[go: up one dir, main page]

SE8502974L - Sammansatt transistor med sasom gemensam kollektor tjenande halvledarsubstrat och emitteromraden likformigt fordelade - Google Patents

Sammansatt transistor med sasom gemensam kollektor tjenande halvledarsubstrat och emitteromraden likformigt fordelade

Info

Publication number
SE8502974L
SE8502974L SE8502974A SE8502974A SE8502974L SE 8502974 L SE8502974 L SE 8502974L SE 8502974 A SE8502974 A SE 8502974A SE 8502974 A SE8502974 A SE 8502974A SE 8502974 L SE8502974 L SE 8502974L
Authority
SE
Sweden
Prior art keywords
semiconductor substrate
areas
common collector
transistor
uniformly distributed
Prior art date
Application number
SE8502974A
Other languages
Unknown language ( )
English (en)
Other versions
SE8502974D0 (sv
SE448329B (sv
Inventor
Evgeny Ivanovich Lapitsky
Anatoly Iosifovich Tarasevich
Vladimir Alexandrovich Semin
Vladimir Iliich Kabanets
Original Assignee
Evgeny Ivanovich Lapitsky
Anatoly Iosifovich Tarasevich
Vladimir Alexandrovich Semin
Vladimir Iliich Kabanets
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Evgeny Ivanovich Lapitsky, Anatoly Iosifovich Tarasevich, Vladimir Alexandrovich Semin, Vladimir Iliich Kabanets filed Critical Evgeny Ivanovich Lapitsky
Publication of SE8502974D0 publication Critical patent/SE8502974D0/sv
Publication of SE8502974L publication Critical patent/SE8502974L/sv
Publication of SE448329B publication Critical patent/SE448329B/sv

Links

Classifications

    • H10W20/484—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
SE8502974A 1985-06-12 1985-06-14 Sammansatt transistor med sasom gemensam kollektor tjenande halvledarsubstrat och med bas och emitteromraden likformigt fordelade SE448329B (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19853521059 DE3521059A1 (de) 1985-06-12 1985-06-12 Zusammengesetzter transistor

Publications (3)

Publication Number Publication Date
SE8502974D0 SE8502974D0 (sv) 1985-06-14
SE8502974L true SE8502974L (sv) 1986-12-15
SE448329B SE448329B (sv) 1987-02-09

Family

ID=6273080

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8502974A SE448329B (sv) 1985-06-12 1985-06-14 Sammansatt transistor med sasom gemensam kollektor tjenande halvledarsubstrat och med bas och emitteromraden likformigt fordelade

Country Status (4)

Country Link
DE (1) DE3521059A1 (sv)
FR (1) FR2583924B1 (sv)
NL (1) NL8501980A (sv)
SE (1) SE448329B (sv)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0787219B2 (ja) * 1986-09-09 1995-09-20 三菱電機株式会社 半導体記憶装置
DE3807162A1 (de) * 1987-07-02 1989-01-12 Mitsubishi Electric Corp Halbleiterspeichereinrichtung
US5023693A (en) * 1989-06-06 1991-06-11 Kabushiki Kaisha Toyoda Jidoshokki Seisakusho Transistor with current sensing function

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1297239C2 (de) * 1964-11-11 1975-07-17 Deutsche Itt Industries Gmbh, 7800 Freiburg Leistungstransistor
DE1514008B2 (de) * 1965-04-22 1972-12-07 Deutsche Itt Industries Gmbh, 7800 Freiburg Flaechentransistor
US3544860A (en) * 1968-04-11 1970-12-01 Rca Corp Integrated power output circuit
US3629623A (en) * 1968-11-01 1971-12-21 Nippon Denso Co Composite semiconductor device and semiconductor voltage regulator device for vehicles

Also Published As

Publication number Publication date
FR2583924A1 (fr) 1986-12-26
DE3521059A1 (de) 1986-12-18
SE8502974D0 (sv) 1985-06-14
FR2583924B1 (fr) 1988-05-27
SE448329B (sv) 1987-02-09
NL8501980A (nl) 1987-02-02

Similar Documents

Publication Publication Date Title
EP0279403A3 (en) Vertical mos field effect transistor having a high withstand voltage and a high switching speed
KR890004466B1 (en) Semiconductor device
SE8703269L (sv) Foerbaettrad konstruktion hos sos-transistor
JPS56131955A (en) Semiconductor device
GB1530168A (en) Semiconductor device of the planar epitaxial type
SE8502974L (sv) Sammansatt transistor med sasom gemensam kollektor tjenande halvledarsubstrat och emitteromraden likformigt fordelade
EP0310047A3 (en) Double-diffused mos fet
ATE185451T1 (de) Integrierte schaltung
DE3681231D1 (de) Struktur zur qualitaetspruefung einer substratscheibe aus halbleitermaterial.
SE8900617D0 (sv) Mos-faelteffekttransistorstyrd tyristor
JPS55103746A (en) Semiconductor power supply assembly and method of manufacturing same
DE3677689D1 (de) Schaltungsanordnung fuer die vorspannungsversorgung von feldeffekttransistoren.
JPS5297684A (en) Semiconductor element
ATE36207T1 (de) Basiszelle fuer integrierte verknuepfungsschaltungsfelder.
JPS57181160A (en) Transistor
IT1200647B (it) Transitore composito
SE8800696D0 (sv) Dubbelriktad mos-switch
EP0741422A4 (en) Magnetically controlled logic cell
JPS54138370A (en) Flip chip mounting body
JPS6414960A (en) Semiconductor element
MY110261A (en) Bipolar bump transistor and method of manufacturing the same.
JPS5220773A (en) Semi-conductor element
JPS5721859A (en) Semiconductor device
JPS57197863A (en) Semiconductor integrated circuit device
JPS5335472A (en) Production of semiconductor unit

Legal Events

Date Code Title Description
NUG Patent has lapsed

Ref document number: 8502974-2

Effective date: 19910131

Format of ref document f/p: F