RU1568805C - Device for microwave-plasma treatment of materials - Google Patents

Abstract

FIELD: plasma technology. SUBSTANCE: gas microwave-energy activated in gas duct passed through waveguide enters reaction chamber wherein it gets on part being treated. Quantity of active gas particles and their energy flux can be controlled by varying microwave power and displacing pedestal electrode in axial direction relative to gas duct level which improves etching or anodizing speed. Independent feed of nonactivated gas or superposition of high-frequency voltage by means of gas-distributing electrode also encourage this. Heating and cooling systems of pedestal electrode improve quality of polymeric layers deposited on part. EFFECT: improved efficiency of treatment, enlarged functional capabilities. 2 cl, 2 dwg

Description

 The invention relates to plasma technology, and more particularly to microwave plasmatrons intended for plasma processing of materials at reduced pressures, and can be used to conduct etching, cleaning, deposition, and the formation of dielectrics on semiconductors and metals.

 The aim of the invention is to increase processing efficiency (for example, increasing the etching or deposition rate) and expanding the technological capabilities of devices for plasma processing of materials.

 Figure 1 schematically shows a device, a longitudinal section; figure 2 is the same, cross section.

 The device contains a reaction chamber 1, gas ducts 2, waveguides 3, a short-circuit piston 4, a microwave generator 5, a pedestal electrode 6, a reaction chamber cover 7, electromagnets 8, a gas distribution electrode 9.

 Device microwave plasma processing of materials works as follows. The microwave energy from the generator 5 through the waveguide 3 is supplied to the region of the gas ducts 2, in which the plasma is ignited and from where the activated gas enters the reaction chamber 1. By moving the short-circuit piston, the absorbed power in each gas duct is adjusted and the amount of active particles in the corresponding place of the reaction is regulated chambers 1. Another gas or mixture of gases is supplied through the gas-distributing electrode 9 to the reaction chamber 1, where it (or their) interacts with the gas (or gases), They can be drawn through the gas inlets 2, or with a workpiece, and thus a deposition or etching process is carried out.

 If it is necessary to improve the quality or speed of the etching process (deposition, anodization), a constant offset of the corresponding sign (plus or minus) is applied to any of the electrodes 6, 9. For the same purpose, axial movement of both electrodes is provided. Changing the distance between the electrodes regulates the energy of the flow of active particles interacting with the processed solid (semiconductor, dielectric, metal). In addition, it is possible to apply RF energy to any of the electrodes 6, 9, ground it, and thereby conduct plasma treatment of the surface of a solid with a combination of two types of plasma, RF and microwave. This combination expands technological capabilities, as it allows you to change the composition of the plasma over a wider range.

Claims (2)

 1. DEVICE FOR MICROWAVE PLASMA PROCESSING OF MATERIALS, containing a reaction chamber, an envelope of its rectangular waveguide, electromagnets, gas ducts passing perpendicular to the camera axis through the waveguide, a pedestal electrode made with the possibility of axial movement, characterized in that, in order to increase processing efficiency by increasing the etching and deposition rates, as well as regulating the composition of the plasma, it contains an electrode-gas distributor isolated from the housing, placed parallel to the pied electrode estalu and made with the possibility of axial movement.  2. The device according to claim 1, characterized in that, in order to improve the quality of processing, the electrode-pedestal is equipped with heating and cooling elements.

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