RU238149U1 - TUNABLE FREQUENCY-SELECTIVE DEVICE BASED ON GAMMADION STRUCTURES - Google Patents

Abstract

The invention relates to frequency-selective microwave stripline devices, specifically selective rejector devices, and can be used in microwave transceivers. The tunable frequency-selective device is implemented by placing a two-gamma-ion resonator on one side of a dielectric substrate, above a section of stripline transmission line, on which a rotation point is located. The rotation point is oriented toward the center of the conducting stripline and is located midway between the gamma-ion resonators. Mechanical rotation of the two-gamma-ion resonator, along with the dielectric substrate on which it is placed, is performed around this rotation point to tune the resonant frequency. 1 fig.

Description

The utility model relates to frequency-selective microwave devices of the strip type, namely to frequency-selective devices of the rejector type, and can find application in microwave (UHF or UHF) frequency range receiving and transmitting devices.

An analogue of the proposed device is a rejection filter built on a chirally coupled (chiral-dependent) pair of single-filament gammadions (Malyshev I.V., Dubchenko N.I. Study of the conductive properties of a two-gammadion matched configuration for a conductive section of a stripline transmission line. // Journal of Radio Electronics. - 2024. - No. 9. https://doi.org/10.30898/1684-1719.2024.9.11), in which frequency-selective properties are manifested as a result of placing conductive gammadion elements (single-filament (S-shaped) or double- and multi-filament) on the reverse side of the dielectric substrate relative to the conductive stripline transmission line (coplanar or microstrip).

The essential design features common to the claimed device are:

- strip type conductive transmission line;

- metallized strip segments (in the claimed device, such a segment is a resonator in the form of a sequentially located pair of single-pass gamma-dions).

The disadvantage of the mentioned analogue is the impossibility of tuning the resonant frequency.

The prototype of the proposed device is a device that uses a method of reconfiguring a notch two-gammadion filter by rotating it relative to a point located in the middle of the distance between the gammadions and oriented to the middle of the conducting strip of the stripline transmission line (Malyshev I.V., Dubchenko N.I. Studies of the selective properties of a pair of single-ended gammadions during their rotation relative to the midpoints of the conducting section of the stripline transmission line // Infocommunication and radioelectronic technologies (based on the materials of the 34th International Conference "Microwave Engineering and Telecommunication Technologies" September 8-14, 2024 Sevastopol, Crimea, Russia). 2024. Vol. 7, No. 3. pp. 311-325.).

The essential design features common to the claimed device are:

- strip-type transmission line (in the claimed device, a coplanar transmission line is selected, equipped with two metallized areas (polygons) around the conductive strip);

- two strip segments (in the claimed device this is a sequentially located pair of single-pass gamma-dion diodes).

The disadvantage of the mentioned prototype is the method of implementing the resonant frequency tuning only in a specifically selected fixed location of the given gamma-dion pair and the impossibility of implementing the said mobile independent frequency tuning.

The technical result consists in creating an independent selective device (module) separate from the main transmission line, which provides the possibility of mechanical frequency tuning by rotating a pair of single-pass gamma-dion couplers relative to a point located in the middle of the distance between them and having a projection into the center of a conductive strip located on the reverse side of the dielectric substrate of the transmission line.

In order to achieve the technical result in a selective device based on a rejector two-gammadion resonator consisting of a strip-type transmission line (in the claimed device, a coplanar transmission line equipped with metallized polygons around a conducting strip), the two-gammadion resonator is placed on one side of a dielectric substrate above the strip-type transmission line, on which a rotation point is located, oriented toward the center of the conducting strip of the strip-type transmission line and located at a point located in the middle of the distance between them around which, for the purpose of mechanically retuning the resonant frequency, mechanical rotation of this two-gammadion resonator is carried out, together with the dielectric substrate on which it is placed.

The claimed utility model is illustrated by figure 1, where 1 is a dielectric material (a substrate of a two-gamma-ion design) having a round shape, 2 is a resonator of two consecutive gamma-ion designs, 3 are sections of a metallized polygon of a coplanar transmission line, 4 is a transmitting strip of a transmission line, 5 is a point relative to which the rotation of a two-ring split resonator together with a dielectric substrate 1 is carried out around a point of a projected conducting strip 4.

The proposed frequency-selective device operates as follows. For operation, the device (a series two-gammadion resonator located on a dielectric substrate) is positioned on a section of the stripline conducting line of the device, above the conducting strip of the stripline transmission line (in the claimed device, coplanar). The resonant frequency is changed by varying its spatial orientation relative to the transmission line through mechanical rotation about a point located midway between the gammadions, oriented toward the center of the conducting strip. This mechanical rotation can be accomplished, for example, using an additionally installed protrusion or handle (not shown in Fig. 1) or by other means. After providing the required resonant frequency, by mechanically rotating the two-gammadion resonator on the substrate relative to the rotation point oriented toward the center of the conducting strip of the strip-type transmission line and located in the middle of the distance between the gammadions, the location of the gammadion pair with the substrate relative to the transmitting strip is fixed in the selective device.

The technical and economic advantages of the claimed object over known ones lie in the possibility of mechanical frequency tuning of the claimed device at any arbitrarily selected location of the strip-type transmission line (at the discretion of the developer from the point of view of design feasibility).

Claims (1)

A tunable frequency-selective device based on gammadion structures, consisting of a coplanar transmission line equipped with metallized polygons around a conducting strip, a two-gammadion resonator located on a dielectric substrate, providing the possibility of rejection filtering and mechanical tuning of the resonant frequency of the filter, characterized in that the two-gammadion resonator is placed on one side of the dielectric substrate, which has a circular shape, above the coplanar transmission line, on which a rotation point is located, oriented to the center of the conducting strip of the coplanar transmission line and located in the middle of the distance between the gammadions of the resonator, around which mechanical rotation of the resonator is carried out together with the dielectric substrate.