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LT3682485T - Vienalytės sandūros fotovoltinio elemento gamybos būdas - Google Patents

Vienalytės sandūros fotovoltinio elemento gamybos būdas

Info

Publication number
LT3682485T
LT3682485T LTEPPCT/FR2018/052230T LTFR2018052230T LT3682485T LT 3682485 T LT3682485 T LT 3682485T LT FR2018052230 T LTFR2018052230 T LT FR2018052230T LT 3682485 T LT3682485 T LT 3682485T
Authority
LT
Lithuania
Prior art keywords
photovolt
manufacture
homogeneous joint
homogeneous
joint
Prior art date
Application number
LTEPPCT/FR2018/052230T
Other languages
English (en)
Inventor
Raphaël CABAL
Original Assignee
Commissariat à l'Energie Atomique et aux Energies Alternatives
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat à l'Energie Atomique et aux Energies Alternatives filed Critical Commissariat à l'Energie Atomique et aux Energies Alternatives
Publication of LT3682485T publication Critical patent/LT3682485T/lt

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
LTEPPCT/FR2018/052230T 2017-09-15 2018-09-12 Vienalytės sandūros fotovoltinio elemento gamybos būdas LT3682485T (lt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR1758559A FR3071358B1 (fr) 2017-09-15 2017-09-15 Procede de fabrication d'une cellule photovoltaique a homojonction
PCT/FR2018/052230 WO2019053368A1 (fr) 2017-09-15 2018-09-12 Procede de fabrication d'une cellule photovoltaïque a homojonction

Publications (1)

Publication Number Publication Date
LT3682485T true LT3682485T (lt) 2021-10-11

Family

ID=60955155

Family Applications (1)

Application Number Title Priority Date Filing Date
LTEPPCT/FR2018/052230T LT3682485T (lt) 2017-09-15 2018-09-12 Vienalytės sandūros fotovoltinio elemento gamybos būdas

Country Status (6)

Country Link
EP (1) EP3682485B1 (lt)
CN (1) CN111052408B (lt)
FR (1) FR3071358B1 (lt)
LT (1) LT3682485T (lt)
TW (1) TW201917909A (lt)
WO (1) WO2019053368A1 (lt)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3114442B1 (fr) * 2020-09-21 2022-08-12 Commissariat Energie Atomique Procédé de fabrication d’une cellule photovoltaïque à contacts passivés
FR3130070B1 (fr) * 2021-12-07 2023-10-27 Commissariat Energie Atomique Procédé de fabrication d’une cellule photovoltaïque
CN117219682A (zh) * 2023-08-30 2023-12-12 天合光能股份有限公司 太阳能电池及其制作方法、光伏组件及光伏系统

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5330585A (en) * 1992-10-30 1994-07-19 Spectrolab, Inc. Gallium arsenide/aluminum gallium arsenide photocell including environmentally sealed ohmic contact grid interface and method of fabricating the cell
NL2000248C2 (nl) * 2006-09-25 2008-03-26 Ecn Energieonderzoek Ct Nederl Werkwijze voor het vervaardigen van kristallijn-silicium zonnecellen met een verbeterde oppervlaktepassivering.
US20090293955A1 (en) * 2007-11-07 2009-12-03 Qualcomm Incorporated Photovoltaics with interferometric masks
JP5197760B2 (ja) * 2008-12-02 2013-05-15 三菱電機株式会社 太陽電池セルの製造方法
US9564542B2 (en) * 2009-09-17 2017-02-07 Tetrasun, Inc. Selective transformation in functional films, and solar cell applications thereof
US20120318340A1 (en) * 2010-05-04 2012-12-20 Silevo, Inc. Back junction solar cell with tunnel oxide
US8334161B2 (en) * 2010-07-02 2012-12-18 Sunpower Corporation Method of fabricating a solar cell with a tunnel dielectric layer
DE102011075352A1 (de) * 2011-05-05 2012-11-08 Solarworld Innovations Gmbh Verfahren zum Rückseitenkontaktieren einer Silizium-Solarzelle und Silizium-Solarzelle mit einer solchen Rückseitenkontaktierung
US8658458B2 (en) * 2011-06-15 2014-02-25 Varian Semiconductor Equipment Associates, Inc. Patterned doping for polysilicon emitter solar cells
DE102011080202A1 (de) * 2011-08-01 2013-02-07 Gebr. Schmid Gmbh Vorrichtung und Verfahren zur Herstellung von dünnen Schichten
US8785233B2 (en) * 2012-12-19 2014-07-22 Sunpower Corporation Solar cell emitter region fabrication using silicon nano-particles
KR101620431B1 (ko) * 2014-01-29 2016-05-12 엘지전자 주식회사 태양 전지 및 이의 제조 방법
CN105226126A (zh) * 2015-09-06 2016-01-06 友达光电股份有限公司 一种太阳能电池结构
CN105390555A (zh) * 2015-12-25 2016-03-09 常州天合光能有限公司 全背极太阳电池结构及其制备方法

Also Published As

Publication number Publication date
EP3682485B1 (fr) 2021-07-07
WO2019053368A1 (fr) 2019-03-21
FR3071358B1 (fr) 2019-09-13
CN111052408A (zh) 2020-04-21
TW201917909A (zh) 2019-05-01
EP3682485A1 (fr) 2020-07-22
CN111052408B (zh) 2023-07-18
FR3071358A1 (fr) 2019-03-22

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