RU2017129456A - Способ изготовления гибких органических-неорганических слоистых материалов - Google Patents
Способ изготовления гибких органических-неорганических слоистых материалов Download PDFInfo
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- RU2017129456A RU2017129456A RU2017129456A RU2017129456A RU2017129456A RU 2017129456 A RU2017129456 A RU 2017129456A RU 2017129456 A RU2017129456 A RU 2017129456A RU 2017129456 A RU2017129456 A RU 2017129456A RU 2017129456 A RU2017129456 A RU 2017129456A
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- protective film
- layered material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
- H10K50/8445—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/30—Organic light-emitting transistors
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Inorganic Chemistry (AREA)
- Laminated Bodies (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
- Wrappers (AREA)
- Electroluminescent Light Sources (AREA)
Claims (19)
1. Способ изготовления слоистого материала, включающий
(а) осаждение неорганического слоя посредством процесса осаждения атомных слоев, и
(б) осаждение органического слоя, содержащего селен, посредством процесса осаждения молекулярных слоев.
2. Способ по п. 1, где для осаждения органического слоя, в процессе осаждения молекулярных слоев применяют селенол.
3. Способ по п. 1 или 2, где для осаждения органического слоя, в процессе осаждения молекулярных слоев применяют диселенол.
4. Способ по любому из пп. 1-3, где для осаждения органического слоя, в процессе осаждения молекулярных слоев применяют ароматический селенол.
5. Способ по любому из пп. 1-4, где для осаждения неорганического слоя, в процессе осаждения атомных слоев применяют соединение, содержащее А1.
6. Способ по любому из пп. 1-5, где неорганический слой осаждают в результате 4-150 циклов осаждения атомных слоев.
7. Слоистый материал, содержащий
(а) неорганический слой и
(б) органический слой, содержащий селен.
8. Слоистый материал по п. 7, где органический слой включает селен в степени окисления -2, -1 или 0.
9. Слоистый материал по п. 7 или 8, где неорганический слой содержит АlOх(ОН)у, где 0≤х≤1,5; 0≤у≤3 и 2х+у=3.
10. Слоистый материал по любому из пп. 7-9, где неорганический слой имеет толщину, которая составляет 0,4-15 нм.
11. Защитная пленка, содержащая слоистый материал по любому из пп. 7-10.
12. Защитная пленка по п. 11, где защитная пленка дополнительно содержит полимерную подложку.
13. Защитная пленка по п. 11 или 12, где защитная пленка дополнительно содержит выравнивающий слой.
14. Применение защитной пленки по любому из пп. 11-13 для герметизации, упаковки, или пассивации.
15. Электронное устройство, содержащее защитную пленку по любому из пп. 11-13.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP15151839.6 | 2015-01-20 | ||
| EP15151839.6A EP3048185A1 (en) | 2015-01-20 | 2015-01-20 | Process for producing flexible organic-inorganic laminates |
| EP15161121.7 | 2015-03-26 | ||
| EP15161121 | 2015-03-26 | ||
| PCT/EP2015/080988 WO2016116245A1 (en) | 2015-01-20 | 2015-12-22 | Process for producing flexible organic-inorganic laminates |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| RU2017129456A true RU2017129456A (ru) | 2019-02-22 |
| RU2017129456A3 RU2017129456A3 (ru) | 2019-07-17 |
| RU2736197C2 RU2736197C2 (ru) | 2020-11-12 |
Family
ID=55027749
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| RU2017129456A RU2736197C2 (ru) | 2015-01-20 | 2015-12-22 | Способ изготовления гибких органических-неорганических слоистых материалов |
Country Status (12)
| Country | Link |
|---|---|
| US (1) | US10988844B2 (ru) |
| EP (1) | EP3247819A1 (ru) |
| JP (2) | JP2018505968A (ru) |
| KR (1) | KR20170103827A (ru) |
| CN (1) | CN107208265B (ru) |
| BR (1) | BR112017015636A2 (ru) |
| CA (1) | CA2971016A1 (ru) |
| MX (1) | MX2017009473A (ru) |
| RU (1) | RU2736197C2 (ru) |
| SG (1) | SG11201705023SA (ru) |
| TW (1) | TW201708610A (ru) |
| WO (1) | WO2016116245A1 (ru) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106414799A (zh) * | 2014-06-12 | 2017-02-15 | 巴斯夫涂料有限公司 | 用于制造可挠性有机‑无机层合物的方法 |
| EP3247819A1 (en) | 2015-01-20 | 2017-11-29 | BASF Coatings GmbH | Process for producing flexible organic-inorganic laminates |
| CA2978031A1 (en) | 2015-03-25 | 2016-09-29 | Basf Coatings Gmbh | Process for producing flexible organic-inorganic laminates |
| EP3531462A1 (en) * | 2018-02-23 | 2019-08-28 | BASF Coatings GmbH | Transparent conductive film |
| CN108666421A (zh) * | 2018-05-23 | 2018-10-16 | 京东方科技集团股份有限公司 | 柔性基底、有机电致发光二极管显示基板和显示装置 |
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| JPS5289926A (en) * | 1976-01-22 | 1977-07-28 | Olympus Optical Co Ltd | Electrophotographic light sensitive plate |
| SE462454B (sv) | 1988-11-10 | 1990-06-25 | Pharmacia Ab | Maetyta foer anvaendning i biosensorer |
| US6690044B1 (en) * | 1993-03-19 | 2004-02-10 | Micron Technology, Inc. | Approach to avoid buckling BPSG by using an intermediate barrier layer |
| US6674121B2 (en) | 2001-12-14 | 2004-01-06 | The Regents Of The University Of California | Method and system for molecular charge storage field effect transistor |
| US7132678B2 (en) | 2003-03-21 | 2006-11-07 | International Business Machines Corporation | Electronic device including a self-assembled monolayer, and a method of fabricating the same |
| US7673970B2 (en) | 2004-06-30 | 2010-03-09 | Lexmark International, Inc. | Flexible circuit corrosion protection |
| EP1712298B1 (en) * | 2005-04-13 | 2009-06-10 | Universität Heidelberg | Organic thin film insulator |
| JP2007253589A (ja) * | 2006-03-27 | 2007-10-04 | Fujifilm Corp | バリア性フィルム基板および有機電界発光素子 |
| US7531293B2 (en) * | 2006-06-02 | 2009-05-12 | International Business Machines Corporation | Radiation sensitive self-assembled monolayers and uses thereof |
| DE102006048216A1 (de) | 2006-10-11 | 2008-04-17 | Wacker Chemie Ag | Laminate mit thermoplastischen Polysiloxan-Harnstoff-Copolymeren |
| US9660205B2 (en) * | 2007-06-22 | 2017-05-23 | Regents Of The University Of Colorado | Protective coatings for organic electronic devices made using atomic layer deposition and molecular layer deposition techniques |
| EP2188818A4 (en) * | 2007-08-31 | 2013-01-09 | Atotech Deutschland Gmbh | METHODS OF TREATING A SURFACE TO PROMOTE THE BONDING OF ONE OR MORE MOLECULES HAVING AN INTEREST AND COATINGS AND DEVICES FORMED THEREFROM |
| WO2009034446A2 (en) * | 2007-09-12 | 2009-03-19 | Australia Diamonds Limited | A method of assembly of two components |
| JP5253932B2 (ja) * | 2008-09-04 | 2013-07-31 | 東京エレクトロン株式会社 | 成膜装置、基板処理装置、成膜方法及び記憶媒体 |
| WO2010068619A1 (en) * | 2008-12-08 | 2010-06-17 | The Trustees Of The University Of Pennsylvania | Organic semiconductors capable of ambipolar transport |
| JP2010142881A (ja) * | 2008-12-16 | 2010-07-01 | Fujifilm Corp | 有機−無機複合体層を備える構造体、およびその製造方法 |
