RU2507679C2 - Bulk microblock of vacuum integrated circuits of logic microwave return wave systems - Google Patents

Abstract

FIELD: radio engineering, communication.

SUBSTANCE: in the disclosed microwave adapters between layers of integrated circuits, a wedge-shaped vertical adapter in one case and terrace-shaped vertical adapter in another are placed symmetrically one below the other, each adapter including its own microcavities, and above said adapters there handing edges of film elements of working topologies with obtuse angles of a given value between them and walls of the microcavities.

EFFECT: miniaturisation of the complete system of logic elements with reduced loss of electromagnetic energy, distributing integrity on a third coordinate while arranging active topological microwave structures in layers.

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Description

The invention relates to electronic equipment and can be used in the production of electrovacuum microblocks of logical microwave systems of the backward wave of ultra-high-reliability computers that can be operated in extreme conditions.

Key words: microprofile, microcavity, microblock, microwave transition, logic element, miniaturization.

Known semiconductor integrated optical bulk structures with waveguide compounds presented in the book [G. Svechnikov Elements of integrated optics. M .: Radio and communications, 1987. - 104c.], Where Fig. 6d, p.23 shows volumetric silicon structures with planar (2D) compounds, where there are losses due to the retraction of electromagnetic fields into the structures.

The proposed connection options are unacceptable for the future task of designing vacuum microwave microblocks, when the interaction of electromagnetic fields and radiation should be lossless.

In the same book, on p. 60, Fig. 36/14 shows a semiconductor bulk multilevel microblock with a terrace-shaped transition of an injection semiconductor laser with a double heterostructure. However, volumetric multilevel structures based on semiconductor microelectronics technology using many ingredients are expensive, which excludes their use for producing vacuum devices based on volumetric ICs. In addition, the shortcomings mentioned in relation to the previous sentence also apply to the shortcomings of this example.

The closest in technical essence of the tasks to the claimed invention are volumetric microblock microcircuits in conjunction with their dielectric carrier: asymmetric strip line; the coaxial line and the T-transition between them described in the book [Gvozdev V.I., Nefedov E.I. Volumetric integrated circuits microwave - an elemental base of analog and digital radio electronics. M .: Science. Ch. ed. Phys.-Math. Lit., 1987. - 112 pp.], where there are many “multi-storey” (multi-layer - as is customary in microelectronics) microblocks with “floor” (interlayer) connections - transitions, see Fig. 2.1-2.10, p. .32, 34, 35, 37, 38, 40, 41, 44, 45. Topological structures are located on carrier substrates with thicknesses of 0.5-2.0 mm.

However, the proposed three-dimensional microblock circuits with connections and junctions are unsuitable for creating a logically complete system of elements for computers based on vacuum ICs, since there are various kinds of inhomogeneities in the transmission of microwave energy from one layer to another of a dielectric of large thickness and weight, and also dielectric carriers due to their absorption of microwave energy when it is heated, during the operation of the device they draw in the electromagnetic fields of self-oscillating devices with extended interaction of electron beams with in these fields, while hot electrons destroy the conductive topological structures, which makes miniaturization of vacuum devices impossible and leads to a fundamental scientific and technological [1] limit-limit in the development of miniaturization of electronic instrumentation due to an increase in the loss of electromagnetic energy in a dielectric carrier, resulting in topological conductive films are destroyed - this is due to structural difficulties and the need to ensure effective interactions effects of physical fields and radiation, depending on the solution of design issues and manufacturing technology [Fundamental limits in radio electronics and related fields // TIIER. - 1981. - T. 69. - No. 2. - C.3-7].

Thus, the existing transition schemes and designs for transferring, for example, microwave energy through strips through the material of the dielectric carrier are ineffective due to significant attenuation, when pulled into the carrier, on the one hand, on the other hand, conductive microstrips require an additional area for of its placement, which significantly reduces the level of both planar integrality and volumetric, at a time when aviation and rocket and space technology put forward stringent requirements for reliability and mass overall parameters of CEA, on the timeliness of obtaining information, its reliability and high quality.

