RU202978U1 - CASSETTE FOR SEMICONDUCTOR CRYSTALS - Google Patents

Abstract

The proposed utility model relates to semiconductor technology, namely, it can be used in the manufacture of crystals of semiconductor devices and microcircuits. The technical result of the proposed utility model is to increase labor productivity. This result is achieved by the fact that, in contrast to the known ones, in the proposed cassette for semiconductor crystals, consisting of a solid plate - a base with cells in the form of a parallelepiped for crystals and a lid covering the base, a through hole with a diameter of 0.3 mm <d <1 / 3b is formed in the bottom of each cell, where b is the smaller side of the crystal. 3 ill.

Description

The proposed utility model relates to semiconductor technology, namely, it can be used in the manufacture of crystals of semiconductor devices and microcircuits.

Known cassette for semiconductor crystals, consisting of a base of plastic in the form of a plate with cells in the form of a parallelepiped for crystals and a cover covering the base. The following base plate serves as a cover (see, for example, the Entegris catalog "Bare die, chip scale package handling" p. 28, on the website www.entegris.com).

Such a cassette is used for interoperative storage of crystals, as well as for supplying crystals to the consumer. The main disadvantage of such a cassette is its poor temperature resistance. before mounting, the crystals are additionally dried at a temperature of 120-150 ° C to remove water vapor and -OH groups from the surface.

This drawback is eliminated in the prototype, widely used in industry, a cassette for semiconductor crystals, consisting of a plate - a base made of metal with cells in the form of a parallelepiped for crystals and a cover that covers the base (see, for example, assembly drawing 4Pr5357.00.000SB).

The cell depth for the crystal is calculated based on the maximum crystal thickness + 0.1 ÷ 0.2 mm.

When calculating the linear dimensions, it is taken into account that the dimensions of the side of the cell should be less than the diagonal of the crystal, which limits the rotation of the crystal during transportation. The optimal cell size is the crystal side length +0.2 mm.

The use of metal as the material of the cassette, for example, aluminum alloys or stainless steel, allows the crystals to be dried at optimal temperatures.

The main disadvantage of this cassette is that it is impossible to control the electrical parameters using the probe control method on the crystals placed in these cassettes.

In the manufacture of crystals for critical equipment, for example, on hybrid microcircuits, there is a need to control the electrical parameters when the crystals are accepted by the customer (selective control) and 100% control when installing hybrid circuits. This is due to the fact that the control of microcircuit parameters is carried out on wafers with crystals before they are separated. After the separation of the wafers into crystals, hidden defects in the form of microcracks may appear, which affect the electrical parameters.

The electrical parameters can be checked after the crystals are unloaded and fixed on the vacuum stage of the multi-probe setup. However, after checking the electrical parameters, it is necessary to load suitable crystals into cassettes again, which reduces labor productivity. If the crystals are not unloaded from the cassettes when checking the electrical parameters, then when the probes installed to control the parameters are aligned, the crystal can move in the cell, which leads to scratches on the metallization and contact pads and, ultimately, to rejection of the crystals in appearance.

The technical result of the proposed utility model is to increase labor productivity.

This result is achieved by the fact that, in contrast to the known ones, in the proposed cassette for semiconductor crystals, consisting of a solid plate - a base with cells in the form of a parallelepiped for crystals and a cover that covers the base, a through hole with a diameter of 0.3 mm is formed in the bottom of each cell < d <1 / 3b, where b is the smaller side of the crystal.

The following base plate serves as a cover.

If the diameter of the through hole is less than 0.3 mm, then the effect of holding the crystal by vacuum will not be achieved.

When the diameter of the through hole is more than 1 / 3b, cracking of the crystal is possible due to the occurrence of mechanical stresses in the crystal when checking the electrical parameters.

The essence of the utility model is illustrated by figures.

FIG. 1 and 2 show a top view and a section of the proposed cassette, and FIG. 3 shows the application of the cassette.

The positions in FIG. 1-3 are indicated:

1 - plate - base;

2 - cell for crystals;

3 - holes in the cell;

4 - probes;

5 - crystal of a microcircuit or semiconductor device;

6 - a table with a vacuum suction cup of a multi-probe installation;

7 - vacuum.

In the base plate 1 made of heat-resistant material (aluminum, stainless steel, silicon, etc.), cells for crystals 2 and holes in them 3 are made by milling and drilling (see Figs. 1, 2).

After the operations of dividing the wafers into crystals, checking the appearance of the crystals, suitable crystals are placed in the proposed cassette. Next, a selective or 100% control of the electrical parameters of the crystals is carried out.

To do this, the crystals in the proposed cassette are placed on a table with a vacuum suction cup of a multi-probe installation 6 and secured with a vacuum 7. Then, probes 4 are installed on the contact pads of a crystal of a microcircuit or a semiconductor device 5 and electrical parameters are measured (see Fig. 3).

Due to the presence of a hole in the cell, the crystal of the microcircuit or semiconductor device is fixed in place and does not move when the probes are installed on the contact pads of the crystal and the subsequent measurement of electrical parameters, which eliminates the appearance of scratches on the contact pads and the active zone of the crystal.

Table 1 shows the results of checking the appearance of crystals of serial microcircuits after controlling the electrical parameters using the proposed cassette. As can be seen from Table 1, the use of the proposed cassette allows checking

electrical parameters of crystals without damaging them, and to exclude the operation of unloading crystals and their attachment to the vacuum table.

Claims (1)

A cassette for semiconductor crystals, consisting of a solid plate - a base with parallelepiped-shaped cells for crystals and a cover covering the base, characterized in that a through hole with a diameter of 0.3 mm <d <1 / 3b is formed in the bottom of each cell, where b is the smaller side of the crystal.

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