| EP2360293A1 (en) | 2010-02-11 | 2011-08-24 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Method and apparatus for depositing atomic layers on a substrate |
| US10522695B2 (en) * | 2011-01-27 | 2019-12-31 | Vitriflex, Inc. | Inorganic multilayer stack and methods and compositions relating thereto |
| EP2762289A4 (en) * | 2011-09-26 | 2015-05-06 | Nippon Light Metal Co | ALUMINUM-RESIN BODY AND METHOD OF MANUFACTURING THEREOF |
| US10319862B2 (en) * | 2012-03-09 | 2019-06-11 | Versum Materials Us, Llc | Barrier materials for display devices |
| US20150132587A1 (en) * | 2012-04-26 | 2015-05-14 | Konica Minolta, Inc. | Gas barrier film and electronic device using the same |
| JP6118102B2 (ja) * | 2012-12-21 | 2017-04-19 | 東京エレクトロン株式会社 | 基板位置検出装置及びこれを用いた基板処理装置、成膜装置 |
| WO2014135390A1 (de) | 2013-03-06 | 2014-09-12 | Basf Se | Tintenzusammensetzung zur herstellung halbleitender dünnschicht-filme |
| WO2014165426A1 (en) | 2013-04-01 | 2014-10-09 | Basf Corporation | Flame retardant systems |
| CN107075678A (zh) | 2014-01-27 | 2017-08-18 | 巴斯夫欧洲公司 | 产生薄无机膜的方法 |
| CN106414799A (zh) | 2014-06-12 | 2017-02-15 | 巴斯夫涂料有限公司 | 用于制造可挠性有机‑无机层合物的方法 |
| BR112016028242B1 (pt) | 2014-06-13 | 2022-08-16 | Basf Coatings Gmbh | Processo para produzir um laminado |
| WO2016012274A1 (en) | 2014-07-21 | 2016-01-28 | Basf Se | Organic-inorganic tandem solar cell |
| EP3247819A1 (en) | 2015-01-20 | 2017-11-29 | BASF Coatings GmbH | Process for producing flexible organic-inorganic laminates |
| JP2018514942A (ja) | 2015-03-12 | 2018-06-07 | ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ | 薄い無機膜の生成方法 |
| CA2978031A1 (en) | 2015-03-25 | 2016-09-29 | Basf Coatings Gmbh | Process for producing flexible organic-inorganic laminates |
-
2015
- 2015-12-22 EP EP15817355.9A patent/EP3247819A1/en not_active Withdrawn
- 2015-12-22 JP JP2017538335A patent/JP2018505968A/ja active Pending
- 2015-12-22 RU RU2017129456A patent/RU2736197C2/ru active
- 2015-12-22 CN CN201580073853.0A patent/CN107208265B/zh not_active Expired - Fee Related
- 2015-12-22 US US15/543,788 patent/US10988844B2/en not_active Expired - Fee Related
- 2015-12-22 CA CA2971016A patent/CA2971016A1/en not_active Abandoned
- 2015-12-22 MX MX2017009473A patent/MX2017009473A/es unknown
- 2015-12-22 WO PCT/EP2015/080988 patent/WO2016116245A1/en not_active Ceased
- 2015-12-22 BR BR112017015636A patent/BR112017015636A2/pt not_active Application Discontinuation
- 2015-12-22 SG SG11201705023SA patent/SG11201705023SA/en unknown
- 2015-12-22 KR KR1020177019796A patent/KR20170103827A/ko not_active Withdrawn
-
2016
- 2016-01-19 TW TW105101575A patent/TW201708610A/zh unknown
-
2021
- 2021-02-08 JP JP2021018011A patent/JP2021091969A/ja not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| CA2971016A1 (en) | 2016-07-28 |
| BR112017015636A2 (pt) | 2018-03-13 |
| RU2017129456A3 (ru) | 2019-07-17 |
| MX2017009473A (es) | 2017-11-02 |
| CN107208265A (zh) | 2017-09-26 |
| EP3247819A1 (en) | 2017-11-29 |
| SG11201705023SA (en) | 2017-07-28 |
| US10988844B2 (en) | 2021-04-27 |
| RU2736197C2 (ru) | 2020-11-12 |
| WO2016116245A1 (en) | 2016-07-28 |
| JP2018505968A (ja) | 2018-03-01 |
| CN107208265B (zh) | 2021-03-23 |
| KR20170103827A (ko) | 2017-09-13 |
| JP2021091969A (ja) | 2021-06-17 |
| US20180010249A1 (en) | 2018-01-11 |
| TW201708610A (zh) | 2017-03-01 |
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