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KR950007601A - Close Image Sensor - Google Patents

Close Image Sensor Download PDF

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Publication number
KR950007601A
KR950007601A KR1019930017302A KR930017302A KR950007601A KR 950007601 A KR950007601 A KR 950007601A KR 1019930017302 A KR1019930017302 A KR 1019930017302A KR 930017302 A KR930017302 A KR 930017302A KR 950007601 A KR950007601 A KR 950007601A
Authority
KR
South Korea
Prior art keywords
photoelectric conversion
thin film
conversion layer
film transistor
film transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
KR1019930017302A
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Korean (ko)
Inventor
배형균
Original Assignee
이헌조
주식회사 금성사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이헌조, 주식회사 금성사 filed Critical 이헌조
Priority to KR1019930017302A priority Critical patent/KR950007601A/en
Publication of KR950007601A publication Critical patent/KR950007601A/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery

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  • Facsimile Heads (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

본 발명은 밀착형 이미지 센서에 관한 것으로, 플레너 구조의 전극으로 구성된 m개의 광전변환소자를 한 단위로 한 n개의 블록으로 이루어진 제 1광전 변환층(11)과, 상기 제 1광전변환층(11)과 동일하게 구성된 제 2광전변환층(21)과, m개의 박막트랜지스터를 한 단위로 하여 n개의 블록으로 상기 제 1 및 제 2광전변환층(11, 21)을 차례로 스위칭하는 1열의 박막트랜지스터부(30)와 상기 제 1 및 제 2광전변환층(11, 21)에 광전변환소자 구동펄스를 인가하는 광전변환소자 구동회로(60)와 상기 박막트랜지스터 m개를 한 단위로 한 n개의 게이트 어드레스 라인(38)에 게이트 구동펄스를 인가하는 게이트 구동회로(70)와, 상기 제 1 및 제 2광전변환층(11, 21)에서 축적된 캐리어를 상기 박막트랜지스터와 데이터 독출라인(41)을 통해 순차적으로 처리하는 데이터 독출부(80)를 구비하여 제 1열의 아날로그 스위치인 박막 트랜지스터로 2열의 광전변환소자열을 구동함으로써 스캔 속도를 향상시키고 독출회로를 1개만 사용함으로써 제조비용을 절감시키는 효과가 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a close-type image sensor, comprising: a first photoelectric conversion layer (11) composed of n blocks including m photoelectric conversion elements composed of a planar structure electrode, and the first photoelectric conversion layer (11) ) And a single thin film transistor for sequentially switching the first and second photoelectric conversion layers 11 and 21 with n blocks by using m thin film transistors as a unit and m thin film transistors as a unit. A photoelectric conversion element driving circuit 60 for applying photoelectric conversion element driving pulses to the section 30, the first and second photoelectric conversion layers 11 and 21, and n gates each of m thin film transistors. A gate driving circuit 70 applying a gate driving pulse to an address line 38 and carriers accumulated in the first and second photoelectric conversion layers 11 and 21 may be formed using the thin film transistor and the data read line 41. Through the data reader 80 to process sequentially through In addition, by driving two rows of photoelectric conversion element columns with a thin film transistor which is an analog switch of the first row, it is possible to improve the scanning speed and to reduce the manufacturing cost by using only one read circuit.

Description

밀착형 이미지 센서Close Image Sensor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 5도는 본 발명에 의한 밀착형 이미지 센서의 레이아웃도,5 is a layout diagram of a close-type image sensor according to the present invention,

제 6도는 BB'선을 기준으로 자른 제 5도의 단면도,6 is a cross-sectional view of FIG. 5 taken along line BB ',

제 7도는 제 5도의 등가회로도,7 is an equivalent circuit diagram of FIG.

제 8도는 제 7도의 파형도.8 is a waveform diagram of FIG.

Claims (3)

플레너 구조의 전극으로 구성된 m개의 광전변환소자를 한 단위로 한 n개의 블록으로 이루어진 제 1광전변환층(11)과, 상기 제 1광전변환층(11)과 동일하게 구성된 제 2광전변환층(21)과, m개의 박막트랜지스터를 한 단위로 하여 n개의 블록으로 상기 제 1 및 제 2광전변환층(11, 21)을 차례로 스위칭하는 1열의 박막트랜지스터부(30)와, 상기 제 1 및 제 2광전변환층(11, 21)에 광전변환소자 구동펄스를 인가하는 광전변환소자 구동회로(60)와, 상기 박막트랜지스터 m개를 한 단위로 한 n개의 게이트 어드레스 라인(38)에 게이트 구동펄스를 인가하는 게이트 구동회로(70)와, 상기 제 1 및 제 2광전변환층(11, 21)에서 축적된 캐리어를 상기 박막트랜지스터와 데이터 독출라인(41)을 통해 순차적으로 처리하는 데이터 독출부(80)를 구비하여 이루어지는 것을 특징으로 하는 밀착형 이미지 센서.A first photoelectric conversion layer 11 composed of n blocks each having m photoelectric conversion elements formed of electrodes having a planar structure, and a second photoelectric conversion layer having the same structure as the first photoelectric conversion layer 11; 21) and a thin film transistor section 30 of one row for sequentially switching the first and second photoelectric conversion layers 11 and 21 with n blocks using m thin film transistors as a unit, and the first and second The gate driving pulses are applied to the photoelectric conversion element driving circuit 60 for applying the photoelectric conversion element driving pulses to the two photoelectric conversion layers 11 and 21 and to the n gate address lines 38 of m thin film transistors as a unit. A data reading unit for sequentially processing the gate driving circuit 70 for applying N and the carriers accumulated in the first and second photoelectric conversion layers 11 and 21 through the thin film transistor and the data read line 41. 80) characterized by comprising a mill Type image sensor. 제 1항에 있어서, 상기 제 1광전변환층(11)의 k번째 전극과, 이 전극과 동일방향의 제 2광전변환층(21)의 k번째 전극이 서로 접속함을 특징으로 하는 밀착형 이미지 센서.The close-up image according to claim 1, wherein the k-th electrode of the first photoelectric conversion layer 11 and the k-th electrode of the second photoelectric conversion layer 21 in the same direction as the electrode are connected to each other. sensor. 제 1항에 있어서, 상기 제 1광전변환층(11)과 제 2광전변환층(21)은 상기 광전변환소자 구동회로(60)로부터 상호 반전된 신호가 인가됨을 특징으로 하는 밀착형 이미지 센서.The close-type image sensor according to claim 1, wherein the first photoelectric conversion layer (11) and the second photoelectric conversion layer (21) are inverted from each other by the photoelectric conversion element driving circuit (60). ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019930017302A 1993-08-31 1993-08-31 Close Image Sensor Withdrawn KR950007601A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019930017302A KR950007601A (en) 1993-08-31 1993-08-31 Close Image Sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930017302A KR950007601A (en) 1993-08-31 1993-08-31 Close Image Sensor

Publications (1)

Publication Number Publication Date
KR950007601A true KR950007601A (en) 1995-03-21

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Application Number Title Priority Date Filing Date
KR1019930017302A Withdrawn KR950007601A (en) 1993-08-31 1993-08-31 Close Image Sensor

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100965176B1 (en) * 2003-04-07 2010-06-24 삼성전자주식회사 Array panel for digital x-ray detector and manufacturing method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100965176B1 (en) * 2003-04-07 2010-06-24 삼성전자주식회사 Array panel for digital x-ray detector and manufacturing method thereof

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Legal Events

Date Code Title Description
PA0109 Patent application

Patent event code: PA01091R01D

Comment text: Patent Application

Patent event date: 19930831

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid