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SE7712889L - Halvledaranordning - Google Patents

Halvledaranordning

Info

Publication number
SE7712889L
SE7712889L SE7712889A SE7712889A SE7712889L SE 7712889 L SE7712889 L SE 7712889L SE 7712889 A SE7712889 A SE 7712889A SE 7712889 A SE7712889 A SE 7712889A SE 7712889 L SE7712889 L SE 7712889L
Authority
SE
Sweden
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
SE7712889A
Other languages
English (en)
Inventor
S Hokuyo
T Fujii
K Mihara
Y Ishibashi
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP13821376A external-priority patent/JPS5362464A/ja
Priority claimed from JP13821276A external-priority patent/JPS5362463A/ja
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of SE7712889L publication Critical patent/SE7712889L/sv

Links

Classifications

    • H10P52/00
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/01Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/104Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117Shapes of semiconductor bodies
    • H10P54/00
    • H10W70/20
    • H10W74/01
    • H10W74/137
    • H10W90/736
SE7712889A 1976-11-16 1977-11-15 Halvledaranordning SE7712889L (sv)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP13821376A JPS5362464A (en) 1976-11-16 1976-11-16 Semiconductor divice
JP13821276A JPS5362463A (en) 1976-11-16 1976-11-16 Semiconductor divice

Publications (1)

Publication Number Publication Date
SE7712889L true SE7712889L (sv) 1978-05-17

Family

ID=26471325

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7712889A SE7712889L (sv) 1976-11-16 1977-11-15 Halvledaranordning

Country Status (2)

Country Link
DE (1) DE2751272A1 (sv)
SE (1) SE7712889L (sv)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0405757A3 (en) * 1989-06-27 1991-01-30 Hewlett-Packard Company High efficiency light-emitting diode
EP1041649A1 (de) 1999-03-29 2000-10-04 ANTEC Solar GmbH Verfahren zur Herstellung eines Dünnschichtsolarmoduls und eine Durchtrennungsvorrichtung
EP1041648B1 (de) * 1999-03-29 2005-12-07 ANTEC Solar Energy AG Verfahren und Verwendung einer Durchtrennungsvorrichtung zur Herstellung eines CdS/CdTe Dünnschichtsolarmoduls

Also Published As

Publication number Publication date
DE2751272A1 (de) 1978-05-18

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