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RU2002121108A - Plant for producing polycrystalline silicon - Google Patents

Plant for producing polycrystalline silicon

Info

Publication number
RU2002121108A
RU2002121108A RU2002121108/15A RU2002121108A RU2002121108A RU 2002121108 A RU2002121108 A RU 2002121108A RU 2002121108/15 A RU2002121108/15 A RU 2002121108/15A RU 2002121108 A RU2002121108 A RU 2002121108A RU 2002121108 A RU2002121108 A RU 2002121108A
Authority
RU
Russia
Prior art keywords
cooler
hydrogen
supply line
reactor
refrigerator
Prior art date
Application number
RU2002121108/15A
Other languages
Russian (ru)
Other versions
RU2224715C1 (en
Inventor
Виктор Кириллович Гупалов
Степан Александрович Муравицкий
Петр Иннокентьевич Панов
Станислав Иванович Петров
В чеслав Александрович Харченко
Вячеслав Александрович Харченко
Original Assignee
Федеральное государственное унитарное предпри тие "Красно рский машиностроительный завод"
Федеральное государственное унитарное предприятие "Красноярский машиностроительный завод"
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Федеральное государственное унитарное предпри тие "Красно рский машиностроительный завод", Федеральное государственное унитарное предприятие "Красноярский машиностроительный завод" filed Critical Федеральное государственное унитарное предпри тие "Красно рский машиностроительный завод"
Priority to RU2002121108/15A priority Critical patent/RU2224715C1/en
Application granted granted Critical
Publication of RU2224715C1 publication Critical patent/RU2224715C1/en
Publication of RU2002121108A publication Critical patent/RU2002121108A/en

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  • Silicon Compounds (AREA)

Claims (2)

1. Установка для получения поликристаллического кремния, содержащая реактор водородного восстановления кремния, магистраль подачи водорода, включающая подогреватель водорода, и магистраль подачи жидкого трихлорсилана, подключенные к соответствующим входам испарителя-смесителя, выход которого магистралью парогазовой смеси связан с входом реактора, магистраль отработанной парогазовой смеси, включающая охладитель (холодильник) парогазовой смеси, подключенную к выходу реактора, отличающаяся тем, что магистраль отработанной парогазовой смеси дополнительно включает предварительный охладитель, размещенный между реактором и охладителем (холодильником), а подогреватель водорода выполнен в виде теплообменника (с разделительной стенкой, бесконтактного), включенного в магистраль отработанной парогазовой смеси, между предварительным охладителем и охладителем (холодильником).1. Installation for producing polycrystalline silicon, containing a hydrogen hydrogen reduction reactor, a hydrogen supply line including a hydrogen heater, and a liquid trichlorosilane supply line connected to the respective inputs of the mixer-evaporator, the outlet of which is connected to the reactor inlet by a steam-gas mixture line, an exhaust steam-gas mixture line including a cooler (refrigerator) of the vapor-gas mixture connected to the outlet of the reactor, characterized in that the exhaust gas and steam pipeline The first mixture additionally includes a pre-cooler located between the reactor and the cooler (refrigerator), and the hydrogen heater is made in the form of a heat exchanger (with a separation wall, non-contact), included in the exhaust gas-vapor mixture line, between the pre-cooler and the cooler (refrigerator). 2. Установка по п.1, отличающаяся тем, что испаритель-смеситель выполнен в виде вертикального кожухотрубного теплообменника, к верхней коллекторной камере которого подключена магистраль подачи жидкого трихлорсилана, а нижняя коллекторная камера связана с магистралью подачи водорода через межтрубное пространство.2. Installation according to claim 1, characterized in that the evaporator-mixer is made in the form of a vertical shell-and-tube heat exchanger, to the upper collector chamber of which a liquid trichlorosilane supply line is connected, and the lower collector chamber is connected to the hydrogen supply line through the annular space.
RU2002121108/15A 2002-08-02 2002-08-02 Installation for polycrystalline silicon production RU2224715C1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
RU2002121108/15A RU2224715C1 (en) 2002-08-02 2002-08-02 Installation for polycrystalline silicon production

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
RU2002121108/15A RU2224715C1 (en) 2002-08-02 2002-08-02 Installation for polycrystalline silicon production

Publications (2)

Publication Number Publication Date
RU2224715C1 RU2224715C1 (en) 2004-02-27
RU2002121108A true RU2002121108A (en) 2004-02-27

Family

ID=32173113

Family Applications (1)

Application Number Title Priority Date Filing Date
RU2002121108/15A RU2224715C1 (en) 2002-08-02 2002-08-02 Installation for polycrystalline silicon production

Country Status (1)

Country Link
RU (1) RU2224715C1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2313485C2 (en) * 2005-10-10 2007-12-27 Юрий Александрович Касаткин Monosilane preparation process
RU2334677C1 (en) * 2007-02-06 2008-09-27 Федеральное государственное унитарное предприятие "Горно-химический комбинат" Polycrystalline silicon producing device
BRPI0813442A8 (en) 2007-06-19 2015-12-01 Zakrytoe Aktsionernoe Obschestvo Solar Si METHOD FOR PRODUCTION OF POLYCRYSTALLINE SILICON FROM A SOLUTION OF HYDROSILICOFLUORIDIC ACID, AND INSTALLATION FOR PRODUCTION OF POLYCRYSTALLINE SILICON FROM A SOLUTION OF FLUOROSILICIC ACID IN THE FORM OF A POWDER WITH SPHERICAL-SHAPED PARTICLES
CN108217656A (en) * 2017-04-01 2018-06-29 上海韵申新能源科技有限公司 A kind of efficient polycrystalline silicon reduction furnace heat recovery system and reduction production
CN116282034B (en) * 2023-02-24 2025-11-07 江苏鑫华半导体科技股份有限公司 Nano silicon, preparation method thereof and lithium ion battery cathode material

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19735378A1 (en) * 1997-08-14 1999-02-18 Wacker Chemie Gmbh Process for the production of high-purity silicon granules
RU2136590C1 (en) * 1998-10-12 1999-09-10 Государственный научный центр РФ Государственный научно-исследовательский и проектный институт редкометаллической промышленности "Гиредмет" Polycrystalline silicon production process

Also Published As

Publication number Publication date
RU2224715C1 (en) 2004-02-27

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Legal Events

Date Code Title Description
PC43 Official registration of the transfer of the exclusive right without contract for inventions

Effective date: 20100616

PD4A Correction of name of patent owner