The objective of the invention is the creation of microblock volumetric designs of integrated circuits for logical microwave systems of the backward wave, vacuum microcircuits of the microwave by using basic smooth transitions of transmission of electromagnetic energy between the layers of self-oscillating ICs with extended interaction of electron beams with electromagnetic fields with their minimum losses in order to reduce the volume of promising electrovacuum systems.

To obtain such a technical result, a microprofile of the structure of the vacuum integrated microwave circuit and a method for its manufacture were developed [2]. The proposed invention has solved the problem of creating a typical layout construct of a microprofile structure of a vacuum integrated microwave circuit with an increased level of integration and a decrease in the loss of microwave energy in a dielectric carrier (Fig. 1).

The microprofile of the structure of the vacuum integrated microwave circuit contains film elements of the working topology located at a distance (with a gap) from each other, coupled to the surface of the dielectric carrier of topological structures, in the body of which a microcavity is symmetrically combined with the working topology with the formation of overhanging edges of the film elements of the working topology and the angle between them and the walls of the microcavity of a given size, the microcavity in the dielectric carrier is made through and with an angle β between at its wall - forming - and the overhanging edge of the film element of the working topology, selected from the range of 90 ° <β≤135 °.

The disadvantage of this technical solution is the impossibility of transferring microwave energy without loss from one layer of a vacuum IC to another when the layers are conjugated from the sides opposite to the topological conductive structures.

For the construction of microblock volumetric structures from planar ZS, the author has developed another microprofile (figure 2) [3]. Such a microprofile is fundamentally different from the previous one by a twisted face, in which the generatrix changes the initial angle β between the conductive microstrip and the face by an angle β ′ at the bend to the tip. Such a microprofile construct allows, together with a microprofile construct, where the angle β is constant, to develop interlayer vertically through hollow transitions (Figs. 3 and 4), which are extremely necessary for the construction of microblock bulk structures, designs of backward wave systems [4-6] and [others. ] for highly reliable computers, which require control systems of flying objects of equipment.

The proposed microblock contains coordinate-wise, in one case, a wedge-shaped vertical junction, in the other, a terrace-shaped vertical junction with ICs located symmetrically under each other, including their hollow profiles with film elements of working topologies associated with the surfaces of dielectric carriers (technically justified thicknesses of 70-100 μm), in the body of which vertically through cavities are symmetrically combined with working topologies with the formation of overhanging film edges over them elements of working topologies (microstrips), where the typical angle β passes into the angle β ′, varying in the range of 135 ° ≤β′≤150 °. The angle β ′ between the generatrix of the microprofile and the overhanging edge above it of the topological conductive structures forms a twisted microprofile, see p.635-661 reference book [Quick reference to the designer of electronic equipment. Under. ed. P.P. Varlamova. M .: “Owls. Radio ”, 1972. - 856 S.].

It should be noted that there is a tendency in world practice (“Electronics and Information Technologies” in the book [Hartman U. The Charm of Nanotechnology / U. Hartman; translated from German - 2nd ed., Revised M .: BINOM. Laboratory of Knowledge , 2010. - 173c.]) Using silicon (the most expensive technology) technology and placing up to 540 million elements on an area of 64 mm, work is underway to develop even larger areas of silicon wafers. Integrity along the third coordinate is out of the question. With layer-by-layer arrangement along the third coordinate of boards with topological structures and proposed interlayer IC junctions, taking each maximum thickness of 100 μm into a set, vertically, the prospect of an increase in the integration coefficient to 5 · 10 ⁵ will become a reality, including all the combined topological structures of the IC and junctions in one cubic centimeter (figure 5). There will be an opportunity to assess the level of miniaturization of high-speed opto-and radio-electronic systems and determine the scope of application of such system devices.

In this case, vacuum integrated systems, for example, with a volume of one cubic centimeter, will have, in the future, one common magnetic system, which is very important when the volume and weight of individual products and equipment as a whole play a large role.

