RU2119698C1 - Варикап - Google Patents
Варикап Download PDFInfo
- Publication number
- RU2119698C1 RU2119698C1 RU95119346A RU95119346A RU2119698C1 RU 2119698 C1 RU2119698 C1 RU 2119698C1 RU 95119346 A RU95119346 A RU 95119346A RU 95119346 A RU95119346 A RU 95119346A RU 2119698 C1 RU2119698 C1 RU 2119698C1
- Authority
- RU
- Russia
- Prior art keywords
- film
- varicap
- substrate
- junction
- semiconductor
- Prior art date
Links
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 40
- 239000002800 charge carrier Substances 0.000 claims abstract description 12
- 230000015556 catabolic process Effects 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims abstract description 6
- 239000012535 impurity Substances 0.000 claims description 17
- 238000009826 distribution Methods 0.000 claims description 8
- 230000002441 reversible effect Effects 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 description 15
- 239000003990 capacitor Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000007423 decrease Effects 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 230000007935 neutral effect Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000002140 antimony alloy Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000007499 fusion processing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- -1 phosphorus ions Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
Landscapes
- Nitrogen And Oxygen Or Sulfur-Condensed Heterocyclic Ring Systems (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU95119346A RU2119698C1 (ru) | 1995-11-15 | 1995-11-15 | Варикап |
| PCT/RU1996/000313 WO1997018590A1 (fr) | 1995-11-15 | 1996-11-04 | Condensateur a tension commandee |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| RU95119346A RU2119698C1 (ru) | 1995-11-15 | 1995-11-15 | Варикап |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| RU95119346A RU95119346A (ru) | 1997-12-27 |
| RU2119698C1 true RU2119698C1 (ru) | 1998-09-27 |
Family
ID=20173815
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU95119346A RU2119698C1 (ru) | 1995-11-15 | 1995-11-15 | Варикап |
Country Status (2)
| Country | Link |
|---|---|
| RU (1) | RU2119698C1 (fr) |
| WO (1) | WO1997018590A1 (fr) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002050919A1 (fr) * | 2000-12-21 | 2002-06-27 | Kolesnikov, Vladimir Ilich | Dispositif semi-conducteur |
| RU2320050C1 (ru) * | 2006-05-15 | 2008-03-20 | Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") | Варикап |
| RU2447541C1 (ru) * | 2010-12-03 | 2012-04-10 | Федеральное государственное унитарное предприятие "Научно-исследовательский институт микроприборов-К" | Мдп-варикап |
| RU2569906C1 (ru) * | 2014-08-26 | 2015-12-10 | Акционерное общество "Научно-исследовательский институт микроприборов-К" (АО "НИИМП-К") | Многоэлементный мдп варикап |
| RU2614663C1 (ru) * | 2015-12-29 | 2017-03-28 | Общество с ограниченной ответственностью "Лаборатория Микроприборов" | Варикап и способ его изготовления |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080080334A (ko) * | 2005-11-24 | 2008-09-03 | 테크니쉐 유니버시테이트 델프트 | 버랙터 소자 및 저왜곡 버랙터 회로 배치 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3506888A (en) * | 1966-12-22 | 1970-04-14 | Siemens Ag | Voltage-responsive semiconductor capacitor |
| FR2344744A1 (fr) * | 1976-03-16 | 1977-10-14 | Hochvakuum Dresden Veb | Montage de support sur paliers pour une turbopompe moleculaire |
| EP0452035A1 (fr) * | 1990-04-06 | 1991-10-16 | Ueyama, Ken-ichi | Diode semi-conductrice à capacité variable |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3962713A (en) * | 1972-06-02 | 1976-06-08 | Texas Instruments Incorporated | Large value capacitor |
| FR2374744A1 (fr) * | 1976-12-17 | 1978-07-13 | Thomson Csf | Diode a capacite variable du type " hyperabrupt ", et procede de fabrication d'une telle diode |
| RU2102819C1 (ru) * | 1994-03-14 | 1998-01-20 | Институт физики полупроводников СО РАН | Варактор |
| WO1995031010A1 (fr) * | 1994-05-10 | 1995-11-16 | Valery Moiseevich Ioffe | Diode varicap |
-
1995
- 1995-11-15 RU RU95119346A patent/RU2119698C1/ru active
-
1996
- 1996-11-04 WO PCT/RU1996/000313 patent/WO1997018590A1/fr not_active Ceased
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3506888A (en) * | 1966-12-22 | 1970-04-14 | Siemens Ag | Voltage-responsive semiconductor capacitor |
| FR2344744A1 (fr) * | 1976-03-16 | 1977-10-14 | Hochvakuum Dresden Veb | Montage de support sur paliers pour une turbopompe moleculaire |
| EP0452035A1 (fr) * | 1990-04-06 | 1991-10-16 | Ueyama, Ken-ichi | Diode semi-conductrice à capacité variable |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002050919A1 (fr) * | 2000-12-21 | 2002-06-27 | Kolesnikov, Vladimir Ilich | Dispositif semi-conducteur |
| GB2376343A (en) * | 2000-12-21 | 2002-12-11 | Valeriy Moiseevich Ioffe | Semiconductor device |
| RU2320050C1 (ru) * | 2006-05-15 | 2008-03-20 | Открытое акционерное общество "Научно-исследовательский институт полупроводниковых приборов" (ОАО "НИИПП") | Варикап |
| RU2447541C1 (ru) * | 2010-12-03 | 2012-04-10 | Федеральное государственное унитарное предприятие "Научно-исследовательский институт микроприборов-К" | Мдп-варикап |
| RU2569906C1 (ru) * | 2014-08-26 | 2015-12-10 | Акционерное общество "Научно-исследовательский институт микроприборов-К" (АО "НИИМП-К") | Многоэлементный мдп варикап |
| RU2614663C1 (ru) * | 2015-12-29 | 2017-03-28 | Общество с ограниченной ответственностью "Лаборатория Микроприборов" | Варикап и способ его изготовления |
Also Published As
| Publication number | Publication date |
|---|---|
| WO1997018590A1 (fr) | 1997-05-22 |
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