KR930008227Y1 - Current cell circuit - Google Patents
Current cell circuit Download PDFInfo
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- KR930008227Y1 KR930008227Y1 KR2019910011211U KR910011211U KR930008227Y1 KR 930008227 Y1 KR930008227 Y1 KR 930008227Y1 KR 2019910011211 U KR2019910011211 U KR 2019910011211U KR 910011211 U KR910011211 U KR 910011211U KR 930008227 Y1 KR930008227 Y1 KR 930008227Y1
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- 239000011159 matrix material Substances 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
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- 239000003990 capacitor Substances 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03M—CODING; DECODING; CODE CONVERSION IN GENERAL
- H03M1/00—Analogue/digital conversion; Digital/analogue conversion
- H03M1/66—Digital/analogue converters
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Abstract
내용 없음.No content.
Description
제 1 도는 전류셀 매트릭스형 디지탈/아날로그 변환 블록도.1 is a block diagram of a current cell matrix type digital / analog conversion.
제 2 도 및 제 3 도는 종래의 전류셀 회로도.2 and 3 are conventional current cell circuit diagrams.
제 4 도는 본 고안의 전류셀 회로도.4 is a circuit diagram of a current cell of the present invention.
제 5 도는 본 고안의 다른 실시 예시도.5 is another embodiment of the present invention.
제 6 도는 코일과 접지중간에 형성되는 LC필터의 회로도.6 is a circuit diagram of an LC filter formed between a coil and ground.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : X디코더 2 : Y디코더1: X decoder 2: Y decoder
3 : 전류셀부 10 : 지연부3: current cell unit 10: delay unit
NM11-NM14: 엔모스 R11: 저항NM 11 -NM 14 : NMOS R 11 : Resistance
L11: 코일L 11 : Coil
본 고안은 고속 디지탈/아날로그 변환 수단중 시모스 셀 매트릭스 시스템의 전류 셀 회로에 관한 것으로 특히 글리치를 제거하는데 적당하도록 한 전류 셀 회로에 관한 것이다.The present invention relates to a current cell circuit of a CMOS cell matrix system among high speed digital / analog conversion means, and more particularly to a current cell circuit adapted to eliminate glitches.
제 1 도는 전류 셀 매트릭스형 디지탈/아날로그 변환기의 블록도를 보인 것으로, 이는 온도계 부호화 방식을 채택하여, 입력 디지탈 신호의 크기에 해당하는 만큼의 전류 셀 갯수를 온시켜 출력전류를 생성하는 방식을 채택한 것이며, 칩 사이즈를 줄이고 직선성 오차를 줄이기 위해 N비트의 디지탈 입력을 X,Y디코더(1,2)를 통해 둘로 나누어 독립적으로 디코딩을 행하고, 전류셀부(3)에는 앤드-오아-낱(AND-OR-NOT)의 논리구성으로 이를 가산한다.1 shows a block diagram of a current cell matrix type digital / analog converter, which adopts a thermometer coding scheme and generates an output current by turning on the number of current cells corresponding to the size of an input digital signal. In order to reduce the chip size and reduce the linearity error, the N-bit digital input is divided into two through the X and Y decoders (1, 2) and independently decoded. -OR-NOT) to add this to the logical configuration.
한편, 제 2 도 및 제 3 도는 종래의 전류 셀 회로를 보인 것으로, 이의 작용을 설명하면 다음과 같다.Meanwhile, FIGS. 2 and 3 show a conventional current cell circuit, and the operation thereof will be described below.
