KR920006431Y1 - Architecture of lessoning inductance - Google Patents
Architecture of lessoning inductance Download PDFInfo
- Publication number
- KR920006431Y1 KR920006431Y1 KR2019900013420U KR900013420U KR920006431Y1 KR 920006431 Y1 KR920006431 Y1 KR 920006431Y1 KR 2019900013420 U KR2019900013420 U KR 2019900013420U KR 900013420 U KR900013420 U KR 900013420U KR 920006431 Y1 KR920006431 Y1 KR 920006431Y1
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- South Korea
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- module
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- electrolytic capacitor
- capacitor
- transistor
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of AC power input into DC power output; Conversion of DC power input into AC power output
- H02M7/42—Conversion of DC power input into AC power output without possibility of reversal
- H02M7/44—Conversion of DC power input into AC power output without possibility of reversal by static converters
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
- Power Conversion In General (AREA)
Abstract
내용 없음.No content.
Description
제1도는 본 고안의 분해사시도.1 is an exploded perspective view of the present invention.
제2도는 본 고안의 평면도.2 is a plan view of the present invention.
제3도는 스너버부위의 다른실시 평면도.3 is another embodiment plan view of the snubber portion.
제4도는 트랜지스터모듈의 전기회로도.4 is an electric circuit diagram of a transistor module.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
1 : 전해콘덴서 3 : 콘덴서플레이트1: electrolytic capacitor 3: capacitor plate
4 : 설치구멍 5, 5' : 트랜지스터모듈4: mounting hole 5, 5 ': transistor module
7 : 방열판 8 : 모듈플레이트7: heat sink 8: module plate
9, 9' : 스너버 10 : 케이블9, 9 ': Snubber 10: Cable
11 : 양극부스바 16, 16' : 모듈부스바11: anode booth bar 16, 16 ': module booth bar
본 고안은 주로 파워트랜지스터를 채용한 직류입력 교류 변환펄스폭변조 또는 PAM 변조인버어트 주회로에서 스너버가 붙는 트랜지스터모듈과 전해콘덴서간에 형성하는 배선인덕턴스로 인하여 유기되는 써지전압을 줄이기 위한 구조에 관한 것이다.The present invention is mainly designed to reduce surge voltage induced due to wiring inductance formed between transistor module with snubber and electrolytic capacitor in DC input AC conversion pulse width modulation or PAM modulation inverter main circuit using power transistor. It is about.
트랜지스터모듈는 제4에서 보는 바와 같이 전해콘덴서(1)와 접속되어 있는바 그 배선 L이 길면 길수록 배선 인턱턴스가 커지기 때문에 배선인턱턴스로 인하여 발생된 써지전압은 커지게 되어 파워트랜지스터를 파괴시킬 수 있으므로 일반적으로 스너버회로(S)를 채용하여 써지전압을 감쇄시키고 있다.As shown in the fourth, the transistor module is connected to the electrolytic capacitor 1, and the longer the wiring L is, the larger the wiring inductance is, so the surge voltage generated by the wiring inductance is increased. Since the power transistor becomes large and can destroy the power transistor, a snubber circuit S is generally employed to reduce the surge voltage.
그러나 스너버의 용량이 커지면 그에 따라 발생되는 손실도 커지므로 스너버회로(S)의 채용에도 한계가 있는것이다.However, as the capacity of the snubber increases, the loss generated accordingly increases, so there is a limit to the adoption of the snubber circuit (S).
이와같은 배선인턱턴스에 의하여 발생되는 써지전압 Vp를 줄이기 위한 방편으로는 배선 L을 최소로 하는 구조를 취하는 것이 바람직한 것이다.As a means for reducing the surge voltage Vp generated by such wiring inductance, it is desirable to take a structure in which the wiring L is minimized.
종래, 일반적으로는 전해콘덴서로 일렬로 세워 부스바로 병렬 접속하고 이 부스바와 트랜지스터모듈을 연결하는 부스바와의 사이에 상기 배선 L에 해당하는 부스바 또는 케이블를 연결하는바 종래의 구조로서는 그 연결케이블 길이가 길어 배선인덕턴스가 증가함은 물론 전해콘덴서의 취부반침판에 의하여 콘덴서사이의 대류방향으로의 공간이 주어지지 않아 적합한 방열효과를 기할수 없는 등의 문제가 있었다.Conventionally, the busbar or cable corresponding to the wiring L is connected between the busbar and the busbar connecting the busbar and the transistor module in a line with an electrolytic capacitor. As a result, the wiring inductance was increased and the space in the convective direction between the capacitors was not given due to the mounting plate of the electrolytic capacitor.
또 하나의 경우로서는, 전해콘덴서가 소량인 경우 트랜지스터모듈 전방에 위치하는 모듈부스바 하단에 전해콘덴서를 바로 접속하는 경우가 있으나 이는 용량이 큰 경우에 적용할수 없고 구조적으로 트랜지스터모듈의 교체시보수가 어렵다는 문제가 있었다.In another case, when a small amount of electrolytic capacitor is used, the electrolytic capacitor may be directly connected to the bottom of the module booth bar located in front of the transistor module. However, this is not applicable when the capacity is large and structural maintenance of the transistor module is not possible. There was a problem of difficulty.
