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KR920008839A - SiNx/a-Si 계면 형성방법 - Google Patents

SiNx/a-Si 계면 형성방법 Download PDF

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Publication number
KR920008839A
KR920008839A KR1019900016602A KR900016602A KR920008839A KR 920008839 A KR920008839 A KR 920008839A KR 1019900016602 A KR1019900016602 A KR 1019900016602A KR 900016602 A KR900016602 A KR 900016602A KR 920008839 A KR920008839 A KR 920008839A
Authority
KR
South Korea
Prior art keywords
sinx
film
formation method
forming
interface formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
KR1019900016602A
Other languages
English (en)
Other versions
KR930009547B1 (ko
Inventor
윤기천
Original Assignee
김정배
삼성전관 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김정배, 삼성전관 주식회사 filed Critical 김정배
Priority to KR1019900016602A priority Critical patent/KR930009547B1/ko
Publication of KR920008839A publication Critical patent/KR920008839A/ko
Application granted granted Critical
Publication of KR930009547B1 publication Critical patent/KR930009547B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H10P14/3411—
    • H10P14/6532—
    • H10P14/69433—

Landscapes

  • Formation Of Insulating Films (AREA)
  • Thin Film Transistor (AREA)

Abstract

내용 없음.

Description

SiNx/a-Si 계면 형성 방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 1 도는 본 발명의 방법을 플라즈마 화학기상증착 장치에서 실행하는 것을 보이는 설명도.
제 2 도는 통상의 박막트랜지스터의 개략 단면도이다.

Claims (2)

  1. SiNx막 위에 a-Si막을 형성하는 데 있어서, SiNx막을 형성한 뒤, 플라즈마화한 NH3가스 분위기에서 SiNx막의 표면을 먼저 활성화 시킨 다음에 형성하는 것을 특징으로 하는 SiNx/a-Si 계면 형성방법.
  2. 제 1 항에 있어서, 상기 NH3가스의 플라즈마화를 SiNx막 형성 후 a-Si막 향상을 위해 온도를 낮추는 동안 행하는 것을 특징으로 하는 SiNx/a-Si 계면 형성방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019900016602A 1990-10-16 1990-10-16 SiNx/a-Si 계면 형성 방법 Expired - Fee Related KR930009547B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019900016602A KR930009547B1 (ko) 1990-10-16 1990-10-16 SiNx/a-Si 계면 형성 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019900016602A KR930009547B1 (ko) 1990-10-16 1990-10-16 SiNx/a-Si 계면 형성 방법

Publications (2)

Publication Number Publication Date
KR920008839A true KR920008839A (ko) 1992-05-28
KR930009547B1 KR930009547B1 (ko) 1993-10-06

Family

ID=19304825

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019900016602A Expired - Fee Related KR930009547B1 (ko) 1990-10-16 1990-10-16 SiNx/a-Si 계면 형성 방법

Country Status (1)

Country Link
KR (1) KR930009547B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170001210U (ko) 2015-09-25 2017-04-04 박성진 다용도 물품 정리대

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20170001210U (ko) 2015-09-25 2017-04-04 박성진 다용도 물품 정리대

Also Published As

Publication number Publication date
KR930009547B1 (ko) 1993-10-06

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