X, Y디코더(1),(2)의 출력신호(X),(Y1,Y2)는 전류셀부(3)에서 전류셀회로(3A)내의 엔모스(NM1), (NM2), (NM3)의 게이트 입력신호로 입력되는데, 그 입력신호(X),(Y1)가 동시에 "하이"이거나 입력신호(Y2)가 "하이"이면, 엔모스(NM1,NM2)가 온되거나 엔모스(NM3)가 온되므로 이때, 그 엔모스(NM3)와 차동결합된 엔모스(NM4)가 오프되고, 이에 따라 그 엔모스(NM4)를 통해 흐르는 출력전류(IOUT)가 0이되어 출력전압(Vout)은 "하이"가 된다.The output signals X, Y 1 and Y 2 of the X and Y decoders 1 and 2 are NMOS 1 and NM 2 in the current cell circuit 3A in the current cell section 3. NM 3 is inputted as a gate input signal, and when the input signals X and Y 1 are simultaneously "high" or the input signal Y 2 is "high", the NMOS 1 NM 2 ) is turned on or NMOS (NM 3) is turned on, so this time, the NMOS (NM 3) and a differential coupled NMOS (NM 4) is off, so that flow through the NMOS (NM 4) output current (I OUT ) becomes 0 and the output voltage Vout becomes "high".
그러나 상기 입력신호(X),(Y1)중에서 하나 이상이 "로우"이고, 입력신호(Y2)가 "로우"이면, 엔모스(NM1, NM2)를 통해 전류가 흐르지 않고 엔모스(NM3)를 통해서도 전류가 흐르지 않으므로 이때, 그 엔모스(NM3)와 차동동작하는 엔모스(NM4)가 온되고, 이에 따라 그 엔모스(NM4)을 통해 출력전류(IOUT)가 흘러 출력전압(Vout)은 "로우"가 된다.However, when at least one of the input signals X and Y 1 is "low" and the input signal Y 2 is "low", no current flows through the NMOSs NM 1 and NM 2 . (NM 3) the current does not flow through this time, the NMOS (NM 3) and a differential operation yen, and the moss (NM 4) on which, and thus the NMOS (NM 4) the output current through along (I OUT) Flows to the output voltage Vout.
즉, 엔모스(NM1-NM3)의 게이트에 공급되는 입력신호(X,Y1,Y2)에 대한 출력전류(IOUT)의 논리식가 되므로 입력신호(X,Y1,Y2)에 대한 출력전압(VOUT)의 논리식 VOUT= X · Y1+ Y2가 된다.That is, the logical expression of the output current (I OUT ) with respect to the input signals (X, Y 1 , Y 2 ) supplied to the gates of the NMOS 1 -NM 3 . Therefore, the logical expression V OUT = X · Y 1 + Y 2 of the output voltage (V OUT ) with respect to the input signals (X, Y 1 , Y 2 ).
한편, 제 3 도에 있어서, 상기 X, Y 디코더(1),(2)로부터 공급되는 입력신호(X),(Y1)가 앤드게이트(AD1)에서 앤드조합된 다음 다시 오아게이트(OR1)에서 Y디코더(2)로부터 입력되는 신호(Y2)와 오아연산되어 엔모스(NM6)의 게이트에 공급됨과 아울러, 인버터(I1)를 통해서는 상기 엔모스(NM6)와 차동결합된 엔모스(NM5)의 게이트에 공급되므로 입력신호(X,Y1,Y2)에 대한 출력전류(IOUT)의 관계식되고, 입력신호(X,Y1,Y2)에 대한 출력전압(VOUT)의 관계식 VOUT= X · Y1+ Y2가 된다.Meanwhile, in FIG. 3, the input signals X and Y 1 supplied from the X and Y decoders 1 and 2 are AND-combined in the AND gate AD 1 , and then the OR gate OR again. 1) as soon supplied to the gate of the signal (Y 2) with the Iowa operation NMOS (NM 6) inputted from the Y decoder (2) in addition, the inverter (I is the NMOS (NM 6) with a differential via a 1) Relation of output current (I OUT ) with respect to input signal (X, Y 1 , Y 2 ) as it is supplied to gate of coupled NMOS 5 Then, the relation V OUT = X · Y 1 + Y 2 becomes a relational expression of the output voltage V OUT with respect to the input signals X, Y 1 , Y 2 .
