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SE8101994L - Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd - Google Patents

Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd

Info

Publication number
SE8101994L
SE8101994L SE8101994A SE8101994A SE8101994L SE 8101994 L SE8101994 L SE 8101994L SE 8101994 A SE8101994 A SE 8101994A SE 8101994 A SE8101994 A SE 8101994A SE 8101994 L SE8101994 L SE 8101994L
Authority
SE
Sweden
Prior art keywords
schottky
electronic circuit
contact element
different
pct
Prior art date
Application number
SE8101994A
Other languages
Unknown language ( )
English (en)
Inventor
Per-Arne Tove
Original Assignee
Tove Per Arne
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tove Per Arne filed Critical Tove Per Arne
Priority to SE8101994A priority Critical patent/SE8101994L/sv
Priority to DE8282901043T priority patent/DE3267101D1/de
Priority to AU82790/82A priority patent/AU8279082A/en
Priority to JP57501153A priority patent/JPS58500464A/ja
Priority to US06/441,530 priority patent/US4554569A/en
Priority to PCT/SE1982/000093 priority patent/WO1982003498A1/en
Priority to AT82901043T priority patent/ATE16328T1/de
Priority to EP82901043A priority patent/EP0075575B1/en
Publication of SE8101994L publication Critical patent/SE8101994L/sv

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/647—Schottky drain or source electrodes for IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/64—Electrodes comprising a Schottky barrier to a semiconductor
    • H10D64/649—Schottky drain or source electrodes for FETs having rectifying junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Transistors (AREA)
SE8101994A 1981-03-27 1981-03-27 Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd SE8101994L (sv)

Priority Applications (8)

Application Number Priority Date Filing Date Title
SE8101994A SE8101994L (sv) 1981-03-27 1981-03-27 Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd
DE8282901043T DE3267101D1 (en) 1981-03-27 1982-03-29 Electronic circuit
AU82790/82A AU8279082A (en) 1981-03-27 1982-03-29 Electronic circuit
JP57501153A JPS58500464A (ja) 1981-03-27 1982-03-29 電子回路
US06/441,530 US4554569A (en) 1981-03-27 1982-03-29 Integrated electron circuits having Schottky field effect transistors of P- and N-type
PCT/SE1982/000093 WO1982003498A1 (en) 1981-03-27 1982-03-29 Electronic circuit
AT82901043T ATE16328T1 (de) 1981-03-27 1982-03-29 Elektronische schaltung.
EP82901043A EP0075575B1 (en) 1981-03-27 1982-03-29 Electronic circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE8101994A SE8101994L (sv) 1981-03-27 1981-03-27 Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd

Publications (1)

Publication Number Publication Date
SE8101994L true SE8101994L (sv) 1982-09-28

Family

ID=20343460

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8101994A SE8101994L (sv) 1981-03-27 1981-03-27 Elektronisk krets med schottky-felttransistor med kontaktelement med olika schottky-barrierhojd

Country Status (6)

