SE7712889L - Halvledaranordning - Google Patents
HalvledaranordningInfo
- Publication number
- SE7712889L SE7712889L SE7712889A SE7712889A SE7712889L SE 7712889 L SE7712889 L SE 7712889L SE 7712889 A SE7712889 A SE 7712889A SE 7712889 A SE7712889 A SE 7712889A SE 7712889 L SE7712889 L SE 7712889L
- Authority
- SE
- Sweden
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
Classifications
-
- H10P52/00—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
- H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
- H10D62/104—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
-
- H10P54/00—
-
- H10W70/20—
-
- H10W74/01—
-
- H10W74/137—
-
- H10W90/736—
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13821376A JPS5362464A (en) | 1976-11-16 | 1976-11-16 | Semiconductor divice |
| JP13821276A JPS5362463A (en) | 1976-11-16 | 1976-11-16 | Semiconductor divice |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE7712889L true SE7712889L (sv) | 1978-05-17 |
Family
ID=26471325
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE7712889A SE7712889L (sv) | 1976-11-16 | 1977-11-15 | Halvledaranordning |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE2751272A1 (sv) |
| SE (1) | SE7712889L (sv) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0405757A3 (en) * | 1989-06-27 | 1991-01-30 | Hewlett-Packard Company | High efficiency light-emitting diode |
| EP1041649A1 (de) | 1999-03-29 | 2000-10-04 | ANTEC Solar GmbH | Verfahren zur Herstellung eines Dünnschichtsolarmoduls und eine Durchtrennungsvorrichtung |
| EP1041648B1 (de) * | 1999-03-29 | 2005-12-07 | ANTEC Solar Energy AG | Verfahren und Verwendung einer Durchtrennungsvorrichtung zur Herstellung eines CdS/CdTe Dünnschichtsolarmoduls |
-
1977
- 1977-11-15 SE SE7712889A patent/SE7712889L/sv not_active Application Discontinuation
- 1977-11-16 DE DE19772751272 patent/DE2751272A1/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| DE2751272A1 (de) | 1978-05-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NAV | Patent application has lapsed |
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