The present invention is characterized by drawings, which depict:

figure 1 - microprofile: 1 - dielectric carrier, 2 - conductive film, 3 - microcavity, 4 - forming, Δ - edge, L-gap, β - angle, h - the height of the microcavity;

figure 2 - microprofile: 1 - dielectric carrier, 2 - conductive film, 3 - microcavity, 4 - forming, Δ - edge, L-gap, β - constant angle, β ′ - angle changed, h - height of the microcavity;

figure 3 - waveguide transition interlayer type "wedge": 1, 2-dielectric carrier, 3, 4 - microwaves, 5, 6 - conductive films, 7 - connection, AB - ribs of microprofiles, γ - angle of inclination of the conductive film;

figure 4 - waveguide junction of the interlayer type "terrace": 1, 2-dielectric carriers, 3, 4 - microcavities, 5, 6 - conductive films, AB - ribs of microprofiles, γ - angle of inclination of the conductive film, h - thickness of the dielectric carrier ;

figure 5 - volume microblock of vacuum integrated circuits of logical microwave systems of the backward wave (model from the ZS type "counter pins"): 1, 2 - dielectric carriers, 3, 4 - conductive film elements of the working topology, 5 - transition microcavity type wedge ", 6 - microcavity of the transition type" terrace ", h - thickness of dielectric carriers. The model also shows the shapes of interlayer vacuum microwave transitions.

The proposed model of a volumetric microblock of vacuum integrated circuits of logical microwave systems of the backward wave (see Fig. 5) contains dielectric carriers 1 and 2, film elements 3 and 4 of the working topology, which are designed to carry certain electric charges and effective interaction with the electromagnetic field of the environment . In dielectric carriers 1 and 2, thickness h, selected from a size range of 70-100 μm (depending on strength parameters), vertically through microcavities are made: 5 - microcavity of the microwave transition of the wedge type, 6 - microcavity of the microwave transition of the terrace type " Each planar integrated structure contains vertically through microwave microprofiles, forming vertically through microwave microcavities, with the formation of overhanging edges of the conductive film elements of the working topology and the angles between them and the walls of the microcavities of a given size, the microcavities in the dielectric carriers are vertically transparent and with angles β -constant (see Fig. 1) and β ′ - alternating between their walls - forming - and the overhanging edges of the conductive film elements of the working topologies (see ig. 2), selected: in the first case from the range of 90 ° <β≤135 °, in the second case from the range of 135 ° ≤β′≤150 °, and the microprofiles, in the places of interlayer connections in contact with the film elements 3 and 4, form wedge and terrace structures. The boards are connected by connection 7 in technically feasible places.

The proposed volumetric microblock model of vacuum integrated circuits allows you to create with almost all thin and thick film elements a complete system of logical elements. This typical design of the microblock model can be used in the design and manufacture of vacuum logic elements in the microwave range, as well as in the creation of integrated optical systems.

Using the model implementation examples, one can describe the operation of microblocks of two logical elements.

Implementation examples

6 is a three-dimensional microblock of vacuum microwave IC IS ZS "Trigger": a): 1, 2 - single-layer planar vacuum microcircuits, 7, 8 - microcavities of the wedge and terrace type, respectively; b): 2 - lower microcircuit, f ₁ and f ₂ - microwave frequencies of the ES, and b - directions of movement of microwave waves, Vh. - chip input, Out. - the output of the chip, E _p 1 and E _p 2 - the direction of the radiation of electronic flows; c): 1 - top microcircuit, 3 - vertically through microwave pass-through type wedge, 4 - vertically through microwave pass-through type terrace, 5 - conductive films, 6 - connection. Several other microblock designs of a microwave circuit of a trigger (storage device) constructed from two keys are possible.

The operation of the trigger with information encoding 1 - the presence of a signal, 0 - the absence of such. In the initial state, the trigger generates oscillations of one of the frequencies f ₁ or f ₂ . When a sufficient amplitude and duration is supplied to the input of the radio pulse device, with a frequency close to the frequency of the device generation in the initial state, the trigger is switched. The amplitude required for switching depends on the duration of the incoming radio pulse. Stability is achieved by the fact that the generation of frequency f ₁ in the second section of one backward wave system prevents the development of frequency fluctuations f ₂ in the second section of the other due to the preliminary modulation of the beam and vice versa.

