SE516338C2 - RF-effekttransistor med kollektor upp - Google Patents
RF-effekttransistor med kollektor uppInfo
- Publication number
- SE516338C2 SE516338C2 SE9902005A SE9902005A SE516338C2 SE 516338 C2 SE516338 C2 SE 516338C2 SE 9902005 A SE9902005 A SE 9902005A SE 9902005 A SE9902005 A SE 9902005A SE 516338 C2 SE516338 C2 SE 516338C2
- Authority
- SE
- Sweden
- Prior art keywords
- collector
- base
- silicon
- emitter
- further step
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 37
- 239000010703 silicon Substances 0.000 claims abstract description 37
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 238000005516 engineering process Methods 0.000 claims abstract description 9
- 230000003071 parasitic effect Effects 0.000 claims abstract description 5
- 238000000151 deposition Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 14
- 238000001465 metallisation Methods 0.000 claims description 14
- 238000001312 dry etching Methods 0.000 claims description 11
- 238000002513 implantation Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 125000006850 spacer group Chemical group 0.000 claims description 6
- 229910021332 silicide Inorganic materials 0.000 claims description 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 4
- 238000013461 design Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 230000003213 activating effect Effects 0.000 claims 1
- 238000009713 electroplating Methods 0.000 claims 1
- 230000008020 evaporation Effects 0.000 claims 1
- 238000001704 evaporation Methods 0.000 claims 1
- 238000007493 shaping process Methods 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052796 boron Inorganic materials 0.000 description 6
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 5
- 150000004767 nitrides Chemical class 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 239000002775 capsule Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910021340 platinum monosilicide Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000001029 thermal curing Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/01—Manufacture or treatment
- H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
- H10D10/80—Heterojunction BJTs
- H10D10/821—Vertical heterojunction BJTs
- H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
Landscapes
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9902005A SE516338C2 (sv) | 1999-05-31 | 1999-05-31 | RF-effekttransistor med kollektor upp |
| TW088109812A TW448580B (en) | 1999-05-31 | 1999-06-11 | Collector-up RF power transistor |
| KR10-2001-7014855A KR100434659B1 (ko) | 1999-05-31 | 2000-05-19 | 콜렉터-업 ｒｆ 전력 트랜지스터 |
| AU52604/00A AU5260400A (en) | 1999-05-31 | 2000-05-19 | Collector-up rf power transistor |
| EP00937430A EP1192651A1 (fr) | 1999-05-31 | 2000-05-19 | Transistor de puissance rf a collecteur mesa tourne vers le haut |
| CA002373580A CA2373580A1 (fr) | 1999-05-31 | 2000-05-19 | Transistor de puissance rf a collecteur mesa tourne vers le haut |
| PCT/SE2000/001002 WO2000074129A1 (fr) | 1999-05-31 | 2000-05-19 | Transistor de puissance rf a collecteur mesa tourne vers le haut |
| CNB008082537A CN1149648C (zh) | 1999-05-31 | 2000-05-19 | 集电极朝上的射频功率晶体管及其制造方法 |
| HK02107412.3A HK1045910A1 (zh) | 1999-05-31 | 2000-05-19 | 集電極朝上的射頻功率晶體管 |
| JP2001500329A JP2003501802A (ja) | 1999-05-31 | 2000-05-19 | コレクタ高位ｒｆパワートランジスタ |
| US09/583,648 US6329259B1 (en) | 1999-05-31 | 2000-05-30 | Collector-up RF power transistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE9902005A SE516338C2 (sv) | 1999-05-31 | 1999-05-31 | RF-effekttransistor med kollektor upp |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE9902005D0 SE9902005D0 (sv) | 1999-05-31 |
| SE9902005L SE9902005L (sv) | 2000-12-01 |
| SE516338C2 true SE516338C2 (sv) | 2001-12-17 |
Family
ID=20415834
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE9902005A SE516338C2 (sv) | 1999-05-31 | 1999-05-31 | RF-effekttransistor med kollektor upp |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US6329259B1 (fr) |
| EP (1) | EP1192651A1 (fr) |
| JP (1) | JP2003501802A (fr) |
