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LT2021567A - Plačiajuostę aukšto dažnio spinduliuotę generuojantis / stiprinantis įrenginys, naudojantis puslaidininkines supergardeles - Google Patents

Plačiajuostę aukšto dažnio spinduliuotę generuojantis / stiprinantis įrenginys, naudojantis puslaidininkines supergardeles

Info

Publication number
LT2021567A
LT2021567A LT2021567A LT2021567A LT2021567A LT 2021567 A LT2021567 A LT 2021567A LT 2021567 A LT2021567 A LT 2021567A LT 2021567 A LT2021567 A LT 2021567A LT 2021567 A LT2021567 A LT 2021567A
Authority
LT
Lithuania
Prior art keywords
radiation generating
frequency
frequency radiation
amplifying device
superlattice
Prior art date
Application number
LT2021567A
Other languages
English (en)
Other versions
LT7000B (lt
Inventor
Gintaras VALUŠIS
Kirill ALEKSEEV
Vladislovas ČIŽAS
Linas MINKEVIČIUS
Natalia ALEXEEVA
Dalius SELIUTA
Liudvikas SUBAČIUS
Original Assignee
Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras filed Critical Valstybinis mokslinių tyrimų institutas Fizinių ir technologijos mokslų centras
Priority to LT2021567A priority Critical patent/LT7000B/lt
Publication of LT2021567A publication Critical patent/LT2021567A/lt
Publication of LT7000B publication Critical patent/LT7000B/lt

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/015—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on semiconductor elements having potential barriers, e.g. having a PN or PIN junction
    • G02F1/017—Structures with periodic or quasi periodic potential variation, e.g. superlattices, quantum wells
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B7/00—Generation of oscillations using active element having a negative resistance between two of its electrodes
    • H03B7/12—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance
    • H03B7/14—Generation of oscillations using active element having a negative resistance between two of its electrodes with frequency-determining element comprising distributed inductance and capacitance active element being semiconductor device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
    • H10D62/815—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation of structures having periodic or quasi-periodic potential variation, e.g. superlattices or multiple quantum wells [MQW]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/146—Superlattices; Multiple quantum well structures

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Šis išradimas priklauso kietakūnių aukšto dažnio spinduliuotę generuojančių/stiprinančių prietaisų projektavimo bei kūrimo sričiai. Pasiūlytame išradime panaudojamas kvantinės optoelektronikos Esaki-Tsu netiesiškumo supergardelėje principas bei puslaidininkinės kvantinės struktūros ir atitinkamo dizaino injektuojantys kontaktai leidžia sukurti kompaktišką plačiajuostę aukšto dažnio spinduliuotę generuojantį/stiprinantį įrenginį, kuris gali būti patalpintas ant puslaidininkinio lusto (on-chip). Jis yra plačiajuostis ir gali veikti nuo kelių GHz iki THz. Aukštesnio dažnio ribojimas yra nusakomas ribinio Blocho dažnio, kuris priklauso nuo supergardelės dizaino, t. y. nuo minijuostos pločio. Išradimas suteikia galimybę praktinių GHz-THz dažnių ruožo taikymų realizacijoms realios veikos, pavyzdžiui kambario temperatūros aplinkoje su praktiniams taikymams pakankamu stiprinimo lygiu.
LT2021567A 2021-10-27 2021-10-27 Plačiajuostę aukšto dažnio spinduliuotę generuojantis / stiprinantis įrenginys, naudojantis puslaidininkines supergardeles LT7000B (lt)

Priority Applications (1)

Application Number Priority Date Filing Date Title
LT2021567A LT7000B (lt) 2021-10-27 2021-10-27 Plačiajuostę aukšto dažnio spinduliuotę generuojantis / stiprinantis įrenginys, naudojantis puslaidininkines supergardeles

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
LT2021567A LT7000B (lt) 2021-10-27 2021-10-27 Plačiajuostę aukšto dažnio spinduliuotę generuojantis / stiprinantis įrenginys, naudojantis puslaidininkines supergardeles

Publications (2)

Publication Number Publication Date
LT2021567A true LT2021567A (lt) 2023-05-10
LT7000B LT7000B (lt) 2023-06-12

Family

ID=80121653

Family Applications (1)

Application Number Title Priority Date Filing Date
LT2021567A LT7000B (lt) 2021-10-27 2021-10-27 Plačiajuostę aukšto dažnio spinduliuotę generuojantis / stiprinantis įrenginys, naudojantis puslaidininkines supergardeles

Country Status (1)

Country Link
LT (1) LT7000B (lt)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0759640B1 (en) * 1995-08-17 2003-06-11 Paul-Drude-Institut für Festkörperelektronik Semiconductor superlattice oscillator and methods of manufacturing and operating the same
US7170085B2 (en) * 2003-08-18 2007-01-30 Stevens Institute Of Technology Frequency selective terahertz radiation detector

Also Published As

Publication number Publication date
LT7000B (lt) 2023-06-12

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Legal Events

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BB1A Patent application published

Effective date: 20230510

FG9A Patent granted

Effective date: 20230612