그러나 이와같은 종래의 전류 셀 회로에 있어서, 전자는 입력신호의 과도상태시 출력단자에 큰 클리치가 나타나고, 후자는 단위 전류 셀 회로의 구성 소자수가 많아서 칩의 사이즈가 확대되며, 이에따른 직선성 오차가 증가되는 결점이 있었다.However, in the conventional current cell circuit, the former has a large cleat at the output terminal in the transient state of the input signal, and the latter has a large number of constituent elements of the unit current cell circuit, thereby increasing the size of the chip, resulting in linearity error. There was a drawback to increase.
본 고안은 이와같은 종래의 결점을 해결하기 위하여 전류 셀의 크기와 글리치를 동시에 저감할 수 있게 창안한 것으로, 이를 첨부한 도면에 의하여 상세히 설명한다.The present invention was devised to reduce the size and glitches of a current cell at the same time to solve such a conventional drawback, which will be described in detail with reference to the accompanying drawings.
제 4 도는 본 고안의 전류셀 회로도로서 이에 도시한 바와 같이, 전원단자(VDD)에 서로 병렬접속되어 X디코더(1)로부터 입력되는 신호(X)에 의해 구동되는 엔모스(NM11) 및 Y 디코더(2)로부터 입력되는 신호(Y2)에 의해 구동되는 엔모스(NM12)와, 상기 입력신호(X),(Y2)가 상기 엔모스(NM11),(NM12)의 게이트에 각기 공급될 때까지 Y디코더(2)의 출력신호(Y1)를 지연시키는 지연부(10)와, 드레인을 통해 상기 엔모스(NM11),(NM12)의 출력신호를 공급받고, 게이트를 통해 상기 지연부(10)의 출력신호를 공급받아 그에 따른 구동출력을 전류원(ILSB)측으로 출력하는 엔모스(NM13)와, 소정의 전압(VBias)에 의해 바이어스되고, 상기 엔모스(NM13)와 차동동작 하면에 그에 따른 전압(VOUT)을 출력하는 엔모스(NM14)로 구성한 것으로, 이와 같이 구성된 본 고안의 작용 및 효과를 제 5 도 및 제 6 도를 참조하여 상세히 설명하면 다음과 같다.4 is a current cell circuit diagram of the present invention, as shown here, an NMOS 11 and Y driven by a signal X input from the X decoder 1 connected in parallel with each other to a power supply terminal V DD . The NMOS 12 driven by the signal Y 2 input from the decoder 2, and the input signals X and Y 2 are supplied to the gates of the NMOS 11 and NM12, respectively. A delay unit 10 for delaying the output signal Y 1 of the Y decoder 2 and an output signal of the NMOS 11 and NM12 through a drain, and the delay through a gate. NMOS13, which receives the output signal of the unit 10 and outputs the driving output according to the current source I LSB , is biased by a predetermined voltage V Bias and is differential from the NMOS13. It is composed of the NMOS (NM14) for outputting the voltage (V OUT ) according to the lower surface, the operation and effects of the present invention configured as described above And it will be described in detail with reference to Figure 6 as follows.
본 회로의 논리식로 표현되는데, 전류 셀 이전단에 있는 디코더(2)의 특성상 입력신호(Y1)가 "로우"상태에서 입력신호(Y2)가 "하이"로 출력되지 않으므로 논리식가 되어 결국, 기존의 논리식가 같게 된다.Logic formula of this circuit Since the input signal (Y 1 ) is "low" and the input signal (Y 2 ) is not output as "high" due to the characteristic of the decoder (2) in the previous stage of the current cell, In the end, the existing logic becomes the same.