Country Link
US (1) US4554569A (sv)
EP (1) EP0075575B1 (sv)
JP (1) JPS58500464A (sv)
DE (1) DE3267101D1 (sv)
SE (1) SE8101994L (sv)
WO (1) WO1982003498A1 (sv)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5286985A (en) * 1988-11-04 1994-02-15 Texas Instruments Incorporated Interface circuit operable to perform level shifting between a first type of device and a second type of device
RU2130668C1 (ru) * 1994-09-30 1999-05-20 Акционерное общество закрытого типа "VL" Полевой транзистор типа металл - диэлектрик-полупроводник
US20030235936A1 (en) * 1999-12-16 2003-12-25 Snyder John P. Schottky barrier CMOS device and method
US6303479B1 (en) * 1999-12-16 2001-10-16 Spinnaker Semiconductor, Inc. Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts
US6784035B2 (en) * 2002-01-23 2004-08-31 Spinnaker Semiconductor, Inc. Field effect transistor having source and/or drain forming Schottky or Schottky-like contact with strained semiconductor substrate
CN100359701C (zh) * 2001-08-10 2008-01-02 斯平内克半导体股份有限公司 具有改进的驱动电流特性的晶体管及其制作方法
US20060079059A1 (en) * 2001-08-10 2006-04-13 Snyder John P Transistor having high dielectric constant gate insulating layer and source and drain forming schottky contact with substrate
US6974737B2 (en) * 2002-05-16 2005-12-13 Spinnaker Semiconductor, Inc. Schottky barrier CMOS fabrication method
EP1506579A2 (en) * 2002-05-16 2005-02-16 Spinnaker Semiconductor, Inc. Schottky barrier cmos device and method
RU2304825C1 (ru) * 2006-04-10 2007-08-20 Государственное образовательное учреждение высшего профессионального образования "Таганрогский государственный радиотехнический университет" (ТРТУ) Интегральный двунаправленный четырехконтактный коммутатор на основе комплементарных квантовых областей
US9685509B2 (en) 2013-07-30 2017-06-20 Samsung Electronics Co., Ltd. Finfet devices including high mobility channel materials with materials of graded composition in recessed source/drain regions
US9917158B2 (en) 2013-07-30 2018-03-13 Samsung Electronics Co., Ltd. Device contact structures including heterojunctions for low contact resistance
EP3971973A1 (en) * 2020-09-18 2022-03-23 III-V Technologies GmbH Inverters, amplifiers and universal gates based on stacked gate mesfet and hemt

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3767984A (en) * 1969-09-03 1973-10-23 Nippon Electric Co Schottky barrier type field effect transistor
GB1507091A (en) * 1974-03-29 1978-04-12 Siemens Ag Schottky-gate field-effect transistors
US4048646A (en) * 1975-02-26 1977-09-13 Nippon Electric Company, Limited Dual-gate schottky barrier gate fet having an intermediate electrode and a method of making same
US4075651A (en) * 1976-03-29 1978-02-21 Varian Associates, Inc. High speed fet employing ternary and quarternary iii-v active layers
US4141020A (en) * 1976-12-29 1979-02-20 International Business Machines Corporation Intermetallic aluminum-transition metal compound Schottky contact
FR2386903A1 (fr) * 1977-04-08 1978-11-03 Thomson Csf Transistor a effet de champ sur support a grande bande interdite
US4160984A (en) * 1977-11-14 1979-07-10 Hughes Aircraft Company Schottky-gate field-effect transistor and fabrication process therefor
US4183033A (en) * 1978-03-13 1980-01-08 National Research Development Corporation Field effect transistors
US4233337A (en) * 1978-05-01 1980-11-11 International Business Machines Corporation Method for forming semiconductor contacts
JPS55132068A (en) * 1979-03-30 1980-10-14 Ibm Pnp bipolar transistor
DE2917407C2 (de) * 1979-04-28 1982-10-07 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Hochfrequenz-Sperrschicht-Feldeffekttransistor
US4236166A (en) * 1979-07-05 1980-11-25 Bell Telephone Laboratories, Incorporated Vertical field effect transistor
FR2465318A1 (fr) * 1979-09-10 1981-03-20 Thomson Csf Transistor a effet de champ a frequence de coupure elevee
US4300152A (en) * 1980-04-07 1981-11-10 Bell Telephone Laboratories, Incorporated Complementary field-effect transistor integrated circuit device
US4394673A (en) * 1980-09-29 1983-07-19 International Business Machines Corporation Rare earth silicide Schottky barriers
US4325181A (en) * 1980-12-17 1982-04-20 The United States Of America As Represented By The Secretary Of The Navy Simplified fabrication method for high-performance FET

Also Published As

Publication number Publication date
US4554569A (en) 1985-11-19
DE3267101D1 (en) 1985-12-05
EP0075575A1 (en) 1983-04-06
JPS58500464A (ja) 1983-03-24
WO1982003498A1 (en) 1982-10-14
EP0075575B1 (en) 1985-10-30

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