SE303808B - - Google Patents

Info

Publication number: SE303808B
Authority: SE; Sweden

Application number

SE14303/64A

Inventor

R Minton

R Glicksman

Original Assignee

Rca Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1963-11-26

Filing date

1964-11-26

Publication date

1968-09-09

1964-11-26 Application filed by Rca Corp filed Critical Rca Corp

1968-09-09 Publication of SE303808B publication Critical patent/SE303808B/xx

Classifications

- H10W74/40—
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/043—Manufacture or treatment of planar diodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/053—Manufacture or treatment of heterojunction diodes or of tunnel diodes
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/70—Tunnel-effect diodes
- H10P95/00—
- H10W20/40—
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/82—Heterojunctions
- H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
- H10W72/07554—
- H10W72/5363—
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/026—Deposition thru hole in mask
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/051—Etching
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/072—Heterojunctions
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/979—Tunnel diodes

SE14303/64A 1963-11-26 1964-11-26 SE303808B (xx)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US326098A US3287186A (en)	1963-11-26	1963-11-26	Semiconductor devices and method of manufacture thereof

Publications (1)

Publication Number	Publication Date
SE303808B true SE303808B (xx)	1968-09-09

Family

ID=23270809

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
SE14303/64A SE303808B (xx)	1963-11-26	1964-11-26

Country Status (6)

Country	Link
US (1)	US3287186A (xx)
BE (1)	BE656140A (xx)
DE (1)	DE1276825B (xx)
GB (1)	GB1058036A (xx)
NL (1)	NL6413677A (xx)
SE (1)	SE303808B (xx)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE1289188B (de) *	1964-12-15	1969-02-13	Telefunken Patent	Metallbasistransistor
US3402081A (en) *	1965-06-30	1968-09-17	Ibm	Method for controlling the electrical characteristics of a semiconductor surface and product produced thereby
US3522164A (en) *	1965-10-21	1970-07-28	Texas Instruments Inc	Semiconductor surface preparation and device fabrication
JPS51149784A (en) *	1975-06-17	1976-12-22	Matsushita Electric Ind Co Ltd	Solid state light emission device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
FR1191404A (fr) *	1958-02-10	1959-10-20	Ct D Etudes Et De Dev De L Ele	Procédé de réalisation de diodes et produits industriels en résultant
US2981877A (en) *	1959-07-30	1961-04-25	Fairchild Semiconductor	Semiconductor device-and-lead structure
US3025438A (en) *	1959-09-18	1962-03-13	Tungsol Electric Inc	Field effect transistor
US3133336A (en) *	1959-12-30	1964-05-19	Ibm	Semiconductor device fabrication
DE1141386B (de) *	1961-04-26	1962-12-20	Siemens Ag	Verfahren zur Herstellung einer Halbleiteranordnung
FR1320577A (fr) *	1961-04-28	1963-03-08	Ibm	Dispositif et procédé de fabrication de semiconducteurs
US3121828A (en) *	1961-09-18	1964-02-18	Ibm	Tunnel diode devices and the method of fabrication thereof
NL286507A (xx) *	1961-12-11
US3184350A (en) *	1962-04-02	1965-05-18	Ibm	Fluorocarbon compound used in masking of epitaxial growth of semiconductors by vapordeposition

1963
- 1963-11-26 US US326098A patent/US3287186A/en not_active Expired - Lifetime
1964
- 1964-10-29 GB GB44247/64A patent/GB1058036A/en not_active Expired
- 1964-11-23 BE BE656140A patent/BE656140A/xx unknown
- 1964-11-25 DE DER39324A patent/DE1276825B/de active Pending
- 1964-11-25 NL NL6413677A patent/NL6413677A/xx unknown
- 1964-11-26 SE SE14303/64A patent/SE303808B/xx unknown

Also Published As

Publication number	Publication date
BE656140A (xx)	1965-03-16
NL6413677A (xx)	1965-05-27
US3287186A (en)	1966-11-22
GB1058036A (en)	1967-02-08
DE1276825B (de)	1968-09-05

Publication	Publication Date	Title
AR142945A1 (xx)	1965-02-11
AT260747B (xx)	1968-03-25
BE627012A (xx)
BE627172A (xx)
BE629458A (xx)
BE645484A (xx)	1964-09-21
NL6413677A (xx)	1965-05-27
BE645417A (xx)	1964-07-16
BE644037A (xx)	1964-06-15
BE643282A (xx)	1964-08-03
BE643053A (xx)	1964-07-28
BE642268A (xx)	1964-05-04
BE642066A (xx)	1964-05-04
BE641265A (xx)
BE635128A (xx)
BE633398A (xx)
BE621232A (xx)
BE627151A (xx)
BE627145A (xx)
BE627141A (xx)
BE627083A (xx)
BE627025A (xx)
BE627023A (xx)
BE626986A (xx)
BE626938A (xx)