SE0500647L - Production of polycrystalline films for shear mode piezoelectric thin film resonators - Google Patents
Production of polycrystalline films for shear mode piezoelectric thin film resonatorsInfo
- Publication number
- SE0500647L SE0500647L SE0500647A SE0500647A SE0500647L SE 0500647 L SE0500647 L SE 0500647L SE 0500647 A SE0500647 A SE 0500647A SE 0500647 A SE0500647 A SE 0500647A SE 0500647 L SE0500647 L SE 0500647L
- Authority
- SE
- Sweden
- Prior art keywords
- substrate
- surface normal
- production
- thin film
- target
- Prior art date
Links
- 239000010408 film Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 5
- 238000000151 deposition Methods 0.000 abstract 4
- 230000008021 deposition Effects 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract 1
- 238000009530 blood pressure measurement Methods 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000004907 flux Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 abstract 1
- 239000011261 inert gas Substances 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000005259 measurement Methods 0.000 abstract 1
- 150000002736 metal compounds Chemical class 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000001301 oxygen Substances 0.000 abstract 1
- 229910052760 oxygen Inorganic materials 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0617—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/225—Oblique incidence of vaporised material on substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/076—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by vapour phase deposition
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Physical Vapour Deposition (AREA)
- Measuring Fluid Pressure (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE0500647A SE0500647L (sv) | 2005-03-23 | 2005-03-23 | Production of polycrystalline films for shear mode piezoelectric thin film resonators |
| DE602006018880T DE602006018880D1 (de) | 2005-03-23 | 2006-03-23 | Piezoelektrischer dünnfilmresonator und verfahren zu seiner herstellung |
| EP06717125A EP1861924B8 (en) | 2005-03-23 | 2006-03-23 | Piezoelectric thin film resonator and method for making same |
| US11/886,964 US20080197750A1 (en) | 2005-03-23 | 2006-03-23 | Piezoelectric Thin Film Resonator |
| ES06717125T ES2357779T3 (es) | 2005-03-23 | 2006-03-23 | Resonador piezoeléctrico de película delgada y método para fabricarlo. |
| AT06717125T ATE492070T1 (de) | 2005-03-23 | 2006-03-23 | Piezoelektrischer dünnfilmresonator und verfahren zu seiner herstellung |
| PCT/SE2006/050041 WO2006101450A1 (en) | 2005-03-23 | 2006-03-23 | Piezoelectric thin film resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE0500647A SE0500647L (sv) | 2005-03-23 | 2005-03-23 | Production of polycrystalline films for shear mode piezoelectric thin film resonators |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SE0500647L true SE0500647L (sv) | 2006-09-24 |
Family
ID=37024049
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE0500647A SE0500647L (sv) | 2005-03-23 | 2005-03-23 | Production of polycrystalline films for shear mode piezoelectric thin film resonators |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20080197750A1 (sv) |
| EP (1) | EP1861924B8 (sv) |
| AT (1) | ATE492070T1 (sv) |
| DE (1) | DE602006018880D1 (sv) |
| ES (1) | ES2357779T3 (sv) |
| SE (1) | SE0500647L (sv) |
| WO (1) | WO2006101450A1 (sv) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008068011A1 (de) * | 2006-12-07 | 2008-06-12 | Albert-Ludwigs-Universität Freiburg | Piezoelektrische sensoranordnung mit dünnschichtscherwellenresonator basierend auf epitaktisch gewachsenen piezoelektrischen schichten |
| US20090053401A1 (en) * | 2007-08-24 | 2009-02-26 | Maxim Integrated Products, Inc. | Piezoelectric deposition for BAW resonators |
| US8512800B2 (en) | 2007-12-04 | 2013-08-20 | Triquint Semiconductor, Inc. | Optimal acoustic impedance materials for polished substrate coating to suppress passband ripple in BAW resonators and filters |
| US7768364B2 (en) | 2008-06-09 | 2010-08-03 | Maxim Integrated Products, Inc. | Bulk acoustic resonators with multi-layer electrodes |