즉, X,Y디코더(1),(2)의 출력신호(X),(Y1,Y2)는 전류셀부(3)에서 전류셀회로(3A)내의 엔모스(NM11),(NM12),(NM13)의 게이트 입력신호로 입력되는데, 그 입력신호(X),(Y1)가 동시에 "하이"이거나 입력신호(Y2)가 "하이"이면 (이때, 입력신호(Y1)도 "하이"), 엔모스(NM11,NM13)가 온되거나 엔모스(NM12,NM13)가 온되므로 이때, 엔모스(NM11),(NM13) 또는 엔모스(NM12),(NM13)를 통해 전류원(ILSB)측으로 전류가 흘러 상기 엔모스(NM13)와 차동결합된 엔모스(NM14)가 오프되고, 이에 따라 그 엔모스(NM14)를 통해 출력전류(IOUT)가 흐르지 않아 저항(R11)과 그 엔모스(NM14)의 드레인 접속점에서 출력되는 전압(Vout)은 "하이"된다.That is, the output signals X and Y 1 and Y 2 of the X and Y decoders 1 and 2 are NMOS 11 and NM in the current cell circuit 3A in the current cell unit 3. 12 ), which is input to the gate input signal of (NM 13 ), when the input signals (X) and (Y 1 ) are simultaneously "high" or the input signal (Y 2 ) is "high" (in this case, the input signal (Y) 1 ) is also "high"), NMOS 11 , NM 13 is turned on or NMOS 12 , NM 13 is turned on, so at this time, NMOS 11 , (NM 13 ) or NMOS (NM) 12), (NM 13) the current flows toward the current source (I LSB) through which the NMOS (NM 13) and a differential coupled NMOS (NM 14) is turned off, via the NMOS (NM 14) accordingly Since the output current I OUT does not flow, the voltage Vout output at the drain connection point of the resistor R11 and its NMOS 14 becomes "high".
그러나 상기 입력신호(X),(Y1)중에서 하나 이상이 "로우"이고, 입력신호(Y2)가 "로우"이고, 입력신호(Y2)가 "로우"이면(이때, 입력신호(Y1)도 "로우"), 엔모스(NM11,NM13)를 통해 전류가 흐르지 않고(NM12,NM13)를 통해서도 전류가 흐르지 않으므로 이때, 엔모스(NM14)가 온되고, 이에 따라 그 엔모(NM14)을 통해 출력전류(IOUT)가 흘러 출력전압(Vout)은 "로우"가 된다.However, if at least one of the input signals X and Y 1 is " low ", the input signal Y 2 is " low ", and the input signal Y 2 is " low " Y 1 ) is also " low ", since no current flows through the NMOS 11 and NM 13 and no current flows through the NM 12 and NM 13 , at this time, the NMOS 14 is turned on. Accordingly, the output current I OUT flows through the enmo NM 14 , and the output voltage Vout becomes "low".
여기서, 상기 입력신호(X,Y2)의 스위칭에 의하여 아날로그 출력에 발생되는 글리치는 회로의 구성상 상기 엔모스(NM13)를 통과하므로 출력단에서 그 영향을 상당히 줄일 수 있게 된다.Here, the glitch generated in the analog output by the switching of the input signal (X, Y 2 ) passes through the NMOS ( 13 ) in the configuration of the circuit can significantly reduce the effect at the output terminal.
그리고 상기 입력신호(Y1)의 입력단에 지연부(10)를 두어 입력신호(X),(Y2)가 결정된 후, 입력신호(Y1)가 스위칭되게 함으로써 입력신호(X,Y2)의 영향을 줄일 수 있게 된다.And after a predetermined delay unit 10 to couple the input signal (X), (Y 2) to the input terminal, the input signal (Y 1) the input signal (X, Y 2) by causing the switching of the input signal (Y 1) Can reduce the impact of.
또한, 상기의 설명에서와 같이 입력신호(X),(Y1,Y2)에 따라 엔모스 엔모스(NM13)와 (NM14)가 차동적으로 동작하도록 하기 위해 그 엔모스(NM14)의 게이트에 소정의 바이어스전압(VBias)을 공급하게 된다.In addition, as described above, in order for the NMOS NMOS 13 and NM 14 to operate differentially according to the input signals X and Y 1 and Y 2 , the NMOS 14 A predetermined bias voltage (V Bias ) is supplied to the gate of.
