KR910001906A - Plasma processing device and method - Google Patents

Plasma processing device and method

Info

Publication number: KR910001906A
Authority: KR; South Korea
Prior art keywords: processing device; plasma processing; plasma; processing
Prior art date: 1989-06-16
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

KR1019900008816A

Other languages

Korean (ko)

Other versions

KR930008497B1 (en

Inventor

미쯔오 도꾸다

쥰조 아즈마

도루 오쯔보

야스히로 야마구찌

이찌로 사사끼

Original Assignee

가부시끼가이샤 히다찌세이샤꾸쇼

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1989-06-16

Filing date

1990-06-15

Publication date

1991-01-31

1989-06-16 Priority claimed from JP1152311A external-priority patent/JP2760845B2/en

1990-06-15 Application filed by 가부시끼가이샤 히다찌세이샤꾸쇼 filed Critical 가부시끼가이샤 히다찌세이샤꾸쇼

1991-01-31 Publication of KR910001906A publication Critical patent/KR910001906A/en

1993-09-07 Application granted granted Critical

1993-09-07 Publication of KR930008497B1 publication Critical patent/KR930008497B1/en

2010-06-15 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H10P50/00—
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/511—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using microwave discharges
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32247—Resonators
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Plasma & Fusion (AREA)
Physics & Mathematics (AREA)
Chemical Kinetics & Catalysis (AREA)
Materials Engineering (AREA)
Mechanical Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
General Chemical & Material Sciences (AREA)
Analytical Chemistry (AREA)
Chemical Vapour Deposition (AREA)
Plasma Technology (AREA)

KR1019900008816A 1989-06-16 1990-06-15 Plasma treatment apparatus and method Expired - Fee Related KR930008497B1 (en)

Applications Claiming Priority (4)

Application Number	Priority Date	Filing Date	Title
JP89-152311		1989-06-16
JP1152311A JP2760845B2 (en)	1988-07-08	1989-06-16	Plasma processing apparatus and method
JP89-167089		1989-06-30
JP16708989		1989-06-30

Publications (2)

Publication Number	Publication Date
KR910001906A true KR910001906A (en)	1991-01-31
KR930008497B1 KR930008497B1 (en)	1993-09-07

Family

ID=15843215

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
KR1019900008816A Expired - Fee Related KR930008497B1 (en)	1989-06-16	1990-06-15	Plasma treatment apparatus and method

Country Status (2)

Country	Link
JP (1)	JP3053105B2 (en)
KR (1)	KR930008497B1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5645644A (en) *	1995-10-20	1997-07-08	Sumitomo Metal Industries, Ltd.	Plasma processing apparatus
JP4654176B2 (en) *	1996-02-22	2011-03-16	住友精密工業株式会社	Inductively coupled plasma reactor
JP3567736B2 (en) *	1998-05-25	2004-09-22	株式会社日立製作所	Plasma processing equipment
JP3792089B2 (en) *	2000-01-14	2006-06-28	シャープ株式会社	Plasma process equipment
JP4222707B2 (en) *	2000-03-24	2009-02-12	東京エレクトロン株式会社	Plasma processing apparatus and method, gas supply ring and dielectric
JP5068458B2 (en) *	2006-01-18	2012-11-07	東京エレクトロン株式会社	Plasma processing apparatus and plasma processing method
JP4677918B2 (en) *	2006-02-09	2011-04-27	東京エレクトロン株式会社	Plasma processing apparatus and plasma processing method
US8809203B2 (en) *	2007-06-05	2014-08-19	Semiconductor Energy Laboratory Co., Ltd.	Method for manufacturing semiconductor device using a microwave plasma CVD apparatus
KR101910678B1 (en) *	2010-11-17	2018-10-22	도쿄엘렉트론가부시키가이샤	Apparatus for plasma treatment and method for plasma treatment
JP7184254B2 (en) *	2018-12-06	2022-12-06	東京エレクトロン株式会社	Plasma processing apparatus and plasma processing method

1990
- 1990-05-18 JP JP02126689A patent/JP3053105B2/en not_active Expired - Fee Related
- 1990-06-15 KR KR1019900008816A patent/KR930008497B1/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
JP3053105B2 (en)	2000-06-19
KR930008497B1 (en)	1993-09-07
JPH0394422A (en)	1991-04-19

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DE69421872D1 (en)	2000-01-05	Plasma generation method and device and plasma processing method and device
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Legal Events

Date	Code	Title	Description
1990-06-15	A201	Request for examination
1990-06-15	PA0109	Patent application	St.27 status event code: A-0-1-A10-A12-nap-PA0109
1990-06-15	PA0201	Request for examination	St.27 status event code: A-1-2-D10-D11-exm-PA0201
1990-06-15	R17-X000	Change to representative recorded	St.27 status event code: A-3-3-R10-R17-oth-X000
1991-01-31	PG1501	Laying open of application	St.27 status event code: A-1-1-Q10-Q12-nap-PG1501
1993-04-16	E902	Notification of reason for refusal
1993-04-16	PE0902	Notice of grounds for rejection	St.27 status event code: A-1-2-D10-D21-exm-PE0902
1993-06-09	P11-X000	Amendment of application requested	St.27 status event code: A-2-2-P10-P11-nap-X000
1993-06-09	P13-X000	Application amended	St.27 status event code: A-2-2-P10-P13-nap-X000
1993-08-13	G160	Decision to publish patent application
1993-09-07	PG1605	Publication of application before grant of patent	St.27 status event code: A-2-2-Q10-Q13-nap-PG1605
1993-11-19	E701	Decision to grant or registration of patent right
1993-11-19	PE0701	Decision of registration	St.27 status event code: A-1-2-D10-D22-exm-PE0701
1993-12-22	GRNT	Written decision to grant
1993-12-22	PR0701	Registration of establishment	St.27 status event code: A-2-4-F10-F11-exm-PR0701
1993-12-22	PR1002	Payment of registration fee	St.27 status event code: A-2-2-U10-U11-oth-PR1002 Fee payment year number: 1
1996-07-11	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 4
1997-07-14	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 5
1997-12-27	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 6
1999-01-13	R18-X000	Changes to party contact information recorded	St.27 status event code: A-5-5-R10-R18-oth-X000
1999-03-05	PN2301	Change of applicant	St.27 status event code: A-5-5-R10-R13-asn-PN2301 St.27 status event code: A-5-5-R10-R11-asn-PN2301
2001-07-19	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 9
2002-08-07	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 10
2003-09-01	FPAY	Annual fee payment	Payment date: 20030902 Year of fee payment: 11
2003-09-02	PR1001	Payment of annual fee	St.27 status event code: A-4-4-U10-U11-oth-PR1001 Fee payment year number: 11
2004-09-08	LAPS	Lapse due to unpaid annual fee
2004-09-08	PC1903	Unpaid annual fee	St.27 status event code: A-4-4-U10-U13-oth-PC1903 Not in force date: 20040908 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE
2004-10-27	R18-X000	Changes to party contact information recorded	St.27 status event code: A-5-5-R10-R18-oth-X000
2005-06-10	PC1903	Unpaid annual fee	St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20040908
2018-09-19	P22-X000	Classification modified	St.27 status event code: A-4-4-P10-P22-nap-X000
2026-01-06	P22-X000	Classification modified	St.27 status event code: A-4-4-P10-P22-nap-X000