본 고안은 종래의 이와같은 문제를 해결하기 위하여 안출된 것으로서 트랜지스터모듈과 전해콘덴서간의 배선길이를 짧게하여 배선인덕턴스를 줄이고 트랜지스터모듈의 고체보수를 용이케하며 전해콘덴서간의 공기의 내류공간을 확보하여 방열효과를 기하고 구조의 단순화로 작업성을 향상시키는 데 그 목적이 있는 것이다.The present invention was devised to solve such a problem of the prior art, and the wiring length between the transistor module and the electrolytic capacitor is shortened to reduce the wiring inductance, facilitate the solid repair of the transistor module, and secure the airflow space between the electrolytic capacitors. The purpose is to improve workability by effect and simplification of structure.
이와같은 본 고안은 첨부된 도면에 의거하여 구체적으로 설명하면 다음과 같다.The present invention as described above will be described in detail with reference to the accompanying drawings.
본 고안은 전해콘덴서(1)를 절연체(2)가 있는 콘덴서플레이트(3)의 설치구멍(4)에 횡열로 높혀 설치하고, 트랜지스터모듈(5, 5')이 장착된 팬(6) 달린 방열판(7)을 모듈플레이트(8) 전방에 설치하며, 상기 트랜지스터모듈(5, 5')을 상호연결하는 부스바(16)에 스너버(9)를 장착하고, 상기 콘덴서플레이트(3)와 모듈플레이트(8)를 밀접시켜 상기 전해콘덴서(1)를 병렬 연결하는 양극부스바(11)와 트랜지스터모듈(5, 5')를 연결하는 부스바(16)를 모듈플레이트(8)상의 절개공(21)을 통하여 부스바 또는 케이블(10)을 단거리 접속한 것이다.According to the present invention, the electrolytic capacitor 1 is mounted in a row in an installation hole 4 of the capacitor plate 3 with the insulator 2, and a heat sink with a fan 6 having the transistor modules 5 and 5 'mounted thereon. (7) is installed in front of the module plate (8), the snubber (9) is mounted on the busbar (16) interconnecting the transistor modules (5, 5 '), and the capacitor plate (3) and the module An anode bus bar 11 for connecting the electrolytic capacitor 1 in parallel with the plate 8 and a bus bar 16 for connecting the transistor modules 5 and 5 'are cut out on the module plate 8. The bus bar or the cable 10 is short-ranged through 21).
상기한 전해콘덴서(1)는 콘덴서플레이트(3)에 상하로 여러열배치가 가능한 것으로, 각 전해콘덴서(1)는 양극부스바(11)와 음극부스바(12)가 설치된다.The electrolytic capacitor 1 can be arranged in a row up and down on the capacitor plate 3, and each electrolytic capacitor 1 is provided with a positive electrode booth bar 11 and a negative electrode booth bar 12.
절연체(2)는 고무질로서 콘덴서플레이트(3)에 걸쳐 끼워지는 각 전해콘덴서(1)를 안정되게 지지하며 전해콘덴서(1)을 플레이트(3)으로 부터 절연시키며 상기 콘덴서플레이트(3) 후방에는 후면플레이트(13)가 받쳐주게 된다.The insulator (2) is made of rubber and stably supports each electrolytic capacitor (1) inserted over the capacitor plate (3), insulates the electrolytic capacitor (1) from the plate (3), and the rear of the capacitor plate (3). The plate 13 is supported.
방열판(7)은 전면의 트랜지스터모듈(5, 5')에서 발생되는 열을 충분히 방열할 수 있도록 하기 위해 날개를 좌우축과 후방에 얇고 길게 형성시킨 것으로 선택되고, 날개가 있는 외면에는 바람막이(14)가 끼워지며 상면에는 디스크형의 팬(6)이 설치되고, 모듈플레이트(8)와는 모서리에 형성된 홈에 사각너트(15)를 끼워 고정하게 된다.The heat sink 7 is selected to form a thin and long blade on the left and right axis and the rear to sufficiently dissipate heat generated from the transistor modules 5 and 5 'on the front surface, and the windshield 14 ) And the disk-shaped fan (6) is installed on the upper surface, and the square nut (15) is fixed to the groove formed in the corner with the module plate (8).
스너버(9)는 스너버회로(S)를 이루는 객체로서 상하에 플렌지가 형성된 모듈부스바(16)상에 저항브라켓(17)에 의하여 지지되는 무유도 저항(18)과 다이오드(19) 및 스너버콘덴서(20)로 구성되는바 이 스너버(9)는 트랜지스터모듈(5, 5')를 연결하는 모듈 부스바(16)위에 장착되고 이 부스바(16)와 양극부스바(11)간에는 부스바 또는 케이블(10)이 접속된다.The snubber 9 is an object constituting the snubber circuit S and an inductive resistor 18 and a diode 19 supported by a resistance bracket 17 on a module bus bar 16 having a flange formed on top and bottom thereof. The snubber 9, which is composed of a snubber capacitor 20, is mounted on a module bus bar 16 connecting the transistor modules 5 and 5 ', and the bus bar 16 and the anode bus bar 11 are formed. The busbar or the cable 10 is connected to the inside.
