 2011-09-11 | 2014-03-04 | Cree, Inc. | Schottky diode employing recesses for elements of junction barrier array |
| US9640617B2 (en) | 2011-09-11 | 2017-05-02 | Cree, Inc. | High performance power module |
| US8680587B2 (en) | 2011-09-11 | 2014-03-25 | Cree, Inc. | Schottky diode |
| US8618582B2 (en) | 2011-09-11 | 2013-12-31 | Cree, Inc. | Edge termination structure employing recesses for edge termination elements |
| JP6065303B2 (ja) | 2012-06-15 | 2017-01-25 | ローム株式会社 | スイッチングデバイス |
| DE102013210805A1 (de) * | 2013-06-10 | 2014-12-11 | Robert Bosch Gmbh | Leistungshalbleiter |
| US10177228B2 (en) | 2015-01-14 | 2019-01-08 | Mitsubishi Electric Corporation | Semiconductor device and method for manufacturing semiconductor device |
| JP6526981B2 (ja) | 2015-02-13 | 2019-06-05 | ローム株式会社 | 半導体装置および半導体モジュール |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU438364A1 (ru) * | 1972-09-15 | 1976-07-05 | В. И. Павличенко | Диодный источник света на карбтде кремни |
| US4497773A (en) * | 1981-03-03 | 1985-02-05 | Vernitron Corporation | Process and apparatus for shortening the drying stage of a steam sterilization cycle |
| US5243204A (en) * | 1990-05-18 | 1993-09-07 | Sharp Kabushiki Kaisha | Silicon carbide light emitting diode and a method for the same |
| US5043773A (en) * | 1990-06-04 | 1991-08-27 | Advanced Technology Materials, Inc. | Wafer base for silicon carbide semiconductor devices, incorporating alloy substrates |
| US5322802A (en) * | 1993-01-25 | 1994-06-21 | North Carolina State University At Raleigh | Method of fabricating silicon carbide field effect transistor |
| US5396085A (en) * | 1993-12-28 | 1995-03-07 | North Carolina State University | Silicon carbide switching device with rectifying-gate |
| US5385855A (en) * | 1994-02-24 | 1995-01-31 | General Electric Company | Fabrication of silicon carbide integrated circuits |
-
1996
- 1996-08-16 SE SE9602993A patent/SE9602993D0/sv unknown
- 1996-09-04 US US08/706,264 patent/US5831287A/en not_active Expired - Lifetime
-
1997
- 1997-06-25 EP EP97932077A patent/EP0958610B1/en not_active Expired - Lifetime
- 1997-06-25 WO PCT/SE1997/001137 patent/WO1998008259A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| EP0958610A1 (en) | 1999-11-24 |
| EP0958610B1 (en) | 2012-11-14 |
| WO1998008259A1 (en) | 1998-02-26 |
| US5831287A (en) | 1998-11-03 |
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