| KR (1) | KR100434659B1 (fr) |
| CN (1) | CN1149648C (fr) |
| AU (1) | AU5260400A (fr) |
| CA (1) | CA2373580A1 (fr) |
| HK (1) | HK1045910A1 (fr) |
| SE (1) | SE516338C2 (fr) |
| TW (1) | TW448580B (fr) |
| WO (1) | WO2000074129A1 (fr) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6329675B2 (en) * | 1999-08-06 | 2001-12-11 | Cree, Inc. | Self-aligned bipolar junction silicon carbide transistors |
| AU2001224295A1 (en) * | 2000-12-11 | 2002-06-24 | Cree, Inc. | Method of fabricating a self-aligned bipolar junction transistor in silicon carbide and resulting devices |
| US6699765B1 (en) | 2002-08-29 | 2004-03-02 | Micrel, Inc. | Method of fabricating a bipolar transistor using selective epitaxially grown SiGe base layer |
| JP4258205B2 (ja) * | 2002-11-11 | 2009-04-30 | パナソニック株式会社 | 半導体装置 |
| JP4949650B2 (ja) * | 2005-07-13 | 2012-06-13 | ルネサスエレクトロニクス株式会社 | 半導体装置及び半導体装置の製造方法 |
| CN101162730B (zh) * | 2007-11-13 | 2010-04-07 | 清华大学 | 多晶收集区倒置结构SiGe异质结晶体管 |
| US7932541B2 (en) * | 2008-01-14 | 2011-04-26 | International Business Machines Corporation | High performance collector-up bipolar transistor |
| JP2019075424A (ja) * | 2017-10-13 | 2019-05-16 | 株式会社村田製作所 | ヘテロ接合バイポーラトランジスタ |
| US12218018B2 (en) | 2022-04-21 | 2025-02-04 | Infineon Technologies Ag | Semiconductor encapsulant strength enhancer |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB8708926D0 (en) * | 1987-04-14 | 1987-05-20 | British Telecomm | Bipolar transistor |
| US5198689A (en) * | 1988-11-30 | 1993-03-30 | Fujitsu Limited | Heterojunction bipolar transistor |
| JP3011729B2 (ja) * | 1990-01-16 | 2000-02-21 | 沖電気工業株式会社 | バイポーラ型半導体集積回路装置の製造方法 |
| JPH0785476B2 (ja) * | 1991-06-14 | 1995-09-13 | インターナショナル・ビジネス・マシーンズ・コーポレイション | エミッタ埋め込み型バイポーラ・トランジスタ構造 |
| EP0550962A3 (en) * | 1992-01-08 | 1993-09-29 | American Telephone And Telegraph Company | Heterojunction bipolar transistor |
| JP3084541B2 (ja) * | 1992-09-18 | 2000-09-04 | シャープ株式会社 | 縦型構造トランジスタ |
| US5700701A (en) * | 1992-10-30 | 1997-12-23 | Texas Instruments Incorporated | Method for reducing junction capacitance and increasing current gain in collector-up bipolar transistors |
| US5798539A (en) * | 1992-12-10 | 1998-08-25 | Daimler Benz Ag | Bipolar transistor for very high frequencies |
| MY115336A (en) | 1994-02-18 | 2003-05-31 | Ericsson Telefon Ab L M | Electromigration resistant metallization structures and process for microcircuit interconnections with rf-reactively sputtered titanium tungsten and gold |
| US5485025A (en) * | 1994-12-02 | 1996-01-16 | Texas Instruments Incorporated | Depleted extrinsic emitter of collector-up heterojunction bipolar transistor |
-
1999
- 1999-05-31 SE SE9902005A patent/SE516338C2/sv not_active IP Right Cessation
- 1999-06-11 TW TW088109812A patent/TW448580B/zh active
-
2000
- 2000-05-19 HK HK02107412.3A patent/HK1045910A1/zh unknown
- 2000-05-19 AU AU52604/00A patent/AU5260400A/en not_active Abandoned
- 2000-05-19 WO PCT/SE2000/001002 patent/WO2000074129A1/fr not_active Ceased
- 2000-05-19 KR KR10-2001-7014855A patent/KR100434659B1/ko not_active Expired - Fee Related
- 2000-05-19 JP JP2001500329A patent/JP2003501802A/ja not_active Withdrawn
- 2000-05-19 EP EP00937430A patent/EP1192651A1/fr not_active Withdrawn
- 2000-05-19 CA CA002373580A patent/CA2373580A1/fr not_active Abandoned
- 2000-05-19 CN CNB008082537A patent/CN1149648C/zh not_active Expired - Fee Related
- 2000-05-30 US US09/583,648 patent/US6329259B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| HK1045910A1 (zh) | 2002-12-13 |
| US6329259B1 (en) | 2001-12-11 |
| SE9902005D0 (sv) | 1999-05-31 |
| TW448580B (en) | 2001-08-01 |
| CN1149648C (zh) | 2004-05-12 |
| JP2003501802A (ja) | 2003-01-14 |
| EP1192651A1 (fr) | 2002-04-03 |
| KR20020032425A (ko) | 2002-05-03 |
| KR100434659B1 (ko) | 2004-06-07 |
| CA2373580A1 (fr) | 2000-12-07 |
| SE9902005L (sv) | 2000-12-01 |
| AU5260400A (en) | 2000-12-18 |
| CN1353862A (zh) | 2002-06-12 |
| WO2000074129A1 (fr) | 2000-12-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed | ||
| NUG | Patent has lapsed |