| US8478384B2 (en) | 2010-01-19 | 2013-07-02 | Lightlab Imaging, Inc. | Intravascular optical coherence tomography system with pressure monitoring interface and accessories |
| US9610064B2 (en) | 2011-05-31 | 2017-04-04 | Desmond Adler | Multimodal imaging system, apparatus, and methods |
| KR102124557B1 (ko) | 2011-06-08 | 2020-06-18 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 스퍼터링 타겟, 스퍼터링 타겟의 제조 방법 및 박막의 형성 방법 |
| WO2013019840A1 (en) | 2011-08-03 | 2013-02-07 | Lightlab Imaging, Inc. | Systems, methods and apparatus for determining a fractional flow reserve |
| DE102012211314A1 (de) * | 2012-06-29 | 2014-02-20 | Siemens Aktiengesellschaft | Verfahren zum Herstellen eines polykristallinen Keramikfilms |
| US9885108B2 (en) | 2012-08-07 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming sputtering target |
| JP5991529B2 (ja) * | 2012-10-29 | 2016-09-14 | 三菱マテリアル株式会社 | 耐欠損性と耐摩耗性にすぐれた表面被覆切削工具 |
| WO2014087799A1 (ja) * | 2012-12-05 | 2014-06-12 | 株式会社村田製作所 | 圧電部材、弾性波装置及び圧電部材の製造方法 |
| US9088265B2 (en) * | 2013-05-17 | 2015-07-21 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator comprising a boron nitride piezoelectric layer |
| ES2883138T3 (es) | 2014-04-04 | 2021-12-07 | St Jude Medical Systems Ab | Sistema de diagnóstico de datos de flujo y presión intravascular |
| KR101573652B1 (ko) * | 2014-10-23 | 2015-12-01 | 성균관대학교산학협력단 | 산화아연 나노시트 구조물 제조방법 및 이에 의해 제조된 산화아연 나노시트 구조물을 포함하는 전자장치와 터치센서장치 |
| US10656123B2 (en) | 2014-12-01 | 2020-05-19 | Modoc Technologies, Llc | Sensors, systems and methods for detecting analytes using same |
| WO2017066448A1 (en) * | 2015-10-14 | 2017-04-20 | Qorvo Us, Inc. | Deposition system for growth of inclined c-axis piezoelectric material structures |
| WO2017106489A2 (en) | 2015-12-15 | 2017-06-22 | Qorvo Us, Inc. | Temperature compensation and operational configuration for bulk acoustic wave resonator devices |
| US11824511B2 (en) | 2018-03-21 | 2023-11-21 | Qorvo Us, Inc. | Method for manufacturing piezoelectric bulk layers with tilted c-axis orientation |
| US11381212B2 (en) * | 2018-03-21 | 2022-07-05 | Qorvo Us, Inc. | Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same |
| KR102787812B1 (ko) * | 2018-10-26 | 2025-03-27 | 에바텍 아크티엔게젤샤프트 | 압전 코팅을 위한 증착 공정 |
| CN112216646B (zh) | 2019-07-10 | 2026-02-10 | Asmip私人控股有限公司 | 基板支撑组件及包括其的基板处理装置 |
| US11401601B2 (en) | 2019-09-13 | 2022-08-02 | Qorvo Us, Inc. | Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same |
| WO2022034852A1 (ja) * | 2020-08-13 | 2022-02-17 | 株式会社村田製作所 | 膜の製造方法および導電性膜 |
| EP4228900A4 (en) * | 2020-10-16 | 2024-12-04 | Qorvo Us, Inc. | METHODS FOR DEPOSITING PIEZOELECTRIC MATERIALS AND MATERIALS DEPOSITED USING THEM |
| KR102644504B1 (ko) * | 2022-03-28 | 2024-03-08 | 계명대학교 산학협력단 | 박막센서를 포함하는 산소원자 발생시스템 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3558351A (en) * | 1968-12-19 | 1971-01-26 | Bell Telephone Labor Inc | Thin semiconductor films |
| US4719383A (en) * | 1985-05-20 | 1988-01-12 | The United States Of America As Represented By The United States Department Of Energy | Piezoelectric shear wave resonator and method of making same |
-
2005
- 2005-03-23 SE SE0500647A patent/SE0500647L/sv not_active Application Discontinuation
-
2006
- 2006-03-23 US US11/886,964 patent/US20080197750A1/en not_active Abandoned
- 2006-03-23 DE DE602006018880T patent/DE602006018880D1/de active Active
- 2006-03-23 WO PCT/SE2006/050041 patent/WO2006101450A1/en not_active Ceased
- 2006-03-23 EP EP06717125A patent/EP1861924B8/en not_active Not-in-force
- 2006-03-23 ES ES06717125T patent/ES2357779T3/es active Active
- 2006-03-23 AT AT06717125T patent/ATE492070T1/de not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| EP1861924B1 (en) | 2010-12-15 |
| ATE492070T1 (de) | 2011-01-15 |
| EP1861924A1 (en) | 2007-12-05 |
| DE602006018880D1 (de) | 2011-01-27 |
| ES2357779T3 (es) | 2011-04-29 |
| US20080197750A1 (en) | 2008-08-21 |
| EP1861924B8 (en) | 2011-01-26 |
| WO2006101450A1 (en) | 2006-09-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NAV | Patent application has lapsed |