모듈플레이트(8)상에는 상기 부스바 또는 케이블(10)이 통과할수 있는 절개공(21)이 형성된다.On the module plate 8 is formed a cutting hole 21 through which the busbar or cable 10 can pass.
제3도는 다른 스너버(9')를 나타낸 것으로서 제1도의 스너버(9)와 달리 모듈부스바(16')가 중앙에 중방향으로 플렌지가 형성되고 그 중앙에 부스바(10)가 접속되는 것이다.FIG. 3 shows another snubber 9 '. Unlike the snubber 9 of FIG. 1, the module booth bar 16' has a flange formed in the middle in the center thereof and the busbar 10 is connected to the center thereof. Will be.
미설명부호(22)는 트랜지스터모듈에 흐르는 전류크기를 감지하기 위한 전류측정기이다.Reference numeral 22 is a current meter for sensing the amount of current flowing through the transistor module.
이와같은 본 고안은 운전제어신호에 의하여 작동개시되면 전해 콘덴서(1)와 트랜지스터모듈(5, 5')에서 열이 발생되는바 비교적 소량발생되는 전해콘덴서(1)의 열은 콘덴서플레이트(3)에서 주어지는 전해콘덴서(1)간의 대류공간(23)에서 대류되면서 방열되고 대량의 열이 방출되는 트랜지스터모듈(5, 5')의 열은 방열관(7)에 전도되면서 팬(6)에 의하여 외부로 배출되어진다.This invention devises heat generated in the electrolytic capacitor 1 and the transistor modules 5 and 5 'when the operation is started by the operation control signal, so that the heat of the electrolytic capacitor 1, which is relatively small, is generated from the capacitor plate 3. Convection in the convection space 23 between the electrolytic capacitors 1 given by the heat from the transistor module (5, 5 ') that is radiated and a large amount of heat is released to the heat dissipation tube (7) while the outside by the fan (6) Is discharged.
본 고안에서 부스바 또는 케이블(10)은, 양극부스바(11)가 모듈플레이트(8)에 밀접되어 있기 때문에 실제적으로 그 길이가 방열판(7)과 트랜지스터모듈(5, 5')의 폭을 합친 정도에 불과하고, 이로써 전해콘덴서(1)와 트랜지스터모듈(5, 5')간에 주어지는 배선인덕턴스를 극소화하게 되고, 나아가 배선인덕턴스에서 발생되는 써지전압Vp를 최소화할수 있게 되는 것이다.In the present invention, the bus bar or the cable 10 has the width of the heat sink 7 and the transistor modules 5, 5 ′ because the length of the anode boot bar 11 is close to the module plate 8. It is only a combined degree, thereby minimizing the wiring inductance given between the electrolytic capacitor 1 and the transistor modules 5 and 5 ', and further minimizing the surge voltage Vp generated in the wiring inductance.
상기에서는 주로트랜지스터모듈을 사용한 인버어터 회로에 관하여 설명하였으나 전류회로(轉流回路)를 가진 SCR식 전력 변환회로나 GTD식 전력변환회로에도 본 고안을 이용하면 배선인덕턴스에 의한 써지전압을 줄일수 있다.In the above, the inverter circuit mainly using the transistor module has been described. However, the present invention can also be used to reduce the surge voltage due to the wiring inductance in the SCR type power conversion circuit or the GTD type power conversion circuit having the current circuit. .
또, 본 고안은 각 부분의 설치에 있어 용량 및 용도에 따른 규격설치가 가능하고 트랜지스터모듈(5, 5')등의 교체보수나 전반적인 조립이 손쉽도록 각 부분이 분할되어 있는 장점이 있는 것이다.In addition, the present invention has the advantage that can be installed in the standard according to the capacity and use in the installation of each part, each part is divided so that the replacement and repair or overall assembly of the transistor module (5, 5 ') and the like is easy.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019900013420U KR920006431Y1 (en) | 1990-08-31 | 1990-08-31 | Architecture of lessoning inductance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR2019900013420U KR920006431Y1 (en) | 1990-08-31 | 1990-08-31 | Architecture of lessoning inductance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR920005411U KR920005411U (en) | 1992-03-26 |
| KR920006431Y1 true KR920006431Y1 (en) | 1992-09-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR2019900013420U Expired KR920006431Y1 (en) | 1990-08-31 | 1990-08-31 | Architecture of lessoning inductance |
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| KR (1) | KR920006431Y1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2014110721A (en) * | 2012-12-04 | 2014-06-12 | Samsung Electronics Co Ltd | Power conversion device |
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1990
- 1990-08-31 KR KR2019900013420U patent/KR920006431Y1/en not_active Expired
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| KR920005411U (en) | 1992-03-26 |
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