한편, 제 5 도는 글리치 특성을 개선하기 위한 본 고안의 다른 실시 예시도로서 이의 작용을 설명하면 다음과 같다.On the other hand, Figure 5 is another embodiment of the present invention for improving the glitch characteristics when explaining the operation thereof as follows.
엔모(NM11),(NM12)를 병렬 연결한 후, 다시 엔모스(NM13)와 직렬 연결함으로써 엔모스(NM11),(NM12)로 유입되는 글리치가 출력노드에 영향을 주는 것이 그 엔모스(NM13)에 의해 1차적으로 방지된다. 그리고, 상기 엔모스(NM13)로 유입되는 글리치는 그 엔모스(NM13)의 소오스에 연결된 LC필터에 의하여 2차적으로 제거되어 출력노드의 전류, 전압 과도현상의 발생이 억제된다.By connecting NMO 11 and NM 12 in parallel and then connecting them in series with NMOS 13 , the glitch flowing into NMOS 11 and NM 12 affects the output node. It is prevented primarily by the NMOS 13 . The glitch flowing into the NMOS 13 is secondarily removed by an LC filter connected to the source of the NMOS 13, thereby suppressing the occurrence of current and voltage transients at the output node.
상기 LC필터란 "ㄷ"자 형상과 "역ㄷ"자 형상으로 연속 반복되는 제1금속층으로 형성된 코일(L11)과, 판넬구조로 형성되어 상기 제1금속층과 소정간격을 두고 결합되는 제2금속층에 의해 형성되는 접지콘덴서(C11),(C12)로 이루어진 것을 말한다.The LC filter is a coil L11 formed of a first metal layer that is repeated in a "c" shape and a "reverse c" shape, and a second metal layer formed of a panel structure and coupled to the first metal layer at a predetermined interval. It is made of a ground capacitor (C11), (C12) formed by.
비디오신호 처리용 D/D변환기의 데이타 처리속도는 50MHZ 이상이므로 이에 따른 클럭주파수가 50MHZ 이상이 되고, 이때 발생되는 글리치 주파수는 이것의 10배 이상이 되는데, 상기 LC 필터의 코일용량이 약 10-1(nH) 정도이므로 글리치제거용 필터에 충분히 적용할 수 있다.Since the data processing speed of the video signal processing D / D converter is 50 MHZ or more, the clock frequency thereof becomes 50 MHZ or more, and the glitch frequency generated is 10 times or more of this, and the coil capacity of the LC filter is about 10- . Since it is about 1 (nH), it can be sufficiently applied to a glitch removing filter.
이상에서 상세히 설명한 바와 같이 본 고안은 구성을 간단히하여 제품의 소형화에 기여하고, 글리치를 줄여 사용자에게 신뢰감을 줄 수 있는 이점이 있다.As described in detail above, the present invention has the advantage of contributing to the miniaturization of the product by simplifying the configuration and reducing the glitch to give the user confidence.
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019910011211U KR930008227Y1 (en) | 1991-05-30 | 1991-07-18 | Current cell circuit |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR910007871 | 1991-05-30 | ||
| KR91-7871 | 1991-05-30 | ||
| KR2019910011211U KR930008227Y1 (en) | 1991-05-30 | 1991-07-18 | Current cell circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR920022311U KR920022311U (en) | 1992-12-19 |
| KR930008227Y1 true KR930008227Y1 (en) | 1993-12-13 |
Family
ID=70769797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019910011211U Expired - Lifetime KR930008227Y1 (en) | 1991-05-30 | 1991-07-18 | Current cell circuit |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR930008227Y1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100945873B1 (en) * | 2007-12-27 | 2010-03-05 | 주식회사 동부하이텍 | Current Cell Circuit in Digital-to-Analog Converter |
-
1991
- 1991-07-18 KR KR2019910011211U patent/KR930008227Y1/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100945873B1 (en) * | 2007-12-27 | 2010-03-05 | 주식회사 동부하이텍 | Current Cell Circuit in Digital-to-Analog Converter |
Also Published As
| Publication number | Publication date |
|---|---|
| KR920022311U (en) | 1992-12-19 |
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