7 is a volume microblock of vacuum microwave IC IS AP logical element "OR - I": a): 1, 2 - microcircuit upper and lower, b): 2 - microcircuit lower, f ₁ and f ₂ - microwave frequency AP , c and d are the directions of motion of the microwave waves, F _{1 in} and F _{2 in} are microwave inputs, E _p 1 and E _p 2 are the directions of the radiation of electron flows; c): 1 - the upper microcircuit, f ₁ and f ₂ - the microwave frequency of the ES, E _p 3 and E _p 4 - the directions of electronic flows, F _o - the output of the microblock; d): 1 - upper microcircuit, 2 - lower microcircuit, 3, 4 - conductive films, L ₁ and L ₂ - interstrip gap, Δ ₁ and Δ ₂ - overhanging edges.

Four vacuum microwave keys are connected symmetrically in the design. The specific function of the accepted encoding performed by this logic element, say 0 - frequency f ₁ , 1 - frequency f _2, or vice versa. When you save the specified encoding, the function of the logical element is changed by changing the operating frequencies of the sections f ₁ to f ₂ and f ₂ to f ₁ . The existence of two generator sections with a frequency f ₁ (second and third backward wave systems) ensures the presence of an output signal when an input signal is supplied to at least one microblock input, and the "OR" function is performed. When a signal is applied to another input of the microblock, the coding of the "OR" function will change to "AND".

The proposed design of the model of the microblock IC with interlayer gap, vertically through transitions with a given coordinate-positional arrangement in dielectric carriers in the layers allows the creation of three-dimensional (3D) vacuum integrated circuits of devices of the backward wave systems. The microblock design model of vacuum ICs makes it possible to obtain a complete system of logical elements of highly reliable computers for navigation control systems of moving objects of technology. Radio-pulse analog-to-digital presentation of information is superior in reliability and quality to digital.

LITERATURE

1. Sinitsyn N.I. Possibilities of vacuum microelectronics on the way to the construction of microwave vacuum integrated circuits. / N.I. Sinitsyn, Yu.V. Gulyaev, N.D. Devyatkov and [other] // Radio Engineering, 1999. M .. S.8-18.

2. Patent RU 2404481 C1. A microprofile of the structure of a vacuum integrated microwave circuit and a method for its manufacture / Podvigalkin V.Ya. 2010. Bull. Number 32.

3. Application No. 2011111616 dated 07/27/2011. A microprofile of the structure of a vacuum integrated microwave circuit and a method for its preparation / V.Ya. Podvigalkin.

4. A.S. USSR No. 1522992. Microwave trigger. / Golant M.B., Gritsenko A.V., Efimov B.N., Zakharchenko Yu.F., Sinitsyn N.I. // 1989.

5. A.S. USSR No. 1600572. Microwave trigger / Golant MB and [other] // 1990.

6. A.S. USSR No. 1600573. Microwave trigger / Golant MB and [other] // 1990.

Claims (1)

A microblock of volumetric integrated vacuum circuits of logical microwave structures containing in one volume one another planar integrated circuits with a given coordinate-positional arrangement on carrier substrates, characterized in that each planar integrated structure contains vertically through microprofiles forming vertically through microcavities with the formation above them the overhanging edges of the film elements of the working topology and the angles between them and the walls of the microcavities of a given size, the microcavities in the dielectric The carriers made vertically through and with angles β-constant and β′-variable between their walls — generatrix — and the overhanging edges of the film elements of the working topologies, selected: in the first case from the range 90 ° <β≤135 °, in the second case from the range 135 ° ≤β ′ <150 °, and the microprofiles, in the places of interlayer connections in contact with the film elements, form wedge and terrace structures in dielectric carriers in which the thicknesses are selected from a size range of 70-100 microns.

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