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SE8106453L - PHOTODIOD STRUCTURE WITH T tailored SPECTRAL SENSITIVITY - Google Patents

PHOTODIOD STRUCTURE WITH T tailored SPECTRAL SENSITIVITY

Info

Publication number
SE8106453L
SE8106453L SE8106453A SE8106453A SE8106453L SE 8106453 L SE8106453 L SE 8106453L SE 8106453 A SE8106453 A SE 8106453A SE 8106453 A SE8106453 A SE 8106453A SE 8106453 L SE8106453 L SE 8106453L
Authority
SE
Sweden
Prior art keywords
photodiod
spectral sensitivity
tailored spectral
absorbing region
diffusion
Prior art date
Application number
SE8106453A
Other languages
Swedish (sv)
Inventor
T Brogardh
C Ovren
Original Assignee
Asea Ab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asea Ab filed Critical Asea Ab
Priority to SE8106453A priority Critical patent/SE8106453L/en
Priority to FR8217885A priority patent/FR2515877A1/en
Priority to DE19823239657 priority patent/DE3239657A1/en
Priority to JP57190665A priority patent/JPS5884473A/en
Priority to GB08231208A priority patent/GB2108760A/en
Publication of SE8106453L publication Critical patent/SE8106453L/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes

Landscapes

  • Light Receiving Elements (AREA)

Abstract

In a semiconductor photodetector formed as a monolithic structure comprising regions (30, 31, 32) having mutually differing light absorption properties, an absorbing region (30) and a photoresponsive portion (31, 32) are separated by a diffusion barrier (30.5) in the form of a zone, layer or boundary surface constituting a bar to diffusion of minority charge carriers. The photoresponsive portion may comprise a P-N junction, Schottky diode or MOS structure, and the absorbing region (30) may be a filter region. <IMAGE>
SE8106453A 1981-11-02 1981-11-02 PHOTODIOD STRUCTURE WITH T tailored SPECTRAL SENSITIVITY SE8106453L (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
SE8106453A SE8106453L (en) 1981-11-02 1981-11-02 PHOTODIOD STRUCTURE WITH T tailored SPECTRAL SENSITIVITY
FR8217885A FR2515877A1 (en) 1981-11-02 1982-10-26 PHOTODETECTOR WITH SELECTED SPECTRAL SENSITIVITY
DE19823239657 DE3239657A1 (en) 1981-11-02 1982-10-27 PHOTODETECTOR MADE OF SEMICONDUCTOR MATERIAL
JP57190665A JPS5884473A (en) 1981-11-02 1982-10-29 Photodiode
GB08231208A GB2108760A (en) 1981-11-02 1982-11-01 Semiconductor photodetector having tailored spectral sensitivity

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE8106453A SE8106453L (en) 1981-11-02 1981-11-02 PHOTODIOD STRUCTURE WITH T tailored SPECTRAL SENSITIVITY

Publications (1)

Publication Number Publication Date
SE8106453L true SE8106453L (en) 1983-05-03

Family

ID=20344933

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8106453A SE8106453L (en) 1981-11-02 1981-11-02 PHOTODIOD STRUCTURE WITH T tailored SPECTRAL SENSITIVITY

Country Status (5)

Country Link
JP (1) JPS5884473A (en)
DE (1) DE3239657A1 (en)
FR (1) FR2515877A1 (en)
GB (1) GB2108760A (en)
SE (1) SE8106453L (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3743131A1 (en) * 1987-10-26 1989-05-03 Siemens Ag ARRANGEMENT FOR HIGH-RESOLUTION SPECTROSCOPY
DE10019089C1 (en) * 2000-04-12 2001-11-22 Epigap Optoelektronik Gmbh Wavelength selective pn junction photodiode

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5516479A (en) * 1978-07-21 1980-02-05 Sumitomo Electric Ind Ltd Heterojunction light receiving diode
US4213138A (en) * 1978-12-14 1980-07-15 Bell Telephone Laboratories, Incorporated Demultiplexing photodetector
GB2095496B (en) * 1981-03-18 1984-08-01 Emi Ltd Doppler radar velocimeter

Also Published As

Publication number Publication date
JPS5884473A (en) 1983-05-20
DE3239657A1 (en) 1983-05-19
FR2515877A1 (en) 1983-05-06
GB2108760A (en) 1983-05-18

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